TW201436286A - Manufacturing method of light emitting diode array and manufacturing method of light emitting diode display device - Google Patents

Abstract

A manufacturing method of a light emitting diode array includes following steps. A first substrate and a second substrate are provided. An inorganic light emitting material is formed on a first surface of the first substrate, and a transparent conductive layer is formed on the inorganic light emitting material. The second substrate is adhered to a second surface of the first substrate with the inorganic light emitting material. The first substrate is partially removed to form a plurality of bottom electrodes. The inorganic light emitting material is partially removed to form a plurality of light emitting material units. The transparent conductive layer is partially removed to form a plurality of top electrodes. Each of the light emitting material units is formed between the corresponding top electrode and the bottom electrode. The light emitting material unit, the corresponding top electrode, and the corresponding bottom electrode form a light emitting diode.

Description

Method for fabricating light-emitting diode array and fabrication of light-emitting diode display device method

The present invention relates to a method for fabricating a light-emitting diode array and a light-emitting diode display device, and more particularly to forming an inorganic light-emitting material on a surface of a substrate before bonding the substrate to another substrate. A subsequent patterning process to form a light-emitting diode array and a method of fabricating the LED display device.

Light-emitting diodes (LEDs) have been widely used in living environments due to their environmentally friendly characteristics, high photoelectric conversion efficiency, small size, long life, fixed wavelength and low heat generation. For example, large-scale display billboards in cities, traffic signs on streets, as small as electrical switch indicators, backlights of screens, etc., can gradually see the trend of gradually replacing traditional light sources with light-emitting diodes.

At present, the main application of LEDs in displays is the backlight module for liquid crystal panels, that is, to provide a so-called white light source. The current LED white light source generally uses a blue or ultraviolet LED with a phosphor material to produce white light or a color mixture of three primary colors to achieve white light illumination. However, the above methods still have problems such as process difficulty and high cost to be overcome. In addition, the industry has also published LED displays that directly use RGB LEDs to form display pixels, because the light-emitting diodes of various colors are separately produced. Later, it is mounted on the substrate by pick and place, which causes problems such as cumbersome process, difficulty in rework, and high cost of process equipment, which is not conducive to mass production.

One of the main objects of the present invention is to provide a light emitting diode array and a method of fabricating the same. The phosphor is formed by forming an inorganic luminescent material on the surface of a substrate, and bonding the substrate to another substrate to perform a subsequent patterning process. Thereby achieving the effect of simplifying the process and reducing the production cost.

In order to achieve the above object, a preferred embodiment of the present invention provides a method for fabricating an array of light emitting diodes, comprising the following steps. First, a first substrate and a second substrate are provided. Forming a phosphor on the first surface of the first substrate and forming a transparent conductive layer on the phosphor. The second surface of the first substrate on which the inorganic luminescent material is formed is bonded to the second substrate. Next, at least a portion of the first substrate is removed to form a plurality of lower electrodes, at least a portion of the phosphor is removed to form a plurality of phosphor units, and at least a portion of the transparent conductive layer is removed to form a plurality of electrode. Each of the luminescent material units is formed between the corresponding upper electrode and the lower electrode, and each of the luminescent material units and the corresponding upper and lower electrodes form a light emitting diode.

In order to achieve the above object, a preferred embodiment of the present invention provides a method of fabricating a light emitting diode display device, including the following steps. First, a first substrate and a second substrate are provided. Forming a phosphor on the first surface of the first substrate and forming a transparent conductive layer on the phosphor. The second surface of the first substrate on which the inorganic luminescent material is formed is bonded to the second substrate. Next, at least a portion of the first substrate is removed to form a plurality of lower electrodes, at least a portion of the phosphor is removed to form a plurality of phosphor units, and at least a portion of the transparent conductive layer is removed to form a plurality of electrode. Each of the luminescent material units is formed between the corresponding upper electrode and the lower electrode, and each luminescent material unit and the corresponding upper electrode are powered off The pole forms a light-emitting diode. Then, a plurality of color filter units are formed, and each of the color filter units and the at least one light-emitting diode correspond to each other.

