CN220041892U - Flip-chip thin-film LED chip with miniature conical structure and light-emitting device - Google Patents
Flip-chip thin-film LED chip with miniature conical structure and light-emitting device Download PDFInfo
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- CN220041892U CN220041892U CN202320115005.3U CN202320115005U CN220041892U CN 220041892 U CN220041892 U CN 220041892U CN 202320115005 U CN202320115005 U CN 202320115005U CN 220041892 U CN220041892 U CN 220041892U
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
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Abstract
The utility model provides a flip film LED chip with a miniature conical structure and a light-emitting device, comprising: the light-emitting diode comprises an epitaxial light-emitting structure, a light-emitting diode and a light-emitting diode, wherein the epitaxial light-emitting structure is provided with an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer which are sequentially stacked; the second surface of the N-type epitaxial layer is used as a light emitting surface of the thin film LED chip, and is provided with a plurality of micro cone structures which are densely distributed, and the micro cone structures are used for improving light emitting efficiency by applying the diffuse reflection principle; an electrode structure comprising a P electrode and an N electrode; the P electrode is arranged on the first surface of the P-type epitaxial layer, and the N electrode is arranged on the first surface of the N-type epitaxial layer; and the substrate is bonded with the second surface of the N-type epitaxial layer.
Description
Technical Field
The utility model belongs to the field of semiconductor illumination, and particularly relates to a flip film LED chip with a miniature conical structure and a light-emitting device.
Background
The Light Emitting Diode (LED) has the advantages of small volume, high efficiency, long service life and the like, and has wide application in the fields of traffic indication, outdoor full-color display and the like. In particular, the use of high-power leds may realize semiconductor solid-state lighting, which has led to a revolution in human illumination history and has become a research hotspot in the current electronics field.
At present, the LED chip has higher and higher requirements on brightness, and particularly has wide practical application values in the fields of scientific research, national defense and military, illumination, communication technology, industrial production, biomedicine, environment detection and the like, but the brightness of the existing LED chip is difficult to meet the market demands due to low light emitting efficiency, so that a high-brightness thin film LED chip is urgently needed.
Disclosure of Invention
The utility model provides a flip film LED chip with a miniature conical structure and a light-emitting device, so as to meet the high-brightness requirement of the film LED chip in the market.
According to a first aspect of the present utility model, there is provided a flip film LED chip having a micro cone structure, comprising:
the light-emitting diode comprises an epitaxial light-emitting structure, a light-emitting diode and a light-emitting diode, wherein the epitaxial light-emitting structure is provided with an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer which are sequentially stacked; the second surface of the N-type epitaxial layer is used as a light emergent surface of the thin film LED chip, and is provided with a plurality of micro cone structures which are densely distributed, wherein the micro cone structures are used for improving light emergent efficiency;
an electrode structure comprising a P electrode and an N electrode; the P electrode is arranged on the first surface of the P-type epitaxial layer, and the N electrode is arranged on the first surface of the N-type epitaxial layer;
and the substrate is bonded with the second surface of the N-type epitaxial layer.
Optionally, the N-type epitaxial layer further includes a first step surface and a second step surface on the same side; the first step surface is lower than the second step surface, the light-emitting layer and the P-type epitaxial layer are sequentially stacked on the first surface of the second step surface, and the N electrode is arranged on the first step surface; the first step surface and the second step surface are opposite to the second surface of the N-type epitaxial layer.
Optionally, the thin film LED chip further comprises a current diffusion layer for conducting electricity of the thin film LED chip; the current diffusion layer is arranged between the P electrode and the P-type epitaxial layer.
Optionally, the current diffusion layer includes an indium tin oxide transparent electrode layer.
Optionally, the thin film LED chip further includes an insulating layer, which is used for preventing the thin film LED chip from leaking electricity, the insulating layer is disposed on the first step surface except for other areas of the N electrode, and is further disposed on the current diffusion layer except for other areas of the P electrode, and is further disposed on a step sidewall between the first step surface and the second step surface.
Optionally, the insulating layer includes a SiO2 film layer.
Optionally, the substrate comprises a transparent sapphire substrate.
Optionally, the substrate further comprises transparent optical glass.
Optionally, the material of the N-type epitaxial layer is N-type GaN.
Optionally, the material of the P-type epitaxial layer is P-type GaN.
