JP2003258316A - Light emitting diode having enhanced light emission luminance and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting diode having an enhanced light emission luminance and to provide a method for manufacturing the same. <P>SOLUTION: The method for manufacturing the light emitting diode having an enhanced light emission luminance comprises the steps of removing a partial volume of a high carrier-doped layer having an evil for absorbing a ray luminance formed naturally at a bottom side when an LED epitaxial layer is grown, forming a space section, filling the space section with a transparent substance layer, projecting a ray route, providing a conductive contact layer for performing a conduction and a current route standard on the un-removed high carrier-doped layer, evenly distributing a working current in an LED epitaxial layer to perform an object to emit a light, and thereby remarkably enhancing the light emission luminance in the LED element. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode having a high emission brightness and a method of manufacturing the same, and a partial volume of a high carrier-doped layer on the bottom side of an LED epitaxial layer is removed to form a space area. The present invention relates to a light emitting diode having a high light emission brightness, which fills a space area with a light transmissive material layer so that a light beam path can be projected and the light emission brightness in an LED element is significantly increased, and a method for manufacturing the same.

[0002]

2. Description of the Related Art A light emitting diode (LED) has a long life, a small volume, a low calorific value, a low power consumption, a fast reaction speed, and a characteristic and advantage of monochromatic light emission. It has been used extensively in computer peripherals, clock displays, meter boards, or in communications, information, and consumer electronics. Particularly in recent years, due to the development of high-brightness light emitting diode technology, LEDs are widely used indoors and outdoors, and the range of application is remarkable. But L
When the ED is applied outdoors, its brightness characteristics are required and are the basis.

To increase the LED emission brightness, the industry offers many new and valuable product innovations, for example, US Pat. No. 5,153,889, as shown in FIG. Upper clad layer 17, light emitting active layer 1
6. A current spreading layer 18 is provided on the LED epitaxial layer having the lower clad layer 15, and a current blocking layer 100 is provided in the current spreading layer 18 to insulate and move the working current toward both sides. A reflective layer 13 that reflects a projection light source is provided between the lower cladding layer 15 of the LED epitaxial layer and the substrate 11, and the lower electrode 102 is provided on the bottom side of the substrate 11.
And the counter electrode 101 is provided above the current diffusion layer 18.

In the above-mentioned conventional structure, the current spreading layer 18, the current blocking layer 100 and the reflection layer 13 effectively achieve the function of increasing the emission brightness. However, it has the following drawbacks. 1. When growing the LED epitaxial layer on the substrate,
A high carrier-doped layer 155 is spontaneously formed in a portion close to the substrate surface on the bottom side, and this high-carrier-doped layer 155 absorbs a large amount of projected photons, and thus has an emission brightness function of the LED epitaxial layer. To the contrary, it caused a great deal of damage, and the above structure could not effectively overcome this. 2. The LED epitaxial layer is limited by its material selection and must be grown on the substrate surface with a matching lattice constant. However, if the material properties of the substrate are incompatible, the substrate cannot be used. For example, a GaAs substrate can absorb light rays and reduce the emission brightness of the device, and the GaP substrate itself exhibits an orange color, which causes a problem of emission chromaticity. Were present. 3. The current blocking layer 100 is very complicated in manufacturing, and it has to be aligned with the bottom end of the counter electrode 101, has no elasticity by design, and is too cumbersome in process.

To this end, the industry has therefore provided the concept of using permanent substrates in place of temporary substrates, in spite of the above mentioned drawbacks. For example, US Pat. No. 6,258,69
No. 9 or US patent application Ser. No. 09 / 384,053 shows a different solution.

FIG. 2 shows the main structure described in US Pat. No. 6,258,699. That is, a planar LED epitaxial layer (light emitting region) 26 is formed on a temporary substrate made of GaAs or InP, and then the temporary substrate is peeled off. In addition, transparent glass or quartz is selected to form the permanent substrate 21.
A metal adhesive 24 is formed on the upper layer and is bonded to the bottom layer of the planar LED epitaxial layer 26. In addition, the permanent substrate 21
A metal reflective layer 23 is provided on the bottom layer of the
Two electrodes 201, 2 on the plane of the epitaxial layer 26
When 02 is energized to emit light, the pn junction projects downward, the light source transmits through transparent glass or quartz, is reflected by the metal reflection layer 23, and thereby achieves the function of increasing the emission brightness.

