JP2003512519A5 - - Google Patents

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Publication number
JP2003512519A5
JP2003512519A5 JP2001531122A JP2001531122A JP2003512519A5 JP 2003512519 A5 JP2003512519 A5 JP 2003512519A5 JP 2001531122 A JP2001531122 A JP 2001531122A JP 2001531122 A JP2001531122 A JP 2001531122A JP 2003512519 A5 JP2003512519 A5 JP 2003512519A5
Authority
JP
Japan
Prior art keywords
process layer
autonomously
control variable
wafer
measured thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001531122A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003512519A (ja
Filing date
Publication date
Priority claimed from US09/421,803 external-priority patent/US6706541B1/en
Application filed filed Critical
Publication of JP2003512519A publication Critical patent/JP2003512519A/ja
Publication of JP2003512519A5 publication Critical patent/JP2003512519A5/ja
Pending legal-status Critical Current

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JP2001531122A 1999-10-20 2000-04-18 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置 Pending JP2003512519A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/421,803 1999-10-20
US09/421,803 US6706541B1 (en) 1999-10-20 1999-10-20 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
PCT/US2000/010364 WO2001029873A1 (fr) 1999-10-20 2000-04-18 Procede et appareil de controle de l'uniformite d'une tranche au moyen de capteurs a resolution spatiale

Publications (2)

Publication Number Publication Date
JP2003512519A JP2003512519A (ja) 2003-04-02
JP2003512519A5 true JP2003512519A5 (fr) 2007-04-19

Family

ID=23672101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001531122A Pending JP2003512519A (ja) 1999-10-20 2000-04-18 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置

Country Status (6)

Country Link
US (1) US6706541B1 (fr)
EP (1) EP1222679B1 (fr)
JP (1) JP2003512519A (fr)
KR (1) KR100687823B1 (fr)
DE (1) DE60033166T2 (fr)
WO (1) WO2001029873A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7116753B2 (ja) 2013-12-22 2022-08-10 アプライド マテリアルズ インコーポレイテッド 堆積用監視システム及びその操作方法

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US7067440B1 (en) 2001-08-24 2006-06-27 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
US7402257B1 (en) * 2002-07-30 2008-07-22 Advanced Micro Devices, Inc. Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same
US6922603B1 (en) * 2002-09-26 2005-07-26 Lam Research Corporation System and method for quantifying uniformity patterns for tool development and monitoring
US7122485B1 (en) 2002-12-09 2006-10-17 Novellus Systems, Inc. Deposition profile modification through process chemistry
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US7163896B1 (en) * 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7476621B1 (en) * 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7018855B2 (en) * 2003-12-24 2006-03-28 Lam Research Corporation Process controls for improved wafer uniformity using integrated or standalone metrology
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
WO2005123335A1 (fr) * 2004-06-21 2005-12-29 Ebara Corporation Appareil et procédé de polissage
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7176039B1 (en) 2004-09-21 2007-02-13 Novellus Systems, Inc. Dynamic modification of gap fill process characteristics
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
CN101511539B (zh) * 2006-09-12 2012-08-22 株式会社荏原制作所 研磨装置及研磨方法
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
EP2331294A1 (fr) * 2008-10-01 2011-06-15 Peter Wolters GmbH Procédé de mesure de l'épaisseur d'une pièce à usiner en forme de disque
US8537020B2 (en) * 2008-12-23 2013-09-17 Honeywell International Inc. Visual indicator of gas sensor impairment
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
DE102012101717A1 (de) 2012-03-01 2013-09-05 Aixtron Se Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
WO2019067323A1 (fr) * 2017-09-26 2019-04-04 Lam Research Corporation Systèmes et procédés de contrôle des doses modulé par impulsions en durée
CN117637554B (zh) * 2024-01-24 2024-05-17 北京北方华创微电子装备有限公司 晶圆刻蚀或沉积及模型获取方法、半导体工艺设备

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JPS60245778A (ja) 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
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US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
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US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US6071811A (en) * 1997-02-26 2000-06-06 Applied Materials, Inc. Deposition of titanium nitride films having improved uniformity
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate
JPH11222673A (ja) 1998-01-30 1999-08-17 Hoya Corp スパッタリング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7116753B2 (ja) 2013-12-22 2022-08-10 アプライド マテリアルズ インコーポレイテッド 堆積用監視システム及びその操作方法

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