JP7118417B2 - Light irradiation catalyst standard etching system - Google Patents

Description

The present invention relates to a polishing apparatus (including a surface plate and a polishing pad) that utilizes, for example, ultraviolet (UV) light. In particular, it can be suitably used for planarization using the catalyst-based etching method, and relates to a light irradiation catalyst-based etching device (including a surface plate and polishing pad) used to process the surface of a workpiece. .

In recent years, in order to extend the merits of the catalyst-based etching method and compensate for the disadvantages of the catalyst-based etching method, light is applied to the surface of the workpiece so as to increase the flatness without leaving any damage on the surface of the workpiece. A photocatalyst-based etching method has been proposed in which a workpiece is flattened while it is being processed (see, for example, Patent Document 1).

A light irradiation catalyst-based etching apparatus using a light irradiation catalyst-based etching method described in paragraph [0032] of Patent Document 1 and the like includes a container filled with a processing liquid and an upper end of a surface plate rotating shaft. a surface plate that is rotatably arranged in a container and also serves as the bottom surface of the container; a light source positioned below the board. The platen is made of a solid acidic catalyst, such as quartz, which has excellent light transmittance. The lower surface of the workpiece is irradiated with light, such as ultraviolet light, from a light source through the surface plate. Note that the surface plate may be made of sapphire, zirconia, or the like, which has excellent light transmittance. In the catalyst-based etching method, the removal reaction proceeds from the step edge of the workpiece. In addition to this, by providing a light source for irradiating ultraviolet light, it becomes possible to perform processing by the reaction of the catalyst-based etching method even from the step edge of the workpiece that has received the ultraviolet light.

JP 2012-64972 A

A surface plate used in a conventional photo-irradiation catalyst-based etching method is made of a material such as quartz that has excellent transparency to the ultraviolet light emitted from the light source of the ultraviolet irradiation unit. In recent years, there has been a need for larger workpieces, and there is a high possibility that the workpieces will be larger in the future. When trying to maintain the load per unit area of the workpiece due to the increase in the size of the workpiece, it becomes necessary to apply a high load to the surface plate that can transmit light, and the moment load on the surface plate also increases. do. If the size of the surface plate is increased while the thickness remains the same as that of the conventional surface plate, the strength of the surface plate is weak and the surface plate is easily damaged because it is made of, for example, quartz. On the other hand, increasing the thickness of the surface plate so as not to damage it leads to an increase in cost. Therefore, in the light irradiation catalyst standard etching apparatus, there is a need for a surface plate capable of transmitting light from the ultraviolet irradiating part to the processed surface of the workpiece while ensuring strength and not leading to an increase in cost.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a polishing apparatus that utilizes, for example, ultraviolet (UV) light and that includes a surface plate capable of ensuring strength and allowing light from an ultraviolet irradiation unit to pass through to the surface of a workpiece to be processed. and In particular, it is an object of the present invention to provide a photocatalyst-based etching apparatus.

A light irradiation polishing (catalyst-based etching) apparatus according to the present invention is particularly used for light irradiation catalyst-based etching. a surface plate having one or more surface plate-side through openings through which the applied light passes, and formed of a material not suitable for transmitting light of a wavelength effective for processing a workpiece; A tub portion disposed on the upper side and provided with a bottom plate having one or more bottom plate side through openings through which light having a wavelength effective for processing of a workpiece passes, and a bucket portion so as to block the one or more bottom plate side through openings. A light-transmitting member arranged in the tub portion and a pad portion arranged above the bottom plate in the tub portion are provided.

Further, it is preferable that the surface plate is made of a metal material, a material that is resistant to ultraviolet rays and has strength, or a material that is subjected to a surface treatment that is resistant to ultraviolet rays.

Moreover, it is preferable that the bucket portion is detachable with respect to the surface plate.

Further, the light-transmitting member effective for processing the workpiece is attached to the bottom plate in a state in which a water stop treatment is applied to the bottom plate in the water stop treatment section, and the one or more surface plate side through openings are: It is preferable that the light-transmitting member is provided at a portion that does not correspond to the waterproof treatment portion.

In addition, it is preferable that at least one of the surface plate, the tub and the pad has resistance to at least one of water and oxygen at 90 degrees or less.

The present invention also relates to at least one material of a surface plate, a tub, a light transmission member, and a catalyst pad used in the light irradiation catalyst standard etching apparatus.

Further, the present invention is used for light irradiation catalyst-based etching, and includes a light irradiation unit that emits light having a wavelength effective for processing a workpiece, and one or more light irradiation units through which the light emitted from the light irradiation unit passes. a surface plate having a surface plate-side through opening and formed of a material not suitable for transmitting the light emitted by the light irradiation unit; a peripheral wall portion rising from the peripheral edge of the surface plate; The present invention relates to a light irradiation catalyst standard etching apparatus including a light transmission member arranged on the surface plate so as to block a surface plate side through opening, and a pad portion arranged on the upper side of the surface plate.

According to the present invention, it is possible to provide a photo-irradiation catalyst-based etching apparatus capable of ensuring strength and having a surface plate capable of transmitting light from an ultraviolet irradiation section.

1 is a diagram showing the overall configuration of a workpiece processing system of the present invention; FIG. 1 is an overall side view showing a first apparatus example of a light irradiation catalyst reference etching apparatus; FIG. FIG. 2 is a vertical cross-sectional view showing details of a first example of a light irradiation catalyst standard etching apparatus; FIG. 2 is a plan view mainly showing the structure of a support surface plate and a container of the first example of the light irradiation catalyst standard etching apparatus. FIG. 3 is a diagram showing the configuration of a main drive section of a first example of a light irradiation catalyst standard etching apparatus; FIG. 2 is a diagram showing each electrode part in the first apparatus example of the light irradiation catalyst standard etching apparatus; FIG. 11 is a perspective view showing a second example of a light irradiation catalyst standard etching apparatus; FIG. 11 is a perspective view of a second example of the photo-irradiation catalyst-based etching apparatus as viewed from below; FIG. 10 is a partial cross-sectional view mainly showing the structure of a support surface plate and a container of a second example of the light irradiation catalyst standard etching apparatus. FIG. 10 is a diagram for explaining control for starting the light irradiation catalyst-based etching operation after the workpiece held by the polishing head comes into contact with or comes close to the surface of the catalyst pad; 10 is a photographic image showing a state in which the contact portion of the conventional contact pad is peeled off at the peeled portion.

A preferred embodiment of the workpiece processing system 10 of the present invention will be described below with reference to the drawings. The overall configuration of a workpiece processing system 10 of this embodiment will be described with reference to FIG. FIG. 1 is a diagram showing the overall configuration of a workpiece processing system 10 of the present invention.

As shown in FIG. 1, the workpiece processing system 10 of the present embodiment includes mechanical or physical surface processing means 11 for polishing the surface of the workpiece, latent scratch removing means 12, and first cleaning means. 13 , first drying means 14 , latent flaw removal inspection means 15 , surface finishing means 16 , second cleaning means 17 , second drying means 18 and inspection means 19 . In addition, mechanical or physical surface processing means 11, latent flaw removal means 12, first cleaning means 13, first drying means 14, latent flaw removal inspection means 15, surface finishing means 16, second cleaning means 17, second For movement between the drying means 18 and the inspection means 19, a conveying means 20 constituted by a robot or the like is used.

The mechanical or physical surface processing means 11 performs surface processing such as cutting, cutting, dicing, and polishing by mechanically or physically processing the surface of the workpiece. Examples of workpieces include SiC substrates (wafers). Note that the workpiece is not limited to a substrate such as a SiC substrate. As the mechanical or physical surface processing means 11, for example, a CMP apparatus using a technique of CMP (Chemical Mechanical Polishing) for polishing the surface of a workpiece using an abrasive (abrasive grain) is used. CMP increases the mechanical polishing (surface removal) effect due to the relative movement of the polishing agent and the object to be polished by the surface chemical action of the polishing agent (abrasive grains) itself or the action of the chemical components contained in the polishing liquid. It is also a technique for obtaining a smooth polished surface. In CMP, hard diamond abrasive grains, for example, are used as abrasives (abrasive grains). When the surface of a work piece is polished by mechanical polishing such as CMP, even if the surface appears to be flat, there remains the possibility that damage called latent damage is inherent in the work piece. There is a problem that electrical characteristics are adversely affected and the strength of the workpiece is weakened due to latent scratches.

The latent flaw removing means 12 performs surface treatment to remove latent flaws formed on the workpiece by the mechanical or physical surface processing means 11 . The latent scratch removing means 12 performs surface treatment using a chemical reaction without using abrasive grains, instead of mechanical processing using abrasive grains. Therefore, the latent flaw removing means 12 can remove latent flaws formed on the workpiece by the mechanical or physical surface processing means 11 without forming damage such as latent flaws on the workpiece. The surface treatment using a chemical reaction without using abrasive grains in the latent scratch removing means 12 may be performed while performing treatment by electrical action or treatment by irradiating ultraviolet light. By performing surface treatment using chemical reactions without using abrasive grains while performing treatment by electrical action or treatment by irradiating ultraviolet light, chemical reactions such as catalysts can be accelerated, so it is possible to process The speed of surface treatment of objects can be improved.

For example, chemical polishing, chemical etching, catalyst-based etching, and the like are used as processing treatments using chemical reactions that do not use abrasive grains.
Chemical polishing is a surface treatment technique that utilizes a chemical reaction that is performed in a state in which a polishing liquid that does not use abrasive grains is introduced.
Chemical etching is a surface treatment technology that utilizes a chemical reaction in the presence of an etchant that does not use abrasive grains.

Catalyst-based etching is a processing technique that utilizes chemical reactions without the use of abrasives or abrasive grains. Catalyst-based etching is a processing method that does not introduce any scratches, process-affected layers, or latent flaws into the surface to be processed by processing.

Specifically, catalyst-based etching involves placing a work piece in either or both of a working solution and gas, bringing a catalyst into contact with or in close proximity to the work surface of the work piece, and removing the working solution and gas. The machining of the machining surface of the workpiece is progressed by causing the workpiece to move relative to the catalyst immersed in either or both of the above while bringing the workpiece into contact with or in close proximity to the catalyst.

Examples of workpieces include substrates such as SiC, GaN, sapphire, gallium oxide, diamond, aluminum gallium nitride, silicon, oxide substrates, ceramic substrates, epitaxial growth films and film formation surfaces, ternary mixed crystals, 4 Element mixed crystals, and materials containing at least one of Si, C, Ga, N, Al, O, and In. The workpiece used for catalyst-based etching is not limited to substrates. The work piece can be of any shape.
A metal such as platinum, nickel, or a ceramic-based solid catalyst can be used as the catalyst.
As the working solution, for example, a liquid that hydrolyzes on the working surface of the workpiece, a liquid that generates halogen radicals on the surface of the catalyst, or the like can be used.

When the surface treatment is chemically performed using the principle of catalyst-based etching due to the nature of the workpiece, gas is used if it is more rationally possible to process the workpiece than the machining liquid. An example of a catalytic-based etch using gas is one that utilizes an oxidation reaction.
Rationalization of catalyst-based etching reaction, improvement of fluidity of gas and liquid near the processing surface of the workpiece, prevention of oxidation of the processing solution and promotion of processing of the surface of the workpiece, reactivation of the catalyst surface and removal of catalyst poison For this purpose, both liquid and gas may be used by using at least one of mist, microbubble aqueous solution, and nanobubble aqueous solution. Moreover, at least one of the liquid and the gas may be heated. Alternatively, ultraviolet (UV) radiation may be employed (used). Alternatively, electricity may be used.

For example, a nickel sulfate aqueous solution, water (pure water, ultrapure water), or the like can be used as the machining solution that causes hydrolysis on the machining surface of the workpiece. By using an aqueous solution of nickel sulfate as a working solution, hydrolysis is caused on the working surface of the workpiece, and by applying a voltage, plating can be formed on the catalyst pad 155 (described later). When hydrolysis is caused to perform catalyst-based etching, the work is brought into contact with the catalyst immersed in the work solution with the work solution interposed between the work surface and the catalyst. The relative motion causes the hydrolysis reaction on the processing surface of the workpiece to generate decomposition products. Then, the processed surface of the workpiece is processed by eluting the decomposition products into the processing solution.

Further, a hydrofluoric acid aqueous solution or the like can be used as a processing solution that generates halogen radicals. When performing catalyst-based etching by generating halogen radicals, the workpiece is placed in a processing liquid containing halogen-containing molecules that are not soluble in the workpiece under normal conditions. A catalyst consisting of a resistant metal catalyst or a ceramic solid catalyst such as The workpiece is processed by eluting the halogen compound generated in . For example, in the case of catalyst-based etching of a SiC substrate to be processed, platinum is used as a contact catalyst, hydrofluoric acid aqueous solution is used as a processing solution, and the work is brought into contact with the catalyst immersed in the processing solution. Machining is progressed by moving relative to each other.
The details of the configuration of a catalyst-based etching apparatus that performs catalyst-based etching will be described later.

