JP2003297804A - Substrate processing device and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To alleviate the load of chemical-mechanical polishing (CMP), enhance machining efficiency, and improve on substrate surface flatness by replacing the whole or part of substrate processing in CMP with electrochemical machining using pure water or, preferably, ultrapure water. <P>SOLUTION: The substrate processing device has a CMP unit 24 for chemically and mechanically polishing the surface of a substrate; an electrochemical machining unit 26 with a feeder electrode and a tool electrode, wherein an ion exchanger 48 is provided between the substrate and the feeder electrode and/or between the substrate and the tool electrode, with a voltage applied across the two electrodes for the electrochemical machining of the substrate surface in the presence of liquid; and a top ring 74 for holding the substrate removably, capable of freely moving between the CMP unit 24 and the electrochemical machining unit 26. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method, and more particularly to the surface of a conductor (conductive material) such as copper embedded in fine wiring recesses provided on the surface of a substrate such as a semiconductor wafer. The present invention relates to a substrate processing apparatus and method used for planarizing a substrate to form a buried wiring.

[0002]

2. Description of the Related Art In recent years, as a wiring material for forming a circuit on a substrate such as a semiconductor wafer, copper (Cu) having a low electric resistivity and a high electromigration resistance has been used in place of aluminum or an aluminum alloy. It has become noticeable. This kind of copper wiring is generally formed by embedding copper inside the fine recesses provided on the surface of the substrate. As a method of forming this copper wiring, CV
There are methods such as D, sputtering and plating,
In any case, a copper film is formed on almost the entire surface of the substrate, and unnecessary mechanical copper is removed by chemical mechanical polishing (CMP).

FIG. 18 shows a manufacturing example of a copper wiring board W of this type in the order of steps. First, as shown in FIG. 18A, a conductive layer on a semiconductor substrate 1 on which a semiconductor element is formed. 1
An insulating film 2 such as an oxide film made of SiO ₂ or a Low-K material film is deposited on a, and a contact hole 3 and a wiring groove 4 are formed in the insulating film 2 by a lithographic etching technique. A barrier metal (barrier layer) 5 made of TaN or the like is further formed thereon, and a seed layer 7 is further formed thereon as a power feeding layer for electrolytic plating.

Then, as shown in FIG. 18B, by plating the surface of the substrate W with copper, the contact hole 3
Further, the trench 4 is filled with copper, and the copper film 6 is deposited on the insulating film 2. Then, the copper film 6 and the barrier metal 5 on the insulating film 2 are removed by chemical mechanical polishing (CMP), and the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 and the insulating film 2 are removed. Be almost flush with the surface of. As a result, the wiring made of the copper film 6 is formed as shown in FIG.

Recently, as the miniaturization and precision of all the components of equipment have progressed and the manufacturing of materials in the submicron region has become common, the influence of the processing method itself on the characteristics of the material becomes more and more significant. ing. Under such circumstances, a machining method in which a tool physically destroys a work piece and removes it, as in conventional machining, causes many defects in the work piece due to the machining. , The characteristics of the work piece deteriorate. Therefore, how to perform processing without deteriorating the characteristics of the material becomes a problem.

As a special processing method developed as a means for solving this problem, there are chemical polishing, electrolytic processing, and electrolytic polishing.
These processing methods, in contrast to conventional physical processing,
The removal processing and the like are performed by causing a chemical dissolution reaction. Therefore, defects such as a work-affected layer and dislocations due to plastic deformation do not occur, and the problem that the above-described processing is performed without impairing the characteristics of the material can be achieved.

[0007]

As described above, when the removal process of the copper film formed on almost the entire surface of the substrate is performed by chemical mechanical polishing (CMP) alone, this chemical mechanical polishing generally involves polishing. Since the liquid is used, it is not only necessary to thoroughly clean the semiconductor substrate contaminated with the polishing liquid after polishing, but also the cost of the polishing liquid itself and the chemicals used at the time of cleaning, and the environment for these treatments. There are problems such as the load. Therefore, there is a strong demand for reducing the CMP load.

[0008] Incidentally, although a process of shaving by CMP while plating, such as chemical mechanical electropolishing, has been announced, by adding machining to the plating growth surface,
This also promoted abnormal growth of plating, causing a problem in film quality. In the electrolytic processing and electrolytic polishing described above, the work piece and the electrolytic solution (NaCl, NaNO ₃ , HF, HC) are used.
It is said that processing proceeds by electrochemical interaction with (1, HNO ₃ , aqueous solution of NaOH, etc.). Therefore,
As long as an electrolytic solution containing such an electrolyte is used, it is inevitable that the workpiece is contaminated with the electrolytic solution.

As the electrolytic processing, a method using an ion exchanger and pure water, preferably ultrapure water, has been developed. The substrate after plating has minute irregularities on its surface (plating surface), and in this electrolytic processing method, pure water also exists in the concave portion of the substrate surface, and the pure water itself is almost ionized. Therefore, the removal processing of the substrate hardly progresses in the portion of the recess that is in contact with the pure water. Therefore, there is an advantage that the removal processing proceeds only in the portion in contact with the ion exchanger where the ions are abundant, and the planarization performance is superior to the electrolytic processing method using a normal electrolytic solution. However, if an ion exchanger with low elasticity, that is, one that is soft and easy to deform is used, the ion exchanger will follow the irregularities on the substrate surface, and the convex portions of the substrate will be selectively processed to eliminate the step. Will be difficult.

The present invention has been made in view of the above circumstances, and a part or all of the substrate processing step by chemical mechanical polishing (CMP) is electrolytically processed using pure water, preferably ultrapure water. Chemical mechanical polishing (CM
It is an object of the present invention to provide a substrate processing apparatus and method capable of reducing the load of P) and performing processing with high efficiency and high flatness.

[0011]

According to a first aspect of the present invention, there is provided a chemical mechanical polishing section for chemically mechanically polishing a surface of a substrate, a feed electrode and a processing electrode, and the substrate and the processing electrode or the substrate. An ion exchanger is disposed on at least one of the power supply electrodes, a voltage is applied between the power supply electrodes and the processing electrodes, and an electrolytic processing section for electrolytically processing the surface of the substrate in the presence of a liquid is attached / detached to / from the substrate. The substrate processing apparatus is characterized by having a top ring that is freely held and is movable between the chemical mechanical polishing section and the electrolytic processing section.

As a result, the chemical mechanical polishing (CM) in the chemical mechanical polishing section is performed while the substrate is held by the top ring.
Both P) and the electrolytic processing (etching) in the electrolytic processing section can be continuously performed to reduce the load of the chemical mechanical polishing using the polishing liquid. The process of polishing in the chemical mechanical polishing unit and the process of electrolytic processing in the electrolytic processing unit are
It can be performed in any order and any number of times.

According to a second aspect of the present invention, there is provided a chemical mechanical polishing section for chemically and mechanically polishing the surface of the substrate, a feeding electrode and a processing electrode, and a portion between the substrate and the processing electrode or between the substrate and the feeding electrode. At least one of them is pure water or has an electric conductivity of 5
An electrolytic processing unit that supplies a liquid of 00 μS / cm or less and applies a voltage between the power supply electrode and the processing electrode to perform electrolytic processing on the surface of the substrate; A substrate processing apparatus having a top ring movable between a polishing section and the electrolytic processing section.

Pure water is water whose electric conductivity (1 atm, 25 ° C. conversion, the same applies hereinafter) is 10 μS / cm or less, and ultrapure water whose electric conductivity is 0.1 μS / cm or less is used as pure water. It is preferable. Thus, by performing electrolytic processing using pure water, preferably ultrapure water, it is possible to perform clean processing that does not leave impurities on the processed surface, and simplify the cleaning process after electrolytic processing. it can. Here, when pure water, preferably ultrapure water, is used, water molecules in pure water (ultrapure water) are dissociated into OH ⁻ and H ⁺ by a catalytic reaction of an ion exchanger, and, for example, generated OH. ^- it is moved to the working electrode side by the flow of electric and pure water (ultrapure water), in the working electrode vicinity, OH ^- generated by ions passing charge OH
Removal processing or the like can be performed by supplying radicals to the workpiece.

Further, for example, by adding an additive such as a surfactant to pure water or ultrapure water, the electric conductivity is 500 μS /
cm or less, preferably 50 μS / cm, and more preferably 0.1 μS / cm or less may be used as the liquid or electrolytic solution. Examples of this electrolyte include NaCl and N
A neutral salt such as a ₂ SO _4, an acid such as HCl or H ₂ SO ₄ , and an alkali such as ammonia can be used, and may be appropriately selected and used depending on the characteristics of the workpiece.

According to a third aspect of the present invention, there is provided a chemical mechanical polishing section for chemically mechanically polishing the surface of the substrate, a feeding electrode and a processing electrode, and a portion between the substrate and the processing electrode or between the substrate and the feeding electrode. An electrolytic processing unit for arranging an ion exchanger on at least one side and applying a voltage between the power supply electrode and the processing electrode to electrolytically process the substrate surface in the presence of a liquid; and one for detachably holding the substrate A pusher that is arranged between the top ring and the chemical mechanical polishing section and the electrolytic processing section, and that can transfer the substrate to the top ring between the chemical mechanical polishing section and the electrolytic processing section. And a substrate processing apparatus. As a result, by transferring the substrate through the pusher, chemical mechanical polishing in chemical mechanical polishing and electrolytic processing (etching) in the electrolytic processing section
Both processes can be continuously performed.

According to a fourth aspect of the present invention, there is provided a chemical mechanical polishing section for chemically mechanically polishing the surface of the substrate, a feeding electrode and a processing electrode, and a portion between the substrate and the processing electrode or between the substrate and the feeding electrode. At least one of them is pure water or has an electric conductivity of 5
An electrolytic processing unit that supplies a liquid of 00 μS / cm or less and applies a voltage between the power supply electrode and the processing electrode to perform electrolytic processing on the surface of the substrate, and one or more tops that detachably hold the substrate. A ring and a pusher that is disposed between the chemical mechanical polishing portion and the electrolytic processing portion and that can transfer the substrate to the top ring between the chemical mechanical polishing portion and the electrolytic processing portion. Is a substrate processing apparatus.

The invention according to claim 5 is characterized in that the chemical mechanical polishing portion includes chemical mechanical polishing using fixed abrasive grains. It is a device. In this way, by using fixed abrasives and performing chemical mechanical polishing using pure water that does not contain abrasives or a liquid in which an additive such as a surfactant is added to pure water, it is expensive and easy to handle. The amount of troublesome polishing liquid used can be reduced.

The invention according to claim 6 is the substrate processing apparatus according to any one of claims 1 to 4, wherein an antioxidant is added to the liquid in the electrolytically processed portion. The invention according to claim 7 is the substrate processing apparatus according to any one of claims 1 to 6, wherein the chemical mechanical polishing section is provided with a plurality of polishing tables.

The invention according to claim 8 comprises the step of polishing the surface of the substrate by chemical mechanical polishing, and the step of removing by electrolytic processing using pure water or a liquid having an electric conductivity of 500 μS / cm or less. Thus, the substrate processing method is characterized in that the substrate is processed in a process of three or more steps.

