JP2020035989A - Light irradiation catalyst-based etching device - Google Patents

Abstract

To provide a light irradiation catalyst-based etching device having a surface plate capable of transmitting light from an ultraviolet irradiation unit with secured intensity.SOLUTION: A light irradiation catalyst-based etching device 100, 200 include: a light irradiation unit 125, 225 which outputs light having a wavelength effective for processing a workpiece; a surface plate 140, 210 which includes one or a plurality of surface plate openings 141, 211a, through which the light output from the light irradiation unit 125, 225 passes, and is formed of a material unsuitable to transmit light output by the light irradiation unit; a tub part 150, 220 arranged upward of the surface plate, and having a bottom plate which has one or a plurality of bottom plate side through openings 151a, 221a through which light transmits; a light transmission member 157, 212 arranged on the tub part 150, 220 in a manner to block the one or the plurality of bottom plate side through openings 151a, 221a; and a pad part 155, 240 arranged upward of the bottom plate 151, 221 of the tub part 150, 220.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a polishing apparatus (including a surface plate and a polishing pad) utilizing (involving) ultraviolet light (UV), for example. Particularly, the present invention relates to a light irradiation catalyst-based etching apparatus (including a surface plate and a polishing pad) used for processing a surface of a workpiece, which can be suitably used for flat processing using a catalyst-based etching method. .

  In recent years, in order to extend the merits of the catalyst-based etching method and complement the disadvantages of the catalyst-based etching method, light is irradiated on the surface of the workpiece so as to increase the flatness without leaving damage on the surface of the workpiece. A light irradiation catalyst-based etching method for performing flat processing of a workpiece while performing the processing has been proposed (for example, see Patent Document 1).

  A light irradiation catalyst reference etching apparatus using a light irradiation catalyst reference etching method described in paragraph [0032] of Patent Document 1 and the like is connected to a container filled with a processing liquid and an upper end of a platen rotating shaft. A surface plate rotatably disposed in the container and also serving as a bottom surface of the container; and a holder connected to a lower end of the holder rotating shaft and detachably holding the workpiece with the surface of the surface to be processed facing downward. A light source disposed below the board. The platen is made of a solid acidic catalyst having excellent light transmittance, for example, quartz. The lower surface of the workpiece is irradiated with light, for example, ultraviolet light, by a light source through a surface plate. Note that the surface plate may be made of sapphire, zirconia, or the like having excellent light transmittance. In the catalyst-based etching method, a removal reaction proceeds from a step end of a workpiece. In addition, by providing a light source for irradiating ultraviolet light, it is possible to perform processing by a reaction based on the catalyst-based etching method from a portion other than the step end of the workpiece that has received the ultraviolet light.

JP 2012-64972 A

  The surface plate used in the conventional light irradiation catalyst-based etching method is formed of a material having excellent transparency of ultraviolet light irradiated from a light source of an ultraviolet irradiation unit, for example, quartz or the like. In recent years, there has been a need to increase the size of a workpiece, and there is a high possibility that the size of the workpiece will increase in the future. As the size of the workpiece increases, if the load per unit area of the workpiece is to be maintained, it becomes necessary to apply a high load to the light-transmittable surface plate, and the moment load on the surface plate also increases. I do. When the size of the surface plate is increased while maintaining the same thickness as that of the conventional plate, the surface plate is formed of, for example, quartz or the like, and therefore has low strength and is easily damaged. On the other hand, if the thickness of the surface plate is increased so as not to be damaged, the cost increases. Therefore, in the light irradiation catalyst-based etching apparatus, a surface plate capable of transmitting light from an ultraviolet irradiation unit to a surface to be processed of a workpiece and securing the strength and not causing an increase in cost is required.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a polishing apparatus utilizing (for example) ultraviolet light (UV) provided with a surface plate capable of securing strength and transmitting light from an ultraviolet irradiation unit to a surface to be processed of a workpiece. And In particular, it is an object of the present invention to provide a light irradiation catalyst reference etching apparatus.

  The light irradiation polishing (catalyst-based etching) apparatus according to the present invention is used particularly for light irradiation catalyst-based etching, and emits light having a wavelength effective for processing a workpiece, and emits light from the light irradiation unit. A surface plate having one or a plurality of surface plate side through openings through which the light passes, and a surface plate formed of a material that is not suitable for transmitting light having a wavelength effective for processing the workpiece; A tub section having a bottom plate having one or more bottom plate side through openings disposed on the upper side and through which light having a wavelength effective for processing the workpiece passes, so as to cover the one or more bottom plate side through openings. A light transmitting member disposed in the trough; and a pad disposed in the trough above the bottom plate.

  In addition, it is preferable that the surface plate is formed of a metal material, a material having a strength while being resistant to ultraviolet rays, or a material having been subjected to a surface treatment having a resistance to ultraviolet rays.

  Further, it is preferable that the tub portion is detachable from the surface plate.

  Further, the light transmitting member effective for processing the workpiece is attached in a state where the water stopping process is performed on the bottom plate in the water stopping portion, and the one or a plurality of platen-side through openings are provided. It is preferable that the light transmitting member is provided at a portion that does not correspond to the water stopping portion.

  Further, it is preferable that at least one of the surface plate, the tub unit, and the pad unit has resistance to at least one of water and oxygen at 90 degrees or less.

  The present invention also relates to at least one of a surface plate, a tub, a light transmitting member, and a catalyst pad used in the light irradiation catalyst reference etching apparatus.

  Further, the present invention is used for light irradiation catalyst-based etching, and a light irradiation unit that emits light having a wavelength effective for processing a workpiece, and one or a plurality of light passages through which the light emitted from the light irradiation unit passes. A surface plate having a surface plate-side through-opening and formed of a material that is not suitable for transmitting light emitted by the light irradiation unit, a peripheral wall portion rising from a peripheral edge of the surface plate, The present invention relates to a light irradiation catalyst reference etching apparatus including a light transmitting member disposed on the surface plate so as to close a surface side through-opening, and a pad portion disposed above the surface plate.

  ADVANTAGE OF THE INVENTION According to this invention, the intensity | strength can be ensured and the light irradiation catalyst reference etching apparatus provided with the surface plate which can permeate | transmit the light from an ultraviolet irradiation part can be provided.

It is a figure showing the whole composition of the work processing system of the present invention. It is the whole side view which shows the 1st example of a light irradiation catalyst reference etching apparatus. It is a longitudinal cross-sectional view which shows the detail of the 1st example of a light irradiation catalyst reference etching apparatus. FIG. 2 is a plan view mainly showing a configuration of a support surface plate and a container of a first example of the light irradiation catalyst-based etching apparatus. It is a figure showing composition of a main drive part of the 1st example of an apparatus for light irradiation catalyst standard etching. It is a figure which shows each electrode part in the 1st example of a light irradiation catalyst reference etching apparatus. It is a perspective view which shows the 2nd example of a light irradiation catalyst reference etching apparatus. It is the perspective view which looked at the 2nd example of a light irradiation catalyst standard etching device from the lower side. It is the fragmentary sectional view which mainly showed the structure of the support surface plate and container of the 2nd example of a light irradiation catalyst reference etching apparatus. FIG. 9 is a diagram illustrating control for starting the light irradiation catalyst-based etching operation after the workpiece held by the polishing head comes into contact with or approaches the surface of the catalyst pad. It is a photographic image which shows the state where the contact part of the conventional contact pad peeled at the peeling part.

  Hereinafter, a preferred embodiment of a workpiece processing system 10 of the present invention will be described with reference to the drawings. The overall configuration of the workpiece processing system 10 according to the present embodiment will be described with reference to FIG. FIG. 1 is a diagram showing the overall configuration of a workpiece processing system 10 according to the present invention.

  As shown in FIG. 1, a workpiece processing system 10 according to the present embodiment includes a mechanical or physical surface processing unit 11 for polishing the surface of a workpiece, a latent scratch removing unit 12, and a first cleaning unit. 13, a first drying unit 14, a latent scratch removal inspection unit 15, a surface finishing unit 16, a second cleaning unit 17, a second drying unit 18, and an inspection unit 19. In addition, mechanical or physical surface processing means 11, latent scar removing means 12, first cleaning means 13, first drying means 14, latent scar removal inspection means 15, surface finishing means 16, second cleaning means 17, second For the movement between the drying means 18 and the inspection means 19, a transport means 20 constituted by a robot or the like is used.

  The mechanical or physical surface processing means 11 performs a surface treatment of cutting, cutting, dicing, or polishing the surface of the workpiece by mechanical or physical processing. Examples of the workpiece include a SiC substrate (wafer). The workpiece is not limited to a substrate such as a SiC substrate. As the mechanical or physical surface processing means 11, for example, a CMP apparatus using a CMP (Chemical Mechanical Polishing) technique of polishing the surface of a workpiece using an abrasive (abrasive grains) is used. CMP increases the mechanical polishing (surface removal) effect due to the relative movement between the polishing agent and the object to be polished by the surface chemical action of the polishing agent (abrasive grains) itself or the action of a chemical component contained in the polishing liquid. This is a technique for obtaining a smooth polished surface. In CMP, for example, hard diamond abrasive grains are used as an abrasive (abrasive grains). When the surface of the workpiece is polished by mechanical polishing such as CMP, even if the surface is apparently flat, there is a possibility that the damage of the so-called latent scratch remains therein. There is a problem that the electrical characteristics are adversely affected, and the strength of the workpiece is reduced due to latent scratches.

  The latent scratch removing unit 12 performs a surface treatment for removing a latent scratch formed on the workpiece by the mechanical or physical surface processing unit 11. In the latent scratch removing means 12, not mechanical processing using abrasive grains, but surface treatment using a chemical reaction not using abrasive grains is performed. Therefore, the latent scratch removing unit 12 can remove the latent scratch formed on the workpiece by the mechanical or physical surface processing unit 11 without forming damage such as a latent scratch on the workpiece. The surface treatment using a chemical reaction without using abrasive grains in the latent scratch removing means 12 may be performed while performing a treatment by an electric action or a treatment of irradiating ultraviolet light. By performing surface treatment using a chemical reaction that does not use abrasive grains while performing treatment by electrical action or treatment by irradiating ultraviolet light, the chemical reaction of the catalyst and the like can be accelerated. The speed of the surface treatment of the object can be improved.

As the processing using a chemical reaction without using abrasive grains, for example, chemical polishing, chemical etching, catalyst-based etching, and the like are used.
Chemical polishing is a surface treatment processing technique using a chemical reaction performed in a state where a polishing liquid that does not use abrasive grains is introduced.
Chemical etching is a surface treatment technology using a chemical reaction performed in a state where an etching solution that does not use abrasive grains is introduced.

  Catalyst-based etching is a processing technique that utilizes a chemical reaction that does not use abrasives or abrasive grains at all. The catalyst-based etching is a processing method that does not introduce scratches, damaged layers or latent scratches on the surface to be processed by the processing.

  Specifically, catalyst-based etching involves placing a workpiece in one or both of a processing solution and a gas, and bringing a catalyst into contact with or in close proximity to a processing surface of the workpiece to form a processing solution and a gas. By making the workpiece relatively move while contacting or approaching the catalyst immersed in one or both of the above, the processing of the processing surface of the workpiece proceeds.

The workpiece may be, for example, a substrate of SiC, GaN, sapphire, gallium oxide, diamond, aluminum gallium nitride, silicon, or the like, an oxide substrate, a ceramic substrate, an epitaxially grown film or a film formation surface, a three-element mixed crystal, An element mixed crystal, a material having at least one component of Si, C, Ga, N, Al, O, and In, and the like. The workpiece used for the catalyst-based etching is not limited to the substrate. The workpiece may be of any shape.
As the catalyst, a metal, for example, a platinum, nickel, or ceramic solid catalyst can be used.
As the processing solution, for example, a liquid that causes hydrolysis on the processing surface of the workpiece, a liquid that generates halogen radicals on the surface of the catalyst, or the like can be used.

Due to the nature of the workpiece, in the case where the surface treatment is performed chemically using the principle of catalyst-based etching, if a gas can be processed more rationally than a processing liquid, a gas is used. As an example of the catalyst-based etching using gas, there is one using an oxidation reaction.
Either rationalization of the catalyst-based etching reaction, improvement of fluidity of gas or liquid near the processing surface of the workpiece, prevention of oxidation of the processing solution, promotion of processing of the workpiece surface, or reactivation of the catalyst surface or removal of catalyst poisons For this purpose, both a liquid and a gas may be used by utilizing at least one of a mist, a microbubble aqueous solution, and a nanobubble aqueous solution. Further, at least one of the liquid and the gas may be heated. Alternatively, ultraviolet light (UV) may be used (used). Alternatively, electricity may be used.

  For example, a nickel sulfate aqueous solution, water (pure water, ultrapure water), or the like can be used as a processing solution that causes hydrolysis on the processing surface of the workpiece. In addition, by using an aqueous solution of nickel sulfate as a processing solution, hydrolysis is caused on a processing surface of a workpiece, and plating can be formed on a catalyst pad 155 (described later) by applying a voltage. When performing catalyst-based etching by causing hydrolysis, with the processing solution interposed between the processing surface of the processing object and the catalyst, while contacting the processing object with the catalyst immersed in the processing solution, The relative movement generates a decomposition product by a hydrolysis reaction on the processing surface of the workpiece. Then, the processing surface of the workpiece is processed by dissolving the decomposition product into the processing solution.

