CN111874896B - Method for accurately transferring two-dimensional material and application thereof - Google Patents
Method for accurately transferring two-dimensional material and application thereof Download PDFInfo
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Abstract
The invention discloses a method for accurately transferring two-dimensional materials and application thereof, comprising the following steps: acquiring a two-dimensional material on a substrate, and spin-coating PMMA to form a PMMA film, so that the two-dimensional material is attached below the PMMA film; separating the PMMA film from the substrate, and adhering the PMMA film by using a transparent carrier; the transparent carrier attached with the PMMA film is reversely attached to a mechanical arm of a displacement table, and is transferred to a target position of a target substrate; and sequentially removing the transparent carrier and the PMMA film, so that the precise transfer of the two-dimensional material can be realized. The method is simultaneously suitable for the two-dimensional material prepared by vapor deposition and mechanical stripping, and can accurately transfer the two-dimensional material to a certain fixed point position, so that the method has great advantages in the fields of heterojunction preparation of the two-dimensional material and device electrode preparation; the method has the advantages of wide application range, high efficiency, less transfer medium, clearer observation, low price of required equipment and simple operation.
Description
Technical Field
The invention belongs to the technical field of materials, and particularly relates to a method for accurately transferring a two-dimensional material and application thereof.
Background
In 2004, two scientists of the university of manchester, england, andersome and Constant novo, exfoliated single-layer graphene from graphite, a typical two-dimensional material. Because the two-dimensional material has a plurality of excellent properties, the two-dimensional material has wide prospect in the fields of physics, materials, electronic information, computers and the like, such as: the surface has no suspension bond, can effectively solve the short channel effect of the silicon-based material, and is expected to become the next generation integrated circuit material.
On the one hand, in basic research, because the two-dimensional material layers are combined by weak van der Waals force, the problem of lattice mismatch does not exist, so that various novel physical properties can be researched by manufacturing a heterojunction, but the accurate transfer of the two-dimensional material and the manufacturing difficulty of the heterojunction are high, most of the existing transfer means are limited to common transfer among different substrates, and the controllable transfer method is complex in step, high in equipment requirement and high in operation difficulty. On the other hand, most of the existing transfer techniques focus on mechanically exfoliated materials, and less on vapor deposition prepared materials. Even if the existing transfer technology is applied to transfer two-dimensional materials, the materials are simply transferred out, and accurate pasting of the materials to specific positions cannot be achieved.
The patent with the publication number CN 104960286B discloses a controllable two-dimensional material flexible transferring method, which comprises the following steps: obtaining a two-dimensional material to be transferred by a mechanical stripping method or other methods; then, spraying polypropylene carbonate adhesive on the surface of the two-dimensional material; standing and heating to solidify the polypropylene carbonate adhesive, and attaching the two-dimensional material under the formed polypropylene carbonate film; then the film is arranged on a micro manipulator carrying a polydimethylsiloxane buffer layer and is precisely aligned to a target position of a target substrate by means of an optical microscope; finally, the polypropylene carbonate film is heated and melted, and the residual polypropylene carbonate is removed by using an organic solvent. However, in the method, the polypropylene carbonate is relatively expensive, the mechanical property is low, and the polypropylene carbonate adhesive film is easy to tear or deform when being torn off from the substrate, so that the transfer effect is poor. On the other hand, an additional purchasing of a micro manipulator is needed, and the equipment cost is high. In addition, the glass is subjected to microscopic operation, the polydimethylsiloxane, the polypropylene carbonate and the two-dimensional material, the four-layer structure is combined from the beginning to the final release, the parameters needed to be noted during the bonding and the release are more, the steps are more, the process difficulty is high, the operation difficulty is high, and the visual field is not clear enough when the alignment operation is carried out through the overlapping of three layers of materials.
The patent with application publication number of CN 103435036A discloses a graphene selective fixed-point transfer method, which combines a photoresist exposure method and a PMMA transfer method, and uses a microscope and a micro-operation platform to carry out microscopic operation control of transfer, so that a required graphene part can be selectively transferred out from the whole structure to a designated position of a target substrate. The patent describes that the selective transfer can be realized, photoetching equipment is needed, the technical threshold is high, various organic medicines such as photoresist, developing solution, PMMA, chloroform, acetone and the like are used, the sample is easy to pollute, in addition, chloroform can act with oxygen in the air when meeting illumination, and highly toxic phosgene (carbonyl chloride) and hydrogen chloride are generated by decomposition. The method describes the selectivity to graphene in detail, the transfer details are not set forth, and the specific transfer method is not detailed.
