CN103011181B - Stripping-transplanting method of silicon dioxide nanowire array - Google Patents
Stripping-transplanting method of silicon dioxide nanowire array Download PDFInfo
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- CN103011181B CN103011181B CN201210543709.7A CN201210543709A CN103011181B CN 103011181 B CN103011181 B CN 103011181B CN 201210543709 A CN201210543709 A CN 201210543709A CN 103011181 B CN103011181 B CN 103011181B
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Abstract
The invention discloses a stripping-transplanting method of a silicon dioxide nanowire array, which comprises the following steps: preparing a porous silver film on a silicon wafer by a solution deposition process; by using the silver film as catalytic metal, putting the silver film into a hydrofluoric acid/oxydol solution to carry out metal catalytic chemical etching so as to prepare a silicon nanowire array structure on the silicon wafer; putting in a water solution containing ammonia water to prepare a silicon dioxide nanowire array structure with small bonding force with the silicon substrate under the catalytic oxidation and etching actions of the metal silver on the ammonia water; taking out the sample, and applying a silica gel layer; after the silica gel solidifies, taking off the silica gel layer to implement stripping of the silicon dioxide nanowire array from the silicon substrate; and bonding the organic substance film with the nanowire array with any substrate by using silver adhesive to implement the transfer of the silicon dioxide nanowire array. The method is simple to operate and low at cost, and can be used for large-scale production.
Description
Technical field
The present invention relates to a kind of manufacture craft of nanometer silica line array, relate in particular to a kind of peel off-implantation method of nanometer silica line array.
Background technology
Nanometer silica line array, with its unique character, causes more and more people's attention.Nanometer silica line array has important application prospect in modified rubber, engineering plastics, biomedicine, optics, novel sensor, energy transformation and nanoelectronics.
But, because growth has the silicon chip of nanometer silica line array itself, be rigid material, thus seriously limited its range of application, so development peel off-transfer techniques simple, nanometer silica line array efficiently is vital.In prior art, there is no comparatively ideal method realizes nanometer silica line array and easily peels off-shift.
Summary of the invention
Peel off-the implantation method that the object of this invention is to provide a kind of low cost, simple, efficient nanometer silica line array.
The object of the invention is to be achieved through the following technical solutions:
Peel off-the implantation method of nanometer silica line array of the present invention, comprises step:
A, silicon chip pre-treatment: clean monocrystalline silicon piece;
The preparation of porous silverskin on B, silicon chip: 0.085g Silver Nitrate is dissolved in deionized water, adding 20ml mass concentration is 40% hydrofluoric acid again, then adds deionized water to 100ml, after stirring, put into the silicon chip that steps A was cleaned, standing deposition silverskin 2min at 25 ℃ of room temperatures;
The preparation of silicon nanowire array on C, silicon chip: get 4.1ml mass concentration and be the hydrofluoric acid that 30% hydrogen peroxide and 20ml mass concentration are 40%, add deionized water to be mixed with the etching solution of 100ml, etching solution standing etching 10min at 25 ℃ of room temperatures is put into the silicon chip of porous silverskin in the surface making in step B, obtain surface with the silicon chip of silicon nanowire array structure.
D, the oxidation of argent catalysis ammoniacal liquor and etching, preparation is connected the nanometer silica line array structure that power is little with substrate: get mass concentration and be 25～28% ammoniacal liquor and within 1: 100 by volume, join and in deionized water, prepare etching liquid, this etching solution is put into the silicon chip of nanowire array structure in the surface of preparing in step C, then standing etching 5-10min under 60 ℃ of water bath condition, makes and is connected the nanometer silica line array structure that power is very little with silicon chip;
Peeling off of E, nanometer silica line array: the sample surfaces in step D drips and is coated with one deck silica gel standing 24h or accelerate silica gel by heating and solidify under 25 ℃ of conditions of room temperature, after silica gel solidifies, peeled, obtained surface with the silica gel thin film of nanometer silica line array;
The transfer of F, nanometer silica line array: get surface in step e with the silica gel with nanometer silica line array, by elargol, the nano-wire array face of silica gel is adhered on flexible sarin film.
