WO2020044927A1 - Catalyst reference device - Google Patents

Abstract

Provided is a catalyst reference device which is capable of preventing damage to a catalyst layer when planarizing a surface of a workpiece by catalyst referred etching using a catalyst body that has a catalyst layer. A catalyst referred etching device 200 includes: a catalyst body 240 that has a catalyst layer for removing only a portion of a surface of a workpiece that abuts or approaches the catalyst body 240 by reaction of a catalyst reference; and a processing performing unit that performs a surface forming operation that is required for removal by reaction of the catalyst reference after the surface of the workpiece is made to abut against or brought near the surface of the catalyst body 240 such that a catalyst film does not peel off.

Description

Catalyst reference device

The present invention relates to a catalyst reference device.

In recent years, in the field of manufacturing semiconductor devices, a catalyst-based etching method based on a catalyst-based surface has been proposed as a method for flattening a surface of a substrate such as SiC or GaN, such as a Si wafer, with high quality (for example, see Patent Reference 1).

The catalyst-based etching method described in Patent Document 1 polishes the substrate by causing the substrate and the polishing tool to move relative to each other while contacting each other.

JP-A-2015-128161

In a catalyst-based etching apparatus that performs a catalyst-based etching method, when a catalyst pad (catalyst body) having a catalyst layer on its surface comes into contact with or comes close to the surface of a workpiece in an inclined state, the catalyst pad ( The catalyst layer was sometimes separated from the catalyst body).
In particular, in the catalyst-based etching apparatus, since the surface of the workpiece is processed by the catalyst layer, the catalyst-based etching cannot be performed when the catalyst layer is peeled off from the catalyst pad. Therefore, it is desired that the damage of the catalyst layer of the catalyst pad can be suppressed.

The object of the present invention is to provide a catalyst reference device capable of suppressing breakage of a catalyst layer when the surface of a workpiece is flattened by catalyst reference etching using a catalyst body having a catalyst layer.

The present invention relates to a catalyst body provided with a catalyst layer for removing only a portion that is in contact with or in proximity to a surface of a workpiece by a catalyst-based reaction, and a catalyst film formed on the surface of the catalyst body by coating the surface of the workpiece with a catalyst film. And a process execution unit that performs a surface forming process operation necessary for removal by a catalyst-based reaction after contacting or approaching so as not to peel off.

Further, the catalyst-based reaction is a catalyst-based etching or a catalyst-based cleaning, and the processing operation performed by the processing execution unit is necessary for establishing a flattening process or a catalyst-based cleaning required for the catalyst-based etching. Preferably, at least one of the main operations is performed.

Also, the movable body in a range including a state in which the surface of the catalyst body and the surface of the workpiece are parallel, and a state in which the surface of the catalyst body and the surface of the workpiece are not parallel, It is preferable that a tilt movable mechanism that can tilt at least one of the catalyst body and the workpiece is provided.

Further, in the surface direction of the surface of the catalyzer or the surface of the workpiece, a difference in height between both ends of the surface of the catalyzer or the surface of the workpiece is 0.01 mm. It is preferable that at least one of the catalyst body and the workpiece can be tilted to the above range.

In addition, the tilt movable mechanism unit may be configured to control at least one of the catalyst body and the workpiece so that a tilt angle of a surface of the workpiece relative to a surface of the catalyst body is relatively 0.03 ° or more. Can be inclined.

According to the present invention, it is possible to provide a catalyst-based etching apparatus capable of suppressing damage to a catalyst layer when the surface of a workpiece is flattened by catalyst-based etching using a catalyst body having a catalyst layer.

It is a figure showing the whole composition of the work processing system of the present invention. It is the whole side view which shows the 1st example of a light irradiation catalyst reference etching apparatus. It is a longitudinal cross-sectional view which shows the detail of the 1st example of a light irradiation catalyst reference etching apparatus. FIG. 2 is a plan view mainly showing a configuration of a support surface plate and a container of a first example of the light irradiation catalyst-based etching apparatus. It is a figure showing composition of a main drive part of the 1st example of an apparatus for light irradiation catalyst standard etching. It is a figure which shows each electrode part in the 1st example of a light irradiation catalyst reference etching apparatus. It is a perspective view which shows the 2nd example of a light irradiation catalyst reference etching apparatus. It is the perspective view which looked at the 2nd example of a light irradiation catalyst standard etching device from the lower side. It is the fragmentary sectional view which mainly showed the structure of the support surface plate and container of the 2nd example of a light irradiation catalyst reference etching apparatus. FIG. 9 is a diagram illustrating control for starting the light irradiation catalyst-based etching operation after the workpiece held by the polishing head comes into contact with or approaches the surface of the catalyst pad. It is a photographic image which shows the state where the contact part of the conventional contact pad peeled at the peeling part.

Hereinafter, a preferred embodiment of the workpiece processing system 10 of the present invention will be described with reference to the drawings. The overall configuration of the workpiece processing system 10 according to the present embodiment will be described with reference to FIG. FIG. 1 is a diagram showing the overall configuration of a workpiece processing system 10 according to the present invention.

As shown in FIG. 1, a workpiece processing system 10 according to the present embodiment includes a mechanical or physical surface processing unit 11 for polishing the surface of a workpiece, a latent scratch removing unit 12, and a first cleaning unit. 13, a first drying unit 14, a latent scratch removal inspection unit 15, a surface finishing unit 16, a second cleaning unit 17, a second drying unit 18, and an inspection unit 19. In addition, mechanical or physical surface processing means 11, latent scar removing means 12, first cleaning means 13, first drying means 14, latent scar removal inspection means 15, surface finishing means 16, second cleaning means 17, second A transport unit 20 constituted by a robot or the like is used for movement between the drying unit 18 and the inspection unit 19.

The mechanical or physical surface processing means 11 performs a surface treatment of cutting, cutting, dicing, or polishing the surface of the workpiece by mechanical or physical processing. Examples of the workpiece include a SiC substrate (wafer). The workpiece is not limited to a substrate such as a SiC substrate. As the mechanical or physical surface processing means 11, for example, a CMP (Chemical Mechanical Polishing) technique for polishing the surface of a workpiece using an abrasive (abrasive) is used. CMP increases the mechanical polishing (surface removal) effect due to the relative movement between the polishing agent and the object to be polished by the surface chemical action of the polishing agent (abrasive grains) itself or the action of a chemical component contained in the polishing liquid. This is a technique for obtaining a smooth polished surface. In CMP, for example, hard diamond abrasive grains are used as an abrasive (abrasive grains). When the surface of the workpiece is polished by mechanical polishing such as CMP, even if the surface is apparently flat, there is a possibility that the damage of the so-called latent scratch remains therein. There are problems in that the electrical characteristics are adversely affected, and the strength of the workpiece is reduced due to latent scratches.

The latent scratch removing means 12 performs a surface treatment for removing a latent scratch formed on the workpiece by the mechanical or physical surface processing means 11. In the latent scratch removing means 12, not mechanical processing using abrasive grains, but surface treatment using a chemical reaction not using abrasive grains is performed. Therefore, the latent scratch removing unit 12 can remove the latent scratch formed on the workpiece by the mechanical or physical surface processing unit 11 without forming damage such as a latent scratch on the workpiece. The surface treatment using a chemical reaction without using abrasive grains in the latent scratch removing means 12 may be performed while performing a treatment by an electric action or a treatment of irradiating ultraviolet light. By performing surface treatment using a chemical reaction that does not use abrasive grains while performing treatment by electrical action or treatment by irradiating ultraviolet light, the chemical reaction of the catalyst and the like can be accelerated. The speed of the surface treatment of the object can be improved.

As the processing using a chemical reaction without using abrasive grains, for example, chemical polishing, chemical etching, or catalyst-based etching is used.
Chemical polishing is a surface treatment processing technique using a chemical reaction performed in a state where a polishing liquid that does not use abrasive grains is introduced.
Chemical etching is a surface treatment technology using a chemical reaction performed in a state where an etching solution that does not use abrasive grains is introduced.

Catalyst-based etching is a processing technology that utilizes a chemical reaction that does not use abrasives or abrasive grains at all. The catalyst-based etching is a processing method that does not introduce scratches, damaged layers or latent scratches on the surface to be processed by the processing.

Specifically, the catalyst-based etching is performed by placing a workpiece in one or both of a processing solution and a gas, and bringing a catalyst into contact with or in close proximity to a processing surface of the workpiece, thereby forming a processing solution and a gas. By making the workpiece relatively move while contacting or approaching the catalyst immersed in one or both of the above, the processing of the processing surface of the workpiece proceeds.

The workpiece is, for example, a substrate such as SiC, GaN, sapphire, gallium oxide, diamond, aluminum gallium nitride, or silicon; an oxide substrate; a ceramic substrate; an epitaxially grown film or a film-formed surface; ₂ ) a ternary mixed crystal, a quaternary mixed crystal, a compound, a substance having at least one component of Si, C, Ga, N, Al, O, In, and F; The workpiece used for the catalyst-based etching is not limited to the substrate. The workpiece may be of any shape. The workpiece is not limited to these as long as it can be processed by a catalytic reaction.
As the catalyst, a metal, for example, a platinum, nickel, or ceramic solid catalyst can be used.
As the processing solution, for example, a liquid that causes hydrolysis on the processing surface of the workpiece, a liquid that generates halogen radicals on the surface of the catalyst, or the like can be used.

Due to the nature of the workpiece, in the case where the surface treatment is performed chemically using the principle of catalyst-based etching, if a gas can be processed more rationally than a processing liquid, a gas is used. As an example of the catalyst-based etching using gas, there is one using an oxidation reaction.
Either rationalization of the catalyst-based etching reaction, improvement of fluidity of gas or liquid near the processing surface of the workpiece, prevention of oxidation of the processing solution, promotion of processing of the workpiece surface, or reactivation of the catalyst surface or removal of catalyst poisons For this purpose, both a liquid and a gas may be used by utilizing at least one of a mist, a microbubble aqueous solution, and a nanobubble aqueous solution. Further, at least one of the liquid and the gas may be heated. Alternatively, ultraviolet light (UV) may be used (used). Alternatively, electricity may be used.

For example, a nickel sulfate aqueous solution, water (pure water, ultrapure water), or the like can be used as a processing solution that causes hydrolysis on the processing surface of the workpiece. In addition, by using an aqueous solution of nickel sulfate as a processing solution, hydrolysis is caused on a processing surface of a workpiece, and plating can be formed on a catalyst pad 155 (described later) by applying a voltage. When performing catalyst-based etching by causing hydrolysis, with the processing solution interposed between the processing surface of the processing object and the catalyst, while contacting the processing object with the catalyst immersed in the processing solution, The relative movement generates a decomposition product by a hydrolysis reaction on the processing surface of the workpiece. Then, the processing surface of the workpiece is processed by dissolving the decomposition product into the processing solution.

Further, as a processing solution for generating a halogen radical, an aqueous solution of hydrofluoric acid or the like can be used. In the case of performing catalyst-based etching by generating halogen radicals, the work piece is placed in a processing solution in which a molecule containing a halogen that is not normally soluble in the work piece is dissolved, and platinum or ruthenium is used. Chemical reaction between halogen radicals generated on the surface of the catalyst and surface atoms of the workpiece by arranging a catalyst made of a metal catalyst or a ceramic-based solid catalyst that has resistance, such as a solid catalyst, in contact with or close to the processing surface of the workpiece. The workpiece is processed by eluting the halogen compound generated in the above. For example, in the case where the workpiece to be processed on the SiC substrate is subjected to catalytic reference etching, the workpiece is brought into contact with a catalyst immersed in the processing solution using platinum as a contact catalyst and an aqueous hydrofluoric acid solution as a processing solution. Processing is advanced by relative movement while doing.
The details of the configuration of the catalyst-based etching apparatus that performs the catalyst-based etching will be described later.

In addition, in the catalyst-based etching apparatus, in order to extend the merits of the catalyst-based etching method and complement the disadvantages of the catalyst-based etching method, the processing is performed so as to increase the flatness without leaving any damage on the surface of the workpiece. Flattening of the workpiece can be performed while irradiating the surface of the workpiece with light. Thus, in the medium-based etching method in which the removal reaction proceeds from the step end of the workpiece, for example, by providing a light source for irradiating the ultraviolet light, the catalyst can be applied from other than the step end of the workpiece that has received the ultraviolet light Processing by the reaction of the reference etching method becomes possible. Accordingly, not only the catalyst-based etching but also the light-irradiated catalyst-based etching to which light irradiation is further applied can be performed.
The details of the configuration of the light irradiation catalyst-based etching apparatus that performs the light irradiation catalyst-based etching will be described later.

The latent scratch removing means 12 reduces the latent scratch formed on the workpiece by the surface treatment to at least 30% or less by a surface treatment using a chemical reaction without using abrasive grains before finishing the workpiece. In advance (latent scratch removal step). The latent scratch removing unit 12 removes the latent scratch from the workpiece in advance so as to reduce the latent scratch to at least 30% or less, preferably 10% or less, more preferably 0%.

Specifically, the surface of the workpiece polished by the mechanical or physical surface processing means 11 such as CMP is an apparently flat surface. However, a workpiece polished by mechanical polishing such as CMP has an inherent damage of a flaw called a latent flaw. Latent scratches have the risk of being formed just below the surface of the workpiece during polishing by the mechanical or physical surface processing means 11, and by removing a thickness of, for example, about 100 nm from the surface of the workpiece. Almost all of the latent wounds can be removed. The thickness at which the latent scratch is removed is not limited to 100 nm because the depth at which the latent scratch is formed varies depending on the method and conditions of mechanical polishing.

The latent scratch formed on the workpiece by the mechanical or physical surface processing means 11 is obtained by subjecting the workpiece polished by mechanical polishing such as CMP to a surface treatment using a chemical reaction without using abrasive grains. By removing several nm to several tens of nm (for example, 20 nm), the surface can be made to be obvious. From this state, the latent scratch removing means 12 removes the latent scratches from the workpiece by at least 30% or less, preferably 10% or less, more preferably 0% by surface treatment using a chemical reaction without using abrasive grains. In advance so as to reduce The workpiece on which the latent scratch removal process has been performed in the latent scratch removal step is formed.

Here, in the latent scratch removing means 12 of the present embodiment, for example, processing is performed by a processing method based on catalyst-based etching. After performing the process of removing latent scratches by catalyst-based etching, the surface of the workpiece is coated with a metal, for example, a component composed of platinum, gold, chromium, or a ceramic solid catalyst, with harmful components that impair the quality. Attached as a kimono.

Therefore, in the present embodiment, cleaning (cleaning) for removing harmful components attached to the surface of the article is performed. Cleaning for removing harmful components attached to the surface of the workpiece is performed by the first cleaning unit 13.

{Circle around (1)} The first cleaning unit 13 cleans the surface of the workpiece on which the latent scratch removal processing has been performed by, for example, the catalyst-based etching. The first cleaning unit 13 includes a first main cleaning unit 13a and a finish cleaning unit 13b.

The first main cleaning means 13a is used for cleaning by bringing the workpiece to which the harmful component impairing the quality adheres into contact with or close to a cleaning substance which causes a catalytic reaction in relation to the harmful component and the workpiece. By the catalytic reaction of the substance, all or a part of the harmful component attached to the surface of the workpiece is removed together with a part of the surface of the workpiece (cleaning step).

For example, when the surface of the workpiece is processed by the catalyst-based etching in the latent scratch removing unit 12, the surface of the workpiece is used as a catalyst in the catalyst-based etching, for example, Pt (platinum). And other harmful substances are attached as metal contamination. The first main cleaning unit 13a is used as a catalyst in, for example, catalyst-based etching, and cleans harmful substances attached to the surface of the workpiece. In the first main cleaning unit 13a, for example, the above-described catalyst-based etching technique is applied, and only a portion in contact with or in proximity to the workpiece can be removed at the atomic level using a chemical reaction. In particular, when the surface of the object to be cleaned, which is a workpiece, has a one-by-layer step terrace structure or the like, the first main cleaning means 13a is used for cleaning when the atomic level flatness of the surface is to be maintained. Cleaning is possible at the atomic level from the edge. By using a catalyst as a cleaning substance, it is possible to perform a cleaning process of a harmful substance attached to the surface of the workpiece. Further, the first main cleaning unit 13a can perform cleaning without causing latent scratches.