The application publication number CN 110530908A discloses a transfer method of low contact stress of a two-dimensional material, which comprises the following steps: the method comprises the steps of preparing two PVA (polyvinyl alcohol) films with different thicknesses and concentrations, and transferring two-dimensional materials to a target substrate by using the two films with different thicknesses and concentrations. The PVA solution is uniformly covered on DVD and VCD discs by adjusting the proportion and the spin coating process, and then the PVA film is formed after drying. And then, through the combination stacking of PDMS and two PVA films with different thickness and concentration, the purpose of transferring the two-dimensional material to different substrates is achieved through a transfer platform by utilizing the viscosity of PVA at different temperatures. However, the method has extremely complicated steps, a sample is torn off by using an adhesive tape, the sample is stuck on a clean silicon wafer, the glass-PDMS-PVA (triangle) is stuck on the clean silicon wafer through alignment of a transfer platform, the PVA film is torn off after heating and taking down, the PVA film with another thickness (square) is cut off, and the glass sheet-PVA (square) -PVA (triangle) is recombined and then aligned. In addition, the method needs to be heated immediately after two bonding, otherwise, a PVA film containing a sample cannot be left and a glass sheet cannot be taken down, so that a special two-dimensional material transfer platform must be purchased to realize the heating operation, and the common microscope and the displacement platform cannot meet the use requirement. In addition, two kinds of PVA (polyvinyl alcohol) with different thickness and concentration are required to be prepared, and then a fumbling process, a ratio adjustment technology and a spin coating technology are required to prepare the PVA film on the DVD. Special care must be taken in tearing the PVA film, otherwise it is prone to tearing or deformation. In addition, the silicon wafer only sticks part of the two-dimensional material from the adhesive tape randomly, the PVA film sticks part of the two-dimensional material from the silicon wafer randomly, and in actual operation, the PVA film has high randomness, low efficiency and low success rate.
In addition to the above method, a PDMS-assisted transfer method is also employed, which is to attach a two-dimensional material mechanically peeled off with an adhesive tape to PDMS by means of PDMS, and attach the PDMS to a glass slide, and transfer it using a transfer stage. The method has the defects of being only suitable for two-dimensional materials mechanically stripped by using an adhesive tape, having a narrow application range and being not applicable to two-dimensional materials grown by vapor deposition. In addition, in the method, the PDMS is also adhered with partial two-dimensional materials from the adhesive tape randomly, so that the sample in a specified certain area cannot be transferred successfully, and the method has high randomness and low efficiency in actual operation.
In addition to the disadvantages listed above, the above methods all require a hard base such as a glass sheet as a carrier, and when the robot arm descends, the transferred material is tightly attached to the target substrate, and the target substrate or glass sheet is easily crushed by a little careless.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide the method for accurately transferring the two-dimensional material, which has the advantages of few operation steps, simple operation, accurate fixed-point transfer and extremely high application value.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a method of accurately transferring two-dimensional material, comprising the steps of:
(1) Acquiring a two-dimensional material on a substrate;
(2) Spin-coating PMMA on the substrate in the step (1), and heating to solidify the PMMA to form a PMMA film, so that the two-dimensional material to be transferred is attached below the PMMA film;
(3) Separating the PMMA film attached with the two-dimensional material from the substrate, placing the substrate in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the surface of the PMMA film, to which the two-dimensional material is attached, faces outwards; the principle of adhesion of PMMA film by using transparent carrier is: after the PMMA film is rinsed in deionized water, water remains on the surface, and the PMMA film can be adhered to the transparent carrier by utilizing the surface tension effect of the water. The principle is similar to that of 'close fitting when two pieces of glass are watered';
(4) The transparent carrier attached with the PMMA film is reversely attached to a mechanical arm of a displacement table, and the mechanical arm is moved to transfer the transparent carrier to a target position of a target substrate under a microscope; and removing the transparent carrier after the moisture between the PMMA film and the transparent carrier is evaporated. And then removing the PMMA film on the target substrate, and only leaving the transferred two-dimensional material on the target substrate, so that the accurate transfer of the two-dimensional material can be realized.
