CN203733826U - Light emitting device chip - Google Patents
Light emitting device chip Download PDFInfo
- Publication number
- CN203733826U CN203733826U CN201420064903.1U CN201420064903U CN203733826U CN 203733826 U CN203733826 U CN 203733826U CN 201420064903 U CN201420064903 U CN 201420064903U CN 203733826 U CN203733826 U CN 203733826U
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- CN
- China
- Prior art keywords
- device chip
- district
- luminescent device
- epitaxial loayer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 57
- 238000001704 evaporation Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010842 industrial wastewater Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
The utility model provides a light emitting device chip. The light emitting device chip sequentially comprises a reflection substrate, an N electrode, an epitaxial layer N zone, an active zone, an epitaxial layer P zone and a P electrode from down to up, wherein the reflection substrate comprises a medium layer, a silver mirror and a copper substrate, and the reflection substrate is formed through a conversion mode of a growth substrate. According to the light emitting device chip, As of the growth substrate can not be brought to a subsequent technology flow for preparation of the light emitting device, and pollution treatment cost of industrial wastewater is reduced; the reflection substrate can improve heat radiation performance, moreover the growth substrate can be reutilized repeatedly, production cost is reduced, and the light emitting device chip is enabled to have advantages of obvious technology advancement and good economic benefits.
Description
Technical field
The utility model relates to LED field, refers to especially a kind of luminescent device chip.
Background technology
In the preparation process of the epitaxial structure of existing luminescent device, by disposable growth substrates use, or it is directly formed to product as the substrate of epitaxial structure, or will after its wear down, form product with epitaxial structure.Growth substrates is mostly as the part of epitaxial structure product.
The conventional reddish yellow light epitaxial structure growth substrates using is GaAs at present, uses the epitaxial structure product of this growth substrates can contain arsenic.In the preparation process of epitaxial structure that uses this growth substrates, if applied growth substrates reduction process, in industrial wastewater, will contain GaAs particle, increase the pollution of industrial wastewater, improved the cost of pollutant discharge of enterprise and waste water treatment simultaneously.And, because GaAs is non-transparent material, will affect the light extraction efficiency of the chip that this type of epitaxial structure forms.The etch stop layer corrosion rate wherein adopting is slow, and elimination is not thorough, need to increase the removing technique of follow-up complexity.
Utility model content
The utility model proposes a kind of luminescent device chip, solved impact on luminescent device chip cooling efficiency of growth substrates in prior art and the problem of environmental pollution bringing thereof.
The technical solution of the utility model is achieved in that a kind of luminescent device chip, comprise: be followed successively by reflective, N electrode, epitaxial loayer N district, active area, epitaxial loayer P district and P electrode from bottom to top, described reflective comprises dielectric layer, silver mirror and copper substrate, and described reflective forms by the conversion regime of growth substrates.
Further, described growth substrates comprises preset conversion layer; Described preset conversion layer can be converted to described reflective by described growth substrates; Described dielectric layer and described silver mirror are by deposition, photoetching, etching and evaporation preparation, and described copper substrate is prepared by plating mode, and described dielectric layer comprises SiO
2, ITO or Si
3n
4, described copper substrate thickness range is 70 μ m～150 μ m.
Further, described preset conversion layer forms described epitaxial loayer N district, described active area and described epitaxial loayer P district from bottom to top successively by epitaxial growth mode; Described P electrode passes through evaporation BeAu, annealing, photoetching and is etched into, and described N electrode passes through evaporation GeAu, photoetching and is etched into.
Preferably, also comprise support substrates; Described epitaxial loayer P district forms adhesive layer by adhesion mode, the attached described support substrates of described adhesive layer; Or described epitaxial loayer P district by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.
Further, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
Preferably, described bonding medium is photoresist, and described photoresist is specially organic gel medium.
Further, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
Further, described growth substrates comprises GaAs; Described preset conversion layer comprises AlAs.
The beneficial effects of the utility model are:
1) growth substrates can reuse, and saves cost;
2) As of growth substrates can not bring subsequent technique flow process prepared by luminescent device into, reduces the pollution control cost of industrial wastewater;
3) reflective has good heat dispersion, thereby improves the heat radiation situation of luminescent device chip.
Brief description of the drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is prior art luminescent device chip growth substrates structural representation;
Fig. 2 is the utility model structural representation with preset conversion layer;
Fig. 3 is the utility model structural representation with support substrates;
Fig. 4 is the utility model luminescent device chip schematic diagram.
In figure:
1, growth substrates; 2-1, etch stop layer; 2-2, preset conversion layer; 3, epitaxial loayer N district; 4, active area; 5, epitaxial loayer P district; 6, P electrode; 7, bonding medium; 8, support substrates; 9, N electrode; 10, dielectric layer; 11, silver mirror; 12, copper substrate.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
Embodiment 1
As shown in Figure 2 and Figure 4, a kind of luminescent device chip of the utility model, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.
Growth substrates 1 comprises preset conversion layer 2-2; Preset conversion layer 2-2 can be converted to reflective by growth substrates 1; Dielectric layer 10 and silver mirror 11 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 12 is prepared by plating mode, and dielectric layer 10 comprises SiO
2, copper substrate 12 thickness ranges are 70 μ m.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially HF.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
With respect to the situation of etch stop layer 2-1 in the existing growth substrates shown in Fig. 1, the utility model adopts HF optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, the pollution of the As that has simultaneously avoided growth substrates 1 in luminescent device chip manufacturing to environment.
Embodiment 2
As shown in Figure 2 and Figure 4, a kind of luminescent device chip of the utility model, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.