As seen from the above technical solution provided by the invention, peel off-the implantation method of the nanometer silica line array that the embodiment of the present invention provides, by using solution-deposition method, on silicon chip, prepare one deck porous silverskin, using this silverskin as catalytic metal, put into hydrofluoric acid/hydrogen peroxide solution and carry out metal catalytic chemical milling, on silicon chip, prepare silicon nanowire array structure, put into again the aqueous solution that is added with ammoniacal liquor, by the oxidation of argent catalysis ammoniacal liquor and etching, prepare the nanometer silica line array structure that is connected (even desorption) that power is little with silicon substrate, after taking out sample, apply one deck medium organism (for example silica gel) thereon, after solidifying, take this layer of organic thin film off, can realize nanometer silica line array peels off from silicon substrate, for example, by binding agent (elargol) can this layer is mutually bonding (afterwards with any substrate with the organic thin film of nano-wire array, also vehicular organic matter removal can be fallen), realize the transfer of nanometer silica line array.This method is simple to operate, and cost is low, can be used for scale operation.
Accompanying drawing explanation
The process flow diagram of the peel off-implantation method of the nanometer silica line array that Fig. 1 provides for the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
Peel off-the implantation method of nanometer silica line array of the present invention, its preferably embodiment be:
Comprise step:
A, silicon chip pre-treatment: clean monocrystalline silicon piece;
The preparation of porous silverskin on B, silicon chip: 0.085g Silver Nitrate is dissolved in deionized water, adding 20ml mass concentration is 40% hydrofluoric acid again, then adds deionized water to 100ml, after stirring, put into the silicon chip that steps A was cleaned, standing deposition silverskin 2min at 25 ℃ of room temperatures;
The preparation of silicon nanowire array on C, silicon chip: get 4.1ml mass concentration and be the hydrofluoric acid that 30% hydrogen peroxide and 20ml mass concentration are 40%, add deionized water to be mixed with the etching solution of 100ml, etching solution standing etching 10min at 25 ℃ of room temperatures is put into the silicon chip of porous silverskin in the surface making in step B, obtain surface with the silicon chip of silicon nanowire array structure.
D, the oxidation of argent catalysis ammoniacal liquor and etching, preparation is connected the nanometer silica line array structure that power is little with substrate: get mass concentration and be 25～28% ammoniacal liquor and within 1: 100 by volume, join and in deionized water, prepare etching liquid, this etching solution is put into the silicon chip of nanowire array structure in the surface of preparing in step C, then standing etching 5-10min under 60 ℃ of water bath condition, makes and is connected the nanometer silica line array structure that power is very little with silicon chip;
Peeling off of E, nanometer silica line array: the sample surfaces in step D drips and is coated with one deck silica gel standing 24h or accelerate silica gel by heating and solidify under 25 ℃ of conditions of room temperature, after silica gel solidifies, peeled, obtained surface with the silica gel thin film of nanometer silica line array;
The transfer of F, nanometer silica line array: get surface in step e with the silica gel with nanometer silica line array, by elargol, the nano-wire array face of silica gel is adhered on flexible sarin film.
In described step C, by controlling etching period, control the length of nano wire.
In described step e,,, remove with nitric acid if do not need this layer of silverskin with porous silverskin with the top of the nano wire on the silica gel thin film of nanometer silica line array on the surface making.
Described steps A comprises:
First use acetone ultrasonic cleaning monocrystalline silicon piece, then the ammoniacal liquor that is 25%-28% by mass concentration: the hydrogen peroxide that mass concentration is 30%: deionized water=1: the mixed solution ultrasonic cleaning monocrystalline silicon piece of 1: 5 volume ratio, then use deionized water ultrasonic cleaning monocrystalline silicon piece.
The present invention uses solution-deposition method, on silicon chip, prepare one deck porous silverskin, using this silverskin as catalytic metal, put into hydrofluoric acid/hydrogen peroxide solution and carry out metal catalytic chemical milling, on silicon chip, prepare silicon nanowire array structure, put into again the aqueous solution that is added with ammoniacal liquor, by the oxidation of argent catalysis ammoniacal liquor and etching, prepare the nanometer silica line array structure that is connected (even desorption) that power is little with silicon substrate, after taking out sample, apply one deck medium organism (for example silica gel) thereon, after solidifying, take this layer of organic thin film off, can realize nanometer silica line array peels off from silicon substrate, for example, by binding agent (elargol) can this layer is mutually bonding (afterwards with any substrate with the organic thin film of nano-wire array, also vehicular organic matter removal can be fallen), realize the transfer of nanometer silica line array.This method is simple to operate, and cost is low, can be used for scale operation.