Further, in the step (1), the method for obtaining the two-dimensional material on the substrate includes a vapor deposition method and a mechanical stripping method.
In a further scheme, in the step (2), the heating temperature is 80-120 ℃, and the heating time is 5-10min. The heating mode can be specifically 120 ℃ for 5 minutes, 100 ℃ for 8 minutes or 80 ℃ for 10 minutes, wherein the heating temperature and the heating time are not fixed, and the heating time can be flexibly adjusted according to the heating temperature.
Further, in the step (3), the method of separating the PMMA film having the two-dimensional material attached thereto from the substrate may be an etching method, an electrochemical bubble separation method or an ultrasonic bubble separation method. Wherein: the etching method is to dissolve the silicon dioxide oxide layer on the surface of the substrate by using hydrofluoric acid slow-release liquid or etching liquid such as potassium hydroxide, so that the PMMA film is separated from the substrate, for example, when a silicon wafer is selected as the substrate, the silicon dioxide oxide layer is arranged on the surface of the silicon wafer and can be reacted by the etching liquid, so that the PMMA film attached to the surface of the silicon wafer is separated from the silicon wafer; the electrochemical bubbling separation method is to construct an electrolytic cell by taking a substrate to be separated (a metal substrate such as gold foil) as a cathode, and the PMMA film is separated from the substrate by utilizing hydrogen generated on the gold surface in the reaction process; the ultrasonic bubbling method separation is that ultrasonic waves generated by an ultrasonic machine generate tiny bubbles between a two-dimensional material and a substrate, so that the PMMA film is separated from the substrate.
In a further aspect, in the step (3), the transparent carrier is a transparent substance with a certain hardness, preferably one of PET, PDMS, glass flakes, and the like.
The other object of the present invention is to provide an application of the method in preparing a two-dimensional material heterojunction, wherein in the step (4), another two-dimensional material is pre-placed on the target substrate, and the transferred two-dimensional material is attached to the original two-dimensional material at a fixed point, so that the two-dimensional material heterojunction is prepared. The heterojunction can regulate and control the properties of two-dimensional materials, obtain devices with excellent performance, can research novel physical properties, and is widely applied to basic researches of physics, materials, microelectronics and the like.
The third object of the present invention is to provide an application of the above-mentioned precise transfer method in preparing a device electrode, in the step (4), a bottom electrode is processed on a target substrate in advance, so that a two-dimensional material is fixed to be attached to the bottom electrode, and the device electrode is prepared in one step. In the prior art, expensive equipment such as a photoetching machine, a film plating machine and the like is needed for manufacturing the device by the two-dimensional material, the operation technical requirement is very high, and if the bottom electrode is manufactured on the target substrate in batches in advance, the two-dimensional material can be directly transferred to the bottom electrode to form the device by the method, so that the device manufacturing efficiency can be remarkably improved, and the input cost can be reduced.
Compared with the prior art, the beneficial effect of this patent is:
(1) The invention further optimizes the PMMA transfer technology based on the existing PMMA transfer technology, so that the PMMA transfer technology can be used for accurate transfer. Namely, by utilizing the surface tension of water, when the PMMA film surface has moisture, the PMMA film can be adhered to a transparent carrier, so that the subsequent accurate transfer is realized. The method provided by the invention has a wide application range, and is not only suitable for two-dimensional materials prepared by vapor deposition, but also suitable for two-dimensional materials prepared by mechanical stripping.
(2) The method provided by the invention can realize fixed-point transfer, namely, the two-dimensional material to be transferred can be accurately transferred to a certain fixed-point position, so that the method has excellent application value, and can play a great role in the fields of two-dimensional material heterojunction preparation and device electrode preparation.
(3) The method provided by the invention has high transfer efficiency, only partial materials can be transferred in the prior art, and the randomness is high; the method provided by the application can transfer all the two-dimensional materials on the substrate away, and has high transfer efficiency.
(4) According to the invention, the PMMA film attached with the two-dimensional material is transferred by the transparent carrier, and the transparent carrier such as PET or PDMS has certain hardness and certain elasticity, so that the target substrate is not damaged in the process of contacting the PMMA film with the target substrate in the descending process of the mobile mechanical arm; in the prior art, the method for transferring the hard substrate such as the glass sheet and the like can not judge whether the glass sheet is attached in place in time, and the glass sheet is possibly crushed or the substrate is possibly damaged when the mechanical arm descends.