According to a second aspect of the present utility model, there is provided a light emitting device, including the flip-chip thin film LED chip of the first aspect of the present utility model and the micro taper structure provided by the alternative.
The second surface of the N-type epitaxial layer is used as the light emergent surface of the thin film LED chip, and a plurality of densely arranged micro conical structures are etched on the second surface of the N-type epitaxial layer, so that the light emergent efficiency of the thin film LED chip is improved.
Drawings
The utility model will be described in further detail with reference to the drawings and the detailed description.
Fig. 1 is a schematic cross-sectional view of a flip film LED chip with a micro-cone structure according to an embodiment of the present utility model;
fig. 2 is a schematic cross-sectional view of a structure obtained in step 1 in a process of manufacturing a micro-cone-structured flip-chip thin-film LED chip according to an embodiment of the present utility model;
fig. 3 is a schematic cross-sectional view of a structure obtained in step 2 in a process of manufacturing a micro cone-shaped flip film LED chip according to an embodiment of the present utility model;
fig. 4 is a schematic cross-sectional view of a structure obtained in step 3 in a process of manufacturing a micro cone-shaped flip film LED chip according to an embodiment of the present utility model;
fig. 5 is a schematic cross-sectional view of a structure obtained in step 4 in a process of manufacturing a micro-cone-shaped flip-chip thin-film LED chip according to an embodiment of the present utility model;
fig. 6 is a schematic cross-sectional view of a structure obtained in step 5 in a process of manufacturing a micro-cone-shaped flip-chip thin-film LED chip according to an embodiment of the present utility model;
fig. 7 is a schematic cross-sectional view of a structure obtained in step 6 in a process of manufacturing a micro-cone-shaped flip-chip thin-film LED chip according to an embodiment of the present utility model;
fig. 8 is a schematic cross-sectional view of a structure obtained in step 7 in a process of manufacturing a micro-cone-shaped flip-chip thin-film LED chip according to an embodiment of the present utility model;
fig. 9 is a flowchart of a preparation process of a flip-chip thin-film LED chip with a micro-cone structure according to an embodiment of the present utility model.
Reference numerals illustrate:
10-N electrode;
20-a current diffusion layer;
a 30-P type epitaxial layer;
40-a light emitting layer;
a 50-N type epitaxial layer;
60-a substrate;
70-micro cone structure;
80-an insulating layer;
a 90-P electrode;
100-temporary substrate;
110-a growth substrate.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. The terms "first," "second," "third," "fourth" and the like in the description and in the claims and in the above drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1, an embodiment of the present utility model provides a flip film LED chip with a micro cone structure, including:
an epitaxial light emitting structure having an N-type epitaxial layer 50, a light emitting layer 40, and a P-type epitaxial layer 30 stacked in this order; the second surface of the N-type epitaxial layer 50 is used as the light emitting surface of the thin film LED chip, and has a plurality of densely arranged micro cone structures 70, where the micro cone structures 70 are used to improve the light emitting efficiency; the specific principle is as follows: the reflection effect of the light is positively correlated with the reflection times of the light, and the more the reflection times are, the better the reflection effect of the light is; when light rays are incident into the densely arranged micro cone structures 70, diffuse reflection occurs, so that the light rays are reflected for multiple times, and the aim of improving the light emitting efficiency is fulfilled.
An electrode structure including a P electrode 90 and an N electrode 10; the P electrode 90 is disposed on the first surface of the P-type epitaxial layer 30, and the N electrode 10 is disposed on the first surface of the N-type epitaxial layer 50;
a substrate 60, wherein the substrate 60 is bonded to the second surface of the N-type epitaxial layer 50.
In one embodiment, the N-type epitaxial layer 50 further includes a first step surface and a second step surface on the same side; wherein the first step surface is lower than the second step surface, and the light emitting layer 40 and the P-type epitaxial layer 30 are sequentially stacked on the first surface of the second step surface, and the N electrode 10 is disposed on the first step surface; wherein the first step surface and the second step surface are opposite to the second surface of the N-type epitaxial layer 50.
As a specific embodiment, the thin film LED chip further includes a current diffusion layer 20 for conducting electricity of the thin film LED chip; the current spreading layer 20 is disposed between the P-electrode 90 and the P-type epitaxial layer 30.
As a specific embodiment, the current diffusion layer 20 includes an indium tin oxide transparent electrode layer.