Further, as a processing solution for generating a halogen radical, an aqueous solution of hydrofluoric acid or the like can be used. In the case of performing catalyst-based etching by generating halogen radicals, the work piece is placed in a processing solution in which a molecule containing a halogen that is not normally soluble in the work piece is dissolved, and platinum or ruthenium is used. Chemical reaction between halogen radicals generated on the surface of the catalyst and surface atoms of the workpiece by arranging a catalyst made of a metal catalyst or a ceramic-based solid catalyst that has resistance, such as a solid catalyst, in contact with or close to the processing surface of the workpiece. The workpiece is processed by eluting the halogen compound generated in the above. For example, in the case where the workpiece to be processed on the SiC substrate is subjected to catalytic reference etching, the workpiece is brought into contact with a catalyst immersed in the processing solution using platinum as a contact catalyst and an aqueous hydrofluoric acid solution as a processing solution. Processing is advanced by relative movement while doing.
The details of the configuration of the catalyst-based etching apparatus that performs the catalyst-based etching will be described later.

In addition, in the catalyst-based etching apparatus, in order to extend the merits of the catalyst-based etching method and complement the disadvantages of the catalyst-based etching method, the processing is performed so as to increase the flatness without leaving any damage on the surface of the workpiece. Flattening of the workpiece can be performed while irradiating the surface of the workpiece with light. Thus, in the medium-based etching method in which the removal reaction proceeds from the step end of the workpiece, for example, by providing a light source for irradiating the ultraviolet light, the catalyst can be applied from other than the step end of the workpiece that has received the ultraviolet light Processing by the reaction of the reference etching method becomes possible. Accordingly, not only the catalyst-based etching but also the light-irradiated catalyst-based etching to which light irradiation is further applied can be performed.
The details of the configuration of the light irradiation catalyst-based etching apparatus that performs the light irradiation catalyst-based etching will be described later.

  The latent scratch removing means 12 reduces the latent scratch formed on the workpiece by the surface treatment to at least 30% or less by a surface treatment using a chemical reaction without using abrasive grains before finishing the workpiece. In advance (latent scratch removal step). The latent scratch removing unit 12 removes the latent scratch from the workpiece in advance so as to reduce the latent scratch to at least 30% or less, preferably 10% or less, more preferably 0%.

  Specifically, the surface of the workpiece polished by the mechanical or physical surface processing means 11 such as CMP is an apparently flat surface. However, a workpiece polished by mechanical polishing such as CMP has an inherent damage of a flaw called a latent flaw. Latent scratches have a risk of being formed immediately below the surface of the workpiece during polishing by the mechanical or physical surface processing means 11, and by removing a thickness of, for example, about 100 nm from the surface of the workpiece, Almost all latent wounds can be removed. The thickness at which the latent scratch is removed is not limited to 100 nm because the depth at which the latent scratch is formed varies depending on the method and conditions of mechanical polishing.

  The latent scratch formed on the workpiece by the mechanical or physical surface processing means 11 is obtained by subjecting the workpiece polished by mechanical polishing such as CMP to a surface treatment using a chemical reaction without using abrasive grains. By removing several nm to several tens of nm (for example, 20 nm), the surface can be made to be obvious. From this state, the latent scratch removing means 12 removes the latent scratches from the workpiece by at least 30% or less, preferably 10% or less, more preferably 0% by surface treatment using a chemical reaction without using abrasive grains. In advance so as to reduce The workpiece on which the latent scratch removal process has been performed in the latent scratch removal step is formed.

  Here, in the latent scratch removing means 12 of the present embodiment, for example, processing is performed by a processing method based on catalyst-based etching. After performing the process of removing latent scratches by catalyst-based etching, the surface of the workpiece is coated with a metal, for example, a component composed of platinum, gold, chromium, or a ceramic solid catalyst, with harmful components that impair the quality. Attached as a kimono.

  Therefore, in the present embodiment, cleaning (cleaning) for removing harmful components attached to the surface of the article is performed. Cleaning for removing harmful components attached to the surface of the workpiece is performed by the first cleaning unit 13.

  The first cleaning unit 13 cleans the surface of the workpiece on which the latent scratch removal processing has been performed by, for example, the catalyst-based etching in the latent scratch removal unit 12. The first cleaning unit 13 includes a first main cleaning unit 13a and a finish cleaning unit 13b.

  The first main cleaning means 13a is used for cleaning by contacting or approaching a workpiece to which a harmful component that impairs quality has adhered to a cleaning substance that causes a catalytic reaction in relation to the harmful component and the workpiece. By the catalytic reaction of the substance, all or a part of the harmful component attached to the surface of the workpiece is removed together with a part of the surface of the workpiece (cleaning step).

  For example, when the surface of the workpiece is processed by the catalyst-based etching in the latent scratch removing unit 12, the first main cleaning unit 13a is used as a catalyst in the catalyst-based etching on the surface of the workpiece. Further, for example, harmful substances such as Pt (platinum) are attached as metal contamination. The first main cleaning unit 13a is used as a catalyst in, for example, catalyst-based etching, and cleans harmful substances attached to the surface of the workpiece. In the first main cleaning unit 13a, for example, the above-described catalyst-based etching technique is applied, and only a portion in contact with or in proximity to the workpiece can be removed at the atomic level using a chemical reaction. In particular, when the surface of the object to be cleaned, which is a workpiece, has a one-by-layer step terrace structure or the like, the first main cleaning means 13a is used for cleaning when the atomic level flatness of the surface is to be maintained. Cleaning is possible at the atomic level from the edge. By using a catalyst as a cleaning substance, it is possible to perform a cleaning process of a harmful substance attached to the surface of the workpiece. Further, the first main cleaning unit 13a can perform cleaning without causing latent scratches.

  Examples of the catalyst used as the cleaning substance include noble metals, transition metals, ceramic solid catalysts, basic solid catalysts, and acidic solid catalysts. The harmful substances (components) attached to the surface of the workpiece and the surface components to be removed by cleaning the workpiece need to be mixed in the liquid by the cleaning substance and the fluid in the cleaning based on the catalyst. When selecting a cleaning substance, it is necessary to consider the workpiece and components of the cleaning substance that adhere to the workpiece. The cleaning substance used in the first main cleaning means 13a needs to be removable by the first finish cleaning means 13b without adversely affecting the workpiece as much as possible. It is necessary to select the catalyst used for the first main cleaning unit 13a and the first finish cleaning unit 13b in consideration of the compatibility between the workpiece, the cleaning substance, and the cleaning unit.

  For example, conventionally, in order to remove harmful substances such as Pt (platinum) adhered to the surface of the workpiece, it has been considered that the removal cannot be performed unless boiling aqua regia is used. However, resistance to aqua regia and heat was low depending on the components of the workpiece. Conventionally, even if an attempt is made to clean the workpiece by a cleaning method capable of removing the component to be removed attached to the workpiece and the component to be removed, the cleaning liquid, the cleaning method, and the resistance of the workpiece cause the processing to be difficult. In some cases, it was not possible to remove the components adhering to the object that were to be removed. On the other hand, in the first main cleaning means 13a, if a catalyst composed of Ni or Fe is used as a cleaning substance in a liquid or gas, the quality of Pt (platinum) or the like adhered to the surface of the workpiece is reduced. Harmful substances that have an adverse effect can be reduced or eliminated without using boiling water. In addition, the first main cleaning means 13a is not a cleaning that dissolves the entire surface only by applying a chemical to the surface as in cleaning using a general chemical, so that the surface roughness of the workpiece can be easily maintained.

  Normal cleaning avoids the attachment of new particles (dust) and metal contamination. However, in the cleaning of the present invention (the first main cleaning means 13a), the workpiece is intentionally used as a cleaning substance, for example, a component serving as a new metal contamination source. The components of the cleaning substance (metal contamination and the like) attached to the workpiece are compatible with the cleaning means of the first finishing cleaning means 13b and the workpiece in the cleaning means of the first finishing cleaning means 13b. Therefore, by selecting a cleaning liquid or the like capable of removing components of a cleaning substance (metal contamination and the like) in consideration of the cleaning means of the first finishing cleaning means 13b, the processing can be performed without causing latent scratches and pits in the cleaning step. It becomes possible to reduce or remove harmful components from the surface of the object.

  Note that a substrate can be used as the workpiece, and other than the substrate, an object having a different thickness or shape can be used. As the workpiece, for example, a columnar shape, a prismatic shape, a cylindrical shape or a rectangular tube shape, a shape having irregularities or holes, or a three-dimensional shape can be used. The material of the workpiece may be an epitaxially grown film or a film-formed surface, a three-element mixed crystal, a four-element mixed crystal, an oxide, a ceramic, an atom of In, Si, C, Ga, N, O, Al, or Zn. There is at least something to include. It is better to be able to polish (use) ultraviolet light (UV).

  In the present embodiment, the first main cleaning unit 13a performs cleaning for removing adhered components such as Pt (platinum) adhered to the surface of the workpiece using Ni as a catalyst as a cleaning substance, for example. . In this case, the cleaning operation of the first main cleaning means 13a is performed by performing cleaning using Ni as a catalyst instead of performing etching using Pt as a catalyst by using the above-described apparatus for performing catalyst-based etching. Pt attached to the object can be removed. In this case, Pt is removed from the surface of the workpiece, and Ni adheres to the surface of the workpiece from which Pt has been removed.

  The first main cleaning means 13a is provided to remove a catalytic reaction inhibiting component which inhibits the reaction of the catalyst, at least before the workpiece to which the harmful component impairing the quality is attached is brought into contact with or close to the cleaning substance. A treatment (catalytic reaction inhibiting component removing step) in which at least one of a usable liquid, gas, and ultraviolet light (UV) acts on the cleaning substance may be performed. This makes it possible to effectively remove harmful components attached to the workpiece when cleaning the workpiece. Further, at least before the workpiece is brought into contact with or close to the cleaning substance, the surface of the workpiece may be irradiated with ultraviolet light (UV). By applying ultraviolet (UV) light, harmful components can be removed from the surface of the workpiece, for example, only a few layers of the atomic layer other than the end of the step terrace. Irradiation with ultraviolet light (UV) can improve the possibility of removing harmful components from the surface of the workpiece.

  Further, the first main cleaning means 13a performs a catalytic reaction comprising at least one of a gas and a liquid before and / or after the workpiece to which the harmful component impairing the quality has adhered comes into contact with or comes close to the cleaning substance. A process of causing a component such as a catalyst poison to be deactivated to act on a catalyst component attached to a workpiece (a catalyst component operation step) may be performed. As a result, when cleaning the workpiece, the catalyst poison acts on the harmful components such as the catalyst component attached to the workpiece, so that the catalytic reaction by the harmful catalyst component attached to the surface of the workpiece is performed. Can be reduced.

  The first finish cleaning unit 13b executes a cleaning process for removing harmful substances attached to the surface of the workpiece by the first main cleaning unit 13a. The first finish cleaning means 13b cleans all or a part of the components of the cleaning substance by at least one of general cleaning means (cleaning) of wet cleaning, dry cleaning, scrub cleaning, or ultrasonic cleaning. The components of the substance are removed from the adhered workpiece (cleaning step). In the present embodiment, the cleaning substance used in the first main cleaning unit 13a is a cleaning substance that can be removed by general cleaning. General cleaning may be any cleaning as long as it can remove or reduce components adhered by the cleaning substance, and needs to satisfy the conditions of use of the workpiece.

Wet cleaning and scrub cleaning as general cleaning (cleaning) will be described.
Wet cleaning is cleaning using water as a medium. A typical example of wet cleaning is RCA cleaning. Cleaning such as RCA cleaning which does not generate latent scratches or pits on the workpiece due to compatibility with the workpiece is preferable.
Scrub cleaning is cleaning in which a contaminant attached to the surface of a workpiece (such as a substrate) is physically impacted to remove the contaminant from the surface of the workpiece (such as a substrate).

  In the present embodiment, the first finish cleaning unit 13b removes, for example, a Ni component, which is a cleaning substance, attached to the surface of the workpiece by the first main cleaning unit 13a. It is removed by performing a general cleaning used for cleaning.

  Conventionally, when a harmful substance such as Pt (platinum) attached to a workpiece is removed from the surface of the workpiece, the workpiece is immersed in aqua regia to adhere to the surface of the workpiece. The removed platinum had been removed. It is difficult to clean platinum adhered to a workpiece with aqua regia, because the aqua regia has a high risk to the human body and requires other facilities such as a high aqua regia.

On the other hand, according to the present invention, all or a part of the harmful component adhered to the surface of the workpiece by the catalytic reaction of the cleaning substance is removed by the first main cleaning means 13a. Together with it. This eliminates the need to use aqua regia or the like, which requires another facility for management and use, in cleaning the workpiece, thereby easily removing harmful components attached to the workpiece. This is particularly effective in the case of a combination that cannot be cleaned due to the relationship between the workpiece, the harmful substance to be removed, and the cleaning liquid. As an example, a case where the harmful substance adhering to the workpiece to be removed is Pt (platinum) and the workpiece is a workpiece that cannot withstand boiling aqua regia due to material or temperature conditions. There is.
In addition, by performing general cleaning by the first finish cleaning unit 13b, the cleaning substance attached during cleaning of the first main cleaning unit 13a can be easily removed.

