JP2003517719A5 - - Google Patents

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Publication number
JP2003517719A5
JP2003517719A5 JP2000582864A JP2000582864A JP2003517719A5 JP 2003517719 A5 JP2003517719 A5 JP 2003517719A5 JP 2000582864 A JP2000582864 A JP 2000582864A JP 2000582864 A JP2000582864 A JP 2000582864A JP 2003517719 A5 JP2003517719 A5 JP 2003517719A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000582864A
Other languages
Japanese (ja)
Other versions
JP2003517719A (ja
JP4394835B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US1998/024766 external-priority patent/WO2000029919A1/en
Publication of JP2003517719A publication Critical patent/JP2003517719A/ja
Publication of JP2003517719A5 publication Critical patent/JP2003517719A5/ja
Application granted granted Critical
Publication of JP4394835B2 publication Critical patent/JP4394835B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000582864A 1998-11-18 1998-11-18 低パワー集積回路用高速オンチップ電圧発生器 Expired - Lifetime JP4394835B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/024766 WO2000029919A1 (en) 1998-11-18 1998-11-18 Rapid on chip voltage generation for low power integrated circuits

Publications (3)

Publication Number Publication Date
JP2003517719A JP2003517719A (ja) 2003-05-27
JP2003517719A5 true JP2003517719A5 (no) 2006-02-16
JP4394835B2 JP4394835B2 (ja) 2010-01-06

Family

ID=22268334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000582864A Expired - Lifetime JP4394835B2 (ja) 1998-11-18 1998-11-18 低パワー集積回路用高速オンチップ電圧発生器

Country Status (6)

Country Link
EP (1) EP1151365B1 (no)
JP (1) JP4394835B2 (no)
CN (1) CN1148621C (no)
DE (1) DE69823888T2 (no)
HK (1) HK1042954A1 (no)
WO (1) WO2000029919A1 (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646950B2 (en) * 2001-04-30 2003-11-11 Fujitsu Limited High speed decoder for flash memory
WO2004109711A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 冗長メモリのブースタ回路を有する半導体メモリ
CN1323434C (zh) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 整合闪存与高电压组件的制造方法
US7466620B2 (en) * 2006-01-04 2008-12-16 Baker Mohammad System and method for low power wordline logic for a memory
US7529117B2 (en) * 2007-03-07 2009-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Design solutions for integrated circuits with triple gate oxides
CN101620886B (zh) * 2008-07-02 2012-01-25 中芯国际集成电路制造(上海)有限公司 用于闪存器件的字线增压器
JP5808937B2 (ja) * 2011-04-20 2015-11-10 ラピスセミコンダクタ株式会社 半導体メモリの内部電源電圧生成回路及び内部電源電圧生成方法
CN108958639B (zh) * 2017-05-19 2021-07-06 华邦电子股份有限公司 快闪存储器存储装置
JP2021149999A (ja) 2020-03-23 2021-09-27 キオクシア株式会社 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910004737B1 (ko) * 1988-12-19 1991-07-10 삼성전자 주식회사 백바이어스전압 발생회로
KR0172337B1 (ko) * 1995-11-13 1999-03-30 김광호 반도체 메모리장치의 내부승압전원 발생회로
US5708387A (en) * 1995-11-17 1998-01-13 Advanced Micro Devices, Inc. Fast 3-state booster-circuit
JPH09320267A (ja) * 1996-05-28 1997-12-12 Oki Micro Design Miyazaki:Kk 昇圧回路の駆動方法および昇圧回路

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