In addition, in the catalyst-based etching apparatus, in order to extend the merits of the catalyst-based etching method and compensate for the disadvantages of the catalyst-based etching method, the surface of the workpiece to be processed is improved in flatness without leaving any damage on the surface of the workpiece. It is also possible to flatten the workpiece while irradiating the surface of the workpiece with light. As a result, in the medium-based etching method in which the removal reaction progresses from the step edge of the workpiece, for example, by providing a light source for irradiating ultraviolet light, the catalyst can be removed from the workpiece other than the step edge of the workpiece that has received the ultraviolet light. Processing by the reaction of the standard etching method becomes possible. As a result, not only catalyst-based etching but also light-irradiation catalyst-based etching in which light irradiation is further added becomes possible.
The details of the configuration of the photo-irradiation catalyst-based etching apparatus for performing the photo-irradiation catalyst-based etching will be described later.

The latent scratch removing means 12 reduces the latent scratches formed on the workpiece by surface treatment to at least 30% or less by surface treatment using chemical reaction without using abrasive grains before finishing the workpiece. (Latent scratch removal step). The latent flaw removing means 12 previously removes the latent flaw from the workpiece so as to reduce the latent flaw to at least 30% or less, preferably 10% or less, and more preferably 0%.

Specifically, the surface of the workpiece polished by mechanical or physical surface processing means 11 such as CMP is apparently a flat surface. However, a workpiece that has been polished by mechanical polishing such as CMP is inherently damaged by scratches called latent scratches. Latent scratches run the risk of being formed just below the surface of the work piece during polishing by mechanical or physical surface processing means 11, and removing a thickness of, for example, 100 nm or so from the surface of the work piece can result in Almost all latent scratches can be removed. The thickness for removing latent scratches is not limited to 100 nm because the depth at which latent scratches are formed varies depending on the method and conditions of mechanical polishing.

The latent scratches formed on the workpiece by the mechanical or physical surface processing means 11 are removed by applying a chemical reaction-based surface treatment that does not use abrasive grains to the workpiece that has been polished by mechanical polishing such as CMP. By removing several nanometers to several tens of nanometers (for example, 20 nm), it can be revealed on the surface of the workpiece. From this state, the latent scratch removing means 12 removes latent scratches from the workpiece by at least 30% or less, preferably 10% or less, more preferably 0% by surface treatment using chemical reaction without using abrasive grains. removed in advance to reduce the A workpiece subjected to the latent flaw removal process is formed by the latent flaw removal step.

Here, in the latent flaw removing means 12 of the present embodiment, processing is performed by, for example, a processing method based on catalyst-based etching. After the treatment for removing latent scratches by catalyst-based etching, the surface of the workpiece is covered with harmful ingredients that impair quality, such as metals such as platinum, gold, chromium, or ceramic-based solid catalysts. It is attached as a kimono.

Therefore, in the present embodiment, cleaning (washing) is performed to remove harmful components adhering to the surface of the workpiece. Cleaning for removing harmful components adhering to the surface of the workpiece is performed by the first cleaning means 13 .

The first cleaning means 13 cleans the surface of the workpiece from which the latent flaw removal process has been performed by the latent flaw removing means 12, for example, by catalyst-based etching. The first cleaning means 13 includes a first main cleaning means 13a and a finishing cleaning means 13b.

The first main cleaning means 13a brings the workpiece to which the harmful components that impair the quality adhere to a cleaning substance that causes a catalytic reaction in relation to the harmful component and the workpiece to contact or approach, thereby cleaning the workpiece. All or part of the harmful components adhering to the surface of the workpiece are removed together with part of the surface of the workpiece by a catalytic reaction with the substance (cleaning process).

For example, when the surface of the workpiece is processed by catalyst-based etching in the latent scratch removing unit 12, the first main cleaning means 13a is used as a catalyst in the catalyst-based etching on the surface of the workpiece. Also, for example, harmful substances such as Pt (platinum) adhere as metal contamination. The first main cleaning means 13a is used as a catalyst in catalyst-based etching, for example, and cleans harmful substances adhering to the surface of the workpiece. In the first main cleaning means 13a, for example, the above-described catalyst-based etching technique can be applied to remove only the portion in contact with or in close proximity to the workpiece using a chemical reaction at the atomic level. In particular, when the surface of an object to be cleaned, which is a workpiece, has a one-by-layer step-terrace structure, the first main cleaning means 13a is used for cleaning when it is desired to maintain the flatness of the surface at the atomic level. It is atomically cleanable from the edge. Using a catalyst as a cleaning substance, it is possible to carry out cleaning treatment of harmful substances adhering to the surface of the workpiece. Further, the first main cleaning means 13a can perform cleaning without generating latent scratches.

Catalysts used as cleaning substances include noble metals, transition metals, ceramic solid catalysts, basic solid catalysts, acidic solid catalysts, and the like. Toxic substances (components) adhering to the surface of the workpiece and surface components removed by cleaning the workpiece need to be mixed in the liquid by the cleaning substance and the fluid in the catalyst-based cleaning. Selection of the cleaning substance requires consideration of the workpiece and the components of the cleaning substance adhering to the workpiece. The cleaning substance used in the first main cleaning means 13a should be removable by the first finishing cleaning means 13b without adversely affecting the workpiece as much as possible. It is necessary to select the catalyst used in the first main cleaning means 13a and the first finishing cleaning means 13b in consideration of the compatibility of the workpiece, the cleaning substance and the cleaning means.

For example, conventionally, in order to remove harmful substances such as Pt (platinum) adhering to the surface of the workpiece, it was thought that boiling aqua regia was the only way to remove it. , The resistance to aqua regia and heat was low depending on the composition of the workpiece. In addition, conventionally, even if you try to wash the workpiece with a cleaning method that can remove the components that you want to remove from the workpiece and the components that you want to remove, the workpiece may not be cleaned due to the cleaning solution, the cleaning method, or the resistance of the workpiece. In some cases, it was not possible to remove the components adhering to objects that one wanted to remove. On the other hand, in the first main cleaning means 13a, if a catalyst composed of Ni and Fe components in liquid or gas is used as a cleaning substance, the quality of Pt (platinum) adhered to the surface of the workpiece can be removed. Harmful substances can be reduced or eliminated without the use of boiled aqua regia. Moreover, the first main cleaning means 13a does not dissolve the entire surface by simply spraying the surface with chemicals, unlike general cleaning using chemicals, so it is easy to maintain the surface roughness of the workpiece.

Regular cleaning avoids the addition of new particles (dust) and metal contamination. However, in the cleaning (the first main cleaning means 13a) of the present invention, a cleaning substance such as a component that is a new source of metal contamination is intentionally used for the workpiece. In the cleaning means of the first final cleaning means 13b, the components of cleaning substances (such as metal contamination) adhering to the workpiece have good compatibility with the cleaning means of the first final cleaning means 13b and the workpiece. Therefore, by selecting a cleaning solution capable of removing components of cleaning substances (metal contamination, etc.) in consideration of the cleaning means of the first finishing cleaning means 13b, the workpiece can be cleaned without generating latent scratches or pits in the cleaning process. Harmful components can be reduced or removed from the surface of objects.

A substrate can be used as the workpiece, and objects having different thicknesses and shapes can be handled in addition to the substrate. As the workpiece, for example, a cylindrical shape, a prismatic shape, a cylindrical shape, a prismatic shape, a shape with unevenness or holes, or a three-dimensional shape can be used. The material of the workpiece is epitaxial growth film or film surface, 3-element mixed crystal, 4-element mixed crystal, oxide, ceramic, or atoms of In, Si, C, Ga, N, O, Al, and Zn. There is at least one that contains Polishing with the aid of (using) ultraviolet (UV) light is desirable.

In the present embodiment, the first main cleaning unit 13a performs cleaning to remove adhered components such as Pt (platinum) adhering to the surface of the workpiece using, for example, Ni as a catalyst as a cleaning substance. . In this case, the cleaning operation of the first main cleaning means 13a is carried out by using the apparatus for performing the above-described catalyst-based etching, using Ni as the catalyst instead of performing etching using Pt as the catalyst. Pt adhering to objects can be removed. In this case, Pt is removed from the surface of the workpiece, and Ni adheres to the surface of the workpiece from which Pt has been removed.

In addition, the first main cleaning means 13a removes catalytic reaction inhibiting components that inhibit the reaction of the catalyst at least before bringing the workpiece to which the harmful components that impair the quality adhere to the cleaning substance contact or come close to the cleaning substance. A treatment (catalytic reaction inhibiting component removal step) may be performed in which at least one of usable liquid, gas, or ultraviolet (UV) is applied to the cleaning substance. As a result, harmful components attached to the workpiece can be effectively removed when the workpiece is cleaned. Also, the surface of the work piece may be irradiated with ultraviolet (UV) light at least before the work piece is brought into contact with or in close proximity to the cleaning substance. By applying ultraviolet rays (UV), it is possible to remove harmful components from the surface of the workpiece, for example, from several layers other than the edge of the step terrace in the atomic layer. By irradiating with ultraviolet (UV) rays, the possibility of removing harmful components from the surface of the workpiece can be improved.

In addition, the first main cleaning means 13a causes a catalytic reaction consisting of at least one of gas and liquid before and/or after bringing the work to which harmful components that impair the quality are adhered into contact with or close to the cleaning substance. A process (catalyst component acting step) may be performed in which a component such as a catalyst poison to be inactivated acts on the catalyst components adhering to the workpiece. As a result, when cleaning the workpiece, the catalyst poison acts on the harmful components such as the catalyst components attached to the workpiece. can be reduced.

The first finishing cleaning means 13b performs a cleaning process for removing harmful substances adhering to the surface of the workpiece by the first main cleaning means 13a. The first final cleaning means 13b removes all or part of the components of the cleaning substance by general cleaning means (cleaning) such as wet cleaning, dry cleaning, scrub cleaning, or ultrasonic cleaning. Remove from the workpiece to which the component of the substance adheres (washing process). In this embodiment, the cleaning substance used in the first main cleaning means 13a is a cleaning substance that can be removed by general cleaning. General cleaning may be cleaning that can remove or reduce the components adhered by the cleaning substance, and needs to be cleaning that satisfies the usage conditions of the workpiece.

Wet cleaning and scrub cleaning as general cleaning (cleaning) will be described.
Wet cleaning is cleaning using water as a medium. A typical example of wet cleaning is RCA cleaning. Cleaning such as RCA cleaning, which does not generate latent scratches or pits on the workpiece, is preferable due to compatibility with the workpiece.
Scrubbing is cleaning that removes contaminants from the surface of a workpiece (such as a substrate) by physically impacting contaminants adhering to the surface of the workpiece (such as a substrate).

In this embodiment, the first finish cleaning means 13b removes, for example, the Ni component, which is a cleaning substance, from the workpiece (substrate, etc.) from the surface of the workpiece (such as a substrate), which has adhered to the surface of the workpiece by the first main cleaning means 13a. It is removed by performing general cleaning used for washing.

Conventionally, when removing harmful substances such as Pt (platinum) adhering to the work piece from the surface of the work piece, the work piece is immersed in aqua regia so that it adheres to the surface of the work piece. The platinum was removed. Cleaning the platinum adhering to the workpiece with aqua regia is difficult because the aqua regia is highly dangerous to the human body and requires separate equipment such as heating the aqua regia to a high temperature.

On the other hand, according to the present invention, the first main cleaning means 13a removes all or part of the harmful components adhering to the surface of the workpiece through the catalytic reaction of the cleaning substance. remove with This eliminates the need to use aqua regia or the like, which requires separate equipment for management and use, in cleaning the workpiece, so that the harmful components adhering to the workpiece can be easily removed. This is particularly effective in the case of a combination that cannot be washed due to the relationship between the workpiece, the harmful substance to be removed, and the washing liquid. For example, when the harmful substance that adheres to the workpiece and you want to remove is Pt (platinum), and the workpiece cannot withstand boiling aqua regia due to its material or temperature conditions. There is
Further, by performing general cleaning by the first finishing cleaning means 13b, the cleaning substances adhering during the cleaning by the first main cleaning means 13a can be easily removed.

The first drying means 14 dries the workpiece cleaned by the first cleaning means 13 .

The latent flaw removal inspection means 15 inspects whether latent flaws formed on the workpiece after being cleaned by the first cleaning means 13 and dried by the first drying means 14 have been removed. As a method for confirming the presence or absence of latent scratches formed on a workpiece, there is, for example, a method of observing the surface of the workpiece after removing a predetermined thickness from the surface of the workpiece on which the latent scratches are formed.