100‧‧‧Lighting diode array

110‧‧‧First substrate

110A‧‧‧ first surface

110B‧‧‧ second surface

111‧‧‧ lower electrode

120‧‧‧second substrate

130‧‧‧Inorganic Luminescent Materials

131‧‧‧n type GaN nano rod

132‧‧‧Indium Gallium Nitride Nanodisk

133‧‧‧p type GaN nano rod

134‧‧‧Block

139‧‧‧Lighting material unit

140‧‧‧Transparent conductive layer

141‧‧‧Upper electrode

150‧‧‧Lighting diode

161‧‧‧First insulation

162‧‧‧Second insulation

171‧‧‧lower electrode lead

172‧‧‧Upper electrode lead

200‧‧‧Lighting diode display device

210‧‧‧ Third substrate

220‧‧‧Color Filter Unit

221‧‧‧First color filter unit

222‧‧‧Second color filter unit

223‧‧‧ Third color filter unit

230‧‧‧Adhesive layer

L1‧‧‧first color light

L2‧‧‧Second shade

L3‧‧‧ third color light

PX‧‧‧ pixel area

V1‧‧‧ first opening

V2‧‧‧ second opening

X‧‧‧ first direction

Y‧‧‧second direction

Z‧‧‧Vertical projection direction

1 to 8 are schematic views showing a method of fabricating a light emitting diode array according to a preferred embodiment of the present invention.

Figure 9 is a top plan view of a light emitting diode array in accordance with a preferred embodiment of the present invention.

FIG. 10 is a schematic view showing a method of fabricating a light-emitting diode display device according to a preferred embodiment of the present invention.

The present invention will be further understood by those of ordinary skill in the art to which the present invention pertains. .

Please refer to Figures 1 to 9. 1 to 8 are schematic views showing a method of fabricating a light emitting diode array according to a preferred embodiment of the present invention. FIG. 9 is a top view of the LED array of the embodiment. For the convenience of description, the drawings of the present invention are only for the purpose of understanding the present invention, and the detailed proportions thereof can be adjusted according to the design requirements. This embodiment provides a method for fabricating a light emitting diode array, including the following steps. First, as shown in FIG. 1, a first substrate 110 is provided, and a phosphor luminescent material 130 is formed on the first surface 110A of the first substrate 110. The first substrate 110 of the present embodiment preferably includes a heavily doped N-type germanium substrate. However, the present invention is not limited thereto, and other types of conductive substrates, semiconductor substrates, and non-insulating substrates may be used as needed. The phosphor illuminating material 130 may include gallium nitride (GaN), indium gallium nitride (InGaN), or other suitable inorganic luminescent materials. For example, the inorganic luminescent material 130 of the present embodiment is preferably The utility model may include a plurality of n-type gallium nitride nanorods 131, a plurality of p-type gallium nitride nanorods 133, and a plurality of indium gallium nitride nanodisks 132, and indium gallium nitride nanocrystals. The disk 132 is formed between the n-type gallium nitride nanorod 131 and the p-type gallium nitride nanorod 133. In other words, the n-type gallium nitride nanorod 131, the indium gallium nitride nanodisk 132, and the p-type gallium nitride nanorod 133 are preferably sequentially oriented perpendicular to the vertical projection direction Z of the first substrate 110. The stack is formed on the first surface 110A of the first substrate 110, but is not limited thereto. The n-type gallium nitride nanorod 131, the p-type gallium nitride nanorod 133, and the indium gallium nitride nanodisk 132 are preferably formed by a molecular beam epitaxy (MBE) method. On the substrate 110, but not limited thereto. Each of the indium gallium nitride nanodisks 132 can be formed by different process temperatures to achieve the desired combination. Further, between the n-type gallium nitride nanorod 131 and the indium gallium nitride nanodisk 132, between the indium gallium nitride nanodisk 132 and the p-type gallium nitride nanorod 133, and each of the indium gallium nitride The barrier layer 134 may also be formed between the rice trays 132, and the barrier layer 134 may also be formed of gallium nitride, but is not limited thereto.