However, the above-mentioned structure of the light emitting diode still has the following drawbacks. 1. The high carrier-doped layer 265 on the bottom side of the LED epitaxial layer could not be effectively resolved, which had an enormous influence on the emission brightness of the entire LED element. 2. It is necessary for the reflection light source to pass through a glass or quartz permanent substrate, and the traveling light of the reflection light source is too long, which is disadvantageous in improving the emission brightness. 3. Since the reflective layer is provided on the bottom side of the substrate, the permanent substrate must be made of a transparent material, which naturally limits the use of the material and the design range of the product. 4. Since the high temperature generated in the work of the LED epitaxial layer cannot be effectively eliminated, the reliability of use of the device is impaired, and further, the useful life of the device is not a little threatened.

Therefore, there is a demand for a light emitting diode which can effectively solve the above-mentioned drawbacks of the prior art, can increase the light emission luminance, and can maintain the operational reliability and service life of the device.

[0009]

SUMMARY OF THE INVENTION The main object of the present invention is to provide a light emitting diode with enhanced emission brightness, which eliminates a partial volume of the high carrier doped layer on the bottom side of the LED epitaxial layer. And the high carrier-doped layer position removed by the translucent material layer is filled, effectively solving many drawbacks caused by the high carrier-doped layer, and effectively increasing the device emission brightness. To do.

A further object of the present invention is to provide a kind of light emitting diode with high emission brightness, which comprises a permanent substrate slendered instead of a temporary substrate used for LED epitaxial layer growth. According to the actual requirements, by selecting an appropriate material for conduction, heat conduction or color light conversion to form a permanent substrate for an LED element, not only expanding the range of application, but also effectively improving the work reliability and service life of the element. It shall be a diode.

Yet another object of the present invention is to provide a kind of light emitting diode with enhanced emission brightness, which utilizes the established position of the metal contact point to effectively improve the flow path and density of working current. It shall be a light emitting diode that defines and solves the problem of effectively blocking the current and also significantly improves the light emission brightness function.

Yet another object of the present invention is to provide a method of manufacturing a light emitting diode with enhanced emission brightness, which utilizes a simple process change and effectively utilizes high carrier doping on the bottom side of the LED epitaxial layer. It is a method that solves many problems caused by layers, has a simple process, is advantageous for mass production, and can effectively increase product yield and reduce manufacturing cost expenditure.

Yet another object of the present invention is to provide a method of manufacturing a light emitting diode having enhanced light emission brightness, which is applied not only to an upright type light emitting diode but also to a planar type light emitting diode. In addition, there are many applicable types, it is advantageous for product design, and it is a convenient method for selecting an appropriate permanent substrate.

[0014]

