CN103872196A - Substrate and recycling and reusing method thereof - Google Patents
Substrate and recycling and reusing method thereof Download PDFInfo
- Publication number
- CN103872196A CN103872196A CN201410050755.2A CN201410050755A CN103872196A CN 103872196 A CN103872196 A CN 103872196A CN 201410050755 A CN201410050755 A CN 201410050755A CN 103872196 A CN103872196 A CN 103872196A
- Authority
- CN
- China
- Prior art keywords
- substrates
- substrate
- recycling
- preset conversion
- functional layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a substrate and a recycling and reusing method thereof. The substrate capable of being recycled and reused comprises a growing substrate and a preset conversion layer, wherein the preset conversion layer is capable of converting the growing substrate into a transparent substrate. The substrate recycling and reusing method comprises the following steps of sequentially epitaxially growing the preset conversion layer and a function layer on the growing substrate; selectively eliminating the preset conversion layer with corrosive liquid; separating the function layer in a tractive method; the remained growing substrate after being separated is reused after being subjected to surface treatment. The growing substrate can be recycled, so that the cost is reduced; As of the growing substrate cannot be brought into the subsequent process procedure, so that the pollution abatement cost of industrial waste water is reduced, and the substrate is enabled to have obvious technical advancement and excellent economic benefit.
Description
Technical field
The present invention relates to LED field, refer to especially a kind of method of substrate and recycling thereof.
Background technology
In the preparation process of the epitaxial structure of existing luminescent device, by disposable growth substrates use, or it is directly formed to product as the substrate of epitaxial structure, or will after its wear down, form product with epitaxial structure.Growth substrates is mostly as the part of epitaxial structure product.
The conventional reddish yellow light epitaxial structure growth substrates using is GaAs at present, uses the epitaxial structure product of this growth substrates can contain arsenic.In the preparation process of epitaxial structure that uses this growth substrates, if applied growth substrates reduction process, in industrial wastewater, will contain GaAs particle, increase the pollution of industrial wastewater, improved the cost of pollutant discharge of enterprise and waste water treatment simultaneously.
In the present invention, the recycling of growth substrates makes it have obvious technical advance and good economic benefit.
Summary of the invention
The present invention proposes a kind of method of substrate and recycling thereof, has solved growth substrates in prior art and cannot reuse the problem that makes cost increase, cause environmental pollution.
Technical scheme of the present invention is achieved in that a kind of substrate that can recycling, comprising: growth substrates and preset conversion layer, described preset conversion layer can be converted to transparent substrates by described growth substrates.
Further, growth substrates forms described preset conversion layer by extensional mode, and described preset conversion layer forms functional layer by extensional mode.
Further, functional layer forms adhesive layer by adhesion mode, the attached support substrates of described adhesive layer; Or described functional layer is passed through the first bonding medium in conjunction with described support substrates; Described support substrates is specially Sapphire Substrate or quartz substrate.
Further, described functional layer is combined with described transparent substrates by the second bonding medium; Described the first bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
Further, the first bonding medium is photoresist, and described photoresist is specially organic gel; Described the second bonding medium is specially SiO
2, ITO or Si
3n
4.
Further, preset conversion layer can be corroded liquid selectivity eliminate, described corrosive liquid is specially HF or BOE.
Further, growth substrates comprises GaAs.
Further, described preset conversion layer comprises AlAs.
Further, described functional layer comprises epitaxial loayer N district, active area and epitaxial loayer P district; Described transparent substrates is specially Sapphire Substrate or quartz substrate.
Substrate carries out a method for recycling, comprises the following steps:
A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;
B) utilize corrosive liquid selectivity to eliminate described preset conversion layer, separate described functional layer by the mode of traction simultaneously;
C) separate rear remaining described growth substrates through after surface treatment step, recycle;
D) the described functional layer obtaining after separating is through after surface treatment step, by the second bonding medium in conjunction with described transparent substrates.
Further, a kind of substrate carries out the method for recycling, comprises the following steps:
A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;
B) described functional layer forms adhesive layer, the attached support substrates of described adhesive layer by the mode adhering to; Or described functional layer is passed through the first bonding medium in conjunction with described support substrates;
C) utilize corrosive liquid selectivity to eliminate described preset conversion layer, simultaneously by functional layer, described support substrates and described adhesive layer described in the mode overall separation of traction, or described the first bonding medium;
D) separate rear remaining described growth substrates through after surface treatment step, recycle;
E) the described functional layer obtaining after overall separation is through after surface treatment step, by the second bonding medium in conjunction with described transparent substrates.