In electrolytic processing, the processing rate increases when the current value supplied between the power supply electrode and the processing electrode is large (the processing rate decreases when the current value is small). On the other hand, regarding the voltage supplied between the power supply electrode and the processing electrode, if this voltage is increased, the value of the current flowing between the power supply electrode and the processing electrode increases, and as a result, the processing rate also increases. Therefore, at least one of the voltage and the current supplied between the machining electrode and the power feeding electrode is arbitrarily (for example, changed over time) to optimally adjust the machining rate according to the machining stage (situation). You can

Further, by combining conventional chemical mechanical polishing (CMP) and electrolytic processing using pure water, a liquid having an electric conductivity of 500 μS / cm or less, or an electrolytic solution, chemical mechanical polishing using a polishing liquid is performed. The load of can be reduced. The step of polishing by chemical mechanical polishing and the step of etching by electrolytic processing can be performed in any order and any number of times.

According to a ninth aspect of the present invention, there is provided a step of polishing the surface of a substrate by chemical mechanical polishing, and an ion exchanger is arranged at least at one of the substrate and the processing electrode or between the substrate and the feeding electrode. By applying a voltage between the electrode and the processing electrode to perform removal processing by electrolytic processing in the presence of pure water, a liquid having an electric conductivity of 500 μS / cm or less, or an electrolytic solution, a process of three or more steps is performed. A substrate processing method is characterized in that a substrate is processed.

According to a tenth aspect of the present invention, a step of polishing the surface of the substrate by chemical mechanical polishing using fixed abrasive grains, and electrolytic processing using pure water or a liquid having an electric conductivity of 500 μS / cm or less. The substrate processing method is characterized in that the substrate is processed by the step of removing and processing. Thereby, for example, the copper layer formed on the surface of the substrate is removed by using both chemical mechanical polishing and electrolytic processing, and when the barrier metal (barrier layer) made of TaN is exposed, the barrier metal is chemically mechanically polished. Can be removed with.

The present invention according to claim 11 has a power supply electrode and a processing electrode, supplies a fluid to at least one of the substrate and the processing electrode or between the substrate and the power supply electrode, and supplies the power supply electrode and the processing electrode. And a plurality of electrolytic processing portions for electrolytically processing the surface of the substrate by supplying a voltage between the two, and the substrate processing apparatus is characterized by processing the substrate by the plurality of electrolytic processing portions. Thereby, in the plurality of electrolytic processing portion, using any ion exchanger having different characteristics such as properties and types,
Electrolytic machining with different processing characteristics can be applied.

According to a twelfth aspect of the present invention, an ion exchanger is arranged in at least one of the plurality of electrolytically processed portions, between the substrate and the processing electrode or between the substrate and the feeding electrode. The substrate processing apparatus according to claim 11.

According to a thirteenth aspect of the present invention, an ion exchanger is arranged in at least one of the substrate and the processing electrode or between the substrate and the feeding electrode in all of the plurality of electrolytically processed portions. 11 is a substrate processing apparatus.
The invention according to claim 14 is characterized in that a plurality of electrolytically processed portions having the ion exchanger are provided, and different types of ion exchangers are provided respectively.
Alternatively, the substrate processing apparatus according to item 13. Thereby, for example, in the electrolytically processed portion using a highly elastic one as an ion exchanger, polishing is performed to eliminate the step difference on the surface of the substrate, and thereafter, in the electrolytically processed portion using a less elastic one as an ion exchanger, It is possible to proceed with a predetermined removal process after the step elimination is completed.

The invention according to claim 15 is the substrate processing apparatus according to any one of claims 11 to 14, further comprising a chemical mechanical polishing section for chemically mechanically polishing the surface of the substrate. . As a result, in the chemical mechanical polishing section,
For example, barrier metal (barrier layer) can be efficiently removed under different processing conditions from the electrolytically processed portion. The barrier metal can be removed by chemical mechanical polishing (CMP) using a polishing pad and a slurry.

According to a sixteenth aspect of the present invention, there is provided an ion exchanger holding member for holding an ion exchanger, a feeding electrode and a processing electrode, and at least one of the substrate and the processing electrode or between the substrate and the feeding electrode. An electrolytic processing unit for arranging an ion exchanger held by the ion exchanger holding member, applying a voltage between the power supply electrode and the processing electrode, and electrolytically processing the substrate surface in the presence of a liquid; A substrate processing apparatus comprising: an ion exchange member exchange means for exchanging the ion exchange member holding member of the processing unit with another ion exchanger holding member. Thereby, by changing the ion exchanger of the electrolytically processed portion via an ion exchanger holding member of, for example, a cartridge type that holds the ion exchanger, a single electrolytically processed portion can have a plurality of electrolytic conditions under different processing conditions. Processing can be performed.

The invention according to claim 17 is characterized in that a plurality of the ion exchanger holding members are provided.
The described substrate processing apparatus. The invention according to claim 18 is characterized in that an ion exchanger is arranged on at least one of a substrate and a processing electrode or between a substrate and a power feeding electrode, and a voltage is applied between the processing electrode and the power feeding electrode to obtain a liquid. In the presence of
In a method of electrolytically processing a substrate surface in a multi-step process, a step of electrolytically processing a substrate using an ion exchanger having high elasticity and a step of electrolytically processing a substrate using an ion exchanger having low elasticity And a substrate processing method.

According to a nineteenth aspect of the present invention, an ion exchanger is arranged on at least one of the substrate and the processing electrode or between the substrate and the feeding electrode, and a voltage is applied between the processing electrode and the feeding electrode. And performing electrolytic processing by relatively moving the substrate and at least one of the processing electrode or the power feeding electrode in the presence of ultrapure water, pure water, or a fluid having an electric conductivity of 500 μS / cm or less, A step of applying a voltage between the processing electrode and the power supply electrode to relatively move the substrate and at least one of the processing electrode and the power supply electrode in the presence of an electrolytic solution to perform electrolytic processing; and chemical mechanical polishing The substrate processing method is characterized in that the removal processing of the substrate surface is performed by using a plurality of any of the steps of polishing by.

According to a twentieth aspect of the present invention, either one of electrolytic processing using an electrolytic solution or chemical mechanical polishing after processing the conductive material on the substrate surface by electrolytic processing using an ion exchanger is performed. 20. The substrate processing method according to claim 19, wherein the barrier layer on the surface of the substrate is removed by. According to a twenty-first aspect of the present invention, after the conductive material on the surface of the substrate is removed by electrolytic processing using an ion exchanger, electrolytic processing using an ion exchanger different from the ion exchanger, an electrolytic solution. The substrate processing method is characterized in that the barrier layer on the substrate surface is removed by any combination of electrolytic processing or chemical mechanical polishing using.

The invention according to claim 22 is the method for processing a substrate according to claim 20 or 21, characterized in that the conductive material is copper. The invention according to claim 23,
23. The substrate processing method according to claim 20, wherein the barrier layer is TaN, Ta, TiN or WN.

[0034]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In addition, in this example, FIG.
The copper film 6 and the barrier metal 5 deposited on the insulating film 2 are removed so that the surfaces of the copper film 6 filled in the contact holes 3 and the wiring grooves 4 and the surface of the insulating film 2 are substantially the same. 18C shows an example in which the wiring made of the copper film 6 is formed by planarizing, but it is needless to say that the invention can be applied to other than the copper film.

FIGS. 1 and 2 show a substrate processing apparatus 10 according to a first embodiment of the present invention, and FIG. 3 shows an overall structure of a substrate processing system including the substrate processing apparatus 10. As shown in FIG. 3, this substrate processing system carries in / out a cassette, for example, shown in FIG. A pair of load / unload units 12 as loading / unloading units,
The reversing machine 14 for reversing the substrate W, the pusher 16 for delivering the substrate, the cleaning device 18, and the substrate processing device 10 are provided. Then, the load / unload unit 12, the reversing machine 14,
At a position surrounded by the pusher 16 and the cleaning device 18, a traveling-type transfer robot 20 is arranged as a transfer device that transfers and transfers the substrate W between them. Further, at the time of electrolytic processing by the substrate processing apparatus 10, the processing electrode 44 described below is used.
A control unit 22 is provided for performing various controls such as arbitrarily controlling the voltage applied between the power supply electrode 46 and the power supply electrode 46, or the current flowing between them.

As shown in FIGS. 1 and 2, the substrate processing apparatus 10 includes a chemical mechanical polishing section 24 for chemically mechanically polishing the surface of the substrate, and electrolysis using ultrapure water or pure water for the surface of the substrate. Electrolytically processed section 26 for etching by processing, and chemical mechanical polishing section 24 and electrolytically processed section 26 for detachably holding the substrate.
It is mainly configured by a transport unit 28 that transports between and.

The chemical mechanical polishing section 24 has a rotatable (rotatable) polishing table 30 and a polishing cloth 32 attached to the upper surface of the polishing table 30, and the upper surface of the polishing cloth 32 serves as a polishing surface 32a. And the polishing table 3
A polishing liquid nozzle 36 for supplying a polishing liquid (polishing liquid) 34 to the polishing cloth 32 is arranged above 0. The polishing cloth 32 available on the market is, for example, S manufactured by Rodel Co.
UBA800, IC-1000, etc. are mentioned. In chemical mechanical polishing, the flattening of the substrate is performed through the abrasive grains.
The polishing table 30 and the substrate W only have to make a relative motion, and the polishing table 30 may perform a scroll motion (translational rotary motion) or a reciprocating linear motion in addition to the rotation.

The electrolytic processing section 26 has a processing table 42 that is directly connected to the hollow motor 40 and that performs a revolving motion that does not rotate, a so-called scroll motion (translational rotary motion), when the hollow motor 40 is driven. . The processing table 42 is made of an insulating material, and fan-shaped processing electrodes 44 and power supply electrodes 46 are alternately embedded in the upper surface of the processing table 42 at predetermined intervals along the circumferential direction. The ion exchanger 4 is formed on the upper surfaces of the processing electrode 44 and the power feeding electrode 46.
8 are arranged. Further, a pure water supply pipe (not shown) extending from the outside is arranged inside the hollow motor 40, and the central portion of the processing table 42 communicates with the pure water supply pipe and is on the upper surface of the processing table 42. A through hole that opens is provided. As a result, pure water, preferably ultrapure water, passes through the pure water supply pipe and the communication hole, and the processing table 42.
Are supplied to the ion exchanger 48 on the upper surface of the.

Pure water has an electric conductivity of 10 for example.
The water is μS / cm or less, and the ultrapure water is water having an electric conductivity of 0.1 μS / cm or less, for example. Instead of pure water, preferably ultrapure water, the electric conductivity is 500 μS /
A liquid of cm or less, an arbitrary electrolytic solution may be used, or an antioxidant (for example, BTA; benzotriazole) may be added. By supplying an electrolytic solution or adding an antioxidant (for example, BTA; benzotriazole) during processing, processing instability due to processing products and gas generation can be removed, and uniform and reproducible processing can be obtained. To be BTA
Forms a thin film on the surface of various metals. In the electrolytic processing according to the present invention, the formed film can be removed by the scrubbing effect of the ion exchanger, and the exposed metal surface on which the oxide film is not formed is brought into contact with the processing electrode or the ion exchanger on the processing electrode. be able to.

