CN103779461A - Substrate and method for recycling substrate - Google Patents
Substrate and method for recycling substrate Download PDFInfo
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- CN103779461A CN103779461A CN201410050546.8A CN201410050546A CN103779461A CN 103779461 A CN103779461 A CN 103779461A CN 201410050546 A CN201410050546 A CN 201410050546A CN 103779461 A CN103779461 A CN 103779461A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention provides a substrate and a method for recycling the substrate. The substrate capable of being recycled comprises a growing substrate body and a preset conversion layer, the preset conversion layer is capable of converting the growing substrate body into a reflection substrate body. The method for recycling the substrate comprises the following steps that the preset conversion layer and a functional layer are formed from the growing substrate body in sequence in an epitaxial growth mode, the preset conversion layer is selectively eliminated through corrosion liquid, the obtained growing substrate body is recycled after surface treatment is carried out on the obtained growing substrate body, after the surface treatment is carried out on the obtained functional layer, depositing, photoetching, etching and evaporating are carried out on the functional layer to prepare a dielectric layer and a silver mirror, and a copper substrate body is prepared through the electroplating method. The growing substrate body can be recycled, and cost can be saved. The As of the growing substrate body cannot be brought to the following working procedures, the pollution regulation cost for industrial waste water is reduced, and the substrate has obvious technological advancement and good economic benefits.
Description
Technical field
The present invention relates to LED field, refer to especially a kind of method of substrate and recycling thereof.
Background technology
In the preparation process of the epitaxial structure of existing luminescent device, by disposable growth substrates use, or it is directly formed to product as the substrate of epitaxial structure, or will after its wear down, form product with epitaxial structure.Growth substrates is mostly as the part of epitaxial structure product.
The reddish yellow light epitaxial structure growth substrates using is at present GaAs, uses the epitaxial structure product of this growth substrates can contain arsenic.In the preparation process of epitaxial structure that uses this growth substrates, if applied growth substrates reduction process, in industrial wastewater, will contain GaAs particle, increase the pollution of industrial wastewater, improved the cost of pollutant discharge of enterprise and waste water treatment simultaneously.Etch stop layer corrosion rate is wherein slow, and elimination is not thorough, need to increase the removing technique of follow-up complexity.
In the present invention, the recycling of growth substrates makes it have obvious technical advance and good economic benefit.
Summary of the invention
The present invention proposes a kind of method of substrate and recycling thereof, has solved growth substrates in prior art and cannot reuse the problem that makes cost increase, cause environmental pollution.
Technical scheme of the present invention is achieved in that a kind of substrate that can recycling, comprising: growth substrates and preset conversion layer, described preset conversion layer can be converted to reflective by described growth substrates.
Further, growth substrates forms described preset conversion layer by extensional mode, and described preset conversion layer forms functional layer by extensional mode.
Further, functional layer forms adhesive layer by adhesion mode, the attached support substrates of described adhesive layer; Or described functional layer by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.
Further, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
Further, bonding medium is photoresist, and described photoresist is specially organic gel medium.
Further, preset conversion layer can be corroded liquid selectivity eliminate, described corrosive liquid is specially HF or BOE.
Further, growth substrates comprises GaAs.
Further, described preset conversion layer comprises AlAs.
Further, described functional layer comprises epitaxial loayer N district, active area and epitaxial loayer P district; Described reflective comprises dielectric layer, silver mirror and copper substrate, and described dielectric layer comprises SiO
2, ITO or Si
3n
4, described copper substrate thickness range is 70 μ m～150 μ m.
Substrate carries out a method for recycling, comprises the following steps:
A) described growth substrates successively epitaxial growth form described preset conversion layer and described functional layer;
B) utilize corrosive liquid selectivity to eliminate described preset conversion layer;
C) after the described growth substrates process surface treatment step of step b) gained, recycle;
D) after the described functional layer process surface treatment step of step b) gained, prepare dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.