(5) Examples of the catalyst used as a cleaning substance include noble metals, transition metals, ceramic solid catalysts, basic solid catalysts, and acidic solid catalysts. The harmful substances (components) attached to the surface of the workpiece and the surface components to be removed by cleaning the workpiece need to be mixed in the liquid by the cleaning substance and the fluid in the cleaning based on the catalyst. When selecting a cleaning substance, it is necessary to consider the workpiece and components of the cleaning substance that adhere to the workpiece. The cleaning substance used in the first main cleaning means 13a needs to be removable by the first finish cleaning means 13b without adversely affecting the workpiece as much as possible. It is necessary to select the catalyst used for the first main cleaning unit 13a and the first finish cleaning unit 13b in consideration of the compatibility between the workpiece, the cleaning substance, and the cleaning unit.

For example, conventionally, it has been considered that harmful substances such as Pt (platinum) attached to the surface of a workpiece cannot be removed without using boiling water or the like. Some components were less resistant to aqua regia and heat. Conventionally, even if an attempt is made to clean the workpiece by a cleaning method capable of removing the components to be removed attached to the workpiece, the cleaning liquid, the cleaning method, and the resistance of the workpiece may cause the component to adhere to the workpiece. In some cases, it is not possible to remove the components that you want to remove. On the other hand, in the first main cleaning means 13a, if a catalyst composed of Ni or Fe is used as a cleaning substance in a liquid or gas, the quality of Pt (platinum) or the like adhered to the surface of the workpiece is reduced. Harmful substances that have an adverse effect can be reduced or eliminated without using boiling water. In addition, the first main cleaning means 13a is not a cleaning that dissolves the entire surface only by applying a chemical to the surface as in cleaning using a general chemical, so that the surface roughness of the workpiece can be easily maintained.

Normal cleaning avoids adhesion of new particles (dust) and metal contamination. However, in the cleaning of the present invention (the first main cleaning means 13a), the workpiece is intentionally used as a cleaning substance, for example, a component serving as a new metal contamination source. The components of the cleaning substance (metal contamination and the like) attached to the workpiece are compatible with the cleaning means of the first finishing cleaning means 13b and the workpiece in the cleaning means of the first finishing cleaning means 13b. Therefore, by selecting a cleaning liquid or the like capable of removing components of a cleaning substance (metal contamination or the like) as the cleaning means of the first finishing cleaning means 13b, the surface of the workpiece can be processed without causing latent scratches and pits in the cleaning step. Harmful components can be reduced or removed.

Note that a substrate can be used as the workpiece, and other than the substrate, an object having a different thickness or shape can be used. As the workpiece, for example, a columnar shape, a prismatic shape, a cylindrical shape or a rectangular tube shape, a shape having irregularities or holes, or a three-dimensional shape can be used. The material of the workpiece may be an epitaxially grown film or a deposition surface, a compound, a ternary mixed crystal, a quaternary mixed crystal, an oxide, a ceramic, calcium fluoride (CaF ₂ ), In, Si, C, Ga, N, or O. And at least one of the atoms of Al, Zn and F. It is better to be able to polish (use) ultraviolet light (UV). The material of the workpiece is not limited to these as long as it can be processed by a catalytic reaction.

In the present embodiment, the first main cleaning unit 13a performs cleaning for removing adhered components such as Pt (platinum) adhered to the surface of the workpiece using Ni as a catalyst as a cleaning substance, for example. . In this case, the cleaning operation of the first main cleaning means 13a is performed by performing cleaning using Ni as a catalyst instead of performing etching using Pt as a catalyst by using the above-described apparatus for performing catalyst-based etching. Pt attached to the object can be removed. In this case, Pt is removed from the surface of the workpiece, and Ni adheres to the surface of the workpiece from which Pt has been removed.

The first main cleaning means 13a is used to remove a catalytic reaction-inhibiting component that inhibits the reaction of the catalyst before the workpiece to which the harmful component that impairs the quality adheres adheres to or comes close to the cleaning substance. A treatment (catalytic reaction inhibiting component removing step) in which at least one of a liquid, a gas, and ultraviolet light (UV) capable of acting on the cleaning substance may be performed. This makes it possible to effectively remove harmful components attached to the workpiece when cleaning the workpiece. Before the workpiece is brought into contact with or close to the cleaning substance, the surface of the workpiece may be irradiated with ultraviolet light (UV). By applying ultraviolet (UV) light, harmful components can be removed from the surface of the workpiece, for example, only a few layers of the atomic layer other than the end of the step terrace. Irradiation with ultraviolet light (UV) can improve the possibility of removing harmful components from the surface of the workpiece.

Further, the first main cleaning means 13a performs a catalytic reaction comprising at least one of a gas and a liquid before and / or after the workpiece to which the harmful component impairing the quality has adhered comes into contact with or comes close to the cleaning substance. A process of causing a component such as a catalyst poison to be deactivated to act on a catalyst component attached to a workpiece (a catalyst component operation step) may be performed. As a result, when cleaning the workpiece, the catalyst poison acts on the harmful components such as the catalyst component attached to the workpiece, so that the catalytic reaction by the harmful catalyst component attached to the surface of the workpiece is performed. Can be reduced.

{Circle around (1)} The first finish cleaning means 13b executes a cleaning process for removing harmful substances attached to the surface of the workpiece by the first main cleaning means 13a. The first finish cleaning means 13b cleans all or a part of the components of the cleaning substance by at least one of general cleaning means (cleaning) of wet cleaning, dry cleaning, scrub cleaning, or ultrasonic cleaning. The components of the substance are removed from the adhered workpiece (cleaning step). In the present embodiment, the cleaning substance used in the first main cleaning unit 13a is a cleaning substance that can be removed by general cleaning. General cleaning may be any cleaning as long as it can remove or reduce components adhered by the cleaning substance, and needs to satisfy the conditions of use of the workpiece.

Wet cleaning and scrub cleaning as general cleaning (cleaning) will be described.
Wet cleaning is cleaning using water as a medium. A typical example of wet cleaning is RCA cleaning. Cleaning such as RCA cleaning which does not generate latent scratches or pits on the workpiece due to compatibility with the workpiece is preferable.
Scrub cleaning is cleaning in which a contaminant attached to the surface of a workpiece (such as a substrate) is physically impacted to remove the contaminant from the surface of the workpiece (such as a substrate).

In the present embodiment, the first finish cleaning unit 13b removes, for example, a Ni component, which is a cleaning substance, attached to the surface of the workpiece by the first main cleaning unit 13a. It is removed by performing a general cleaning used for cleaning.

Conventionally, when a harmful substance such as Pt (platinum) attached to a workpiece is removed from the surface of the workpiece, the workpiece is immersed in aqua regia to adhere to the surface of the workpiece. The removed platinum had been removed. It is difficult to clean platinum adhered to a workpiece with aqua regia, because the aqua regia has a high risk to the human body and requires other facilities such as a high aqua regia.

On the other hand, according to the present invention, all or a part of the harmful component adhered to the surface of the workpiece by the catalytic reaction of the cleaning substance is removed by the first main cleaning means 13a. Together with it. This eliminates the need to use aqua regia or the like, which requires another facility for management and use, in cleaning the workpiece, thereby easily removing harmful components attached to the workpiece. This is particularly effective in the case of a combination that cannot be cleaned due to the relationship between the workpiece, the harmful substance to be removed, and the cleaning liquid. As an example, a case where the harmful substance adhering to the workpiece to be removed is Pt (platinum) and the workpiece is a workpiece that cannot withstand boiling aqua regia due to material or temperature conditions. There is.
In addition, by performing general cleaning by the first finish cleaning unit 13b, the cleaning substance attached during cleaning of the first main cleaning unit 13a can be easily removed.

The first drying unit 14 dries the workpiece cleaned by the first cleaning unit 13.

(4) The latent scratch removal inspection unit 15 inspects whether the latent scratch formed on the workpiece has been removed after the first cleaning unit 13 has washed and dried the first drying unit 14. As a method of confirming the presence or absence of a latent scratch formed on a workpiece, for example, there is a method of observing the surface of the workpiece after removing a predetermined thickness of the surface of the workpiece on which the latent scratch is formed.

A specific procedure for confirming the presence or absence of a latent scratch formed on the workpiece by the latent scratch removal inspection unit 15 will be described.
First, in the workpiece on which the latent scratch is formed, the surface of the workpiece is processed by a chemical reaction that does not use any abrasive or abrasive grains, so that the thickness of the latent scratch appears on the surface, for example, Remove several nm to several tens nm. In this case, for example, a latent flaw appearing on the surface of the workpiece is set as a reference before removing the latent flaw from the workpiece. The thickness of the workpiece such that the latent scratch appears on the surface may be a thickness that allows the latent scratch to be revealed to the extent that it becomes a reference when calculating the residual rate of the latent scratch. The thickness for removing the surface is set as appropriate.

(4) In the inspection step for checking the presence or absence of latent scratches, the surface of the workpiece is further removed by a predetermined thickness, for example, several nm to several tens of nm from the reference before removing the latent scratches. Then, every time a few nm to several tens of nm are removed, an inspection step is performed to confirm the presence or absence of a latent scratch by checking the difference from the reference before removing the latent scratch. Thereby, in the inspection step for confirming the presence or absence of latent scratches, the residual rate of latent scratches on the workpiece is reduced to at least 30% or less, preferably 10% or less, and more preferably to 0%. Inspect whether it has been done.

For example, when the surface is viewed from the front, the number of latent scratches, the total length of the latent scratches, and the total area of the range where the latent scratches are formed are calculated based on these. To judge. The latent scratch on the surface of the workpiece can be measured by, for example, an SiC wafer defect inspection apparatus (SICA manufactured by Lasertec Corporation).

When the workpiece inspected by the latent scratch removal inspection unit 15 does not satisfy the predetermined residual ratio of latent scratches, the workpiece is returned to, for example, the latent scratch removal unit 12 to remove latent scratches from the workpiece. Perform reprocessing. If the workpiece inspected by the latent scratch removal inspection unit 15 satisfies a predetermined residual ratio of latent scratches, the workpiece is transported to the surface finishing unit 16. Here, when the workpiece is a mass-produced product, for example, in the same lot, if a condition for removing latent scratches is found, the latent workpiece is removed under the same conditions for the remaining workpieces. Since the step of inspecting the workpiece can be omitted, the processing time can be reduced.

The thickness to be removed from the surface of the workpiece by the latent scratch removing means 12 is, for example, a device that has been subjected to the latent scratch removal processing under a plurality of latent scratch removal conditions, is converted into a device, and the device performance result is obtained. Based on the collected experimental data and the like, based on the collected experimental data and the like, the workpiece is processed until the workpiece is free of latent scratches (for example, 30% or less, 10% or less, 0%). The thickness to be removed from the surface of the object may be set in advance.

Conventionally, when mechanical polishing such as CMP is performed in the surface processing of a workpiece, the processing is performed such that the surface of the workpiece is flattened and rough polishing that is easily damaged is gradually performed. In such a case, the processing is performed to reduce the number of scratches. In other words, the surface of the workpiece is polished by making the abrasive particles finer, so that the surface of the workpiece is flat, and latent scratches are hardly formed. This conventional processing method is a processing method in which the surface of the workpiece is flattened so that latent scratches are hardly formed, and is not performed while observing the latent scratches of the workpiece.

On the other hand, the present invention is to flatten the surface of the workpiece after removing the latent scratch on the workpiece. In other words, in the method for processing a workpiece according to the present invention, the latent scratch formed on the workpiece by the surface treatment is subjected to a surface treatment using a chemical reaction without using abrasive grains before finishing the workpiece. And once removed from the workpiece in advance so as to reduce it to at least 30% or less. Thus, after performing the process of eliminating latent scratches from the workpiece, the finishing process is performed. Therefore, it is not necessary to perform the entire polishing process of the workpiece by the processing method at the atomic level which requires a processing time such as the catalyst-based etching from the step end, thereby shortening the flattening time of the workpiece. In addition, the surface of the workpiece can be processed at low cost.

In this way, the surface treatment using a chemical reaction without using abrasive grains removes latent scratches from the workpiece in advance before finishing, so that no new latent scratch is formed. Just finish the surface. Conventionally, surface finishing has been performed while removing latent scratches from the state where latent scratches exist.
Further, after the processing time is reduced by mechanical polishing such as CMP and the surface of the substrate as the workpiece is polished, the latent scratch formed by the mechanical polishing is removed from the workpiece in the latent scratch removing step. Can be removed from the surface. Therefore, in the case where the catalyst-based etching is performed in the finishing process, the flatness quality of the surface of the substrate to be processed can be ensured without causing a latent scratch on the substrate to be processed. Even in the case of performing finish processing by CMP, the risk of newly generating latent scratches can be minimized by shortening the finish processing time by eliminating the need to remove existing latent scratches.
Therefore, since the surface is finished after reducing the latent scratches to at least 30% or less before the finish processing, the risk of generating latent scratches in the finish processing is reduced, and the finish processing time is reduced without causing the workpiece to have latent scratches. In addition to being able to be shortened, latent scratches can be reduced to zero, and the surface of the workpiece can be finished as flat as required by the device. If no slurry is used, it is easy to handle and the surface of the workpiece can be processed at low cost.

For example, in the case of the present invention, if the number of latent scratches is reduced to zero in the latent scratch removal step of the present invention before the finish processing, the finish processing does not require the removal of latent scratches, so the formation of the surface is minimized. Processing is sufficient. When the finishing process is performed by the catalyst-based etching, if there are no latent scratches in the pre-processing, no latent scratches occur even in the finishing process. It is possible to finish. When the finishing process is CMP, it is a process of increasing the number of latent scratches from zero in the state of latent scratches. In the present invention, when the finishing process is CMP, it is sufficient that the finishing CMP is performed only for a short time until the surface is formed. Therefore, the risk that a new latent scratch is generated in the finishing process can be reduced as compared with the related art.

As in the past, for example, in a process of forming a surface from a state where several hundred latent scratches exist on the surface of the workpiece and performing the latent scratch as little as possible, conventionally, only a thickness of about 100 nm is used. In order to remove latent scratches, it is necessary to remove the entire surface evenly by finishing, which tends to reduce the processing rate. At this time, if the finishing is performed by CMP using abrasive grains, conventionally, only a thickness of about 100 nm must be removed by finishing. If the finishing is performed by CMP using abrasive grains, there is always a risk of generating new latent scratches until a thickness of about 100 nm can be removed from the surface before processing. According to the present invention, the problem can be improved. As a supplement, in the description of the conventional technology, the depth at which the latent scratch exists is described as about 100 nm, but the depth at which the latent scratch remains is determined by the processing method and conditions performed up to the step before the finishing step. Depends on. Therefore, the depth at which the latent scratch is present is not always about 100 nm.

(4) The surface finishing means 16 performs finishing processing on the surface of the workpiece from which the latent scratch has been removed by the latent scratch removing means 12 (surface finishing step). The surface finishing means 16 is executed by, for example, finishing CMP, catalyst-based etching, or the like. The surface finishing means 16 mainly performs a process of flattening the surface of the workpiece in the finishing process of the workpiece. The surface finishing means 16 performs a process of flattening the surface of the workpiece on which the latent scratch removal processing has been performed in the latent scratch removal step performed by the latent scratch removal means 12. In other words, the latent scratch removing step in the latent scratch removing means 12 is mainly processing for removing latent scratches from the surface of the workpiece, and the finishing processing in the surface finishing means 16 is for flattening the surface of the workpiece. Is the main processing.