A specific procedure for confirming the presence or absence of latent flaws formed on the workpiece by the latent flaw removal inspection means 15 will be described.
First, in the workpiece on which the latent scratches are formed, the surface of the workpiece is processed using a chemical reaction without using any abrasives or abrasive grains, and the thickness is such that the latent scratches appear on the surface. Several nanometers to several tens of nanometers are removed. In this case, for example, the latent flaw appearing on the surface of the workpiece is used as a reference before removing the latent flaw from the workpiece. The thickness of the workpiece at which the latent scratches appear on the surface may be a thickness that makes the latent scratches visible to the extent that it becomes a reference for calculating the residual rate of the latent scratches. The thickness to remove the surface of is set appropriately.

In the inspection process for confirming the presence or absence of latent scratches, the surface of the workpiece is further removed by a predetermined thickness, for example, several nanometers to several tens of nanometers, from the reference before removing the latent scratches. Then, every time several nanometers to several tens of nanometers are removed, an inspection process for confirming the presence or absence of latent scratches is performed by checking the difference from the reference before removing the latent scratches. As a result, in the inspection process for confirming the presence or absence of latent scratches, the residual rate of latent scratches on the workpiece is at least 30% or less, preferably 10% or less, or more preferably 0%. Check to see if it is

For example, when the surface is viewed from the front, the residual rate of latent scratches is calculated based on the number of latent scratches, the total length of latent scratches, the total area where latent scratches are formed, etc. to judge. The latent flaws on the surface of the workpiece can be measured by, for example, a SiC wafer defect inspection device (SICA manufactured by Lasertec Co., Ltd.).

If the workpiece inspected by the latent flaw removal inspection means 15 does not satisfy a predetermined residual rate of latent flaws, it is returned to the latent flaw removal means 12, for example, to remove latent flaws from the workpiece. Reprocess. When the workpiece inspected by the latent flaw removal inspection means 15 satisfies a predetermined latent flaw residual rate, the workpiece is conveyed toward the surface finishing means 16 . Here, if the workpiece is a mass-produced product, for example, if a condition for removing latent flaws is found in the same lot, latent flaws can be removed from the remaining workpieces under that condition. , the processing time can be shortened because the process of inspecting the workpiece can be omitted.

Regarding the thickness to be removed from the surface of the workpiece by the latent flaw removing means 12, for example, the workpiece subjected to the latent flaw removal processing under a plurality of latent flaw removal conditions is made into a device, and the performance result of the device is determined. Based on the experimental data of the latent scratch residual rate is collected, and based on the collected experimental data, the latent scratch disappears from the workpiece (for example, 30% or less, 10% or less, 0%). The thickness to be removed from the surface of the object may be preset.

Conventionally, when mechanical polishing such as CMP is performed in the surface processing of a workpiece, the surface of the workpiece is flattened while rough polishing that tends to cause scratches is performed, followed by gradually finer polishing. In order to be a processing treatment that does, we were doing a processing treatment that reduces scratches. In other words, by making the particles of the abrasive finer, the surface of the workpiece is polished so that the surface of the workpiece is flattened and latent scratches are less likely to occur. This conventional processing method is a processing method in which the surface of the workpiece is flattened so as not to cause latent scratches, and is not performed while observing latent scratches in the workpiece.

In contrast, the present invention flattens the surface of the workpiece after removing latent scratches on the workpiece. That is, in the method of processing a workpiece according to the present invention, latent scratches formed on the workpiece by surface treatment are removed by surface treatment using a chemical reaction without using abrasive grains before finishing the workpiece. , from the workpiece, once pre-removed so as to reduce to at least 30% or less. As a result, the finishing process is performed after executing the process of eliminating latent scratches from the workpiece. Therefore, the entire polishing process of the workpiece does not have to be performed by an atomic level processing method that requires processing time, such as catalyst-based etching from the step edge, so that the planarization time of the workpiece is shortened. In addition, the surface of the workpiece can be processed at low cost.

As a result, latent scratches are removed from the workpiece in advance by surface treatment using a chemical reaction that does not use abrasive grains, so no new latent scratches are formed. It will be better just to finish the surface of In the past, the surface was finished with latent scratches while removing the latent scratches.
Further, after polishing the surface of the substrate, which is the workpiece, by shortening the processing time by mechanical polishing such as CMP, the latent scratches formed by the mechanical polishing are removed from the workpiece in the latent scratch removal step. Can be removed from the surface. Therefore, the flattening quality of the surface of the substrate to be processed can be ensured when the catalyst-based etching is performed in the finishing process without causing latent scratches on the substrate to be processed. Even when performing finishing by CMP, the risk of new latent flaws occurring can be minimized by shortening the finishing time because existing latent flaws do not need to be removed.
Therefore, since the surface is finished after reducing the latent flaws to at least 30% or less before finishing, the risk of latent flaws occurring in finishing is reduced, and the finish processing time is reduced without causing latent flaws in the workpiece. In addition to being able to shorten the time, latent scratches can be minimized, and the surface of the workpiece can be finished flat to the extent required by the device. If the slurry is not used, it is easy to handle, and it is also possible to process the surface of the workpiece at low cost.

For example, in the present invention, if the number of latent scratches is reduced to 0 in the latent scratch removal step of the present invention before finishing, there is no need to remove latent scratches in finishing, so the minimum surface formation of the surface processing is sufficient. When performing finishing by catalyst-based etching, if there are no latent scratches in the pre-processing, no latent scratches will occur in the finishing process. It is possible to finish. When the finishing is CMP, the number of latent scratches increases from 0 when viewed from the state of latent scratches. According to the present invention, when finishing is CMP, finishing CMP only needs to be performed for a short period of time until the surface is formed. Therefore, the risk of new latent flaws occurring in the finishing process can be reduced more than before.

As in the past, for example, while forming a surface from a state in which several hundred latent scratches exist on the surface of a workpiece, processing to reduce the latent scratches to 0 even a little, conventionally, only a thickness of about 100 nm is used. When trying to remove latent scratches, it was necessary to uniformly remove the entire surface by finishing, which tended to have a low processing rate. At this time, if the finishing is performed by CMP using abrasive grains, conventionally, only a thickness of about 100 nm must be removed by the finishing process. If the finishing is performed by CMP using abrasive grains, there is always a risk of generating new latent scratches until a thickness of about 100 nm is removed from the surface before processing. According to the present invention, the problem can be improved. As a supplement, in the description of the conventional technique, the depth at which the latent flaw exists is described as about 100 nm, but the depth at which the latent flaw remains depends on the method and conditions of processing performed up to the step before the finishing step. depends on Therefore, the depth at which latent scratches exist is not always about 100 nm.

The surface finishing means 16 finishes the surface of the workpiece from which latent flaws have been removed by the latent flaw removing means 12 (surface finishing step). The surface finishing means 16 is performed by, for example, finish CMP, catalyst-based etching, or the like. The surface finishing means 16 mainly performs processing for flattening the surface of the workpiece in the finishing treatment of the workpiece. The surface finishing means 16 performs a process for flattening the surface of the workpiece from which the latent flaw removal process has been performed by the latent flaw removal step performed by the latent flaw removal means 12 . That is, the latent flaw removing step in the latent flaw removing means 12 is mainly processing for removing latent flaws from the surface of the workpiece, and the finishing treatment in the surface finishing device 16 is to flatten the surface of the workpiece. The main processing is to

In the finishing CMP, a polishing process is performed using a slurry for finishing (for example, a slurry containing abrasive grains with a finer grain size) than the CMP used in the mechanical or physical surface processing means 11 described above. It is performed within a range that does not cause latent damage to the workpiece. Therefore, finishing CMP can reduce the probability of causing latent flaws on the workpiece more than the conventional method.

Catalyst-based etching is a process similar to the process used in the aforementioned latent scratch removing means 12, and can also be used for surface finishing. Catalyst-based etching uses a chemical reaction that does not use abrasives or abrasive grains at all, even when used in the finishing process. It can be used for finishing treatment for flattening the surface.

The second cleaning means 17 cleans the surface of the workpiece that has undergone the surface finish treatment. The second cleaning means 17 includes main cleaning means 17a and finishing cleaning means 17b. Since the configuration and operation of the second cleaning means 17 are the same as those of the first cleaning means 13, the description thereof will be omitted.

The second drying means 18 dries the workpiece cleaned by the second cleaning means 17 .

The inspection means 19 inspects the workpiece after the surface processing treatment. The inspection means 19, for example, measures the thickness and weight of the workpiece after the surface processing treatment, and inspects whether or not it satisfies a predetermined standard. If the predetermined criteria are not met, for example, the workpiece is removed as a defective product, or the workpiece is controlled to be reprocessed.
The workpiece inspected by the inspecting means 19 is transported to the next process.

[Light Irradiation Catalyst Standard Etching Apparatus]
Next, a light irradiation catalyst-based etching apparatus (processing apparatus) capable of executing the catalyst-based etching performed in the latent scratch removing means 12 and the surface finishing means 16 in FIG. 1 will be described. For example, a first apparatus example and a second apparatus example of the catalyst-based etching apparatus will be described. The first device example and the second device example of the light irradiation catalyst standard etching device are processing devices that perform the latent flaw removing process executed by the latent flaw removing means 12 and the surface finishing process executed by the surface finishing means 16. is an example.

(First device example of light irradiation catalyst standard etching device)
A first apparatus example of a light irradiation catalyst-based etching apparatus for performing light irradiation catalyst-based etching will be described. FIG. 2 is an overall side view showing a first example of the light irradiation catalyst reference etching apparatus 100. As shown in FIG. FIG. 3 is a vertical cross-sectional view showing the details of a first example of the light irradiation catalyst standard etching apparatus 100. As shown in FIG. FIG. 4 is a plan view mainly showing the configuration of the supporting surface plate 140 and the tub container 150 of the first example of the light irradiation catalyst standard etching apparatus 100. As shown in FIG. FIG. 5 is a diagram showing the configuration of the main drive unit PD of the first apparatus example of the light irradiation catalyst reference etching apparatus 100. As shown in FIG.

As shown in FIGS. 2 to 4, the light irradiation catalyst standard etching apparatus 100 in the first apparatus example includes a pair of flat processing portions SP1 and SP2 on the left and right sides of the base 110. FIG. The left and right flat processing parts SP1 and SP2 have the same structure and have almost the same weight if the processing accuracy error is excluded. The details of the flat processing part SP1 will be described below with reference to FIG.

As shown in FIG. 3, pedestals 121 and 122 having symmetrical L-shaped cross sections are arranged in parallel on a base 110 and extend in the front-rear direction in FIG. 3 (left-right direction in FIG. 2). In addition, the respective mounts 121 and 122 have the left and right flat processed portions SP1 and SP2 continuously and integrally provided and positioned on the same straight line. Rails 131 constituting linear guides 130, which are guide members, are fixed along the left and right pedestals 121 and 122, respectively. The rail 131 is provided with sliders 132 slidably movable along the rails 131 at two locations in the longitudinal direction. 140 (surface plate) is mounted.

The support surface plate 140 is made of a material that is not suitable for transmitting light of wavelengths effective for processing a workpiece. Specifically, the support platen 140 is made of a material that does not transmit ultraviolet light. The support surface plate 140 is made of, for example, a metal material, a material that is resistant to ultraviolet rays and has strength, or a material that has undergone a surface treatment that is resistant to ultraviolet rays. For example, the support surface plate 140 is made of metal such as SUS (stainless steel) that does not transmit ultraviolet light, ceramics that does not transmit ultraviolet light, resin that does not transmit ultraviolet light, or a composite material thereof. In order to make the surface more resistant to ultraviolet light, liquids or gases, the surface is coated or plated with platinum group metals or gold, or treated with a resistant film such as a Teflon (registered trademark) coating. It's okay to be. Therefore, the supporting surface plate 140 is ensured to have a higher strength than the case where the whole is made of quartz or the like in order to transmit ultraviolet light. More preferably, the support surface plate 140 is made of SUS304, SUS316, or the like, which is suitable for use in clean rooms and resistant to ultraviolet rays. In addition, it is preferable that the support surface plate 140 has resistance to water components or oxygen components at 90 degrees or less. The temperature of the water component may be 75 degrees or less depending on the workpiece. For example, when the workpiece is SiC, the processing rate is critically improved when the temperature of the water component exceeds about 60 degrees to about 70 degrees. When the workpiece is SiC, it should be resistant to water components of at least 73 degrees or higher.