  The first drying unit 14 dries the workpiece cleaned by the first cleaning unit 13.

  The latent scratch removal inspection unit 15 inspects whether or not the latent scratch formed on the workpiece has been removed after being cleaned by the first cleaning unit 13 and dried by the first drying unit 14. As a method of confirming the presence or absence of a latent scratch formed on a workpiece, for example, there is a method of observing the surface of the workpiece after removing a predetermined thickness of the surface of the workpiece on which the latent scratch is formed.

A specific procedure for confirming the presence or absence of a latent scratch formed on the workpiece by the latent scratch removal inspection unit 15 will be described.
First, in the workpiece on which the latent flaw is formed, the surface of the workpiece is processed using a chemical reaction that does not use any abrasive or abrasive grains, to a thickness such that the latent flaw appears on the surface, for example, Remove several nm to several tens nm. In this case, for example, a latent flaw appearing on the surface of the workpiece is set as a reference before removing the latent flaw from the workpiece. The thickness of the workpiece such that the latent scratch appears on the surface may be a thickness that allows the latent scratch to be revealed to the extent that it becomes a reference when calculating the residual rate of the latent scratch. The thickness for removing the surface is set as appropriate.

  In the inspection step for confirming the presence or absence of a latent scratch, the surface of the workpiece is further removed by a predetermined thickness, for example, several nm to several tens of nm, from a reference before removing the latent scratch. Then, every time a few nm to several tens of nm are removed, an inspection process is performed to confirm the presence or absence of a latent flaw by observing a difference from a reference before removing the latent flaw. Thereby, in the inspection step for confirming the presence or absence of latent scratches, the residual rate of latent scratches on the workpiece is reduced to at least 30% or less, preferably 10% or less, and more preferably to 0%. Inspect whether it has been done.

  For example, when the surface is viewed from the front, the number of latent scratches, the total length of the latent scratches, and the total area of the range where the latent scratches are formed are calculated based on these. To judge. The latent scratch on the surface of the workpiece can be measured by, for example, a SiC wafer defect inspection device (SICA manufactured by Lasertec Corporation).

  When the workpiece inspected by the latent scratch removal inspection unit 15 does not satisfy the predetermined residual ratio of latent scratches, the workpiece is returned to, for example, the latent scratch removal unit 12 to remove latent scratches from the workpiece. Perform reprocessing. If the workpiece inspected by the latent scratch removal inspection unit 15 satisfies a predetermined residual ratio of latent scratches, the workpiece is transported to the surface finishing unit 16. Here, when the workpiece is a mass-produced product, for example, in the same lot, if a condition for removing latent scratches is found, the latent workpiece is removed under the same conditions for the remaining workpieces. Since the step of inspecting the workpiece can be omitted, the processing time can be reduced.

  The thickness to be removed from the surface of the workpiece by the latent scratch removing means 12 is, for example, a device that has been subjected to the latent scratch removal processing under a plurality of latent scratch removal conditions, is converted into a device, and the device performance result is obtained. Based on the collected experimental data and the like, based on the collected experimental data and the like, the workpiece is processed until the workpiece is free of latent scratches (for example, 30% or less, 10% or less, 0%). The thickness to be removed from the surface of the object may be set in advance.

  Conventionally, when mechanical polishing such as CMP is performed in the surface processing of a workpiece, the processing is performed such that the surface of the workpiece is flattened and rough polishing that is easily damaged is gradually performed. In such a case, the processing is performed to reduce the number of scratches. In other words, the surface of the workpiece is polished by making the abrasive particles finer, so that the surface of the workpiece is flat, and latent scratches are hardly formed. This conventional processing method is a processing method in which the surface of the workpiece is flattened so that latent scratches are hardly formed, and is not performed while observing the latent scratches of the workpiece.

  On the other hand, the present invention is to flatten the surface of a workpiece after removing a latent scratch on the workpiece. In other words, in the method for processing a workpiece according to the present invention, the latent scratch formed on the workpiece by the surface treatment is subjected to a surface treatment using a chemical reaction without using abrasive grains before finishing the workpiece. And once removed from the workpiece in advance so as to reduce it to at least 30% or less. Thus, after performing the process of eliminating latent scratches from the workpiece, the finishing process is performed. Therefore, it is not necessary to perform the entire polishing process of the workpiece by the processing method at the atomic level which requires a processing time such as the catalyst-based etching from the step end, thereby shortening the flattening time of the workpiece. In addition, the surface of the workpiece can be processed at low cost.

In this way, the surface treatment using a chemical reaction without using abrasive grains removes latent scratches from the workpiece in advance before finishing, so that no new latent scratch is formed. Just finishing the surface will improve. Conventionally, surface finishing has been performed while removing latent scratches from the state where latent scratches exist.
In addition, after the processing time is reduced by mechanical polishing such as CMP to polish the surface of the substrate as a workpiece, the latent scratch formed by mechanical polishing is removed in the latent scratch removal step. Can be removed from the surface. Therefore, it is possible to ensure that the surface of the substrate to be processed is subjected to the catalyst-based etching by the finishing process without causing any latent scratches on the substrate to be processed. Even in the case of performing the finish processing by CMP, the risk of newly generating a latent scratch can be minimized by shortening the finish processing time, because the existing latent scratch does not need to be removed.
Therefore, since the surface is finished after reducing the latent scratches to at least 30% or less before the finish processing, the risk of generating latent scratches in the finish processing is reduced, and the finish processing time is reduced without causing the workpiece to have latent scratches. In addition to being able to be shortened, latent scratches can be reduced to zero, and the surface of the workpiece can be finished as flat as required by the device. If no slurry is used, it is easy to handle and the surface of the workpiece can be processed at low cost.

  For example, in the case of the present invention, if the number of latent scratches is reduced to zero in the latent scratch removal step of the present invention before the finish processing, the finish processing does not require the removal of latent scratches, so the formation of the surface is minimized. Processing is sufficient. When the finishing process is performed by the catalyst-based etching, if there are no latent scratches in the pre-processing, no latent scratches occur even in the finishing process. It is possible to finish. When the finishing process is CMP, it is a process of increasing the number of latent scratches from zero in the state of latent scratches. In the present invention, when the finishing process is CMP, it is sufficient that the finishing CMP is performed only for a short time until the surface is formed. Therefore, the risk that a new latent scratch is generated in the finishing process can be reduced as compared with the related art.

  As in the past, for example, in a process of forming a surface from a state where several hundred latent scratches exist on the surface of the workpiece and performing the latent scratch as little as possible, conventionally, only a thickness of about 100 nm is used. In order to remove latent scratches, it is necessary to remove the entire surface evenly by finishing, which tends to reduce the processing rate. At this time, if the finishing is performed by CMP using abrasive grains, conventionally, only a thickness of about 100 nm must be removed by finishing. If the finishing is performed by CMP using abrasive grains, there is always a risk of generating new latent scratches until a thickness of about 100 nm can be removed from the surface before processing. According to the present invention, the problem can be improved. As a supplement, in the description of the conventional technology, the depth at which the latent scratch exists is described as about 100 nm, but the depth at which the latent scratch remains is determined by the processing method and conditions performed up to the step before the finishing step. Depends on. Therefore, the depth at which the latent scratch is present is not always about 100 nm.

  The surface finishing means 16 performs finishing processing on the surface of the workpiece from which the latent scratch has been removed by the latent scratch removing means 12 (surface finishing step). The surface finishing means 16 is executed by, for example, finishing CMP, catalyst-based etching, or the like. The surface finishing means 16 mainly performs a process of flattening the surface of the workpiece in the finishing process of the workpiece. The surface finishing means 16 performs a process of flattening the surface of the workpiece on which the latent scratch removal processing has been performed in the latent scratch removal step performed by the latent scratch removal means 12. In other words, the latent scratch removing step in the latent scratch removing means 12 is mainly processing for removing latent scratches from the surface of the workpiece, and the finishing processing in the surface finishing means 16 is for flattening the surface of the workpiece. Is the main processing.

  In the finishing CMP, a polishing process is performed using a slurry for finishing (for example, a slurry in which the abrasive grains contained in the slurry have a smaller particle diameter) than the CMP used in the mechanical or physical surface processing means 11 described above, and the polishing process is performed. It is performed within a range that does not cause latent damage to the workpiece. Therefore, the finish CMP can reduce the risk of causing a latent scratch on the workpiece more stochastically than the conventional method.

  The catalyst-based etching is a process similar to the process used in the latent scratch removing unit 12 described above, and can also be used for a surface finishing process. Catalyst-based etching, even when used in the finishing process, uses a chemical reaction that does not use any abrasives or abrasive grains, so it does not cause latent scratches on the surface of the workpiece, It can be used for finishing treatment for flattening the surface.

  The second cleaning unit 17 cleans the surface of the workpiece on which the surface finishing process has been performed. The second cleaning unit 17 includes a main cleaning unit 17a and a finish cleaning unit 17b. The configuration and operation of the second cleaning unit 17 are the same as the configuration and operation of the first cleaning unit 13, and a description thereof will be omitted.

  The second drying unit 18 dries the workpiece cleaned by the second cleaning unit 17.

The inspection means 19 inspects the workpiece after the surface processing. The inspection unit 19 measures, for example, the thickness and weight of the workpiece after the surface processing, and inspects whether or not a predetermined standard is satisfied. When the predetermined criterion is not satisfied, for example, it is controlled to be removed as a defective product or to reprocess the workpiece.
The workpiece inspected by the inspection means 19 is transported to the next step.

[Light irradiation catalyst-based etching equipment]
Next, a description will be given of a light irradiation catalyst-based etching apparatus (processing apparatus) capable of executing the catalyst-based etching performed in the latent scratch removing means 12 and the surface finishing means 16 in FIG. For example, a first example of a catalyst-based etching apparatus and a second example of a catalyst-based etching apparatus will be described. A first apparatus example and a second apparatus example of the light irradiation catalyst reference etching apparatus are processing apparatuses that perform a latent scratch removing step performed by the latent scratch removing unit 12 and a surface finishing step performed by the surface finishing unit 16. This is an example.

(First Example of Light Irradiation Catalyst-Based Etching Apparatus)
A first example of a light irradiation catalyst-based etching apparatus that performs light irradiation catalyst-based etching will be described. FIG. 2 is an overall side view showing a first example of the light irradiation catalyst-based etching apparatus 100. FIG. 3 is a longitudinal sectional view showing details of a first example of the light irradiation catalyst-based etching apparatus 100. FIG. 4 is a plan view mainly showing a configuration of the support platen 140 and the tub container 150 of the first example of the light irradiation catalyst-based etching apparatus 100. FIG. 5 is a diagram showing a configuration of the main drive unit PD of the first example of the light irradiation catalyst-based etching apparatus 100.

  The light irradiation catalyst reference etching apparatus 100 in the first apparatus example includes a pair of flat processing portions SP1 and SP2 at left and right positions of the base 110 as shown in FIGS. The left and right flat processing portions SP1 and SP2 have the same structure, and have substantially the same weight except for processing accuracy errors. The details of the flattened portion SP1 will be described below with reference to FIG.

  As shown in FIG. 3, pedestals 121 and 122 having a symmetrical L-shaped cross section are arranged in parallel on a base 110, and extend in the front-rear direction in FIG. 3 (the left-right direction in FIG. 2). In addition, each of the gantry 121 and 122 has the left and right flat processing portions SP1 and SP2 continuously and integrally provided and is positioned on the same straight line. On each of the left and right mounts 121 and 122, a rail 131 constituting a linear guide 130 as a guide member is fixed along these. The rail 131 is provided with sliders 132 slidably movable at two positions in the longitudinal direction along the rails 131. On the sliders 132 on the left, right, front and rear sides, a rectangular support surface plate as a second holding means is provided. 140 (surface plate) is mounted.

  The support surface plate 140 is formed of a material that is not suitable for transmitting light having a wavelength effective for processing a workpiece. Specifically, the support surface plate 140 is formed of a material that does not transmit ultraviolet light. The support surface plate 140 is made of, for example, a metal material, a material having resistance to ultraviolet light and having strength, or a material which has been subjected to a surface treatment resistant to ultraviolet light. For example, the support surface plate 140 is formed of a metal such as SUS (stainless steel) that does not transmit ultraviolet light, a ceramic that does not transmit ultraviolet light, a resin that does not transmit ultraviolet light, or a composite material thereof. In order to make the surface more resistant to ultraviolet light, liquid or gas, the surface is surface-treated with a film formed or plated of platinum group or gold, or a resistant film such as Teflon (registered trademark) coat. It may be. Therefore, the strength of the support platen 140 is ensured as compared to the case where the support platen 140 is entirely made of quartz or the like for transmitting ultraviolet light. It is even more preferable that the support platen 140 is formed of SUS304, SUS316, or the like, which is suitable for use in a clean room and resistant to ultraviolet rays. Further, it is preferable that the support platen 140 has resistance to a water component or an oxygen component of 90 degrees or less. The temperature of the water component may be 75 degrees or less depending on the workpiece. For example, in the case where the workpiece is SiC, when the temperature of the water component exceeds about 60 degrees to about 70 degrees, the processing rate is critically improved. When the workpiece is SiC, it is sufficient that the workpiece is resistant to a water component of at least 73 degrees.