According to a first aspect of the present invention, there is provided a method of manufacturing a light emitting diode having increased light emission brightness, wherein an LED epitaxial layer having at least one light emitting active layer is grown on a surface of a temporary substrate, Naturally forming a high carrier-doped layer on the bottom side of the light-emitting diode, peeling off the temporary substrate, and forming at least one conductive contact layer on a part of the bottom surface of the high carrier-doped layer. A step of removing a high carrier-doped layer whose surface is not connected to the conductive contact layer and forming a space section between the two high-carrier-doped layers, and a step of forming a transparent material layer in the space section. The step of connecting one permanent substrate to the bottom side position of the translucent material layer. Meta is a method for manufacturing a light-emitting diode. According to the invention of claim 2, in the manufacturing method,
The emission brightness of claim 1, further comprising the step of forming a reflective layer on the bottom side of the translucent material layer and connecting the permanent substrate to the bottom side of the reflective layer. The manufacturing method of the light emitting diode is used. According to a third aspect of the present invention, in the manufacturing method, the bonding layer is formed on the upper side of the permanent substrate,
The method of manufacturing a light emitting diode with increased emission brightness according to claim 1, further comprising the step of bonding the bonding layer to the bottom side of the light transmissive material layer. The invention of claim 4 further comprises the step of forming the lower electrode on the bottom side of the permanent substrate and forming the counter electrode on the upper side of the LED epitaxial layer in the manufacturing method. The method for manufacturing a light emitting diode having the above-described emission brightness is enhanced. According to a fifth aspect of the present invention, in the manufacturing method, the counter electrode is formed on the upper side of the LED epitaxial layer before the temporary substrate is peeled off, and the lower electrode is formed on the bottom of the permanent substrate before the permanent substrate is connected to the transparent material layer. The method for manufacturing a light emitting diode with increased emission brightness according to claim 4, characterized in that the light emitting diode is formed on the side. According to a sixth aspect of the present invention, in the manufacturing method, the current spreading layer is LE.
The method of manufacturing a light emitting diode with increased emission brightness according to claim 1, further comprising a step of forming the light emitting diode on the upper side of the D epitaxial layer. The invention of claim 7 is characterized in that, in the manufacturing method, the translucent material layer is formed of any one of ITO, zinc oxide, indium oxide, tin oxide and combinations thereof having conductive properties.
A method of manufacturing a light emitting diode having an increased luminance according to claim 1 is provided. The invention according to claim 8 is characterized in that, in the manufacturing method, the translucent material layer is formed of any one of a polymer, quartz, glass and a combination thereof having no conductive property. This is a method of manufacturing a light emitting diode with increased brightness. According to a ninth aspect of the present invention, there is provided the method for producing a light emitting diode with increased light emission luminance according to the first aspect, wherein the permanent substrate is formed of a material having good heat conduction characteristics. According to a tenth aspect of the invention, in the manufacturing method,
[10] The manufacturing of a light emitting diode with high emission brightness according to claim 9, wherein the permanent substrate is formed of any one of silicon, boron nitride, aluminum nitride, aluminum oxide, magnesium oxide, titanium dioxide and combinations thereof. I have a method. According to the invention of claim 11, in the manufacturing method, a planar LE is formed by forming an LED epitaxial layer.
The method for manufacturing a light emitting diode with increased emission luminance according to claim 1, wherein the element is not a D element, and the first electrode and the second electrode are formed on the upper side thereof. According to a twelfth aspect of the present invention, in a light emitting diode with increased emission brightness, an LED epitaxial layer having at least one light emitting active layer and having a plurality of space sections on the bottom side, and a space section of the LED epitaxial layer are formed. At least one conductive contact layer provided on the bottom surface, which is not formed, a translucent material layer provided in the space, a bonding layer provided between the transmissive material layer and the permanent substrate, The lower electrode provided on the bottom side of the substrate and LE
A counter electrode provided at a position above the D epitaxial layer, and a light emitting diode with enhanced light emission brightness. According to a thirteenth aspect of the present invention, there is provided the light emitting diode according to the twelfth aspect, wherein a reflective layer is provided between the translucent material layer and the bonding layer in the light emitting diode. Claim 1
According to a fourth aspect of the invention, there is provided the light emitting diode with increased light emission luminance according to claim 13, wherein the reflective layer is formed of the same material as the bonding layer in the light emitting diode. According to a fifteenth aspect of the present invention, in the light emitting diode, the current spreading layer is provided between the LED epitaxial layer and the counter electrode. Claim 1
According to a sixth aspect of the invention, there is provided the light emitting diode with increased light emission luminance according to claim 12, wherein in the light emitting diode, the bonding layer is also formed as a lower electrode. The invention according to claim 17 is characterized in that, in the light emitting diode, the light transmissive material layer is formed of any one of ITO, zinc oxide, indium oxide, tin oxide and a combination thereof having conductive properties. The light emitting diode described in item 12 has an increased light emission luminance. Claim 18
In the above light emitting diode, the invention of claim 2 is characterized in that the light transmissive material layer is formed of any one of a polymer, quartz, glass and a combination thereof having no conductive property.
A light emitting diode having high emission brightness according to claim 12. According to a nineteenth aspect of the present invention, in the light emitting diode, the permanent substrate is formed of a material having a good heat conduction property, and the light emitting diode with increased light emission luminance according to the twelfth aspect is provided. According to a twentieth aspect of the invention, in the light emitting diode, the permanent substrate is silicon.
20. The light emitting diode with increased emission brightness according to claim 19, which is formed of any one of boron nitride, aluminum nitride, aluminum oxide, magnesium oxide, titanium dioxide, and a combination thereof. Claim 2
According to a first aspect of the present invention, in the light emitting diode, the LED epitaxial layer is either an upright LED element or a planar LED element.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT FIGS. 3 to 9 are structural sectional views of respective manufacturing steps of a preferred embodiment of the present invention. As shown in each figure, the manufacturing method of the present invention includes the following.

A lower clad layer 35, a light emitting active layer 36, and an upper limiting layer 37 are internally formed by using a technique such as sputtering or vapor deposition.
Is formed on the temporary substrate 31 having a matching lattice constant. Of course, LED
The epitaxial layer grows on the temporary substrate 35,
A high carrier-doped layer 355 that interferes with the emission brightness projection function is present at the bottom of the LED epitaxial layer, and a current spreading layer 33 is further provided above the upper cladding layer 37, as shown in FIG. is there.

