CN103779460A - Light emitting device chip and manufacturing method thereof - Google Patents
Light emitting device chip and manufacturing method thereof Download PDFInfo
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- CN103779460A CN103779460A CN201410050409.4A CN201410050409A CN103779460A CN 103779460 A CN103779460 A CN 103779460A CN 201410050409 A CN201410050409 A CN 201410050409A CN 103779460 A CN103779460 A CN 103779460A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention provides a light emitting device chip and a manufacturing method of the light emitting device chip. The light emitting device chip sequentially comprises a reflection substrate, an electrode N, an epitaxial layer area N, an active area, an epitaxial layer area P and an electrode P from bottom to top. The reflection substrate comprises a dielectric layer, a silver mirror and a copper substrate. The reflection substrate is formed by the conversion mode of a growth substrate. The As of the growth substrate will not be involved in the follow-up technological processes of light emitting device preparation, and the pollution abatement cost of industrial wastewater is reduced. The reflection substrate can improve radiating performance. The growth substrate can be recycled, and the production cost is reduced. In this way, the light emitting device chip and the manufacturing method of the light emitting device chip have the obvious technical advancement and good economic benefits.
Description
Technical field
The present invention relates to LED field, refer to especially a kind of luminescent device chip and manufacture method thereof.
Background technology
In the preparation process of existing luminescent device chip, by disposable growth substrates use, or it is directly formed to product as the substrate of chip, or will after its wear down, form product with chip.Growth substrates is mostly as the part of chip product.
The conventional reddish yellow optical chip growth substrates using is GaAs at present, uses the chip product of this growth substrates can contain arsenic.In the preparation process of chip that uses this growth substrates, if applied growth substrates reduction process, in industrial wastewater, will contain GaAs particle, increase the pollution of industrial wastewater, improved the cost of pollutant discharge of enterprise and waste water treatment simultaneously.And, because GaAs is non-transparent material, will affect the light extraction efficiency of the chip that this type of chip forms.The etch stop layer corrosion rate wherein adopting is slow, and elimination is not thorough, need to increase the removing technique of follow-up complexity.
Summary of the invention
The present invention proposes a kind of luminescent device chip and manufacture method thereof, has solved impact on luminescent device chip cooling efficiency of growth substrates in prior art and the problem of environmental pollution bringing thereof.
Technical scheme of the present invention is achieved in that a kind of luminescent device chip, comprise: be followed successively by reflective, N electrode, epitaxial loayer N district, active area, epitaxial loayer P district and P electrode from bottom to top, described reflective comprises dielectric layer, silver mirror and copper substrate, and described reflective forms by the conversion regime of growth substrates.
Further, described growth substrates comprises preset conversion layer; Described preset conversion layer can be converted to described reflective by described growth substrates; Described dielectric layer and described silver mirror are by deposition, photoetching, etching and evaporation preparation, and described copper substrate is prepared by plating mode, and described dielectric layer comprises SiO
2, ITO or Si
3n
4, described copper substrate thickness range is 70 μ m～150 μ m.
Further, described preset conversion layer forms described epitaxial loayer N district, described active area and described epitaxial loayer P district from bottom to top successively by epitaxial growth mode; Described P electrode passes through evaporation BeAu, annealing, photoetching and is etched into, and described N electrode passes through evaporation GeAu, photoetching and is etched into.
Preferably, also comprise support substrates; Described epitaxial loayer P district forms adhesive layer by adhesion mode, the attached described support substrates of described adhesive layer; Or described epitaxial loayer P district by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.
Further, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
Preferably, described bonding medium is photoresist, and described photoresist is specially organic gel medium.
Further, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
Further, described growth substrates comprises GaAs; Described preset conversion layer comprises AlAs.