Further, described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially described corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
Further, described step e) perform step afterwards F), described step F) eliminate described adhesive layer or described the first bonding medium by organic solvent dissolution method, remove described support substrates simultaneously; Described step F) in the temperature range of 50 ℃～100 ℃, carry out.
Further, in the pressure range in the temperature range of 18 ℃～110 ℃, at 450kPa～1500kPa, carry out described step e) binding operation.
Beneficial effect of the present invention is:
1) growth substrates can reuse, and saves cost;
2) As of growth substrates can not bring subsequent technique flow process prepared by luminescent device into, reduces the pollution control cost of industrial wastewater.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation that prior art growth substrates is peeled off epitaxial wafer;
Fig. 2 is the structural representation of growth substrates recycling of the present invention;
Fig. 3 is the schematic flow sheet of an embodiment of growth substrates recycling method of the present invention;
Fig. 4 is the schematic flow sheet of another embodiment of growth substrates recycling method of the present invention;
Fig. 5 is that Fig. 4 performs step B) after structural representation;
Fig. 6 is that Fig. 4 performs step C) after structural representation;
Fig. 7 is that Fig. 4 performs step D) after structural representation;
Fig. 8 for execution step d) or step F) after structural representation.
In figure:
1, growth substrates; 2-1, etch stop layer; 2-2, preset conversion layer; 3, epitaxial loayer N district; 4, active area; 5, epitaxial loayer P district; 6, the first bonding medium; 7, support substrates; 8, transparent substrates; 9, the second bonding medium.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 2 and Figure 8, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.
The preset conversion layer 2-2 liquid selectivity that can be corroded is eliminated, and functional layer is by the second bonding medium 9 and transparent substrates 8 combinations.Corrosive liquid is specially BOE.The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially Sapphire Substrate.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts BOE optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.
Embodiment 2
As shown in Fig. 2 and Fig. 5～8, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.Functional layer forms adhesive layer by adhesion mode, the attached support substrates 7 of adhesive layer.Support substrates 7 is specially Sapphire Substrate.
The preset conversion layer 2-2 liquid selectivity that can be corroded is eliminated, and functional layer is by the second bonding medium 9 and transparent substrates 8 combinations.Corrosive liquid is specially HF.The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts HF optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.
As shown in Fig. 2 and Fig. 5～8, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.Functional layer is by the first bonding medium 6 in conjunction with support substrates 7, and support substrates 7 is specially quartz substrate.
The preset conversion layer 2-2 liquid selectivity that can be corroded is eliminated, and functional layer is by the second bonding medium 9 and transparent substrates 8 combinations.Corrosive liquid is specially HF.The first bonding medium 6 resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.The first bonding medium 6 is photoresist, and photoresist is specially organic gel; The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate.
Utilize the situation of peeling off of etch stop layer 2-1 with respect to the existing growth substrates shown in Fig. 1, the present invention adopts HF optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.
As shown in Fig. 2 and Fig. 5～8, a kind of substrate that can recycling of the present invention, comprising: growth substrates 1 and preset conversion layer 2-2, preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.Growth substrates 1 forms preset conversion layer 2-2 by extensional mode, and preset conversion layer 2-2 forms functional layer by extensional mode.Functional layer is by the first bonding medium 6 in conjunction with support substrates 7, and support substrates 7 is specially Sapphire Substrate.
The preset conversion layer 2-2 liquid selectivity that can be corroded is eliminated, and functional layer is by the second bonding medium 9 and transparent substrates 8 combinations.Corrosive liquid is specially BOE.The first bonding medium 6 resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.The first bonding medium 6 is photoresist, and photoresist is specially organic gel; The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.
Wherein, growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially Sapphire Substrate.
The situation of utilizing etch stop layer 2-1 to peel off with respect to the existing growth substrates shown in Fig. 1, in the present invention, preset conversion layer 2-2 adopts BOE optionally to corrode elimination, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, and then avoided As in growth substrates 1 pollution to environment.