In the finishing CMP, a polishing process is performed by using a slurry for finishing (for example, a slurry having fine abrasive grains) than the CMP used in the mechanical or physical surface processing means 11 described above, and the polishing is performed on the workpiece. It is performed within a range that does not cause damage. Therefore, the finish CMP can reduce the risk of causing a latent scratch on the workpiece more stochastically than the conventional method.

The catalyst-based etching is the same as the processing used in the latent scratch removing means 12 described above, and can also be used for the surface finishing processing. Catalyst-based etching, even when used in the finishing process, uses a chemical reaction that does not use any abrasives or abrasive grains, so it does not cause latent scratches on the surface of the workpiece, It can be used for finishing treatment for flattening the surface.

{Circle around (2)} The second cleaning means 17 cleans the surface of the workpiece on which the surface finishing treatment has been performed. The second cleaning unit 17 includes a main cleaning unit 17a and a finish cleaning unit 17b. The configuration and operation of the second cleaning unit 17 are the same as the configuration and operation of the first cleaning unit 13, and a description thereof will be omitted.

The second drying unit 18 dries the workpiece cleaned by the second cleaning unit 17.

The inspection means 19 inspects the workpiece after the surface processing. The inspection unit 19 measures, for example, the thickness and weight of the workpiece after the surface processing, and inspects whether or not a predetermined standard is satisfied. When the predetermined criterion is not satisfied, for example, it is controlled to be removed as a defective product or to reprocess the workpiece.
The workpiece inspected by the inspection means 19 is transported to the next step.

[Light irradiation catalyst-based etching equipment]
Next, a description will be given of a light irradiation catalyst-based etching apparatus (processing apparatus) capable of executing the catalyst-based etching performed in the latent scratch removing means 12 and the surface finishing means 16 in FIG. For example, a first example of a catalyst-based etching apparatus and a second example of a catalyst-based etching apparatus will be described. A first apparatus example and a second apparatus example of the light irradiation catalyst reference etching apparatus are processing apparatuses that perform a latent scratch removing step performed by the latent scratch removing unit 12 and a surface finishing step performed by the surface finishing unit 16. This is an example.

(First Example of Light Irradiation Catalyst-Based Etching Apparatus)
A first example of a light irradiation catalyst-based etching apparatus that performs light irradiation catalyst-based etching will be described. FIG. 2 is an overall side view showing a first example of the light irradiation catalyst-based etching apparatus 100. FIG. 3 is a longitudinal sectional view showing details of a first example of the light irradiation catalyst-based etching apparatus 100. FIG. 4 is a plan view mainly showing a configuration of the support platen 140 and the tub container 150 of the first example of the light irradiation catalyst-based etching apparatus 100. FIG. 5 is a diagram showing a configuration of the main drive unit PD of the first example of the light irradiation catalyst-based etching apparatus 100.

光 The light irradiation catalyst reference etching apparatus 100 in the first apparatus example includes a pair of flat processing portions SP1 and SP2 at left and right positions of the base 110 as shown in FIGS. The left and right flat processing portions SP1 and SP2 have the same structure, and have substantially the same weight except for processing accuracy errors. The details of the flattened portion SP1 will be described below with reference to FIG.

(3) As shown in FIG. 3, pedestals 121 and 122 having a symmetrical L-shaped cross section are arranged in parallel on the base 110, and extend in the front-back direction of FIG. 3 (the left-right direction of FIG. 2). Note that the left and right flat processing portions SP1 and SP2 are provided integrally. The left and right mounts 121, 121 and the mounts 122, 122 are respectively located on the same straight line. On each of the left and right mounts 121 and 122, a rail 131 constituting a linear guide 130 as a guide member is fixed along these. The rail 131 is provided with sliders 132 slidably movable at two positions in the longitudinal direction along the rails 131. On the sliders 132 on the left, right, front and rear sides, a rectangular support surface plate as a second holding means is provided. 140 (surface plate) is mounted.

(4) The support platen 140 is formed of a material that is not suitable for transmitting light having a wavelength effective for processing a workpiece. Specifically, the support surface plate 140 is formed of a material that does not transmit ultraviolet light. The support surface plate 140 is made of, for example, a metal material, a material having resistance to ultraviolet light and having strength, or a material which has been subjected to a surface treatment resistant to ultraviolet light. For example, the support surface plate 140 is formed of a metal such as SUS (stainless steel) that does not transmit ultraviolet light, a ceramic that does not transmit ultraviolet light, a resin that does not transmit ultraviolet light, or a composite material thereof. In order to make the surface more resistant to ultraviolet light, liquid or gas, the surface is surface-treated with a film formed or plated of platinum group or gold, or a resistant film such as Teflon (registered trademark) coat. It may be. Therefore, the strength of the support platen 140 is ensured as compared to the case where the support platen 140 is entirely made of quartz or the like for transmitting ultraviolet light. The support platen 140 is more preferably formed of SUS304, SUS316, or the like, which is good for use in a clean room and resistant to ultraviolet rays. Further, it is preferable that the support platen 140 has resistance to a water component or an oxygen component of 90 degrees or less. The temperature of the water component may be 75 degrees or less depending on the workpiece. For example, in the case where the workpiece is SiC, when the temperature of the water component exceeds about 60 degrees to about 70 degrees, the processing rate is critically improved. When the workpiece is SiC, it is sufficient that the workpiece is resistant to a water component of at least 73 degrees.

The supporting platen 140 has a plurality of slit grooves 141 (platen-side through-opening) through which ultraviolet light emitted from the UV lamp 125 passes. The plurality of slit grooves 141 extend in the width direction orthogonal to the moving direction of the support surface plate 140 (the direction in which the rail 131 extends) moved by the drive motor 182 described later, and move in the movement direction of the support surface plate 140 (the rail 131). (Extending direction). The plurality of slit grooves 141 are formed at positions where ultraviolet light from a UV lamp 125 (described later) disposed below the support surface plate 140 is transmitted. It is formed at a position where the ultraviolet light from the substrate is transmitted.

The support surface plate 140 can reciprocate linearly along the rail 131. In addition, the mounts 121 and 122 need only have a surface on which the rail is mounted, such as a flat bar, in addition to the L-shaped cross section. The base 110 and the frames 121 and 122 may be integrated. When the base 110 is integrated with the mounts 121 and 122, the merit is that the base 110 and the mounts 121 and 122 are separate from each other, for example, during a cutting process that increases the surface accuracy between the base 110 and the mounts 121 and 122. It is a point that is less likely to be distorted than when it is a body. Further, the guide member for guiding the support surface plate 140 is not limited to the above-described structure, and may be, for example, one that holds a guide shaft and slides along the guide shaft. The support platen 140 does not need to be particularly rectangular.

A UV lamp 125 (ultraviolet irradiation unit) that emits ultraviolet light and is used for light irradiation catalyst-based etching is disposed below the support surface plate 140. The UV lamp 125 emits ultraviolet light having a wavelength effective for processing a workpiece. For example, the UV lamp 125 is configured by an LED lamp that emits light having an ultraviolet wavelength. The UV lamp 125 may be configured by at least one of a low-pressure mercury UV lamp that emits ultraviolet light, a high-pressure mercury lamp, a metal halide lamp, an excimer lamp, and an LED lamp. When the UV lamp 125 is an LED lamp, an LED lamp may be provided between the support platen 140 and the catalyst pad 155, more preferably between the trough container 150 and the catalyst pad 155. When an LED lamp is provided between the support platen 140 and the catalyst pad 155, heat generated from the LED, which is the UV lamp 125, can be used in the latent scratch removing step and the surface finishing step. Further, for example, when the heat generated from the LED as the UV lamp 125 is processed by the catalyst-based etching in the latent scratch removing step or the surface finishing step, it can be used as the heat required for the catalyst-based etching processing. Specifically, the heat generated by the UV light emitting LED, which is a UV lamp 125 that outputs ultraviolet light toward the surface of the workpiece W, is dissipated into the processing solution and the processing solution is heated, and at the same time, the LED is cooled. May be configured.
At the center of the upper surface of the support surface plate 140, a tub container 150 (tub unit) for storing gas or liquid is mounted. The tub container 150 is detachable from the support platen 140. In the present embodiment, the tub container 150 is formed with the upper part opened. The tub container 150 is not limited to being open at the top, and may not be open at the top.

In the present embodiment in which the upper part is opened, the trough container 150 includes a bottom plate 151 disposed above the support platen 140 and a peripheral wall portion 152 rising from a peripheral edge of the bottom plate 151. The tub container 150 is formed in a tub shape capable of holding a processing solution or gas. The tub 150 is made of, for example, a material such as resin, metal, ceramics, or a glass-based metal oxide having a low transmittance of ultraviolet light. The tub 150 is preferably resistant to water components or oxygen components of 90 degrees or less. The temperature of the water component may be 75 degrees or less depending on the workpiece. For example, in the case where the workpiece is SiC, when the temperature of the water component exceeds about 60 degrees to about 70 degrees, the processing rate is critically improved. When the workpiece is SiC, it is sufficient that the workpiece is resistant to a water component of at least 73 degrees.

The processing solution is stored in the trough container 150. In the first example of the photoirradiation catalyst-based etching apparatus 100 of the present embodiment, by using, for example, an aqueous solution of nickel sulfate as the processing solution, hydrolysis is caused on the processing surface of the workpiece and voltage is applied. Thus, plating can be formed on the catalyst pad 155 (described later). When performing catalyst-based etching by causing hydrolysis, with the processing solution interposed between the processing surface of the processing object and the catalyst, while contacting the processing object with the catalyst immersed in the processing solution, The relative movement generates a decomposition product by a hydrolysis reaction on the processing surface of the workpiece. Then, the processing surface of the workpiece is processed by dissolving the decomposition product into the processing solution.

Here, if a hydrofluoric acid aqueous solution is used as the processing solution, if the ultraviolet transmitting member 157 described later is made of, for example, quartz, the hydrofluoric acid aqueous solution dissolves the quartz. Therefore, in the case of using the ultraviolet transmitting member 157 made of quartz in the light irradiation catalyst reference etching apparatus 100 that irradiates ultraviolet light, a hydrofluoric acid aqueous solution cannot be used as a processing solution. Therefore, in the present embodiment, as a processing solution, a liquid containing at least a water component, for example, ultrapure water or pure water, aqueous hydrogen peroxide, an aqueous solution containing a component such as nickel, which can be used as a catalyst and capable of electrolytic plating, and the like. A liquid that satisfies chemical resistance is used. Further, as the gas, a gas satisfying chemical resistance containing at least one of an oxygen component, a nitrogen component and an ozone component can be used.

Since the aqueous solution of hydrofluoric acid does not dissolve sapphire glass, an aqueous solution of hydrofluoric acid may be used as a processing solution by forming the ultraviolet transmitting member 157 with, for example, sapphire glass. However, when the ultraviolet transmitting member 157 is made of sapphire glass, it is necessary to select a light source that can transmit sapphire glass and emit light having a wavelength effective for processing a workpiece as a light source. In particular, when hydrogen fluoride is used, a toxic gas is generated in the human body. Therefore, it is necessary to remove the gas with a scrubber or the like to detoxify the gas.

The vat container 150 is disposed above the support platen 140. Therefore, the tub container 150 can be moved in the movement direction M by moving the support surface plate 140 in the movement direction M (the direction in which the rail 131 extends). As shown in FIG. 4, the tub container 150 is positioned by a pair of positioning members 153 and 153 on both sides in the width direction W orthogonal to the moving direction (direction in which the rail 131 extends) M at the lower end of the tub container 150. In this state, it is attached to the support platen 140. The pair of positioning members 153 and 153 are spaced apart in the width direction W corresponding to the length of the tub container 150 in the width direction W. The pair of positioning members 153 and 153 include a positioning main body 153a extending a predetermined length in the moving direction M (direction in which the rail 131 extends) M of the flat processing portions SP1 and SP2, and a moving direction of the flat processing portions SP1 and SP2 (the rail 131 (Extending direction) M, a positioning extension 153b extending inward at both ends. The pair of positioning members 153, 153 regulate the movement of the tub container 150 in the width direction W by the positioning main body 153a, and the moving direction (rail) of the flattened portions SP1, SP2 in the tub container 150 by the positioning extension 153b. It is fixed to the upper surface of the support surface plate 140 in a state where the movement in the direction (M in which the 131 extends) is restricted. The positioning member 153 may be a general clamp mechanism.

As shown in FIG. 4, a plurality of slit grooves 151a (bottom plate side through openings) through which ultraviolet light passes are formed in the bottom plate 151. The plurality of slit grooves 151 a formed in the tub container 150 are provided at positions corresponding to the plurality of slit grooves 141 formed in the support surface plate 140. In addition, the support surface plate 140 has a portion that does not transmit ultraviolet light from the UV lamp 125, and prevents irradiation of ultraviolet light to a portion that does not want to transmit ultraviolet light, thereby minimizing deterioration of the tub container 150 and the like. Suppress.

As shown in FIG. 3, an ultraviolet transmitting member 157 is attached to the lower side of the bottom plate 151 in the trough container 150. The ultraviolet transmitting member 157 is a transmitting member that can transmit ultraviolet light from the UV lamp 125 disposed below the support platen 140. In the present embodiment, the ultraviolet transmitting member 157 is made of, for example, quartz.

The ultraviolet transmitting member 157 is attached to the lower surface of the bottom plate 151 of the tub container 150 so as to close the plurality of slit grooves 151a (bottom plate side through opening) formed in the bottom plate 151 of the tub container 150. In a state where the ultraviolet transmitting member 157 is disposed below the bottom plate 151 in the tub 150, the periphery of the ultraviolet transmitting member 157 is subjected to a water stopping process in a water stopping section 157a. That is, the ultraviolet transmitting member 157 is attached to the bottom plate 151 in the water stop processing section 157a in a state where the water stop processing is performed.

Here, regarding the arrangement of the water stopping section 157a, the plurality of slit grooves 141 formed in the support platen 140 are provided in portions of the ultraviolet transmitting member 157 that do not correspond to the water stopping section 157a. As a result, the water stop processing unit 157a is arranged at a position where the ultraviolet light from the UV lamp 125 does not reach. Therefore, it is possible to prevent the water stoppage processing unit 157a from being deteriorated by the ultraviolet light emitted from the UV lamp 125.

As shown in FIG. 3, a catalyst pad 155 is provided on the entire surface of the bottom plate 151 of the trough container 150 as an example of a pad portion in which a catalyst layer is formed to a predetermined thickness by sputtering or the like. The catalyst pad 155 has a catalyst layer for flattening the surface of the workpiece W by catalyst-based etching. The catalyst pad 155 is arranged above the bottom plate 151 in the tub 150. A plurality of slit grooves 155a are formed in the catalyst pad 155. The plurality of slit grooves 155 a formed in the catalyst pad 155 are provided at positions corresponding to the plurality of slit grooves 151 a formed in the tub container 150 and the plurality of slit grooves 141 formed in the support platen 140. That is, the plurality of slit grooves 151a formed in the tub container 150, the plurality of slit grooves 141 formed in the support platen 140, and the plurality of slit grooves 155a formed in the catalyst pad 155 continuously penetrate vertically. It is configured to be able to transmit ultraviolet light from the UV lamp 125. The catalyst pad 155 preferably has resistance to a water component or an oxygen component of 90 degrees or less. The slit grooves 155a do not have to be all the same in dimensions and pitch and penetrate, and need not be provided continuously. Further, the slit groove 155a may be a hole or the like. For example, when it is difficult to remove the support platen 140, the plurality of slit grooves 155a formed in the catalyst pad 155 may be formed according to the processing operation, depending on the shape of the workpiece, depending on the processing operation. May be used by being attached to a support surface plate 140 provided with a plurality of slit grooves 141 in which dimensions, pitches, etc. are adjusted. For example, when it is desired to transmit only part of the ultraviolet (UV) light, the through hole of the slit groove 155a formed in the catalyst pad 155 may be optimized. The same applies to the plurality of slit grooves 151a formed in the tub container 150.