A manufacture method for luminescent device chip, comprises the steps:
A) described growth substrates successively epitaxial growth form preset conversion layer, epitaxial loayer N district, active area and epitaxial loayer P district;
B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode;
C) utilize the described preset conversion layer of corrosive liquid corrosion through step b) gained epitaxial wafer;
D) after growth substrates process surface treatment step described in step c) gained, recycle;
E) after process surface treatment step in epitaxial loayer N district described in step c) gained, carry out evaporation GeAu, photoetching and etching and make N electrode;
F) step e) gained epitaxial wafer is prepared to dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.
Preferably, a kind of manufacture method of luminescent device chip, comprises the steps:
1) described growth substrates successively epitaxial growth form preset conversion layer, epitaxial loayer N district, active area and epitaxial loayer P district;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make P electrode;
3) through step 2) gained epitaxial wafer surface by adhere to mode form adhesive layer, the attached support substrates of described adhesive layer, or by bonding medium in conjunction with described support substrates;
4) utilize the described preset conversion layer of corrosive liquid corrosion through step 3) gained epitaxial wafer;
5) after growth substrates process surface treatment step described in step 4) gained, recycle;
6) after process surface treatment step in epitaxial loayer N district described in step 4) gained, carry out evaporation GeAu, photoetching and etching and make N electrode;
7) step 6) gained epitaxial wafer is prepared to dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.
Preferably, after step 7), perform step 8), step 8) is eliminated described adhesive layer or described bonding medium by organic solvent dissolution method, removes described support substrates simultaneously; Step 8) is carried out in the temperature range of 50 ℃～100 ℃; After step 3) completes, be heated to 90 ℃～120 ℃ and maintain 10min～30min.
Preferably, described annealing is carried out in the temperature range of 450 ℃～500 ℃; The time range of described annealing is 5min～20min; Described etching is specially dry etching or wet etching, with optionally and/or anisotropic etching method carry out; Described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
Beneficial effect of the present invention is:
1) growth substrates can reuse, and saves cost;
2) As of growth substrates can not bring subsequent technique flow process prepared by luminescent device into, reduces the pollution control cost of industrial wastewater;
3) reflective has good heat dispersion.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the conventional substrate epitaxial chip architecture of prior art schematic diagram;
Fig. 2 is step 1) resulting structures schematic diagram of the present invention;
Fig. 3 is the schematic flow sheet of an embodiment of a kind of luminescent device manufacturing method of chip of the present invention;
Fig. 4 is the schematic flow sheet of another embodiment of a kind of luminescent device manufacturing method of chip of the present invention;
Fig. 5 is step 2 of the present invention) resulting structures schematic diagram;
Fig. 6 is step 3) resulting structures schematic diagram of the present invention;
Fig. 7 is step 4) resulting structures schematic diagram of the present invention;
Fig. 8 is step 7) resulting structures schematic diagram of the present invention;
Fig. 9 is luminescent device chip schematic diagram of the present invention.
In figure:
1, growth substrates; 2-1, etch stop layer; 2-2, preset conversion layer; 3, epitaxial loayer N district; 4, active area; 5, epitaxial loayer P district; 6, P electrode; 7, bonding medium; 8, support substrates; 9, N electrode; 10, dielectric layer; 11, silver mirror; 12, copper substrate.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 2 and Figure 9, a kind of luminescent device chip of the present invention, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts HF optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, the pollution of the As that has simultaneously avoided growth substrates 1 in luminescent device chip manufacturing to environment.
As shown in Figure 2 and Figure 9, a kind of luminescent device chip of the present invention, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts BOE optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, the pollution of the As that has simultaneously avoided growth substrates 1 in luminescent device chip manufacturing to environment.
As shown in Fig. 2, Fig. 6 and Fig. 9, a kind of luminescent device chip of the present invention, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.The present invention also comprises support substrates 8; Epitaxial loayer P district 5 forms adhesive layer by adhesion mode, the attached support substrates 8 of adhesive layer; Support substrates 8 is specially silicon substrate.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.