The support surface plate 140 has a plurality of slit grooves 141 (surface plate side through openings) through which the ultraviolet light emitted from the UV lamp 125 passes. The plurality of slit grooves 141 extend in the width direction orthogonal to the movement direction (the direction in which the rails 131 extend) of the support surface plate 140 moved by a drive motor 182, which will be described later. direction). The plurality of slit grooves 141 are formed at positions through which ultraviolet light from a UV lamp 125 (described later) arranged below the support surface plate 140 passes, and the UV lamp 125 (described later) is formed during the processing operation of catalyst-based etching. It is formed at a position through which the ultraviolet light from the is transmitted.

The support surface plate 140 is capable of reciprocating linear movement along the rails 131 . It should be noted that the mounts 121 and 122 may have surfaces on which the rails are placed, such as flat bars, other than the L-shaped cross section. The base 110 and the mounts 121 and 122 may be integrated. The advantage of the case where the base 110 and the mounts 121 and 122 are integrated is that the base 110 and the mounts 121 and 122 can be separated from each other during cutting work for achieving surface accuracy between the base 110 and the mounts 121 and 122. It is less prone to distortion than when it is a body. Further, the guide member that guides the support surface plate 140 is not limited to the structure described above, and may be, for example, a member that holds a guide shaft and slides along it. The support platen 140 does not have to be particularly rectangular.

Under the support surface plate 140, a UV lamp 125 (ultraviolet irradiation section) is arranged which is used for light irradiation catalyst standard etching and emits ultraviolet light. The UV lamp 125 emits ultraviolet light having a wavelength effective for processing the workpiece. For example, the UV lamp 125 may be composed of at least one of a low-pressure mercury UV lamp, a high-pressure mercury lamp, a metal halide lamp, an excimer lamp, and an LED lamp that emits light having an ultraviolet wavelength.
A tub container 150 (tub portion) for storing gas and liquid is mounted on the center portion of the upper surface of the support surface plate 140 . The tub container 150 is attachable to and detachable from the support platen 140 . In this embodiment, the tub container 150 is formed with an open top. Note that the tub container 150 is not limited to being open at the top, and may not be open at the top.

The tub container 150 includes a bottom plate 151 arranged above the support surface plate 140 and a peripheral wall portion 152 rising from the peripheral edge of the bottom plate 151 in this embodiment, which is open at the top. The tub container 150 is formed in the shape of a tub capable of holding a working solution or gas. The tub container 150 is made of, for example, a material such as resin, metal, ceramics, or a glass-based metal oxide having a low transmittance of ultraviolet light. The tub container 150 is preferably resistant to water components or oxygen components of 90 degrees or less. The temperature of the water component may be 75 degrees or less depending on the workpiece. For example, when the workpiece is SiC, the processing rate is critically improved when the temperature of the water component exceeds about 60 degrees to about 70 degrees. When the workpiece is SiC, it should be resistant to water components of at least 73 degrees or higher.

A processing solution is stored in the tub container 150 . In the first apparatus example of the light irradiation catalyst standard etching apparatus 100 of the present embodiment, by using, for example, an aqueous solution of nickel sulfate as the processing solution, the processing surface of the workpiece is hydrolyzed and a voltage is applied. Then, plating can be formed on catalyst pads 155 (described below). When hydrolysis is caused to perform catalyst-based etching, the work is brought into contact with the catalyst immersed in the work solution with the work solution interposed between the work surface and the catalyst. The relative motion causes the hydrolysis reaction on the processing surface of the workpiece to generate decomposition products. Then, the processed surface of the workpiece is processed by eluting the decomposition products into the processing solution.

Here, if an aqueous hydrofluoric acid solution is used as the processing solution, the quartz will be dissolved by the aqueous hydrofluoric acid solution if the ultraviolet transmitting member 157, which will be described later, is made of quartz, for example. Therefore, in the light irradiation catalyst standard etching apparatus 100 that irradiates ultraviolet light, when using the ultraviolet transmitting member 157 made of quartz, the hydrofluoric acid aqueous solution cannot be used as the processing solution. Therefore, in the present embodiment, the working solution is a liquid containing at least a water component, such as an aqueous solution containing a component that can be used as a catalyst, such as ultrapure water, pure water, hydrogen peroxide, or a component capable of electroplating, such as nickel. A liquid that satisfies chemical resistance is used. As the gas, a chemically resistant gas containing at least one of an oxygen component, a nitrogen component, and an ozone component can also be used.

Since the hydrofluoric acid aqueous solution does not dissolve the sapphire glass, the hydrofluoric acid aqueous solution may be used as the processing solution by configuring the ultraviolet transmitting member 157 with, for example, sapphire glass. However, when the ultraviolet transmitting member 157 is made of sapphire glass, it is necessary to select a light source that can transmit light through the sapphire glass and emit light having a wavelength effective for processing the workpiece. Especially when hydrogen fluoride is used, it generates a gas that is toxic to the human body, so it is necessary to remove the gas with a scrubber or the like to make it non-toxic.

The tub container 150 is arranged above the support platen 140 . Therefore, the tub container 150 can move in the moving direction M by moving the support surface plate 140 in the moving direction M (the direction in which the rails 131 extend). As shown in FIG. 4, the tub container 150 is positioned by a pair of positioning members 153, 153 on both sides of the width direction W orthogonal to the moving direction (the direction in which the rail 131 extends) M at the lower end of the tub container 150. It is attached to the support surface plate 140 in the state shown in FIG. The pair of positioning members 153 , 153 are spaced apart in the width direction W corresponding to the length of the tub container 150 in the width direction W. The pair of positioning members 153, 153 includes a positioning body portion 153a extending a predetermined length in the moving direction M of the flat processed portions SP1, SP2 (the direction in which the rail 131 extends), and a positioning body portion 153a extending in the moving direction of the flat processed portions SP1, SP2 (the rail 131 and positioning extensions 153b extending inward at both ends of the direction of extension M). The pair of positioning members 153, 153 regulates the movement of the tub container 150 in the width direction W by the positioning body portion 153a, and regulates the moving direction (railway direction) of the flat processed portions SP1, SP2 in the tub container 150 by the positioning extension portion 153b. It is fixed to the upper surface of the support surface plate 140 in a state where movement in the direction M in which 131 extends is restricted. Also, the positioning member 153 may be a general clamping mechanism.

As shown in FIG. 4, the bottom plate 151 is formed with a plurality of slit grooves 151a (bottom plate side through openings) through which ultraviolet light passes. A plurality of slit grooves 151 a formed in the tub container 150 are provided at positions corresponding to a plurality of slit grooves 141 formed in the support surface plate 140 . In addition, the support surface plate 140 has a portion through which the ultraviolet light from the UV lamp 125 is not transmitted, thereby preventing ultraviolet light irradiation to the portion through which the ultraviolet light is not to be transmitted, thereby minimizing deterioration of the tub container 150 and the like. Suppress.

An ultraviolet transmitting member 157 is attached to the lower side of the bottom plate 151 of the tub container 150, as shown in FIG. The ultraviolet transmitting member 157 is a transmitting member capable of transmitting ultraviolet light from the UV lamp 125 arranged below the support surface plate 140 . In this embodiment, the ultraviolet transmitting member 157 is made of quartz, for example.

The ultraviolet transmitting member 157 is attached to the lower surface of the bottom plate 151 of the tub container 150 so as to block the plurality of slit grooves 151a (bottom plate side through openings) formed in the bottom plate 151 of the tub container 150 . The UV-transmitting member 157 is disposed below the bottom plate 151 of the tub container 150, and the periphery of the UV-transmitting member 157 is subjected to water-stopping treatment at the water-stopping treatment portion 157a. That is, the ultraviolet transmitting member 157 is attached to the bottom plate 151 in a state in which the water stopping treatment is applied to the water stopping portion 157a.

Here, regarding the arrangement of the water stop treatment portion 157a, the plurality of slit grooves 141 formed in the support surface plate 140 are provided in portions of the ultraviolet transmitting member 157 that do not correspond to the water stop treatment portion 157a. As a result, the waterproof treatment portion 157a is arranged at a position where the ultraviolet light from the UV lamp 125 does not reach. Therefore, it is possible to suppress deterioration due to the ultraviolet light emitted from the UV lamp 125 in the waterproof treatment portion 157a.

As shown in FIG. 3, the bottom plate 151 of the tub container 150 is provided with a catalyst pad 155, which is an example of a pad portion, in which a catalyst layer is formed with a predetermined thickness by sputtering or the like on the entire surface. Catalyst pad 155 has a catalyst layer for planarizing the surface of workpiece W by catalyst-based etching. The catalyst pad 155 is arranged above the bottom plate 151 of the tub container 150 . A plurality of slit grooves 155 a are formed in the catalyst pad 155 . The plurality of slit grooves 155 a formed in the catalyst pad 155 are provided at positions corresponding to the plurality of slit grooves 151 a formed in the tub container 150 and the plurality of slit grooves 141 formed in the support surface plate 140 . In other words, the plurality of slit grooves 151a formed in the tub container 150, the plurality of slit grooves 141 formed in the support surface plate 140, and the plurality of slit grooves 155a formed in the catalyst pad 155 continuously penetrate in the vertical direction. , and is configured to allow transmission of ultraviolet light from the UV lamp 125 . The catalyst pad 155 is preferably resistant to water components or oxygen components at 90 degrees or less. The slit grooves 155a do not need to have the same size, pitch, and the like, and need not be continuous. Also, the slit groove 155a may be a hole or the like. For example, when it is difficult to remove the support surface plate 140, the slit grooves 155a formed in the catalyst pad 155 may be adjusted according to the shape of the workpiece and the machining operation. It may be used by optimizing the pitch and the like, and attaching it to a support surface plate 140 provided with a plurality of slit grooves 141 with adjusted dimensions and pitch. For example, when it is desired to partially transmit ultraviolet rays (UV), the through holes of the slit grooves 155a formed in the catalyst pad 155 may be optimized. Also, the plurality of slit grooves 151a formed in the tub container 150 are the same.

As the material of the catalyst pad 155, rubber, resin, ceramics, glass, metal, etc., which are resistant to the processing solution and gas are used. A transition metal such as Pt can be used as the catalyst. A metallurgical bond is desirable if the catalyst is laminated with a metal. Examples of metals include chromium, gold, and platinum.

Above the tub container 150, as shown in FIG. 3, a main shaft 160 having a circular cross section is vertically installed, and the main shaft 160 is rotatably held by a sleeve 161 in a vertical position. The main shaft 160 is rotated by a drive motor 171 as first drive means. The sleeve 161 is moved up and down by a drive part 172 such as a drive cylinder or a ball screw as a second drive means, and the main shaft 160 is moved back and forth with respect to the catalyst pad 155 accordingly. A polishing head 163 is provided at the lower end of the spindle 160 . A workpiece W is held on the lower surface of the polishing head 163 . The polishing head 163 is configured to be able to hold the workpiece W, and also functions as a holder as first holding means. Drive parts 172 such as the main shaft 160, the drive motor 171, and the drive cylinder are provided on or above the base 110. As shown in FIG.

As shown in FIG. 2, a main driving part PD is provided between the left and right flat processing parts SP1 and SP2. Details of the main drive part PD are shown in FIG. As shown in FIG. 5, the main drive unit PD includes a bracket plate 181 provided in a vertical posture on the base 110. On the bracket plate 181, a vertically extending shaft 190 is supported by bearing members 191 and 191. 192 is rotatably held. An output shaft 182 a of a drive motor 182 vertically provided along the bracket plate 181 is inserted into and connected to the center of the lower end of the shaft 190 .

As shown in FIG. 5, one ends of a pair of link plates 183 and 184 extending horizontally in the horizontal direction are connected to the outer periphery of the intermediate portion of the shaft 190 so as to be relatively rotatable. A link plate 183 connected to the lower side of the shaft body 190 is bent upward in the middle, and the other end is connected to the support surface plate 140 of the flat processing part SP1 so as to be relatively rotatable via a connecting shaft 183a. (See Figure 2). On the other hand, the link plate 184 connected to the upper side of the shaft body 190 is bent downward in the middle, and the other end is relatively rotatably connected to the support surface plate 140 of the flat processing part SP2 via the connecting shaft 184a. Concatenated. Here, the upper surfaces of the support surface plates 140 of the flat processing portions SP1 and SP2 are positioned on the same horizontal plane.

As shown in the enlarged view of FIG. 5, the intermediate portion of the shaft body 190 is such that the shaft cores C1 and C2 of the shaft portions 193 and 194 to which the link plates 183 and 184 are connected are aligned with the shaft center C (driving center) of the shaft body 190. It is eccentric from the axis of the output shaft 182a of the motor 182). That is, the shaft cores C1 and C2 of the shaft portion 193 to which the link plate 183 is connected and the shaft portion 194 to which the link plate 184 is connected are separated from the shaft center C of the shaft body 190 by the same amount d in the radial direction. They are located at symmetrical positions of 180 degrees.