In this example, a plurality of fan-shaped electrode plates 50 are arranged on the upper surface of the processing table 42 along the circumferential direction, and the cathode and the anode of the power source 52 are alternately connected to the electrode plates 50, The electrode plate 50 connected to the cathode of the power source 52 becomes the processing electrode 44, and the electrode plate 50 connected to the anode is the power feeding electrode 4
It is set to 6. This is because, for example, in the case of copper, an electrolytic processing action occurs on the cathode side, and depending on the material to be processed, the cathode side may be the power feeding electrode and the anode side may be the processing electrode. That is, when the material to be processed is, for example, copper, molybdenum, or iron, an electrolytic processing action occurs on the cathode side, so the electrode plate 50 connected to the cathode of the power source 52 becomes the processing electrode 44 and the electrode plate connected to the anode. 50 is used as the power supply electrode 46. On the other hand, in the case of aluminum or silicon, for example, the electrolytic processing action occurs on the anode side, so that the electrode connected to the anode of the electrode can be used as the processing electrode and the cathode side can be used as the power feeding electrode.

The ion exchanger 48 is made of, for example, a non-woven fabric having anion or cation exchange ability. The cation exchanger preferably carries a strongly acidic cation exchange group (sulfonic acid group), but may also carry a weakly acidic cation exchange group (carboxyl group). The anion exchanger preferably has a strongly basic anion exchange group (quaternary ammonium group), but may have a weakly basic anion exchange group (tertiary or lower amino group). .

Here, for example, the nonwoven fabric provided with the strong base anion exchange ability has a fiber diameter of 20 to 50 μm and a porosity of about 9
By a so-called radiation graft polymerization method in which 0% polyolefin non-woven fabric is subjected to graft polymerization after γ-ray irradiation,
It is prepared by introducing a graft chain and then aminating the introduced graft chain to introduce a quaternary ammonium group. The capacity of the ion-exchange groups introduced is determined by the amount of graft chains introduced. To carry out the graft polymerization, for example, acrylic acid, styrene, glycidyl methacrylate,
Furthermore, by using monomers such as sodium styrene sulfonate and chloromethyl styrene, and controlling the concentration of these monomers, the reaction temperature and the reaction time, it is possible to control the graft amount to be polymerized. Therefore, the ratio of the weight after the graft polymerization to the weight of the material before the graft polymerization is called the graft ratio. This graft ratio can be up to 500%, and the ion exchange groups introduced after the graft polymerization are , A maximum of 5 meq / g is possible.

The non-woven fabric provided with the strong acid cation exchange ability is similar to the above-mentioned method of imparting the strongly basic anion exchange ability, and a non-woven fabric made of polyolefin having a fiber diameter of 20 to 50 μm and a porosity of about 90% is provided with γ-rays. It is produced by introducing a graft chain by a so-called radiation graft polymerization method of irradiating with and then performing a graft polymerization, and then treating the introduced graft chain with, for example, heated sulfuric acid to introduce a sulfonic acid group. Further, a phosphate group can be introduced by treating with heated phosphoric acid. Here, the graft ratio can be up to 500%, and the ion exchange groups introduced after the graft polymerization can be up to 5 meq / g.

Examples of the material of the ion exchanger 48 include polyolefin polymers such as polyethylene and polypropylene, and other organic polymers. In addition to the non-woven fabric, examples of the material form include woven fabric, sheet, porous material, net, short fiber and the like.

Here, polyethylene or polypropylene generates radicals in the material by irradiating the material with radiation (γ ray and electron beam) first (pre-irradiation), and then reacts with the monomer to perform graft polymerization. be able to. As a result, a graft chain having high uniformity and less impurities can be formed. On the other hand, other organic polymers can be radically polymerized by impregnating a monomer and irradiating (simultaneous irradiation) with radiation (γ ray, electron beam, ultraviolet ray).
In this case, it lacks uniformity but can be applied to most materials.

As described above, the ion exchanger 48 is made of the non-woven fabric having the anion exchange ability or the cation exchange ability, so that the liquid such as pure water or ultrapure water and the electrolytic solution can freely move inside the non-woven fabric. Therefore, it becomes possible to easily reach an active site having a water splitting catalytic action inside the nonwoven fabric,
Many water molecules are dissociated into hydrogen ions and hydroxide ions. Furthermore, since the hydroxide ions generated by dissociation are efficiently carried to the surface of the processing electrode 44 as the liquid such as pure water or ultrapure water or the electrolyte moves, a high current can be obtained even with a low applied voltage.

Further, as shown in FIG.
A regeneration unit 54, which is located at the side of 2, regenerates the ion exchanger 48. The reproducing section 54 has a swingable swinging arm 56 and a reproducing head 58 held at the free end of the swinging arm 56. And power supply 5
2 (see FIG. 2), a potential opposite to that at the time of processing is applied to the ion exchanger 48 to promote dissolution of deposits such as copper adhered to the ion exchanger 48, thereby performing ion exchange during processing. The body 48 can be regenerated. In this case, the regenerated ion exchanger 48 is rinsed with pure water or ultrapure water supplied to the upper surface of the processing table 42.

The transport unit 28 is installed at a position sandwiched between the chemical mechanical polishing unit 24 and the electrolytic processing unit 26, and swivels along with a swivel motor 60 attached to the lower end of the swivel shaft 62.
have. The swivel shaft 62 is provided with a vertical moving plate 66 that moves up and down along the axial direction in accordance with the driving of a vertical moving motor 64 attached to the upper end, and a top ring head 68 that extends in the horizontal direction on the vertical moving plate 66. The base end of is fixed. An elevating shaft 72 is provided at a free end of the top ring head 68, and a substrate W is attached to a lower end of the elevating shaft 72.
A top ring 74 for removably holding is attached via a ball joint 76 so as to be tiltable.

A cylinder 78 is arranged parallel to the lifting shaft 72 to press the substrate W held by the top ring 74 via the lifting shaft 72 against the polishing surface 32a of the polishing table 30 with a predetermined pressing force. Further, a timing belt 86 is stretched between a driven pulley 80 attached to the elevating shaft 72 and a drive pulley 84 attached to the drive shaft of the top ring rotating motor 82. Thus, the top ring 74 rotates together with the lifting shaft 72.

As a result, the top ring head 68 is swung to move the top ring 74 to the pusher 16 shown in FIG.
, Just above the pusher 16,
The substrate W is received from the pusher 16. Then, while holding the substrate W by the top ring 74, the top ring head 68 is swung to move the top ring 74 to the polishing table 3
Move above 0. Thereafter, the top ring 74 is lowered, and the substrate W held by the top ring 74 is pressed against the polishing surface 32a of the polishing table 30 with a predetermined pressing force via the cylinder 78, and the polishing table 30 and the top ring 74 are pressed. At the same time, the abrasive liquid is supplied from the abrasive liquid nozzle 36 to the polishing cloth 32. Thereby, the chemical mechanical polishing of the surface (lower surface) of the substrate W is performed.

While the substrate W is held by the top ring 74, the top ring head 68 is swung to move the top ring 74 above the processing table 42.
Thereafter, the top ring 74 is lowered to bring the substrate W held by the top ring 74 close to or in contact with the ion exchanger 48 of the processing table 42. In this state, the processing table 42 and the top ring 74 are rotated, At the same time pure water,
Preferably, while supplying ultrapure water to the ion exchanger 48 on the upper surface of the processing table 42, the processing electrode 44 and the feeding electrode 46.
A voltage is applied between and. In this way, electrolytic processing (etching) of the surface (lower surface) of the substrate is performed.

Next, substrate processing (electrolytic processing) by this substrate processing system will be described. In this example,
By polishing the surface of the substrate W held by the top ring 74 by chemical mechanical polishing, etching by electrolytic processing, and further polishing by chemical mechanical polishing, the surface of the substrate W shown in FIG. The formed copper film 6 is removed by using both chemical mechanical polishing and electrolytic processing, and when the barrier metal (barrier layer) 5 made of TaN is exposed, the barrier metal 5 is removed by chemical mechanical polishing. Here is an example. It goes without saying that the step of polishing by chemical mechanical polishing and the step of etching by electrolytic processing can be performed in any order and any number of times.

First, for example, as shown in FIG. 18B, a substrate W having a copper film (conductive material) 6 formed on its surface as a conductor film (processed portion) is housed and set in the load / unload unit 12. The transfer robot 2 which transfers one substrate W from the cassette
The substrate W is taken out at 0, and the substrate W is conveyed to the reversing machine 14 and inverted when necessary, so that the surface of the substrate W on which the copper film 6 is formed faces downward. Next, the substrate W having its front surface facing down is transported to the pusher 16 by the transport robot 20 and placed on the pusher 16. And top ring head 6
8 is swung to move the top ring 74 directly above the pusher 16, and the pusher 16 is lifted so that the substrate W on the pusher 16 is adsorbed and held by the top ring 74.

Next, while holding the substrate W by the top ring 74, the top ring head 68 is swung to move the top ring 74 above the polishing table 30.
Then, the top ring 74 is lowered and the cylinder 78
The substrate W held by the top ring 74 is pressed against the polishing surface 32a of the polishing table 30 with a predetermined pressing force. In this state, the polishing table 30 and the top ring 74 are rotated, and at the same time, the polishing liquid is supplied from the polishing liquid nozzle 36 to the polishing cloth 32, and the chemical mechanical polishing of the surface (lower surface) of the substrate W is performed. Then, when it is detected that the film thickness of the copper film 6 on the substrate W reaches a predetermined value, the top ring 74 is raised, the rotations of the polishing table 30 and the top ring 74 are stopped, and further the supply of the abrasive liquid is performed. To stop the chemical mechanical polishing once.

Next, while holding the substrate W by the top ring 74, the top ring head 68 is swung to move the top ring 74 above the processing table 42. Thereafter, the top ring 74 is lowered to bring the substrate W held by the top ring 74 close to or in contact with the ion exchanger 48 of the processing table 42, and in this state, rotate the processing table 42 and the top ring 74, At the same time, while supplying pure water, preferably ultrapure water, to the ion exchanger 48 on the upper surface of the processing table 42, a voltage is applied between the processing electrode 44 and the feeding electrode 46 to electrolyze the surface (lower surface) of the substrate. Perform processing (etching).

That is, the electrolytic processing of the copper film 6 provided on the substrate W is carried out by hydrogen ions or hydroxide ions generated by the ion exchanger 48, and pure water, preferably ultrapure water, is ion-exchanged. By causing the hydrogen ions or hydroxide ions to be generated in a large amount by flowing inside the body 48, and supplying the hydrogen ions or hydroxide ions to the surface of the substrate W, efficient electrolytic processing can be performed.