Further, a kind of substrate carries out the method for recycling, comprises the following steps:
A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;
B) described functional layer forms adhesive layer, the attached support substrates of described adhesive layer by the mode adhering to; Or described functional layer by bonding medium in conjunction with described support substrates;
C) utilize corrosive liquid selectivity to eliminate described preset conversion layer;
D) through step C) the described growth substrates of gained is through after surface treatment step, recycles;
E) through step C) the described functional layer of gained is through after surface treatment step, prepares dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepares copper substrate by plating mode.
Further, described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially described corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
Further, described step e) perform step afterwards G), described step G) eliminate described adhesive layer or described bonding medium by organic solvent dissolution method, remove described support substrates simultaneously; Described step G) in the temperature range of 50 ℃～100 ℃, carry out.
Further, described step B) complete after, be heated to 90 ℃～120 ℃ and maintain 10min～30min.
Beneficial effect of the present invention is:
1) growth substrates can reuse, and saves cost;
2) As of growth substrates can not bring subsequent technique flow process prepared by luminescent device into, reduces the pollution control cost of industrial wastewater;
3) reflective has good heat dispersion.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation that prior art growth substrates is peeled off epitaxial wafer;
Fig. 2 is the structural representation of growth substrates recycling of the present invention;
Fig. 3 is the schematic flow sheet of an embodiment of growth substrates recycling method of the present invention;
Fig. 4 is the schematic flow sheet of another embodiment of growth substrates recycling method of the present invention;
Fig. 5 is that Fig. 4 performs step B) after structural representation;
Fig. 6 is that Fig. 4 performs step C) after structural representation;
Fig. 7 for execution step d) or step G) after structural representation.
In figure:
1, growth substrates; 2-1, etch stop layer; 2-2, preset conversion layer; 3, epitaxial loayer N district; 4, active area; 5, epitaxial loayer P district; 6, bonding medium; 7, support substrates; 8, dielectric layer; 9, silver mirror; 10, copper substrate.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 2 and Figure 7, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to reflective by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate, corrosive liquid is specially BOE.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises SiO
2, copper substrate 10 thickness are 120 μ m.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts BOE optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.
Embodiment 2
As shown in Fig. 2 and Fig. 5～7, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to reflective by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.Functional layer forms adhesive layer by adhesion mode, the attached support substrates 7 of adhesive layer.Support substrates 7 is specially Sapphire Substrate.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate, corrosive liquid is specially HF.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises ITO, and copper substrate 10 thickness are 100 μ m.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts HF optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.Embodiment 3
As shown in Fig. 2 and Fig. 5～7, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to reflective by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.Functional layer is by bonding medium 6 in conjunction with support substrates 7, and support substrates 7 is specially quartz substrate.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate, corrosive liquid is specially HF.Bonding medium 6 resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.Bonding medium 6 is photoresist, and photoresist is specially organic gel medium.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises Si
3n
4, copper substrate 10 thickness are 70 μ m.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts HF optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.Embodiment 4
As shown in Fig. 2 and Fig. 5～7, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to reflective by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.Functional layer is by bonding medium 6 in conjunction with support substrates 7, and support substrates 7 is specially silicon substrate.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate, corrosive liquid is specially BOE.Bonding medium 6 resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.Bonding medium 6 is photoresist, and photoresist is specially organic gel medium.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises SiO
2, ITO or Si
3n
4, copper substrate 10 thickness are 150 μ m.
The situation of utilizing etch stop layer 2-1 to peel off with respect to the existing growth substrates shown in Fig. 1, in the present invention, preset conversion layer 2-2 adopts BOE optionally to corrode elimination, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.
As shown in Fig. 2, Fig. 3 and Fig. 7, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2;
C) after the growth substrates 1 process surface treatment step of step b) gained, recycle;
D) after the functional layer process surface treatment step of step b) gained, prepare dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepare copper substrate 10 by plating mode.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises SiO
2.
