CN203733825U - Light emitting device chip - Google Patents
Light emitting device chip Download PDFInfo
- Publication number
- CN203733825U CN203733825U CN201420064017.9U CN201420064017U CN203733825U CN 203733825 U CN203733825 U CN 203733825U CN 201420064017 U CN201420064017 U CN 201420064017U CN 203733825 U CN203733825 U CN 203733825U
- Authority
- CN
- China
- Prior art keywords
- device chip
- substrates
- luminescent device
- epitaxial loayer
- district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000758 substrate Substances 0.000 claims abstract description 102
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000010410 layer Substances 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000010842 industrial wastewater Substances 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 5
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Abstract
The utility model provides a light emitting device chip. The light emitting device chip sequentially comprises a transparent substrate, an epitaxial layer N zone, an N-face electrode, an active zone, an epitaxial layer P zone and a P-face electrode from down to up, wherein the transparent substrate is bonded with the epitaxial layer N zone through a second bonding medium, and the transparent substrate is formed through a conversion mode of a growth substrate. According to the light emitting device chip, As of the growth substrate can not be brought to a subsequent technology flow for preparation of the light emitting device, pollution treatment cost of industrial wastewater is reduced; the transparent substrate has no light absorption performance, light emitting loss is reduced, integral light emitting efficiency of the light emitting device chip is improved; the growth substrate can be reutilized repeatedly, production cost is reduced, and the light emitting device chip has obvious technology advancement and good economic benefits.
Description
Technical field
The utility model relates to LED field, refers to especially a kind of luminescent device chip.
Background technology
In the preparation process of the chip of existing luminescent device, by disposable growth substrates use, or it is directly formed to product as the substrate of chip, or will after its wear down, form product with chip.Growth substrates is mostly as the part of chip product.
The reddish yellow optical chip growth substrates using is at present GaAs, uses the chip product of this growth substrates can contain arsenic.In the preparation process of chip that uses this growth substrates, if applied growth substrates reduction process, in industrial wastewater, will contain GaAs particle, increase the pollution of industrial wastewater, improved the cost of pollutant discharge of enterprise and waste water treatment simultaneously.And, because GaAs is non-transparent material, will affect the light extraction efficiency of the chip that this type of chip forms.The etch stop layer corrosion rate wherein adopting is slow, and elimination is not thorough, need to increase the removing technique of follow-up complexity.
Utility model content
The utility model proposes a kind of luminescent device chip, solved the impact of growth substrates on luminescent device chip light-emitting efficiency and the problem of environmental pollution bringing thereof in prior art.
The technical solution of the utility model is achieved in that a kind of luminescent device chip, comprise: be followed successively by transparent substrates, epitaxial loayer N district, N face electrode, active area, epitaxial loayer P district and p side electrode from bottom to top, described transparent substrates is combined with described epitaxial loayer N layer by the second bonding medium, and described transparent substrates forms by the conversion regime of growth substrates.
Further, described growth substrates comprises preset conversion layer; Described preset conversion layer can be converted to described transparent substrates by described growth substrates.
Further, described preset conversion layer forms described epitaxial loayer N district, described active area and described epitaxial loayer P district from bottom to top successively by epitaxial growth mode; Described N face electrode and described p side electrode pass through photoetching, evaporation and peel off and make, or pass through evaporation, photoetching and be etched into.
Preferably, also comprise support substrates; Described epitaxial loayer P district forms adhesive layer by adhesion mode, the attached described support substrates of described adhesive layer; Or described epitaxial loayer P district passes through the first bonding medium in conjunction with described support substrates; Described support substrates and described transparent substrates are specially Sapphire Substrate or quartz substrate.
Further, described the first bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
Preferably, described the first bonding medium is photoresist, and described photoresist is specially organic gel medium; Described the second bonding medium is specially SiO
2, ITO or Si
3n
4medium.
Further, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
Preferably, described growth substrates comprises GaAs; Described preset conversion layer comprises AlAs.
Further, growth substrates can recycle through surface treatment.
The beneficial effects of the utility model are:
1, the As of growth substrates can not bring subsequent technique flow process prepared by luminescent device into, reduces the pollution control cost of industrial wastewater, reduces production costs;
2, transparent substrates does not have absorbability to light, can reduce luminous loss, increases the overall light extraction efficiency of luminescent device chip.
