CN111874896A - Method for accurately transferring two-dimensional material and application thereof - Google Patents
Method for accurately transferring two-dimensional material and application thereof Download PDFInfo
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- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 11
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 11
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Ceramic Engineering (AREA)
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Abstract
The invention discloses a method for accurately transferring a two-dimensional material and application thereof, comprising the following steps: obtaining a two-dimensional material on a substrate, spin-coating PMMA to form a PMMA film, and enabling the two-dimensional material to be attached below the PMMA film; separating the PMMA film from the substrate, and adhering the PMMA film by using a transparent carrier; the transparent carrier attached with the PMMA film is inversely attached to a mechanical arm of a displacement table and is transferred to a target position of a target substrate; and removing the transparent carrier and the PMMA film in sequence to realize accurate transfer of the two-dimensional material. The method is simultaneously suitable for the two-dimensional material prepared by vapor deposition and mechanical stripping, and can accurately transfer the two-dimensional material to a certain determined point position, so that the method has great advantages in the fields of preparation of two-dimensional material heterojunction and preparation of device electrodes; the method has the advantages of wide application range, high efficiency, less transfer media, clearer observation, low price of required equipment and simple operation.
Description
Technical Field
The invention belongs to the technical field of materials, and particularly relates to a method for accurately transferring a two-dimensional material and application thereof.
Background
In 2004, two scientists of manchester university, england, adenle-gommand constatin noroboroff stripped single-layer graphene, which is typically a two-dimensional material, from graphite. Because the two-dimensional material has many excellent properties, the two-dimensional material has wide prospects in the fields of physics, materials, electronic information, computers and the like, such as: the surface has no dangling bond, can effectively solve the short channel effect of the silicon-based material, and is expected to become a next-generation integrated circuit material.
On one hand, in basic research, because two-dimensional material layers are combined by weak van der waals force, the problem of lattice mismatch does not exist, and the research on various novel physical properties by manufacturing a heterojunction becomes possible, but the precision transfer of the two-dimensional material and the manufacturing difficulty of the heterojunction are higher, most of the existing transfer means are limited to common transfer among different substrates, and the controllable transfer method has complex steps, high requirements on equipment and high operation difficulty. On the other hand, the existing transfer technology mostly focuses on the material for mechanical stripping, and the material prepared by vapor deposition is less focused. Even if the existing transfer technology is applied to transfer a two-dimensional material, the material is only transferred out, and the precise sticking of the material to a specific position cannot be realized.
Patent No. CN 104960286B discloses a controllable flexible transfer method of two-dimensional material, which comprises the following steps: obtaining a two-dimensional material to be transferred by a mechanical stripping method or other methods; then, spraying polypropylene carbonate glue on the surface of the two-dimensional material; standing and heating to solidify the polypropylene carbonate glue, and attaching the two-dimensional material to the lower part of the formed polypropylene carbonate film; then the film is arranged on a micromanipulator with a polydimethylsiloxane buffer layer, and is accurately aligned to the target position of a target substrate by virtue of an optical microscope; and finally, heating to melt the polypropylene carbonate film, and removing residual polypropylene carbonate by using an organic solvent. However, in the method, the polypropylene carbonate is expensive and has low mechanical property, and the polypropylene carbonate adhesive film is easy to tear or deform when being taken off from the substrate, so that the transfer effect is poor. On the other hand, the micro-manipulator needs to be purchased additionally, and the equipment cost is high. In addition, the microscopic operation glass → polydimethylsiloxane → polypropylene carbonate → two-dimensional material, the four-layer structure is combined from the beginning to the last release, the parameters needed to be noticed during the adhesion and the release are more, the steps are more, the process difficulty is high, the operation difficulty is large, and the visual field is not clear enough when the alignment operation is carried out through the overlapping of the three layers of materials.
Patent application publication No. CN 103435036A discloses a graphene selective fixed-point transfer method, which combines photoresist exposure and PMMA transfer methods, and uses a microscope and a micromanipulation platform to perform micro-manipulation control of transfer, so that required graphene parts can be selectively transferred from an integral structure to a designated position of a target substrate. The patent states that the selective transfer requires a photoetching device, the technical threshold is high, various organic medicines such as photoresist, developing solution, PMMA, chloroform, acetone and the like are used, the sample is easily polluted, and in addition, the chloroform can react with oxygen in the air after being irradiated by light to decompose and generate virulent phosgene (carbonyl chloride) and hydrogen chloride. The method describes the selectivity of graphene in detail, the transfer details are not illustrated, and the specific transfer method is not detailed.