The counter electrode 39 is provided on a part of the surface on the upper side of the current diffusion layer 33, and the temporary substrate 31 is peeled off. This is as shown in FIG.

A conductive contact layer 41 made of a plurality of metals, alloys or other materials having conductive characteristics is provided at the bottom side of the high carrier doped layer 355. Each conductive contact layer 41 is used as a working current conducting path of the LED device, so that it has a small volume, but a large number of the conductive contact layers 41 are installed on the bottom side of the high carrier-doped layer 355 so that the work can be performed. The problem of current flow path definition and achievement and current interruption is solved, as shown in FIG.

Using etching and various other conventional techniques, a part of the high carrier doped layer 355 exposed outside without contacting the conductive contact layer 41 is subjected to a removing step to remove this volume. To form the space section 42. This is the bird shown in FIG.

The translucent material layer 43 is formed in the space section 42 formed in a part of the high carrier doped layer 355 which is partially removed.
And the translucent material layer 43 is an IT having a conductive property.
A high carrier-doped layer 35 formed of O, zinc oxide, indium oxide, tin oxide, or a polymer having no conductive property, quartz, or glass, which absorbs a large number of photons.
It is used instead of 5 to greatly increase the emission brightness,
It has a function of supporting the LED epitaxial layer. This is as shown in FIG.

A permanent substrate 47 having a reflective layer 45 having light source reflection characteristics formed on the bottom end of the translucent material layer 43, a bonding layer 46 formed on the upper side, and a lower electrode 49 provided on the bottom side, and the above device. Face each other. This is as shown in FIG.

The bonding layer of the permanent substrate 47 and the reflection layer 45 at the bottom end of the LED epitaxial layer are bonded to each other to complete the manufacture of the LED device. This is as shown in FIG.

The present invention is carried out by using the permanent substrate 47 in place of the temporary substrate 31, whereby most of the high carrier doped layer 355 is removed and the emission brightness is significantly increased. The material used can be selected according to the requirements of, for example, high conductivity, high heat conduction,
Alternatively, it is a material having a color changing function, and its use or design range is wide.

In this embodiment, the permanent substrate 4 of the present invention is used.
7 is a silicon-containing material, selected from boron nitride, aluminum nitride, aluminum oxide, magnesium oxide, or titanium dioxide material, and is an effective and timely LED.
High heat generated in the work of the device can be discharged to the outside of the device in a timely manner, the reliability of the work of the device can be secured, and the useful life of the device can be maintained.

Of course, the reflective layer 45 and the bonding layer 46 can be made of the same material, or they can be bonded together to form a bonded reflective layer as a unit. Similarly, the purpose of bonding two parts can be achieved. . In addition, in order to achieve the purpose of heat dissipation of the device, the reflective layer 45 and the bonding layer 46 can be formed by selecting a material having good heat conduction characteristics.

Further, the lower electrode 48 and the counter electrode 39 do not necessarily have to be completed at the initial stage of bonding, and in different embodiments, after the bonding of the LED epitaxial layer and the permanent substrate 47 is completed, the bottom of the permanent substrate 47 is completed. The lower electrode 49 and the counter electrode 39 corresponding to each other may be formed on the end and the upper end of the current diffusion layer 33.

Further, FIG. 10 is a structural sectional view of another embodiment of the present invention. As shown, in this embodiment, the general substrate structure 47 is discarded, or the above-mentioned reflective layer 45 is directly formed by selecting a material having a direct conductive property, and is directly used as the lower electrode 59. . As a matter of course, the lower electrode 59 has a heat conducting property and has a function of ensuring the reliability of the work.

The conductive contact point 41 of the present invention is
It has a function of distributing the working current density and appropriately defining a current flow path. As a result, in the present invention, even if the current diffusion layer 33 is not provided, no obvious influence is exerted on the improvement of the emission brightness.

Finally, FIG. 11 is a structural sectional view of still another embodiment of the present invention. As illustrated, in order to extend the scope of use of the present invention, the spirit of the present invention is utilized to change the direct LED epitaxial layer 36 from a vertical light emitting diode structure to a planar light emitting diode,
Similarly, by using the reflective layer 55 or the bonding layer 56,
The first electrode 501 and the second electrode 502 are formed by joining the epitaxial layer 36 and the permanent substrate 47 and by using the combination of the conductive contact points 41 and the light-transmitting material layer 43 in place of some of the high carrier-doped layers 355. A high-intensity light source can be projected during energization between the two.

