JP2003323793A - 閾値電圧レベルのプログラミング方法及びシステムと半導体記憶装置 - Google Patents

閾値電圧レベルのプログラミング方法及びシステムと半導体記憶装置

Info

Publication number
JP2003323793A
JP2003323793A JP2003114392A JP2003114392A JP2003323793A JP 2003323793 A JP2003323793 A JP 2003323793A JP 2003114392 A JP2003114392 A JP 2003114392A JP 2003114392 A JP2003114392 A JP 2003114392A JP 2003323793 A JP2003323793 A JP 2003323793A
Authority
JP
Japan
Prior art keywords
programming
threshold voltage
core cell
strength
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003114392A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003323793A5 (https=
Inventor
Shigekazu Yamada
重和 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27804517&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2003323793(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of JP2003323793A publication Critical patent/JP2003323793A/ja
Publication of JP2003323793A5 publication Critical patent/JP2003323793A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)
JP2003114392A 2002-04-29 2003-04-18 閾値電圧レベルのプログラミング方法及びシステムと半導体記憶装置 Pending JP2003323793A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/136,033 US6621742B1 (en) 2002-04-29 2002-04-29 System for programming a flash memory device
US10/136033 2002-04-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007109895A Division JP2007193942A (ja) 2002-04-29 2007-04-18 半導体記憶装置及びその制御方法

Publications (2)

Publication Number Publication Date
JP2003323793A true JP2003323793A (ja) 2003-11-14
JP2003323793A5 JP2003323793A5 (https=) 2005-03-17

Family

ID=27804517

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2003114392A Pending JP2003323793A (ja) 2002-04-29 2003-04-18 閾値電圧レベルのプログラミング方法及びシステムと半導体記憶装置
JP2007109895A Pending JP2007193942A (ja) 2002-04-29 2007-04-18 半導体記憶装置及びその制御方法
JP2010213936A Pending JP2011040158A (ja) 2002-04-29 2010-09-24 半導体記憶装置及びその制御方法
JP2010213935A Expired - Lifetime JP5285674B2 (ja) 2002-04-29 2010-09-24 半導体記憶装置及びその制御方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2007109895A Pending JP2007193942A (ja) 2002-04-29 2007-04-18 半導体記憶装置及びその制御方法
JP2010213936A Pending JP2011040158A (ja) 2002-04-29 2010-09-24 半導体記憶装置及びその制御方法
JP2010213935A Expired - Lifetime JP5285674B2 (ja) 2002-04-29 2010-09-24 半導体記憶装置及びその制御方法

Country Status (2)

Country Link
US (1) US6621742B1 (https=)
JP (4) JP2003323793A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7239553B2 (en) 2005-01-31 2007-07-03 Spansion Llc Method and apparatus for reference cell adjusting in a storage device
JP2011070768A (ja) * 2011-01-12 2011-04-07 Renesas Electronics Corp 不揮発性半導体記憶装置の書込方法
CN102640218A (zh) * 2009-11-30 2012-08-15 柯尼卡美能达先进多层薄膜株式会社 光拾取装置用的物镜以及光拾取装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
ITMI20062211A1 (it) * 2006-11-17 2008-05-18 St Microelectronics Srl Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili
US7609559B2 (en) * 2007-01-12 2009-10-27 Micron Technology, Inc. Word line drivers having a low pass filter circuit in non-volatile memory device
JP2010211883A (ja) 2009-03-11 2010-09-24 Toshiba Corp 不揮発性半導体記憶装置
JP5316299B2 (ja) * 2009-08-07 2013-10-16 富士通セミコンダクター株式会社 半導体メモリ、システムおよび半導体メモリの動作方法
DE102011009689B4 (de) * 2010-02-25 2012-09-13 Sms Meer Gmbh Strangpresse zum Herstellen von Profilen aus Nichteisenmetall
US8467245B2 (en) 2010-03-24 2013-06-18 Ememory Technology Inc. Non-volatile memory device with program current clamp and related method
US8369154B2 (en) * 2010-03-24 2013-02-05 Ememory Technology Inc. Channel hot electron injection programming method and related device
WO2013112332A1 (en) * 2012-01-24 2013-08-01 Apple Inc. Enhanced programming and erasure schemes for analog memory cells
US11494254B2 (en) 2019-12-20 2022-11-08 Cnex Labs, Inc. Storage system with predictive adjustment mechanism and method of operation thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100223868B1 (ko) * 1996-07-12 1999-10-15 구본준 비휘발성 메모리를 프로그램하는 방법
JPH10188586A (ja) * 1996-12-19 1998-07-21 Sony Corp 半導体不揮発性記憶装置
JPH10228786A (ja) * 1997-02-17 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置及びその閾値制御方法
JP3906545B2 (ja) * 1998-02-03 2007-04-18 ソニー株式会社 不揮発性半導体記憶装置
JP2000030476A (ja) * 1998-07-14 2000-01-28 Mitsubishi Electric Corp 不揮発性半導体記憶装置および閾値電圧書込み方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7239553B2 (en) 2005-01-31 2007-07-03 Spansion Llc Method and apparatus for reference cell adjusting in a storage device
CN102640218A (zh) * 2009-11-30 2012-08-15 柯尼卡美能达先进多层薄膜株式会社 光拾取装置用的物镜以及光拾取装置
JP2011070768A (ja) * 2011-01-12 2011-04-07 Renesas Electronics Corp 不揮発性半導体記憶装置の書込方法

Also Published As

Publication number Publication date
JP5285674B2 (ja) 2013-09-11
JP2011040158A (ja) 2011-02-24
JP2007193942A (ja) 2007-08-02
US6621742B1 (en) 2003-09-16
JP2011018445A (ja) 2011-01-27

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