Patent application publication No. CN 110530908A discloses a two-dimensional material transfer method with low contact stress, which comprises the following steps: the method comprises the steps of preparing two PVA (polyvinyl alcohol) films with different thicknesses and concentrations, and transferring a two-dimensional material to a target substrate by utilizing the two PVA films with different thicknesses and concentrations. The PVA film is formed by uniformly covering the PVA solution on DVD and VCD discs and drying by adjusting the mixture ratio and the spin coating process. And then the PDMS and two PVA films with different thicknesses and concentrations are combined and stacked, and the viscosity of PVA at different temperatures is utilized to achieve the purpose of transferring the two-dimensional material to different substrates through a transfer platform. The method comprises the steps of tearing a sample by using an adhesive tape, pasting the sample on a clean silicon wafer, aligning by using a transfer platform, pasting a glass-PDMS-PVA (triangular) with the clean silicon wafer, heating to remove the sample, tearing off the PVA film, cutting the PVA film (square) with another thickness, reforming the PVA film (square) into a glass sheet-PVA (triangular) and aligning. And the method needs heating immediately after two times of jointing, otherwise, a PVA film containing a sample cannot be left and a glass sheet cannot be taken down, so that a professional two-dimensional material transfer platform must be purchased to realize the heating operation, and the common microscope and the displacement platform cannot meet the use requirement. In addition, two kinds of PVA (polyvinyl alcohol) with different thickness and concentration need to be prepared, and then the PVA film is prepared on the DVD by groping the process, adjusting the mixture ratio and adopting the spin-coating technology. Great care is required in tearing the PVA film, otherwise it is easily torn or deformed. In addition, the silicon wafer only randomly sticks part of the two-dimensional material from the adhesive tape, and the PVA film randomly sticks part of the two-dimensional material from the silicon wafer.
In addition to the above method, a PDMS-assisted transfer method is also used, in which a two-dimensional material mechanically peeled off with an adhesive tape is attached to PDMS by means of PDMS, and the PDMS is attached to a slide glass and transferred using a transfer platform. The method has the defects that the method is only suitable for two-dimensional materials mechanically stripped by using an adhesive tape, has a narrow application range and cannot be used for two-dimensional materials grown by vapor deposition. In addition, in the method, the PDMS randomly sticks part of the two-dimensional material from the adhesive tape, so that the sample in a specified area cannot be successfully transferred away, and in actual operation, the PDMS has high randomness and low efficiency.
In addition to the above-mentioned disadvantages, the above methods all require a rigid substrate such as a glass sheet as a carrier, and when the robot arm descends, the transferred material is closely attached to the target substrate, so that the target substrate or glass sheet is easily crushed by some carelessness.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide the method for accurately transferring the two-dimensional material, which has the advantages of few operation steps, simple operation, capability of accurately transferring at a fixed point and extremely high application value.
In order to achieve the purpose, the invention adopts the technical scheme that:
a method of accurately transferring a two-dimensional material, comprising the steps of:
(1) obtaining a two-dimensional material on a substrate;
(2) spin-coating PMMA on the substrate in the step (1), heating to cure the PMMA to form a PMMA film, and enabling the two-dimensional material to be transferred to be attached below the PMMA film;
(3) separating the PMMA film attached with the two-dimensional material from the substrate, then placing the PMMA film in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the side of the PMMA film, which is attached with the two-dimensional material, faces outwards; the principle of adhering the PMMA film by using the transparent carrier is as follows: after the PMMA film is rinsed in deionized water, water is remained on the surface, and the PMMA film can be adhered to the transparent carrier by utilizing the surface tension effect of water. The principle is similar to the principle that two pieces of glass are tightly jointed when water exists;
(4) the transparent carrier attached with the PMMA film is inversely attached to a mechanical arm of a displacement table, and the mechanical arm is moved to be transferred to a target position of a target substrate under a microscope; and when the water between the PMMA film and the transparent carrier is evaporated, the transparent carrier can be taken down. And then removing the PMMA film on the target substrate, and only leaving the transferred two-dimensional material on the target substrate, so that the precise transfer of the two-dimensional material can be realized.
