CN103337449B - Method prepared by the transplanting of silicon nanowire array and simple Devices thereof - Google Patents
Method prepared by the transplanting of silicon nanowire array and simple Devices thereof Download PDFInfo
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Abstract
The invention discloses a kind of method prepared by transplanting of silicon nanowire array and simple Devices thereof, utilize porous silverskin prepared by cleaning silicon wafer as catalytic metal, silicon nanowire array is prepared by etching in hydrofluoric acid/hydrogen peroxide, under high-temperature vapor, oxidation forms silicon-silica nucleocapsid structure, put into the Ammonia aqueous solution again, stop that-Yin assists ammoniacal liquor to etch by silica, prepare the silicon nanowire array structure serving as a contrast desorption with silicon.The target substrate that recycling surface scribbles stickum is transplanted to realize nano-wire array; Or use megohmite insulant fix and support silicon nanowire array and as intermediate insulating layer, silicon nanowire array is transplanted to the flexible substrate that surface scribbles conductive adhesive material, cover another layer of conductive materials again, prepare the simple flexible turning circuit device with good ohmic contact.Method is simple to operate, and cost is low, can be used for large-scale production.
Description
Technical field
The present invention relates to a kind of silicon nanowire array device fabrication techniques, particularly relate to a kind of method prepared by transplanting of silicon nanowire array and simple Devices thereof.
Background technology
Silicon nanowire array, with its very large table body ratio, unique electronics and optical property, has important application prospect in photovoltaic, optical detection, transducer, optics and flexible electronic device.
The method preparing silicon nanowire array of the prior art mainly by physics or the method for chemistry, such as reactive ion etching and wet-chemical etching methods etc., the common ground of these methods is exactly that nano wire all grows on the substrate of rigidity, therefore seriously limits its range of application.So simple, the efficient silicon nanowire array implantation technique of development is vital.
Summary of the invention
The object of this invention is to provide a kind of method prepared by low cost, transplanting that is simple, silicon nanowire array efficiently and simple Devices thereof.
The object of the invention is to be achieved through the following technical solutions:
Method prepared by the transplanting of silicon nanowire array of the present invention and simple Devices thereof, comprises step:
A, silicon chip preliminary treatment: cleaning monocrystalline silicon piece;
The preparation of porous silverskin on B, silicon chip: silicon chip cleaned in steps A is put into silver nitrate and hydrofluoric acid mixed solution, leaves standstill deposition silverskin, obtains the silicon chip of surface with porous silverskin;
The preparation of silicon nanowire array on C, silicon chip: hydrofluoric acid is put into the silicon chip of porous silverskin in the surface obtained in step B and to leave standstill with hydrogen peroxide mixing etching solution and etch, obtain the surperficial silicon chip with silicon nanowire array structure;
The preparation of D, silicon-silica core-shell structure copolymer nanowire array structure: clean culture dish is put into the silicon chip of silicon nanowire array in the surface obtained in step C, water bath put into by culture dish, cover tank lid to steam, at the oxidized one deck silica of surface of silicon nanowires, obtain the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure;
E, preparation with the silicon nanowire array structure of silicon substrate desorption: the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure obtained in step D is put into mixing etching solution constant temperature, leaving standstill and etch of ammoniacal liquor and deionized water, obtain the silicon nanowire array structure with desorption of silicon slice, carry out step F or step G afterwards;
The transplanting of F, silicon nanowire array: be directly attached to surface with the silicon nanowire array structure of desorption of silicon slice have in the target substrate of stickum by obtained in step e, then peeled, silicon nanowire array structure is transplanted in target substrate;
G, the preparation of turning circuit device with good ohmic contact of simple flexibility: obtained with spin coating one deck styrene solution on the surface of the silicon nanowire array structure of desorption of silicon slice in step e, after styrene polymerization in silicon nanowire array and surface form one deck polystyrene film, the polystyrene of silicon nanowires top layer is fallen with plasma etching, silicon nanowires is made to expose head from polystyrene, put into hydrofluoric acid to soak with the etching solution that mixes of deionized water, to remove the outer field silica of nano wire head, then being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, leave standstill, dry, after elargol solidifies, take silicon substrate off, silicon nanowires has just been transplanted in flexible plastic substrate, then more same plasma etching and hydrofluoric acid treatment are done to the other end of the silicon nanowires be transplanted in flexible plastic substrate, make silicon nanowires same from polystyrene, expose head, applying one deck conductive silver glue more thereon or being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, prepare the simple flexible turning circuit device with good ohmic contact.