  The support platen 140 has a plurality of slit grooves 141 (platen-side through openings) through which ultraviolet light emitted from the UV lamp 125 passes. The plurality of slit grooves 141 extend in the width direction orthogonal to the moving direction of the support surface plate 140 (the direction in which the rail 131 extends) moved by the drive motor 182 described later, and move in the movement direction of the support surface plate 140 (the rail 131). (Extending direction). The plurality of slit grooves 141 are formed at positions where ultraviolet light from a UV lamp 125 (described later) disposed below the support surface plate 140 is transmitted. It is formed at a position where the ultraviolet light from the substrate is transmitted.

  The support surface plate 140 is capable of reciprocating linear movement along the rail 131. In addition, the mounts 121 and 122 need only have a surface on which the rail is mounted, such as a flat bar, in addition to the L-shaped cross section. The base 110 and the frames 121 and 122 may be integrated. When the base 110 is integrated with the mounts 121 and 122, the merit is that the base 110 and the mounts 121 and 122 are separate from each other, for example, during a cutting process that increases the surface accuracy between the base 110 and the mounts 121 and 122. It is a point that is less likely to be distorted than when it is a body. Further, the guide member for guiding the support platen 140 is not limited to the above-described structure, and may be, for example, a member that holds a guide shaft and slides along the guide shaft. The support platen 140 does not need to be particularly rectangular.

A UV lamp 125 (ultraviolet irradiation unit) that emits ultraviolet light and is used for light irradiation catalyst-based etching is disposed below the support surface plate 140. The UV lamp 125 emits ultraviolet light having a wavelength effective for processing a workpiece. For example, the UV lamp 125 may be configured by at least one of a low-pressure mercury UV lamp, a high-pressure mercury lamp, a metal halide lamp, an excimer lamp, and an LED lamp that emits light of an ultraviolet light wavelength.
At the center of the upper surface of the support surface plate 140, a tub container 150 (tub unit) for storing gas or liquid is mounted. The tub container 150 is detachable from the support platen 140. In the present embodiment, the tub container 150 is formed with the upper part opened. The tub container 150 is not limited to being open at the top, and may not be open at the top.

  In the present embodiment in which the upper part is opened, the tub container 150 includes a bottom plate 151 disposed above the support platen 140 and a peripheral wall portion 152 rising from a peripheral edge of the bottom plate 151. The tub container 150 is formed in a tub shape capable of holding a processing solution or gas. The tub 150 is made of, for example, a material such as resin, metal, ceramics, or a glass-based metal oxide having a low transmittance of ultraviolet light. The tub 150 is preferably resistant to water components or oxygen components of 90 degrees or less. The temperature of the water component may be 75 degrees or less depending on the workpiece. For example, in the case where the workpiece is SiC, when the temperature of the water component exceeds about 60 degrees to about 70 degrees, the processing rate is critically improved. When the workpiece is SiC, it is sufficient that the workpiece is resistant to a water component of at least 73 degrees.

  The processing solution is stored in the tub container 150. In the first example of the photoirradiation catalyst-based etching apparatus 100 of the present embodiment, by using, for example, an aqueous solution of nickel sulfate as the processing solution, hydrolysis is caused on the processing surface of the workpiece and voltage is applied. Thus, plating can be formed on the catalyst pad 155 (described later). When performing catalyst-based etching by causing hydrolysis, with the processing solution interposed between the processing surface of the processing object and the catalyst, while contacting the processing object with the catalyst immersed in the processing solution, The relative movement generates a decomposition product by a hydrolysis reaction on the processing surface of the workpiece. Then, the processing surface of the workpiece is processed by dissolving the decomposition product into the processing solution.

  Here, if a hydrofluoric acid aqueous solution is used as the processing solution, if the ultraviolet transmitting member 157 described later is made of, for example, quartz, the hydrofluoric acid aqueous solution dissolves the quartz. Therefore, in the case of using the ultraviolet transmitting member 157 made of quartz in the light irradiation catalyst reference etching apparatus 100 that irradiates ultraviolet light, a hydrofluoric acid aqueous solution cannot be used as a processing solution. Therefore, in the present embodiment, as a processing solution, a liquid containing at least a water component, for example, ultrapure water or pure water, aqueous hydrogen peroxide, an aqueous solution containing a component such as nickel, which can be used as a catalyst and capable of electrolytic plating, and the like. A liquid that satisfies chemical resistance is used. Further, as the gas, a gas satisfying chemical resistance containing at least one of an oxygen component, a nitrogen component and an ozone component can be used.

  Since the aqueous solution of hydrofluoric acid does not dissolve sapphire glass, the aqueous solution of hydrofluoric acid may be used as the processing solution by forming the ultraviolet transmitting member 157 with, for example, sapphire glass. However, when the ultraviolet transmitting member 157 is made of sapphire glass, it is necessary to select a light source that can transmit sapphire glass and emit light having a wavelength effective for processing a workpiece as a light source. In particular, when hydrogen fluoride is used, a toxic gas is generated in the human body. Therefore, it is necessary to remove the gas with a scrubber or the like to detoxify the gas.

  The tub container 150 is disposed above the support platen 140. Therefore, the tub container 150 can be moved in the movement direction M by moving the support surface plate 140 in the movement direction M (the direction in which the rail 131 extends). As shown in FIG. 4, the tub container 150 is positioned by a pair of positioning members 153 and 153 on both sides in the width direction W orthogonal to the moving direction (direction in which the rail 131 extends) M at the lower end of the tub container 150. In this state, it is attached to the support platen 140. The pair of positioning members 153 and 153 are spaced apart in the width direction W corresponding to the length of the tub container 150 in the width direction W. The pair of positioning members 153 and 153 include a positioning main body 153a extending a predetermined length in the moving direction M (direction in which the rail 131 extends) M of the flat processing portions SP1 and SP2, and a moving direction of the flat processing portions SP1 and SP2 (the rail 131 (Extending direction) M, a positioning extension 153b extending inward at both ends. The pair of positioning members 153, 153 regulate the movement of the tub container 150 in the width direction W by the positioning main body 153a, and the moving direction (rail) of the flattened portions SP1, SP2 in the tub container 150 by the positioning extension 153b. It is fixed to the upper surface of the support surface plate 140 in a state where the movement in the direction (M in which the 131 extends) is restricted. The positioning member 153 may be a general clamp mechanism.

  As shown in FIG. 4, a plurality of slit grooves 151a (bottom plate side through-opening) through which ultraviolet light passes are formed in the bottom plate 151. The plurality of slit grooves 151 a formed in the tub container 150 are provided at positions corresponding to the plurality of slit grooves 141 formed in the support surface plate 140. Further, the support platen 140 has a portion that does not allow the ultraviolet light from the UV lamp 125 to pass therethrough, and prevents irradiation of the ultraviolet light to a portion that does not want to transmit the ultraviolet light, thereby minimizing deterioration of the tub container 150 and the like. Suppress.

  As shown in FIG. 3, an ultraviolet transmitting member 157 is attached to the lower side of the bottom plate 151 in the tub container 150. The ultraviolet transmitting member 157 is a transmitting member that can transmit ultraviolet light from the UV lamp 125 disposed below the support platen 140. In the present embodiment, the ultraviolet transmitting member 157 is made of, for example, quartz.

  The ultraviolet transmitting member 157 is attached to the lower surface of the bottom plate 151 of the tub container 150 so as to cover a plurality of slit grooves 151a (bottom plate side through opening) formed in the bottom plate 151 of the tub container 150. In a state where the ultraviolet transmitting member 157 is disposed below the bottom plate 151 in the tub 150, the periphery of the ultraviolet transmitting member 157 is subjected to a water stopping process in a water stopping section 157a. That is, the ultraviolet transmitting member 157 is attached to the bottom plate 151 in the water stop processing section 157a in a state where the water stop processing is performed.

  Here, regarding the disposition of the water stopping section 157a, the plurality of slit grooves 141 formed in the support surface plate 140 are provided in portions of the ultraviolet transmitting member 157 that do not correspond to the water stopping section 157a. As a result, the water stop processing unit 157a is arranged at a position where the ultraviolet light from the UV lamp 125 does not reach. Therefore, it is possible to prevent the water stoppage processing unit 157a from being deteriorated by the ultraviolet light emitted from the UV lamp 125.

  As shown in FIG. 3, a catalyst pad 155 is provided on the entire surface of the bottom plate 151 of the tub container 150 as an example of a pad portion in which a catalyst layer is formed to a predetermined thickness by sputtering or the like. The catalyst pad 155 has a catalyst layer for flattening the surface of the workpiece W by catalyst-based etching. The catalyst pad 155 is arranged above the bottom plate 151 in the tub 150. A plurality of slit grooves 155a are formed in the catalyst pad 155. The plurality of slit grooves 155 a formed in the catalyst pad 155 are provided at positions corresponding to the plurality of slit grooves 151 a formed in the tub container 150 and the plurality of slit grooves 141 formed in the support platen 140. That is, the plurality of slit grooves 151a formed in the tub container 150, the plurality of slit grooves 141 formed in the support platen 140, and the plurality of slit grooves 155a formed in the catalyst pad 155 continuously penetrate vertically. It is configured to be able to transmit ultraviolet light from the UV lamp 125. The catalyst pad 155 preferably has resistance to a water component or an oxygen component of 90 degrees or less. The slit grooves 155a do not have to be all the same in dimensions and pitch and penetrate, and need not be provided continuously. Further, the slit groove 155a may be a hole or the like. For example, when it is difficult to remove the support platen 140, the plurality of slit grooves 155a formed in the catalyst pad 155 may be formed according to the processing operation, depending on the shape of the workpiece, depending on the processing operation. May be used by being attached to a support surface plate 140 provided with a plurality of slit grooves 141 in which dimensions, pitches, etc. are adjusted. For example, when it is desired to transmit only part of the ultraviolet (UV) light, the through hole of the slit groove 155a formed in the catalyst pad 155 may be optimized. The same applies to the plurality of slit grooves 151a formed in the tub container 150.

  As a material of the catalyst pad 155, rubber, resin, ceramics, glass, metal, or the like having resistance to a processing solution or gas is used. A transition metal such as Pt can be used as the catalyst. When metal is laminated on the catalyst, metal bonding is desirable. Examples of the metal include chromium, gold, and platinum.

  As shown in FIG. 3, a main shaft 160 having a circular cross section is vertically provided above the tub container 150, and the main shaft 160 is rotatably held by a sleeve 161 in a vertical posture. The main shaft 160 is rotated by a drive motor 171 as a first drive unit. The sleeve 161 is moved up and down by a drive part 172 such as a drive cylinder or a ball screw as a second drive means, and the main shaft 160 is moved forward and backward with respect to the catalyst pad 155 accordingly. At the lower end of the main shaft 160, a polishing head 163 is provided. The workpiece W is held on the lower surface of the polishing head 163. The polishing head 163 is configured to be able to hold the workpiece W, and also functions as a holder as a first holding unit. The driving parts 172 such as the main shaft 160, the driving motor 171, and the driving cylinder are provided on the base 110 or above.

  As shown in FIG. 2, a main drive unit PD is provided between the left and right flat processing units SP1 and SP2. FIG. 5 shows details of the main drive unit PD. As shown in FIG. 5, the main drive unit PD includes a bracket plate 181 provided on the base 110 in a vertical posture, and a shaft 190 extending vertically in the bracket plate 181 includes a bearing member 191 and a bearing member 191. By 192, it is held rotatably. An output shaft 182 a of a drive motor 182 provided in a vertical direction is inserted and coupled to the center of the lower end of the shaft body 190 along the bracket plate 181.

  As shown in FIG. 5, one ends of a pair of link plates 183 and 184 extending horizontally in the left-right direction are connected to the outer periphery of the intermediate portion of the shaft body 190 so as to be relatively rotatable. The link plate 183 connected to the lower side of the shaft body 190 is bent upward on the way, and the other end is connected to the support surface plate 140 of the flat processing portion SP1 so as to be relatively rotatable via the connection shaft 183a. (See FIG. 2). On the other hand, the link plate 184 connected to the upper side of the shaft body 190 is bent downward in the middle, and the other end of the link plate 184 is connected to the support surface plate 140 of the flat processing portion SP2 so as to be relatively rotatable via the connection shaft 184a. Are linked. Here, the upper surfaces of the support surface plates 140 of the flattened portions SP1 and SP2 are located on the same horizontal plane.

  As shown in the enlarged view of FIG. 5, the intermediate portion of the shaft body 190 has the shaft cores C1 and C2 of the shaft portions 193 and 194 to which the link plates 183 and 184 are connected, respectively. It is eccentric from the output shaft 182a of the motor 182). That is, the shaft cores C1 and C2 of the shaft portion 193 to which the link plate 183 is connected and the shaft portion 194 to which the link plate 184 is connected are spaced apart from each other by the same amount d in the radial direction from the shaft center C of the shaft body 190. It is located at a 180-degree symmetric position.