Further, in the step (1), the method for obtaining the two-dimensional material on the substrate includes a vapor deposition method and a mechanical stripping method.
In the step (2), the heating temperature is 80-120 ℃, and the heating time is 5-10 min. The heating mode can be heating at 120 ℃ for 5 minutes, heating at 100 ℃ for 8 minutes or heating at 80 ℃ for 10 minutes, the heating temperature and the heating time are not fixed, and the heating time can be flexibly adjusted according to the heating temperature.
Further, in the step (3), the method for separating the PMMA film with the two-dimensional material attached thereto from the substrate may be an etching method, an electrochemical bubble separation method, or an ultrasonic bubble separation method. Wherein: the etching method is to dissolve a silicon dioxide oxide layer on the surface of a substrate by using hydrofluoric acid slow-release liquid or potassium hydroxide and other etching liquids, so that the PMMA film is separated from the substrate, for example, when a silicon wafer is selected as the substrate, the silicon dioxide oxide layer is arranged on the surface of the silicon wafer and can be reacted by the etching liquids, so that the PMMA film attached to the surface of the silicon wafer is separated from the silicon wafer; the electrochemical bubbling separation method is characterized in that an electrolytic cell is constructed by taking a substrate to be separated (a metal substrate such as a gold foil) as a cathode, and a PMMA film is separated from the substrate by using hydrogen generated on the surface of gold in the reaction process; the ultrasonic bubbling method is characterized in that ultrasonic waves generated by an ultrasonic machine are used for generating micro bubbles between the two-dimensional material and the substrate, so that the PMMA film is separated from the substrate.
In a further embodiment, in the step (3), the transparent carrier is a transparent substance with certain hardness, preferably one of PET, PDMS, a glass sheet, and the like.
Another object of the present invention is to provide an application of the method in the preparation of a two-dimensional material heterojunction, wherein in the step (4), another two-dimensional material is pre-placed on the target substrate, and the transferred two-dimensional material is attached to the original two-dimensional material at a fixed point, so as to prepare the two-dimensional material heterojunction. The heterojunction can regulate and control the properties of two-dimensional materials, obtain devices with excellent performance, can research novel physical properties, and is widely applied to basic research of physics, materials, microelectronics and the like.
The third purpose of the present invention is to provide an application of the above-mentioned precise transfer method in preparing a device electrode, in the step (4), a bottom electrode is processed on a target substrate in advance, so that a two-dimensional material fixed point is attached to the bottom electrode, and the device electrode is prepared in one step. In the prior art, expensive equipment such as a photoetching machine, a film coating machine and the like is needed for manufacturing a device by using a two-dimensional material, the requirement on the operation technology is high, and if bottom electrodes are manufactured on a target substrate in batches in advance, the two-dimensional material can be directly transferred onto the bottom electrodes to form the device by the method, so that the manufacturing efficiency of the device can be obviously improved, and the input cost can be reduced.
Compared with the prior art, the beneficial effect of this patent does:
(1) the invention further optimizes the PMMA transfer technology on the basis of the prior PMMA transfer technology, so that the PMMA transfer technology can be accurately transferred. That is, when the surface of the PMMA film has moisture, it can be adhered to the transparent support by using the surface tension of water, so as to realize the subsequent precise transfer. The method provided by the invention has wide application range, and is not only suitable for two-dimensional materials prepared by vapor deposition, but also suitable for two-dimensional materials prepared by a mechanical stripping method.
(2) The method provided by the invention can realize fixed-point transfer, namely, the two-dimensional material to be transferred can be accurately transferred to a certain fixed point position, so that the method has extremely high application value and can play great advantages in the field of preparation of two-dimensional material heterojunction and device electrode.
(3) The method provided by the invention has high transfer efficiency, only partial materials can be transferred in the prior art, and the randomness is higher; the method provided by the application can transfer all the two-dimensional materials on the substrate away, and the transfer efficiency is high.
(4) According to the invention, the transparent carrier is used for transferring the PMMA film attached with the two-dimensional material, and in the process that the mobile mechanical arm descends to enable the PMMA film to be in contact with the target substrate, the PET or PDMS and other transparent carriers have certain hardness and elasticity, so that the target substrate cannot be damaged; in the prior art, the method for transferring the hard substrates such as the glass sheets cannot timely judge whether the substrates are attached in place, and when the mechanical arm descends, the glass sheets can be crushed or the substrates can be damaged.
