JP2003303880A - 積層層間絶縁膜構造を利用した配線構造およびその製造方法 - Google Patents
積層層間絶縁膜構造を利用した配線構造およびその製造方法Info
- Publication number
- JP2003303880A JP2003303880A JP2002107862A JP2002107862A JP2003303880A JP 2003303880 A JP2003303880 A JP 2003303880A JP 2002107862 A JP2002107862 A JP 2002107862A JP 2002107862 A JP2002107862 A JP 2002107862A JP 2003303880 A JP2003303880 A JP 2003303880A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- wiring
- dielectric constant
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 abstract description 45
- 239000011810 insulating material Substances 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 445
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 76
- 239000010949 copper Substances 0.000 description 68
- 239000010410 layer Substances 0.000 description 62
- 239000011229 interlayer Substances 0.000 description 54
- 238000005530 etching Methods 0.000 description 38
- 229910052814 silicon oxide Inorganic materials 0.000 description 31
- 238000000034 method Methods 0.000 description 30
- 230000009977 dual effect Effects 0.000 description 29
- 239000000377 silicon dioxide Substances 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000005498 polishing Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000004380 ashing Methods 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 7
- DYZHZLQEGSYGDH-UHFFFAOYSA-N 7-bicyclo[4.2.0]octa-1,3,5-trienyl-[[7,8-bis(ethenyl)-7-bicyclo[4.2.0]octa-1,3,5-trienyl]oxy]silane Chemical compound C1C2=CC=CC=C2C1[SiH2]OC1(C=C)C2=CC=CC=C2C1C=C DYZHZLQEGSYGDH-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910008284 Si—F Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- -1 BCB Polymers 0.000 description 3
- 241000981595 Zoysia japonica Species 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000417 polynaphthalene Polymers 0.000 description 2
- 229920001709 polysilazane Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 101150048609 RR21 gene Proteins 0.000 description 1
- 101150048251 RR23 gene Proteins 0.000 description 1
- 101150116266 RR24 gene Proteins 0.000 description 1
- 101150072233 RR29 gene Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002107862A JP2003303880A (ja) | 2002-04-10 | 2002-04-10 | 積層層間絶縁膜構造を利用した配線構造およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002107862A JP2003303880A (ja) | 2002-04-10 | 2002-04-10 | 積層層間絶縁膜構造を利用した配線構造およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003303880A true JP2003303880A (ja) | 2003-10-24 |
| JP2003303880A5 JP2003303880A5 (enExample) | 2005-09-15 |
Family
ID=29391778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002107862A Pending JP2003303880A (ja) | 2002-04-10 | 2002-04-10 | 積層層間絶縁膜構造を利用した配線構造およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003303880A (enExample) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005159324A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 配線基板、半導体装置、それらの作製方法 |
| JP2005217371A (ja) * | 2004-02-02 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2007049089A (ja) * | 2005-08-12 | 2007-02-22 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2007508698A (ja) * | 2003-10-08 | 2007-04-05 | ラム リサーチ コーポレーション | 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法 |
| JP2007175902A (ja) * | 2005-12-27 | 2007-07-12 | Fuji Xerox Co Ltd | 液滴吐出ヘッド及びその製造方法並びに液滴吐出装置 |
| US7459786B2 (en) | 2004-06-18 | 2008-12-02 | Renesas Technology Corp. | Semiconductor device |
| JP2011065173A (ja) * | 2006-11-27 | 2011-03-31 | Lg Display Co Ltd | フレキシブル表示装置の製造方法 |
| EP1760774A4 (en) * | 2004-05-21 | 2011-08-03 | Jsr Corp | LAMINATED BODY AND SEMICONDUCTOR ELEMENT |
| US8263983B2 (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate and semiconductor device |
| WO2013132749A1 (ja) * | 2012-03-08 | 2013-09-12 | 東京エレクトロン株式会社 | 半導体装置、半導体装置の製造方法、半導体製造装置 |
-
2002
- 2002-04-10 JP JP2002107862A patent/JP2003303880A/ja active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007508698A (ja) * | 2003-10-08 | 2007-04-05 | ラム リサーチ コーポレーション | 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法 |
| US8263983B2 (en) | 2003-10-28 | 2012-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate and semiconductor device |
| JP2005159324A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 配線基板、半導体装置、それらの作製方法 |
| US9237657B2 (en) | 2003-10-28 | 2016-01-12 | Semiconductor Energy Laboratory Co. Ltd. | Wiring substrate, semiconductor device, and method for manufacturing thereof |
| JP2005217371A (ja) * | 2004-02-02 | 2005-08-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| EP1760774A4 (en) * | 2004-05-21 | 2011-08-03 | Jsr Corp | LAMINATED BODY AND SEMICONDUCTOR ELEMENT |
| US7459786B2 (en) | 2004-06-18 | 2008-12-02 | Renesas Technology Corp. | Semiconductor device |
| JP2007049089A (ja) * | 2005-08-12 | 2007-02-22 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP2007175902A (ja) * | 2005-12-27 | 2007-07-12 | Fuji Xerox Co Ltd | 液滴吐出ヘッド及びその製造方法並びに液滴吐出装置 |
| JP2011065173A (ja) * | 2006-11-27 | 2011-03-31 | Lg Display Co Ltd | フレキシブル表示装置の製造方法 |
| US8258694B2 (en) | 2006-11-27 | 2012-09-04 | Lg Display Co., Ltd. | Method for manufacturing flexible display device having an insulative overcoat and flexible display device having the same |
| US8257129B2 (en) | 2006-11-27 | 2012-09-04 | Lg Display Co., Ltd. | Method for manufacturing flexible display device having an insulative overcoat and flexible display device having the same |
| WO2013132749A1 (ja) * | 2012-03-08 | 2013-09-12 | 東京エレクトロン株式会社 | 半導体装置、半導体装置の製造方法、半導体製造装置 |
| JP2013187350A (ja) * | 2012-03-08 | 2013-09-19 | Tokyo Electron Ltd | 半導体装置、半導体装置の製造方法、半導体製造装置 |
| TWI670821B (zh) * | 2012-03-08 | 2019-09-01 | 日商東京威力科創股份有限公司 | 半導體裝置、半導體裝置之製造方法 |
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Legal Events
| Date | Code | Title | Description |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050328 |
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| RD01 | Notification of change of attorney |
Effective date: 20070115 Free format text: JAPANESE INTERMEDIATE CODE: A7421 |
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| A521 | Written amendment |
Effective date: 20070223 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
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