Step b) has realized peeling off of growth substrates 1, and step d) has realized the combination of reflective, has realized recycling of growth substrates 1 by above step.
As shown in Fig. 2, Fig. 3 and Fig. 7, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2;
C) after the growth substrates 1 process surface treatment step of step b) gained, recycle;
D) after the functional layer process surface treatment step of step b) gained, prepare dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepare copper substrate 10 by plating mode.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises ITO or Si
3n
4.
Step b) has realized peeling off of growth substrates 1, and step d) has realized the combination of reflective, has realized recycling of growth substrates 1 by above step.
Surface treatment step comprises detecting step and cleaning step; Cleaning step is specially corrosive liquid cleaning or water cleans; Detecting step is specially smoothness detection and surface cleanness detects.
As shown in Fig. 2 and Fig. 4～6, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer forms adhesive layer, the attached support substrates 7 of adhesive layer by the mode adhering to; Or functional layer is passed through bonding medium 6 in conjunction with support substrates 7;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2;
D) through step C) growth substrates of gained 1 is through after surface treatment step, recycles;
E) through step C) functional layer of gained is through after surface treatment step, prepares dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepares copper substrate 10 by plating mode.
Wherein, bonding medium 6 can be delustered resist dissolve, the resist of delustering is specially acetone.Bonding medium 6 is photoresist, and photoresist is specially organic gel medium.Growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises ITO.
Wherein, cleaning step before surface treatment step comprises polishing step, detecting step and is positioned at polishing step and afterwards, polishing step is specially chemical polishing; Cleaning step is specially corrosive liquid and cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Wherein, step B) complete after, be heated to 90 ℃ and maintain 30min.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the combination of reflective, realize recycling of growth substrates 1 by above step.
As shown in Fig. 2 and Fig. 4～7, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer forms adhesive layer, the attached support substrates 7 of adhesive layer by the mode adhering to;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2;
D) through step C) growth substrates of gained 1 is through after surface treatment step, recycles;
E) through step C) functional layer of gained is through after surface treatment step, prepares dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepares copper substrate 10 by plating mode;
G) eliminate adhesive layer by organic solvent dissolution method, remove support substrates 7 simultaneously.
Wherein, step G) at the temperature of 80 ℃, carry out.
Wherein, step B) complete after, be heated to 120 ℃ and maintain 10min.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises SiO
2.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of reflective, realize recycling of growth substrates 1 by above step.
Embodiment 9
As shown in Fig. 2 and Fig. 4～7, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer forms adhesive layer, the attached support substrates 7 of adhesive layer by the mode adhering to;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2;
D) through step C) growth substrates of gained 1 is through after surface treatment step, recycles;
E) through step C) functional layer of gained is through after surface treatment step, prepares dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepares copper substrate 10 by plating mode;
G) eliminate adhesive layer by organic solvent dissolution method, remove support substrates 7 simultaneously.
Wherein, step G) at the temperature of 50 ℃, carry out.
Wherein, step B) complete after, be heated to 110 ℃ and maintain 15min.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and dielectric layer 8 comprises SiO
2.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of reflective, realize recycling of growth substrates 1 by above step.
Cleaning step before surface treatment step comprises polishing step, detecting step and is positioned at polishing step and afterwards, polishing step is specially mechanical polishing; The cleaning step person of being specially water cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Embodiment 10
As shown in Fig. 2 and Fig. 4～7, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer is passed through bonding medium 6 in conjunction with support substrates 7;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2;
D) through step C) growth substrates of gained 1 is through after surface treatment step, recycles;
E) through step C) functional layer of gained is through after surface treatment step, prepares dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepares copper substrate 10 by plating mode;
G) eliminate bonding medium 6 by organic solvent dissolution method, remove support substrates 7 simultaneously.
Wherein, step G) at the temperature of 100 ℃, carry out.
