JP2003273020A - 基板処理方法 - Google Patents

基板処理方法

Info

Publication number
JP2003273020A
JP2003273020A JP2002070065A JP2002070065A JP2003273020A JP 2003273020 A JP2003273020 A JP 2003273020A JP 2002070065 A JP2002070065 A JP 2002070065A JP 2002070065 A JP2002070065 A JP 2002070065A JP 2003273020 A JP2003273020 A JP 2003273020A
Authority
JP
Japan
Prior art keywords
outer tube
gas
ceiling wall
film forming
nitrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002070065A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003273020A5 (enExample
Inventor
Wakako Shiratori
和賀子 白鳥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2002070065A priority Critical patent/JP2003273020A/ja
Priority to US10/383,636 priority patent/US20030175426A1/en
Priority to KR10-2003-0015682A priority patent/KR20030074418A/ko
Publication of JP2003273020A publication Critical patent/JP2003273020A/ja
Publication of JP2003273020A5 publication Critical patent/JP2003273020A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2002070065A 2002-03-14 2002-03-14 基板処理方法 Pending JP2003273020A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002070065A JP2003273020A (ja) 2002-03-14 2002-03-14 基板処理方法
US10/383,636 US20030175426A1 (en) 2002-03-14 2003-03-10 Heat treatment apparatus and method for processing substrates
KR10-2003-0015682A KR20030074418A (ko) 2002-03-14 2003-03-13 기판 처리 방법 및 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002070065A JP2003273020A (ja) 2002-03-14 2002-03-14 基板処理方法

Publications (2)

Publication Number Publication Date
JP2003273020A true JP2003273020A (ja) 2003-09-26
JP2003273020A5 JP2003273020A5 (enExample) 2005-09-22

Family

ID=28035038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002070065A Pending JP2003273020A (ja) 2002-03-14 2002-03-14 基板処理方法

Country Status (3)

Country Link
US (1) US20030175426A1 (enExample)
JP (1) JP2003273020A (enExample)
KR (1) KR20030074418A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070243317A1 (en) * 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US8200700B2 (en) 2005-02-01 2012-06-12 Newsilike Media Group, Inc Systems and methods for use of structured and unstructured distributed data
US7381926B2 (en) * 2005-09-09 2008-06-03 Applied Materials, Inc. Removable heater
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP5222652B2 (ja) 2008-07-30 2013-06-26 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5383332B2 (ja) * 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
TW202229795A (zh) * 2020-11-23 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 具注入器之基板處理設備
CN112663027B (zh) * 2020-12-02 2023-04-25 鑫天虹(厦门)科技有限公司 可减少前驱物沉积的原子层沉积设备与制程方法
FI129948B (en) * 2021-05-10 2022-11-15 Picosun Oy SUBSTRATE PROCESSING APPARATUS AND METHOD
JP7317912B2 (ja) * 2021-09-21 2023-07-31 株式会社Kokusai Electric 炉口部構造、基板処理装置、および半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2825172B2 (ja) * 1992-07-10 1998-11-18 東京エレクトロン株式会社 減圧処理装置および減圧処理方法
US5637153A (en) * 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
US5507639A (en) * 1993-06-30 1996-04-16 Tokyo Electron Kabushiki Kaisha Heat treatment apparatus and method thereof
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
US6383300B1 (en) * 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same

Also Published As

Publication number Publication date
US20030175426A1 (en) 2003-09-18
KR20030074418A (ko) 2003-09-19

Similar Documents

Publication Publication Date Title
KR100272146B1 (ko) 반도체장치의 제조방법과 반도체제조장치 및 그 세정방법
CN100350574C (zh) 在被处理基板上形成硅氮化膜的cvd方法
JP2002280378A (ja) バッチ式リモートプラズマ処理装置
JP2009038155A (ja) プラズマ処理装置
JP2011222960A (ja) 基板処理装置及び半導体装置の製造方法
WO2004102650A1 (ja) プラズマ処理装置
US7700054B2 (en) Substrate processing apparatus having gas side flow via gas inlet
CN100456435C (zh) 衬底处理装置以及半导体设备的制造方法
JP4114972B2 (ja) 基板処理装置
TW201827640A (zh) 時間性原子層沉積處理腔室
JP2006080098A (ja) 基板処理装置および半導体装置の製造方法
JPH11345778A (ja) 成膜装置のクリーニング方法及びそのクリーニング機構
JP2003273020A (ja) 基板処理方法
US8025739B2 (en) Method of manufacturing semiconductor device
WO2007018139A1 (ja) 半導体装置の製造方法および基板処理装置
JP2000311862A (ja) 基板処理装置
JP2013065872A (ja) 半導体装置の製造方法および基板処理装置
JP4435111B2 (ja) Ａｌｄ装置および半導体装置の製造方法
JP2005209668A (ja) 基板処理装置
JP2003158081A (ja) 基板処理装置
JP2004273605A (ja) 基板処理装置
JP3907546B2 (ja) 縦型熱処理装置および半導体集積回路装置の製造方法
CN112740373A (zh) 基板处理装置
JP2004289166A (ja) バッチ式リモートプラズマ処理装置
JP3894865B2 (ja) 半導体製造装置、被覆管および半導体集積回路装置の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040929

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050415

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050816

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050823

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20051220