Brief description of the drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the conventional substrate epitaxial chip architecture of prior art schematic diagram;
Fig. 2 is the utility model structural representation with preset conversion layer;
Fig. 3 is the utility model structural representation with support substrates;
Fig. 4 is the utility model structural representation.
In figure:
1, growth substrates; 2-1, etch stop layer; 2-2, preset conversion layer; 3, epitaxial loayer N district; 4, active area; 5, epitaxial loayer P district; 6, the first bonding medium; 7, support substrates; 8, transparent substrates; 9, the second bonding medium; 10, P electrode; 11, N electrode.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
Embodiment 1
As shown in Figure 2 and Figure 4, a kind of luminescent device chip of the utility model, comprise: be followed successively by transparent substrates 8, epitaxial loayer N district 3, N face electrode 11, active area 4, epitaxial loayer P district 5 and p side electrode 10 from bottom to top, transparent substrates 8 is by the second bonding medium 9 and 3 combination of epitaxial loayer N layer, and transparent substrates 8 forms by the conversion regime of growth substrates 1.Growth substrates 1 comprises preset conversion layer; Preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; N face electrode 11 and p side electrode 10 pass through photoetching, evaporations and peel off and make, or pass through evaporation, photoetching and be etched into.
The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4medium.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially HF.Growth substrates 1 can recycle through surface treatment.
Adopt the situation of etch stop layer 2-1 with respect to the existing luminescent device chip shown in Fig. 1, the utility model adopts can optionally be corroded by HF the preset conversion layer 2-2 of elimination, make the growth substrates 1 can recycling, the As of growth substrates 1 can not bring subsequent technique flow process prepared by luminescent device into, reduce production cost, utilized transparent substrates 8 to increase the overall light extraction efficiency of luminescent device chip simultaneously.
Embodiment 2
As shown in Fig. 2～4, a kind of luminescent device chip of the utility model, comprise: be followed successively by transparent substrates 8, epitaxial loayer N district 3, N face electrode 11, active area 4, epitaxial loayer P district 5 and p side electrode 10 from bottom to top, transparent substrates 8 is by the second bonding medium 9 and 3 combination of epitaxial loayer N layer, and transparent substrates 8 forms by the conversion regime of growth substrates 1.Growth substrates 1 comprises preset conversion layer; Preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; N face electrode 11 and p side electrode 10 pass through photoetching, evaporations and peel off and make, or pass through evaporation, photoetching and be etched into.
The utility model also comprises support substrates 7; Epitaxial loayer P district 5 forms adhesive layer by adhesion mode, the attached support substrates 7 of adhesive layer; Support substrates 7 and transparent substrates 8 are specially Sapphire Substrate.
The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4medium.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.Growth substrates 1 can recycle through surface treatment.
Adopt the situation of etch stop layer 2-1 with respect to the existing luminescent device chip shown in Fig. 1, the utility model adopts can optionally be corroded by BOE the preset conversion layer 2-2 of elimination, make the growth substrates 1 can recycling, the As of growth substrates 1 can not bring subsequent technique flow process prepared by luminescent device into, reduce production cost, utilized transparent substrates 8 to increase the overall light extraction efficiency of luminescent device chip simultaneously.
Embodiment 3
As shown in Fig. 2～4, a kind of luminescent device chip of the utility model, comprise: be followed successively by transparent substrates 8, epitaxial loayer N district 3, N face electrode 11, active area 4, epitaxial loayer P district 5 and p side electrode 10 from bottom to top, transparent substrates 8 is by the second bonding medium 9 and 3 combination of epitaxial loayer N layer, and transparent substrates 8 forms by the conversion regime of growth substrates 1.Growth substrates 1 comprises preset conversion layer; Preset conversion layer 2-2 can be converted to transparent substrates 8 by growth substrates 1.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; N face electrode 11 and p side electrode 10 pass through photoetching, evaporations and peel off and make, or pass through evaporation, photoetching and be etched into.
The utility model also comprises support substrates 7; Epitaxial loayer P district 5 passes through the first bonding medium 6 in conjunction with support substrates 7; Support substrates 7 and transparent substrates 8 are specially quartz substrate.
