JP2003519920A5 - - Google Patents
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- Publication number
- JP2003519920A5 JP2003519920A5 JP2001550800A JP2001550800A JP2003519920A5 JP 2003519920 A5 JP2003519920 A5 JP 2003519920A5 JP 2001550800 A JP2001550800 A JP 2001550800A JP 2001550800 A JP2001550800 A JP 2001550800A JP 2003519920 A5 JP2003519920 A5 JP 2003519920A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/476,875 | 2000-01-04 | ||
| US09/476,875 US6485990B1 (en) | 2000-01-04 | 2000-01-04 | Feed-forward control of an etch processing tool |
| PCT/US2000/024423 WO2001050520A1 (en) | 2000-01-04 | 2000-09-06 | In-situ contril of a dry etcher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003519920A JP2003519920A (ja) | 2003-06-24 |
| JP2003519920A5 true JP2003519920A5 (da) | 2007-10-25 |
Family
ID=23893611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001550800A Pending JP2003519920A (ja) | 2000-01-04 | 2000-09-06 | ドライエッチャーの現場制御 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6485990B1 (da) |
| EP (1) | EP1245040A1 (da) |
| JP (1) | JP2003519920A (da) |
| KR (1) | KR100768580B1 (da) |
| WO (1) | WO2001050520A1 (da) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001338855A (ja) * | 2000-05-30 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 先行ウェハ決定方法、測定ウェハ決定方法及びウェハ数調整方法 |
| JP3708031B2 (ja) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| US6708075B2 (en) * | 2001-11-16 | 2004-03-16 | Advanced Micro Devices | Method and apparatus for utilizing integrated metrology data as feed-forward data |
| KR100939329B1 (ko) * | 2002-01-10 | 2010-01-28 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 에이전트 기반 제어 아키텍쳐 |
| US6908807B2 (en) * | 2002-03-26 | 2005-06-21 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
| US6853873B1 (en) * | 2003-02-21 | 2005-02-08 | Nanometrics Incorporated | Enhanced throughput of a metrology tool |
| JP4880888B2 (ja) * | 2003-09-09 | 2012-02-22 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| JP4880889B2 (ja) * | 2003-09-09 | 2012-02-22 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| JP4880890B2 (ja) * | 2003-09-09 | 2012-02-22 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| JP4732726B2 (ja) * | 2003-09-09 | 2011-07-27 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| TWI229387B (en) * | 2004-03-11 | 2005-03-11 | Au Optronics Corp | Laser annealing apparatus and laser annealing process |
| US6980873B2 (en) | 2004-04-23 | 2005-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for real-time fault detection, classification, and correction in a semiconductor manufacturing environment |
| US7437404B2 (en) | 2004-05-20 | 2008-10-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for improving equipment communication in semiconductor manufacturing equipment |
| US7127375B2 (en) * | 2004-10-12 | 2006-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Non-uniformity pattern identification systems and methods thereof |
| US7846305B2 (en) * | 2005-03-01 | 2010-12-07 | Hitachi Global Storage Technologies, Netherlands, B.V. | Method and apparatus for increasing uniformity in ion mill process |
| US9299614B2 (en) * | 2013-12-10 | 2016-03-29 | Applied Materials, Inc. | Method and carrier for dicing a wafer |
| KR101975795B1 (ko) * | 2017-12-20 | 2019-05-07 | 주식회사 한화 | 반구형 공진기 발란싱 장치 및 방법 |
| US10692759B2 (en) * | 2018-07-17 | 2020-06-23 | Applied Materials, Inc. | Methods for manufacturing an interconnect structure for semiconductor devices |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4528438A (en) * | 1976-09-16 | 1985-07-09 | Northern Telecom Limited | End point control in plasma etching |
| JPS56125841A (en) | 1980-03-07 | 1981-10-02 | Fujitsu Ltd | Plasma-etching method |
| JPS5929427A (ja) * | 1982-08-12 | 1984-02-16 | Nec Corp | 半導体装置の生産装置システム |
| JPS61214430A (ja) * | 1985-03-19 | 1986-09-24 | Nippon Gakki Seizo Kk | 半導体装置の製法 |
| JPH01239929A (ja) * | 1988-03-22 | 1989-09-25 | Sharp Corp | ドライエッチング装置 |
| JPH02310921A (ja) | 1989-05-26 | 1990-12-26 | Hitachi Ltd | 半導体装置の製造方法 |
| US5308447A (en) * | 1992-06-09 | 1994-05-03 | Luxtron Corporation | Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer |
| US5565114A (en) | 1993-03-04 | 1996-10-15 | Tokyo Electron Limited | Method and device for detecting the end point of plasma process |
| US5399229A (en) | 1993-05-13 | 1995-03-21 | Texas Instruments Incorporated | System and method for monitoring and evaluating semiconductor wafer fabrication |
| DE59405680D1 (de) * | 1993-06-23 | 1998-05-20 | Siemens Ag | Verfahren zur Herstellung eines Isolationsgrabens in einem Substrat für Smart-Power-Technologien |
| US5405488A (en) | 1993-09-13 | 1995-04-11 | Vlsi Technology, Inc. | System and method for plasma etching endpoint detection |
| US5788869A (en) | 1995-11-02 | 1998-08-04 | Digital Equipment Corporation | Methodology for in situ etch stop detection and control of plasma etching process and device design to minimize process chamber contamination |
| JP3630931B2 (ja) * | 1996-08-29 | 2005-03-23 | 富士通株式会社 | プラズマ処理装置、プロセスモニタ方法及び半導体装置の製造方法 |
| US6197116B1 (en) * | 1996-08-29 | 2001-03-06 | Fujitsu Limited | Plasma processing system |
| US5871658A (en) | 1997-01-13 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers |
| JP4041579B2 (ja) * | 1998-04-01 | 2008-01-30 | 株式会社ルネサステクノロジ | プラズマ処理の終点検出方法及びそれを用いた半導体デバイスの製造方法 |
| JPH11354482A (ja) * | 1998-06-09 | 1999-12-24 | Sony Corp | 洗浄装置及び洗浄方法、並びにエッチング装置及びエッチング方法 |
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2000
- 2000-01-04 US US09/476,875 patent/US6485990B1/en not_active Expired - Lifetime
- 2000-09-06 KR KR1020027008711A patent/KR100768580B1/ko not_active IP Right Cessation
- 2000-09-06 JP JP2001550800A patent/JP2003519920A/ja active Pending
- 2000-09-06 WO PCT/US2000/024423 patent/WO2001050520A1/en active Application Filing
- 2000-09-06 EP EP00959933A patent/EP1245040A1/en not_active Withdrawn