As shown in Fig. 2, Fig. 6 and Fig. 9, a kind of luminescent device chip of the present invention, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.The present invention also comprises support substrates 8; Epitaxial loayer P district 5 passes through bonding medium 7 in conjunction with support substrates 8; Support substrates 8 is specially Sapphire Substrate or quartz substrate.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.Bonding medium 7 can be delustered resist dissolve, the resist of delustering is specially acetone.Bonding medium 7 is photoresist, and photoresist is specially organic gel medium.
Embodiment 5
As shown in Fig. 2, Fig. 3, Fig. 5 and Fig. 9, the manufacture method of a kind of luminescent device chip of the present invention, comprises the steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode 6;
C) utilize corrosive liquid to corrode preset conversion layer 2-2 through step b) gained epitaxial wafer;
D) after step c) gained growth substrates 1 process surface treatment step, recycle;
E) after step c) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
F) step e) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode.
Before step b), first carry out cleaning operation.
Annealing is carried out at 450 ℃ of temperature; The time of annealing is 5min.
Lithographic method is specially dry etching, carries out by etching method optionally; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step before polishing step, and polishing step is specially chemical polishing; Cleaning step is specially corrosive liquid and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Embodiment 6
As shown in Fig. 2, Fig. 3, Fig. 5 and Fig. 9, the manufacture method of a kind of luminescent device chip of the present invention, comprises the steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode 6;
C) utilize corrosive liquid to corrode preset conversion layer 2-2 through step b) gained epitaxial wafer;
D) after step c) gained growth substrates 1 process surface treatment step, recycle;
E) after step c) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
F) step e) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode.
Before step b), first carry out cleaning operation.
Annealing is carried out at 500 ℃ of temperature; The time of annealing is 15min.
Lithographic method is specially wet etching, carries out by anisotropic etching method; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step after polishing step, and polishing step is specially mechanical polishing; Cleaning step is specially water and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Embodiment 7
As shown in Fig. 2 and Fig. 4～8, the manufacture method of a kind of luminescent device chip of the present invention, comprises the steps:
1) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make P electrode 6;
3) through step 2) gained epitaxial wafer surface by adhere to mode form adhesive layer, the attached support substrates 8 of adhesive layer;
4) utilize corrosive liquid to corrode preset conversion layer 2-2 through step 3) gained epitaxial wafer;
5) after step 4) gained growth substrates 1 process surface treatment step, recycle;
6) after step 4) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
7) step 6) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode.
After step 3) completes, be heated to 90 ℃ and maintain 30min.
Annealing is carried out at 480 ℃ of temperature; The time of annealing is 20min.
Lithographic method is specially dry etching, carries out by etching method optionally; Surface treatment step comprises detecting step and cleaning step; Cleaning step is specially corrosive liquid cleaning or water cleans; Detecting step is specially smoothness detection and surface cleanness detects.
As shown in Fig. 2 and Fig. 4～8, the manufacture method of a kind of luminescent device chip of the present invention, comprises the steps:
1) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make P electrode 6;
3) through step 2) gained epitaxial wafer surface by bonding medium 7 in conjunction with support substrates 8;
4) utilize corrosive liquid to corrode preset conversion layer 2-2 through step 3) gained epitaxial wafer;
5) after step 4) gained growth substrates 1 process surface treatment step, recycle;
6) after step 4) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
7) step 6) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode.
After step 3) completes, be heated to 120 ℃ and maintain 10min.
Annealing is carried out at 450 ℃ of temperature; The time of annealing is 20min.
Lithographic method is specially wet etching, carries out by anisotropic etching method; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step after polishing step, and polishing step is specially mechanical polishing; Cleaning step is specially water and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
As shown in Fig. 2 and Fig. 4～9, a kind of manufacture method of luminescent device chip, comprises the steps:
1) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make P electrode 6;
3) through step 2) gained epitaxial wafer surface by bonding medium 7 in conjunction with support substrates 8;
4) utilize corrosive liquid to corrode preset conversion layer 2-2 through step 3) gained epitaxial wafer;
5) after step 4) gained growth substrates 1 process surface treatment step, recycle;
6) after step 4) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
7) step 6) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode;
8) eliminate bonding medium 7 by organic solvent dissolution method, remove support substrates 8 simultaneously.