Here, a functional group (a sulfonic acid group in a strongly acidic cation exchange material) that promotes the dissociation reaction of water by allowing pure water, preferably ultrapure water, to flow inside the ion exchanger 48. To supply sufficient water to increase the dissociation amount of water molecules, and remove the processing products (including gas) generated by the reaction with hydroxide ions (or OH radicals) by the flow of water, The efficiency can be increased.
Therefore, the flow of pure water, preferably ultrapure water, is necessary, and it is desirable that the flow of pure water, preferably ultrapure water, be uniform and uniform. The uniformity and uniformity of the supply of ions and the removal of processed products, and thus the uniformity and uniformity of processing efficiency can be achieved.

At this time, the control section 22 arbitrarily changes the voltage applied between the machining electrode 44 and the power supply electrode 46 or the current supplied during this to optimally adjust the machining rate.
For example, when it is detected that the barrier metal 5 made of TaN or the like is exposed, the electrolytic polishing is finished. That is, the processing electrode 4
In regard to the voltage supplied between the power supply electrode 4 and the power feeding electrode 46, if this voltage is increased, the value of the current flowing between the processing electrode 44 and the power feeding electrode 46 increases, and as a result, the processing rate also increases. Therefore, in this way, at least one of the voltage and the current supplied between the processing electrode 44 and the power supply electrode 46 is arbitrarily changed (for example, with time) to thereby change the processing rate according to the processing stage (situation). Can be adjusted optimally. Then, after the electrolytic processing is completed, the power supply 52 is disconnected and the top ring 74 is raised to stop the rotation of the processing table 42 and the top ring 74.

Next, while holding the substrate W by the top ring 74, the top ring head 68 is swung in the same manner as described above to move the top ring 74 above the polishing table 30, and the top ring 74 is used. While pressing the held substrate W against the polishing surface 32a of the polishing table 30 with a predetermined pressing force, the polishing table 30 and the top ring 74 are rotated, and at the same time, the polishing liquid is supplied from the polishing liquid nozzle 36 to the polishing cloth 32. , Chemical mechanical polishing of the surface (lower surface) of the substrate W is performed.

Then, as shown in FIG. 18C, the surfaces of the copper film 6 filled in the contact holes 3 and the wiring grooves 4 and the surface of the insulating film 2 are substantially flush with each other, and the copper film is formed. When it is detected that the wiring consisting of 6 is formed, the top ring 74 is raised, the rotations of the polishing table 30 and the top ring 74 are stopped, and the supply of the polishing liquid is stopped to complete the chemical mechanical polishing. To do.

After completion of this polishing, the top ring head 68
The substrate W is transferred to the pusher 16 by swinging. The transport robot 20 receives the substrate W from the pusher 16, transports it to the reversing machine 14 to invert it if necessary, further transports it to the cleaning device 18 for cleaning and drying, and then loads the substrate W on it.
Return it to the cassette in the unload section 12.

In this example, pure water, preferably ultrapure water, is supplied to the electrolytically processed portion 26. By performing electrolytic processing using pure water containing no electrolyte, preferably ultrapure water, it is possible to prevent extra impurities such as electrolyte from adhering to or remaining on the surface of the substrate W. You can Furthermore, since the copper ions and the like dissolved by electrolysis are immediately captured by the ion exchanger 48 in the ion exchange reaction, the dissolved copper ions and the like are re-precipitated on other portions of the substrate W or oxidized to form fine particles. The surface of the substrate W is not contaminated.

Here, since ultrapure water has a large specific resistance and it is difficult for current to flow, the distance between the electrode and the work piece should be as short as possible, or an ion exchanger should be sandwiched between the electrode and the work piece. Although the electric resistance is reduced by the method described above, the electric resistance can be further reduced and the power consumption can be reduced by further combining the electrolytic solution. In machining with an electrolytic solution, the part to be machined is slightly wider than the machining electrode, but with the combination of ultrapure water and an ion exchanger, almost no current flows in ultrapure water. Only the area where the processing electrode and the ion exchanger of the workpiece are projected is processed.

Further, instead of pure water or ultrapure water, pure water is used.
Alternatively, you may use an electrolyte solution in which an electrolyte is added to ultrapure water.
Yes. By using an electrolytic solution, the electrical resistance is further reduced.
Power consumption can be reduced. As this electrolyte
Is, for example, NaCl or Na _TwoSO_FourNeutral salts such as HC
l and H_TwoSO_FourAcid such as ammonia, and an alkali such as ammonia.
A solution such as liquid can be used.
You can select and use it. Substrate when using electrolyte
A small gap is provided between W and the ion exchanger 48 to prevent contact.
It is preferable to use touch.

Further, instead of pure water or ultrapure water, a surfactant or the like is added to pure water or ultrapure water so that the electric conductivity is 500 μS / cm or less, preferably 50 μS / cm or less, more preferably May use a liquid of 0.1 μS / cm or less (specific resistance of 10 MΩ · cm or more). In this way, by adding the surfactant to pure water or ultrapure water, a layer having a uniform suppressing action for preventing the movement of ions is formed at the interface between the substrate W and the ion exchanger 48. It is possible to reduce the concentration of ion exchange (melting of metal) and improve the flatness of the processed surface. Here, the surfactant concentration is preferably 100 ppm or less. If the value of electric conductivity is too high, the current efficiency is lowered and the processing speed is slowed, but it is 500 μS / cm or less, preferably 50
A desired processing speed can be obtained by using a liquid having an electric conductivity of μS / cm or less, and more preferably 0.1 μS / cm or less.

Further, by sandwiching the ion exchanger 48 between the substrate W and the processing electrode 44 and the power supply electrode 46, the processing speed is greatly improved. That is, the ultrapure water electrochemical processing is based on the chemical interaction between hydroxide ions in the ultrapure water and the material to be processed. However, the concentration of hydroxide ion, which is a reactive species contained in ultrapure water, is as small as 10 ⁻⁷ mol / L at room temperature and atmospheric pressure,
It is conceivable that the removal processing efficiency may decrease due to reactions other than the removal processing reaction (such as oxide film formation). Therefore, in order to carry out the removal processing reaction with high efficiency, it is necessary to increase hydroxide ions. Therefore, as a method of increasing hydroxide ions, there is a method of accelerating a dissociation reaction of ultrapure water with a catalyst material, and an effective catalyst material thereof is an ion exchanger. Specifically, the activation energy associated with the dissociation reaction of water molecules is reduced by the interaction between the water molecules and the functional groups in the ion exchanger. Thereby, dissociation of water can be promoted and the processing speed can be improved.

Here, for example, when electrolytic processing of copper is performed by using an ion exchanger 48 to which a cation exchange group is added, after the completion of the processing, the copper exchanges the ion exchange group of the ion exchanger (cation exchanger) 48. Since it is saturated, the processing efficiency at the time of the next processing becomes poor. When electrolytic processing of copper is performed using an ion exchanger 48 having an anion exchange group, fine particles of copper oxide are generated and attached to the surface of the ion exchanger (anion exchanger) 48. , There is a risk of contaminating the surface of the next processed substrate.

Therefore, in such a case, the swing arm 5
The reproduction head 58 held at the free end of 6 is the processing table 4
The second ion exchanger 48 is brought close to or in contact with the second ion exchanger 48, and in this state, a potential opposite to that at the time of processing is applied to the ion exchanger 48 via the power source 52 to dissolve the deposits such as copper attached to the ion exchanger 48. Ion exchanger 4 during processing by promoting
Play 8. In this case, the regenerated ion exchanger 48
Is rinsed with pure water or ultrapure water supplied to the upper surface of the processing table 42.

FIG. 4 shows a substrate processing apparatus 10a according to the second embodiment of the present invention. The substrate processing apparatus 10a differs from the substrate processing apparatus 10 shown in FIGS. 1 and 2 in that the chemical mechanical polishing section 24 has a fixed abrasive surface plate made of fixed abrasive on the surface (upper surface) of the polishing table 30. 90 is adhered, and the surface of the fixed abrasive platen 90 is used as the polishing surface 90a, and pure water containing no abrasive particles or an additive such as a surfactant is added to the pure water above the polishing table 30. The point is that a liquid nozzle 92 for supplying the added liquid 91 is arranged.

As the fixed abrasive, for example, an abrasive such as ceria or silica is fixed in a binder such as a thermosetting resin such as an epoxy resin, a thermoplastic resin, a core-shell type resin such as MBS or ABS, It is formed into a plate shape with a mold. The ratio of the abrasive grains to the binder to the porosity is, for example, abrasive grains: binder: porosity = 10 to 50%: 30 to 80%: 0 to 4
It is 0% (including the boundary value).

The fixed-abrasive surface plate 90 thus constructed constitutes a hard polishing surface 90a, and a stable polishing speed can be obtained while preventing the generation of scratches (scratches), and it does not contain abrasive grains. By supplying pure water or a liquid in which an additive such as a surfactant is added to pure water to perform chemical mechanical polishing, it is possible to reduce the amount of polishing liquid used, which is expensive and cumbersome to handle.

FIG. 5 shows a substrate processing apparatus 10b according to the third embodiment of the present invention. This substrate processing apparatus 10b differs from the substrate processing apparatus 10 shown in FIGS. 1 and 2 in that the polishing table 30 has a diameter slightly larger than the diameter of the substrate W, and is rotated by the rotation of the hollow motor 94. A non-revolutionary movement, that is, a so-called translational movement (scrolling movement) is used.
Along with the driving of the pump 98 interposed in the polishing motor 32, the polishing liquid is supplied to the polishing cloth 32 by passing through the hollow portion of the hollow motor 94 and the polishing liquid passage 30a provided inside the polishing table 30. Is. According to this example, the polishing table 30 can be downsized, and the polishing surface 3 of the substrate W and the polishing cloth 32 can be reduced.
The sliding speed with 2a can be made uniform over the entire surface of the substrate W.

FIG. 6 shows a substrate processing apparatus 10c according to the fourth embodiment of the present invention. The substrate processing apparatus 10c differs from the substrate processing apparatus 10 shown in FIGS. 1 and 2 in that the chemical mechanical polishing section 24 is provided with a driving roller 100 that rotates in association with driving of a motor An endless polishing cloth 10 is provided between the driven roller 102 and the driven roller 102.
The polishing cloth 104 that runs over 4 and travels above
The one in which the pressing base 106 is arranged below the
As the ion exchanger 48 arranged on the upper surface of the processing table 42 of the electrolytic processing section 26, in this example, a pair of strong acid cation exchange fibers 48a and 48b and a strong acid sandwiched between the strong acid cation exchange fibers 48a and 48b. This is the point of using a laminate having a three-layer structure with the cationic cation exchange membrane 48c. Here, the abrasive liquid nozzle 36 for supplying the abrasive liquid 34 is arranged on the upstream side of the pressing table 106.
Further, the ion exchanger (laminated body) 48 has good water permeability,
Not only is the hardness high, but the exposed surface (upper surface) facing the substrate W has good smoothness.

According to this example, the substrate W held by the top ring 74 is pressed against the polishing surface of the polishing cloth 104 by a predetermined pressing force through the cylinder 78, and the polishing cloth 104 is rotated while rotating the top ring 74. Run and at the same time polishing liquid nozzle 3
The polishing liquid 104 is supplied to the polishing cloth 104 from 6 to perform chemical mechanical polishing of the surface (lower surface) of the substrate W.