[0030]

In summary, according to the present invention, a light emitting diode with high emission brightness and a method for manufacturing the same are provided, in which a partial volume of a high carrier doped layer on the bottom side of an LED epitaxial layer is removed to form a space section, and a space. The zone is filled with a translucent material layer, which is used for projecting a light path and at the same time, the light emission luminance function in the LED element is significantly enhanced. Therefore, the present invention has novelty, inventive step and industrial utility value. Any modification or alteration of details that can be made based on the present invention shall fall within the scope of the claims of the present invention.

[Brief description of drawings]

FIG. 1 is a structural cross-sectional view of a known light emitting diode.

FIG. 2 is a structural cross-sectional view of another known type of light emitting diode.

FIG. 3 is a structural sectional view at each manufacturing step of a preferred embodiment of the present invention.

FIG. 4 is a structural sectional view at each manufacturing step of the preferred embodiment of the present invention.

FIG. 5 is a structural sectional view at each manufacturing step of the preferred embodiment of the present invention.

FIG. 6 is a structural cross-sectional view at each manufacturing step of a preferred embodiment of the present invention.

FIG. 7 is a structural sectional view at each manufacturing step of the preferred embodiment of the present invention.

FIG. 8 is a structural sectional view at each manufacturing step of the preferred embodiment of the present invention.

FIG. 9 is a structural sectional view at each manufacturing step of the preferred embodiment of the present invention.

FIG. 10 is a structural cross-sectional view of another embodiment of the present invention.

FIG. 11 is a structural cross-sectional view of still another embodiment of the present invention.

[Explanation of symbols]

11 substrate 13 reflective layer 15 lower clad layer 155 high carrier doped layer 16 light emitting active layer 17 upper clad layer 18 current diffusion layer 100 current blocking layer 101 counter electrode 102 lower electrode 21 substrate 23 reflective layer 24 metal bonding layer 26 light emitting active layer 265 High carrier doped layer 201 1st
Electrode 202 Second electrode 31 Temporary substrate 33 Current diffusion layer 35 Lower clad layer 355 High carrier dope layer 36 Emission active layer 37 Upper clad layer 39 Counter electrode 41 Conductive contact layer 42 Space section 43 Translucent material layer 45 Reflective layer 46 Bonding layer 47 Permanent Substrate 49 Lower Electrode 55 Reflective Layer 56 Bonding Layer 59 Lower Electrode 501 First Electrode 502 Second
electrode

Continued front page    (72) Inventor Hiroyuki Riku             7ro, No. 446, Street 1050, Meihu Road, Hsinchu City, Taiwan (72) Inventor Zhu face tiger             Taiwan Hsinchu County Bamboo East Town Hokuxing Road 2nd tier 81 Street 6 Fuck 6             5 floors (72) Inventor Zhang             Taiwan Hsinchu Town Sanshan Township Shui Village Village New Road 147, 15             4 floors (72) Inventor King Confucius             Taiwan Chiayi Township Township Township Township Village 95 (72) Inventor Cai Tada             Taiwan Taoyuan Yongmei Town Jinxi-ri 25 Chung Long Qing East Street No. 79 (72) Inventor Hayashi Sanpo             Taiwan Taoyuan 縣 中 ▲ Reki ▼ Citizens' Road Sandan 75 Street 61             Fuck 26 (72) Inventor Huang Yongqiang             No. 45, 1st Road, Takemura, Dongshen Garden, Hsinchu City, Taiwan (72) Inventor Akinori Hayashi             Taiwan Hsinchu City Science Park 22 Bamboo Village 2nd Road East District 22             12-3 F-term (reference) 5F041 AA03 CA12 CA34 CA74 CB02                       DA19 DA34 DA35 DA36 DA39

Claims (21)