Therefore, when the shaft 190 is rotated about its axis C by the drive motor 182 , the shafts C 1 and C 2 of the shafts 193 and 194 are rotated around the axis C of the shaft 190 . Along with this, each support surface plate 140 is reciprocated on the same straight line via the link plates 183 and 184 in opposite phases within a distance (amplitude) of 2d. At this time, an example of the reciprocating movement is 2d=3 mm, and the rotation speed of the shaft 190 (the reciprocating vibration frequency of the support surface plate 140) is 500 rpm. Note that the value of the distance 2d is not limited to 3 mm, and may be any value such as 10 mm.

When flattening the lower surface (surface to be processed) of the workpiece W by the flattening apparatus having such a structure, gas necessary for the catalytic reaction and In the case of a liquid, for example, a liquid containing at least one of hydrogen fluoride (HF), a water component, a hydrogen peroxide component, and a sulfuric acid component, the workpiece is driven by the driving part 172 (see FIG. 3). W is brought close to or in contact with the catalyst pad 155 . In this state, the drive motor 182 linearly reciprocates the support surface plate 140 and the tub container 150 provided thereon in the horizontal direction along the rails 131 . Alternatively, the workpiece W may be rotated by rotating the main shaft 160 with the drive motor 171 (see FIG. 3).

That is, the surface of the workpiece W to be processed and the catalyst pad 155 formed with the catalyst layer with which the workpiece W abuts are brought into contact with each other or brought close to each other, and then they are caused to reciprocate relative to each other. At this time, this reciprocating movement is used not as a sub-machining such as averaging such as rocking, but as a role of a main machining that takes charge of the main machining rate. As a result, the surface of the workpiece W to be processed is flattened with a high degree of precision on the atomic level by the catalyst-based etching process. At this time, since the support surface plates 140 of the left and right flat processing parts SP1 and SP2 are reciprocated (vibrated) on the same straight line in opposite phases, the mutual vibrations are canceled and the vibrating force on the base 110 is small enough to prevent its vibration.

The first apparatus example of the light irradiation catalyst standard etching apparatus 100 according to the present invention configured as described above has the following advantages compared with the conventional light irradiation catalyst standard etching apparatus.
Conventionally, the platen used in the photoirradiation catalyst-based etching method is made of a material such as quartz that has excellent transparency to the ultraviolet light emitted from the light source of the ultraviolet irradiation unit. However, in recent years, short-wavelength UV lamps with a dominant output wavelength of around 180 nm or around 250 nm have come to be used so that the light irradiation catalyst-based etching process can proceed at a higher speed. As the output dominant wavelength is changed, it becomes necessary to select a light-transmitting surface plate material that can transmit short-wavelength light such as around 180 nm, which tends to increase costs. In addition, by using a short-wave UV lamp, even if quartz that can transmit ultraviolet light of the UV lamp around 180 nm is prepared, the surface plate that can transmit light will be damaged by the light of the UV lamp. . Therefore, it is necessary to replace the platen, and the platen may become a consumable item.

Furthermore, in recent years, there has been a need for larger workpieces. As an example, as the size of the workpiece was changed from 2 inches to 8 inches, it became necessary to increase the size of the light-transmissible surface plate used for processing by four times. In the future, there is a high possibility that the size of the workpiece will increase, and a large-area quartz material that can transmit short-wavelength light will be required. The price of a material such as quartz rises as the material corresponds to a shorter wavelength or as the area increases. In addition, when making a surface plate that can transmit short-wavelength light with a large area such as quartz, processing technology such as advanced surface polishing, special jigs and equipment for manufacturing the surface plate, etc. are required. Cost tends to be high. If the light-transmissive surface plate does not uniformly transmit light over the entire surface of the workpiece to be processed, it will adversely affect the planarization of the workpiece. Furthermore, as the size of the workpiece increases, the area of the workpiece that contacts the surface of the catalyst at one time tends to increase as compared to the case of using a workpiece as small as 2 inches. As the contact area of the workpiece with the catalyst surface increased, it became necessary to apply a high load to the surface plate in order to optimize the load per unit area during machining of the workpiece. .

As in the technology described in Japanese Patent Application Laid-Open No. 2012-64972 described in Background Art, it is configured with a head portion that holds a workpiece and a surface plate that is larger than the head portion, and the surface plate is rotated. In the case of the conventional photo-irradiation catalyst-based etching method configured to allow the light to pass through, the shaft supporting the light-transmitting platen and transmitting the power is a UV lamp or the like that outputs light when the light-transmitting platen rotates. It had to be placed at least in the center or on the outermost perimeter to avoid contact. However, when trying to maintain the load per unit area due to the increase in size of the surface plate, it becomes necessary to apply a higher load to the surface plate that can transmit light than when the size of the workpiece is as small as 2 inches. . Moreover, since the size of the workpiece is larger than before, the moment load is likely to be applied. If the size of the surface plate is increased while the thickness remains the same as that of the conventional one, the surface plate is made of quartz, sapphire, or the like. Therefore, it was necessary to increase the thickness of the surface plate so as not to damage it, which led to an increase in cost. In addition, some surface plates cannot be manufactured technically depending on the thickness, size, shape, and wavelength of light to be transmitted. Furthermore, the power of light with short wavelengths tends to be attenuated, which limits the distance from the UV lamp to the workpiece. Therefore, in the light irradiation catalyst standard etching device, the light from the ultraviolet irradiation part can be transmitted to the processing surface of the workpiece, and the strength can be secured. A surface plate was required.

On the other hand, in the first apparatus example of the light irradiation catalyst standard etching apparatus 100 according to the present invention, the conventional surface plate made of quartz is reconsidered in order to deal particularly with an increase in size, load, and short-wavelength light. By forming the support surface plate 140 with SUS304, SUS316, etc., the strength is ensured and the thickness is maintained. In addition, as a measure to reduce the number of consumable parts, the support surface plate 140 is composed of members that are not consumable parts, and an ultraviolet ray transmitting member 157 is arranged so as to block the slit groove 141 of the support surface plate 140 to transmit ultraviolet light. configured as As a result, the ultraviolet transmitting member 157 can be replaced as a consumable part without using the support surface plate 140 as a consumable part. The light irradiation catalyst-based etching apparatus 100 configured in this way can secure the strength of the supporting surface plate 140 while accelerating the catalyst-based etching by the ultraviolet light emitted from the UV lamp 125 . Therefore, even if the total load of the members arranged on the upper side of the support surface plate 140 increases, damage to the support surface plate 140 can be suppressed.

Further, the light irradiation catalyst standard etching apparatus 100 according to the present invention includes the support surface plate 140, the tub container 150, the ultraviolet transmitting member 157, and the catalyst pad 155 described above. In order to allow ultraviolet light to pass through the workpiece, holes and openings for light transmission are processed in the support surface plate 140, the tub container 150, and the catalyst pad 155 in accordance with the processing operations for averaging and flattening. Secured the necessary transmission space for light to hit the workpiece. By fitting an ultraviolet transmitting member 157 such as quartz, which is most suitable for transmitting light, into the transmitting space, it is possible to prevent the liquid or gas stored in the tub container 150 required for processing from flowing into the UV lamp area from the processing area.

In addition, in the light irradiation catalyst standard etching apparatus 100 according to the present invention, the UV transmitting member 157 is selected optimally in consideration of the cost, the chemical solution and gas used in the processing, and the wavelength of light to be transmitted. For example, it was constructed using a quartz substrate that is used in the mass production process. A semiconductor-grade quartz substrate that guarantees light transmission can be used in a clean room, and the quality of light transmission is stable. It can be obtained at a lower cost than creating a dedicated ultraviolet transmitting member. Flatness is also stable. Furthermore, quartz substrates can be used with large diameters such as 300 mm. The quartz used in the ultraviolet transmitting member 157 deteriorates due to the use of short-wave UV light, but since the quartz substrate is inexpensive, it can be replaced inexpensively. A substrate formed of sapphire can also be used for the transmitting portion, depending on the compatibility of the transmitted wavelength light and the chemical solution or gas. When a substrate such as quartz is used as the ultraviolet transmitting member 157, the substrate itself is thin, such as 1 mm, and is easily damaged. there is Also, the tub container 150 is made of a material that is resistant to liquids and gases used in processing.

In addition, in the first apparatus example of the light irradiation catalyst-based etching apparatus 100 according to the present invention, catalyst-based etching using electricity is also performed. In the first apparatus example of the light irradiation catalyst standard etching apparatus 100, the configuration of each electrode used when processing is performed by electrical action will be described. Electrodes for plating formation, electrodes for electropolishing, electrodes for UV electricity, and the like are arranged in the photoirradiation catalyst-based etching apparatus 100 . FIG. 6 is a diagram showing each electrode part in the first apparatus example of the light irradiation catalyst standard etching apparatus.

As shown in FIG. 6, the polishing head 163 is provided with a head-side direct-current voltage power supply section 165 used when irradiating ultraviolet rays (UV), and a head-side auxiliary electrode 164a used when plating or electropolishing. be done. The tub container 150 is provided with the reference electrode 103 and the conducting section 101 .

Inside the tub container 150 , the catalyst pad 155 is fixed to the bottom plate 151 of the tub container 150 with an insulating polycarbonate screw 102 in a state where the washer constituting the current-carrying part 101 is in contact with the surface of the catalyst pad 155 . there is The surface of the catalyst pad 155 becomes a working electrode 155b by electricity from the current-carrying portion 101 . On the tub container 150 side, since the machining solution is stored in the tub container 150, power is supplied between the working electrode 155b, which is the surface of the catalyst pad 155, the head-side auxiliary electrode 164a, and the reference electrode 103. Thus, it is possible to form plating on the working electrode 155b and to suppress electropolishing. This makes it possible to maintain the catalytically active state of the catalyst surface. Therefore, on the surface of the catalyst pad 155, for example, it becomes easier to form a nickel catalyst layer made of electroplating.

In the polishing head 163, when the polishing head 163 is immersed in the processing solution stored in the tub container 150, current flows between the head-side auxiliary electrode 164a and the working electrode 155b, which is the surface of the catalyst pad 155. Electropolishing or plating can be applied to the catalyst surface. As a result, the catalytically active state of the catalyst surface can be maintained and regenerated, so that the durability of the catalyst-based etching process on the contact surface between the catalyst and the workpiece W is improved.

For example, in the case of ultraviolet rays (UV), a head-side DC voltage power supply section 165 that supplies a DC voltage power supply (+) to the workpiece holding section 166 of the polishing head 163 is provided. Below, a workpiece W that can be processed by the light irradiation catalyst-based etching method (as an example, a substrate, an epitaxial growth film or a film formation surface, a three-element mixed crystal, a four-element mixed crystal, In, Al, Si, C, Ga, N A workpiece containing at least one of , O, and Zn, a workpiece such as SiC, GaN, gallium oxide, diamond, and aluminum gallium nitride) is attached. A conductive liquid or gas used in the photoirradiation catalyst-based etching method is placed below the workpiece W, and a catalyst pad 155 with which the workpiece W abuts is placed under the liquid or gas. A cathode is provided between the ultraviolet transmitting member 157 from below the catalyst pad 155 . For the cathode, for example, platinum or the like that is resistant to light such as ultraviolet rays (UV) required for processing the workpiece is used, or platinum, gold, or the like is plated. The size of the cathode wire is not particularly limited as long as it has a diameter of, for example, φ1 to φ0.3 mm and is a size that does not break the wire and allows transmission of light such as ultraviolet rays (UV) necessary for processing. The cathode may be made of a thin film of several micrometers like a wiring pattern. Cathode wires and films can be appropriately selected according to the size of one or more slit grooves 155 a of the catalyst pad 155 . A DC voltage power source (-) may be electrically connected to the cathode. The head-side DC voltage power supply section 165 is not particularly limited in parts as long as it is resistant to light, liquid, and gas used in processing and has a low electrical resistance value. A specific bias voltage to be used is 2 V to over ten volts when the workpiece W is SiC. If the workpiece W itself also has resistance, ideally, the electrode should be brought into contact with the entire back surface of the workpiece W. FIG. This is because when the workpiece W itself has resistance, the net bias voltage is lowered on the machining surface away from the electrode, and the machining speed is slowed down.

Further, in the present invention, the rate of oxidation of the surface of the workpiece W is rate-determining. It is preferable to carry out processing by the photoirradiation catalyst-based etching method under conditions that satisfy the relationship "flatness processing rate of the surface to be processed≧speed of oxidation of the surface to be processed by electrical action or light irradiation". After blocking, retreating, or turning off light such as ultraviolet rays used in the light irradiation catalyst-based etching method, the light-burned surface layer of the surface of the workpiece W is removed by the catalyst-based etching method. It is preferable to remove by finishing such as.