Step 8) is carried out at the temperature of 75 ℃.
After step 3) completes, be heated to 110 ℃ and maintain 20min.
Lithographic method is specially wet etching, carries out by anisotropic etching method; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step after polishing step, and polishing step is specially mechanical polishing; Cleaning step is specially water and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Embodiment 10
As shown in Fig. 2 and Fig. 4～9, a kind of manufacture method of luminescent device chip, comprises the steps:
1) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make P electrode 6;
3) through step 2) gained epitaxial wafer surface by bonding medium 7 in conjunction with support substrates 8;
4) utilize corrosive liquid to corrode preset conversion layer 2-2 through step 3) gained epitaxial wafer;
5) after step 4) gained growth substrates 1 process surface treatment step, recycle;
6) after step 4) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
7) step 6) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode;
8) eliminate bonding medium 7 by organic solvent dissolution method, remove support substrates 8 simultaneously.
Step 8) is carried out at the temperature of 50 ℃.After step 3) completes, be heated to 110 ℃ and maintain 15min.
Lithographic method is specially dry etching, carries out by etching method optionally; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step before polishing step, and polishing step is specially chemical polishing; Cleaning step is specially corrosive liquid and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
As shown in Fig. 2 and Fig. 4～9, a kind of manufacture method of luminescent device chip, comprises the steps:
1) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make P electrode 6;
3) through step 2) gained epitaxial wafer surface by adhere to mode form adhesive layer, the attached support substrates 8 of adhesive layer;
4) utilize corrosive liquid to corrode preset conversion layer 2-2 through step 3) gained epitaxial wafer;
5) after step 4) gained growth substrates 1 process surface treatment step, recycle;
6) after step 4) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 9;
7) step 6) gained epitaxial wafer is prepared to dielectric layer 10 and silver mirror 11 by deposition, photoetching, etching and evaporation, prepare copper substrate 12 by plating mode;
8) eliminate adhesive layer by organic solvent dissolution method, remove support substrates 8 simultaneously.
Step 8) is carried out at the temperature of 100 ℃.
After step 3) completes, be heated to 95 ℃ and maintain 18min.
Lithographic method is specially wet etching, carries out by anisotropic etching method; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step after polishing step, and polishing step is specially mechanical polishing; Cleaning step is specially water and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (12)
1. a luminescent device chip, it is characterized in that, comprise: be followed successively by reflective, N electrode, epitaxial loayer N district, active area, epitaxial loayer P district and P electrode from bottom to top, described reflective comprises dielectric layer, silver mirror and copper substrate, and described reflective forms by the conversion regime of growth substrates.
2. a kind of luminescent device chip according to claim 1, is characterized in that, described growth substrates comprises preset conversion layer; Described preset conversion layer can be converted to described reflective by described growth substrates; Described dielectric layer and described silver mirror are by deposition, photoetching, etching and evaporation preparation, and described copper substrate is prepared by plating mode, and described dielectric layer comprises SiO
2, ITO or Si
3n
4, described copper substrate thickness range is 70 μ m～150 μ m.
3. a kind of luminescent device chip according to claim 2, is characterized in that, described preset conversion layer forms described epitaxial loayer N district, described active area and described epitaxial loayer P district from bottom to top successively by epitaxial growth mode; Described P electrode passes through evaporation BeAu, annealing, photoetching and is etched into, and described N electrode passes through evaporation GeAu, photoetching and is etched into.
4. a kind of luminescent device chip according to claim 3, is characterized in that, also comprises support substrates; Described epitaxial loayer P district forms adhesive layer by adhesion mode, the attached described support substrates of described adhesive layer; Or described epitaxial loayer P district by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.
5. a kind of luminescent device chip according to claim 4, is characterized in that, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
6. a kind of luminescent device chip according to claim 5, is characterized in that, described bonding medium is photoresist, and described photoresist is specially organic gel medium.