[Claims] 1. A method of manufacturing a light emitting diode with enhanced light emission brightness, wherein an LED epitaxial layer having at least one light emitting active layer is grown on a surface of a temporary substrate, and the bottom side of the light emitting diode is naturally subjected to high carrier doping. A step of forming a layer, a step of peeling off the temporary substrate, a step of forming at least one conductive contact layer on a part of the bottom side surface of the high carrier-doped layer, and a step of forming a high layer whose surface is not connected to the conductive contact layer. Removing the carrier-doped layer and forming a space section between each of the two high-carrier-doped layers; forming a light-transmitting material layer in the space section; and forming one permanent substrate with the light-transmitting material layer. And a step of connecting to the bottom side position of the light emitting diode. . 2. The method according to claim 2, further comprising the step of forming a reflective layer at a bottom side position of the translucent material layer and connecting the permanent substrate to the bottom side of the reflective layer. Item 2. A method for manufacturing a light-emitting diode with increased emission brightness according to Item 1. 3. The method according to claim 1, further comprising the step of forming a bonding layer on the upper side of the permanent substrate and further bonding the bonding layer to the bottom side of the translucent material layer. A method for manufacturing a light-emitting diode having enhanced light emission brightness according to the above. 4. The manufacturing method according to claim 1, further comprising forming a lower electrode on the bottom side of the permanent substrate and forming a counter electrode on the upper side of the LED epitaxial layer. A method of manufacturing a light emitting diode with enhanced light emission brightness. 5. In the above manufacturing method, the counter electrode is formed on the upper side of the LED epitaxial layer before the temporary substrate is peeled off, and the lower electrode is formed on the bottom side of the permanent substrate before the permanent substrate is connected to the transparent material layer. The method for manufacturing a light emitting diode with increased emission brightness according to claim 4, characterized in that the light emitting diode is formed. 6. The current spreading layer in the manufacturing method according to claim 1,
The method for manufacturing a light emitting diode with increased emission brightness according to claim 1, further comprising a step of forming on the upper side of the ED epitaxial layer. 7. The transparent material layer in the manufacturing method,
ITO having conductive characteristics, zinc oxide, indium oxide,
The method for manufacturing a light emitting diode with increased emission brightness according to claim 1, characterized in that the light emitting diode is formed of either tin oxide or a combination thereof. 8. The transparent material layer in the manufacturing method,
The method for manufacturing a light emitting diode with increased emission luminance according to claim 1, wherein the light emitting diode is formed of a polymer, quartz, glass, or a combination thereof that does not have conductive properties. 9. The manufacturing method according to claim 1, wherein the permanent substrate is formed of a material having good heat conduction characteristics.
A method for manufacturing a light emitting diode according to claim 1, wherein the light emitting luminance is increased. 10. The manufacturing method according to claim 9, wherein the permanent substrate is formed of silicon, boron nitride, aluminum nitride, aluminum oxide, magnesium oxide, titanium dioxide, or a combination thereof. And a method for manufacturing a light emitting diode having improved emission brightness. 11. The method according to claim 1, wherein an LED epitaxial layer is formed to form a planar LED element, and a first electrode and a second electrode are formed on the upper surface of the LED epitaxial layer, respectively. And a method for manufacturing a light emitting diode having improved emission brightness. 12. A light emitting diode with increased emission brightness, wherein an LED epitaxial layer having at least one light emitting active layer and having a plurality of space sections on the bottom side, and a space section of the LED epitaxial layer are formed. At least one conductive contact layer provided on the bottom surface, a transparent material layer provided in the space, a bonding layer provided between the transparent material layer and the permanent substrate, and a permanent substrate A light emitting diode with enhanced light emission brightness, comprising: a bottom electrode provided on the bottom side and a counter electrode provided on the upper side position of the LED epitaxial layer. 13. The light emitting diode of claim 12, wherein a reflective layer is provided between the transparent material layer and the bonding layer in the light emitting diode. 14. The light emitting diode of claim 13, wherein the reflective layer is formed of the same material as the bonding layer in the light emitting diode. 15. The light emitting diode of claim 12, wherein a current diffusion layer is provided between the LED epitaxial layer and a counter electrode in the light emitting diode. 16. The light emitting diode of claim 12, wherein the junction layer of the light emitting diode is also formed as a lower electrode. 17. The light emitting diode according to claim 12, wherein the light transmissive material layer is formed of any one of ITO, zinc oxide, indium oxide, tin oxide and a combination thereof having a conductive property. A light-emitting diode having the described emission brightness. 18. The light emission brightness of claim 12, wherein the light transmissive material layer of the light emitting diode is formed of a polymer, quartz, glass or a combination thereof having no conductive property. Light emitting diode 19. The light emitting diode of claim 12, wherein the permanent substrate of the light emitting diode is made of a material having a good heat conducting property. 20. The light emitting diode according to claim 19, wherein the permanent substrate is formed of any one of silicon, boron nitride, aluminum nitride, aluminum oxide, magnesium oxide, titanium dioxide, and a combination thereof. A light-emitting diode having the described emission brightness. 21. In the light emitting diode, an LED
Epitaxial layer is an upright LED device and a planar LED
13. The device according to claim 12, wherein the device is any one of the devices.
A light-emitting diode having an increased emission brightness according to.