Here, as in the first apparatus example of the light irradiation catalyst standard etching apparatus 100, in the case of a configuration in which reciprocation is performed with a small amplitude, the movable range is narrow. As shown in FIG. 6, unless the head-side auxiliary electrode 164a is attached to the polishing head 163, the polishing head 163 in the processing solution should be avoided while the support surface plate 140 is moving with a large swing. However, the auxiliary electrode (not shown) must be put in and taken out of the liquid, and plating and electrolytic polishing must be performed, which is difficult as an apparatus configuration. On the other hand, as shown in FIG. 6, by providing an auxiliary electrode in the head-side auxiliary electrode 164a of the polishing head 163, as the support surface plate 140 advances due to the large swing motion, the workpiece centering on the processed portion is Plating and electropolishing can be performed. When plating or electropolishing, there are two possible methods: one is to keep the work piece in contact with the catalyst pad, and the other is to adjust the height of the catalyst pad from the catalyst surface before plating or electropolishing. . During plating or electropolishing using the head-side auxiliary electrode 164a on the polishing head 163, uniform plating can be obtained by plating while performing an averaging operation. The shape of the head-side auxiliary electrode 164a (for plating or electropolishing) may be tapered at the outer peripheral portion, allow gas that inhibits reaction to escape, have grooves to agitate the fluid necessary for reaction, or form a polishing head. By increasing the rotational speed, plating and electropolishing can be performed while oxygen and hydrogen generated during plating and electropolishing on the catalytic surface of the catalyst pad are blown in the outer peripheral direction of the auxiliary electrode portion. If the surface area of the catalyst layer is made smaller than the surface of the workpiece W, the local processing amount of the surface of the workpiece W can be reduced by controlling the position and staying time of the small catalyst pad 155 with respect to the surface of the workpiece W. can be controlled. That is, local processing can be performed by numerical control.

(Second device example of light irradiation catalyst standard etching device)
A second apparatus example of the light irradiation catalyst standard etching apparatus will be described. FIG. 7 is a perspective view showing a second device example of the light irradiation catalyst reference etching device 200. As shown in FIG. FIG. 8 is a perspective view of a second apparatus example of the light irradiation catalyst reference etching apparatus 200 as viewed from below. FIG. 9 is a partial cross-sectional view mainly showing the configuration of the supporting surface plate 210 and the tub container 220 of the second example of the light irradiation catalyst standard etching apparatus 200. As shown in FIG.

As shown in FIGS. 7 to 9, the light irradiation catalyst standard etching apparatus 200 of the second apparatus example is in a state in which the workpiece W and the catalyst layer 230 of the catalyst pad 240 are immersed in a gas atmosphere or liquid. It is a structure in which the workpiece is processed by The light irradiation catalyst-based etching apparatus 200 is provided with a supporting surface plate 210 (surface plate), a tub container 220 holding water 201 as an example of gas or liquid, and a catalyst layer 230 having at least a catalyst substance on the surface. The catalyst pad 240 is immersed in the water 201 and placed in the tub container 220, and the workpiece W is held and immersed in the water 201 and placed in the tub container 220 in contact with or close to the catalyst layer 230. It comprises a polishing head 260, a driving mechanism 270 for relatively moving the catalyst pad 240 and the polishing head 260 while bringing them into contact or approaching each other, and a UV lamp 225 (ultraviolet irradiation section).

Depending on the type of workpiece (for example, SiC), there may be a gap between the plurality of through holes 221a (see FIG. 9) of the tub container 220 through which the ultraviolet light passes and the plurality of through holes 241 (see FIG. 9) of the catalyst pad 240. a DC voltage power supply (+) for the polishing head 260, a workpiece holder for holding the polishing head 260 arranged on the back surface of the workpiece, the workpiece W, and a solution used for machining. , the cathode provided between the plurality of through-holes 221a of the tub container 220 through which the ultraviolet light passes and the plurality of through-holes 241 of the catalyst pad 240 can be electrically connected to the DC voltage power supply (-) connected to the cathode. state.

The support surface plate 210 is made of a material that is not suitable for transmitting light of wavelengths effective for processing a workpiece. Specifically, as shown in FIGS. 7 and 8, the support surface plate 210 is formed in a disc shape and is made of a material that does not transmit ultraviolet light. The support surface plate 210 is made of a metal material, a material that is resistant to ultraviolet rays and has strength, or a material that has undergone a surface treatment that is resistant to ultraviolet rays. For example, the support surface plate 210 is made of metal such as SUS (stainless steel) that does not transmit ultraviolet light, ceramics that does not transmit ultraviolet light, resin that does not transmit ultraviolet light, or a composite material thereof. In order to make the surface more resistant to ultraviolet light, liquids or gases, the surface is coated or plated with platinum group metals or gold, or treated with a resistant film such as a Teflon (registered trademark) coating. It's okay to be. Therefore, the supporting surface plate 210 is ensured to have a higher strength than the case where the whole is made of quartz or the like in order to transmit ultraviolet light. More preferably, the support platen 210 is made of SUS304, SUS316, or the like, which is suitable for use in clean rooms and resistant to ultraviolet rays.

As shown in FIG. 8, the support platen 210 has a plurality of through-hole groups 211 through which the ultraviolet light emitted from the UV lamps 225 passes. The plurality of through-hole groups 211 are formed by an aggregate having a circular outer shape and configured by a plurality of through-holes 211a (surface plate-side through openings). The plurality of through-holes 211a are formed at positions through which ultraviolet light from a UV lamp 225 (described later) arranged below the support surface plate 210 is transmitted. is formed at a position through which the ultraviolet light of is transmitted. The plurality of through-hole groups 211 are circumferentially spaced apart from the center of the support surface plate 210 at predetermined radially outward positions. The plurality of through-holes 211a are arranged such that when three adjacent through-holes 211a are viewed, the three adjacent through-holes 211a are located at the vertices of an equilateral triangle. The plurality of through-holes 211a forming the through-hole group 211 has a diameter R of, for example, 5 mm, and an interval L between the adjacent through-holes 211a is 10 mm.

A UV lamp 225 (ultraviolet irradiation section) that is used for catalyst-based etching and that emits ultraviolet light is arranged below the support surface plate 210 .
An upper end portion of a lower rotating shaft 271 in the drive mechanism 270 is connected to the center of the lower surface of the support platen 210 . The support platen 210 can be rotated by rotating the lower rotating shaft 271 .
On the upper surface of the support surface plate 210, a circular liquid-storing tub container 220 (tub portion) is mounted. The tub container 220 is detachable from the support surface plate 210 .

The tub container 220 is open at the top and is arranged above the support surface plate 210 . The tub container 220 includes a disk-shaped bottom plate 221 having a plurality of through holes 221 a (bottom plate side through openings) through which ultraviolet light passes, and a cylindrical peripheral wall portion 222 rising from the peripheral edge of the bottom plate 221 . The tub container 220 is formed in the shape of a tub capable of holding a working solution or gas. The tub container 220 is made of, for example, a material such as resin, metal, ceramics, or a glass-based metal oxide having a low transmittance of ultraviolet light. The plurality of through holes 221 a of the tub container 220 are provided at positions corresponding to the plurality of through holes 211 a formed in the support platen 210 . In addition, the support surface plate 210 has a portion through which the ultraviolet light from the UV lamp 225 does not pass, thereby preventing the ultraviolet light from irradiating the portion through which the ultraviolet light should not pass, thereby minimizing deterioration of the tub container 220 and the like. Suppress.

An ultraviolet transmitting member 212 is attached to the lower side of the bottom plate 221 of the tub container 220 . The ultraviolet transmitting member 212 is a transmitting member capable of transmitting ultraviolet light from a UV lamp 225 arranged below the support surface plate 210 . In this embodiment, the ultraviolet transmitting member 212 is made of quartz, for example.

A processing solution is stored in the tub container 220 . In the second apparatus example of the photo-irradiation catalyst-based etching apparatus 200 of the present embodiment, water, for example, is used as the processing solution so as to cause hydrolysis on the processing surface of the workpiece. When hydrolysis is caused to perform catalyst-based etching, the work is brought into contact with the catalyst immersed in the work solution with the work solution interposed between the work surface and the catalyst. The relative motion causes the hydrolysis reaction on the processing surface of the workpiece to generate decomposition products. Then, the processed surface of the workpiece is processed by eluting the decomposition products into the processing solution.

Here, if an aqueous hydrofluoric acid solution is used as the processing solution, the quartz will be dissolved by the aqueous hydrofluoric acid solution if the ultraviolet transmitting member 212, which will be described later, is made of quartz, for example. Therefore, in the light irradiation catalyst standard etching apparatus 200 that irradiates ultraviolet light, when using the ultraviolet transmitting member 212 made of quartz, the hydrofluoric acid aqueous solution cannot be used as the processing solution. Therefore, in this embodiment, water is used as the working solution.

Since the hydrofluoric acid aqueous solution does not dissolve the sapphire glass, the hydrofluoric acid aqueous solution may be used as the processing solution by configuring the ultraviolet transmitting member 212 with, for example, sapphire glass. However, when the ultraviolet transmitting member 212 is made of sapphire glass, the sapphire glass does not transmit ultraviolet rays of a specific short wavelength compared to quartz, so if the wavelength is too short, it may not be able to handle ultraviolet light. Therefore, it is necessary to use a UV lamp 225 that emits light of a wavelength that can be transmitted.

The ultraviolet transmitting member 212 is attached to the bottom surface of the bottom plate 221 of the tub container 220 so as to block the plurality of through holes 221a (bottom plate side through openings) of the bottom plate 221 of the tub container 220 . The ultraviolet ray transmitting member 212 is disposed below the bottom plate 221 of the tub container 220, and the peripheral edge portion of the ultraviolet ray transmitting member 212 is subjected to water stopping treatment at the water stopping portion 212a. As a result, the ultraviolet transmitting member 212 is attached to the bottom plate 221 in a state in which the water stop treatment is applied to the water stop treatment portion 212a.

Here, regarding the arrangement of the water stop treatment portion 212a, the plurality of through holes 221a of the support platen 210 are provided in portions of the ultraviolet transmitting member 212 that do not correspond to the water stop treatment portion 212a. In other words, the water stop processing part 212a is arranged at a position where the ultraviolet light from the UV lamp 225 does not reach. Therefore, it is possible to suppress deterioration due to the ultraviolet light emitted from the UV lamp 225 in the waterproof treatment portion 212a.

Above the bottom plate 221 of the tub container 220, as shown in FIG. 9, a catalyst pad 240 is provided as an example of a pad portion, in which a catalyst layer 230 is formed with a predetermined thickness by sputtering or the like on the entire surface. there is Catalyst pad 240 has a catalyst layer 230 for planarizing the surface of workpiece W by a catalyst-based etch. The catalyst pad 240 is arranged above the bottom plate 221 of the tub container 220 . A plurality of through holes 241 are formed in the catalyst pad 240 .

The plurality of through holes 241 formed in the catalyst pad 240 are provided at positions corresponding to the plurality of through holes 221 a formed in the tub container 220 and the plurality of through holes 211 a formed in the support surface plate 210 . That is, the plurality of through-holes 221a formed in the tub container 220, the plurality of through-holes 211a formed in the support surface plate 210, and the plurality of through-holes 241 formed in the catalyst pad 240 continuously pass through in the vertical direction. , and is configured to allow transmission of ultraviolet light from the UV lamp 225 . Catalyst pad 240 is preferably resistant to water components or oxygen components at 90 degrees or less. The through-holes 241 do not need to have the same size, pitch, and the like, and need not be continuous. For example, when it is difficult to remove the support surface plate 210, the size and pitch of the plurality of through holes 241 formed in the catalyst pad 240 may be changed according to the shape of the workpiece and the machining operation. It may be used by being attached to a support surface plate 210 provided with a plurality of through holes 211a having optimized dimensions and pitches. For example, if it is desired to partially transmit ultraviolet rays (UV), the through holes 241 of the catalyst pad 240 may be optimized. Also, the plurality of through holes 221a formed in the tub container 220 are the same.

As the material of the catalyst pad 240, processing solution, rubber, resin, ceramics, glass, metal, etc., which are resistant to gases are used. A transition metal such as Pt can be used as the catalyst. A metallurgical bond is desirable if the catalyst is laminated with a metal. Examples of metals include chromium, gold, and platinum. Here, the tub container 220 may store gas.