(5) The method can finish the operation by utilizing two devices, namely a microscope and a displacement table, does not need to additionally purchase expensive devices, and has simple use equipment; and the used PMMA, PET and other materials are low in price and simple to operate.
(6) The method has the advantages that when the material is transferred, only the transparent carrier and the PMMA film are provided, the number of layers is small during transfer, and a plurality of preparation layers are not required to be adhered, so that the observation is clear.
Detailed Description
The invention will be further illustrated with reference to examples. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Some terms involved in the present invention are explained as follows:
vapor deposition technique: including chemical vapor deposition and physical vapor deposition, which means that films, single crystals, fibers, etc. are produced by gas-solid phase reactions by heating or other energy supply means.
Two-dimensional material: the material with electrons only moving on the nano scale of two dimensions has a great number of novel properties, not only has important significance in basic researches of physics, materials and the like, but also has wide application prospect in the fields of microelectronics, integrated circuits and the like. The two-dimensional materials described in the following examples and application examples are graphene prepared by a vapor deposition method, and the preparation method is a method existing in the art and is not described herein in detail.
Heterojunction: different two-dimensional materials are assembled together, layers are combined by weak van der Waals force, and the structure can effectively regulate and control the properties of target materials to manufacture high-performance electronic devices or research novel physical properties.
PMMA (polymethyl methacrylate) (poly methyl meth acrylate, PMMA for short), high transparency and low price.
PET: polyethylene terephthalate is a common resin in life, has excellent physical and mechanical properties in a wider temperature range, and has good creep resistance, fatigue resistance, friction resistance and dimensional stability.
PDMS: polydimethylsiloxane (polydimethyl siloxane), a high molecular weight organosilicon compound, is transparent and nontoxic.
Example 1
(1) The two-dimensional material is obtained by a chemical vapor deposition method, the substrate is a silicon wafer, and the surface of the silicon wafer is provided with a silicon dioxide oxide layer with the thickness of 300 nm;
(2) Using a spin coater to adsorb a silicon wafer, dripping PMMA, rotating at 2000 rpm for 30 seconds, and spin-coating for three times; taking the silicon wafer off the spin coater, placing the silicon wafer on a heating table, heating the silicon wafer at 120 ℃ for 5 minutes, and curing the silicon wafer to form a PMMA film, wherein the two-dimensional material is tightly attached below the PMMA film;
(3) The method comprises the steps of (1) taking a sodium hydroxide solution as etching liquid, putting a silicon wafer in the step (2) into the etching liquid, etching a silicon dioxide oxide layer on the surface layer of the silicon wafer by using the etching liquid, so that a PMMA film attached with a two-dimensional material is separated from the silicon wafer, clamping a substrate by using anti-corrosion tweezers to hold the PMMA film, putting the PMMA film into deionized water, and rinsing the etching liquid attached to the PMMA film so as not to influence a target substrate; taking PET as a transparent carrier, taking out the PMMA film by using PET (the surface of the PMMA film, to which the two-dimensional material sample is attached, faces outwards), and tightly attaching the PMMA film on the PET due to the tension of water because a certain amount of deionized water is arranged between the PMMA film and the PET;
(4) The PET (PMMA film and two-dimensional material) is reversely attached to a mechanical arm of a displacement table, wherein the reverse attachment means that one surface of the PET, which is attached with the PMMA film and the two-dimensional material, faces downwards (the same applies below), under a microscope, the mechanical arm X, Y is operated to enable the required two-dimensional material to be consistent with the target position on the target substrate, and the mechanical arm Z is operated to enable the required two-dimensional material on the PMMA to be attached to the target substrate; standing until the moisture between PMMA and PET is evaporated, and separating PET; then placing the target substrate on a heating table to heat for 5 minutes at 120 ℃ so that the transferred two-dimensional material is tightly attached to the target substrate; and finally, slowly placing the transferred target substrate into a beaker containing acetone, removing the PMMA film at the uppermost layer by using the acetone, and only leaving the transferred two-dimensional material on the target substrate, thereby realizing the accurate transfer of the two-dimensional material.