Here, the ion exchanger 48 has a multi-layer structure in which a plurality of ion exchange materials such as non-woven fabric, woven fabric, and porous membrane are stacked, thereby increasing the total ion exchange capacity of the ion exchanger 48. For example, when copper is removed (polished), the generation of oxides can be suppressed to prevent the oxides from affecting the processing rate. That is,
When the total ion exchange capacity of the ion exchanger 48 is smaller than the amount of copper ions taken in at the removal processing stage, oxides are produced on the surface or inside of the ion exchanger, which affects the processing rate. Exert. It is considered that the cause of this is that the amount of ion-exchange groups in the ion-exchanger has an effect, and that copper ions having a capacity over the above amount become oxides. Therefore, the ion exchanger 48 has a multi-layer structure in which a plurality of ion exchange materials are stacked, and the total ion exchange capacity is increased, so that the generation of oxides can be suppressed.

FIG. 7 shows a substrate processing apparatus 10d according to the fifth embodiment of the present invention. The substrate processing apparatus 10d includes a chemical mechanical polishing section 24 and an electrolytic processing section 26 having the same configurations as those of the substrate processing apparatus 10 shown in FIGS. A pusher 108 having a loading / unloading mechanism is arranged between the processing unit 26 and the processing unit 26.

Further, a swivelable first swivel shaft 110 is arranged on the side of the chemical mechanical polishing section 24, and swings with the swivel of the swivel shaft 110. A first top ring head 112 is provided so as to be vertically movable. A first lifting shaft 114 is rotatably supported at a free end of the first top ring head 112, and a first holding shaft 112 is detachably held at a lower end of the first lifting shaft 114.
A top ring 116 is attached. Further, a cylinder 118 that presses the substrate W held by the first top ring 116 against the polishing surface 32a of the polishing table 30 with a predetermined pressing force, and a first top ring rotation motor 120 that rotates the first top ring 116. It is equipped.

As a result, the substrate W placed on the pusher 108 is swung by the first swivel shaft 110 to push the pusher 10.
The substrate W held by the first top ring 116 that is sucked and held by the first top ring 116 that is moved directly above
Is rotated above the polishing table 30 by swiveling the first swivel shaft 110, the surface of the substrate W is subjected to chemical mechanical polishing at this position, and the substrate W after the polishing is moved to the first swivel shaft 110.
Can be swung to move directly above the pusher 108 and then returned to the pusher 108.

On the other hand, located on the side of the electrolytically processed portion 26,
A second swivel shaft 130 that is swivelable is arranged, and a second swivel shaft 130 is swung with the swivel of the swivel shaft 130.
A top ring head 132 is provided so as to be vertically movable. The second top ring head 132 has a second end at the free end.
The lifting shaft 134 is rotatably supported, and the second lifting shaft 1
A second top ring 136 that detachably holds the substrate W is attached to the lower end of 34. Further, a second top ring rotation motor 140 that rotates the second top ring 136 is provided.

As a result, the substrate W placed on the pusher 108 is swung by the second swivel shaft 130 to push the pusher 10.
Substrate W, which is sucked and held by the second top ring 136 that has been moved directly above 8 and held by this second top ring 136.
Is moved above the processing table 42 by swiveling the second swivel shaft 130, the surface of the substrate W is subjected to electrolytic processing (etching) at this position, and the substrate W after this electrolytic processing is moved to the second swivel shaft 130. Can be swung to move directly above the pusher 108 and then returned to the pusher 108.

According to this example, for example, the substrate polished by the chemical mechanical polishing section 24 is placed on the pusher 108, and the substrate placed on the polished pusher 108 is electrolytically processed by the electrolytic processing section 26. The substrate W through the pusher 108, so that the chemical mechanical polishing in the chemical mechanical polishing section 24 and the electrolytic processing (etching in the electrolytic processing section 26) can be performed. Both processes can be continuously performed.

8 and 9 show a substrate processing apparatus 10e according to the sixth embodiment of the present invention. This substrate processing apparatus 10
e is two chemical mechanical polishing sections 24a and 24b having the same configuration as the substrate processing apparatus 10 shown in FIGS.
And two electrolytic processing parts 26. Then, the chemical mechanical polishing portions 24a and 24b and the electrolytic processing portion 26
Are arranged at positions along the series, and a substrate transfer device 150 that holds and travels the substrate W is arranged beside them.

The substrate transfer device 150 includes a base 152.
With a configuration substantially similar to that of the transfer unit 28 of the substrate processing apparatus 10 shown in FIGS. 1 and 2, a traveling unit that travels along the base 152 when the traveling motor 154 provided on the base 152 is driven. 156 and. This running part 15
6 has a column 158, and this column 158 is provided with a vertical moving plate 162 that moves up and down along the axial direction in accordance with the driving of the vertical moving motor 160 attached to the upper end. Top ring head 164 extending horizontally
The base end of is fixed. This top ring head 1
An elevating shaft 166 is provided at the free end of 64, and a top ring 168 that detachably holds the substrate W is tiltably connected to the lower end of the elevating shaft 166 via a ball joint 170.

In parallel with the lifting shaft 166, the lifting shaft 166 is
A cylinder 172 is arranged to press the substrate W held by the top ring 168 via the wafer against the polishing surface 32a of the polishing table 30 with a predetermined pressing force. Furthermore, this lifting shaft 16
6, the timing belt 180 is stretched between the driven pulley 174 mounted on the drive shaft 6 and the drive pulley 178 mounted on the drive shaft of the top ring rotation motor 176.
68 is adapted to rotate integrally with the lifting shaft 166.

Thus, for example, in the case where the chemical mechanical polishing at one chemical mechanical polishing portion 24a, the electrolytic processing at the electrolytic processing portion 26, and the chemical mechanical polishing at the other chemical mechanical polishing portion 24b are performed in order. On the substrate W with the top ring 168
With the above held, the running part 156 is run to move the top ring 168 above the polishing table 30 of the chemical mechanical polishing part 24a. Then, top ring 16
8 and lowers the top ring 1 through the cylinder 172.
The substrate W held by 68 is used as the polishing surface 32 of the polishing table 30.
The polishing table 30 and the top ring 168 are rotated while being pressed against a by a predetermined pressing force, and at the same time, the polishing liquid nozzle 36
The polishing liquid is supplied to the polishing cloth 32 from. Thereby, the chemical mechanical polishing of the surface (lower surface) of the substrate is performed.

Next, while holding the substrate W by the top ring 168, the top ring 168 is raised to move the traveling portion 15
6 and run the top ring 168 on the electrolytically processed portion 26.
Is moved above the processing table 42. Then, the vertical movement motor 160 is driven to move the substrate W held by the top ring 168 to the ion exchanger 48 of the processing table 42.
In this state, the processing table 42 and the top ring 168 are rotated, and at the same time, pure water, preferably ultrapure water, is added to the ion exchanger 4 on the upper surface of the processing table 42.
While supplying the voltage to No. 8, a voltage is applied between the processing electrode 44 and the feeding electrode 46. This allows the surface of the board (bottom surface)
The electrolytic processing (etching) is performed.

Then, the top ring 168 is raised while the substrate W is held by the top ring 168, and the traveling unit 1
56 is moved to move the top ring 168 above the polishing table 30 of the chemical mechanical polishing section 24b. Thereafter, as described above, the polishing table 30 and the top ring 168 are rotated while pressing the substrate W held by the top ring 168 via the cylinder 172 against the polishing surface 32a of the polishing table 30 with a predetermined pressing force. At the same time, the abrasive liquid is supplied from the abrasive liquid nozzle 36 to the polishing cloth 32 to perform chemical mechanical polishing of the surface (lower surface) of the substrate.

Here, the chemical mechanical polishing parts 24a, 24
In b, chemical mechanical polishing with different process steps is performed. Changing this process step means changing at least one of the processing tool, the relative speed between the substrate and the polishing surface, the processing liquid, the pressing force of the substrate, and the like. The same chemical mechanical polishing section may perform chemical mechanical polishing with different process steps.

FIG. 10 shows a substrate processing apparatus 10f according to the seventh embodiment of the present invention. This substrate processing apparatus 10f is
The substrate processing apparatus 10 shown in FIGS. 1 and 2 is provided with two chemical mechanical polishing sections 24a and 24b having the same configuration and one electrolytic processing section 26. One of the chemical mechanical polishing sections 24a is provided. A load / unload mechanism having the same structure as that of the substrate processing apparatus 10d shown in FIG. Provided pushers 108a, 108
b are arranged respectively.

Further, each chemical mechanical polishing section 24a, 24b.
A laterally rotatable first swivel shaft 110 having a configuration substantially similar to that provided in the substrate processing apparatus 10d shown in FIG. 7 is disposed on the side of the pusher 108a or 108a.
The substrate W placed on the substrate b is sucked and held by the first top ring 116 which is moved right above the pusher 108a or 108b by rotating the first turning shaft 110, and the substrate is held by the first top ring 116. W is the first turning axis 110
Is rotated to move above the polishing table 30, and the surface of the substrate W is subjected to chemical mechanical polishing at this position, and the substrate W after polishing is rotated by the first rotating shaft 110 to push the pusher 108a or 108b. It can be moved right above and returned to the pusher 108a or 108b.

On the other hand, on the side of the electrolytic processing section 26, a second turning shaft 130 having a structure substantially similar to that provided in the substrate processing apparatus 10d shown in FIG. 7 is arranged, and is placed on the pusher 108a. The second substrate W placed on the substrate is moved right above the pusher 108a by rotating the second rotating shaft 130.
The substrate W sucked and held by the top ring 136 and held by the second top ring 136 is moved above the processing table 42 by turning the second turning shaft 130, and the surface of the substrate W is electrolytically processed at this position ( (Etching) is performed, and the substrate W after the electrolytic processing is swung around the second swivel shaft 130 to move to a position directly above the pusher 108a to move the pusher 108a.
It can be returned to.

According to this example, for example, the substrate electrolytically processed by the electrolytic processing section 26 is placed on the pusher 108a, and the substrate placed on the pusher 108a after this electrolytic processing is polished by the chemical mechanical polishing section 24a. Then, the substrate after polishing is placed on the pusher 108b, and the pusher 10 after polishing is placed.
The substrate placed on the surface 8b can be polished by the chemical mechanical polishing section 24b and returned to the pusher 108b, whereby the substrate W is transferred via the pushers 108a and 108b. , 24b, and electrolytic processing (etching) in the electrolytic processing section 26 can be continuously performed.

Although this example shows an example in which two pushers 108a and 108b having a load / unload mechanism are provided, for example, only between the chemical mechanical polishing section 24a and the electrolytic processing section 26. A pusher having a loading / unloading mechanism may be arranged so that a common top ring is used between the two chemical mechanical polishing sections.

