KR100779885B1 - 복사 가열된 세라믹 라이너를 갖는 반도체 처리 장치 - Google Patents

복사 가열된 세라믹 라이너를 갖는 반도체 처리 장치 Download PDF

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Publication number
KR100779885B1
KR100779885B1 KR1020027003801A KR20027003801A KR100779885B1 KR 100779885 B1 KR100779885 B1 KR 100779885B1 KR 1020027003801 A KR1020027003801 A KR 1020027003801A KR 20027003801 A KR20027003801 A KR 20027003801A KR 100779885 B1 KR100779885 B1 KR 100779885B1
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KR
South Korea
Prior art keywords
liner
substrate
plasma
chamber
ceramic liner
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020027003801A
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English (en)
Korean (ko)
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KR20020047183A (ko
Inventor
케네디윌리엄에스.
마라쉰로버트에이.
위커토마스이.
Original Assignee
램 리써치 코포레이션
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Publication of KR20020047183A publication Critical patent/KR20020047183A/ko
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Publication of KR100779885B1 publication Critical patent/KR100779885B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020027003801A 1999-09-23 2000-09-11 복사 가열된 세라믹 라이너를 갖는 반도체 처리 장치 Expired - Fee Related KR100779885B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/401,308 1999-09-23
US09/401,308 US6227140B1 (en) 1999-09-23 1999-09-23 Semiconductor processing equipment having radiant heated ceramic liner

Publications (2)

Publication Number Publication Date
KR20020047183A KR20020047183A (ko) 2002-06-21
KR100779885B1 true KR100779885B1 (ko) 2007-11-28

Family

ID=23587202

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027003801A Expired - Fee Related KR100779885B1 (ko) 1999-09-23 2000-09-11 복사 가열된 세라믹 라이너를 갖는 반도체 처리 장치

Country Status (8)

Country Link
US (1) US6227140B1 (https=)
EP (1) EP1214732B1 (https=)
JP (1) JP4837860B2 (https=)
KR (1) KR100779885B1 (https=)
AU (1) AU7368300A (https=)
DE (1) DE60035056T2 (https=)
TW (1) TW492101B (https=)
WO (1) WO2001022478A1 (https=)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2010068624A3 (en) * 2008-12-12 2010-08-26 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US8133362B2 (en) 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
KR101184780B1 (ko) 2010-12-20 2012-09-20 한국항공우주연구원 적층 방식을 이용한 방빙형 피토 정압 프로브 제작방법
US9181619B2 (en) 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser

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US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6514378B1 (en) * 2000-03-31 2003-02-04 Lam Research Corporation Method for improving uniformity and reducing etch rate variation of etching polysilicon
JP2004507074A (ja) * 2000-04-06 2004-03-04 エーエスエム　アメリカ　インコーポレイテッド ガラス質材料用バリアコーティング
US6726955B1 (en) * 2000-06-27 2004-04-27 Applied Materials, Inc. Method of controlling the crystal structure of polycrystalline silicon
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US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
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US6825051B2 (en) * 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
KR100540992B1 (ko) * 2002-11-18 2006-01-11 코리아세미텍 주식회사 웨이퍼 에칭용 전극제조방법
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US20050022736A1 (en) * 2003-07-29 2005-02-03 Lam Research Inc., A Delaware Corporation Method for balancing return currents in plasma processing apparatus
US6974781B2 (en) * 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
KR100669008B1 (ko) * 2004-12-03 2007-01-16 삼성전자주식회사 플라즈마 반응기
KR100654005B1 (ko) * 2005-06-14 2006-12-05 노기래 디퓨저 익스텐션 프레임 조립체 및 그 제조방법
US7713379B2 (en) * 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
CN100358099C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 等离子体处理装置
US8366829B2 (en) * 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
CN100369192C (zh) * 2005-12-26 2008-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 半导体加工系统反应腔室
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CN101165868B (zh) * 2006-10-20 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 晶片处理室的内衬及包含该内衬的晶片处理室
US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US20080196450A1 (en) * 2007-02-21 2008-08-21 Nippon Telegraph And Telephone Corporation Coated optical fiber endface preparation method and tool
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US20090052498A1 (en) * 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
US8418649B2 (en) 2007-12-19 2013-04-16 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5567494B2 (ja) 2007-12-19 2014-08-06 ラム リサーチ コーポレーション 半導体真空処理装置用のコンポーネント・アセンブリ、アセンブリを結合する方法、及び、半導体基板を処理する方法
US7993057B2 (en) * 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
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US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8066857B2 (en) 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US8100583B2 (en) * 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
JP5481224B2 (ja) * 2010-02-19 2014-04-23 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
DE102010030563A1 (de) * 2010-06-25 2011-12-29 Von Ardenne Anlagentechnik Gmbh Substratbehandlungsanlage
JP5977986B2 (ja) * 2011-11-08 2016-08-24 株式会社日立ハイテクノロジーズ 熱処理装置
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
CN103151235B (zh) * 2013-02-20 2016-01-27 上海华力微电子有限公司 一种提高刻蚀均匀性的装置
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WO2017165016A1 (en) * 2016-03-25 2017-09-28 Applied Materials, Inc. Chamber liner for high temperature processing
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CN108022852B (zh) 2016-11-01 2020-08-07 中微半导体设备(上海)股份有限公司 Icp刻蚀机台及其绝缘窗口薄膜加热器装置和温度控制方法
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Cited By (6)

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Publication number Priority date Publication date Assignee Title
WO2010068624A3 (en) * 2008-12-12 2010-08-26 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US8043487B2 (en) 2008-12-12 2011-10-25 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
KR101271560B1 (ko) * 2008-12-12 2013-06-11 후지필름 가부시키가이샤 진공 물리적 기상 증착을 위한 챔버 실드
US8133362B2 (en) 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
US9181619B2 (en) 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
KR101184780B1 (ko) 2010-12-20 2012-09-20 한국항공우주연구원 적층 방식을 이용한 방빙형 피토 정압 프로브 제작방법

Also Published As

Publication number Publication date
JP2003520418A (ja) 2003-07-02
DE60035056D1 (de) 2007-07-12
WO2001022478A9 (en) 2002-11-28
KR20020047183A (ko) 2002-06-21
DE60035056T2 (de) 2008-01-31
TW492101B (en) 2002-06-21
WO2001022478A1 (en) 2001-03-29
EP1214732A1 (en) 2002-06-19
JP4837860B2 (ja) 2011-12-14
AU7368300A (en) 2001-04-24
US6227140B1 (en) 2001-05-08
EP1214732B1 (en) 2007-05-30

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