Argent catalysis ammoniacal liquor oxidation-etching method of the present invention makes to be connected power very little (even desorption) between nanometer silica line array and silicon substrate, by means of organic binder bond, can very easily realize peeling off and shifting of Large-Area-Uniform nano-wire array, and target substrate substantially unrestricted (flexible or inflexibility).
Of the present inventionly based on argent catalysis ammoniacal liquor oxidation-etching method, prepare easily the nanometer silica line array structure of peeling off-shifting, low-cost, simple, efficient, after ammoniacal liquor etch processes, original silicon nanowires be oxidized to silicon-dioxide and with silicon chip between be connected power and also become very a little less than, can be easy to strip down.Present method only need to be prepared suitable ammoniacal liquor etchant concentration and suitable bath temperature, just can make the nanometer silica line array structure of easily peeling off-shifting of Large-Area-Uniform.
The method that the present invention prepares easily the nanometer silica line array structure of peeling off-shifting is: by Silver Nitrate (AgNO
3)/hydrofluoric acid (HF) aqueous solution deposition for some time, on silicon chip, prepare one deck porous silverskin, using this silverskin as etching catalytic metal, put into hydrofluoric acid (HF)/hydrogen peroxide (H
2o
2) carry out etching in solution, prepare silicon nanowire array structure.In etched process, porous silverskin is in all the time the root of nano wire in the process moving downward.Then sample is put into ammoniacal liquor (NH
4oH) in solution, in high temperature bath, be incubated for some time, silicon nanowires is oxidized to nanometer silica line, nano wire root is under the catalytic etching of silverskin simultaneously, first attenuate and even depart from silicon substrate, thereby prepare, to be connected power very weak with substrate silicon, the nanometer silica line array structure of easily peeling off, and porous silverskin still sticks in the root of nano wire, by applying one deck medium organism at silicon chip surface (as silica gel, poly-fluoro-resin etc.), after organism solidifies, peel, can realize nanometer silica line array structure and peel off that (now the root of former silicon nanowire array structure becomes the top of present nanometer silica line array structure, and covered the netted silverskin of one deck).Use binding agent, the substrate of wanting can be easily surface being shifted with the organic film of nanowire array structure gets on (afterwards, also can be when peeling off medium organic matter removal used), realizes the transfer of silicon nanowire array structure.
The feature of this method have following some:
Nanometer silica line array structure is made by silicon nanowire array structure oxidation.
Silicon nanowire array is after argent catalysis ammoniacal liquor oxidation-etch processes, and nano wire root becomes very carefully and even to depart from silicon substrate, this make between nanowire array structure and bottom silicon chip to be connected power very little, be easy to realize peeling off of nano-wire array.
Nanometer silica line top after peeling off (former silicon nanowires root) is with one deck porous silverskin.
The target substrate shifting is wide, can transfer in most solid substrate (flexible or inflexibility).
As the organism of peeling off medium, select extensively (with rear removable or stable chemical nature).
The length of nano wire can be carried out accuracy controlling by the etched time in hydrofluoric acid/hydrogen peroxide solution.
This method is not prepared the restriction of area, and very even.
Monocrystalline silicon piece can be reused.
Cost is low, simple to operation.
The present invention utilizes the porous silverskin of preparing on cleaning silicon wafer as catalytic metal, by etching in hydrofluoric acid/hydrogen peroxide, prepare silicon nanowire array, put into again ammonia soln, under high temperature bath, by argent catalysis ammoniacal liquor, be oxidized and etching, prepare and be connected the nanometer silica line array structure that power is very little with silicon substrate, recycling organism medium and binding agent are realized peeling off-shifting of nano-wire array.
Specific embodiment:
Equipment used: ultrasonic apparatus, constant temperature water tank.
Experimental procedure, as shown in Figure 1:
5(volume ratio) and deionized water ultrasonic cleaning monocrystalline silicon piece 1, silicon chip pre-treatment: use successively acetone, ammoniacal liquor (mass concentration 25%-28%): hydrogen peroxide (mass concentration 30%): deionized water=1: 1:.