Application example 1
Preparation of two-dimensional material heterojunction
(1) The two-dimensional material is obtained by a chemical vapor deposition method, the substrate is a silicon wafer, and the surface of the silicon wafer is provided with a silicon dioxide oxide layer after 300 nm;
(2) Using a spin coater to adsorb a silicon wafer, dripping PMMA, rotating at 2000 rpm for 30 seconds, and spin-coating for three times; taking the silicon wafer off the spin coater, placing the silicon wafer on a heating table, heating the silicon wafer at 120 ℃ for 5 minutes, and curing the silicon wafer to form a PMMA film, wherein the two-dimensional material is tightly attached below the PMMA film;
(3) The method comprises the steps of (1) taking a sodium hydroxide solution as etching liquid, putting a silicon wafer in the step (2) into the etching liquid, etching a silicon dioxide oxide layer on the surface layer of the silicon wafer by using the etching liquid, so that a PMMA film attached with a two-dimensional material is separated from the silicon wafer, clamping a substrate by using anti-corrosion tweezers to hold the PMMA film, putting the PMMA film into deionized water, and rinsing the etching liquid attached around the PMMA film so as not to influence a target substrate; taking PET as a transparent carrier, taking out the PMMA film by using PET (the surface of the PMMA film, to which the two-dimensional material sample is attached, faces outwards), and tightly attaching the PMMA film on the PET due to the tension of water because a certain amount of deionized water is arranged between the PMMA film and the PET;
(4) The PET (attached with PMMA film and two-dimensional material) is reversely attached to a mechanical arm of a displacement table, under a microscope, the mechanical arm X, Y direction is operated to enable the required two-dimensional material to be consistent with the X, Y direction of the original two-dimensional material on the target substrate, and the mechanical arm Z direction is operated to enable the required two-dimensional material on PMMA to be attached to the original two-dimensional material on the target substrate; standing until the moisture between PMMA and PET is evaporated, and separating PET; then placing the target substrate on a heating table to heat for 5 minutes at 120 ℃ so that the transferred two-dimensional material is tightly attached to the original two-dimensional material; and finally, slowly placing the transferred target substrate into a beaker containing acetone, removing the PMMA film at the uppermost layer by using the acetone, and only leaving a heterojunction formed by the transferred two-dimensional material and the original two-dimensional material on the target substrate, thereby realizing the manufacture of the two-dimensional material heterojunction.
Application example 2
Preparation of device electrodes
(1) The two-dimensional material is obtained by a chemical vapor deposition method, the substrate is a silicon wafer, and the surface of the silicon wafer is provided with a silicon dioxide oxide layer after 300 nm;
(2) Using a spin coater to adsorb a silicon wafer, dripping PMMA, rotating at 2000 rpm for 30 seconds, and spin-coating for three times; taking the silicon wafer off the spin coater, placing the silicon wafer on a heating table, heating the silicon wafer at 120 ℃ for 5 minutes, and curing the silicon wafer to form a PMMA film, wherein the two-dimensional material is tightly attached below the PMMA film;
(3) The method comprises the steps of (1) taking a sodium hydroxide solution as etching liquid, putting a silicon wafer in the step (2) into the etching liquid, etching a silicon dioxide oxide layer on the surface layer of the silicon wafer by using the etching liquid, so that a PMMA film attached with a two-dimensional material is separated from the silicon wafer, clamping a substrate by using anti-corrosion tweezers to hold the PMMA film, putting the PMMA film into deionized water, and rinsing the etching liquid attached around the PMMA film so as not to influence a target substrate; taking PET as a transparent carrier, taking out the PMMA film by using PET (the surface of the PMMA film, to which the two-dimensional material sample is attached, faces outwards), and tightly attaching the PMMA film on the PET due to the tension of water because a certain amount of deionized water is arranged between the PMMA film and the PET;
(4) The PET (attached with PMMA film and two-dimensional material) is reversely attached to a mechanical arm of a displacement table, under a microscope, the mechanical arm X, Y direction is operated to enable the required two-dimensional material to be consistent with the X, Y direction of a bottom electrode on a target substrate, and the mechanical arm Z direction is operated to enable the required two-dimensional material on PMMA to be attached to the bottom electrode; standing until the moisture between PMMA and PET is evaporated, and separating PET; then placing the target substrate on a heating table, heating at 120 ℃ for 5 minutes, and tightly attaching the transferred two-dimensional material to a bottom electrode to prepare a device electrode in one step; and finally, slowly placing the transferred target substrate into a beaker containing acetone, removing the PMMA film at the uppermost layer by using the acetone, and only leaving a device made of a two-dimensional material and a bottom electrode on the target substrate.