(4) As the material of the catalyst pad 155, rubber, resin, ceramics, glass, metal, or the like having resistance to a processing solution or gas is used. A transition metal such as Pt can be used as the catalyst. When metal is laminated on the catalyst, metal bonding is desirable. Examples of the metal include chromium, gold, and platinum.

As shown in FIG. 3, a main shaft 160 having a circular cross section is vertically provided above the vat container 150, and the main shaft 160 is rotatably held by a sleeve 161 in a vertical posture. The main shaft 160 is rotated by a drive motor 171 as a first drive unit. The sleeve 161 is moved up and down by a drive part 172 such as a drive cylinder or a ball screw as a second drive means, and the main shaft 160 is moved forward and backward with respect to the catalyst pad 155 accordingly. At the lower end of the main shaft 160, a polishing head 163 is provided. The workpiece W is held on the lower surface of the polishing head 163. The polishing head 163 is configured to be able to hold the workpiece W, and also functions as a holder as a first holding unit. The driving parts 172 such as the main shaft 160, the driving motor 171, and the driving cylinder are provided on the base 110 or above.

主 As shown in FIG. 2, a main drive unit PD is provided between the left and right flat processing units SP1 and SP2. FIG. 5 shows details of the main drive unit PD. As shown in FIG. 5, the main drive unit PD includes a bracket plate 181 provided on the base 110 in a vertical posture, and a shaft 190 extending vertically in the bracket plate 181 includes a bearing member 191 and a bearing member 191. By 192, it is held rotatably. An output shaft 182 a of a drive motor 182 provided in a vertical direction is inserted and coupled to the center of the lower end of the shaft body 190 along the bracket plate 181.

As shown in FIG. 5, one end of a pair of link plates 183 and 184 extending horizontally in the left-right direction is connected to the outer periphery of the intermediate portion of the shaft body 190 so as to be relatively rotatable. The link plate 183 connected to the lower side of the shaft body 190 is bent upward on the way, and the other end is connected to the support surface plate 140 of the flat processing portion SP1 so as to be relatively rotatable via the connection shaft 183a. (See FIG. 2). On the other hand, the link plate 184 connected to the upper side of the shaft body 190 is bent downward in the middle, and the other end of the link plate 184 is connected to the support surface plate 140 of the flat processing portion SP2 so as to be relatively rotatable via the connection shaft 184a. Are linked. Here, the upper surfaces of the support surface plates 140 of the flattened portions SP1 and SP2 are located on the same horizontal plane.

As shown in the enlarged view of FIG. 5, the intermediate portion of the shaft body 190 has the shaft cores C1 and C2 of the shaft portions 193 and 194 to which the link plates 183 and 184 are connected, respectively. It is eccentric from the output shaft 182a of the motor 182). That is, the shaft cores C1 and C2 of the shaft portion 193 to which the link plate 183 is connected and the shaft portion 194 to which the link plate 184 is connected are spaced apart from each other by the same amount d in the radial direction from the shaft center C of the shaft body 190. It is located at a 180-degree symmetric position.

Therefore, when the shaft 190 is rotated around the axis C by the drive motor 182, the axes C1 and C2 of the shafts 193 and 194 are pivotally moved around the axis C of the shaft 190. Along with this, each support surface plate 140 is reciprocated between the distances (amplitudes) 2d in opposite phases on the same straight line via the link plates 183 and 184. At this time, an example of the reciprocating movement is 2d = 3 mm, and the rotation speed of the shaft 190 (the reciprocating vibration frequency of the support platen 140) is 500 rpm. The value of the distance 2d is not limited to 3 mm, and may be an arbitrary value such as 10 mm.

When flattening the lower surface (working surface) of the workpiece W with the flattening apparatus having such a structure, the gas necessary for the catalytic reaction or the gas required for the catalytic reaction is placed in the tub 150 on the left and right support platens 140. A liquid, for example, in the case of a liquid, is filled with a liquid containing at least one of hydrogen fluoride (HF), a water component, a hydrogen peroxide component, and a sulfuric acid component, and is processed by a driving part 172 (see FIG. 3). W is brought close to or in contact with the catalyst pad 155. In this state, the support platen 140 and the tub container 150 provided thereon are linearly reciprocated in the horizontal direction along the rail 131 by the drive motor 182. Alternatively, the workpiece W may be rotated by rotating the main shaft 160 with the drive motor 171 (see FIG. 3).

{That is, the work surface of the work W and the catalyst pad 155 on which the catalyst layer in contact with the work W is brought into contact with each other or brought close to each other, and then reciprocated relative to each other. At this time, the reciprocating movement is used not as a sub-machining such as oscillating but as a main machining which is responsible for a main machining rate. As a result, the surface to be processed of the workpiece W is flattened by the catalyst-based etching with high accuracy on the order of the atomic level. At this time, the support bases 140 of the left and right flat processing parts SP1 and SP2 are reciprocated (vibrated) in opposite phases on the same straight line, so that the vibrations of each other are canceled out and the vibrating force on the base 110 is reduced. It becomes sufficiently small and its vibration is prevented.

The first example of the light irradiation catalyst reference etching apparatus 100 according to the present invention configured as described above has the following advantages as compared with the conventional light irradiation catalyst reference etching apparatus.
2. Description of the Related Art Conventionally, a surface plate used for a light irradiation catalyst-based etching method is formed of a material having excellent transparency of ultraviolet light emitted from a light source of an ultraviolet irradiation unit, for example, quartz or the like. However, in recent years, UV lamps having a short wavelength of about 180 nm or about 250 nm have been used as the main output wavelength so that the light irradiation catalyst-based etching process can proceed at a higher speed. Along with the change of the output main wavelength, it is necessary to select a material that can transmit light of a short wavelength such as around 180 nm for the material of the surface plate portion that can transmit light, and the cost tends to increase. In addition, by using a short-wavelength UV lamp, even if quartz capable of transmitting ultraviolet light of a UV lamp near 180 nm is prepared, the light-transmittable surface plate is damaged by the light of the UV lamp. . Therefore, it is necessary to replace the platen, and the platen may become a consumable item.

Furthermore, in recent years, there has been a need for larger workpieces. For example, as the size of the workpiece has changed from 2 inches to 8 inches, it has been necessary to increase the size of the light-transmittable surface plate used for processing by four times. In the future, there is a high possibility that the workpiece will be larger in size, and a large-area quartz material that can transmit short-wavelength light is required. As the material such as quartz is a material corresponding to a short wavelength or has a larger area, the price of the material increases. In the case of a surface plate that can transmit short-wavelength light with a large area of quartz, processing technology such as advanced surface polishing and special jigs and equipment for manufacturing the surface plate are required. The cost tends to be high. If the surface plate capable of transmitting light does not transmit light so as to be uniform over the entire surface of the workpiece to be processed, it will adversely affect the flattening of the workpiece. Further, as the size of the workpiece increases, the area of the workpiece that comes into contact with the catalyst surface at one time tends to increase as compared with the case where a small workpiece such as 2 inches is used. With the increase in the contact area of the workpiece with the catalyst surface, it has become necessary to apply a high load to the surface plate in order to optimize the load per unit area when processing the workpiece. .

As in the technique described in Japanese Patent Application Laid-Open No. 2012-64972 described in the Background Art, a head portion that holds a workpiece and a surface plate that is larger than the head portion are provided, and the surface plate is rotated. In the case of the conventional light irradiation catalyst-based etching method that is configured to allow the light transmitting platen to support and transmit power, a shaft such as a UV lamp that outputs light when the light transmitting platen rotates is used. In order to avoid contact, it was necessary to arrange at least at the center or at the outermost periphery. However, when trying to maintain a load per unit area with the increase in the size of the surface plate, it is necessary to apply a higher load to the light-transmittable surface plate than when the size of the workpiece is small, such as 2 inches. . In addition, since the size of the workpiece is larger than before, the moment load is also easily applied. When the size of the surface plate is increased while keeping the same thickness as that of the conventional one, the surface plate is made of, for example, quartz or sapphire, and thus has low strength and is easily broken. Therefore, it is necessary to increase the thickness of the platen so as not to damage the platen, leading to an increase in cost. Some surface plates cannot be technically produced depending on the thickness, size and shape, and the wavelength of light to be transmitted. Further, since the power of short-wavelength light is easily attenuated, the distance from the UV lamp to the workpiece is limited. Therefore, in the light irradiation catalyst-based etching apparatus, light from the ultraviolet irradiation part can be transmitted to the processing surface of the workpiece, and light can be transmitted, which can cope with an increase in cost that can be a consumable with sufficient strength. A good surface plate was needed.

On the other hand, in the first example of the light irradiation catalyst-based etching apparatus 100 according to the present invention, the conventional platen made of quartz was reviewed in order to cope with a large size, load and short wavelength light. By forming the supporting platen 140 with SUS304, SUS316, or the like, the strength was secured and the thickness was maintained. In addition, as a measure for reducing consumable parts, the support surface plate 140 is made of a member that does not become a consumable part, and an ultraviolet transmitting member 157 is disposed so as to cover the slit groove 141 of the support surface plate 140 to transmit ultraviolet light. It was configured as follows. Thus, the support plate 140 can be replaced as a consumable component without using the support platen 140 as a consumable component. The light irradiation catalyst reference etching apparatus 100 configured as described above can secure the strength of the support base 140 while promoting the catalyst reference etching by the ultraviolet light irradiated by the UV lamp 125. Therefore, even if the total load of the members arranged above the support surface plate 140 increases, breakage of the support surface plate 140 can be suppressed.

The light irradiation catalyst-based etching apparatus 100 according to the present invention includes the above-described support platen 140, tub container 150, ultraviolet transmitting member 157, and catalyst pad 155. In order to transmit the ultraviolet light to the workpiece, holes and openings for light transmission according to the averaging and flattening processing operations are formed in the support platen 140, the tub container 150, and the catalyst pad 155, so that the processing is performed. The transmission space necessary for the light to hit the workpiece was secured. By fitting an ultraviolet transmitting member 157 such as quartz, which is optimal for light transmission, into the transmission space, it is possible to prevent the liquid or gas stored in the tub 150 required for processing from flowing into the area such as the UV lamp from the processing area.

In addition, in the light irradiation catalyst-based etching apparatus 100 according to the present invention, the most suitable ultraviolet transmitting member 157 was selected in consideration of cost, chemical solution or gas used in processing, and light of a desired wavelength. For example, it was configured using a quartz substrate flowing in a mass production process. A semiconductor-grade quartz substrate that guarantees light transmission can be used in a clean room and has a stable light transmission quality. It can be obtained at a lower cost than creating a dedicated UV transmitting member. The flatness is stable. Further, the quartz substrate is compatible with large diameters such as 300 mm. Quartz used in the ultraviolet transmitting member 157 is deteriorated by use of short-wavelength UV light. However, since the quartz substrate is inexpensive, it can be replaced at low cost. A substrate formed of sapphire or the like can be used for the transmitting portion depending on the compatibility between the transmitted wavelength light and the chemical or gas. The use of a substrate made of quartz or the like for the ultraviolet transmitting member 157 is apt to be broken because the substrate itself is thin, such as 1 mm, but the present invention receives the load on the support platen 140 so that the ultraviolet transmitting member 157 is not damaged. I have. Further, the tub container 150 is made of a material that is resistant to liquids and gases used in processing.

In addition, in the first example of the light irradiation catalyst reference etching apparatus 100 according to the present invention, the catalyst reference etching using electricity is also performed. In the first example of the light irradiation catalyst-based etching apparatus 100, a configuration relating to each electrode used when processing is performed by an electric action will be described. In the light irradiation catalyst reference etching apparatus 100, an electrode for plating, an electrode for electrolytic polishing, an electrode for UV electricity, and the like are arranged. FIG. 6 is a diagram showing each electrode unit in the first example of the light irradiation catalyst-based etching apparatus.

As shown in FIG. 6, the polishing head 163 is provided with a head-side DC voltage power supply section 165 used when irradiating ultraviolet rays (UV), and a head-side auxiliary electrode 164a used during plating or electrolytic polishing. Can be The tub container 150 is provided with the reference electrode 103 and the conducting part 101.

Inside the vat container 150, the catalyst pad 155 is fixed to the bottom plate 151 of the vat container 150 by an insulating polycarbonate screw 102 in a state where a washer constituting the energizing unit 101 is in contact with the surface of the catalyst pad 155. I have. The surface of the catalyst pad 155 becomes a working electrode 155b by the electricity from the current supply unit 101. On the tub container 150 side, since the processing solution is stored in the tub container 150, power is supplied between the working electrode 155b, the head-side auxiliary electrode 164a, and the reference electrode 103, which are the surfaces of the catalyst pad 155. Thus, it is possible to form plating on the working electrode 155b and to perform electrolytic polishing. This makes it possible to maintain the catalytic activity on the catalyst surface. Therefore, it is easy to form, for example, a nickel catalyst layer made of electrolytic plating on the surface of the catalyst pad 155.

In the polishing head 163, a current flows between the head-side auxiliary electrode 164a and the working electrode 155b that is the surface of the catalyst pad 155 in a state where the polishing head 163 is placed in the processing solution stored in the tub container 150, Electropolishing and plating can be performed on the catalyst surface. As a result, the catalytic activity on the catalyst surface is maintained and the catalyst can be regenerated, so that the sustainability of the catalyst-based etching on the contact surface between the catalyst and the workpiece W is improved.

For example, in the case of ultraviolet (UV) light, a head side DC voltage power supply section 165 for supplying a DC voltage power supply (+) is provided in the workpiece holding section 166 of the polishing head 163. An object to be processed W (e.g., a substrate, an epitaxially grown film or a film-formed surface, a compound, a ternary mixed crystal, a quaternary mixed crystal, In, Al, Si, C, Ga, , N, O, Zn, or a component containing at least one of Zn and F, and a workpiece such as SiC, GaN, gallium oxide, diamond, or aluminum gallium nitride. Then, an energizable liquid or gas used in the light irradiation catalyst reference etching method is arranged below the workpiece W, and a catalyst pad 155 with which the workpiece W abuts is arranged below the liquid or gas. A cathode is provided between the ultraviolet transmitting members 157 from below the catalyst pad 155. As the cathode, for example, platinum or the like that is resistant to light such as ultraviolet light (UV) necessary for processing a workpiece, or a cathode plated with platinum or gold is used. The size of the cathode line is not particularly limited as long as the diameter is, for example, φ1 to φ0.3 mm and the line is not broken and can transmit light such as ultraviolet (UV) light required for processing. The cathode may be made of a thin film of several μm or the like like a wiring pattern. According to the size of one or a plurality of slit grooves 155a of the catalyst pad 155, a cathode line or a membrane can be appropriately selected. A DC voltage power supply (-) may be electrically connected to the cathode. The head-side DC voltage power supply unit 165 is not particularly limited in parts as long as it is resistant to light, liquid, and gas used in processing and has a low electric resistance value. The specific bias voltage to be used is 2 V to several tens V when the workpiece W is SiC. When the workpiece W itself has resistance, the electrode is ideally brought into contact with the entire back surface of the workpiece W. This is because, when the workpiece W itself has a resistance, the net bias voltage decreases on the processing surface remote from the electrode, and the processing speed decreases.

In the present invention, the rate of oxidation of the surface of the workpiece W is rate-limiting. It is preferable to perform the light irradiation catalyst-based etching method under a condition that satisfies the relationship “the flat processing speed of the surface to be processed ≧ the oxidation speed of the surface to be processed by electric action or light irradiation”. Finishing is performed by blocking, retreating or turning off light effective for processing of the workpiece such as ultraviolet light used in the light irradiation catalyst-based etching method, and then, on the surface of the workpiece W, the surface layer burned by light is subjected to the catalyst-based etching method. It is preferable to remove by finishing processing such as.