Above the tub container 220, as shown in FIG. The upper rotating shaft 272 is arranged on the upper side of the tub container 220 at a position radially displaced from the center of the bottom plate 221 of the tub container 220 . The upper rotating shaft 272 is rotatably held in a vertical position with respect to the sleeve 261, as shown in FIG. The upper rotating shaft 272 is rotated by a driving motor 273 as first driving means. The sleeve 261 is moved up and down by a driving part 274 such as a driving cylinder or a ball screw as a second driving means, and the upper rotating shaft 272 moves back and forth toward and away from the catalyst pad 240 accordingly. be moved in the direction A polishing head 260 is provided at the lower end of the upper rotating shaft 272 . A workpiece W is held on the lower surface of the polishing head 260 . The polishing head 260 is configured to be able to hold the workpiece W, and also functions as a holder as first holding means.

Next, operation control of the polishing head 260 will be described. 10A and 10B are diagrams for explaining the control of starting the catalyst-based etching operation after the workpiece W held by the polishing head 260 contacts or approaches the surface of the catalyst pad 240. FIG.

The upper rotary shaft 272 and the polishing head 260 are connected by an inclination movable mechanism 262 as shown in FIG. The inclination movable mechanism 262 is movable in a range including a state in which the surface of the catalyst pad 240 and the surface of the workpiece W are parallel and a state in which the surface of the catalyst pad 240 and the surface of the workpiece W are not parallel. Catalyst pad 240 and/or workpiece W can be tilted so as to. In this embodiment, the tilt movable mechanism 262 is capable of tilting the polishing head 260 with respect to the horizontal direction within a range of 360°. can be tilted.

The inclination movable mechanism part 262 has a height difference H of both ends of the surface of the catalyst pad 240 or the surface of the workpiece W of 0.01 mm or more in the surface direction of the surface of the catalyst pad 240 or the surface of the workpiece W. At least one of the catalyst pad 240 and the workpiece W can be tilted up to a certain extent. At least one of the catalyst pad 240 and the workpiece W is tilted so that the inclination angle α of the surface of the workpiece W with respect to the surface of the catalyst pad 240 is 0.03 degrees or more. can be tilted. As a result, the surface of the workpiece W and the surface of the catalyst pad 240 can be caused to follow each other by the tilting movable mechanism 262 . Therefore, it is possible to improve the surface followability of the workpiece W when the surface of the workpiece W is brought into contact with or close to the surface of the catalyst pad 240 . The catalyst pad 240 has a catalyst layer for removing only the contacting or adjacent portion of the surface of the workpiece W by catalyst-based etching (catalyst-based reaction).

When performing the flattening process necessary for catalyst-based etching, as shown in FIG. 10, the rotation of the upper rotating shaft 272 is stopped and the lower rotating shaft 271 (see FIG. 7) is stopped and supported. With the surface plate 210 stopped, the driving part 274 as the second driving means lowers the sleeve 261 to lower the upper rotating shaft 272, so that the surface of the workpiece W is brought into contact with the surface of the catalyst pad 240. They are brought into contact or close to each other so that the film does not peel off. After that, by rotating the upper rotary shaft 272 and the lower rotary shaft 271 by the driving motor 273 as the first driving means, and rotating the supporting surface plate 210, catalyst-based etching (catalyst-based reaction) is performed. A necessary planarization process is performed by a planarization process execution unit (not shown). As a result, while the catalyst pad 240 is stopped, the surface of the workpiece W can be brought into contact with or close to the surface of the catalyst pad 240 so that the catalyst film does not come off. It is possible to prevent the catalyst layer from peeling off. Therefore, since peeling of the catalyst layer on the surface of the catalyst pad 240 can be suppressed, the processing quality of the workpiece W can be improved.

Conventionally, for example, while the surface of the workpiece W is being processed by the machining operation of the main machining, the surface of the workpiece W is brought into contact with or close to the surface of the catalyst pad 240, and the workpiece W and the catalyst pad 240 are brought into contact with each other. The end of the workpiece W comes into contact with the catalyst pad 240 due to the inclination angle of , and the catalyst portion of the catalyst pad 240 hit by the edge of the workpiece W is the edge of the workpiece W. Depending on the chamfered state, as shown in FIG. 11, there is a problem that the peeled portion X is peeled off.
As a countermeasure against this, the surface of the workpiece W required for processing is brought into contact with or close to the surface of the catalyst pad 240, and then the upper rotating shaft 272 is rotated by the driving motor 273 as the first driving means. By rotating the lower rotary shaft 271 to rotate the support surface plate 210 for the main machining operation, the catalyst of the catalyst pad 240 is not peeled off compared to the conventional machining.

In addition, it is possible to physically reduce the risk of the catalyst layer 230 peeling off during mass production. When the work W sticks to the surface of the catalyst pad 240 from which the catalyst layer 230 has been peeled off during the catalyst-based etching process due to the phenomenon of water sticking, if the material of the catalyst pad 240 is rubber, for example, Due to the wet adhesion phenomenon between the workpiece W and the catalyst pad 240 and the gripping force generated between the workpiece W and the catalyst pad 240 and the rubber, the workpiece W is removed from the polishing head 260 holding the workpiece W. There is a risk that W will come off and the workpiece W will fly out to the outer periphery and be damaged by the machining operation of the catalyst-based etching apparatus 200 . However, if the catalyst layer 230 does not come off, the risk can be reduced.

Generally, it is better to contact or approach the surface of the workpiece W to the catalyst pad 240 while machining the surface of the workpiece W in the machining operation of the main machining. Theoretically, the possibility that the workpiece W sticks to the catalyst pad 240 due to the water sticking phenomenon is lower than when the machining operation is performed after contact. The risk that the workpiece W adhered to the catalyst pad 240 will come off from the retainer (holding portion) of the polishing head 260 and be damaged is due to the fact that the surface of the workpiece W is attached to the catalyst pad 240 while performing machining in the main machining operation. Abutment or close proximity is preferable because a dynamic frictional resistance is generated between the workpiece and the pad, which is lower than the static frictional force. However, in the present invention, the catalyst of the catalyst pad 240 is prevented from peeling off by carrying out the processing operation after the surface of the workpiece W is brought into contact with the catalyst pad 240 . Catalyst stripping of catalyst pads is a particular problem in catalyst-based etching.

In addition, the processing operation of the main processing performed on the surface of the workpiece W is the minimum amount of operation necessary for establishment of polishing processing.
In this embodiment, for example, the processing operation of the main processing is an operation that mainly produces a processing rate, and in the case of the catalyst-based etching apparatus shown in FIG. In the atmosphere, in a state in which the workpiece W and the catalyst pad 240 are in contact with each other or close to each other, the upper rotating shaft 272 is rotated by the driving motor 273 as the first driving means, and the lower rotating shaft 271 is rotated. This is the operation of rotating the support platen 210 by rotating it. On the other hand, the machining operation of the sub-machining is the machining operation in the oscillating motion. The machining operation of the sub-machining is to perform averaging together with the machining operation of the main machining, so that the PV value (Peak to Valley: maximum error) and the RMS value (Root Mean Square: root mean square (square root) is an operation that can be further enhanced. The machining operation of the main machining is a machining operation that achieves the minimum necessary machining in the catalyst-based etching only by the machining operation of the main machining without the machining operation of the sub-machining.

In the light irradiation catalyst-based etching apparatus 200 configured as described above, the catalyst pad 240 is a disk-shaped rotary surface plate, and the polishing head 260 holding the workpiece W having a smaller area than the surface plate and the catalyst are used. The pads 240 are rotated at a predetermined speed on mutually parallel and eccentric rotating shafts. Further, the polishing head 260 can adjust the contact pressure of the workpiece W against the catalyst layer 230 of the catalyst pad 240 by adjusting the load. Moreover, if at least one of the catalyst pad 240, the surface plate, the tub, the fluid section, and the polishing head 260 is provided with a temperature control function, the processing temperature can be maintained at a predetermined temperature, which is desirable. For example, when the workpiece W is SiC, processing at a temperature of 70 degrees in catalyst-based etching using water (also referred to as water CARE) makes the processing rate lower than when processing using water at room temperature. improves. If the area of the surface of the catalyst layer 230 is narrower than the surface of the workpiece W, the position of the small catalyst pad 240 with respect to the surface of the workpiece W and the residence time of the catalyst pad 240 can be controlled to control the surface area of the workpiece W. The amount of local machining can be controlled, that is, local machining can be performed by numerical control.

In the light irradiation catalyst standard etching apparatus 200 of the second apparatus example, water molecules are dissociated to cut the back bonds of the oxygen element and other elements that constitute the solid oxide film and adsorb, and the decomposition products by hydrolysis are released into the water. It is eluted and the surface of the workpiece W is processed. Also, a water circulation system 290 is provided to purify the water 201 in the tub container 220 and keep the water level constant. The water circulation system 290 is composed of a supply pipe 291, a drain pipe 292, a treatment liquid refiner (not shown), a buffer tank, a pump, a waste liquid section, and the like.

[Cleaning device]
Next, a cleaning device capable of performing the cleaning performed by the first cleaning means 13 and the second cleaning means 17 in FIG. 1 will be described.
The cleaning device can be realized by changing the catalyst in the basic configuration of the photo-irradiation catalyst-based etching device 100 or 200 . For example, instead of etching using Pt as a catalyst in the light irradiation catalyst-based etching apparatuses 100 and 200, etching is performed using Ni as a catalyst, thereby realizing a cleaning apparatus that removes Pt adhering to the workpiece. In this case, Pt is removed from the surface of the workpiece. Ni adheres to the surface of the workpiece from which the Pt has been removed.

The device for performing the processing performed by the latent flaw removing means 12 and the device for performing the processing performed by the first cleaning device 13 may be configured by the same device, or may be configured by different devices. good too. Similarly, the device for performing the processing performed by the surface finishing means 16 and the device for performing the processing performed by the second cleaning device 17 may be configured by the same device or may be configured by different devices. You may In this case, in the light irradiation catalyst-based etching apparatus 100, 200, after executing the catalyst-based etching process, the cleaning liquid is introduced into the tub container 150, 220 to change the catalyst. good.

(Modification of Light Irradiation Catalyst-Based Etching Apparatus and Workpiece Processing System)
In addition to the configuration of the light irradiation catalyst standard etching apparatuses 100 and 200, the light irradiation catalyst standard etching apparatus described above may have the following configuration. The workpiece processing system 10 may also have the following configuration. It should be noted that the content described below includes some content that overlaps with the content described above.

For example, the light irradiation catalyst standard etching apparatus uses a cassette and case that are resistant to chemicals when cleaning adhering contaminants. When transporting the case with an air vent hole on the ceiling of the case), a cassette mounting part used in the catalyst-based etching process, a suction type handling part to prevent the workpiece from drying before cleaning, and a UV lamp Surveillance camera to prevent the ultraviolet light from entering the eyes directly, monitor to prevent the ultraviolet light from the UV lamp from entering the eyes directly, workpiece holding part, catalyst pad holding part, head part A plating or electropolishing auxiliary electrode, a polishing head with a plating or electropolishing auxiliary electrode, a polishing head capable of energizing a UV lamp, or the like may be provided.

Further, the light irradiation catalyst-based etching apparatus includes a workpiece holding section configured to hold a workpiece (substrate or the like), a catalyst pad holding section configured to hold a catalyst pad, and a workpiece holding section configured to hold a workpiece (such as a substrate). a drive unit configured to relatively move the workpiece holder and the catalyst pad holder while the region to be treated of the object and the catalyst are in contact with each other. The catalyst pad holding section may have an elastic member for holding the catalyst pad. The catalyst pad holding part has a plurality of grooves and holes configured to allow the treatment liquid to move between the catalyst pad holding part and the workpiece when the catalyst pad and the workpiece are in contact with each other. may be

Further, the photo-irradiation catalyst-based etching apparatus may include a processing liquid temperature adjustment section that adjusts the temperature of the processing liquid to a predetermined temperature within a range of 10 degrees or more and 90 degrees or less. By adjusting the temperature of the treatment liquid, it is possible to improve the processing rate for the workpieces such as oxides and SiC, and to remove catalyst poisons such as Si components. The catalyst-based etching apparatus may also include a processing liquid supply unit having a supply port for supplying the processing liquid onto the processed region of the workpiece. The treatment liquid supply section may be configured such that the supply port moves together with the catalyst holding section.

The light-irradiated catalyst-based etching apparatus may also include an electrolytic regeneration section configured to remove etching products on the surface of the catalyst using an electrolytic action. The electrolytic regeneration unit has an electrode configured to be electrically connectable to the catalyst, and by applying a voltage between the catalyst and the electrode, the etching product adhering to the surface of the catalyst is electrolyzed. It may be configured to remove.