As a specific embodiment, the thin film LED chip further includes an insulating layer 80 for preventing the thin film LED chip from leaking, where the insulating layer 80 is disposed on the first step surface except for the other areas of the N electrode 10, and is further disposed on the current diffusion layer 20 except for the other areas of the P electrode 90, and is further disposed on the step sidewall between the first step surface and the second step surface.
As a specific embodiment, the insulating layer 80 includes a SiO2 film layer, and of course, other materials having an insulating function are also included in the scope of the present utility model.
As a specific embodiment, the substrate 60 includes a transparent sapphire substrate, or may be a transparent optical glass, which is not limited herein.
In one embodiment, the material of the N-type epitaxial layer 50 is N-type GaN, and the material of the P-type epitaxial layer 30 is P-type GaN.
Referring to fig. 9, the preparation process of the micro cone-shaped flip film LED chip provided by the embodiment of the utility model specifically includes:
s1: a current spreading layer 20 is sputtered on the epitaxial layer.
S2: a mesa step is etched on top of the N-type epitaxial layer 50 of the epitaxial wafer.
S3: an insulating layer 80 is grown on top of the epitaxial layer.
S4: p electrode 90 and N electrode 10 are fabricated on top of insulating layer 80.
S5: the chip is bonded to a temporary substrate 100 via P-electrode 90 and N-electrode 10.
S6: the growth substrate 110 of the epitaxial layer is stripped and densely packed micro-tapered structures 70 are etched in the bottom of the N-type epitaxial layer 50.
S7: the chip is bonded to a substrate 60 through the bottom of the N-type epitaxial layer 50.
S8: the temporary substrate 100 is peeled off.
As an embodiment, referring to fig. 2, sputtering a current diffusion layer 20 on the epitaxial layer in S1 specifically includes: the epitaxial layer is cleaned by chemical liquid medicine, and an ITO film layer, namely the current diffusion layer 20, is sputtered on the surface of the epitaxial layer through a sputtering process.
As an embodiment, referring to fig. 3, etching a mesa on top of the N-type epitaxial layer 50 of the epitaxial wafer in S2 specifically includes: a mesa lithography pattern is formed on the surface of the P-type epitaxial layer 30 by a lithography process, and then an ITO pattern is etched on the current diffusion layer 20 by wet etching; a mesa step is then etched on top of the N-type epitaxial layer 50 by an ICP etching process.
As an embodiment, referring to fig. 4, growing an insulating layer 80 on top of the epitaxial layer in S3 specifically includes: through a PECVD process, an SIO2 film layer, namely an insulating layer 80, is grown on the mesa surface of the N-type epitaxial layer 50 and the surface of the current diffusion layer 20, and SIO2 patterns are etched on the surface of the insulating layer 80 through a photolithography process and an ICP etching process.
As an embodiment, referring to fig. 5, in S4, fabricating the P electrode 90 and the N electrode 10 on top of the insulating layer 80 specifically includes: PAD photoresist patterns are respectively formed on the mesa step surface of the N-type epitaxial layer 50 and the surface of the current diffusion layer 20 through a photolithography process; then, the N electrode 10 and the P electrode 90 are fabricated in the photoresist pattern region by an evaporation process and a lift-off process.
As an embodiment, referring to fig. 6, bonding the chip to a temporary substrate 100 through the P electrode 90 and the N electrode 10 in S5 specifically includes: the temporary substrate 100 is bonded to the N electrode 10 and the P electrode 90 by a bonding paste.
As an embodiment, referring to fig. 7, S6, the epitaxial growth substrate 110 is stripped, and the densely arranged micro-cone structures 70 are etched at the bottom of the N-type epitaxial layer 50, which specifically includes: the growth substrate 110 of the epitaxial layer is stripped off by a stripping technique, and then the densely-arranged micro-tapered structures 70 are etched at the bottom of the N-type epitaxial layer 50 by a wet etching stripping technique. Because the etched densely arranged micro cone structures 70 are etched completely along the GaN crystal face in a wet etching manner, the pattern structure can obtain a nano level and has a very high light-emitting interface, and the sizes of the generated cone structures are different according to different etching times in different areas at the bottom of the N-type epitaxial layer 50, specifically, the longer the etching time is, the larger the generated cone structures are; of course, the micro taper structures 70 densely arranged at the bottom of the N-type epitaxial layer 50 may be etched using dry etching, but the effect is not limited thereto as the wet etching.