Here, in the case of a configuration in which reciprocation is performed with a small amplitude as in the first apparatus example of the light irradiation catalyst-based etching apparatus 100, the movable range is narrow. As shown in FIG. 6, unless the polishing head 163 is provided with a head-side auxiliary electrode 164a, the polishing head 163 in the processing solution should be avoided while the support platen 140 moves with a large swing. Then, an auxiliary electrode (not shown) must be taken in and out of the solution, and plating and electrolytic polishing must be performed, which is difficult as an apparatus configuration. On the other hand, as shown in FIG. 6, the auxiliary electrode is provided on the head-side auxiliary electrode 164a of the polishing head 163. Plating and electrolytic polishing can be performed. When performing either plating or electrolytic polishing, a method in which the workpiece and the catalyst pad are brought into contact with each other and a method in which the height of the catalyst pad from the catalyst surface is adjusted to perform plating or electrolytic polishing can be considered. . At the time of plating or electrolytic polishing using the head-side auxiliary electrode 164a of the polishing head 163, uniform plating can be obtained by performing plating while performing an averaging operation. The shape of the head-side auxiliary electrode 164a (for plating or electrolytic polishing) is formed in a tapered shape at the outer peripheral portion, a gas that inhibits the reaction is released, a groove for stirring a fluid necessary for the reaction is provided, and a polishing head is formed. By increasing the rotation speed, plating or electropolishing can be performed while oxygen or hydrogen generated at the time of plating or electropolishing on the catalyst surface of the catalyst pad is directed toward the outer periphery of the auxiliary electrode portion. If the area of the surface of the catalyst layer is made smaller than the surface of the workpiece W, the position and residence time of the small catalyst pad 155 with respect to the surface of the workpiece W are controlled to reduce the local processing amount on the surface of the workpiece W. Can be controlled. That is, local processing by numerical control can be performed.

(Example of Second Device of Light Irradiation Catalyst-Based Etching Device)
A second example of the light irradiation catalyst-based etching apparatus will be described. FIG. 7 is a perspective view illustrating a second example of the light irradiation catalyst-based etching apparatus 200. FIG. 8 is a perspective view of a second example of the light irradiation catalyst-based etching apparatus 200 as viewed from below. FIG. 9 is a partial cross-sectional view mainly showing the configurations of the support surface plate 210 and the tub container 220 of the second example of the light irradiation catalyst-based etching apparatus 200.

As shown in FIGS. 7 to 9, the light irradiation catalyst reference etching apparatus 200 of the second apparatus example is a state in which the workpiece W as a workpiece and the catalyst layer 230 of the catalyst pad 240 are immersed in a gas atmosphere or liquid. Is a structure for processing a workpiece. The light irradiation catalyst-based etching apparatus 200 includes a support platen 210 (platen), a tub container 220 for holding water 201 as an example of gas and liquid, and a catalyst layer 230 having a catalyst substance on at least the surface thereof. The catalyst pad 240 placed in the tub container 220 and immersed in the water 201 while holding the workpiece W is placed in the tub container 220 in a state of contacting or approaching the catalyst layer 230. The polishing head 260 includes a polishing head 260, a driving mechanism 270 that moves the catalyst pad 240 and the polishing head 260 relative to each other while contacting or approaching the polishing head 260, and a UV lamp 225 (ultraviolet irradiation unit).

Depending on the type of the workpiece (for example, SiC or the like), between the plurality of through holes 221a (see FIG. 9) of the tub 220 through which the ultraviolet light passes and the plurality of through holes 241 (see FIG. 9) of the catalyst pad 240. A cathode, a DC voltage power supply (+) of the polishing head 260, a workpiece holding section for holding the polishing head 260 disposed on the back surface of the workpiece, a workpiece W, and a solution used for processing. A cathode provided between the plurality of through-holes 221a of the vat container 220 through which the ultraviolet light passes and the plurality of through-holes 241 of the catalyst pad 240, and a DC voltage power supply (-) connected to the cathode can be electrically connected. It is good also as a state.

(4) The support platen 210 is formed of a material that is not suitable for transmitting light having a wavelength effective for processing a workpiece. Specifically, as shown in FIGS. 7 and 8, the support surface plate 210 is formed in a disk shape and is made of a material that does not transmit ultraviolet light. The support platen 210 is formed of a metal material, a material having resistance to ultraviolet light and having strength, or a material which has been subjected to a surface treatment resistant to ultraviolet light. For example, the support surface plate 210 is formed of a metal such as SUS (stainless steel) which does not transmit ultraviolet light, a ceramic which does not transmit ultraviolet light, a resin which does not transmit ultraviolet light, or a composite material thereof. In order to make the surface more resistant to ultraviolet light, liquid or gas, the surface is surface-treated with a film formed or plated of platinum group or gold, or a resistant film such as Teflon (registered trademark) coat. It may be. Therefore, the strength of the support platen 210 is ensured as compared with the case where the support platen 210 is entirely made of quartz or the like for transmitting ultraviolet light. It is even more preferable that the support platen 210 is formed of SUS304, SUS316, or the like, which is suitable for use in a clean room and resistant to ultraviolet rays.

(8) The support platen 210 has a plurality of through-hole groups 211 through which the ultraviolet light emitted from the UV lamp 225 passes, as shown in FIG. The plurality of through-hole groups 211 are formed by an aggregate having a circular outer shape formed by the plurality of through-holes 211a (surface plate side through-opening). The plurality of through-holes 211a are formed at positions where ultraviolet light from a UV lamp 225 (described later) disposed below the support platen 210 is transmitted, and are provided from the UV lamp 225 (described below) during a catalyst-based etching operation. Is formed at a position through which the ultraviolet light is transmitted. The plurality of through-hole groups 211 are arranged at predetermined positions radially outward from the center of the support platen 210 and spaced apart in the circumferential direction. The plurality of through holes 211a are arranged such that the three adjacent through holes 211a are located at the vertices of an equilateral triangle when viewing the three adjacent through holes 211a. The plurality of through holes 211a constituting the through hole group 211 have a diameter R of, for example, 5 mm, and an interval L between adjacent through holes 211a is 10 mm.

Below the support platen 210, a UV lamp 225 (ultraviolet irradiation unit) that emits ultraviolet light and is used for catalyst-based etching is disposed.
The upper end of the lower rotation shaft 271 of the drive mechanism 270 is connected to the center of the lower surface of the support surface plate 210. The support platen 210 is rotatable when the lower rotation shaft 271 rotates.
On the upper surface of the support platen 210, a tub container 220 (tub unit) for storing a circular liquid that opens upward is mounted. The tub container 220 is detachable from the support platen 210.

The vat container 220 is open at the top, and is disposed above the support platen 210. The tub container 220 includes a disc-shaped bottom plate 221 having a plurality of through holes 221a (bottom plate side through-opening) through which ultraviolet light passes, and a cylindrical peripheral wall portion 222 rising from the periphery of the bottom plate 221. The tub container 220 is formed in a tub shape capable of holding a processing solution or gas. The tub 220 is made of, for example, a material such as a resin, a metal, a ceramic, or a glass-based metal oxide having a low transmittance of ultraviolet light. The plurality of through-holes 221 a of the tub container 220 are provided at positions corresponding to the plurality of through-holes 211 a formed in the support surface plate 210. In addition, the support platen 210 has a portion through which ultraviolet light from the UV lamp 225 does not transmit, and prevents irradiation of ultraviolet light to a portion that does not want to transmit ultraviolet light, thereby minimizing deterioration of the tub container 220 and the like. Suppress.

An ultraviolet transmitting member 212 is attached to the lower side of the bottom plate 221 of the tub container 220. The ultraviolet transmission member 212 is a transmission member that can transmit ultraviolet light from the UV lamp 225 disposed below the support platen 210. In the present embodiment, the ultraviolet transmitting member 212 is made of, for example, quartz.

The processing solution is stored in the vat container 220. In the second example of the light irradiation catalyst reference etching apparatus 200 of the present embodiment, for example, water is used as a processing solution, so that hydrolysis is caused on the processing surface of the workpiece. When performing catalyst-based etching by causing hydrolysis, with the processing solution interposed between the processing surface of the processing object and the catalyst, while contacting the processing object with the catalyst immersed in the processing solution, The relative movement generates a decomposition product by a hydrolysis reaction on the processing surface of the workpiece. Then, the processing surface of the workpiece is processed by dissolving the decomposition product into the processing solution.

Here, if a hydrofluoric acid aqueous solution is used as the processing solution, if the ultraviolet transmitting member 212 described later is made of, for example, quartz, the hydrofluoric acid aqueous solution dissolves the quartz. Therefore, in the case of using the ultraviolet transmitting member 212 made of quartz in the light irradiation catalyst reference etching apparatus 200 that irradiates ultraviolet light, a hydrofluoric acid aqueous solution cannot be used as a processing solution. Therefore, in this embodiment, water is used as the processing solution.

Since the aqueous solution of hydrofluoric acid does not dissolve the sapphire glass, the ultraviolet transmitting member 212 may be made of, for example, sapphire glass, and the aqueous solution of hydrofluoric acid may be used as the processing solution. However, when the ultraviolet transmitting member 212 is made of sapphire glass, sapphire glass does not transmit ultraviolet light of a specific short wavelength as compared with quartz, so that if the wavelength is too short, it may not be possible to cope with ultraviolet light. Therefore, it is necessary to use a UV lamp 225 that emits light having a wavelength that can be transmitted.

The ultraviolet transmitting member 212 is attached to the lower surface of the bottom plate 221 of the container 220 so as to cover the plurality of through holes 221 a (the bottom plate side through-opening) of the bottom plate 221 of the container 220. In a state where the ultraviolet ray transmitting member 212 is arranged below the bottom plate 221 of the tub 220, the periphery of the ultraviolet ray transmitting member 212 is subjected to a water stopping process in a water stopping section 212a. As a result, the ultraviolet transmitting member 212 is attached to the bottom plate 221 in the water stop processing section 212a in a state where the water stop processing has been performed.

Here, regarding the arrangement of the water stopping section 212a, the plurality of through holes 221a of the support platen 210 are provided in portions of the ultraviolet transmitting member 212 that do not correspond to the water stopping section 212a. That is, the water stop processing unit 212a is arranged at a position where the ultraviolet light from the UV lamp 225 does not reach. Therefore, it is possible to suppress the deterioration caused by the ultraviolet light emitted from the UV lamp 225 in the water stop processing unit 212a.

As shown in FIG. 9, a catalyst pad 240 as an example of a pad portion having a catalyst layer 230 formed with a predetermined thickness by sputtering or the like is provided on the entire upper surface of the bottom plate 221 of the tub container 220, as shown in FIG. I have. The catalyst pad 240 has a catalyst layer 230 for flattening the surface of the workpiece W by catalyst-based etching. The catalyst pad 240 is disposed above the bottom plate 221 in the tub 220. A plurality of through holes 241 are formed in the catalyst pad 240.

The plurality of through holes 241 formed in the catalyst pad 240 are provided at positions corresponding to the plurality of through holes 221a formed in the tub container 220 and the plurality of through holes 211a formed in the support platen 210. That is, the plurality of through-holes 221a formed in the tub 220, the plurality of through-holes 211a formed in the support platen 210, and the plurality of through-holes 241 formed in the catalyst pad 240 continuously penetrate vertically. It is configured to be able to transmit ultraviolet light from the UV lamp 225. It is preferable that the catalyst pad 240 has resistance to a water component or an oxygen component of 90 degrees or less. The through holes 241 do not need to be all the same in size, pitch, and the like, and do not need to be continuously provided. For example, when it is difficult to remove the support surface plate 210, the plurality of through holes 241 formed in the catalyst pad 240 may be formed according to the shape of the workpiece according to the processing operation. It may be used after being optimized and attached to a support platen 210 provided with a plurality of through holes 211a whose dimensions and pitch are adjusted. For example, when it is desired to transmit only part of the ultraviolet light (UV), the through hole 241 of the catalyst pad 240 may be optimized. The same applies to the plurality of through holes 221a formed in the tub container 220.

(4) As a material of the catalyst pad 240, a rubber, resin, ceramics, glass, metal, or the like having resistance to a processing solution or gas is used. A transition metal such as Pt can be used as the catalyst. When metal is laminated on the catalyst, metal bonding is desirable. Examples of the metal include chromium, gold, and platinum. Here, the tub container 220 may store gas.

As shown in FIG. 7, an upper rotation shaft 272 of the drive mechanism 270 is provided vertically above the trough container 220. The upper rotation shaft 272 is arranged on the upper side of the tub container 220 at a position radially offset from the center of the bottom plate 221 of the tub container 220. The upper rotation shaft 272 is rotatably held in a vertical posture with respect to the sleeve 261 as shown in FIG. The upper rotation shaft 272 is rotated by a driving motor 273 as first driving means. The sleeve 261 is moved up and down by a drive part 274 such as a drive cylinder or a ball screw as a second drive means. In response, the upper rotation shaft 272 is moved forward and backward so as to move closer to or away from the catalyst pad 240. Moved in the direction. A polishing head 260 is provided at a lower end of the upper rotation shaft 272. The workpiece W is held on the lower surface of the polishing head 260. The polishing head 260 is configured to be able to hold the workpiece W, and also functions as a holder as first holding means.

Next, operation control of the polishing head 260 will be described. FIG. 10 is a diagram illustrating a control in which the operation of the catalyst-based etching is started after the workpiece W held by the polishing head 260 comes into contact with or approaches the surface of the catalyst pad 240.

The upper rotation shaft 272 and the polishing head 260 are connected by the tilt movable mechanism 262 as shown in FIG. The tilt movable mechanism 262 is movable in a range including a state where the surface of the catalyst pad 240 and the surface of the workpiece W are parallel, and a state where the surface of the catalyst pad 240 and the surface of the workpiece W are not parallel. As a result, at least one of the catalyst pad 240 and the workpiece W can be tilted. In the present embodiment, since the tilt movable mechanism 262 can tilt the polishing head 260 with respect to the horizontal direction within a range of 360 °, the workpiece W can be tilted with respect to the horizontal direction within a range of 360 °. It is possible to tilt.

In the surface direction of the surface of the catalyst pad 240 or the surface of the workpiece W, for example, the difference H between both end portions on the surface of the catalyst pad 240 or the surface of the workpiece W is 0.01 mm or more. It is possible to tilt at least one of the catalyst pad 240 and the workpiece W to a certain extent. The tilt movable mechanism unit 262 is, for example, at least one of the catalyst pad 240 and the workpiece W such that the tilt angle α of the surface of the workpiece W with respect to the surface of the catalyst pad 240 is relatively 0.03 degrees or more. Can be tilted. Thus, the surface of the workpiece W and the surface of the catalyst pad 240 can be made to follow the tilt movable mechanism 262. Therefore, when the surface of the workpiece W abuts or approaches the surface of the catalyst pad 240, the surface followability of the workpiece W can be improved. The catalyst pad 240 is provided with a catalyst layer for removing only a portion in contact with or close to the surface of the workpiece W by catalyst-based etching (catalyst-based reaction).

When performing the flattening process required for the catalyst-based etching, as shown in FIG. 10, the rotation of the upper rotation shaft 272 is stopped and the lower rotation shaft 271 (see FIG. 7) is stopped and supported. With the surface plate 210 stopped, the upper rotating shaft 272 is lowered by lowering the sleeve 261 by the driving part 274 as the second driving means, and the surface of the workpiece W is placed on the surface of the catalyst pad 240. Contact or approach so that the film does not peel off. After that, the upper rotation shaft 272 and the lower rotation shaft 271 are rotated by the drive motor 273 as the first drive means to rotate the support platen 210, so that catalyst-based etching (catalyst-based reaction) is performed. The necessary flattening process is executed by a flattening process execution unit (not shown). Thus, in a state where the catalyst pad 240 is stopped, the surface of the workpiece W can be brought into contact with or close to the surface of the catalyst pad 240 so that the catalyst film is not peeled off. Peeling of the catalyst layer is suppressed. Therefore, since the peeling of the catalyst layer on the surface of the catalyst pad 240 can be suppressed, the processing quality of the workpiece W can be improved.