Wherein, step B) complete after, be heated to 100 ℃ and maintain 20min.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of reflective, realize recycling of growth substrates 1 by above step.
In above embodiment, preset conversion layer 2-2 has 100,000 times of above selective corrosions to HF or BOE corrosive liquid, and due to the Etching effect of preset conversion layer 2-2, the preset conversion layer 2-2 liquid that is corroded melts, and functional layer is just peeled off with growth substrates 1.Growth substrates 1 after peeling off, after cleaning, detection or polishing, can reuse.
The functional layer that above embodiment relates to is by bonding medium 6 and support substrates 7 combinations, this operation object is the combination that makes two-part structure unit, when concrete enforcement, can be bonding mode, can be also bonding mode, and other can realize mode or the technological means of binding purpose.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (14)
1. a substrate that can recycling, is characterized in that, comprising:
Growth substrates;
Preset conversion layer;
Described preset conversion layer can be converted to reflective by described growth substrates.
2. a kind of substrate that can recycling according to claim 1, is characterized in that, described growth substrates forms described preset conversion layer by extensional mode, and described preset conversion layer forms functional layer by extensional mode.
3. a kind of substrate that can recycling according to claim 2, is characterized in that, described functional layer forms adhesive layer by adhesion mode, the attached support substrates of described adhesive layer; Or described functional layer by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.
4. a kind of substrate that can recycling according to claim 3, is characterized in that, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
5. a kind of substrate that can recycling according to claim 4, is characterized in that, described bonding medium is photoresist, and described photoresist is specially organic gel medium.
6. a kind of substrate that can recycling according to claim 1, is characterized in that, the described preset conversion layer liquid selectivity that can be corroded is eliminated; Described corrosive liquid is specially HF or BOE.
7. according to a kind of substrate that can recycling described in claim 1～6 any one, it is characterized in that, described growth substrates comprises GaAs.
8. according to a kind of substrate that can recycling described in claim 1～6 any one, it is characterized in that, described preset conversion layer comprises AlAs.
9. according to a kind of substrate that can recycling described in claim 2～6 any one, it is characterized in that, described functional layer comprises epitaxial loayer N district, active area and epitaxial loayer P district; Described reflective comprises dielectric layer, silver mirror and copper substrate, and described dielectric layer comprises SiO
2, ITO or Si
3n
4, described copper substrate thickness range is 70 μ m～150 μ m.
10. substrate claimed in claim 2 carries out a method for recycling, it is characterized in that, comprises the following steps:
A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;
B) utilize corrosive liquid selectivity to eliminate described preset conversion layer;
C) after the described growth substrates process surface treatment step of step b) gained, recycle;
D) after the described functional layer process surface treatment step of step b) gained, prepare dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.
11. 1 kinds of substrates claimed in claim 3 carry out the method for recycling, it is characterized in that, comprise the following steps:
A) described growth substrates successively epitaxial growth form described preset conversion layer and described functional layer;
B) described functional layer forms adhesive layer, the attached support substrates of described adhesive layer by the mode adhering to; Or described functional layer by bonding medium in conjunction with described support substrates;
C) utilize corrosive liquid selectivity to eliminate described preset conversion layer;
D) through step C) the described growth substrates of gained is through after surface treatment step, recycles;
E) through step C) the described functional layer of gained is through after surface treatment step, prepares dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepares copper substrate by plating mode.
12. methods of carrying out recycling according to a kind of substrate described in claim 10 or 11, it is characterized in that, described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially described corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
The method that 13. a kind of substrates according to claim 11 carry out recycling, it is characterized in that, described step e) perform step afterwards G), described step G) eliminate described adhesive layer or described bonding medium by organic solvent dissolution method, remove described support substrates simultaneously; Described step G) in the temperature range of 50 ℃～100 ℃, carry out.
The method that 14. a kind of substrates according to claim 11 carry out recycling, is characterized in that described step B) complete after, be heated to 90 ℃～120 ℃ and maintain 10min～30min.
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