11 and 12 show a substrate processing apparatus 10g according to the eighth embodiment of the present invention, and FIG. 13 shows the overall structure of a substrate processing system including the substrate processing apparatus 10g. As shown in FIG. 13, this substrate processing system carries in and out a cassette, for example, as shown in FIG. 18B, in which a substrate W having a copper film 6 as a conductor film (processed portion) on its surface is stored. It is provided with a pair of loading / unloading sections 12 as loading / unloading sections, a reversing machine 14 for reversing the substrate W, a pusher 16 for delivering the substrate, a cleaning apparatus 18, and a substrate processing apparatus 10g. And load / unload section 1
2. At a position surrounded by the reversing machine 14, the pusher 16, and the cleaning device 18, a traveling-type transfer robot 20 is arranged as a transfer device that transfers and transfers the substrate W among them. Furthermore, during electrolytic processing by the substrate processing apparatus 10g,
A control unit 22 is provided which performs various controls such as a voltage applied between a processing electrode 44 and a power supply electrode 46 described below, or a current flowing between them, as desired.

The substrate processing apparatus 10g is provided with a plurality of electrolytic processing parts. For example, in the example shown in FIGS. 11 and 12, two electrolytic treatments, a first electrolytically processed portion 26a and a second electrolytically processed portion 26b, which etch the surface of the substrate by electrolytic processing using ultrapure water or pure water are used. A processing unit is provided, and the substrate W is detachably held between the electrolytic processing units 26a and 26b, and the first electrolytic processing unit 26a and the second electrolytic processing unit 2 are provided.
A transport unit 28 that transports between 6b and 6b is arranged.

The first electrolytically machined portion 26a and the second electrolytically machined portion 26b are both directly connected to the hollow motor 40, and are driven by the hollow motor 40. It has a processing table 42 for performing exercise. The processing table 42 is made of an insulator, and fan-shaped processing electrodes 44 and power supply electrodes 46 are alternately embedded in the upper surface of the processing table 42 at predetermined intervals along the circumferential direction. . Then, the first ion exchanger 48d is provided on the upper surfaces of the processing electrode 44 and the feeding electrode 46 of the first electrolytic processing portion 26a, and the first ion exchanger 48d is provided on the upper surfaces of the processing electrode 44 and the feeding electrode 46 of the second electrolytic processing portion 26b. , And second ion exchangers 48e are respectively arranged.

Here, in the first electrolytically processed portion 26a, the first ion exchanger 48d having a high elasticity and being hard to be deformed is used in the second electrolytically processed portion 26b. As the second ion exchanger 48e, one having a low elasticity (having a smaller elastic modulus than the first ion exchanger 48d and easily deformed) is used. here,
As the ion exchanger 48d having high elasticity, for example, Nafio
n117 (manufactured by Dupont) and the like. As the ion exchanger 48e having a low elasticity, a woven fabric or a non-woven fabric which has been graft-polymerized to have an ion exchange capability can be used. The ion exchangers 48d and 48e used in the substrate processing apparatus 10c shown in FIG.
Of course, other than the layer structure, those having an arbitrary shape and structure can be used.

The first electrolytically processed portion 26a and the second electrolytically processed portion 26b are different only in the type (high or low elasticity) of the ion exchanger used, and other configurations are the same. Therefore, the ion exchanger 48d of the first electrolytic processed portion 26a and the ion exchanger 4 of the second electrolytic processed portion 26b.
Both 8e will be described below as the ion exchanger 48.

A pure water supply pipe (not shown) extending from the outside is disposed inside the hollow motor 40, and the processing table 4 is provided.
At the center of 2, there is provided a through hole communicating with the pure water supply pipe and opening on the upper surface of the processing table 42. As a result, pure water, preferably ultrapure water, is supplied to the ion exchanger 48 on the upper surface of the processing table 42 through the pure water supply pipe and the communication hole.

Further, as shown in FIG. 11, there is provided a regeneration unit 54 located on the side of the processing table 42 for regenerating the ion exchanger 48. The reproducing section 54 has a swingable swinging arm 56 and a reproducing head 58 held at the free end of the swinging arm 56. Then, a potential opposite to that at the time of processing is applied to the ion exchanger 48 via the power source 52 (see FIG. 12) to accelerate the dissolution of the deposits such as copper adhered to the ion exchanger 48 during the processing. The ion exchanger 48 can be regenerated. in this case,
The regenerated ion exchanger 48 is rinsed with pure water or ultrapure water supplied to the upper surface of the processing table 42.

The carrying section 28 is installed at a position sandwiched between the first electrolytic processing section 26a and the second electrolytic processing section 26b,
It has a turning shaft 62 that turns along with the driving of the turning motor 60 attached to the lower end. The turning shaft 62 is provided with a vertical moving plate 66 that moves up and down along the axial direction in accordance with the driving of a vertical moving motor 64 attached to the upper end.
A top end of a top ring head 68 extending in the horizontal direction is fixed to the base plate 6. An elevating shaft 72 is provided at a free end of the top ring head 68, and a top ring 74 that detachably holds the substrate W is tiltably connected to a lower end of the elevating shaft 72 via a ball joint 76. There is.

A cylinder 78 for raising and lowering the elevating shaft 72 is arranged in parallel with the elevating shaft 72. Further, a timing belt 86 is stretched between a driven pulley 80 attached to the elevating shaft 72 and a drive pulley 84 attached to the drive shaft of the top ring rotation motor 82.
As the motor 82 is driven, the top ring 74 rotates together with the lifting shaft 72.

As a result, the top ring head 68 is swung to move the top ring 74 to the pusher 1 shown in FIG.
6, the pusher 16 is lifted to receive the substrate W from the pusher 16. Then, while holding the substrate W by the top ring 74, the top ring head 68 is swung to move the top ring 74 to the processing table 42 of one of the first electrolytic processing portion 26a and the second electrolytic processing portion 26b. Move above. Thereafter, the top ring 74 is lowered to bring the substrate W held by the top ring 74 close to or in contact with the ion exchanger 48 of the processing table 42. In this state, the processing table 42 and the top ring 74 are rotated, At the same time, while supplying pure water, preferably ultrapure water, to the ion exchanger 48 on the upper surface of the processing table 42, a voltage is applied between the processing electrode 44 and the feeding electrode 46. In this way, electrolytic processing (etching) of the surface (lower surface) of the substrate is performed.

Next, substrate processing (electrolytic processing) by this substrate processing system will be described. First, for example, in FIG.
A loading / unloading section 1 for accommodating a substrate W having a copper film 6 formed on its surface as a conductor film (processed portion) as shown in FIG.
From the cassette set to 2, one substrate W is taken out by the transfer robot 20, and this substrate W is transferred to the reversing machine 14 and inverted when necessary, so that the surface of the substrate W on which the copper film 6 is formed is changed. Try to face down. Next, the substrate W having its front surface facing down is transported to the pusher 16 by the transport robot 20 and placed on the pusher 16. Then, the top ring head 68 is swung to move the top ring 74 to the pusher 1
6, the pusher 16 is raised, and the substrate W on the pusher 61 is suction-held by the top ring 74.

Next, while holding the substrate W by the top ring 74, the top ring head 68 is swung to move the top ring 74 above the processing table 42 of the first electrolytic processing section 26a. After that, top ring 7
4 is lowered to bring the substrate W held by the top ring 74 close to or in contact with the ion exchanger 48d of the processing table 42, and in this state, the processing table 42 and the top ring 7
4, while simultaneously supplying pure water, preferably ultrapure water, to the ion exchanger 48e on the upper surface of the processing table 42, a voltage is applied between the processing electrode 44 and the power supply electrode 46 to remove the substrate. Electrolytic machining of the surface (lower surface) is performed.

In the first electrolytically processed portion 26a, the substrate W is formed by using an ion exchanger 48d having a smooth surface and high elasticity.
Polishing is carried out for the purpose of eliminating the step generated on the surface of the copper film 6 laminated on the. That is, when the ion exchanger is soft and easily deformed, the ion exchanger follows the irregularities on the surface of the copper film 6, and it is difficult to selectively eliminate the step in the convex portion of the copper film 6, but By using a smooth and highly elastic (hardly deformable) ion exchanger, the processing proceeds only at the portion in contact with the copper film 6, and the step can be eliminated.

Then, the polishing of the copper film 6 on the substrate W proceeds,
When it is detected that this step on the surface has been eliminated, the power supply 5
The connection of 2 is cut off, the top ring 74 is raised, and the rotations of the processing table 42 and the top ring 74 are stopped.

Next, while holding the substrate W by the top ring 74, the top ring head 68 is swung to move the top ring 74 above the processing table 42 of the second electrolytic processing section 26b. Then, the top ring 74
Is lowered to bring the substrate W held by the top ring 74 close to or in contact with the ion exchanger 48e of the processing table 42. In this state, the processing table 42 and the top ring 74
While simultaneously supplying pure water, preferably ultrapure water, to the ion exchanger 48e on the upper surface of the processing table 42, a voltage is applied between the processing electrode 44 and the power feeding electrode 46 to rotate the surface of the substrate. Electrolytic machining of (lower surface) is performed.

In the second electrolytically processed portion 26b, the copper film 6 is polished by using an ion exchanger 48e having a smooth surface and low elasticity. That is, it is necessary to proceed with the removal processing of the copper film 6 to a predetermined thickness even after the elimination of the step difference. In that case, since the copper film 6 is flat, the ion exchanger has high elasticity. No need. Therefore, a low elasticity ion exchanger can be used for processing the copper film 6 whose step elimination has been completed in this way.

Then, the polishing of the copper film 6 on the substrate W proceeds,
For example, when it is detected that the barrier metal (barrier layer) 5 made of TaN or the like is exposed, the power supply 52 is disconnected,
The top ring 74 is raised to stop the rotation of the processing table 42 and the top ring 74.

Here, it is not necessary to change the relative speed or the like in the processing in the first electrolytic processing portion 26a and the second electrolytic processing portion 26b. However, lowering the current density
High ability to eliminate steps. Therefore, the first electrolytic processing portion 26a
It is preferable to relatively reduce the current density during the planarization processing in step 1) and increase the current density in the processing in the second electrolytic processing portion 26b after completion of the planarization to remove the entire surface of the substrate at high speed. Further, it is desirable to use ultrapure water as the liquid to be supplied in order to obtain the flatness in the processing in the first electrolytic processing section 26a, but the flatness in the processing in the second electrolytic processing section 26b is already high. Since it has been obtained, a liquid containing an electrolyte may be used as a processing liquid to proceed with the processing at a high speed. In that case, the ion exchanger does not have to be arranged in the second electrolytically processed portion 26b. Further, in the case where the film thickness is larger than the step, the second electrolytic processing section 26b may perform processing with an electrolytic solution, and then the first electrolytic processing section 26a may perform processing with ultrapure water. Good.

After completion of this polishing, the top ring head 68
The substrate W is transferred to the pusher 16 by swinging. The transfer robot 20 receives the substrate W from the pusher 16, transfers it to the reversing machine 14 to invert it if necessary, further transfers it to the cleaning device 18 for cleaning, and then loads / unloads the cleaned substrate W. Return to the cassette of part 12.