Conventionally, for example, when the surface of the workpiece W is brought into contact with or close to the surface of the catalyst pad 240 while the surface of the workpiece W is processed by the main processing operation, the workpiece W and the catalyst pad 240 are processed. The end of the workpiece W comes into contact with the catalyst pad 240 due to the influence of the inclination angle of the workpiece W, and the catalyst portion of the catalyst pad 240 hit by the end of the workpiece W Depending on the state of the chamfer, as shown in FIG.
As a countermeasure, the upper surface of the workpiece W required for processing is brought into contact with or close to the surface of the catalyst pad 240, and then the upper rotation shaft 272 is rotated by the drive motor 273 as the first drive means. By performing the main processing operation of rotating the support platen 210 by rotating the lower rotation shaft 271, processing in which the catalyst of the catalyst pad 240 does not peel off can be performed as compared with the related art.

(4) The risk of the catalyst layer 230 peeling off during mass production can be physically suppressed. If the workpiece W is attached to the surface of the catalyst pad 240 from which the catalyst layer 230 has been peeled off by the water sticking phenomenon during the processing of the catalyst reference etching, if the material of the catalyst pad 240 is, for example, rubber, the processing is performed. The water sticking phenomenon between the workpiece W and the catalyst pad 240 and the gripping force generated between the workpiece W and the catalyst pad 240 between the polishing pad 260 holding the workpiece W and the workpiece. There is a risk that the workpiece W may fly away to the outer peripheral portion and be damaged by the processing operation of the catalyst-based etching apparatus 200. However, if the catalyst layer 230 does not peel off, the risk can be reduced.

Normally, the surface of the workpiece W is brought into contact with or close to the catalyst pad 240 while the surface of the workpiece W is being processed by the main processing operation. The possibility that the workpiece W sticks to the catalyst pad 240 due to the water sticking phenomenon is theoretically lower than the case where the working operation is performed after the contact is made. The risk that the workpiece W stuck to the catalyst pad 240 comes off from the retainer (holding portion) of the polishing head 260 and is damaged may be caused by applying the surface of the workpiece W to the catalyst pad 240 while performing the processing in the main processing operation. The contact or proximity is preferable because the dynamic frictional resistance is generated between the workpiece and the pad, and is lower than the static frictional force. However, according to the present invention, the catalyst on the catalyst pad 240 is prevented from peeling off by performing the processing operation after the surface of the workpiece W is brought into contact with the catalyst pad 240. Peeling off the catalyst from the catalyst pad is a particular problem in catalyst-based etching.

In addition, the processing operation of the main processing performed on the surface of the workpiece W is the minimum operation necessary for achieving the polishing processing.
In the present embodiment, for example, the processing operation of the main processing is an operation that mainly determines the processing rate, and in the case of the catalyst-based etching apparatus of FIG. In an atmosphere, in a state where the workpiece W and the catalyst pad 240 are in contact with or close to each other, the upper rotation shaft 272 is rotated by the drive motor 273 as the first drive unit, and the lower rotation shaft 271 is This is an operation of rotating the support platen 210 by rotating it. On the other hand, the machining operation of the sub machining is a machining operation in a swing operation. The processing operation of the sub-processing is to perform averaging together with the processing operation of the main processing, so that the PV value (Peak to Valley: maximum error) and the RMS value (Root Mean Square: root mean square) of the processing surface of the workpiece W are obtained. (Square root). The processing operation of the main processing is a processing operation in which the minimum required processing in the catalyst-based etching is realized only by the processing operation of the main processing, without the processing operation of the sub-processing.

In the light irradiation catalyst reference etching apparatus 200 configured as described above, the catalyst pad 240 is a disk-shaped rotating platen, and the polishing head 260 and the catalyst holding the workpiece W having an area smaller than the platen. The pad 240 is rotated at a predetermined speed on rotation axes that are parallel and eccentric to each other. The polishing head 260 can adjust the contact pressure of the workpiece W with respect to the catalyst layer 230 of the catalyst pad 240 by adjusting the load. Further, it is preferable that at least one of the catalyst pad 240, the platen, the tub, the fluid unit, and the polishing head 260 has a temperature control function, because the processing temperature can be maintained at a predetermined temperature. For example, when the workpiece W is made of SiC, the processing is performed at a temperature of 70 degrees in the catalyst-based etching using water (also referred to as water CARE), so that the processing rate is higher than when processing using water at normal temperature. Is improved. If the area of the surface of the catalyst layer 230 is smaller than that of the surface of the workpiece W, the position and the residence time of the small catalyst pad 240 with respect to the surface of the workpiece W are controlled, and the surface of the workpiece W is controlled. The local processing amount can be controlled, that is, local processing can be performed by numerical control.

The photoirradiation catalyst-based etching apparatus 200 of the second apparatus example is configured such that water molecules are dissociated, adsorb and cut back bonds between an oxygen element constituting a solid oxide film and other elements, and a decomposition product by hydrolysis is converted into water. The elution is performed to process the surface of the workpiece W. Further, a water circulation system 290 is provided to purify the water 201 in the tub container 220 and keep the water level constant. The water circulation system 290 includes a supply pipe 291, a drain pipe 292, a processing liquid purifier (not shown), a buffer tank, a pump, a waste liquid section, and the like.

[Cleaning device]
Next, a cleaning device capable of executing the cleaning performed by the first cleaning unit 13 and the second cleaning unit 17 in FIG. 1 will be described.
The cleaning device can be realized by changing the catalyst in the basic configuration of the light irradiation catalyst reference etching devices 100 and 200. For example, a cleaning device that removes Pt attached to a workpiece can be realized by performing etching using Ni as a catalyst instead of performing etching using Pt as a catalyst in the light irradiation catalyst-based etching devices 100 and 200. In this case, Pt is removed from the surface of the workpiece. Ni adheres to the surface of the workpiece from which Pt has been removed.

The device that performs the processing performed by the latent scratch removing unit 12 and the device that performs the process performed by the first cleaning unit 13 may be configured by the same device or by different devices. Is also good. Similarly, the apparatus for performing the processing performed by the above-described surface finishing means 16 and the apparatus for performing the processing performed by the second cleaning means 17 may be constituted by the same apparatus or may be constituted by different apparatuses. May be. In this case, even if the catalyst is changed by introducing the cleaning liquid into the tub containers 150 and 220 after performing the catalyst-based etching process in the light irradiation catalyst-based etching apparatuses 100 and 200, the catalyst may be changed. Good.

(Modifications of Light Irradiation Catalyst Reference Etching Apparatus and Workpiece Processing System)
The above-described light irradiation catalyst-based etching apparatus may have the following configuration in addition to the configuration of the light irradiation catalyst-based etching apparatuses 100 and 200. The workpiece processing system 10 may also have the following configuration. It should be noted that the contents described below include some contents that are the same as the contents described above.

For example, a photocatalyst based etching apparatus uses a chemical-resistant workpiece storage cassette and a case when cleaning contaminants that adhere to the cassette (preferably, since the cleaning method is easily established, the cassette and the case are made of one material, and are submerged in water. When transporting by means of an air vent on the case ceiling), a cassette mounting part used in the process of the catalyst-based etching method, a suction type handling part to prevent the workpiece from drying before cleaning, and a UV lamp Surveillance camera to prevent UV light from entering the eyes directly, monitor to prevent UV light from the UV lamp from entering the eyes directly, workpiece holder, catalyst pad holder, head Auxiliary electrode for plating and electropolishing, a polishing head with an auxiliary electrode for plating and electropolishing, and an energizable polishing head for UV lamps It may be.

Further, the light irradiation catalyst-based etching apparatus includes a workpiece holding unit configured to hold a workpiece (eg, a substrate), a catalyst pad holding unit configured to hold a catalyst pad, and a processing unit. A drive unit configured to relatively move the workpiece holding unit and the catalyst pad holding unit in a state where the processing area of the workpiece and the catalyst are in contact with each other may be provided. The catalyst pad holding section may include an elastic member for holding the catalyst pad. The catalyst pad holding section has a plurality of grooves and holes configured to allow the processing liquid to move between the catalyst pad holding section and the work piece when the catalyst pad and the work piece are in contact with each other. May be.

The photoirradiation catalyst-based etching apparatus may further include a treatment liquid temperature adjustment unit that adjusts the temperature of the treatment liquid to a predetermined temperature within a range of 10 degrees or more and 90 degrees or less. By adjusting the temperature of the processing liquid, a processing rate of a workpiece such as an oxide or SiC can be improved, and catalyst poison such as a Si component can be removed. Further, the catalyst-based etching apparatus may include a processing liquid supply unit having a supply port for supplying the processing liquid onto the processing target region of the workpiece. The processing liquid supply unit may be configured such that the supply port moves together with the catalyst holding unit.

The light irradiation catalyst reference etching apparatus may include an electrolytic regeneration unit configured to remove an etching product on the catalyst surface by using an electrolytic action. The electrolytic regeneration section has an electrode configured to be electrically connectable to the catalyst, and by applying a voltage between the catalyst and the electrode, an etching product attached to the surface of the catalyst is subjected to electrolytic action. It may be configured to remove.

The light irradiation catalyst-based etching apparatus may include a plating regeneration unit configured to regenerate the catalyst. The plating regenerating section has an electrode configured to be electrically connectable to the catalyst. The plating regenerating section is configured to immerse the catalyst in a nickel salt solution such as nickel sulfate (hydrate). The surface of the catalyst may be regenerated by applying a voltage to the catalyst. Alternatively, the catalyst may be used while chemically dissolving the surface. The catalyst may be brought into a positive potential state with respect to the processing liquid to dissolve the transition metal film on the processing surface.

Further, the light irradiation catalyst-based etching apparatus is a monitoring unit that monitors the etching processing state of the processing target area of the processing target, at least in the processing conditions of the processing target being processed based on the etching processing state obtained by the monitoring unit A control unit configured to control one parameter, or a potential adjustment unit having a reference electrode, wherein the catalyst and the reference electrode are electrochemically connected to each other via a treatment liquid, and the potential of the surface of the catalyst is adjusted. It may include a potential adjustment unit configured to control. The monitoring unit includes a torque current monitoring unit that monitors an etching process state based on a torque current of the driving unit when the catalyst holding unit and the workpiece holding unit relatively move, and a monitoring unit that processes the workpiece. Light is directed toward the region, and the reflected light reflected on the surface of the processed region of the workpiece or reflected after transmitting through the workpiece is received, and the etching process state is determined based on the received light. An optical monitoring unit for monitoring may be provided.

In addition, the light irradiation catalyst-based etching apparatus is configured to supply a treatment liquid through a catalyst cleaning nozzle or a catalyst holding unit configured to supply water and / or a chemical solution for cleaning the surface of the catalyst to the surface of the catalyst. A processing liquid supply unit having a supply port for supplying the processing object onto the processing area may be provided.

Further, the workpiece processing system may include a workpiece cleaning unit configured to clean the workpiece, and a workpiece transport unit that transports the workpiece.
Further, the workpiece processing system, the workpiece measuring unit configured to measure the surface state, thickness or weight of the processing area of the workpiece after processing by the workpiece processing apparatus, A reprocessing control unit configured to reprocess the workpiece after being processed by the workpiece processing apparatus when a measurement result of the workpiece measurement unit does not satisfy a predetermined standard. Is also good. Further, the workpiece transfer section may be configured to be able to separately transport the workpiece in a wet state and the workpiece in a dry state.

The workpiece processing system may further include a film forming apparatus configured to perform a film forming process on the workpiece. The film forming apparatus may include at least one of a chemical vapor deposition (CVD) apparatus, a sputtering apparatus, a plating apparatus, and a coater apparatus.

In the above embodiment, the method of cleaning the workpiece is to remove the harmful substances attached to the surface of the workpiece after performing the catalyst-based etching process. However, the present invention is not limited to this. The harmful substances adhered to the surface may not be those adhered in the catalyst-based etching process. In other words, the method of cleaning the workpiece can be applied to a case where the harmful substances attached to the surface of the workpiece are removed after the catalyst-based etching is not performed. For example, by using a method for cleaning a workpiece, a component adhered to the surface of the workpiece that can be observed by measurement using a total reflection X-ray fluorescence spectrometer (for example, manufactured by Rigaku Corporation) is reduced. Is possible. According to the present invention, there is no need to worry about surface roughness due to cleaning, and the surface roughness Ra is maintained, as compared with a case where cleaning is performed by directly dissolving with a strong acid or alkali chemical in relation to a workpiece or a deposit. And can be improved. Cleaning can be performed while maintaining or improving the surface roughness Ra or the like. Further, in the method of cleaning a workpiece, cleaning can be performed without causing latent scratches.

Further, for example, in the above-described embodiment, in the first example of the light irradiation catalyst-based etching apparatus 100 shown in FIG. 2 or the first example of the light irradiation catalyst-based etching apparatus 100 shown in FIG. In the cleaning device realized by changing the above, the pair of support platens 140 are configured to reciprocate in opposite phases on the same straight line, but the present invention is not limited to this. For example, the pair of support bases 140 may be configured to reciprocate in opposite phases in an oval range in plan view. This makes it possible to increase the range of movement as compared with the case where the pair of support platens 140 are reciprocated on the same straight line in opposite phases, so that the range of processing the surface of the workpiece can be increased. it can.

Further, for example, in the above embodiment, the tub containers 150 and 220 (tub portions) are provided, and the tub containers 150 and 220 (tub portions) are raised from the peripheral edges of the bottom plates 151 and 221 and the bottom plates 151 and 221. , 222, but is not limited thereto. Instead of providing the tub containers 150 and 220 (tub units), peripheral walls may be provided on the support plattens 140 and 210 (platen). In this case, the ultraviolet transmitting members 157 and 212 (light transmitting members) may be arranged on the supporting surface plates 140 and 210 (surface plates).

桶 Also, the shape of the trough may be a trough capable of storing at least one of a liquid and a gas. The shape of the tub portion may be a shape that opens upward like the tub containers 150 and 220 of the above embodiment, or may be a closed shape. In the case where the upper part is open, the liquid or gas used for processing may be used in a lateral direction or an upside-down direction. In this case, the upper part where the trough is opened may be lateral or downward.

According to the catalyst-based etching apparatus of the present embodiment as described above, the following effects can be obtained.

(1) In the catalyst-based etching apparatus 200, a catalyst pad 240 provided with a catalyst layer for removing only a portion of the workpiece to be brought into contact with or in proximity to the surface of the workpiece by catalyst-based etching, and a catalyst pad for removing the surface of the workpiece. And 240. A flattening process execution unit that executes a flattening process (surface forming process operation) necessary for removal by a contact reaction after the catalyst film abuts or approaches the surface of 240 so as not to peel off. . Accordingly, the surface of the workpiece W can be brought into contact with or close to the surface of the catalyst pad 240 in a state where the catalyst pad 240 is stopped, so that the catalyst layer formed on the surface of the catalyst pad 240 may be peeled off. Is suppressed. Therefore, the catalyst layer on the surface of the catalyst pad 240 can be prevented from peeling off, so that the processing quality of the workpiece W can be improved.

Especially, the problem of film peeling is affected during mass production in which workpieces are automatically processed. In catalyst-based etching, a catalytic reaction occurs where a catalyst is present. However, if the surface of the workpiece is to be removed evenly over the entire surface, such as an epitaxial film, and if the catalyst film is peeled off without being noticed, processing unevenness occurs without processing only the part where the catalyst film is peeled off. appear. Then, quality assurance cannot be assured, or when it is not known when film peeling has occurred at the time of processing a workpiece continuously during mass production, a large number of defective products may be generated. If the surface of the workpiece becomes uneven, in the case of the processing operation performed by the catalyst-based etching apparatus 200, since the processing is performed using the averaging operation, unless the processing tank is stored in chronological order by monitoring the camera, It is impossible to estimate when the film has come off. According to the present invention, such a risk can be reduced. Further, during the processing of the catalyst-based etching, when the workpiece W is stuck to the surface of the catalyst pad 240 from which the catalyst layer 230 has been peeled off by a water sticking phenomenon, when the material of the catalyst pad 240 is, for example, rubber, The water sticking phenomenon between the workpiece W and the catalyst pad 240 and the grip force generated between the workpiece W and the rubber that has been exposed by the peeling of the catalyst layer 230 of the catalyst pad 240 cause the workpiece to be processed. The workpiece W is detached from the polishing head 260 holding the workpiece W, and there is a risk that the workpiece W may fly to the outer peripheral portion and be damaged by the processing operation of the catalyst-based etching apparatus 200. However, if the catalyst layer 230 does not peel off, the risk can be reduced.