  Therefore, when the shaft 190 is rotated about the axis C by the drive motor 182, the axes C1 and C2 of the shafts 193 and 194 are turned around the axis C of the shaft 190. Along with this, each support surface plate 140 is reciprocated between the distances (amplitudes) 2d in opposite phases on the same straight line via the link plates 183 and 184. At this time, an example of the reciprocating movement is 2d = 3 mm, and the rotation speed of the shaft 190 (the reciprocating vibration frequency of the support platen 140) is 500 rpm. The value of the distance 2d is not limited to 3 mm, and may be an arbitrary value such as 10 mm.

  When flattening the lower surface (working surface) of the workpiece W with the flattening apparatus having such a structure, the gas necessary for the catalytic reaction or the gas required for the catalytic reaction is placed in the tub 150 on the left and right support platens 140. A liquid, for example, in the case of a liquid, is filled with a liquid containing at least one of hydrogen fluoride (HF), a water component, a hydrogen peroxide component, and a sulfuric acid component, and is processed by a driving part 172 (see FIG. 3). W is brought close to or in contact with the catalyst pad 155. In this state, the support platen 140 and the tub container 150 provided thereon are linearly reciprocated in the horizontal direction along the rail 131 by the drive motor 182. Alternatively, the workpiece W may be rotated by rotating the main shaft 160 with the drive motor 171 (see FIG. 3).

  That is, the surface to be processed of the workpiece W and the catalyst pad 155 on which the catalyst layer in contact with the workpiece W is brought into contact with or in close proximity to each other, and then reciprocated relative to each other. At this time, the reciprocating movement is used not as a sub-machining such as oscillating but as a main machining which is responsible for a main machining rate. As a result, the surface to be processed of the workpiece W is flattened by the catalyst-based etching with high accuracy on the order of the atomic level. At this time, the support bases 140 of the left and right flat processing parts SP1 and SP2 are reciprocated (vibrated) in opposite phases on the same straight line, so that the vibrations of each other are canceled out and the vibrating force on the base 110 is reduced. It becomes sufficiently small and its vibration is prevented.

The first example of the light irradiation catalyst reference etching apparatus 100 according to the present invention configured as described above has the following advantages as compared with the conventional light irradiation catalyst reference etching apparatus.
2. Description of the Related Art Conventionally, a surface plate used for a light irradiation catalyst-based etching method is formed of a material having excellent transparency of ultraviolet light emitted from a light source of an ultraviolet irradiation unit, for example, quartz or the like. However, in recent years, UV lamps having a short wavelength of about 180 nm or about 250 nm have been used as the main output wavelength so that the light irradiation catalyst-based etching process can proceed at a higher speed. Along with the change of the output main wavelength, it is necessary to select a material that can transmit light of a short wavelength such as around 180 nm for the material of the surface plate portion that can transmit light, and the cost tends to increase. In addition, by using a short-wavelength UV lamp, even if quartz capable of transmitting ultraviolet light of a UV lamp near 180 nm is prepared, the light-transmittable surface plate is damaged by the light of the UV lamp. . Therefore, it is necessary to replace the platen, and the platen may become a consumable item.

  Further, in recent years, there has been a need to increase the size of a workpiece. For example, as the size of the workpiece has changed from 2 inches to 8 inches, it has been necessary to increase the size of the light-transmittable surface plate used for processing by four times. In the future, there is a high possibility that the workpiece will be larger in size, and a large-area quartz material that can transmit short-wavelength light is required. As the material such as quartz is a material corresponding to a short wavelength or has a larger area, the price of the material increases. In the case of a surface plate that can transmit short-wavelength light with a large area of quartz, processing technology such as advanced surface polishing and special jigs and equipment for manufacturing the surface plate are required. The cost tends to be high. If the surface plate capable of transmitting light does not transmit light so as to be uniform over the entire surface of the workpiece to be processed, it will adversely affect the flattening of the workpiece. Further, as the size of the workpiece increases, the area of the workpiece that comes into contact with the catalyst surface at one time tends to increase as compared with the case where a small workpiece such as 2 inches is used. With the increase in the contact area of the workpiece with the catalyst surface, it has become necessary to apply a high load to the surface plate in order to optimize the load per unit area when processing the workpiece. .

  As in the technique described in Japanese Patent Application Laid-Open No. 2012-64972 described in the Background Art, a head unit that holds a workpiece and a base plate that is larger than the head unit are provided, and the base plate is rotated. In the case of the conventional light irradiation catalyst-based etching method that is configured to allow the light transmitting platen to support and transmit power, a shaft such as a UV lamp that outputs light when the light transmitting platen rotates is used. In order to avoid contact, it was necessary to arrange at least at the center or at the outermost periphery. However, when trying to maintain a load per unit area with the increase in the size of the surface plate, it is necessary to apply a higher load to the light-transmittable surface plate than when the size of the workpiece is small, such as 2 inches. . In addition, since the size of the workpiece is larger than before, the moment load is also easily applied. When the size of the surface plate is increased while keeping the same thickness as that of the conventional one, the surface plate is made of, for example, quartz or sapphire, and thus has low strength and is easily broken. Therefore, it is necessary to increase the thickness of the platen so as not to damage the platen, leading to an increase in cost. Some surface plates cannot be technically produced depending on the thickness, size and shape, and the wavelength of light to be transmitted. Further, since the power of short-wavelength light is easily attenuated, the distance from the UV lamp to the workpiece is limited. Therefore, in the light irradiation catalyst-based etching apparatus, light from the ultraviolet irradiation part can be transmitted to the processing surface of the workpiece, and light can be transmitted, which can cope with an increase in cost that can be a consumable with sufficient strength. A good surface plate was needed.

  On the other hand, in the first example of the light irradiation catalyst-based etching apparatus 100 according to the present invention, the conventional platen made of quartz was reviewed in order to cope with a large size, load and short wavelength light. By forming the supporting platen 140 with SUS304, SUS316, or the like, the strength was secured and the thickness was maintained. In addition, as a measure for reducing consumable parts, the support surface plate 140 is made of a member that does not become a consumable part, and an ultraviolet transmitting member 157 is disposed so as to cover the slit groove 141 of the support surface plate 140 to transmit ultraviolet light. It was configured as follows. Thus, the support plate 140 can be replaced as a consumable component without using the support platen 140 as a consumable component. The light irradiation catalyst reference etching apparatus 100 configured as described above can secure the strength of the support base 140 while promoting the catalyst reference etching by the ultraviolet light irradiated by the UV lamp 125. Therefore, even if the total load of the members arranged above the support surface plate 140 increases, breakage of the support surface plate 140 can be suppressed.

  Further, the light irradiation catalyst reference etching apparatus 100 according to the present invention includes the above-mentioned support platen 140, tub container 150, ultraviolet transmitting member 157, and catalyst pad 155. In order to transmit the ultraviolet light to the workpiece, holes and openings for light transmission according to the averaging and flattening processing operations are formed in the support platen 140, the tub container 150, and the catalyst pad 155, so that the processing is performed. The transmission space necessary for the light to hit the workpiece was secured. By fitting an ultraviolet transmitting member 157 such as quartz, which is optimal for light transmission, into the transmission space, it is possible to prevent the liquid or gas stored in the tub 150 required for processing from flowing into the area such as the UV lamp from the processing area.

  Further, in the light irradiation catalyst-based etching apparatus 100 according to the present invention, the most suitable ultraviolet ray transmitting member 157 was selected in consideration of the cost, the chemical solution or gas used in the processing, the wavelength light to be transmitted, and the like. For example, it was configured using a quartz substrate flowing in a mass production process. A semiconductor-grade quartz substrate that guarantees light transmission can be used in a clean room and has a stable light transmission quality. It can be obtained at a lower cost than creating a dedicated UV transmitting member. The flatness is stable. Further, the quartz substrate is compatible with large diameters such as 300 mm. Quartz used in the ultraviolet transmitting member 157 is deteriorated by use of short-wavelength UV light. However, since the quartz substrate is inexpensive, it can be replaced at low cost. A substrate formed of sapphire or the like can be used for the transmitting portion depending on the compatibility between the transmitted wavelength light and the chemical or gas. The use of a substrate made of quartz or the like for the ultraviolet transmitting member 157 is apt to be broken because the substrate itself is thin, such as 1 mm, but the present invention receives the load on the support platen 140 so that the ultraviolet transmitting member 157 is not damaged. I have. Further, the tub container 150 is made of a material that is resistant to liquids and gases used in processing.

  Further, in the first example of the light irradiation catalyst reference etching apparatus 100 according to the present invention, the catalyst reference etching using electricity is also performed. In the first example of the light irradiation catalyst-based etching apparatus 100, a configuration relating to each electrode used when processing is performed by an electric action will be described. In the light irradiation catalyst reference etching apparatus 100, an electrode for plating, an electrode for electrolytic polishing, an electrode for UV electricity, and the like are arranged. FIG. 6 is a diagram showing each electrode unit in the first example of the light irradiation catalyst-based etching apparatus.

  As shown in FIG. 6, the polishing head 163 is provided with a head-side DC voltage power supply section 165 used when irradiating ultraviolet rays (UV), and a head-side auxiliary electrode 164a used during plating or electrolytic polishing. Can be The tub container 150 is provided with the reference electrode 103 and the conducting part 101.

  Inside the vat container 150, the catalyst pad 155 is fixed to the bottom plate 151 of the vat container 150 by an insulating polycarbonate screw 102 in a state where a washer constituting the energizing unit 101 is in contact with the surface of the catalyst pad 155. I have. The surface of the catalyst pad 155 becomes a working electrode 155b by the electricity from the current supply unit 101. On the tub container 150 side, since the processing solution is stored in the tub container 150, power is supplied between the working electrode 155b, the head-side auxiliary electrode 164a, and the reference electrode 103, which are the surfaces of the catalyst pad 155. Thus, it is possible to form plating on the working electrode 155b and to suppress electrolytic polishing. This makes it possible to maintain the catalytic activity on the catalyst surface. Therefore, it is easy to form, for example, a nickel catalyst layer made of electrolytic plating on the surface of the catalyst pad 155.

  In the polishing head 163, a current flows between the head-side auxiliary electrode 164a and the working electrode 155b that is the surface of the catalyst pad 155 in a state where the polishing head 163 is placed in the processing solution stored in the tub container 150, Electropolishing and plating can be performed on the catalyst surface. As a result, the catalytic activity on the catalyst surface is maintained and the catalyst can be regenerated, so that the sustainability of the catalyst-based etching on the contact surface between the catalyst and the workpiece W is improved.

  For example, in the case of ultraviolet (UV) light, a head side DC voltage power supply section 165 for supplying a DC voltage power supply (+) is provided in the workpiece holding section 166 of the polishing head 163. A workpiece W (e.g., a substrate, an epitaxially grown film or a film formation surface, a three-element mixed crystal, a four-element mixed crystal, In, Al, Si, C, Ga, N (A workpiece including at least one of the components O, Zn, and Si, GaN, gallium oxide, diamond, and aluminum gallium nitride). Then, an energizable liquid or gas used in the light irradiation catalyst reference etching method is arranged below the workpiece W, and a catalyst pad 155 with which the workpiece W abuts is arranged below the liquid or gas. A cathode is provided between the ultraviolet transmitting members 157 from below the catalyst pad 155. As the cathode, for example, platinum or the like that is resistant to light such as ultraviolet light (UV) necessary for processing a workpiece, or a cathode plated with platinum or gold is used. The size of the cathode line is not particularly limited as long as the diameter is, for example, φ1 to φ0.3 mm and the line does not break and can transmit light such as ultraviolet rays (UV) required for processing. The cathode may be made of a thin film of several μm or the like like a wiring pattern. According to the size of one or a plurality of slit grooves 155a of the catalyst pad 155, a cathode line or a membrane can be appropriately selected. A DC voltage power supply (-) may be electrically connected to the cathode. The head-side DC voltage power supply unit 165 is not particularly limited in parts as long as it is resistant to light, liquid, and gas used in processing and has a low electric resistance value. The specific bias voltage to be used is 2 V to more than ten volts when the workpiece W is SiC. When the workpiece W itself has resistance, the electrode is ideally brought into contact with the entire back surface of the workpiece W. This is because, when the workpiece W itself has a resistance, the net bias voltage decreases on the processing surface remote from the electrode, and the processing speed decreases.

  In the present invention, the rate of oxidation of the surface of the workpiece W is rate-limiting. It is preferable to perform the light irradiation catalyst-based etching method under a condition that satisfies the relationship “the flat processing speed of the surface to be processed ≧ the oxidation speed of the surface to be processed by electric action or light irradiation”. Finishing is performed by blocking, retreating or turning off light effective for processing of the workpiece such as ultraviolet light used in the light irradiation catalyst-based etching method, and then, on the surface of the workpiece W, the surface layer burned by light is subjected to the catalyst-based etching method. It is preferable to remove by finishing processing such as.