2, the preparation of porous silverskin on silicon chip: 0.5mmol(0.085g) Silver Nitrate (AgNO
3) be dissolved in a certain amount of deionized water, then add 0.46mol(20ml) hydrofluoric acid (HF, mass concentration is 40%), then add deionized water to 100ml, after stirring, put into the silicon chip that step 1 was cleaned, 25 ℃ of standing deposition silverskin 2min(room temperatures).
3, the preparation of silicon nanowire array on silicon chip: prepare according to a certain ratio etching solution, get 40mmol(4.1ml) hydrogen peroxide (H
2o
2, mass concentration is 30%) and 0.46mol(20ml) hydrofluoric acid (HF, mass concentration is 40%), add deionized water to be mixed with the etching solution of 100ml.The standing etching 10min(of etching solution etching period is put into the silicon chip of porous silverskin in surface in step 2 different, nanowire length is different, can accuracy controlling) (25 ℃ of room temperatures), obtain surface with the silicon chip of silicon nanowire array structure.
4, the oxidation of argent catalysis ammoniacal liquor and etching, preparation is connected the nanometer silica line array structure that power is little with substrate: ammoniacal liquor (NH is put into the silicon chip of nanowire array structure in the surface of preparation in step 3
4hO) (mass concentration is 25～28%): deionized water=1: 100(volume ratio) in etching solution, then put at once constant temperature water tank, standing etching 5-10min under 60 ℃ of conditions, just can make and be connected the nanometer silica line array structure that power is very little with substrate.
5, peeling off of nanometer silica line array: the sample surfaces in step 4 drips and is coated with under 25 ℃ of conditions of one deck silica gel (silica gel viscosity is adjustable) room temperature standing 24h(and also can accelerates silica gel by heating and solidify), after silica gel solidifies, peeled, just can obtain surface with the silica gel thin film of nanometer silica line array, and nano wire top (former silicon nanowires root) with porous silverskin (certainly, if do not need this layer of silverskin, also available nitric acid is removed).
6, the transfer of nanometer silica line array: get surface in step 5 with the silica gel with nanometer silica line array, by elargol, the nano-wire array face of silica gel is adhered on flexible sarin film.
The effect of specific embodiment:
Scanning electronic microscope (as shown in Figure 1) analytical proof the peel off-migration process of nanometer silica line array.
In Fig. 1, the porous silverskin (a) depositing on silicon chip, the sectional elevation that illustration is silverskin; (b) silicon nanowire array structure (sectional elevation); (c) be connected the power nanometer silica line array structure (45° angle oblique drawing) of very little (even departing from) with substrate, illustration is sectional elevation; (d) peel off-be transferred to the nanometer silica line array structure (45° angle oblique drawing) on silica gel; (e) by elargol, being transferred to the nanometer silica line array structure (sectional elevation) on sarin film, is layer of silica gel-nanometer silica line array layer-elargol layer-sarin rete from top to bottom successively in figure.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (4)
1. a peel off-implantation method for nanometer silica line array, is characterized in that, comprises step:
A, silicon chip pre-treatment: clean monocrystalline silicon piece;
The preparation of porous silverskin on B, silicon chip: 0.085g Silver Nitrate is dissolved in deionized water, adding 20ml mass concentration is, in 40% hydrofluoric acid, then to add deionized water to 100ml, after stirring again, put into the silicon chip that steps A was cleaned, standing deposition silverskin 2min at 25 ℃ of room temperatures;
The preparation of silicon nanowire array on C, silicon chip: get 4.1ml mass concentration and be the hydrofluoric acid that 30% hydrogen peroxide and 20ml mass concentration are 40%, add deionized water to be mixed with the etching solution of 100ml, etching solution standing etching 10min at 25 ℃ of room temperatures is put into the silicon chip of porous silverskin in the surface making in step B, obtain surface with the silicon chip of silicon nanowire array structure;
D, the oxidation of argent catalysis ammoniacal liquor and etching, preparation is connected the nanometer silica line array structure that power is little with substrate: get mass concentration and be 25～28% ammoniacal liquor by volume 1:100 join and in deionized water, prepare etching liquid, this etching solution is put into the silicon chip of nanowire array structure in the surface of preparing in step C, then standing etching 5-10min under 60 ℃ of water bath condition, makes and is connected the nanometer silica line array structure that power is very little with silicon chip;
Peeling off of E, nanometer silica line array: the sample surfaces in step D drips and is coated with one deck silica gel standing 24h or accelerate silica gel by heating and solidify under 25 ℃ of conditions of room temperature, after silica gel solidifies, peeled, obtained surface with the silica gel thin film of nanometer silica line array;
The transfer of F, nanometer silica line array: get surface in step e with the silica gel with nanometer silica line array, by elargol, the nano-wire array face of silica gel is adhered on flexible sarin film.