As an embodiment, referring to fig. 8, bonding the chip to a substrate 60 through the bottom of the N-type epitaxial layer 50 in S7 specifically includes: the bottom of the N-type epitaxial layer 50 is bonded to the substrate 60 by a bonding process, wherein the substrate 60 may be transparent optical glass, transparent sapphire substrate, or the like, and is not limited herein.
The flip film LED chip with the micro conical structure provided by the embodiment of the utility model has the beneficial effects that: 1. the second surface of the N-type epitaxial layer 50 is used as the light emitting surface of the thin film LED chip, and a plurality of densely arranged micro cone structures 70 are etched on the second surface of the N-type epitaxial layer 50 by using the diffuse reflection principle, so as to improve the light emitting efficiency of the thin film LED chip.
The embodiment of the utility model also provides a light-emitting device, which comprises the inverted film LED chip with the micro conical structure.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present utility model, and not for limiting the same; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the utility model.
Claims (11)
1. A micro cone structured flip chip thin film LED chip comprising:
the light-emitting diode comprises an epitaxial light-emitting structure, a light-emitting diode and a light-emitting diode, wherein the epitaxial light-emitting structure is provided with an N-type epitaxial layer, a light-emitting layer and a P-type epitaxial layer which are sequentially stacked; the second surface of the N-type epitaxial layer is used as a light emergent surface of the thin film LED chip, and is provided with a plurality of micro cone structures which are densely distributed, wherein the micro cone structures are used for improving light emergent efficiency;
an electrode structure comprising a P electrode and an N electrode; the P electrode is arranged on the first surface of the P-type epitaxial layer, and the N electrode is arranged on the first surface of the N-type epitaxial layer;
and the substrate is bonded with the second surface of the N-type epitaxial layer.
2. The micro-cone structured flip-chip thin film LED chip of claim 1, wherein said N-type epitaxial layer further comprises a first step surface and a second step surface on the same side; the first step surface is lower than the second step surface, the light-emitting layer and the P-type epitaxial layer are sequentially stacked on the first surface of the second step surface, and the N electrode is arranged on the first step surface; the first step surface and the second step surface are opposite to the second surface of the N-type epitaxial layer.
3. The micro-cone structured flip-chip thin film LED chip of claim 2, further comprising a current spreading layer for conducting electricity of said thin film LED chip; the current diffusion layer is arranged between the P electrode and the P-type epitaxial layer.
4. The micro-cone structured flip-chip thin film LED chip of claim 3, wherein said current spreading layer comprises an indium tin oxide transparent electrode layer.
5. The micro taper structured flip chip thin film LED chip of claim 3, further comprising an insulating layer for preventing leakage of the thin film LED chip, the insulating layer being disposed on the first step surface except for the other region of the N electrode, and being disposed on the current diffusion layer except for the other region of the P electrode, and being disposed on the step sidewall between the first step surface and the second step surface.
6. The micro-cone structured flip chip thin film LED chip of claim 5, wherein said insulating layer comprises a SiO2 film layer.
7. The micro-cone structured flip-chip thin film LED chip of claim 1, wherein said substrate comprises a transparent sapphire substrate.
8. The micro-cone structured flip-chip thin film LED chip of claim 1, wherein said substrate further comprises a transparent optical glass.
9. The micro-cone structured flip-chip thin film LED chip of claim 1, wherein said N-type epitaxial layer is N-type GaN.
10. The micro-cone structured flip-chip thin-film LED chip of claim 1, wherein said P-type epitaxial layer is P-type GaN.
11. A light emitting device characterized by comprising the micro cone structure flip film LED chip of any one of claims 1 to 10.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320115005.3U CN220041892U (en) | 2023-01-18 | 2023-01-18 | Flip-chip thin-film LED chip with miniature conical structure and light-emitting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320115005.3U CN220041892U (en) | 2023-01-18 | 2023-01-18 | Flip-chip thin-film LED chip with miniature conical structure and light-emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN220041892U true CN220041892U (en) | 2023-11-17 |
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| CN202320115005.3U Active CN220041892U (en) | 2023-01-18 | 2023-01-18 | Flip-chip thin-film LED chip with miniature conical structure and light-emitting device |
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| CN (1) | CN220041892U (en) |
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- 2023-01-18 CN CN202320115005.3U patent/CN220041892U/en active Active
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