  Here, in the case of a configuration in which reciprocation is performed with a small amplitude as in the first apparatus example of the light irradiation catalyst-based etching apparatus 100, the movable range is narrow. As shown in FIG. 6, unless the polishing head 163 is provided with a head-side auxiliary electrode 164a, the polishing head 163 in the processing solution should be avoided while the support platen 140 moves with a large swing. Then, an auxiliary electrode (not shown) must be taken in and out of the solution, and plating and electrolytic polishing must be performed, which is difficult as an apparatus configuration. On the other hand, as shown in FIG. 6, the auxiliary electrode is provided on the head-side auxiliary electrode 164a of the polishing head 163. Plating and electrolytic polishing can be performed. When performing either plating or electrolytic polishing, a method in which the workpiece and the catalyst pad are brought into contact with each other and a method in which the height of the catalyst pad from the catalyst surface is adjusted to perform plating or electrolytic polishing can be considered. . At the time of plating or electrolytic polishing using the head-side auxiliary electrode 164a of the polishing head 163, uniform plating can be obtained by performing plating while performing an averaging operation. The shape of the head-side auxiliary electrode 164a (for plating or electrolytic polishing) is formed in a tapered shape at the outer peripheral portion, a gas that inhibits the reaction is released, a groove for stirring a fluid necessary for the reaction is provided, and a polishing head is formed. By increasing the rotation speed, plating or electropolishing can be performed while oxygen or hydrogen generated at the time of plating or electropolishing on the catalyst surface of the catalyst pad is directed toward the outer periphery of the auxiliary electrode portion. If the area of the surface of the catalyst layer is made smaller than the surface of the workpiece W, the position and residence time of the small catalyst pad 155 with respect to the surface of the workpiece W are controlled to reduce the local processing amount on the surface of the workpiece W. Can be controlled. That is, local processing by numerical control can be performed.

(Example of Second Device of Light Irradiation Catalyst-Based Etching Device)
A second example of the light irradiation catalyst-based etching apparatus will be described. FIG. 7 is a perspective view illustrating a second example of the light irradiation catalyst-based etching apparatus 200. FIG. 8 is a perspective view of a second example of the light irradiation catalyst-based etching apparatus 200 as viewed from below. FIG. 9 is a partial cross-sectional view mainly showing the configurations of the support surface plate 210 and the tub container 220 of the second example of the light irradiation catalyst-based etching apparatus 200.

  As shown in FIGS. 7 to 9, the light irradiation catalyst reference etching apparatus 200 of the second apparatus example is a state in which the workpiece W as the workpiece and the catalyst layer 230 of the catalyst pad 240 are immersed in a gas atmosphere or liquid. Is a structure for processing a workpiece. The light irradiation catalyst-based etching apparatus 200 includes a support platen 210 (platen), a tub container 220 for holding water 201 as an example of gas and liquid, and a catalyst layer 230 having a catalyst substance on at least the surface thereof. The catalyst pad 240 placed in the tub container 220 and immersed in the water 201 while holding the workpiece W is placed in the tub container 220 in a state of contacting or approaching the catalyst layer 230. The polishing head 260 includes a polishing head 260, a driving mechanism 270 that moves the catalyst pad 240 and the polishing head 260 relative to each other while contacting or approaching the polishing head 260, and a UV lamp 225 (ultraviolet irradiation unit).

  Depending on the type of the workpiece (for example, SiC or the like), between the plurality of through holes 221a (see FIG. 9) of the tub 220 through which the ultraviolet light passes and the plurality of through holes 241 (see FIG. 9) of the catalyst pad 240. A cathode, a DC voltage power supply (+) of the polishing head 260, a workpiece holding section for holding the polishing head 260 disposed on the back surface of the workpiece, a workpiece W, and a solution used for processing. A cathode provided between the plurality of through holes 221a of the vat container 220 through which ultraviolet light passes and the plurality of through holes 241 of the catalyst pad 240, and a DC voltage power supply (-) connected to the cathode can be electrically connected. It is good also as a state.

  The support surface plate 210 is formed of a material that is not suitable for transmitting light having a wavelength effective for processing a workpiece. Specifically, as shown in FIGS. 7 and 8, the support surface plate 210 is formed in a disk shape and is made of a material that does not transmit ultraviolet light. The support platen 210 is formed of a metal material, a material having resistance to ultraviolet light and having strength, or a material which has been subjected to a surface treatment resistant to ultraviolet light. For example, the support surface plate 210 is formed of a metal such as SUS (stainless steel) which does not transmit ultraviolet light, a ceramic which does not transmit ultraviolet light, a resin which does not transmit ultraviolet light, or a composite material thereof. In order to make the surface more resistant to ultraviolet light, liquid or gas, the surface is surface-treated with a film formed or plated of platinum group or gold, or a resistant film such as Teflon (registered trademark) coat. It may be. Therefore, the strength of the support platen 210 is ensured as compared with the case where the support platen 210 is entirely made of quartz or the like for transmitting ultraviolet light. It is even more preferable that the support platen 210 is formed of SUS304, SUS316, or the like, which is suitable for use in a clean room and resistant to ultraviolet rays.

  As shown in FIG. 8, the support surface plate 210 has a plurality of through-hole groups 211 through which the ultraviolet light emitted from the UV lamp 225 passes. The plurality of through-hole groups 211 are formed by an aggregate having a circular outer shape formed by the plurality of through-holes 211a (surface plate side through-opening). The plurality of through-holes 211a are formed at positions where ultraviolet light from a UV lamp 225 (described later) disposed below the support platen 210 is transmitted, and are provided from the UV lamp 225 (described below) during a catalyst-based etching operation. Is formed at a position through which the ultraviolet light is transmitted. The plurality of through-hole groups 211 are arranged at predetermined positions radially outward from the center of the support platen 210 and spaced apart in the circumferential direction. The plurality of through holes 211a are arranged such that the three adjacent through holes 211a are located at the vertices of an equilateral triangle when viewing the three adjacent through holes 211a. The plurality of through holes 211a constituting the through hole group 211 have a diameter R of, for example, 5 mm, and an interval L between adjacent through holes 211a is 10 mm.

Below the support platen 210, a UV lamp 225 (ultraviolet irradiation unit) that emits ultraviolet light and is used for catalyst-based etching is disposed.
The upper end of the lower rotation shaft 271 of the drive mechanism 270 is connected to the center of the lower surface of the support surface plate 210. The support platen 210 is rotatable when the lower rotation shaft 271 rotates.
On the upper surface of the support platen 210, a tub container 220 (tub unit) for storing a circular liquid that opens upward is mounted. The tub container 220 is detachable from the support platen 210.

  The tub container 220 is open at the top, and is arranged above the support platen 210. The tub container 220 includes a disc-shaped bottom plate 221 having a plurality of through holes 221a (bottom plate side through-opening) through which ultraviolet light passes, and a cylindrical peripheral wall portion 222 rising from the periphery of the bottom plate 221. The tub container 220 is formed in a tub shape capable of holding a processing solution or gas. The tub 220 is made of, for example, a material such as a resin, a metal, a ceramic, or a glass-based metal oxide having a low transmittance of ultraviolet light. The plurality of through-holes 221 a of the tub container 220 are provided at positions corresponding to the plurality of through-holes 211 a formed in the support surface plate 210. In addition, the support platen 210 has a portion through which ultraviolet light from the UV lamp 225 does not transmit, and prevents irradiation of ultraviolet light to a portion that does not want to transmit ultraviolet light, thereby minimizing deterioration of the tub container 220 and the like. Suppress.

  An ultraviolet transmitting member 212 is attached to the lower side of the bottom plate 221 in the tub container 220. The ultraviolet transmission member 212 is a transmission member that can transmit ultraviolet light from the UV lamp 225 disposed below the support platen 210. In the present embodiment, the ultraviolet transmitting member 212 is made of, for example, quartz.

  The processing solution is stored in the tub container 220. In the second example of the light irradiation catalyst reference etching apparatus 200 of the present embodiment, for example, water is used as a processing solution, so that hydrolysis is caused on the processing surface of the workpiece. When performing catalyst-based etching by causing hydrolysis, with the processing solution interposed between the processing surface of the processing object and the catalyst, while contacting the processing object with the catalyst immersed in the processing solution, The relative movement generates a decomposition product by a hydrolysis reaction on the processing surface of the workpiece. Then, the processing surface of the workpiece is processed by dissolving the decomposition product into the processing solution.

  Here, if an aqueous hydrofluoric acid solution is used as the processing solution, if the ultraviolet transmitting member 212 described later is made of, for example, quartz, the aqueous hydrofluoric acid solution dissolves the quartz. Therefore, in the case of using the ultraviolet transmitting member 212 made of quartz in the light irradiation catalyst reference etching apparatus 200 that irradiates ultraviolet light, a hydrofluoric acid aqueous solution cannot be used as a processing solution. Therefore, in this embodiment, water is used as the processing solution.

  Since the hydrofluoric acid aqueous solution does not dissolve the sapphire glass, the hydrofluoric acid aqueous solution may be used as the processing solution by forming the ultraviolet transmitting member 212 with, for example, sapphire glass. However, when the ultraviolet transmitting member 212 is made of sapphire glass, sapphire glass does not transmit ultraviolet light of a specific short wavelength as compared with quartz, so that if the wavelength is too short, it may not be possible to cope with ultraviolet light. Therefore, it is necessary to use a UV lamp 225 that emits light having a wavelength that can be transmitted.

  The ultraviolet transmitting member 212 is attached to the lower surface of the bottom plate 221 of the tub container 220 so as to close the plurality of through holes 221 a (the bottom plate side through-opening) of the bottom plate 221 of the tub container 220. In a state where the ultraviolet ray transmitting member 212 is arranged below the bottom plate 221 of the tub 220, the periphery of the ultraviolet ray transmitting member 212 is subjected to a water stopping process in a water stopping section 212a. As a result, the ultraviolet transmitting member 212 is attached to the bottom plate 221 in the water stop processing section 212a in a state where the water stop processing has been performed.

  Here, regarding the disposition of the water stopping section 212a, the plurality of through-holes 221a of the support platen 210 are provided in portions of the ultraviolet transmitting member 212 that do not correspond to the water stopping section 212a. That is, the water stop processing unit 212a is arranged at a position where the ultraviolet light from the UV lamp 225 does not reach. Therefore, it is possible to suppress the deterioration caused by the ultraviolet light emitted from the UV lamp 225 in the water stop processing unit 212a.

  As shown in FIG. 9, a catalyst pad 240 as an example of a pad portion having a catalyst layer 230 formed with a predetermined thickness by sputtering or the like is provided on the entire upper surface of the bottom plate 221 of the tub container 220, as shown in FIG. I have. The catalyst pad 240 has a catalyst layer 230 for flattening the surface of the workpiece W by catalyst-based etching. The catalyst pad 240 is disposed above the bottom plate 221 in the tub 220. A plurality of through holes 241 are formed in the catalyst pad 240.

  The plurality of through holes 241 formed in the catalyst pad 240 are provided at positions corresponding to the plurality of through holes 221a formed in the tub container 220 and the plurality of through holes 211a formed in the support platen 210. That is, the plurality of through-holes 221a formed in the tub 220, the plurality of through-holes 211a formed in the support platen 210, and the plurality of through-holes 241 formed in the catalyst pad 240 continuously penetrate vertically. It is configured to be able to transmit ultraviolet light from the UV lamp 225. It is preferable that the catalyst pad 240 has resistance to a water component or an oxygen component of 90 degrees or less. The through holes 241 do not need to be all the same in size, pitch, and the like, and do not need to be continuously provided. For example, when it is difficult to remove the support surface plate 210, the plurality of through holes 241 formed in the catalyst pad 240 may be formed according to the shape of the workpiece according to the processing operation. It may be used after being optimized and attached to a support platen 210 provided with a plurality of through holes 211a whose dimensions and pitch are adjusted. For example, when it is desired to transmit only part of the ultraviolet light (UV), the through hole 241 of the catalyst pad 240 may be optimized. The same applies to the plurality of through holes 221a formed in the tub container 220.

  As a material of the catalyst pad 240, a rubber, resin, ceramics, glass, metal, or the like having resistance to a processing solution or gas is used. A transition metal such as Pt can be used as the catalyst. When metal is laminated on the catalyst, metal bonding is desirable. Examples of the metal include chromium, gold, and platinum. Here, the tub container 220 may store gas.

  As shown in FIG. 7, the upper rotation shaft 272 of the drive mechanism 270 is suspended above the tub container 220. The upper rotation shaft 272 is arranged on the upper side of the tub container 220 at a position radially offset from the center of the bottom plate 221 of the tub container 220. The upper rotation shaft 272 is rotatably held in a vertical posture with respect to the sleeve 261 as shown in FIG. The upper rotation shaft 272 is rotated by a driving motor 273 as first driving means. The sleeve 261 is moved up and down by a drive part 274 such as a drive cylinder or a ball screw as a second drive means. In response, the upper rotation shaft 272 is moved forward and backward so as to move closer to or away from the catalyst pad 240. Moved in the direction. A polishing head 260 is provided at a lower end of the upper rotation shaft 272. The workpiece W is held on the lower surface of the polishing head 260. The polishing head 260 is configured to be able to hold the workpiece W, and also functions as a holder as first holding means.