As seen from the above technical solution provided by the invention, method prepared by the transplanting of the silicon nanowire array that the embodiment of the present invention provides and simple Devices thereof, utilize porous silverskin prepared by cleaning silicon wafer as catalytic metal, silicon nanowire array is prepared by etching in hydrofluoric acid/hydrogen peroxide, under high-temperature vapor, oxidation forms silicon-silica nucleocapsid structure, put into the Ammonia aqueous solution again, stop that-Yin assists ammoniacal liquor to etch by silica, prepare the silicon nanowire array structure with silicon substrate desorption.The target substrate that recycling surface scribbles stickum is transplanted to realize nano-wire array; Or use megohmite insulant fix and support silicon nanowire array and as intermediate insulating layer, silicon nanowire array is transplanted to the flexible substrate that surface scribbles conductive adhesive material, cover another layer of conductive materials again, prepare the simple flexible turning circuit device with good ohmic contact.Method is simple to operate, and cost is low, can be used for large-scale production.
Accompanying drawing explanation
Fig. 1 is the migration process schematic diagram of silicon nanowire array in the embodiment of the present invention;
Fig. 1 g is the scanning electron microscope diagram sheet of the porous silverskin in the embodiment of the present invention, silicon chip deposited;
Fig. 1 h is the scanning electron microscope diagram sheet of silicon nanowire array structure in the embodiment of the present invention;
Fig. 1 i is the scanning electron microscope diagram sheet with the silicon nanowire array structure of substrate desorption in the embodiment of the present invention;
Fig. 1 j is the scanning electron microscope diagram sheet of the nanowire array structure be transplanted in the embodiment of the present invention in target substrate;
Fig. 2 a is the transmission electron micrograph of silicon nanometer root that is that prepare in the embodiment of the present invention and silicon substrate desorption;
Fig. 2 b is the electron diffraction diagram of the silicon nanometer root at A place in Fig. 2 a;
Fig. 2 c is the electron diffraction diagram of the silicon nanometer root at B place in Fig. 2 a;
Fig. 2 d is the electron diffraction diagram of the silicon nanometer root at C place in Fig. 2 a;
Fig. 3 is the simple flexible turning circuit device process schematic diagram with good ohmic contact of preparation in the embodiment of the present invention;
Fig. 3 e is through argon plasma etch in the embodiment of the present invention, exposes the scanning electron microscope diagram sheet of the nanowire array structure (in figure, nano wire head silica coating layer is also do not remove) of nano wire tip portion from polystyrene;
Fig. 3 f is transplanted to silicon nanowire array structure in flexible plastic substrate that surface scribbles elargol in the embodiment of the present invention, through argon plasma etch, head is exposed in nano wire top (bottom former silicon nanowires) after transplanting from polystyrene, and Surface coating fly silica also removed by hydrofluoric acid after scanning electron microscope diagram sheet;
Fig. 3 g is the scanning electron microscope diagram sheet of the silicon nanowire array structure (final device architecture) directly contacted with elargol to the two ends in flexible plastic substrate transplanted in the embodiment of the present invention;
Fig. 3 h is the I-V curve of the silicon nanowire array device that two ends final in the embodiment of the present invention directly contact with elargol.
Embodiment
To be described in further detail the embodiment of the present invention below.
Method prepared by the transplanting of silicon nanowire array of the present invention and simple Devices thereof, its preferably embodiment be:
Comprise step:
A, silicon chip preliminary treatment: cleaning monocrystalline silicon piece;
The preparation of porous silverskin on B, silicon chip: silicon chip cleaned in steps A is put into silver nitrate and hydrofluoric acid mixed solution, leaves standstill deposition silverskin, obtains the silicon chip of surface with porous silverskin;
The preparation of silicon nanowire array on C, silicon chip: hydrofluoric acid is put into the silicon chip of porous silverskin in the surface obtained in step B and to leave standstill with hydrogen peroxide mixing etching solution and etch, obtain the surperficial silicon chip with silicon nanowire array structure;
The preparation of D, silicon-silica core-shell structure copolymer nanowire array structure: clean culture dish is put into the silicon chip of silicon nanowire array in the surface obtained in step C, water bath put into by culture dish, cover tank lid to steam, at the oxidized one deck silica of surface of silicon nanowires, obtain the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure;
E, preparation with the silicon nanowire array structure of silicon substrate desorption: the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure obtained in step D is put into mixing etching solution constant temperature, leaving standstill and etch of ammoniacal liquor and deionized water, obtain the silicon nanowire array structure with desorption of silicon slice, carry out step F or step G afterwards;
The transplanting of F, silicon nanowire array: be directly attached to surface with the silicon nanowire array structure of desorption of silicon slice have in the target substrate of stickum by obtained in step e, then peeled, silicon nanowire array structure is transplanted in target substrate;
G, the preparation of turning circuit device with good ohmic contact of simple flexibility: obtained with spin coating one deck styrene solution on the surface of the silicon nanowire array structure of desorption of silicon slice in step e, after styrene polymerization in silicon nanowire array and surface form one deck polystyrene film, the polystyrene of silicon nanowires top layer is fallen with plasma etching, silicon nanowires is made to expose head from polystyrene, put into hydrofluoric acid to soak with the etching solution that mixes of deionized water, to remove the outer field silica of nano wire head, then being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, leave standstill, dry, after elargol solidifies, take silicon substrate off, silicon nanowires has just been transplanted in flexible plastic substrate, then more same plasma etching and hydrofluoric acid treatment are done to the other end of the silicon nanowires be transplanted in flexible plastic substrate, make silicon nanowires same from polystyrene, expose head, applying one deck conductive silver glue more thereon or being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, prepare the simple flexible turning circuit device with good ohmic contact.