(5) The method can complete the operation by utilizing two devices, namely the microscope and the displacement table, does not need to additionally purchase expensive equipment, and has simple equipment; and the used materials such as PMMA, PET and the like are low in price and simple to operate.
(6) When the method is used for transferring materials, only the transparent carrier and the PMMA film are used, the number of layers is small during transferring, and a plurality of preparation layers do not need to be pasted, so that the observation is clear.
Detailed Description
The present invention will be further described with reference to the following examples. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Some of the terms involved in the present invention are explained as follows:
vapor deposition techniques: including chemical vapor deposition and physical vapor deposition, which refers to the formation of films, single crystals, fibers, etc. by gas-solid phase reactions through heating or other energy providing means.
Two-dimensional material: the material with electrons moving only on two-dimensional nano-scale has many novel properties, so that the material has important significance in basic research of physics, materials and the like, and has wide application prospect in the fields of microelectronics, integrated circuits and the like. The two-dimensional material described in the following examples and application examples is selected from graphene prepared by a vapor deposition method, which is a conventional method in the art and is not described herein.
Heterojunction: different two-dimensional materials are assembled together, and layers are combined by weak van der waals force, so that the structure can effectively regulate and control the properties of a target material to manufacture a high-performance electronic device or research novel physical properties.
PMMA, polymethyl methacrylate (PMMA) has high transparency and low price.
PET: polyethylene terephthalate is a common resin in life, has excellent physical and mechanical properties in a wider temperature range, and has good creep resistance, fatigue resistance, friction resistance and dimensional stability.
PDMS: polydimethylsiloxane (polydimethylsiloxane), a high molecular organosilicon compound, is transparent and non-toxic.
Example 1
(1) The two-dimensional material is obtained by a chemical vapor deposition method, wherein a substrate is a silicon wafer, and the surface of the silicon wafer is provided with a silicon dioxide oxidation layer with the thickness of 300 nm;
(2) using a spin coater to adsorb a silicon wafer, dripping PMMA (polymethyl methacrylate) at the rotating speed of 2000 rpm for 30 seconds, and spin-coating for three times; taking down the silicon wafer from the spin coater, placing the silicon wafer on a heating table, heating the silicon wafer for 5 minutes at 120 ℃, and curing the silicon wafer to form a PMMA film, wherein the two-dimensional material is tightly attached to the lower part of the PMMA film;
(3) taking a sodium hydroxide solution as an etching solution, putting the silicon wafer in the step (2) into the etching solution, etching the silicon dioxide oxide layer on the surface layer of the silicon wafer by using the etching solution, so that the PMMA film attached with the two-dimensional material is separated from the silicon wafer, clamping the substrate by using anti-corrosion tweezers to support the PMMA film, putting the PMMA film into deionized water, and rinsing the etching solution attached to the PMMA film to avoid affecting a target substrate; taking PET as a transparent carrier, fishing out the PMMA film (the side of the PMMA film, which is attached with the two-dimensional material sample, faces outwards) by using the PET, and enabling the PMMA film to be tightly attached to the PET due to the tension of water because a certain amount of deionized water is arranged between the PMMA film and the PET;
(4) inversely sticking the PET (with the PMMA film and the two-dimensional material) on a mechanical arm of a displacement table, wherein the inversely sticking means that one surface of the PET with the PMMA film and the two-dimensional material faces downwards (the same direction below), operating the direction of the mechanical arm X, Y under a microscope to enable the required two-dimensional material to be consistent with the target position on the target substrate, and operating the direction Z of the mechanical arm to enable the required two-dimensional material on the PMMA to be stuck with the target substrate; standing until water between PMMA and PET is evaporated, and separating PET; then, placing the target substrate on a heating table, and heating for 5 minutes at 120 ℃ to enable the transferred two-dimensional material to be tightly attached to the target substrate; and finally, slowly placing the transferred target substrate into a beaker filled with acetone, removing the PMMA film on the uppermost layer by using the acetone, and only leaving the transferred two-dimensional material on the target substrate, so that the accurate transfer of the two-dimensional material can be realized.