As shown in Fig. 2, Fig. 3 and Fig. 8, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2, simultaneously by the mode work of separation ergosphere of traction;
C) separate rear remaining growth substrates 1 through after surface treatment step, recycle;
D) functional layer obtaining after separating is through after surface treatment step, by the second bonding medium 9 in conjunction with transparent substrates 8.
Wherein, the second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.Growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate or Sapphire Substrate.
Step b) has realized peeling off of growth substrates 1, and step d) has realized the bonding of transparent substrates 8, has realized recycling of growth substrates 1 by above step.
As shown in Fig. 2, Fig. 3 and Fig. 8, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2, simultaneously by the mode work of separation ergosphere of traction;
C) separate rear remaining growth substrates 1 through after surface treatment step, recycle;
D) functional layer obtaining after separating is through after surface treatment step, by the second bonding medium 9 in conjunction with transparent substrates 8.
Wherein, the second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.Growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate or Sapphire Substrate.
Step b) has realized peeling off of growth substrates 1, and step d) has realized the bonding of transparent substrates 8, has realized recycling of growth substrates 1 by above step.
Surface treatment step comprises detecting step and cleaning step; Cleaning step is specially corrosive liquid cleaning or water cleans; Detecting step is specially smoothness detection and surface cleanness detects.
As shown in Fig. 2 and Fig. 4～7, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer forms adhesive layer, the attached support substrates 7 of adhesive layer by the mode adhering to; Or functional layer is passed through the first bonding medium 6 in conjunction with support substrates 7;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2, simultaneously by mode overall separation functional layer, described support substrates 7 and the described adhesive layer of traction, or described the first bonding medium 6;
D) separate rear remaining growth substrates 1 through after surface treatment step, recycle;
E) functional layer that obtains after overall separation is through after surface treatment step, by the second bonding medium 9 in conjunction with transparent substrates 8.
Wherein, the first bonding medium 6 resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.The first bonding medium 6 is photoresist, and photoresist is specially organic gel; The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.Growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate or Sapphire Substrate.
Wherein, cleaning step before surface treatment step comprises polishing step, detecting step and is positioned at polishing step and afterwards, polishing step is specially chemical polishing or mechanical polishing; Cleaning step is specially corrosive liquid cleaning or water cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Wherein, execution step E) the temperature that is combined in 18 ℃ under, under 1000kPa pressure, operate.Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of transparent substrates 8, realize recycling of growth substrates 1 by above step.
As shown in Fig. 2 and Fig. 4～8, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer forms adhesive layer, the attached support substrates 7 of adhesive layer by the mode adhering to;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2, simultaneously by mode overall separation functional layer, adhesive layer and the support substrates 7 of traction;
D) separate rear remaining growth substrates 1 through after surface treatment step, recycle;
E) functional layer that obtains after overall separation is through after surface treatment step, by the second bonding medium 9 in conjunction with transparent substrates 8;
F) eliminate adhesive layer by organic solvent dissolution method, remove support substrates 7 simultaneously.
Wherein, step F) in the temperature range of 80 ℃, carry out.
Wherein, execution step E) the temperature that is combined in 70 ℃ under, under 750kPa pressure, operate.
Wherein, the second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.Growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate or Sapphire Substrate.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of transparent substrates 8, realize recycling of growth substrates 1 by above step.
As shown in Fig. 2 and Fig. 4～8, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer forms adhesive layer, the attached support substrates 7 of adhesive layer by the mode adhering to;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2, simultaneously by mode overall separation functional layer, adhesive layer and the support substrates 7 of traction;
D) separate rear remaining growth substrates 1 through after surface treatment step, recycle;
E) functional layer that obtains after overall separation is through after surface treatment step, by the second bonding medium 9 in conjunction with transparent substrates 8;
F) eliminate adhesive layer by organic solvent dissolution method, remove support substrates 7 simultaneously.
Wherein, step F) in the temperature range of 50 ℃, carry out.
Wherein, execution step E) the temperature that is combined in 110 ℃ under, under 450kPa pressure, operate.
Wherein, the second bonding medium 9 is specially SiO
2, ITO or Si
3n
4.Growth substrates 1 comprises GaAs, and preset conversion layer 2-2 comprises AlAs.Functional layer comprises epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5; Transparent substrates 8 is specially quartz substrate or Sapphire Substrate.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of transparent substrates 8, realize recycling of growth substrates 1 by above step.