2. the peel off-implantation method of nanometer silica line array according to claim 1, is characterized in that, in described step C, controls the length of nano wire by controlling etching period.
3. the peel off-implantation method of nanometer silica line array according to claim 1, it is characterized in that, in described step e, the surface making with the top of the nano wire on the silica gel thin film of nanometer silica line array with porous silverskin, if do not need this layer of silverskin, remove with nitric acid.
4. according to the peel off-implantation method of the nanometer silica line array described in claim 1,2 or 3, it is characterized in that, described steps A comprises:
First use acetone ultrasonic cleaning monocrystalline silicon piece, then the ammoniacal liquor that is 25%-28% by mass concentration: the hydrogen peroxide that mass concentration is 30%: the mixed solution ultrasonic cleaning monocrystalline silicon piece of deionized water=1:1:5 volume ratio, then use deionized water ultrasonic cleaning monocrystalline silicon piece.
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| CN103337449B (en) * | 2013-04-28 | 2016-01-06 | 中国科学院合肥物质科学研究院 | Method prepared by the transplanting of silicon nanowire array and simple Devices thereof |
| CN103521226B (en) * | 2013-11-05 | 2015-05-20 | 华东理工大学 | Catalyst with copper nanoparticles loaded on silicon nanowire array, preparing method thereof and application thereof |
| CN104045054A (en) * | 2014-05-14 | 2014-09-17 | 中国科学院合肥物质科学研究院 | Method for preparing high-adhesion micro-nano array structure film through wet etching and reverse transfer printing |
| CN104835719B (en) * | 2015-04-01 | 2018-03-16 | 浙江大学 | A kind of porous SiO2The preparation method of nano-wire array |
| CN109324088A (en) * | 2017-07-31 | 2019-02-12 | 天津大学 | The heterogeneous multilevel structure of silicon nanowires and its preparation method and application of netted tungsten oxide nano modification |
| CN108069389B (en) * | 2017-12-07 | 2020-06-09 | 天津大学 | Preparation method of magnetic control directional fast moving micro-nano robot |
| CN109813760A (en) * | 2019-02-28 | 2019-05-28 | 江苏理工学院 | A kind of zinc oxide nanowire gas sensor and preparation method thereof |
| CN109876297B (en) * | 2019-03-06 | 2021-04-30 | 南京大学 | Implantable photoelectric cardiac pacemaker and preparation method thereof |
| CN112028077B (en) * | 2020-09-15 | 2022-04-05 | 北京师范大学 | Method for forming cracks in silicon nanowires and silicon nanowire array |
| CN113345796A (en) * | 2021-04-30 | 2021-09-03 | 中国科学院微电子研究所 | Preparation method of silicon nanowire |
| CN113331182B (en) * | 2021-06-28 | 2022-02-01 | 清华大学深圳国际研究生院 | Porous material with surface-modified nano-structure array and application thereof |
| CN114956089B (en) * | 2022-04-30 | 2023-06-23 | 苏州大学 | Preparation method of super-structured surface or composite fluorescent dye super-structured surface |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266919A (en) * | 2008-04-25 | 2008-09-17 | 华东师范大学 | A method for selectively etching silicon nano line |
| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
| CN102560493A (en) * | 2012-01-18 | 2012-07-11 | 电子科技大学 | Method for preparing silicon nanowire array |
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2012
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266919A (en) * | 2008-04-25 | 2008-09-17 | 华东师范大学 | A method for selectively etching silicon nano line |
| CN102126724A (en) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | Method for preparing silicon nanowire array with smooth surface |
| CN102560493A (en) * | 2012-01-18 | 2012-07-11 | 电子科技大学 | Method for preparing silicon nanowire array |
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