FIG. 14 shows a substrate processing apparatus 10h according to the ninth embodiment of the present invention. This substrate processing apparatus 10h is
A first electrolytic processing section 26a having the same configuration as that provided in the substrate processing apparatus 10g shown in FIGS. 11 and 12.
In addition to the second electrolytic processed portion 26b, a third electrolytic processed portion 26c is provided, and between the first electrolytic processed portion 26a and the second electrolytic processed portion 26b, and the second electrolytic processed portion. 26
Pushers 208a and 208b having a loading / unloading mechanism are arranged between b and the third electrolytic processing portion 26c. The third electrolytically processed portion 26c uses, as the third ion exchanger 48f, an optimal one for polishing and removing the barrier metal (barrier layer) 5 shown in FIG. 18, and other configurations. Is the same as the first electrolytically processed portion 26a and the second electrolytically processed portion 26b.

Then, a swivel shaft 210 which can freely swivel is arranged beside the first electrolytically processed portion 26a, the second electrolytically processed portion 26b and the third electrolytically processed portion 26c.
The substrate W placed on 8a or 208b is rotated by the rotary shaft 21.
The swivel arm 212 is swung via 0 to pusher 20.
8a or 208b is sucked and held by the top ring 216 moved immediately above, and the substrate W held by this top ring 216 is moved above the processing table 42 by turning the turning shaft 210, and the substrate is held at this position. The surface of W is subjected to electrolytic processing (etching), and the substrate W after this electrolytic processing
Can be returned to the pusher 208a or 208b by swiveling the swivel shaft 210 to move it immediately above the pusher 208a or 208b.

According to this example, the substrate W polished as described above until the barrier metal 5 made of TaN or the like is exposed is placed on the pusher 208b.
The substrate W is conveyed to the third electrolytic processing section 26c, and the barrier metal 5 is polished and removed by the third electrolytic processing section 26c. Then, as shown in FIG. 18C, the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 and the surface of the insulating film 2 are substantially flush with each other and are formed of the copper film 6. When it is detected that the wiring is formed, the polishing is finished. Then, the substrate W, which has been polished, is pushed by the pusher 2
It is returned to the cassette of the load / unload unit 12 via 08a, 208b and the like in the same manner as described above. This allows
First ion exchanger 48d and second ion exchanger 48
In the third electrolytic processing portion 26c using the third ion exchanger 48f different from e, it is possible to efficiently perform the removal processing of, for example, the barrier metal 5 under different processing conditions.

In this example, the barrier metal 5 is set to the third
The electrolytically processed portion 26c is used for polishing removal.
Instead of the third electrolytically processed portion 26c, a chemical mechanical polishing portion for chemically mechanically polishing the substrate is provided, and the chemical mechanical polishing portion is chemically polished by using, for example, a polishing pad and a slurry. The barrier metal may be removed by (CMP).

FIG. 15 shows the electrolytic processing section 300 of the substrate processing apparatus 10i according to the tenth embodiment of the present invention, and FIG.
Similarly, FIG. 17 shows a state when the ion exchanger holding unit 304 holding the ion exchanger 302 is attached to the electrode unit 318 of the electrolytic processing unit 300. FIG. 17 shows the overall configuration of the substrate processing system including the substrate processing apparatus 10i. Are shown respectively. As shown in FIG. 17, this substrate processing apparatus 10i includes a stocker 306a that stores a plurality of, for example, cartridge type ion exchanger holding members 304a and 304b that hold an electrolytically processed portion 300 and a membrane-like ion exchanger 302. , 30
6b and the ion exchanger holding members 304a, 304b provided in the electrolytic processing section 300 are connected to the stockers 306a, 306.
Ion exchanger holding members 304a, 30 housed in b
4b is mainly composed of exchange robots 308 and 309 as an ion exchanger holding unit exchange means. Note that another configuration of this substrate processing system is shown in FIG.
Since it is the same as that shown in FIG. 13, the same or corresponding members as those shown in FIG. The robots 308 and 309 have axes 30 respectively.
8b, 309b as the center of rotation, and arms 308a, 30
The ion exchanger holding members 304a and 304b are moved between the stockers 306a and 306b and the electrolytic processing section 300 by 9a.

As shown in FIG. 15, the electrolytic processing section 300 is vertically attached to the free end of a swing arm 310 which is swingable in the horizontal direction, and sucks the substrate W with its surface facing downward (face down). A substrate holding portion 312 to hold, a disk-shaped insulator made of an insulating material, and a fan-shaped processing electrode 314 and a feeding electrode 31.
6 and 6 are vertically provided with electrode portions 318 that are exposed and alternately embedded so that the surface (upper surface) of the processing electrode 314 and the surface (top surface) of the power feeding electrode 316 are flush with each other. An ion exchanger holding unit 304 holding the ion exchanger 302 is detachably provided on the electrode unit 318. When the ion exchanger holding unit 304 is mounted on the electrode unit 318, the ion exchanger 302 is detached. Are configured to integrally cover the surfaces of the processing electrode 314 and the feeding electrode 316.

In this example, the processing electrode 314 and the feeding electrode 3
Substrate holding section 312 as electrode section 318 having
A substrate having a diameter slightly larger than the diameter of the substrate W held at is used, and the electrode portion 318 is relatively moved (scrolling here) so that the entire surface of the substrate W is electrolytically processed at the same time.

The swing arm 310 for swinging the substrate holding portion 312 moves up and down via the ball screw 322 in accordance with the drive of the vertical movement motor 320, and rotates in accordance with the drive of the swing motor 324. It is connected to the upper end of 326. The substrate holder 312 is connected to a rotation motor 328 attached to the free end of the swing arm 310, and rotates (rotates) as the rotation motor 328 is driven.

The electrode portion 318 is directly connected to the hollow motor 330, and is driven by the hollow motor 330 to perform a scroll operation (translational rotational movement). A through hole 318a as a pure water supply unit for supplying pure water, more preferably ultrapure water, is provided at the center of the electrode portion 318. The through hole 318a extends through the through hole 332a provided in the crankshaft 332 directly connected to the drive shaft of the hollow motor 330 to perform the scroll operation, and supplies pure water that extends inside the hollow portion of the hollow motor 330. Tube 33
4 is connected. Pure water or ultrapure water is supplied through the through hole 332a and then is supplied to the entire processed surface through the water-absorbing ion exchanger 302.

The ion exchanger 302 is held by the ion exchanger holder 304 having a pair of split jigs 340a and 340b made of a hollow disk-shaped insulator and uniformly stretched (with a constant tension). The processing electrode 314 and the power feeding electrode 316 are closely fixed to the exposed surfaces. That is, as shown in detail in FIG.
The electrode portion 318 has a large-diameter base portion 318b and a small-diameter cylindrical electrode support portion 318c integrally connected to the upper portion of the base portion 318b. On the other hand, the ion exchanger 302
Is held by the ion exchanger holding portion 304 by sandwiching the peripheral edge portion with a pair of dividing jigs 340a and 340b and temporarily fixing it with bolts or the like. Then, in this state, as shown in FIG. 16 (b), the ion exchanger holding part 304 holding the ion exchanger 302 is pushed into the electrode supporting part 318 c of the electrode part 318 to be fitted to the ion exchanger holding part. By fixing 304 to the electrode support 318c, the ion exchanger 302 is fixed.

As a result, this ion exchanger holder 30
4 is pushed in, while preventing the occurrence of slippage between the ion exchanger 302 and the ion exchanger holding part 304, the ion exchanger 302 is always applied with a constant tension, The ion exchanger 302 can be fixed via the holding part 304.

In this example, the replacement robot 308
Has a pair of arms 308a that can be opened and closed, and the arms 308a sandwich and hold an ion exchanger holder 304 that holds the ion exchanger 302, whereby the ion exchanger mounted on the electrode portion 318 is exchanged. Body holding unit 304
And the ion exchanger holder 30 housed in the stocker 306
4 can be exchanged. That is, the exchange robot 308 is moved to a position where the arm 308a surrounds the ion exchanger holder 304 mounted on the electrode portion 318, and in this state, the arm 308a is closed to move the ion exchanger holder 304 from the left and right. Hold by holding. Then, by raising the arm 308a, the ion exchanger holder 304 is pulled out from the electrode supporting portion 318c of the electrode portion 318 and removed, the ion exchanger holder 304 is conveyed into the stocker 306, and the arm 308a is opened. so,
The ion exchanger holder 304 is housed in the stocker 306.

Next, the arm 30 of the exchange robot 308.
8a is located at a position surrounding the ion exchanger holder 304 to be exchanged stored in the stocker 306, and in this state, the arm 308a is closed to hold the ion exchanger holder 304 in the stocker 306 from the left and right. And hold. Then, the ion exchanger holding portion 304 is connected to the electrode portion 3
18 above the electrode support portion 318c, and the arm 30
By lowering 8a, the ion exchanger holder 304 is pushed into and fitted into the electrode support 318c of the electrode portion 318, and the ion exchanger holder 304 is fixed to the electrode support 318c. Fix it. Then, after opening the arm 308a to release the holding of the ion exchanger holder 304, the exchange robot 308 is returned to the original position.

According to this example, by changing the ion exchanger 302 used for processing in the electrolytic processing unit 300 via the ion exchanger holding unit 304 of the cartridge type which holds the ion exchanger 302, for example. A single electrolytic processing unit 300 can perform a plurality of electrolytic processing under different processing conditions, that is, using the ion exchanger 302 having different characteristics.

Although an example in which the ion exchanger is replaced by a robot is shown here, it may be replaced by a person. In that case, a mechanism for detachably fixing the ion exchanger holding members 304a and 304b to the electrode portion 318 serves as the ion exchanger exchanging means.

In this example, the substrate W is sucked and held by the substrate holding part 312 of the electrolytic processing part 300 and the swing arm 310 is swung to swing the substrate holding part 3 in the same manner as the above-mentioned examples.
12 is moved to the processing position immediately above the electrode portion 318. Next, the vertical movement motor 320 is driven to lower the substrate holding unit 312, and the substrate W held by the substrate holding unit 312 is placed on the upper surface of the electrode unit 318 and the ion exchanger holding unit 30.
4 is brought into contact with the surface of the ion exchanger 302 arranged via 4 or is brought close thereto. In this state, the through hole 318
Through a, while supplying pure water or ultrapure water from the lower side of the electrode portion 318 to the upper surface of the electrode portion 318,
A predetermined voltage is applied from the power supply 336 between the power supply electrode 316 and the power supply electrode 316, and at the same time, the substrate holding unit 312 is rotated (rotated) and the electrode unit 318 is scrolled to perform electrolytic processing.

At this time, the ion exchanger holding portion 304 holding the ion exchanger 302 suitable for this electrolytic processing is selected, and this ion exchanger holding portion 304 is attached to the electrode portion 318. Perform electrolytic processing using an exchange body. Then, in accordance with the processing conditions of the electrolytic processing, the ion exchanger 3 is inserted through the ion exchanger holder 304.
02 is used by changing it, whereby a single electrolytic processing section can perform a plurality of electrolytic processing under different processing conditions.
It can be carried out by selectively using an ion exchanger suitable for each processing condition.

[0130]

As described above, according to the present invention,
Electrochemical machining using pure water, preferably ultrapure water, etc., in combination with conventional chemical mechanical polishing (CMP) allows chemical mechanical polishing (C
It is possible to reduce problems such as contamination of the semiconductor substrate by the polishing liquid of MP), costs of the polishing liquid itself and chemicals used during cleaning, and environmental load in these treatments.