Claims (6)
1. A method for precisely transferring a two-dimensional material is characterized by comprising the following steps: the method comprises the following steps:
(1) Acquiring a two-dimensional material on a substrate;
(2) Spin-coating PMMA on the substrate in the step (1), and heating to solidify the PMMA to form a PMMA film, so that the two-dimensional material is attached below the PMMA film;
(3) Separating the PMMA film attached with the two-dimensional material from the substrate, placing the substrate in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the surface of the PMMA film, to which the two-dimensional material is attached, faces outwards; the transparent carrier is PET;
(4) The transparent carrier attached with the PMMA film is reversely attached to a mechanical arm of a displacement table, and the mechanical arm is moved to transfer the transparent carrier to a target position of a target substrate under a microscope; after the moisture between the PMMA film and the transparent carrier is evaporated, the transparent carrier can be taken down; and then removing the PMMA film on the target substrate, and only leaving the transferred two-dimensional material on the target substrate, so that the accurate transfer of the two-dimensional material can be realized.
2. The method according to claim 1, characterized in that: in the step (1), the method for obtaining the two-dimensional material on the substrate includes a vapor deposition method and a mechanical stripping method.
3. The method according to claim 1, characterized in that: in the step (2), the heating temperature is 80-120 ℃ and the heating time is 5-10min.
4. The method according to claim 1, characterized in that: in the step (3), the method of separating the PMMA film to which the two-dimensional material is attached from the substrate is an etching method, an electrochemical bubble separation method, or an ultrasonic bubble separation method.
5. Use of the method according to any of claims 1-4 for the preparation of a two-dimensional material heterojunction, characterized in that: in the step (4), another two-dimensional material is pre-placed on the target substrate, and the transferred two-dimensional material is attached to the pre-placed another two-dimensional material at fixed points, so that a two-dimensional material heterojunction is prepared; the specific method comprises the following steps:
(1) Acquiring a two-dimensional material on a substrate;
(2) Spin-coating PMMA on the substrate in the step (1), and heating to solidify the PMMA to form a PMMA film, so that the two-dimensional material is attached below the PMMA film;
(3) Separating the PMMA film attached with the two-dimensional material from the substrate, placing the substrate in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the surface of the PMMA film, to which the two-dimensional material is attached, faces outwards;
(4) Reversely attaching the transparent carrier attached with the PMMA film on a mechanical arm of a displacement table, and then pre-placing another two-dimensional material on a target substrate; under a microscope, moving the mechanical arm to enable the two-dimensional material fixed point attached under the PMMA film to be attached to another two-dimensional material on the target substrate, and taking down the transparent carrier after the moisture between the PMMA film and the transparent carrier is evaporated; and then removing the PMMA film on the target substrate to finish the manufacture of the two-dimensional material heterojunction.
6. Use of the method according to any of claims 1-4 for the preparation of an electrode for a device, characterized in that: in the step (4), a bottom electrode is processed on a target substrate in advance, a two-dimensional material fixed point is attached to the bottom electrode, and a two-dimensional material device is prepared in one step, and the specific method comprises the following steps:
(1) Acquiring a two-dimensional material on a substrate;
(2) Spin-coating PMMA on the substrate in the step (1), and heating to solidify the PMMA to form a PMMA film, so that the two-dimensional material is attached below the PMMA film;
(3) Separating the PMMA film attached with the two-dimensional material from the substrate, placing the substrate in deionized water for rinsing, adhering the PMMA film by using a transparent carrier, and fishing out the PMMA film from the deionized water; when the PMMA film is fished out by the transparent carrier, the surface of the PMMA film, to which the two-dimensional material is attached, faces outwards;
(4) Reversely attaching the transparent carrier attached with the PMMA film on a mechanical arm of a displacement table, and then processing a bottom electrode on a target substrate in advance; under a microscope, a mechanical arm is moved to enable a two-dimensional material fixed point attached to the PMMA film to be attached to a bottom electrode on a target substrate, and the transparent carrier can be taken down after the moisture between the PMMA film and the transparent carrier is evaporated; the PMMA film on the target substrate is then removed, leaving only the device electrodes made of the transferred two-dimensional material and bottom electrode on the target substrate.
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| CN113337807A (en) * | 2021-05-12 | 2021-09-03 | 中国科学院物理研究所 | Method for preparing two-dimensional material |
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