  Next, operation control of the polishing head 260 will be described. FIG. 10 is a diagram illustrating a control in which the operation of the catalyst-based etching is started after the workpiece W held by the polishing head 260 comes into contact with or approaches the surface of the catalyst pad 240.

  The upper rotation shaft 272 and the polishing head 260 are connected by a tilt movable mechanism 262 as shown in FIG. The tilt movable mechanism 262 is movable in a range including a state where the surface of the catalyst pad 240 and the surface of the workpiece W are parallel, and a state where the surface of the catalyst pad 240 and the surface of the workpiece W are not parallel. As a result, at least one of the catalyst pad 240 and the workpiece W can be tilted. In the present embodiment, since the tilt movable mechanism 262 can tilt the polishing head 260 with respect to the horizontal direction within a range of 360 °, the workpiece W can be tilted with respect to the horizontal direction within a range of 360 °. It is possible to tilt.

  In the surface direction of the surface of the catalyst pad 240 or the surface of the workpiece W, for example, the difference H between both end portions on the surface of the catalyst pad 240 or the surface of the workpiece W is 0.01 mm or more. It is possible to tilt at least one of the catalyst pad 240 and the workpiece W to a certain extent. The tilt movable mechanism unit 262 is, for example, at least one of the catalyst pad 240 and the workpiece W such that the tilt angle α of the surface of the workpiece W with respect to the surface of the catalyst pad 240 is relatively 0.03 degrees or more. Can be tilted. Thus, the surface of the workpiece W and the surface of the catalyst pad 240 can be made to follow the tilt movable mechanism 262. Therefore, when the surface of the workpiece W abuts or approaches the surface of the catalyst pad 240, the surface followability of the workpiece W can be improved. The catalyst pad 240 is provided with a catalyst layer for removing only a portion in contact with or close to the surface of the workpiece W by catalyst-based etching (catalyst-based reaction).

  When performing the flattening process required for the catalyst-based etching, as shown in FIG. 10, the rotation of the upper rotation shaft 272 is stopped and the lower rotation shaft 271 (see FIG. 7) is stopped and supported. With the surface plate 210 stopped, the upper rotating shaft 272 is lowered by lowering the sleeve 261 by the driving part 274 as the second driving means, and the surface of the workpiece W is placed on the surface of the catalyst pad 240. Contact or approach so that the film does not peel off. After that, the upper rotation shaft 272 and the lower rotation shaft 271 are rotated by the drive motor 273 as the first drive means to rotate the support platen 210, so that catalyst-based etching (catalyst-based reaction) is performed. The necessary flattening process is executed by a flattening process execution unit (not shown). Thus, in a state where the catalyst pad 240 is stopped, the surface of the workpiece W can be brought into contact with or close to the surface of the catalyst pad 240 so that the catalyst film is not peeled off. Peeling of the catalyst layer is suppressed. Therefore, since the peeling of the catalyst layer on the surface of the catalyst pad 240 can be suppressed, the processing quality of the workpiece W can be improved.

Conventionally, for example, when the surface of the workpiece W is brought into contact with or close to the surface of the catalyst pad 240 while the surface of the workpiece W is processed by the main processing operation, the workpiece W and the catalyst pad 240 are processed. The end of the workpiece W comes into contact with the catalyst pad 240 due to the influence of the inclination angle of the workpiece W, and the catalyst portion of the catalyst pad 240 hit by the end of the workpiece W Depending on the state of the chamfer, as shown in FIG.
As a countermeasure, the upper surface of the workpiece W required for processing is brought into contact with or close to the surface of the catalyst pad 240, and then the upper rotation shaft 272 is rotated by the drive motor 273 as the first drive means. By performing the main processing operation of rotating the support platen 210 by rotating the lower rotation shaft 271, processing in which the catalyst of the catalyst pad 240 does not peel off can be performed as compared with the related art.

  In addition, the risk of the catalyst layer 230 peeling off during mass production can be physically suppressed. If the workpiece W is attached to the surface of the catalyst pad 240 from which the catalyst layer 230 has been peeled off by the water sticking phenomenon during the processing of the catalyst reference etching, if the material of the catalyst pad 240 is, for example, rubber, the processing is performed. The water sticking phenomenon between the workpiece W and the catalyst pad 240 and the gripping force generated between the workpiece W and the catalyst pad 240 between the polishing pad 260 holding the workpiece W and the workpiece. There is a risk that the workpiece W may fly away to the outer peripheral portion and be damaged by the processing operation of the catalyst-based etching apparatus 200. However, if the catalyst layer 230 does not peel off, the risk can be reduced.

  Normally, the surface of the workpiece W is brought into contact with or close to the catalyst pad 240 while the surface of the workpiece W is being processed by the main processing operation. The possibility that the workpiece W sticks to the catalyst pad 240 due to the water sticking phenomenon is theoretically lower than the case where the working operation is performed after the contact is made. The risk that the workpiece W stuck to the catalyst pad 240 comes off from the retainer (holding portion) of the polishing head 260 and is damaged may be caused by applying the surface of the workpiece W to the catalyst pad 240 while performing the processing in the main processing operation. The contact or proximity is preferable because the dynamic frictional resistance is generated between the workpiece and the pad, and is lower than the static frictional force. However, according to the present invention, the catalyst on the catalyst pad 240 is prevented from peeling off by performing the processing operation after the surface of the workpiece W is brought into contact with the catalyst pad 240. Peeling off the catalyst from the catalyst pad is a particular problem in catalyst-based etching.

In addition, the processing operation of the main processing performed on the surface of the workpiece W is the minimum operation necessary for achieving the polishing processing.
In the present embodiment, for example, the processing operation of the main processing is an operation that mainly determines the processing rate, and in the case of the catalyst-based etching apparatus of FIG. In an atmosphere, in a state where the workpiece W and the catalyst pad 240 are in contact with or close to each other, the upper rotation shaft 272 is rotated by the drive motor 273 as the first drive unit, and the lower rotation shaft 271 is This is an operation of rotating the support platen 210 by rotating it. On the other hand, the machining operation of the sub machining is a machining operation in a swing operation. The processing operation of the sub-processing is to perform averaging together with the processing operation of the main processing, so that the PV value (Peak to Valley: maximum error) and the RMS value (Root Mean Square: root mean square) of the processing surface of the workpiece W are obtained. (Square root). The processing operation of the main processing is a processing operation in which the minimum required processing in the catalyst-based etching is realized only by the processing operation of the main processing, without the processing operation of the sub-processing.

  In the light irradiation catalyst reference etching apparatus 200 configured as described above, the catalyst pad 240 is a disk-shaped rotating platen, and the polishing head 260 and the catalyst holding the workpiece W having an area smaller than the platen. The pad 240 is rotated at a predetermined speed on rotation axes that are parallel and eccentric to each other. The polishing head 260 can adjust the contact pressure of the workpiece W with respect to the catalyst layer 230 of the catalyst pad 240 by adjusting the load. Further, it is preferable that at least one of the catalyst pad 240, the platen, the tub, the fluid unit, and the polishing head 260 has a temperature control function, because the processing temperature can be maintained at a predetermined temperature. For example, when the workpiece W is made of SiC, the processing is performed at a temperature of 70 degrees in the catalyst-based etching using water (also referred to as water CARE), so that the processing rate is higher than when processing using water at normal temperature. Is improved. If the area of the surface of the catalyst layer 230 is smaller than that of the surface of the workpiece W, the position and the residence time of the small catalyst pad 240 with respect to the surface of the workpiece W are controlled, and the surface of the workpiece W is controlled. The local processing amount can be controlled, that is, local processing can be performed by numerical control.

  The photoirradiation catalyst-based etching apparatus 200 of the second apparatus example is configured such that water molecules are dissociated, adsorb and cut back bonds between an oxygen element constituting a solid oxide film and other elements, and a decomposition product by hydrolysis is converted into water. The elution is performed to process the surface of the workpiece W. Further, a water circulation system 290 is provided to purify the water 201 in the tub container 220 and keep the water level constant. The water circulation system 290 includes a supply pipe 291, a drain pipe 292, a processing liquid purifier (not shown), a buffer tank, a pump, a waste liquid section, and the like.

[Cleaning device]
Next, a cleaning device capable of executing the cleaning performed by the first cleaning unit 13 and the second cleaning unit 17 in FIG. 1 will be described.
The cleaning device can be realized by changing the catalyst in the basic configuration of the light irradiation catalyst reference etching devices 100 and 200. For example, a cleaning device that removes Pt attached to a workpiece can be realized by performing etching using Ni as a catalyst instead of performing etching using Pt as a catalyst in the light irradiation catalyst-based etching devices 100 and 200. In this case, Pt is removed from the surface of the workpiece. Ni adheres to the surface of the workpiece from which Pt has been removed.

  The device that performs the processing performed by the latent scratch removing unit 12 and the device that performs the process performed by the first cleaning unit 13 may be configured by the same device or by different devices. Is also good. Similarly, the apparatus for performing the processing performed by the above-described surface finishing means 16 and the apparatus for performing the processing performed by the second cleaning means 17 may be constituted by the same apparatus or may be constituted by different apparatuses. May be. In this case, even if the catalyst is changed by introducing the cleaning liquid into the tub containers 150 and 220 after performing the catalyst-based etching process in the light irradiation catalyst-based etching apparatuses 100 and 200, the catalyst may be changed. Good.

(Modifications of Light Irradiation Catalyst Reference Etching Apparatus and Workpiece Processing System)
The above-described light irradiation catalyst reference etching apparatus may have the following configuration in addition to the configuration of the above light irradiation catalyst reference etching apparatuses 100 and 200. The workpiece processing system 10 may also have the following configuration. It should be noted that the contents described below include some contents that are the same as the contents described above.

  For example, a photocatalyst based etching apparatus uses a chemical-resistant workpiece storage cassette and a case when cleaning contaminants that adhere to the cassette (preferably, since the cleaning method is easily established, the cassette and the case are made of one material, and are submerged in water. When transporting by means of an air vent on the case ceiling), a cassette mounting part used in the process of the catalyst-based etching method, a suction type handling part to prevent the workpiece from drying before cleaning, and a UV lamp Surveillance camera to prevent UV light from entering the eyes directly, monitor to prevent UV light from the UV lamp from entering the eyes directly, workpiece holder, catalyst pad holder, head Auxiliary electrodes for plating and electrolytic polishing, polishing heads with auxiliary electrodes for plating and electrolytic polishing, and energizable polishing heads for UV lamps It may be.

  Further, the light irradiation catalyst-based etching apparatus includes a workpiece holding unit configured to hold a workpiece (eg, a substrate), a catalyst pad holding unit configured to hold a catalyst pad, and a processing unit. A drive unit configured to relatively move the workpiece holding unit and the catalyst pad holding unit in a state where the processing area of the workpiece and the catalyst are in contact with each other may be provided. The catalyst pad holding section may include an elastic member for holding the catalyst pad. The catalyst pad holding section has a plurality of grooves and holes configured to allow the processing liquid to move between the catalyst pad holding section and the work piece when the catalyst pad and the work piece are in contact with each other. May be.

  Further, the photoirradiation catalyst-based etching apparatus may include a processing liquid temperature adjustment unit that adjusts the temperature of the processing liquid to a predetermined temperature within a range of 10 degrees or more and 90 degrees or less. By adjusting the temperature of the processing liquid, a processing rate of a workpiece such as an oxide or SiC can be improved, and catalyst poison such as a Si component can be removed. Further, the catalyst-based etching apparatus may include a processing liquid supply unit having a supply port for supplying the processing liquid onto the processing target region of the workpiece. The processing liquid supply unit may be configured such that the supply port moves together with the catalyst holding unit.

  Further, the light irradiation catalyst reference etching apparatus may include an electrolytic regeneration unit configured to remove an etching product on the catalyst surface by using an electrolytic action. The electrolytic regeneration section has an electrode configured to be electrically connectable to the catalyst, and by applying a voltage between the catalyst and the electrode, an etching product attached to the surface of the catalyst is subjected to electrolytic action. It may be configured to remove.

  Further, the light irradiation catalyst reference etching apparatus may include a plating regeneration unit configured to regenerate the catalyst. The plating regenerating section has an electrode configured to be electrically connectable to the catalyst. The plating regenerating section is configured to immerse the catalyst in a nickel salt solution such as nickel sulfate (hydrate). The surface of the catalyst may be regenerated by applying a voltage to the catalyst. Alternatively, the catalyst may be used while chemically dissolving the surface. The catalyst may be brought into a positive potential state with respect to the processing liquid to dissolve the transition metal film on the processing surface.

  Further, the light irradiation catalyst-based etching apparatus is a monitoring unit that monitors the etching processing state of the processing target area of the processing target, at least in the processing conditions of the processing target being processed based on the etching processing state obtained by the monitoring unit A control unit configured to control one parameter, or a potential adjustment unit having a reference electrode, wherein the catalyst and the reference electrode are electrochemically connected to each other via a treatment liquid, and the potential of the surface of the catalyst is adjusted. It may include a potential adjustment unit configured to control. The monitoring unit includes a torque current monitoring unit that monitors an etching process state based on a torque current of the driving unit when the catalyst holding unit and the workpiece holding unit relatively move, and a monitoring unit that processes the workpiece. Light is directed toward the region, and the reflected light reflected on the surface of the processed region of the workpiece or reflected after transmitting through the workpiece is received, and the etching process state is determined based on the received light. An optical monitoring unit for monitoring may be provided.