The first bonding medium 6 is photoresist, and photoresist is specially organic gel medium, and the resist of can being delustered is dissolved, and the resist of delustering is specially acetone.The second bonding medium 9 is specially SiO
2, ITO or Si
3n
4medium.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially HF.Growth substrates 1 can recycle through surface treatment.
Adopt the situation of etch stop layer 2-1 with respect to the existing luminescent device chip shown in Fig. 1, the utility model adopts can optionally be corroded by HF the preset conversion layer 2-2 of elimination, make the growth substrates 1 can recycling, the As of growth substrates 1 can not bring subsequent technique flow process prepared by luminescent device into, reduce production cost, utilized transparent substrates 8 to increase the overall light extraction efficiency of luminescent device chip simultaneously.
In above embodiment, preset conversion layer 2-2 has 100,000 times of above selective corrosions to HF or BOE corrosive liquid, and due to the Etching effect of preset conversion layer 2-2, the preset conversion layer 2-2 liquid that is corroded melts, and growth substrates 1 just can recycling.
The residual thickness of transparent substrates 8 depends on the chi of epitaxial wafer, relevant with its surface state, can affect the quality of follow-up cutting efficiency and final products, if blocked up, increase and draws sliver difficulty, if excessively thin, affects fragment rate and warpage situation.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (9)
1. a luminescent device chip, it is characterized in that, comprise: be followed successively by transparent substrates, epitaxial loayer N district, N face electrode, active area, epitaxial loayer P district and p side electrode from bottom to top, described transparent substrates is combined with described epitaxial loayer N layer by the second bonding medium, and described transparent substrates forms by the conversion regime of growth substrates.
2. a kind of luminescent device chip according to claim 1, is characterized in that, described growth substrates comprises preset conversion layer; Described preset conversion layer can be converted to described transparent substrates by described growth substrates.
3. a kind of luminescent device chip according to claim 2, is characterized in that, described preset conversion layer forms described epitaxial loayer N district, described active area and described epitaxial loayer P district from bottom to top successively by epitaxial growth mode; Described N face electrode and described p side electrode pass through photoetching, evaporation and peel off and make, or pass through evaporation, photoetching and be etched into.
4. a kind of luminescent device chip according to claim 3, is characterized in that, also comprises support substrates; Described epitaxial loayer P district forms adhesive layer by adhesion mode, the attached described support substrates of described adhesive layer; Or described epitaxial loayer P district passes through the first bonding medium in conjunction with described support substrates; Described support substrates and described transparent substrates are specially Sapphire Substrate or quartz substrate.
5. a kind of luminescent device chip according to claim 4, is characterized in that, described the first bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
6. a kind of luminescent device chip according to claim 5, is characterized in that, described the first bonding medium is photoresist, and described photoresist is specially organic gel medium; Described the second bonding medium is specially SiO
2, ITO or Si
3n
4medium.
7. a kind of luminescent device chip according to claim 2, is characterized in that, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
8. according to a kind of luminescent device chip described in claim 2～7 any one, it is characterized in that, described growth substrates comprises GaAs; Described preset conversion layer comprises AlAs.
9. a kind of luminescent device chip according to claim 8, is characterized in that, described growth substrates can recycle through surface treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420064017.9U CN203733825U (en) | 2014-02-13 | 2014-02-13 | Light emitting device chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420064017.9U CN203733825U (en) | 2014-02-13 | 2014-02-13 | Light emitting device chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203733825U true CN203733825U (en) | 2014-07-23 |
Family
ID=51203873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420064017.9U Expired - Lifetime CN203733825U (en) | 2014-02-13 | 2014-02-13 | Light emitting device chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203733825U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811604A (en) * | 2014-02-13 | 2014-05-21 | 北京太时芯光科技有限公司 | Luminescent device chip and manufacturing method thereof |
-
2014
- 2014-02-13 CN CN201420064017.9U patent/CN203733825U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811604A (en) * | 2014-02-13 | 2014-05-21 | 北京太时芯光科技有限公司 | Luminescent device chip and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180423 Address after: 243000 Ma'anshan City, Anhui Province, undertaking industrial transfer Demonstration Park (north of Longshan Road) Patentee after: MA'ANSHAN TAISHI XINGUANG TECHNOLOGY CO.,LTD. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone, No. 1, ground floor, North Street. Patentee before: Beijing Taishi Xinguang Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |
|
| CX01 | Expiry of patent term |