Application example 1
Preparation of two-dimensional material heterojunctions
(1) The two-dimensional material is obtained by a chemical vapor deposition method, wherein a substrate is a silicon wafer, and the surface of the silicon wafer is provided with a silicon dioxide oxidation layer with the thickness of 300 nm;
(2) using a spin coater to adsorb a silicon wafer, dripping PMMA (polymethyl methacrylate) at the rotating speed of 2000 rpm for 30 seconds, and spin-coating for three times; taking down the silicon wafer from the spin coater, placing the silicon wafer on a heating table, heating the silicon wafer for 5 minutes at 120 ℃, and curing the silicon wafer to form a PMMA film, wherein the two-dimensional material is tightly attached to the lower part of the PMMA film;
(3) taking a sodium hydroxide solution as an etching solution, putting the silicon wafer in the step (2) into the etching solution, etching the silicon dioxide oxide layer on the surface layer of the silicon wafer by using the etching solution, so that the PMMA film attached with the two-dimensional material is separated from the silicon wafer, clamping the substrate by using anti-corrosion tweezers to support the PMMA film, putting the PMMA film into deionized water, and rinsing the etching solution attached to the periphery of the PMMA film so as to avoid affecting a target substrate; taking PET as a transparent carrier, fishing out the PMMA film (the side of the PMMA film, which is attached with the two-dimensional material sample, faces outwards) by using the PET, and enabling the PMMA film to be tightly attached to the PET due to the tension of water because a certain amount of deionized water is arranged between the PMMA film and the PET;
(4) inversely attaching PET (with a PMMA film and a two-dimensional material) on a mechanical arm of a displacement table, operating the direction of the mechanical arm X, Y under a microscope to enable the direction of the two-dimensional material to be consistent with the direction of X, Y of the original two-dimensional material on the target substrate, and operating the direction of Z of the mechanical arm to enable the two-dimensional material required on the PMMA to be attached to the original two-dimensional material on the target substrate; standing until water between PMMA and PET is evaporated, and separating PET; then, placing the target substrate on a heating table, and heating for 5 minutes at 120 ℃ to enable the transferred two-dimensional material to be tightly attached to the original two-dimensional material; and finally, slowly placing the transferred target substrate into a beaker filled with acetone, removing the PMMA film on the uppermost layer by using the acetone, and only leaving the heterojunction formed by the transferred two-dimensional material and the original two-dimensional material on the target substrate, namely realizing the manufacture of the two-dimensional material heterojunction.
Application example 2
Preparation of device electrodes
(1) The two-dimensional material is obtained by a chemical vapor deposition method, wherein a substrate is a silicon wafer, and the surface of the silicon wafer is provided with a silicon dioxide oxidation layer with the thickness of 300 nm;
(2) using a spin coater to adsorb a silicon wafer, dripping PMMA (polymethyl methacrylate) at the rotating speed of 2000 rpm for 30 seconds, and spin-coating for three times; taking down the silicon wafer from the spin coater, placing the silicon wafer on a heating table, heating the silicon wafer for 5 minutes at 120 ℃, and curing the silicon wafer to form a PMMA film, wherein the two-dimensional material is tightly attached to the lower part of the PMMA film;
(3) taking a sodium hydroxide solution as an etching solution, putting the silicon wafer in the step (2) into the etching solution, etching the silicon dioxide oxide layer on the surface layer of the silicon wafer by using the etching solution, so that the PMMA film attached with the two-dimensional material is separated from the silicon wafer, clamping the substrate by using anti-corrosion tweezers to support the PMMA film, putting the PMMA film into deionized water, and rinsing the etching solution attached to the periphery of the PMMA film so as to avoid affecting a target substrate; taking PET as a transparent carrier, fishing out the PMMA film (the side of the PMMA film, which is attached with the two-dimensional material sample, faces outwards) by using the PET, and enabling the PMMA film to be tightly attached to the PET due to the tension of water because a certain amount of deionized water is arranged between the PMMA film and the PET;
(4) inversely attaching PET (with a PMMA film and a two-dimensional material) on a mechanical arm of a displacement table, operating the direction of the mechanical arm X, Y under a microscope to enable the required two-dimensional material to be consistent with the direction X, Y of a bottom electrode on a target substrate, and operating the direction Z of the mechanical arm to enable the required two-dimensional material on the PMMA to be attached to the bottom electrode; standing until water between PMMA and PET is evaporated, and separating PET; then, placing the target substrate on a heating table, heating for 5 minutes at 120 ℃ to enable the transferred two-dimensional material to be tightly attached to the bottom electrode, and preparing a device electrode in one step; and finally, slowly placing the transferred target substrate into a beaker filled with acetone, removing the PMMA film on the uppermost layer by using the acetone, and only leaving a device made of a two-dimensional material and a bottom electrode on the target substrate.