Growth substrates 1 comprises preset conversion layer 2-2; Preset conversion layer 2-2 can be converted to reflective by growth substrates 1; Dielectric layer 10 and silver mirror 11 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 12 is prepared by plating mode, and dielectric layer 10 comprises ITO, and copper substrate 12 thickness ranges are 150 μ m.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
With respect to the situation of etch stop layer 2-1 in the existing growth substrates shown in Fig. 1, the utility model adopts BOE optionally to corrode and eliminates preset conversion layer 2-2, eliminate thoroughly fully, make the growth substrates 1 can recycling, reduce its use cost, the pollution of the As that has simultaneously avoided growth substrates 1 in luminescent device chip manufacturing to environment.
Embodiment 3
As shown in Fig. 2～4, a kind of luminescent device chip of the utility model, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.The utility model also comprises support substrates 8; Epitaxial loayer P district 5 forms adhesive layer by adhesion mode, the attached support substrates 8 of adhesive layer; Support substrates 8 is specially silicon substrate.
Growth substrates 1 comprises preset conversion layer 2-2; Preset conversion layer 2-2 can be converted to reflective by growth substrates 1; Dielectric layer 10 and silver mirror 11 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 12 is prepared by plating mode, and dielectric layer 10 comprises Si
3n
4, copper substrate 12 thickness ranges are 120 μ m.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially HF.
Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.
Embodiment 4
As shown in Fig. 2～4, a kind of luminescent device chip of the utility model, comprise: be followed successively by reflective, N electrode 9, epitaxial loayer N district 3, active area 4, epitaxial loayer P district 5 and P electrode 6 from bottom to top, reflective comprises dielectric layer 10, silver mirror 11 and copper substrate 12, and reflective forms by the conversion regime of growth substrates 1.The utility model also comprises support substrates 8; Epitaxial loayer P district 5 passes through bonding medium 7 in conjunction with support substrates 8; Support substrates 8 is specially Sapphire Substrate or quartz substrate.
Growth substrates 1 comprises preset conversion layer 2-2; Preset conversion layer 2-2 can be converted to reflective by growth substrates 1; Dielectric layer 10 and silver mirror 11 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 12 is prepared by plating mode, and dielectric layer 10 comprises SiO
2, copper substrate 12 thickness ranges are 100 μ m.
Preset conversion layer 2-2 forms epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 from bottom to top successively by epitaxial growth mode; P electrode 6 passes through evaporation BeAu, annealing, photoetching and is etched into, and N electrode 9 passes through evaporation GeAu, photoetching and is etched into.
Preset conversion layer 2-2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.Growth substrates 1 comprises GaAs; Preset conversion layer 2-2 comprises AlAs.Bonding medium 7 can be delustered resist dissolve, the resist of delustering is specially acetone.Bonding medium 7 is photoresist, and photoresist is specially organic gel medium.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (8)
1. a luminescent device chip, it is characterized in that, comprise: be followed successively by reflective, N electrode, epitaxial loayer N district, active area, epitaxial loayer P district and P electrode from bottom to top, described reflective comprises dielectric layer, silver mirror and copper substrate, and described reflective forms by the conversion regime of growth substrates.
2. a kind of luminescent device chip according to claim 1, is characterized in that, described growth substrates comprises preset conversion layer; Described preset conversion layer can be converted to described reflective by described growth substrates; Described dielectric layer and described silver mirror are by deposition, photoetching, etching and evaporation preparation, and described copper substrate is prepared by plating mode, and described dielectric layer comprises SiO
2, ITO or Si
3n
4, described copper substrate thickness range is 70 μ m～150 μ m.
3. a kind of luminescent device chip according to claim 2, is characterized in that, described preset conversion layer forms described epitaxial loayer N district, described active area and described epitaxial loayer P district from bottom to top successively by epitaxial growth mode; Described P electrode passes through evaporation BeAu, annealing, photoetching and is etched into, and described N electrode passes through evaporation GeAu, photoetching and is etched into.
4. a kind of luminescent device chip according to claim 3, is characterized in that, also comprises support substrates; Described epitaxial loayer P district forms adhesive layer by adhesion mode, the attached described support substrates of described adhesive layer; Or described epitaxial loayer P district by bonding medium in conjunction with described support substrates; Described support substrates is specially silicon substrate, Sapphire Substrate or quartz substrate.
5. a kind of luminescent device chip according to claim 4, is characterized in that, the described bonding medium resist of can being delustered is dissolved, described in the resist of delustering be specially acetone.
6. a kind of luminescent device chip according to claim 5, is characterized in that, described bonding medium is photoresist, and described photoresist is specially organic gel medium.
7. a kind of luminescent device chip according to claim 2, is characterized in that, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
8. according to a kind of luminescent device chip described in claim 2～7 any one, it is characterized in that, described growth substrates comprises GaAs; Described preset conversion layer comprises AlAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420064903.1U CN203733826U (en) | 2014-02-13 | 2014-02-13 | Light emitting device chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420064903.1U CN203733826U (en) | 2014-02-13 | 2014-02-13 | Light emitting device chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203733826U true CN203733826U (en) | 2014-07-23 |
Family
ID=51203874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420064903.1U Expired - Lifetime CN203733826U (en) | 2014-02-13 | 2014-02-13 | Light emitting device chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203733826U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779460A (en) * | 2014-02-13 | 2014-05-07 | 马鞍山太时芯光科技有限公司 | Light emitting device chip and manufacturing method thereof |
-
2014
- 2014-02-13 CN CN201420064903.1U patent/CN203733826U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103779460A (en) * | 2014-02-13 | 2014-05-07 | 马鞍山太时芯光科技有限公司 | Light emitting device chip and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140723 |
|
| CX01 | Expiry of patent term |