Then, as shown in FIG. 2, a transparent conductive layer 140 is formed on the inorganic luminescent material 130, and a second substrate 120 is provided, and the second surface 110B of the first substrate 110 on which the inorganic luminescent material 130 is formed and the second substrate are formed. 120 for fitting. The second surface 110B is opposite the other surface of the first surface 110A. The transparent conductive layer 140 may preferably comprise a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO) and aluminum zinc oxide (AZO) or other suitable transparent conductive materials. material. It should be noted that the transparent conductive layer 140 of the present embodiment is formed before or after the first substrate 110 and the second substrate 120 are bonded together according to the process. Next, as shown in FIG. 3, at least a portion of the transparent conductive layer 140 and the phosphor luminescent material 130 are removed to partially expose the first substrate 110. Then, as shown in FIGS. 3 and 4, at least a portion of the transparent conductive layer 140 is further removed to form a plurality of upper electrodes 141, and at least a portion of the phosphors 130 are removed to form a plurality of luminescent material units 139. And at least a portion of the first substrate 110 is removed to form a plurality of lower electrodes 111, and thus, a plurality of light emitting diodes 150 can be formed and a plurality of pixel regions PX can be defined. Please also note that the manner of removing the first substrate 110, the inorganic luminescent material 130 and the transparent conductive layer 140 is preferably performed by a yellow lithography process and an etching process, but is not limited thereto. In addition, considering the difference in material selection and etching characteristics of the first substrate 110, the inorganic luminescent material 130, and the transparent conductive layer 140, the first substrate 110, the inorganic luminescent material 130, and the transparent conductive layer 140 can be partially formed by the same etching process. The effect of the removal may also partially remove the first substrate 110, the phosphor illuminating material 130, and the transparent conductive layer 140, respectively, in a plurality of different etching processes. Each of the luminescent material units 139 is formed between the corresponding upper electrode 141 and the lower electrode 111, and each of the luminescent material units 139 forms a light emitting diode 150 with the corresponding upper electrode 141 and lower electrode 111. In other words, the method for fabricating the LED array of the present embodiment is to form a plurality of pixel regions PX arranged in an array on the second substrate 120 by forming the lower electrode 111 by an etching process, and each of the two LEDs The polar body 150 is formed in each of the pixel regions PX.

As shown in FIG. 5, the method for fabricating the LED array of the present embodiment further includes forming an insulating layer on the second substrate 120 after the formation of each of the LEDs 150, covering the LEDs 150 and the second substrate. 120. Then, a portion of the insulating layer is removed to form a first insulating layer 161 having a plurality of first openings V1, and each of the first openings V1 partially exposes each of the lower electrodes 111. Next, as shown in FIG. 6, a plurality of lower electrode wires 171 are formed, and each of the lower electrode wires 171 is electrically connected to the corresponding lower electrode 111 through the first opening V1. Then, as shown in FIG. 7, another insulating layer is formed on the second substrate 120, covering the first insulating layer 161 and the lower electrode wire 171, and a portion of the insulating layer and a portion of the first insulating layer 161 are removed to form A second insulating layer 162 having a plurality of second openings V2. Each of the second openings V2 simultaneously penetrates the second insulating layer 162 and the first insulating layer 161 to partially expose the respective upper electrodes 141. Thereafter, as shown in FIG. 8, a plurality of upper electrode wires 172 are formed, and each of the upper electrode wires 172 is electrically connected to the corresponding upper electrode 141 through the second opening V2. By the above steps The light emitting diode array 100 as shown in Fig. 8 is completed.

As shown in FIG. 8 and FIG. 9, FIG. 9 is a top view of the LED array. In the LED array 100 of the present embodiment, the lower electrode lead 171 is preferably in the first direction. Preferably, the upper electrode lead 172 extends in the second direction Y, and the first direction X is preferably perpendicular to the second direction Y, but is not limited thereto. The first insulating layer 161 and the second insulating layer 162 may each comprise an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride or nitrogen-doped niobium (nitrogen-doped). Silicon carbide, SiCN), an organic material such as an acrylic resin or other suitable insulating material. The lower electrode lead 171 and the upper electrode lead 172 may preferably comprise a non-transparent conductive material such as silver, aluminum, copper, magnesium or molybdenum, a transparent conductive material such as indium tin oxide, indium zinc oxide and aluminum zinc oxide, a composite layer of the above materials or The alloy of the above materials, but not limited to this. It should be noted that the light-emitting diode 150 of the present embodiment preferably utilizes an n-type gallium nitride nanorod 131, an indium gallium nitride nanodisk 132, and a p-type gallium nitride nanoparticle in the luminescent material unit 139. The stacked structure of the rods 133 forms a white light emitting effect, but is not limited thereto. In addition, the LED array 100 of the present embodiment may be provided with a plurality of control elements (not shown) to control the illumination status of each of the LEDs 150 to achieve an active matrix driving effect, but The invention is not limited thereto, and the light-emitting diode array 100 may be driven in a passive matrix as needed.