7. a kind of luminescent device chip according to claim 2, is characterized in that, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
8. according to a kind of luminescent device chip described in claim 2～7 any one, it is characterized in that, described growth substrates comprises GaAs; Described preset conversion layer comprises AlAs.
9. a manufacture method for luminescent device chip claimed in claim 2, is characterized in that, comprises the steps:
A) described growth substrates preset conversion layer, epitaxial loayer N district, active area and epitaxial loayer P district described in epitaxial growth successively;
B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make described P electrode;
C) utilize the described preset conversion layer of corrosive liquid corrosion through step b) gained epitaxial wafer;
D) after growth substrates process surface treatment step described in step c) gained, recycle;
E) after process surface treatment step in epitaxial loayer N district described in step c) gained, carry out evaporation GeAu, photoetching and etching and make described N electrode;
F) step e) gained epitaxial wafer is prepared to described dielectric layer and described silver mirror by deposition, photoetching, etching and evaporation, prepare described copper substrate by plating mode.
10. a manufacture method for luminescent device chip claimed in claim 4, is characterized in that, comprises the steps:
1) described growth substrates preset conversion layer, epitaxial loayer N district, active area and epitaxial loayer P district described in epitaxial growth successively;
2) carry out evaporation BeAu, annealing, photoetching and etching through step 1) gained epitaxial wafer and make described P electrode;
3) through step 2) gained epitaxial wafer surface by adhere to mode form adhesive layer, the attached support substrates of described adhesive layer, or by bonding medium in conjunction with described support substrates;
4) utilize the described preset conversion layer of corrosive liquid corrosion through step 3) gained epitaxial wafer;
5) after growth substrates process surface treatment step described in step 4) gained, recycle;
6) after process surface treatment step in epitaxial loayer N district described in step 4) gained, carry out evaporation GeAu, photoetching and etching and make described N electrode;
7) step 6) gained epitaxial wafer is prepared to described dielectric layer and described silver mirror by deposition, photoetching, etching and evaporation, prepare described copper substrate by plating mode.
The manufacture method of 11. a kind of luminescent device chips according to claim 10, it is characterized in that, after described step 7), perform step 8), described step 8) is eliminated described adhesive layer or described bonding medium by organic solvent dissolution method, removes described support substrates simultaneously; Described step 8) is carried out in the temperature range of 50 ℃～100 ℃; After described step 3) completes, be heated to 90 ℃～120 ℃ and maintain 10min～30min.
12. according to the manufacture method of a kind of luminescent device chip described in claim 9 or 10, it is characterized in that, described annealing is carried out in the temperature range of 450 ℃～500 ℃; The time range of described annealing is 5min～20min; Described etching is specially dry etching or wet etching, with optionally and/or anisotropic etching method carry out; Described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
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| CN101515614A (en) * | 2008-02-20 | 2009-08-26 | 日立电线株式会社 | Semiconductor light-emitting device |
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- 2014-02-13 CN CN201410050409.4A patent/CN103779460A/en active Pending
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|---|---|---|---|---|
| US20030111667A1 (en) * | 2001-12-13 | 2003-06-19 | Schubert E. Fred | Light-emitting diode with planar omni-directional reflector |
| JP2003258316A (en) * | 2002-02-21 | 2003-09-12 | Korai Kagi Kofun Yugenkoshi | Light emitting diode having enhanced light emission luminance and its manufacturing method |
| CN1667849A (en) * | 2004-03-10 | 2005-09-14 | 信越半导体株式会社 | Light emitting element and manufacturing method thereof |
| CN101515614A (en) * | 2008-02-20 | 2009-08-26 | 日立电线株式会社 | Semiconductor light-emitting device |
| CN102082214A (en) * | 2010-11-29 | 2011-06-01 | 华南师范大学 | Method for preparing GaN-based light emitting diode (LED) semiconductor chip |
| CN203733826U (en) * | 2014-02-13 | 2014-07-23 | 马鞍山太时芯光科技有限公司 | Light emitting device chip |
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