  In addition, the light irradiation catalyst-based etching apparatus is configured to supply a treatment liquid through a catalyst cleaning nozzle or a catalyst holding unit configured to supply water and / or a chemical solution for cleaning the surface of the catalyst to the surface of the catalyst. A processing liquid supply unit having a supply port for supplying the processing object onto the processing area may be provided.

Further, the workpiece processing system may include a workpiece cleaning unit configured to clean the workpiece, and a workpiece transport unit that transports the workpiece.
Further, the workpiece processing system, the workpiece measuring unit configured to measure the surface state, thickness or weight of the processing area of the workpiece after processing by the workpiece processing apparatus, A reprocessing control unit configured to reprocess the workpiece after being processed by the workpiece processing apparatus when a measurement result of the workpiece measurement unit does not satisfy a predetermined standard. Is also good. Further, the workpiece transfer section may be configured to be able to separately transport the workpiece in a wet state and the workpiece in a dry state.

  In addition, the workpiece processing system may include a film forming apparatus configured to perform a film forming process on the workpiece. The film forming apparatus may include at least one of a chemical vapor deposition (CVD) apparatus, a sputtering apparatus, a plating apparatus, and a coater apparatus.

  According to the light irradiation catalyst-based etching apparatus of the present embodiment as described above, the following effects can be obtained.

  (1) The light irradiation catalyst-based etching apparatuses 100 and 200 are used for catalyst-based etching, and are UV lamps 125 and 225 that emit ultraviolet light, and a plurality of slits through which ultraviolet light emitted from the UV lamps 125 and 225 passes. Support plats 140 and 210 having a groove 141 or a plurality of through holes 211a and formed of a material that does not transmit ultraviolet light, and a plurality of support plats disposed above the support plats 140 and 210 and through which the ultraviolet light passes. Vat containers 150 and 220 provided with bottom plates 151 and 221 having slit grooves 151a or a plurality of through holes 221a, and ultraviolet rays arranged in vat containers 150 and 220 so as to cover the plurality of slit grooves 151a or the plurality of through holes 221a. The permeating members 157 and 212 and the catalyst pump disposed above the bottom plates 151 and 221 in the tub containers 150 and 220 are provided. It includes a de-155,240, a. Thus, the strength of the supporting platens 140 and 210 can be ensured while promoting the catalyst-based etching by the ultraviolet light emitted from the UV lamps 125 and 225.

  (2) Further, the support platens 140 and 210 are formed of a metal material, a material having resistance to ultraviolet light and having strength, or a material which has been subjected to a surface treatment having resistance to ultraviolet light. Thereby, the strength of the support bases 140 and 210 can be secured. Therefore, even if the total load of the members arranged above the support surface plates 140 and 210 increases, breakage of the support surface plates 140 and 210 can be suppressed. Due to the increase in the contact area at the time of the catalyst-based etching processing accompanying the increase in the diameter of the workpiece W, even if the load applied during the processing increases for the purpose of maintaining and increasing the load per unit area, the support surface plate 140 , 210 can be suppressed. As a result, the load increases due to the effect of increasing the size of the surface plate portion due to the increase in the size of the workpiece. However, breakage of the support surface plates 140 and 210 due to the load from the moment direction can be suppressed.

  (3) The tub containers 150 and 220 are detachable from the support platens 140 and 210. Therefore, handling of the tub containers 150 and 220 is easy. Also, if there is space for attaching the tub containers 150 and 220 to the CMP polishing apparatus, the catalyzer pads 155 and 240 can be used in the catalyst-based etching using water by attaching the tub containers 150 and 220 to the polishing apparatus. It becomes possible to do. In the case where there is no hole for irradiating light from below on the support platens 140, 210, the catalyst pads 155, 240 need not have a penetrating groove.

  (4) Further, the ultraviolet transmitting members 157 and 212 are attached to the bottom plates 151 and 221 in the water stopping sections 157a and 212a in a state where the water blocking processing is performed. The groove 141 or the plurality of through-holes 211a are provided in portions of the ultraviolet transmitting members 157, 212 that do not correspond to the water stopping sections 157a, 212a. Therefore, it is possible to prevent the water stoppage processing units 157a and 212a from deteriorating due to the ultraviolet light emitted from the UV lamps 125 and 225.

In addition, the light irradiation catalyst reference etching apparatus 100 according to the present invention is not limited to the above-described embodiment, and can be appropriately changed.
For example, in the above-described embodiment, the cleaning method of the workpiece removes the harmful substance attached to the surface of the workpiece after performing the catalyst-based etching process, but is not limited thereto. The harmful substances adhering to the surface may not be those adhering in the catalyst-based etching process. In other words, the method for cleaning the workpiece can be applied to a case in which harmful substances attached to the surface of the workpiece are removed after not performing the catalyst-based etching process. For example, by using a method of cleaning a workpiece, it is possible to reduce components adhering to the surface of the workpiece that can be observed by measurement using a total reflection X-ray fluorescence spectrometer (for example, manufactured by Rigaku Corporation). Is possible. Cleaning can be performed while maintaining or improving the surface roughness Ra or the like.

  Further, in the above-described embodiment, in the first example of the light irradiation catalyst-based etching apparatus 100 shown in FIG. 2, the pair of support platens 140 are configured to reciprocate in opposite phases on the same straight line. It is not limited to this. For example, the pair of support bases 140 may be configured to reciprocate in opposite phases in an oval range in plan view. This makes it possible to increase the range of movement as compared with the case where the pair of support platens 140 are reciprocated on the same straight line in opposite phases, so that the range of processing the surface of the workpiece can be increased. it can.

  In the above embodiment, the tub containers 150 and 220 (tub portions) are provided, and the tub containers 150 and 220 (tub portions) are raised from the peripheral edges of the bottom plates 151 and 221 and the bottom plates 151 and 221. , But is not limited to this. Instead of providing the tub containers 150 and 220 (tub units), peripheral walls may be provided on the support plattens 140 and 210 (platen). In this case, the ultraviolet transmitting members 157 and 212 (light transmitting members) may be arranged on the supporting surface plates 140 and 210 (surface plates).

  Further, the shape of the trough may be a trough capable of storing at least one of a liquid and a gas. The shape of the tub portion may be a shape that opens upward like the tub containers 150 and 220 of the above-described embodiment, or may be a closed shape. In the case where the upper part is open, the liquid or gas used for processing may be used in a lateral direction or an upside-down direction. In this case, the upper part where the trough is opened may be lateral or downward.

Further, the first device example and the second device example of the above embodiment may be changed to other embodiments described below.
For example, in the first example of the light irradiation catalyst-based etching apparatus 100 of the embodiment shown in FIGS. 2 to 6, the support platen 140 of the light irradiation catalyst-based etching apparatus 100 includes the slit groove 141 of the first apparatus example. Alternatively, the workpiece W to be irradiated with ultraviolet light may have an ultraviolet light irradiation opening for ultraviolet light corresponding to the entire surface to be processed or the size of most of the surface. Then, a UV lamp 125 is provided below the UV irradiation opening, and UV light is irradiated by the UV lamp 125. After irradiating ultraviolet rays with the UV lamp 125, polishing processing is performed by the polishing head 163.

When the polishing process is performed, the base 110 is moved along a parallel rail (not shown) in the front-rear direction (the direction penetrating through FIG. 2) in FIG. In the portion where there is no, as in the above-described embodiment, the main shaft 160 is lowered to bring the workpiece W supported or held by the polishing head 163 into contact with or close to the catalyst pad 155. Thereafter, the support platen 140 is vibrated to the left and right on the paper surface of FIG. 2 by the drive motor 182, and in this state, the base 110 is swung within a certain range. In this state, the rotation of the main shaft 160 may or may not be optional. After the processing, the workpiece W may be returned to the ultraviolet irradiation opening again to irradiate the ultraviolet rays, and then the polishing operation may be repeated. If the spindle 160 (polishing head 163) is rotated with the workpiece W facing the UV lamp 125, the polishing surface of the workpiece W can be more uniformly irradiated with ultraviolet rays.
The merit of this method is that since the entire surface of the surface of the workpiece W to be processed can be irradiated with ultraviolet light once, when the surface is to be processed by several nm, for example, by setting the number of reciprocations, the amount can be reduced to a value close to several nm. It is possible to control the processing of the surface of the workpiece W.

  Further, for example, in the case of the second apparatus example of the light irradiation catalyst reference etching apparatus 200 of the embodiment shown in FIGS. 7 to 10, since the support platen 210 rotates at the time of processing, other than the first apparatus example In order to perform an operation similar to the above embodiment, the supporting surface plate 210 is provided on the outer diameter portion instead of the bottom plate side through-opening 221a of the second device example, and the entire surface of the workpiece W to be irradiated with the ultraviolet light to be processed. Alternatively, an opening for ultraviolet irradiation corresponding to most of the size may be provided. Then, a light irradiation unit 225 is provided below the ultraviolet irradiation opening, and ultraviolet light is irradiated from the light irradiation unit 225 to the outer diameter portion with the polishing head 260 raised. After irradiating the light irradiating unit 225 with ultraviolet light, the light irradiating unit 225 is moved to the inner diameter portion of the support platen 210.

Then, the workpiece W supported or held by the polishing head 260 is lowered and brought into contact with or close to the catalyst pad 240. Subsequently, the catalyst-based etching process is performed. After the processing, the light irradiation unit 225 is moved to the outer diameter portion with the polishing head 260 raised again, and the workpiece W is irradiated with ultraviolet light. This operation is repeated. By providing the light irradiating unit 225 at the inner diameter portion or the center portion, the processing operation of the catalyst-based etching process may be repeated at the outer diameter portion after the light irradiation with the polishing head 260 raised. When the light irradiation part 225 is present at the inner diameter part or the center part, a structure in which the lower rotation shaft 271 of the hollow drive mechanism 270 exists around the light irradiation part 225. The outer diameter portion may be held by a bearing.
The merit of this method is that since the entire surface of the surface of the workpiece W to be processed can be irradiated with ultraviolet light once, when the surface is to be processed by several nm, for example, by setting the number of reciprocations, the amount can be reduced to a value close to several nm. It is possible to control the processing of the surface of the workpiece W.

100, 200 Light irradiation catalyst reference etching device 140, 210 Support surface plate (surface plate)
150, 220 tub container (tub unit)
151, 221 Bottom plate 155, 240 Catalyst pad (pad part)
157, 212 Ultraviolet transmitting member (light transmitting member)
157a, 212a Water stop treatment unit 125, 225 UV lamp (light irradiation unit)
141 slit groove (surface plate side through opening)
151a Slit groove (bottom plate side through opening)
211a Through hole (surface plate side through opening)
221a Through hole (bottom plate side through opening)
W Workpiece

Claims (7)

A light irradiation unit which is used for light irradiation catalyst-based etching and emits light having a wavelength effective for processing a workpiece;
A surface plate having one or a plurality of surface plate side through openings through which light emitted from the light irradiation unit passes, and formed of a material that is not suitable for transmitting light emitted by the light irradiation unit,
A tub portion provided with a bottom plate having one or a plurality of bottom plate-side through openings, which is disposed above the surface plate and through which light emitted by the light irradiation unit passes,
A light transmitting member arranged in the tub portion to close the one or more bottom plate side through openings;
A light irradiation catalyst-based etching apparatus, comprising: a pad portion disposed above the bottom plate in the tub portion.   The light irradiation catalyst reference etching apparatus according to claim 1, wherein the platen is formed of a metal material, a material having resistance to ultraviolet light and having strength, or a material having a surface treatment having resistance to ultraviolet light.   The light irradiation catalyst reference etching apparatus according to claim 1, wherein the tub portion is detachable from the surface plate. The light transmitting member that transmits light having a wavelength that is effective for processing the workpiece is attached in a state where the bottom plate has been subjected to water stop processing in a water stop processing unit,
The light irradiation catalyst reference etching apparatus according to any one of claims 1 to 3, wherein the one or more platen-side through-openings are provided in a portion of the light transmitting member that does not correspond to the water stop processing section.   The light according to any one of claims 1 to 4, wherein at least one of the surface plate, the tub unit, and the pad unit has resistance to at least one of a water component and an oxygen component of 90 degrees or less. Irradiation catalyst based etching equipment.   A substance for at least one of a surface plate, a tub, a light transmitting member, and a catalyst pad used in the light irradiation catalyst reference etching apparatus according to claim 1. A light irradiation unit which is used for light irradiation catalyst-based etching and emits light having a wavelength effective for processing a workpiece;
A surface plate having one or a plurality of surface plate side through openings through which light emitted from the light irradiation unit passes, and formed of a material that is not suitable for transmitting light emitted by the light irradiation unit,
A peripheral wall rising from the periphery of the surface plate;
A light transmitting member disposed on the surface plate so as to close the one or more surface plate side through openings;
A light irradiation catalyst-based etching apparatus, comprising: a pad portion disposed above the surface plate.