Please refer to Figure 10, and please refer to Figure 1 to Figure 8. FIG. 10 is a schematic view showing a light emitting diode display device and a manufacturing method thereof according to a preferred embodiment of the present invention. This embodiment provides a method for fabricating a light emitting diode display device, including the following steps. First, as shown in FIGS. 1 to 4, a first substrate 110 and a second substrate 120 are provided. The inorganic luminescent material 130 is formed on the first surface 110A of the first substrate 110, and the transparent conductive layer 140 is formed on the inorganic luminescent material 130. The first substrate on which the inorganic luminescent material 130 is to be formed The second surface 110B of the 110 is bonded to the second substrate 120. At least a portion of the first substrate 110 is removed to form a plurality of lower electrodes 111, at least a portion of the phosphors 130 are removed to form a plurality of luminescent material units 139, and at least a portion of the transparent conductive layers 140 are removed to form A plurality of upper electrodes 141. Each of the luminescent material units 139 is formed between the corresponding upper electrode 141 and the lower electrode 111, and each of the luminescent material units 139 and the corresponding upper electrode 141 and the lower electrode 111 form each of the illuminating diodes 150 in each pixel region PX. . Next, as shown in FIGS. 5 to 8, the first insulating layer 161, the lower electrode lead 171, the second insulating layer 162, and the upper electrode lead 172 are sequentially formed to form the light-emitting diode as shown in FIG. Body array 100. The features of each step of the manufacturing method of the LED array 100 and the formation positions and material characteristics of the respective components have been described in detail above, and thus will not be described herein.

The LED device of the present embodiment is formed by forming a plurality of color filter units 220 after the LED array 100 is formed, and each of the color filter units 220 and the at least one LED body 150 are mutually connected. Correspondingly, a light-emitting diode display device 200 as shown in Fig. 10 is formed. More specifically, the manufacturing method of the LED display device of the present embodiment may further include providing the third substrate 210, and the color filter unit 220 is formed on the third substrate 210. As shown in FIG. 10, the manufacturing method of the LED device of the present embodiment may further include forming an adhesive layer 230 between the second substrate 120 and the third substrate 210 for bonding the second substrate 120 and the third substrate. The substrate 210 is not limited to the above-described manner. In other preferred embodiments of the present invention, the color filter unit 220 may be directly formed on the second substrate 120 to form a color filter array substrate ( Color filter on array, COA) structure. In this embodiment, the color filter unit 220 may include first color filter units 221, second color filter units 222, and third color filter units 223 of different colors such as red, green, and blue, respectively. They are arranged and correspond to different light-emitting diodes 150, respectively. The light generated by the LEDs 150 passes through the first color filter unit 221, the second color filter unit 222, and the third color filter unit 223 to form the first color light L1 and the second color light, respectively. L2 and third color light L3. By controlling the size of the light generated by each of the light-emitting diodes 150, the first color light L1, the second color light L2, and the third color light L3 can be formed into different color mixing effects, thereby achieving the purpose of full color display. It should be noted that the LEDs 150 of the present embodiment can pass through the n-type gallium nitride nanorods 131, the indium gallium nitride nanodisks 132, and the p-type gallium nitride nanorods in the luminescent material unit 139. The stacked structure of 133 forms a white light emitting effect in the entire visible light band, so that the color rendering and color saturation of the light emitting diode display device 200 can be improved in the case of the color filter unit 220. In addition, the light-emitting diode display device 200 of the present embodiment has no liquid crystal layer and an optical film such as a polarizer, so that each of the light-emitting diodes 150 is different from the light-emitting diode backlight module in the conventional liquid crystal display. It can be driven at a lower voltage to achieve the desired brightness, which in turn can improve overall performance and save energy.

In summary, the LED array and the LED display device of the present invention are formed by generating an inorganic luminescent material on the surface of the substrate, and then bonding the substrate to another substrate for subsequent processing. The patterning process forms a light-emitting diode, thereby achieving an effect of simplifying the process and reducing the production cost. In addition, the method for fabricating the light-emitting diode array and the light-emitting diode display device of the present invention further utilizes inorganic light emission such as an n-type gallium nitride nanorod, an indium gallium nitride nanodisk, and a p-type gallium nitride nanorod. The stacked structure of the material forms a light-emitting diode, thereby forming a white light-emitting effect in the full visible light band, and the color rendering and color saturation of the light-emitting diode display device can be improved under the condition of matching the color filter.

100‧‧‧Lighting diode array

110‧‧‧First substrate

111‧‧‧ lower electrode

120‧‧‧second substrate

131‧‧‧n type GaN nano rod

132‧‧‧Indium Gallium Nitride Nanodisk

133‧‧‧p type GaN nano rod

139‧‧‧Lighting material unit

140‧‧‧Transparent conductive layer

141‧‧‧Upper electrode

150‧‧‧Lighting diode

161‧‧‧First insulation

162‧‧‧Second insulation

171‧‧‧lower electrode lead

172‧‧‧Upper electrode lead

PX‧‧‧ pixel area

V1‧‧‧ first opening

V2‧‧‧ second opening

Z‧‧‧Vertical projection direction

Claims (16)