Claims (7)
1. A method of accurately transferring a two-dimensional material, comprising: the method comprises the following steps:
(1) obtaining a two-dimensional material on a substrate;
(2) spin-coating PMMA on the substrate in the step (1), heating to solidify the PMMA to form a PMMA film, and enabling a two-dimensional material to be attached below the PMMA film;
(3) separating the PMMA film attached with the two-dimensional material from the substrate, then placing the PMMA film in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the side of the PMMA film, which is attached with the two-dimensional material, faces outwards;
(4) the transparent carrier attached with the PMMA film is inversely attached to a mechanical arm of a displacement table, and the mechanical arm is moved to be transferred to a target position of a target substrate under a microscope; after the water between the PMMA film and the transparent carrier is evaporated, the transparent carrier can be taken down; and then removing the PMMA film on the target substrate, and only leaving the transferred two-dimensional material on the target substrate, so that the precise transfer of the two-dimensional material can be realized.
2. The method of claim 1, wherein: in the step (1), the method for obtaining the two-dimensional material on the substrate comprises a vapor deposition method and a mechanical stripping method.
3. The method of claim 1, wherein: in the step (2), the heating temperature is 80-120 ℃, and the heating time is 5-10 min.
4. The method of claim 1, wherein: in the step (3), the method for separating the PMMA film with the two-dimensional material attached thereto from the substrate may be an etching method, an electrochemical bubble separation method, or an ultrasonic bubble separation method.
5. The method of claim 1, wherein: in the step (3), the transparent carrier is PET, PDMS or a glass sheet.
6. Use of a method according to any of claims 1-5 for the preparation of a two-dimensional material heterojunction, wherein: in the step (4), another two-dimensional material is pre-placed on the target substrate, and the transferred two-dimensional material is attached to the pre-placed another two-dimensional material at a fixed point, so that a two-dimensional material heterojunction is prepared; the specific method comprises the following steps:
(1) obtaining a two-dimensional material on a substrate;
(2) spin-coating PMMA on the substrate in the step (1), heating to solidify the PMMA to form a PMMA film, and enabling a two-dimensional material to be attached below the PMMA film;
(3) separating the PMMA film attached with the two-dimensional material from the substrate, then placing the PMMA film in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the side of the PMMA film, which is attached with the two-dimensional material, faces outwards;
(4) the transparent carrier attached with the PMMA film is inversely attached to a mechanical arm of a displacement table, and then another two-dimensional material is pre-placed on a target substrate; under a microscope, moving a mechanical arm to enable the two-dimensional material attached under the PMMA film to be attached to another two-dimensional material on the target substrate at a fixed point, and taking down the transparent carrier after the water between the PMMA film and the transparent carrier is evaporated; and then removing the PMMA film on the target substrate to finish the manufacture of the two-dimensional material heterojunction.
7. Use of a method according to any of claims 1 to 5 for the preparation of an electrode for a device, wherein: in the step (4), a bottom electrode is processed on a target substrate in advance, so that the two-dimensional material fixed point is attached to the bottom electrode, and a two-dimensional material device is prepared in one step, wherein the specific method comprises the following steps:
(1) obtaining a two-dimensional material on a substrate;
(2) spin-coating PMMA on the substrate in the step (1), heating to solidify the PMMA to form a PMMA film, and enabling a two-dimensional material to be attached below the PMMA film;
(3) separating the PMMA film attached with the two-dimensional material from the substrate, then placing the PMMA film in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the side of the PMMA film, which is attached with the two-dimensional material, faces outwards;
(4) the transparent carrier attached with the PMMA film is inversely attached to a mechanical arm of a displacement table, and then a bottom electrode is processed on a target substrate in advance; under a microscope, moving a mechanical arm to enable the two-dimensional material attached under the PMMA film to be attached to a bottom electrode on a target substrate at a fixed point, and taking down the transparent carrier after the water between the PMMA film and the transparent carrier is evaporated; and then removing the PMMA film on the target substrate, and only leaving the transferred two-dimensional material and the device electrode made of the bottom electrode on the target substrate.
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