The light irradiation catalyst based etching apparatus may also include a plating regeneration unit configured to regenerate the catalyst. The plating regeneration unit has an electrode configured to be electrically connectable to the catalyst. With the catalyst immersed in a nickel salt solution such as nickel sulfate (hydrate), The surface of the catalyst may be re-plated by applying a voltage to. Alternatively, the surface of the catalyst may be used while being chemically dissolved. The catalyst may be placed in a positive potential state with respect to the working fluid to dissolve the transition metal film on the working surface.

Further, the light irradiation catalyst-based etching apparatus includes a monitoring unit for monitoring the etching processing state of the region to be processed of the workpiece, and at least the processing conditions of the workpiece being processed based on the etching processing state obtained by the monitoring unit. A control unit configured to control one parameter and a potential adjustment unit having a reference electrode, wherein the catalyst and the reference electrode are electrochemically connected via a treatment liquid to adjust the potential of the surface of the catalyst. A potential adjustment unit configured to control may be provided. In addition, the monitoring unit includes a torque current monitoring unit that monitors the etching processing state based on the torque current of the driving unit when the catalyst holding unit and the workpiece holding unit move relative to each other; A region is irradiated with light, the reflected light reflected on the surface of the region to be processed of the workpiece or reflected after passing through the workpiece is received, and the state of the etching process is determined based on the received light. An optical monitoring unit may be provided for monitoring.

In addition, the light irradiation catalyst-based etching apparatus includes a catalyst cleaning nozzle configured to supply water and/or a chemical solution for cleaning the surface of the catalyst to the surface of the catalyst, and a processing liquid passing through the catalyst holding portion. A processing liquid supply unit having a supply port for supplying onto the processing area of the workpiece may be provided.

The workpiece processing system may also include a workpiece cleaning section configured to clean the workpiece, and a workpiece transport section configured to transport the workpiece.
In addition, the workpiece processing system includes a workpiece measuring unit configured to measure the surface state, thickness or weight of a region to be processed of the workpiece after being processed by the workpiece processing apparatus; a reprocessing control unit configured to reprocess the workpiece after being processed by the workpiece processing device when the measurement result of the workpiece measuring unit does not satisfy a predetermined criterion; good too. Further, the workpiece conveying unit may be configured so as to be able to separately convey a wet workpiece and a dry workpiece.

Further, the workpiece processing system may include a film forming apparatus configured to perform a film forming process on the workpiece. The deposition system may have at least one of a chemical vapor deposition (CVD) system, a sputtering system, a plating system, and a coater system.

According to the light irradiation catalyst standard etching apparatus of the present embodiment as described above, the following effects can be obtained.

(1) Light irradiation catalyst-based etching apparatuses 100 and 200 are used for catalyst-based etching, and include UV lamps 125 and 225 that emit ultraviolet light and a plurality of slits through which the ultraviolet light emitted from the UV lamps 125 and 225 passes. Support surface plates 140 and 210 having grooves 141 or a plurality of through holes 211a and formed of a material that does not transmit ultraviolet light; Tub containers 150, 220 provided with bottom plates 151, 221 having slit grooves 151a or a plurality of through holes 221a; It comprises permeable members 157 and 212 and catalyst pads 155 and 240 arranged above the bottom plates 151 and 221 of the tubs 150 and 220 . As a result, the strength of the supporting surface plates 140 and 210 can be ensured while the catalyst-based etching is accelerated by the ultraviolet light emitted from the UV lamps 125 and 225 .

(2) The support surface plates 140 and 210 are made of a metal material, a material that is resistant to ultraviolet rays and has strength, or a material that has been subjected to a surface treatment that is resistant to ultraviolet rays. Thereby, the strength of the support surface plates 140 and 210 can be ensured. Therefore, even if the total load of the members arranged on the upper side of the support surface plates 140 and 210 increases, damage to the support surface plates 140 and 210 can be suppressed. Due to an increase in contact area during catalyst-based etching processing due to an increase in the diameter of the workpiece W, even if the load applied during processing increases for the purpose of maintaining and increasing the load per unit area, the support surface plate 140 , 210 can be suppressed. As a result, although the load increases due to the influence of the increase in the size of the surface plate due to the increase in the size of the workpiece, damage to the support surface plates 140 and 210 due to the load from the moment direction can be suppressed.

(3) Further, the tub containers 150 and 220 are attachable and detachable with respect to the support surface plates 140 and 210 . Therefore, handling of the tub containers 150 and 220 is easy. Further, when there is a space for mounting the tub containers 150 and 220 on the polishing apparatus for CMP, the catalyst pads 155 and 240 can be used in catalyst-based etching using water by mounting the tub vessels 150 and 220 on the polishing apparatus. it becomes possible to If the support surface plates 140 and 210 do not have holes for irradiating light from below, the catalyst pads 155 and 240 may not have through grooves.

(4) In addition, the ultraviolet transmitting members 157 and 212 are attached to the bottom plates 151 and 221 in a state where the water stop treatment is applied to the water stop treatment portions 157a and 212a, and the plurality of slits in the support surface plates 140 and 210 are installed. The groove 141 or the plurality of through-holes 211a are provided in portions of the ultraviolet transmitting members 157 and 212 that do not correspond to the waterproof treatment portions 157a and 212a. Therefore, it is possible to suppress the deterioration due to the ultraviolet light emitted from the UV lamps 125 and 225 in the waterproof treatment portions 157a and 212a.

The light irradiation catalyst reference etching apparatus 100 according to the present invention is not limited to the above-described embodiment, and can be modified as appropriate.
For example, in the above-described embodiment, the cleaning method of the workpiece is to remove harmful substances adhering to the surface of the workpiece after the catalyst-based etching process, but the method is not limited to this. Hazardous substances adhering to the surface may not be adhered by the catalyst-based etching process. In other words, the method for cleaning the workpiece can also be applied to removing harmful substances adhering to the surface of the workpiece before the catalyst-based etching process has been performed. For example, by using a method for cleaning the work piece, the amount of components adhering to the surface of the work piece observable by measurement using a total reflection X-ray fluorescence spectrometer (manufactured by Rigaku Corporation, for example) can be reduced. is possible. Cleaning can be performed while the surface roughness Ra or the like is maintained or improved.

Further, in the above-described embodiment, in the first device example of the photoirradiation catalyst standard etching device 100 shown in FIG. It is not limited to this. For example, the pair of support surface plates 140 may be configured to reciprocate in opposite phases within an oval range in plan view. As a result, the range of movement can be expanded as compared with the case where the pair of support surface plates 140 are reciprocally moved on the same straight line in opposite phases. can.

In the above-described embodiment, the tub containers 150 and 220 (tub portions) are provided, and the bottom plates 151 and 221 and the peripheral wall portions 152 and 222 rising from the peripheral edges of the bottom plates 151 and 221 are provided. , but is not limited to this. Peripheral walls may be provided on the support surface plates 140 and 210 (surface plates) without providing the tub containers 150 and 220 (tub portions). In this case, ultraviolet light transmitting members 157 and 212 (light transmitting members) may be arranged on the support surface plates 140 and 210 (surface plates).

Moreover, the shape of the trough portion may be a shape of a trough that can store at least one of liquid and gas. The shape of the tub portion may be a shape with an open top like the tub containers 150 and 220 of the above embodiment, or a closed shape. If the top is open, it may be used horizontally or upside down depending on the liquid or gas used for processing.

Further, the first device example and the second device example of the above embodiment may be changed to other embodiments below.
For example, in the first apparatus example of the light irradiation catalyst standard etching apparatus 100 of the embodiment shown in FIGS. Alternatively, an ultraviolet irradiation opening for ultraviolet rays corresponding to the size of the entire or most of the surface to be processed of the workpiece W to be irradiated with ultraviolet rays may be provided. A UV lamp 125 is provided below the opening for ultraviolet irradiation, and the UV lamp 125 irradiates ultraviolet rays. After irradiating ultraviolet rays from the UV lamp 125 , polishing is performed by the polishing head 163 .

2, the base 110 is moved along parallel rails (not shown) in the front-rear direction of the plane of FIG. At the portion where there is no edge, the main shaft 160 is lowered to bring the workpiece W supported or held by the polishing head 163 into contact with or close to the catalyst pad 155 as in the above embodiment. After that, the supporting surface plate 140 is vibrated left and right in FIG. 2 by the drive motor 182, and in this state, the base 110 is swung within a certain range. Rotation of the main shaft 160 may be arbitrarily performed in this state. After the processing, the workpiece W may be returned to the ultraviolet irradiation opening and irradiated with ultraviolet rays, and then the operation of polishing may be repeated. By rotating the main shaft 160 (polishing head 163) while the workpiece W faces the UV lamp 125, the polishing surface of the workpiece W can be more uniformly irradiated with ultraviolet rays.
The advantage of this method is that the entire surface of the workpiece W to be processed can be irradiated with ultraviolet light once. Control for processing the surface of the workpiece W is possible.

Further, for example, in the case of the second apparatus example of the photoirradiation catalyst standard etching apparatus 200 of the above-described embodiment shown in FIGS. In order to perform an operation similar to that of the above embodiment, the support surface plate 210 has the entire surface of the workpiece W to be irradiated with ultraviolet rays instead of the bottom plate side through opening 221a of the second device example. Alternatively, it may have an ultraviolet irradiation opening corresponding to most of the sizes. A light irradiation unit 225 is provided under the ultraviolet irradiation opening, and the light irradiation unit 225 irradiates ultraviolet rays on the outer diameter portion in a state in which the polishing head 260 is raised. After the light irradiation unit 225 irradiates the ultraviolet rays, the light irradiation unit 225 is moved to the inner diameter portion of the support surface plate 210 .

Then, the workpiece W supported or held by the polishing head 260 is lowered to contact or approach the catalyst pad 240 . Subsequently, the catalyst-based etching process is performed, and after the process, the light irradiation part 225 is moved to the outer diameter part again with the polishing head 260 raised, and the workpiece W is irradiated with ultraviolet rays. Repeat this action. By providing the light irradiation part 225 at the inner diameter part or the central part, the processing operation of the catalyst-based etching process may be repeated at the outer diameter part after light irradiation with the polishing head 260 raised. When the light irradiation part 225 exists in the inner diameter part or the central part, the structure is such that the lower rotating shaft 271 of the hollow driving mechanism 270 exists around it. The outer diameter portion may be held by bearings.
The advantage of this method is that the entire surface of the workpiece W to be processed can be irradiated with ultraviolet light once. Control for processing the surface of the workpiece W is possible.

100, 200 Light irradiation catalyst standard etching device 140, 210 Support surface plate (surface plate)
150, 220 Tub container (tub portion)
151, 221 bottom plate 155, 240 catalyst pad (pad portion)
157, 212 UV transmitting member (light transmitting member)
157a, 212a Water stop treatment section 125, 225 UV lamp (light irradiation section)
141 slit groove (surface plate side through opening)
151a slit groove (bottom plate side through opening)
211a through hole (surface plate side through opening)
221a through hole (bottom plate side through opening)
W work piece

Claims (6)

a light irradiation unit that is used for light irradiation catalyst-based etching and that emits light having a wavelength effective for processing a workpiece;
arranged above the light irradiation unit, a surface plate having one or more surface plate-side through openings through which light emitted from the light irradiation unit passes, and formed of a material that is not suitable for transmitting the light emitted by the light irradiation unit;
arranged on the upper side of the surface platebeforeA bottom plate having one or more bottom plate side through openings through which the light emitted by the light irradiation unit passesand a peripheral wall portion provided on the peripheral edge of the bottom plate;a barrel section comprising a
a light transmitting member arranged in the tub portion so as to block the one or more bottom plate side through openings;
and a pad portion arranged on the upper side of the bottom plate in the tub portion. 2. The light irradiation catalyst standard etching apparatus according to claim 1, wherein the light transmitting member is attached to the lower surface of the bottom plate. 3. The photo-irradiation catalyst-based etching apparatus according to claim 1, wherein the surface plate is made of a metal material, a material resistant to ultraviolet rays, or a material subjected to a surface treatment resistant to ultraviolet rays. 4. The light irradiation catalyst standard etching apparatus according to any one of claims 1 to 3 , wherein the tub portion is detachable from the surface plate. The light-transmitting member, which transmits light having a wavelength effective for processing a workpiece, is attached to the bottom plate in a water-stopping treatment portion in a state in which water-stopping treatment has been performed,
5. The light irradiation catalyst based etching apparatus according to any one of claims 1 to 4 , wherein the one or more surface plate side through openings are provided in a portion of the light transmitting member that does not correspond to the water stop treatment portion. 6. The light according to any one of claims 1 to 5 , wherein at least one of said surface plate, said tub and said pad has resistance to at least one of water component and oxygen component at 90 °C or less. Irradiation catalyst standard etching equipment.

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