A method for fabricating a light-emitting diode array includes: providing a first substrate and a second substrate; forming a phosphor on a first surface of the first substrate; and forming a transparent conductive layer on the phosphor Forming a second surface of the first substrate on which the phosphor is formed with the second substrate; removing at least a portion of the first substrate to form a plurality of lower electrodes; at least a portion of the inorganic And removing at least a portion of the transparent conductive layer to form a plurality of upper electrodes, wherein each of the luminescent material units is formed between the corresponding upper electrode and the lower electrode And each of the luminescent material units and the corresponding upper electrode and the lower electrode form a light emitting diode. The method of claim 1, further comprising forming a plurality of pixel regions arranged in an array on the second substrate after the forming of the lower electrodes, and each of the light emitting diode systems is formed in each of the plurality of pixel regions. In the picture area. The method of claim 1, further comprising: forming a patterned first insulating layer covering the light emitting diodes and the second substrate, wherein the first insulating layer has a plurality of first openings, wherein Each of the first opening portions partially exposes each of the lower electrodes; a plurality of lower electrode wires are formed, wherein each of the lower electrode wires is electrically connected to the corresponding lower electrodes through the first openings; forming a patterned a second insulating layer covering the first insulating layer and the lower electrode wires, and the second insulating layer has a plurality of second openings, wherein each of the second opening portions Exposing each of the upper electrodes; and forming a plurality of upper electrode wires, wherein each of the upper electrode wires is electrically connected to the corresponding upper electrodes through the second openings. The method according to claim 1, wherein the inorganic luminescent material is formed on the first substrate by a molecular beam epitaxy (MBE) method. The manufacturing method of claim 1, wherein the first substrate comprises a heavily doped N-type germanium substrate. The method of claim 1, wherein the inorganic luminescent material comprises gallium nitride (GaN) and indium gallium nitride (InGaN). The method of claim 1, wherein the inorganic luminescent material comprises at least one n-type gallium nitride nanorod, at least one p-type gallium nitride nanorod, and at least one indium gallium nitride nanodisk (nanodisk), and the indium gallium nitride nanodisk is formed between the n-type gallium nitride nanorod and the p-type gallium nitride nanorod. A method for fabricating a light-emitting diode display device includes: providing a first substrate and a second substrate; forming a phosphor on a first surface of the first substrate; forming a transparent conductive on the phosphor a second surface of the first substrate on which the phosphor is formed is bonded to the second substrate; at least a portion of the first substrate is removed to form a plurality of lower electrodes; The phosphor is removed to form a plurality of luminescent material units; at least a portion of the transparent conductive layer is removed to form a plurality of upper electrodes, wherein each of the luminescent materials a unit is formed between the corresponding upper electrode and the lower electrode, and each of the luminescent material units and the corresponding upper electrode and the lower electrode form a light emitting diode; and a plurality of color filter units are formed, wherein Each of the color filter units and at least one of the light emitting diodes correspond to each other. The manufacturing method of claim 8, further comprising providing a third substrate, wherein the color filter units are formed on the third substrate. The manufacturing method of claim 9, further comprising forming an adhesive layer between the second substrate and the third substrate for bonding the second substrate and the third substrate. The method of claim 8, further comprising defining a plurality of pixel regions arranged in an array on the second substrate after the forming of the lower electrodes, and each of the light emitting diode systems is formed in each of the plurality of pixel regions. In the picture area. The method of claim 8, further comprising: forming a patterned first insulating layer covering the light emitting diodes and the second substrate, and the first insulating layer has a plurality of first openings, wherein each The first opening portion partially exposes each of the lower electrodes; forming a plurality of lower electrode wires, wherein each of the lower electrode wires is electrically connected to the corresponding lower electrodes through the first openings; forming a patterned a second insulating layer covering the first insulating layer and the lower electrode wires, wherein the second insulating layer has a plurality of second openings, wherein each of the second opening portions partially exposes the upper electrodes; and forming a plurality of stripes And an electrode lead, wherein each of the upper electrode wires is electrically connected to the corresponding upper electrode through the second openings. The method of claim 8, wherein the inorganic luminescent material is formed on the first substrate by a molecular beam epitaxy. The method of claim 8, wherein the first substrate comprises a heavily doped N-type germanium substrate. The method of claim 8, wherein the inorganic luminescent material comprises gallium nitride and indium gallium nitride. The method of claim 8, wherein the inorganic luminescent material comprises at least one n-type gallium nitride nanorod, at least one p-type gallium nitride nanorod, and at least one indium gallium nitride nanodisk, and An indium gallium nitride nanowire array is formed between the n-type gallium nitride nanorod and the p-type gallium nitride nanorod.