Cleaning step before surface treatment step comprises polishing step, detecting step and is positioned at polishing step and afterwards, polishing step is specially chemical polishing or mechanical polishing; Cleaning step is specially corrosive liquid cleaning or water cleans; Detecting step is specially smoothness detection and surface cleanness detects.
Embodiment 10
As shown in Fig. 2 and Fig. 4～8, the method that a kind of substrate of the present invention carries out recycling, comprises the following steps:
A) the growth substrates 1 preset conversion layer 2-2 of epitaxial growth and functional layer successively;
B) functional layer is passed through the first bonding medium 6 in conjunction with support substrates 7;
C) utilize corrosive liquid selectivity to eliminate preset conversion layer 2-2, simultaneously by mode overall separation functional layer, the first bonding medium 6 and the support substrates 7 of traction;
D) separate rear remaining growth substrates 1 through after surface treatment step, recycle;
E) functional layer that obtains after overall separation is through after surface treatment step, by the second bonding medium 9 in conjunction with transparent substrates 8;
F) eliminate the first bonding medium 6 by organic solvent dissolution method, remove support substrates 7 simultaneously.
Wherein, step F) at the temperature of 100 ℃, carry out.
Wherein, execution step E) the temperature that is combined in 50 ℃ under, under 1500kPa pressure, operate.
Step C) growth substrates 1 realized and having peeled off by support substrates 7, step e) realize the bonding of transparent substrates 8, realize recycling of growth substrates 1 by above step.
In above embodiment, preset conversion layer 2-2 has 100,000 times of above selective corrosions to HF or BOE corrosive liquid, and due to the Etching effect of preset conversion layer 2-2, the preset conversion layer 2-2 liquid that is corroded melts, and functional layer is just peeled off with growth substrates 1.Growth substrates 1 after peeling off, after cleaning, detection or polishing, can reuse.
The functional layer that above embodiment relates to is passed through the first bonding medium 6 with support substrates 7 combinations, by the second bonding medium 9 and transparent substrates 8 combinations, this operation object is the combination that makes two-part structure unit, when concrete enforcement, it can be bonding mode, also can be bonding mode, and other can realize mode or the technological means of binding purpose.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (14)
1. a substrate that can recycling, is characterized in that, comprising:
Growth substrates;
Preset conversion layer;
Described preset conversion layer can be converted to transparent substrates by described growth substrates.
2. a kind of substrate that can recycling according to claim 1, is characterized in that, described growth substrates forms described preset conversion layer by extensional mode, and described preset conversion layer forms functional layer by extensional mode.
3. a kind of substrate that can recycling according to claim 2, is characterized in that, described functional layer forms adhesive layer by adhesion mode, the attached support substrates of described adhesive layer; Or described functional layer is passed through the first bonding medium in conjunction with described support substrates; Described support substrates is specially Sapphire Substrate or quartz substrate.
4. a kind of substrate that can recycling according to claim 3, is characterized in that, described functional layer is combined with described transparent substrates by the second bonding medium; Described the first bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
5. a kind of substrate that can recycling according to claim 4, is characterized in that, described the first bonding medium is photoresist, and described photoresist is specially organic gel; Described the second bonding medium is specially SiO
2, ITO or Si
3n
4.
6. a kind of substrate that can recycling according to claim 1, is characterized in that, the described preset conversion layer liquid selectivity that can be corroded is eliminated; Described corrosive liquid is specially HF or BOE.
7. according to a kind of substrate that can recycling described in claim 1～6 any one, it is characterized in that, described growth substrates comprises GaAs.
8. according to a kind of substrate that can recycling described in claim 1～6 any one, it is characterized in that, described preset conversion layer comprises AlAs.
9. according to a kind of substrate that can recycling described in claim 2～6 any one, it is characterized in that, described functional layer comprises epitaxial loayer N district, active area and epitaxial loayer P district; Described transparent substrates is specially Sapphire Substrate or quartz substrate.
10. substrate claimed in claim 2 carries out a method for recycling, it is characterized in that, comprises the following steps:
A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;
B) utilize corrosive liquid selectivity to eliminate described preset conversion layer, separate described functional layer by the mode of traction simultaneously;
C) separate rear remaining described growth substrates through after surface treatment step, recycle;
D) the described functional layer obtaining after separating is through after surface treatment step, by the second bonding medium in conjunction with described transparent substrates.