(2) In addition, it is possible to move in a range including a state where the surface of the catalyst pad 240 and the surface of the workpiece are parallel and a state where the surface of the catalyst pad 240 and the surface of the workpiece are not parallel. A tilt movable mechanism 262 capable of tilting at least one of the catalyst pad 240 and the workpiece is provided. The tilt movable mechanism 262 allows the surface of the workpiece W and the surface of the catalyst pad 240 to follow, thereby changing the angle of the catalyst pad 240 or the surface of the workpiece. Therefore, when the surface of the workpiece W abuts or approaches the surface of the catalyst pad 240, the followability of the surface of the workpiece W can be improved.

The light irradiation catalyst-based etching apparatus 200 according to the present invention is not limited to the above-described embodiment, and can be appropriately changed.
For example, in the above-described embodiment, the flattening process execution unit that executes the flattening process by the catalyst-based etching is provided, but is not limited thereto. A process execution unit that executes a process in catalyst-based cleaning (catalyst-based reaction) may be provided. When the process is performed in the catalyst-based cleaning, the process performed by the process execution unit may be a main operation necessary for establishing the catalyst-based cleaning.

Further, from another viewpoint, the present disclosure can be applied to a method and an apparatus for processing a workpiece.
2. Description of the Related Art Conventionally, in the field of manufacturing semiconductor devices, various methods for polishing or polishing (polishing) the surfaces of various substrates including a workpiece such as a Si substrate (wafer) with high quality have been provided. Typically, there is CMP (Chemical Mechanical Polishing) for polishing the surface of a workpiece (such as a substrate) using an abrasive (abrasive grains) (see, for example, Patent Document 1 (Japanese Patent Application Laid-Open No. 2012-238824)). ).

CMP increases the mechanical polishing (surface removal) effect due to the relative movement between the polishing agent and the object to be polished by the surface chemical action of the polishing agent (abrasive grains) itself or the action of a chemical component contained in the polishing liquid. This is a technique for obtaining a smooth polished surface. On the other hand, when a workpiece such as a substrate is made of a material such as SiC or GaN, it has attracted attention as a material having less switching loss than Si and a material corresponding to a high temperature. Since SiC and GaN are harder than Si, in CMP, for example, hard diamond abrasive grains are used as an abrasive (abrasive grains). When diamond abrasive grains or the like are used, damage at the atomic level may be formed below the surface of the workpiece, which is called latent scratch. Latent scratches caused by polishing using abrasive grains do not exhibit the original performance of the workpiece when the workpiece is used as a device, and lead to poor electrical characteristics and low strength.

On the other hand, in recent years, a catalyst-based etching method based on a catalyst-based surface has been proposed as a technique for processing a difficult-to-process material such as SiC or a solid oxide film such as an optical glass without causing latent scratches ( For example, see Patent Document 2 (Japanese Patent Application Laid-Open No. 2006-114632).

The catalyst-based etching method described in Patent Literature 2 is a processing technique that does not use an abrasive or abrasive grains at all, and is an ideal processing method that does not cause latent scratches such as scratches and a damaged layer on a processing surface by processing. is there. However, the catalyst-based etching method is a technology that uses a catalyst to process only the portion of the surface of the workpiece that is in contact with the workpiece and the liquid or gas at the atomic level, so that the polishing using abrasive grains is performed. Requires more processing time than processing.

Regarding the surface processing technology for flattening the surface of the workpiece, polishing using abrasive grains has the advantage that the processing time is shorter than that of the catalyst-based etching method. May cause scratches. Latent scratches formed on the workpiece cause the original performance of the workpiece not to be exhibited when the workpiece is used as a device, resulting in poor electrical characteristics or reduced strength. Preferably not present in the product. It is desirable to reduce the finishing time, to eliminate latent scratches by some means as much as possible, and to finish the surface of the workpiece as flat as required by the device.

The present invention relates to a surface processing technology for flattening the surface of a workpiece, in order to solve the above-mentioned problems, to shorten the finish processing time, reduce latent scratches to zero as much as possible, and apply a device to the surface of the workpiece with a device. It is an object of the present invention to provide a processing method and a processing apparatus for a workpiece which can be finished to a required flatness.

The following means are available to solve the above problems.
<1>
Latent scratches formed on the workpiece by the surface treatment are reduced to at least 30% or less by a chemical reaction without using abrasive grains or a surface treatment using ultraviolet light before finishing the workpiece. A latent wound removing step for removing,
A surface finishing step of finishing the surface of the workpiece after the latent scratch removing step.
<2>
The surface treatment using a chemical reaction not using the abrasive grains in the latent scratch removal step is performed while performing chemical etching or chemical polishing without using the abrasive grains, a process by an electric action or a process of irradiating ultraviolet light. The method for processing a workpiece according to <1>.
<3>
The ultraviolet light is an LED lamp that emits light having an ultraviolet light wavelength,
The processing method according to <1> or <2>, wherein heat generated from the LED lamp is used in the latent scratch removing step or the surface finishing step.
<4>
The workpiece according to <3>, wherein heat generated from the LED lamp is used as heat necessary for catalyst-based etching when processing is performed by catalyst-based etching in the latent scratch removing step or the surface finishing step. Processing method.
<5>
A processing apparatus for performing the latent scratch removing step and the surface finishing step according to any one of <1> to <4>.
<6>
A substance used in the processing apparatus according to <5>, at least one of a liquid, a gas, a light transmitting section, a light absorbing section, a light reflecting section, an electrode, and an ultraviolet irradiation section.
<7>
A workpiece that has been subjected to the latent scratch removal process in the latent scratch removal step according to any one of <1> to <4>.

According to the method for processing a workpiece of the present embodiment as described above, the following effects can be obtained.

(1) Regarding the processing method of the workpiece, at least 30 latent scratches formed on the workpiece by the surface treatment are subjected to a surface treatment using a chemical reaction without using abrasive grains before the finish processing of the substrate to be processed. %, And a surface finishing step of finishing the surface of the workpiece after the latent scratch removing step.

In this way, the surface treatment using a chemical reaction without using abrasive grains removes latent scratches from the workpiece in advance before finishing, so that no new latent scratch is formed. Just finishing the surface will improve. Conventionally, surface finishing has been performed while removing latent scratches from the state where latent scratches exist.
In addition, after the processing time is reduced by mechanical polishing such as CMP to polish the surface of the substrate as a workpiece, the latent scratch formed by mechanical polishing is removed in the latent scratch removal step. Can be removed from the surface. Therefore, it is possible to ensure that the surface of the substrate to be processed is subjected to the catalyst-based etching by the finishing process without causing any latent scratches on the substrate to be processed. Even in the case of performing the finish processing by CMP, the risk of newly generating a latent scratch can be minimized by shortening the finish processing time, because the existing latent scratch does not need to be removed.
Therefore, since the surface is finished after reducing the latent scratches to at least 30% or less before the finish processing, the risk of generating latent scratches in the finish processing is reduced, and the finish processing time is reduced without causing the workpiece to have latent scratches. In addition to being able to be shortened, latent scratches can be reduced to zero, and the surface of the workpiece can be finished as flat as required by the device. In addition, the surface of the workpiece can be easily processed at low cost.

For example, in the case of the present invention, if the number of latent scratches is reduced to zero in the latent scratch removal step of the present invention before the finish processing, the finish processing does not require the removal of latent scratches, so the formation of the surface is minimized. Processing is sufficient. When the finishing process is performed by the catalyst-based etching, if there are no latent scratches in the pre-processing, no latent scratches occur even in the finishing process. It is possible to finish. When the finishing process is CMP, it is a process of increasing the number of latent scratches from zero in the state of latent scratches. In the present invention, when the finishing process is CMP, it is sufficient that the finishing CMP is performed only for a short time until the surface is formed. Therefore, the risk that a new latent scratch is generated in the finishing process can be reduced as compared with the related art.

As in the past, for example, in a process of forming a surface from a state where several hundreds of latent scratches exist on the surface of a workpiece and aiming the latent scratch at least to 0 (zero), conventionally, a process of about 100 nm is used. When an attempt is made to remove latent scratches by the thickness of the surface, it is necessary to remove the entire surface because the finishing rate tends to be low. At this time, if the finishing is performed by CMP using abrasive grains, conventionally, only a thickness of about 100 nm must be removed by finishing. If the finishing is performed by CMP using abrasive grains, there is always a risk of generating new latent scratches until a thickness of about 100 nm can be removed from the surface before processing. Further, as in the conventional case, for example, in the case of processing in which a surface is formed from a state where several hundred latent scratches exist on the surface of the workpiece and the latent scratch is directed to 0 (zero) as much as possible, Depending on the processing method and the shape of the workpiece, there is no guarantee that the entire surface can be uniformly removed by 100 nm. For this reason, if the conventional method cannot uniformly remove the latent flaw from the surface of the workpiece, there is a possibility that the latent flaw generated before processing is left behind. According to the present invention, the problem can be improved by removing latent scratches in advance. As a supplement, in the description of the conventional technology, the depth at which the latent scratch exists is described as about 100 nm, but the depth at which the latent scratch remains is determined by the processing method and conditions performed up to the step before the finishing step. Depends on. Therefore, the depth at which the latent scratch is present is not always about 100 nm.

例 え ば Further, for example, when the workpiece is SiC or GaN, SiC or GaN is a crystal in which atoms are regularly arranged. Thus, the presence of a latent flaw is the same as breaking a crystal on the surface of the workpiece. As a result, a leakage current is generated from the latent scratch, which has a fatal effect on reliability and performance. In such a case, according to the present invention, the problem can be improved by removing the latent scratch in advance.

(2) The surface treatment using a chemical reaction without using abrasive grains in the latent scratch removal step is preferably performed while performing a treatment by an electric action or a treatment of irradiating ultraviolet light. Therefore, the speed of the catalytic reaction can be increased, and the speed of the surface treatment of the workpiece can be improved. Therefore, the time for removing the latent scratch from the workpiece can be reduced.

As an example of the latent scratch removal step, the SiC surface (including holes and grooves on the surface) is made of quartz lens (SiO ₂ ) by irradiating the workpiece SiC with UV light (ultraviolet light) and using electricity. It can be. In this state, by performing chemical polishing or chemical etching without using abrasive grains to dissolve SiO ₂ by a chemical reaction, latent scratches on the SiC surface can be removed. In this method, before finishing, the latent scratch is first removed from the surface of the workpiece to be machined so as to reduce at least 30% or less, preferably 10% or less, more preferably 0%.

The means for removing latent scratches by irradiating this UV light (ultraviolet light) is described as not using abrasive grains, but there are exceptions.
A slurry containing abrasive grains that do not cause latent scratches in SiO ₂ does not cause latent scratches in the workpiece SiC. Therefore, a slurry containing abrasive grains that do not generate latent scratches in SiO ₂ can be used in the latent scratch removing step of the present invention. Specifically, a slurry containing abrasive grains that do not generate latent scratches in SiO ₂ is not used in conventional SiC processing because a processing rate cannot be expected by ordinary CMP on the surface of the workpiece SiC. However, in the present invention, since the SiC surface is processed while irradiating UV light to form SiO ₂ , a slurry containing abrasive grains that do not generate latent scratches can be used for SiO ₂ . Incidentally, an example of the slurry abrasive does not generate a latent scratches on SiO ₂ particle enters is a slurry used in polishing the SiO ₂ in the finishing of the quartz lens (SiO _2). As another example, there is a slurry containing abrasive grains that do not cause latent damage on gallium oxide when processing GaN. In the present invention, since the processing is performed while irradiating the GaN surface with UV light to make the surface oxidized gallium, it is possible to use a slurry containing abrasive grains that do not cause latent scratches on gallium oxide when processing GaN. is there.
In other words, a slurry containing abrasive grains capable of finishing the surface state after irradiation with UV light without generating latent scratches can be used exceptionally well in the latent scratch removal of the present invention.
More specifically, a slurry containing abrasive grains that does not have a processing rate that can finish the surface state after irradiation with UV light without generating latent scratches can be used exceptionally well in removing latent scratches of the present invention It is.

Additionally, when it is difficult to use the slurry containing abrasive grains in combination with UV light (ultraviolet light) due to the use conditions of the slurry, for example, a processing reaction occurs. In the case where the slurry cannot be transmitted because the slurry is turbid, for example, a processing starting point is provided on the surface of the workpiece with water, ultraviolet rays (UV) and electricity, and the liquid is drained. Polishing with a slurry containing particles stops the slurry and removes it from the processing tank. Again, a processing starting point is provided on the surface of the workpiece with water, ultraviolet rays (UV), and electricity, and then the workpiece is polished with a slurry. These may be repeated. Further, the process of irradiating the workpiece with UV and the process of polishing the workpiece may be repeated, and the processing of the workpiece performed by reciprocating in a processing tank different from the process of polishing the workpiece.

The light irradiation catalyst-based etching apparatus 100 according to the present invention is not limited to the above-described embodiment, and can be appropriately changed.

Further, from another viewpoint, the present disclosure can be applied to a method and a device for cleaning a workpiece.
Conventionally, a method of cleaning platinum adhered to a workpiece (eg, a substrate) with aqua regia has been known (for example, see Patent Document 1 (Japanese Patent Application Laid-Open No. 2012-64972)). When a process of flatly removing the surface of a workpiece such as a Si substrate (wafer) (a process using a catalyst-based etching method) is performed, for example, when platinum is used as a catalyst in a process using a catalyst-based etching method Then, the platinum component remains on the surface of the workpiece after the processing. On the other hand, the technique described in Patent Document 1 is a technique for removing a platinum component attached to the surface of a workpiece by immersing the workpiece in aqua regia.

However, it is difficult to clean platinum adhered to a workpiece with aqua regia because the aqua regia has a high risk to the human body and requires other facilities such as raising the aqua regia to a high temperature. Therefore, a cleaning method that can easily remove harmful components attached to a workpiece (such as a substrate) is desired.

An object of the present invention is to provide a method and a device for cleaning a workpiece, which can easily remove harmful components attached to the workpiece.

The following means are available to solve the above problems.
<1>
The workpiece to which the harmful component that impairs the quality adheres is brought into contact with or close to a cleaning substance that causes a catalytic reaction in relation to the harmful component and the workpiece, thereby causing a catalytic reaction by the cleaning substance. A method of cleaning a workpiece, the method including a removal step of removing all or a part of the harmful component attached to the surface of the workpiece together with the surface of the workpiece.
<2>
After the removing step, all or a part of the components of the cleaning substance is removed from the workpiece to which the components of the cleaning substance are attached by at least one of wet cleaning, dry cleaning, and scrub cleaning. <1> The method for cleaning a workpiece according to <1>, including a cleaning step.
<3>
Before the removing step, the method includes a step of applying at least one of a liquid, a gas, and ultraviolet light (UV) to the cleaning substance, which can be used to remove a catalyst reaction inhibiting component that inhibits a reaction of a catalyst. The method for cleaning a workpiece according to <1> or <2>.
<4>
A cleaning device that performs the cleaning method according to any one of <1> to <3>.
<5>
A liquid, gas, at least one of a cleaning substance and a pad used in the method for cleaning a workpiece according to any one of <1> to <3>.
<6>
A workpiece to be cleaned by the method for cleaning a workpiece according to any one of <1> to <5>.

According to the method for cleaning a substrate to be processed of the present embodiment as described above, the following effects can be obtained.