[Brief description of drawings]

FIG. 1 is a plan view of a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a front view of the substrate processing apparatus according to the first embodiment of the present invention.

FIG. 3 is a layout diagram showing an overall configuration of a substrate processing system including the substrate processing apparatus shown in FIGS. 1 and 2.

FIG. 4 is a front view of the substrate processing apparatus according to the second embodiment of the present invention.

FIG. 5 is a front view of a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 6 is a front view of a substrate processing apparatus according to a fourth embodiment of the present invention.

FIG. 7 is a plan view of a substrate processing apparatus according to a fifth embodiment of the present invention.

FIG. 8 is a plan view of a substrate processing apparatus according to a sixth embodiment of the present invention.

9 is a front view of FIG. 9. FIG.

FIG. 10 is a plan view of a substrate processing apparatus according to a seventh embodiment of the present invention.

FIG. 11 is a plan view of a substrate processing apparatus according to an eighth embodiment of the present invention.

FIG. 12 is a front view of a substrate processing apparatus according to an eighth embodiment of the present invention.

13 is a layout diagram showing an overall configuration of a substrate processing system including the substrate processing apparatus shown in FIGS. 11 and 12. FIG.

FIG. 14 is a plan view of a substrate processing apparatus according to a ninth embodiment of the present invention.

FIG. 15 is a partially cut front view showing an electrolytic processing part of a substrate processing apparatus according to a tenth embodiment of the present invention.

FIG. 16 is a view showing a state when an ion exchanger holding part is attached to an electrode part of the substrate processing apparatus according to the tenth embodiment of the present invention.

17 is a layout diagram showing an overall configuration of a substrate processing system including the substrate processing apparatus shown in FIGS. 15 and 16. FIG.

FIG. 18 is a diagram showing an example of forming a copper wiring in the order of steps.

[Explanation of symbols]

5 Barrier metal (barrier layer) 6 Copper film 7 Seed layer 10, 10a to 10i substrate processing apparatus 12 Load / unload section 22 Control unit 24, 24a, 24b Chemical mechanical polishing section 26, 26a, 26b, 26c, 300 Electrolytically processed part 28 Transport section 30 polishing table 32,104 polishing cloth 32a, 90a Polished surface 36 Abrasive nozzle 42 Processing table 44,314 Processing electrode 46,316 Feeding electrode 48,302 Ion exchanger 50 electrode plate 52 power supply 54 Playback section 58 Playhead 68,112,132,164 Top ring head 74,116,136,168 Top Ring 76,170 ball joint 90 Fixed Abrasive Surface Plate 92 Liquid nozzle 106 pressure table 108, 108a, 108b Pusher 150 substrate transfer device 154 Running section 304 Ion exchanger holder 304a, 304b Ion exchanger holding member 340a, 340b Dividing jig

Front page continuation (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/304 621 H01L 21/306 M 21/3205 21/88 K 21/306 K (72) Inventor Hozumi Yasuda Tokyo 11-1 Haneda Asahi-cho, Ota-ku, Ebara Corporation (72) Inventor Ikki Kobata 11-11 Haneda-Asahi-cho, Ota-ku, Tokyo (72) Inventor, Ibara Noro Ikutaro Haneda, Ota-ku, Tokyo 11-1 Asahimachi Ebara Co., Ltd. (72) Inventor Kaori Yoshida 11-1 Haneda Asahi-cho Ota-ku, Tokyo F-term in Ebara Corporation (reference) 3C058 AA07 AA18 CA01 CB01 DA12 5F033 HH11 HH21 HH32 HH33 HH34 JJ11 JJ21 JJ32 JJ33 JJ34 MM02 QQ48 RR04 5F043 AA23 BB18 BB30 DD14 DD16 EE08 EE14 EE35 EE36 FF07 GG03

Claims (23)

[Claims] 1. A chemical mechanical polishing unit for chemically mechanically polishing the surface of a substrate, a power feeding electrode and a processing electrode, and an ion exchanger on at least one of the substrate and the processing electrode or between the substrate and the power feeding electrode. An electrolytic processing part which is disposed and applies a voltage between the power supply electrode and the processing electrode to electrolytically process the surface of the substrate in the presence of a liquid; A substrate processing apparatus having a top ring which is movable between an electrolytic processing section and the electrolytic processing section. 2. A chemical mechanical polishing section for chemically mechanically polishing the surface of a substrate, a power feeding electrode and a processing electrode, and at least one of the substrate and the processing electrode or between the substrate and the power feeding electrode is pure water or An electrolytic processing unit that supplies a liquid having an electric conductivity of 500 μS / cm or less and applies a voltage between the power supply electrode and the processing electrode to perform electrolytic processing on the surface of the substrate, and detachably holds the substrate, A substrate processing apparatus having a top ring that is movable between the chemical mechanical polishing section and the electrolytic processing section. 3. A chemical mechanical polishing section for chemically mechanically polishing the surface of a substrate, a power feeding electrode and a processing electrode, and an ion exchanger on at least one of the substrate and the processing electrode or between the substrate and the power feeding electrode. An electrolytic processing part which is disposed and applies a voltage between the power supply electrode and the processing electrode to perform electrolytic processing on the surface of the substrate in the presence of a liquid; and one or more top rings for detachably holding the substrate, Located between the chemical mechanical polishing unit and the electrolytic processing unit, between the chemical mechanical polishing unit and the electrolytic processing unit,
A substrate processing apparatus having a pusher capable of transferring a substrate to the top ring. 4. A chemical mechanical polishing unit for chemically mechanically polishing the surface of a substrate, a power supply electrode and a processing electrode, and at least one of the substrate and the processing electrode or between the substrate and the power supply electrode is pure water or An electrolytic processing unit that supplies a liquid having an electrical conductivity of 500 μS / cm or less and applies a voltage between the power supply electrode and the processing electrode to electrolytically process the surface of the substrate, and detachably holds the substrate 1 One or more top rings, arranged between the chemical mechanical polishing portion and the electrolytic processing portion, between the chemical mechanical polishing portion and the electrolytic processing portion,
A substrate processing apparatus having a pusher capable of transferring a substrate to the top ring. 5. The chemical mechanical polishing unit includes chemical mechanical polishing using fixed abrasive grains.
5. The substrate processing apparatus according to any one of 4 to 4. 6. The antioxidant is added to the liquid in the electrolytically processed portion.
The substrate processing apparatus according to any one of 1. 7. The substrate processing apparatus according to claim 1, wherein the chemical mechanical polishing section is provided with a plurality of polishing tables. 8. The step of polishing the surface of the substrate by chemical mechanical polishing and the step of removing by electrolytic processing using pure water or a liquid having an electric conductivity of 500 μS / cm or less,
A substrate processing method characterized in that a substrate is processed by a process of three or more steps. 9. A step of polishing the surface of a substrate by chemical mechanical polishing, and an ion exchanger is disposed on at least one of the substrate and the processing electrode, or between the substrate and the power supply electrode, and the power supply electrode and the processing electrode are combined. It is characterized in that the substrate is processed in three or more steps by applying a voltage between the electrodes and removing it by electrolytic processing in the presence of pure water, a liquid having an electric conductivity of 500 μS / cm or less, or an electrolytic solution. Substrate processing method. 10. A step of polishing the surface of a substrate by chemical mechanical polishing using fixed abrasive grains, and pure water or electric conductivity of 5 or less.
A substrate processing method, characterized in that a substrate is processed by a step of removing and processing by electrolytic processing using a liquid of 00 μS / cm or less. 11. A power supply electrode and a processing electrode, wherein a fluid is supplied to at least one of the substrate and the processing electrode or between the substrate and the power supply electrode, and a voltage is supplied between the power supply electrode and the processing electrode. A substrate processing apparatus, comprising: a plurality of electrolytic processing portions for electrolytically processing the surface of a substrate, and processing the substrate by the plurality of electrolytic processing portions. 12. At least one of the plurality of electrolytically processed portions.
The substrate processing apparatus according to claim 11, wherein an ion exchanger is disposed on at least one of the substrate and the processing electrode or between the substrate and the feeding electrode. 13. The substrate processing apparatus according to claim 11, wherein an ion exchanger is arranged on at least one of the substrate and the processing electrode or between the substrate and the feeding electrode in all of the plurality of electrolytic processing portions. . 14. The electrolytic processing section having a plurality of the ion exchangers is provided, and different types of ion exchangers are provided respectively.
The substrate processing apparatus described. 15. The method according to claim 11, further comprising a chemical mechanical polishing section for chemically mechanically polishing the surface of the substrate.
15. The substrate processing apparatus according to any one of 14 to 14. 16. An ion exchanger holding member for holding an ion exchanger, a feeding electrode and a working electrode, and the ion exchanger holding member at least on one of a substrate and a working electrode or between the substrate and the feeding electrode. An electrolytic processing unit for arranging the ion exchanger held by, and applying a voltage between the power supply electrode and the processing electrode to electrolytically process the substrate surface in the presence of a liquid; and the ion exchanger of the electrolytic processing unit. An ion exchanger exchanging means for exchanging a holding member with another ion exchanger holding member. 17. The substrate processing apparatus according to claim 16, further comprising a plurality of the ion exchanger holding members. 18. An ion exchanger is arranged on at least one of a substrate and a processing electrode or between a substrate and a power feeding electrode, a voltage is applied between the processing electrode and the power feeding electrode, and in the presence of a liquid, In a method of electrolytically processing a substrate surface in a multi-step process, a step of electrolytically processing a substrate using an ion exchanger having high elasticity and a step of electrolytically processing a substrate using an ion exchanger having low elasticity A method for treating a substrate, comprising: 19. An ion exchanger is disposed on at least one of a substrate and a processing electrode or between a substrate and a power feeding electrode, and a voltage is applied between the processing electrode and the power feeding electrode to obtain ultrapure water, pure water. A step of performing relative electrolytic movement between the substrate and at least one of the machining electrode or the power feeding electrode in the presence of water or a fluid having an electric conductivity of 500 μS / cm or less; Any one of a step of applying a voltage between them and performing relative motion between the substrate and at least one of the processing electrode or the power supply electrode in the presence of an electrolytic solution to perform electrolytic processing, and a step of polishing by chemical mechanical polishing. A substrate processing method, characterized in that the substrate surface is removed by a plurality of steps. 20. After processing a conductive material on the surface of a substrate by electrolytic processing using an ion exchanger, the barrier layer on the surface of the substrate is formed by either electrolytic processing using an electrolytic solution or chemical mechanical polishing. The substrate processing method according to claim 19, wherein removal processing is performed. 21. After removing a conductive material from the surface of a substrate by electrolytic processing using an ion exchanger, electrolytic processing using an ion exchanger different from the ion exchanger, and electrolytic processing using an electrolytic solution. A substrate processing method, characterized in that the barrier layer on the surface of the substrate is removed by an arbitrary combination of processing or chemical mechanical polishing. 22. The substrate processing method according to claim 20, wherein the conductive material is copper. 23. The barrier layer comprises TaN, Ta, Ti
N or WN, characterized in that:
2. The substrate processing method according to any one of 2 above.