11. 1 kinds of substrates claimed in claim 3 carry out the method for recycling, it is characterized in that, comprise the following steps:
A) described growth substrates preset conversion layer and described functional layer described in epitaxial growth successively;
B) described functional layer forms adhesive layer, the attached support substrates of described adhesive layer by the mode adhering to; Or described functional layer is passed through the first bonding medium in conjunction with described support substrates;
C) utilize corrosive liquid selectivity to eliminate described preset conversion layer, simultaneously by functional layer, described support substrates and described adhesive layer described in the mode overall separation of traction, or described the first bonding medium;
D) separate rear remaining described growth substrates through after surface treatment step, recycle;
E) the described functional layer obtaining after overall separation is through after surface treatment step, by the second bonding medium in conjunction with described transparent substrates.
12. methods of carrying out recycling according to a kind of substrate described in claim 10 or 11, it is characterized in that, described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially described corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
The method that 13. a kind of substrates according to claim 11 carry out recycling, it is characterized in that, described step e) perform step afterwards F), described step F) eliminate described adhesive layer or described the first bonding medium by organic solvent dissolution method, remove described support substrates simultaneously; Described step F) in the temperature range of 50 ℃～100 ℃, carry out.
The method that 14. a kind of substrates according to claim 11 carry out recycling, is characterized in that, in the pressure range in the temperature range of 18 ℃～110 ℃, at 450kPa～1500kPa, carries out described step e) binding operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410050755.2A CN103872196A (en) | 2014-02-13 | 2014-02-13 | Substrate and recycling and reusing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410050755.2A CN103872196A (en) | 2014-02-13 | 2014-02-13 | Substrate and recycling and reusing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103872196A true CN103872196A (en) | 2014-06-18 |
Family
ID=50910536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410050755.2A Pending CN103872196A (en) | 2014-02-13 | 2014-02-13 | Substrate and recycling and reusing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103872196A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1667849A (en) * | 2004-03-10 | 2005-09-14 | 信越半导体株式会社 | Light emitting element and manufacturing method thereof |
-
2014
- 2014-02-13 CN CN201410050755.2A patent/CN103872196A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1667849A (en) * | 2004-03-10 | 2005-09-14 | 信越半导体株式会社 | Light emitting element and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102593285B (en) | Method for recovering pattern sapphire substrate | |
| RU2012108624A (en) | METHODS FOR PERFECTION AND TRANSFER OF HETEROEPITAXIALLY GROWED GRAPHENE FILMS AND PRODUCTS INCLUDING THESE FILMS | |
| WO2011056783A3 (en) | Etching process for semiconductors | |
| US20040106225A1 (en) | Light emitting diode having an adhesive layer and a manufacturing method thereof | |
| WO2011005356A3 (en) | Surface cleaning and recycling apparatus and method | |
| KR20130003997A (en) | Separation-combination method of carrier substrate and slim glass | |
| CN102544264A (en) | Method for preparing nano pattern on sapphire substrate | |
| TW200745785A (en) | Recycling method for resist stripper scrapped and recycling device for the same | |
| CN103872196A (en) | Substrate and recycling and reusing method thereof | |
| TWI679068B (en) | Recovery method of solar cell module (2) | |
| TW200633923A (en) | Method for releasing a micromechanical structure | |
| WO2006012174A3 (en) | System and method of cleaning and etching a substrate | |
| US20130109108A1 (en) | Method for producing zinc oxide on gallium nitride and application thereof | |
| CN103811616A (en) | Method for manufacturing arsenic-free luminescent device chip | |
| CN103811604A (en) | Luminescent device chip and manufacturing method thereof | |
| CN203733825U (en) | Light emitting device chip | |
| CN203774361U (en) | Recyclable substrate | |
| CN103779461A (en) | Substrate and method for recycling substrate | |
| CN203774362U (en) | Recyclable substrate | |
| CN203733826U (en) | Light emitting device chip | |
| CN102436154A (en) | Photoresist stripping method in repairing process of TFT (thin film transistor) liquid crystal display | |
| CN105280540A (en) | Carrier base plate and substrate base plate attaching method and manufacturing method of display panel | |
| KR101327958B1 (en) | Recovery method of indium tin oxide and other valuable resources from liquid crystal device and indium tin oxide manufactured therefrom | |
| CN103811599A (en) | Method of improving luminous efficiency of semiconductor laser chip | |
| CN103779460A (en) | Light emitting device chip and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140618 |