(1) A method of cleaning a substrate to be processed is such that a substrate to which a harmful component that impairs quality adheres is brought into contact with or close to a cleaning substance that causes a catalytic reaction in relation to the harmful component and the substrate to be processed. A removing step of removing all or a part of the harmful components attached to the surface of the substrate to be processed by a catalytic reaction with the cleaning substance together with a part of the surface of the workpiece. Thus, when cleaning the substrate to be processed, the harmful components attached to the substrate to be processed can be effectively removed. In cleaning the substrate to be processed, harmful components attached to the substrate to be processed (workpiece) can be easily removed because it is not necessary to use aqua regia or the like which requires another facility for management and use. . For example, if a catalyst composed of Ni or Fe is used as a cleaning substance in a liquid or gas, harmful substances such as Pt (platinum) attached to the surface of the workpiece and adversely affecting the quality can be removed using boiling water. It can be reduced or eliminated without use. Here, the liquid may be ultrapure water. It is preferable that the temperature of the liquid or gas is controlled.

(2) After the removing step, all or a part of the components of the cleaning substance is removed from the workpiece to which the components of the cleaning substance are attached by at least one of wet cleaning and scrub cleaning. Including a washing step. Thus, by performing general cleaning after the removing step, the cleaning substance attached during the cleaning of the first main cleaning unit 13a can be easily removed.

(3) Before the removal step, at least one of a liquid, a gas, and ultraviolet (UV) that can be used to remove a catalyst reaction-inhibiting component that inhibits the reaction of the catalyst is caused to act on the cleaning substance. Process. This makes it possible to remove liquid, gas, or ultraviolet light that can be used to remove the catalytic reaction-inhibiting component that inhibits the catalytic reaction before the substrate on which the harmful component that impairs the quality adheres is brought into contact with or close to the cleaning substance. Since at least one of (UV) can act on the cleaning substance, it is possible to effectively act a catalytic reaction on harmful components attached to the substrate when cleaning the substrate to be processed. it can.

The cleaning device realized by changing the catalyst in the basic configuration of the light irradiation catalyst-based etching device 100 according to the present invention is not limited to the above-described embodiment, and can be appropriately changed.

From another viewpoint, the present disclosure can be applied to, for example, a polishing apparatus (including a surface plate and a polishing pad) utilizing (involving) ultraviolet light (UV). Particularly, the present invention relates to a light irradiation catalyst-based etching apparatus (including a surface plate and a polishing pad) used for processing a surface of a workpiece, which can be suitably used for flat processing using a catalyst-based etching method. .

In recent years, in order to extend the merits of the catalyst-based etching method and complement the disadvantages of the catalyst-based etching method, light is irradiated on the surface of the workpiece so as to increase the flatness without leaving damage on the surface of the workpiece. There has been proposed a light irradiation catalyst-based etching method for flattening a workpiece while performing the same (for example, see Patent Document 1 (Japanese Patent Application Laid-Open No. 2012-64972)).

A light irradiation catalyst reference etching apparatus using a light irradiation catalyst reference etching method described in paragraph [0032] of Patent Document 1 and the like is connected to a container filled with a processing liquid and an upper end of a platen rotating shaft. A surface plate rotatably disposed in the container and also serving as the bottom surface of the container; and a holder connected to the lower end of the holder rotating shaft and detachably holding the workpiece with the surface of the surface to be processed facing downward. A light source disposed below the board. The platen is made of a solid acidic catalyst having excellent light transmittance, for example, quartz. The lower surface of the workpiece is irradiated with light, for example, ultraviolet light, by a light source through a surface plate. Note that the surface plate may be made of sapphire, zirconia, or the like having excellent light transmittance. In the catalyst-based etching method, a removal reaction proceeds from a step end of a workpiece. In addition, by providing a light source for irradiating ultraviolet light, it is possible to perform processing by a reaction based on the catalyst-based etching method from a portion other than the step end of the workpiece that has received the ultraviolet light.

定 The surface plate used in the conventional light irradiation catalyst-based etching method is formed of a material having excellent transparency of ultraviolet light irradiated from a light source of an ultraviolet irradiation unit, such as quartz. In recent years, there has been a need to increase the size of a workpiece, and there is a high possibility that the size of the workpiece will increase in the future. As the size of the workpiece increases, if the load per unit area of the workpiece is to be maintained, it becomes necessary to apply a high load to the light-transmittable surface plate, and the moment load on the surface plate also increases. I do. When the size of the surface plate is increased while maintaining the same thickness as that of the conventional plate, the surface plate is formed of, for example, quartz or the like, and therefore has low strength and is easily damaged. On the other hand, if the thickness of the surface plate is increased so as not to be damaged, the cost increases. Therefore, in the light irradiation catalyst-based etching apparatus, a surface plate capable of transmitting light from an ultraviolet irradiation unit to a surface to be processed of a workpiece and securing the strength and not causing an increase in cost is required.

An object of the present invention is to provide a polishing apparatus utilizing (incorporating), for example, ultraviolet light (UV) having a surface plate capable of securing strength and transmitting light from an ultraviolet irradiation unit to a surface to be processed of a workpiece. And In particular, it is an object of the present invention to provide a light irradiation catalyst reference etching apparatus.

The following means are available to solve the above problems.
<1>
A light irradiation unit that is used for light irradiation catalyst-based etching and emits light having a wavelength that is effective for processing a workpiece;
A surface plate having one or a plurality of platen-side through openings through which light emitted from the light irradiation unit passes, and formed of a material that is not suitable for transmitting light emitted by the light irradiation unit;
A tub portion provided with a bottom plate having one or a plurality of bottom plate-side through openings, which is disposed above the surface plate and through which light emitted by the light irradiation unit passes,
A light transmitting member arranged in the tub portion to close the one or more bottom plate side through openings;
A light irradiation catalyst-based etching apparatus, comprising: a pad portion disposed above the bottom plate in the tub portion.
<2>
The light irradiation catalyst reference etching apparatus according to <1>, wherein the platen is formed of a metal material, a material having resistance to ultraviolet light and having strength, or a material having a surface treatment having resistance to ultraviolet light.
<3>
The light irradiation catalyst reference etching apparatus according to <1> or <2>, wherein the tub portion is detachable from the surface plate.
<4>
The light transmitting member that transmits light having a wavelength that is effective for processing the workpiece is attached in a state where the bottom plate has been subjected to water stop processing in a water stop processing unit,
The light-irradiation catalyst-based etching apparatus according to any one of <1> to <3>, wherein the one or a plurality of platen-side through-openings are provided in a portion of the light transmitting member that does not correspond to the water stopping section. .
<5>
At least any one of the surface plate, the trough part, and the pad part is resistant to at least one of a water component and an oxygen component of 90 degrees or less, according to any one of <1> to <4>. Light irradiation catalyst based etching equipment.
<6>
At least one of a surface plate, a trough, a light transmitting member, and a catalyst pad used in the light irradiation catalyst reference etching apparatus according to any one of <1> to <5>.
<7>
A light irradiation unit which is used for light irradiation catalyst-based etching and emits light having a wavelength effective for processing a workpiece;
A surface plate having one or a plurality of surface plate side through openings through which light emitted from the light irradiation unit passes, and formed of a material that is not suitable for transmitting light emitted by the light irradiation unit,
A peripheral wall rising from the periphery of the surface plate;
A light transmitting member disposed on the surface plate so as to close the one or more surface plate side through openings;
A light irradiation catalyst-based etching apparatus, comprising: a pad portion disposed above the surface plate.

According to the light irradiation catalyst-based etching apparatus of the present embodiment as described above, the following effects can be obtained.

(1) The light irradiation catalyst-based etching apparatuses 100 and 200 are used for catalyst-based etching, and are UV lamps 125 and 225 that emit ultraviolet light, and a plurality of slits through which ultraviolet light emitted from the UV lamps 125 and 225 passes. Support plats 140 and 210 having a groove 141 or a plurality of through holes 211a and formed of a material that does not transmit ultraviolet light, and a plurality of support plats disposed above the support plats 140 and 210 and through which the ultraviolet light passes. Vat containers 150 and 220 provided with bottom plates 151 and 221 having slit grooves 151a or a plurality of through holes 221a, and ultraviolet rays arranged in vat containers 150 and 220 so as to cover the plurality of slit grooves 151a or the plurality of through holes 221a. Permeating members 157 and 212 and a catalyst disposed above bottom plates 151 and 221 in trough containers 150 and 220, respectively. It includes a head 155,240, the. Thus, the strength of the supporting platens 140 and 210 can be ensured while promoting the catalyst-based etching by the ultraviolet light emitted from the UV lamps 125 and 225.

{Circle around (2)} The supporting platens 140 and 210 are formed of a metal material, a material having a resistance to ultraviolet rays and having a strength, or a surface-treated material having a resistance to ultraviolet rays. Thereby, the strength of the support bases 140 and 210 can be secured. Therefore, even if the total load of the members arranged above the support surface plates 140 and 210 increases, breakage of the support surface plates 140 and 210 can be suppressed. Due to the increase in the contact area at the time of the catalyst-based etching processing accompanying the increase in the diameter of the workpiece W, even if the load applied during the processing increases for the purpose of maintaining and increasing the load per unit area, the support surface plate 140 , 210 can be suppressed. As a result, the load increases due to the effect of increasing the size of the surface plate portion due to the increase in the size of the workpiece. However, breakage of the support surface plates 140 and 210 due to the load from the moment direction can be suppressed.

(3) Further, the tub containers 150 and 220 are detachable from the support surface plates 140 and 210. Therefore, handling of the tub containers 150 and 220 is easy. Also, if there is space for attaching the tub containers 150 and 220 to the CMP polishing apparatus, the catalyzer pads 155 and 240 can be used in the catalyst-based etching using water by attaching the tub containers 150 and 220 to the polishing apparatus. It becomes possible to do. In the case where there is no hole for irradiating light from below on the support platens 140, 210, the catalyst pads 155, 240 need not have a penetrating groove.

(4) Further, the ultraviolet transmitting members 157 and 212 are attached to the bottom plates 151 and 221 in the water stopping sections 157a and 212a in a state where the water blocking processing is performed. The groove 141 or the plurality of through-holes 211a are provided in portions of the ultraviolet transmitting members 157, 212 that do not correspond to the water stopping sections 157a, 212a. Therefore, it is possible to prevent the water stoppage processing units 157a and 212a from deteriorating due to the ultraviolet light emitted from the UV lamps 125 and 225.

The light irradiation catalyst-based etching apparatus 100 according to the present invention is not limited to the above-described embodiment, and can be appropriately changed.

Further, the first device example and the second device example of the above embodiment may be changed to other embodiments described below.
For example, in the first apparatus example of the light irradiation catalyst-based etching apparatus 100 of the embodiment shown in FIGS. 2 to 6, the support platen 140 of the light irradiation catalyst-based etching apparatus 100 has the slit grooves 141 of the first apparatus example. Instead, the workpiece W to be irradiated with ultraviolet light may have an ultraviolet light irradiation opening for ultraviolet light corresponding to the entire surface to be processed or most of the size. Then, a UV lamp 125 is provided below the UV irradiation opening, and UV light is irradiated by the UV lamp 125. After irradiating ultraviolet rays with the UV lamp 125, polishing processing is performed by the polishing head 163.

When the polishing process is performed, the base 110 is moved along a parallel rail (not shown) in the front-rear direction (the direction penetrating through FIG. 2) in FIG. In the portion where there is no, as in the above-described embodiment, the main shaft 160 is lowered to bring the workpiece W supported or held by the polishing head 163 into contact with or close to the catalyst pad 155. Thereafter, the support platen 140 is vibrated to the left and right on the paper surface of FIG. 2 by the drive motor 182, and in this state, the base 110 is swung within a certain range. In this state, the rotation of the main shaft 160 may or may not be optional. After the processing, the workpiece W may be returned to the ultraviolet irradiation opening again to irradiate the ultraviolet rays, and then the polishing operation may be repeated. If the spindle 160 (polishing head 163) is rotated with the workpiece W facing the UV lamp 125, the polishing surface of the workpiece W can be more uniformly irradiated with ultraviolet rays.
The merit of this method is that since the entire surface of the surface of the workpiece W to be processed can be irradiated with ultraviolet light once, when the surface is to be processed by several nm, for example, by setting the number of reciprocations, the amount can be reduced to a value close to several nm. It is possible to control the processing of the surface of the workpiece W.

Further, for example, in the case of the second apparatus example of the light irradiation catalyst reference etching apparatus 200 of the embodiment shown in FIG. 7 to FIG. 10, since the support platen 210 rotates at the time of processing, other than the first apparatus example In order to perform an operation similar to the above embodiment, the supporting surface plate 210 is provided on the outer diameter portion instead of the bottom plate side through-opening 221a of the second device example, and the entire surface of the workpiece W to be irradiated with the ultraviolet light to be processed. Alternatively, an opening for ultraviolet irradiation corresponding to most of the size may be provided. Then, a light irradiation unit 225 is provided below the ultraviolet irradiation opening, and ultraviolet light is irradiated from the light irradiation unit 225 to the outer diameter portion with the polishing head 260 raised. After irradiating the light irradiating unit 225 with ultraviolet light, the light irradiating unit 225 is moved to the inner diameter portion of the support platen 210.

Then, the workpiece W supported or held by the polishing head 260 is lowered and brought into contact with or close to the catalyst pad 240. Subsequently, the catalyst-based etching process is performed. After the processing, the light irradiation unit 225 is moved to the outer diameter portion with the polishing head 260 raised again, and the workpiece W is irradiated with ultraviolet light. This operation is repeated. By providing the light irradiating unit 225 at the inner diameter portion or the center portion, the processing operation of the catalyst-based etching process may be repeated at the outer diameter portion after the light irradiation with the polishing head 260 raised. When the light irradiation part 225 is present at the inner diameter part or the center part, the lower rotation shaft 271 of the hollow drive mechanism 270 is present around the light irradiation part 225. The outer diameter portion may be held by a bearing.
The merit of this method is that since the entire surface of the surface of the workpiece W to be processed can be irradiated with ultraviolet light once, when the surface is to be processed by several nm, for example, by setting the number of reciprocations, the amount can be reduced to a value close to several nm. It is possible to control the processing of the surface of the workpiece W.

200 Catalyst based etching system (catalyst based system)
240 Catalyst pad (catalyst body)
W Workpiece

Claims (6)

1. A catalyst body provided with a catalyst layer for removing only a portion in contact with or close to the surface of the workpiece by a catalyst-based reaction,
   After the surface of the workpiece is abutted or brought close to the surface of the catalyst body so that the catalyst film is not peeled off, a processing execution unit that performs a surface forming processing operation required for removal by a catalyst-based reaction, Equipped catalyst reference device.
2. The catalyst-based reaction is catalyst-based etching or catalyst-based cleaning,
   2. The catalyst reference device according to claim 1, wherein the processing operation performed by the processing execution unit is at least one of a flattening process required for catalyst-based etching and a main operation required for establishing catalyst-based cleaning. 3.
3. The catalyst body such that the surface of the catalyst body and the surface of the workpiece are parallel, and the catalyst body is movable in a range including a state in which the surface of the catalyst body and the surface of the workpiece are not parallel. 3. The catalyst reference device according to claim 1, further comprising a tilt movable mechanism that can tilt at least one of the workpieces. 4.
4. The inclination movable mechanism portion, in the surface direction of the surface of the catalyst body or the surface of the workpiece, the difference in height between both ends of the surface of the catalyst body or the surface of the workpiece is 0.01 mm or more. The catalyst reference device according to claim 3, wherein at least one of the catalyst body and the workpiece can be tilted to a certain extent.
5. The tilt movable mechanism unit tilts at least one of the catalyst body and the workpiece such that a tilt angle of a surface of the workpiece with respect to a surface of the catalyst body is relatively 0.03 ° or more. The catalyst reference device according to claim 3, wherein the reference device can be heated.
6. A catalyst pad corresponding to the operation of the device according to any one of claims 1 to 5.

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