JP2003303880A - 積層層間絶縁膜構造を利用した配線構造およびその製造方法 - Google Patents

積層層間絶縁膜構造を利用した配線構造およびその製造方法

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Publication number
JP2003303880A
JP2003303880A JP2002107862A JP2002107862A JP2003303880A JP 2003303880 A JP2003303880 A JP 2003303880A JP 2002107862 A JP2002107862 A JP 2002107862A JP 2002107862 A JP2002107862 A JP 2002107862A JP 2003303880 A JP2003303880 A JP 2003303880A
Authority
JP
Japan
Prior art keywords
insulating film
film
wiring
dielectric constant
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002107862A
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English (en)
Japanese (ja)
Other versions
JP2003303880A5 (enExample
Inventor
Munehiro Tada
宗弘 多田
Yoshimitsu Harada
恵充 原田
Kenichiro Hijioka
健一郎 肱岡
Hiroto Otake
浩人 大竹
Yoshihiro Hayashi
喜宏 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2002107862A priority Critical patent/JP2003303880A/ja
Publication of JP2003303880A publication Critical patent/JP2003303880A/ja
Publication of JP2003303880A5 publication Critical patent/JP2003303880A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002107862A 2002-04-10 2002-04-10 積層層間絶縁膜構造を利用した配線構造およびその製造方法 Pending JP2003303880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002107862A JP2003303880A (ja) 2002-04-10 2002-04-10 積層層間絶縁膜構造を利用した配線構造およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002107862A JP2003303880A (ja) 2002-04-10 2002-04-10 積層層間絶縁膜構造を利用した配線構造およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003303880A true JP2003303880A (ja) 2003-10-24
JP2003303880A5 JP2003303880A5 (enExample) 2005-09-15

Family

ID=29391778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002107862A Pending JP2003303880A (ja) 2002-04-10 2002-04-10 積層層間絶縁膜構造を利用した配線構造およびその製造方法

Country Status (1)

Country Link
JP (1) JP2003303880A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159324A (ja) * 2003-10-28 2005-06-16 Semiconductor Energy Lab Co Ltd 配線基板、半導体装置、それらの作製方法
JP2005217371A (ja) * 2004-02-02 2005-08-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007049089A (ja) * 2005-08-12 2007-02-22 Nec Electronics Corp 半導体装置およびその製造方法
JP2007508698A (ja) * 2003-10-08 2007-04-05 ラム　リサーチ　コーポレーション 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法
JP2007175902A (ja) * 2005-12-27 2007-07-12 Fuji Xerox Co Ltd 液滴吐出ヘッド及びその製造方法並びに液滴吐出装置
US7459786B2 (en) 2004-06-18 2008-12-02 Renesas Technology Corp. Semiconductor device
JP2011065173A (ja) * 2006-11-27 2011-03-31 Lg Display Co Ltd フレキシブル表示装置の製造方法
EP1760774A4 (en) * 2004-05-21 2011-08-03 Jsr Corp LAMINATED BODY AND SEMICONDUCTOR ELEMENT
US8263983B2 (en) 2003-10-28 2012-09-11 Semiconductor Energy Laboratory Co., Ltd. Wiring substrate and semiconductor device
WO2013132749A1 (ja) * 2012-03-08 2013-09-12 東京エレクトロン株式会社 半導体装置、半導体装置の製造方法、半導体製造装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007508698A (ja) * 2003-10-08 2007-04-05 ラム　リサーチ　コーポレーション 有機ケイ酸塩ガラスについての一酸化二窒素剥脱方法
US8263983B2 (en) 2003-10-28 2012-09-11 Semiconductor Energy Laboratory Co., Ltd. Wiring substrate and semiconductor device
JP2005159324A (ja) * 2003-10-28 2005-06-16 Semiconductor Energy Lab Co Ltd 配線基板、半導体装置、それらの作製方法
US9237657B2 (en) 2003-10-28 2016-01-12 Semiconductor Energy Laboratory Co. Ltd. Wiring substrate, semiconductor device, and method for manufacturing thereof
JP2005217371A (ja) * 2004-02-02 2005-08-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
EP1760774A4 (en) * 2004-05-21 2011-08-03 Jsr Corp LAMINATED BODY AND SEMICONDUCTOR ELEMENT
US7459786B2 (en) 2004-06-18 2008-12-02 Renesas Technology Corp. Semiconductor device
JP2007049089A (ja) * 2005-08-12 2007-02-22 Nec Electronics Corp 半導体装置およびその製造方法
JP2007175902A (ja) * 2005-12-27 2007-07-12 Fuji Xerox Co Ltd 液滴吐出ヘッド及びその製造方法並びに液滴吐出装置
JP2011065173A (ja) * 2006-11-27 2011-03-31 Lg Display Co Ltd フレキシブル表示装置の製造方法
US8258694B2 (en) 2006-11-27 2012-09-04 Lg Display Co., Ltd. Method for manufacturing flexible display device having an insulative overcoat and flexible display device having the same
US8257129B2 (en) 2006-11-27 2012-09-04 Lg Display Co., Ltd. Method for manufacturing flexible display device having an insulative overcoat and flexible display device having the same
WO2013132749A1 (ja) * 2012-03-08 2013-09-12 東京エレクトロン株式会社 半導体装置、半導体装置の製造方法、半導体製造装置
JP2013187350A (ja) * 2012-03-08 2013-09-19 Tokyo Electron Ltd 半導体装置、半導体装置の製造方法、半導体製造装置
TWI670821B (zh) * 2012-03-08 2019-09-01 日商東京威力科創股份有限公司 半導體裝置、半導體裝置之製造方法

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