Described steps A comprises:
First use acetone ultrasonic cleaning monocrystalline silicon piece, then use mass fraction 25%-28% ammoniacal liquor: mass fraction 30% hydrogen peroxide: the mixed liquor ultrasonic cleaning monocrystalline silicon piece of deionized water=1:1:5 volume ratio, then use deionized water ultrasonic cleaning monocrystalline silicon piece.
Described step B comprises:
0.085g silver nitrate and the 20ml mass fraction hydrofluoric acid that is 40% is added deionized water and is diluted to 100ml, after stirring, put into the silicon chip that steps A is cleaned, at room temperature 25 DEG C, leave standstill deposition silverskin 2min.
Described step C comprises:
Get 20ml mass fraction be 40% hydrofluoric acid and 4.1ml mass fraction be the hydrogen peroxide of 30%, the etching solution that deionized water is mixed with 100ml is added after mixing, etching 30min is left standstill at etching solution room temperature 25 DEG C is put into the silicon chip of porous silverskin in surface obtained in step B, and carry out accuracy controlling nanowire length by changing etching period, obtain the silicon chip of surface with silicon nanowire array structure.
Described step D comprises: clean culture dish is put into the silicon chip of silicon nanowire array in surface obtained in step C, the water bath of 70 DEG C put into by culture dish, cover tank lid, steam 48 hours, at the silica of the oxidized thin layer of surface of silicon nanowires, form silicon-silica core-shell structure copolymer nanowire array structure.
Described step e comprises: the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure prepared in step D is put into the ammoniacal liquor that mass fraction is 25 ~ 28%: the etching solution of deionized water=1:100 volume ratio, then the constant temperature water tank of 70 DEG C is put at once, leave standstill etching 10min, obtain the silicon nanowire array structure with desorption of silicon slice.
Described step F comprises: be transplanted to the nano wire top of the silicon nanowire array in target substrate in step e with one section of silica, silica top is porous silverskin, if do not need this layer of silverskin and silica, then removes with nitric acid and hydrofluoric acid.
In described step G, the process gas of plasma etching is argon gas, etching period is 30min, to comprise mass fraction be 40% hydrofluoric acid to the etching solution that mixes of hydrofluoric acid and deionized water: deionized water=1:20 volume ratio, in etching solution, soak time is 2min, be attached to the time of repose after on flexible plastic film that surface scribbles one deck conductive silver glue more than 24 hours, static conditions is 60 DEG C.
Method prepared by the transplanting of silicon nanowire array of the present invention and simple Devices thereof, it is a kind of low cost, simply, stop that-Yin assists the solution etches method of ammoniacal liquor etching method based on silica efficiently, use solution-deposition method, silicon chip is prepared one deck porous silverskin, utilize the silver-colored catalytic chemistry etching in hydrofluoric acid/hydrogen peroxide solution, silicon chip prepares silicon nanowire array structure, one deck silica diaphragm is prepared again at surface of silicon nanowires, put into the aqueous solution of ammoniacal liquor, ammoniacal liquor etching reaction is assisted by silver, prepare the silicon nanowire array structure with silicon substrate desorption, the attached silicon nanowire array structure of this pull-up can be transplanted to any surface easily and have on the substrate of stickum.And by using suitable conductive adhesive material and preparing intermediate insulating layer, achieve the simple flexible preparation with the turning circuit device of good ohmic contact.This method is simple to operate, and cost is low, can be used for large-scale production.
Silica in the present invention stops that-Yin assists ammoniacal liquor etching method can prepare silicon nanowire array structure serve as a contrast desorption with silicon, easily silicon nanowire array can be transplanted to any surface and scribble in the target substrate of binding agent (flexibility or inflexibility).And by simple process, the preparation of simple flexible device can be realized.The method does not need expensive experimental facilities, only need the silica barrier layer preparing suitable thickness, with the use of suitable ammoniacal liquor etchant concentration and bath temperature, that just can obtain Large-Area-Uniform with the silicon nanowire array structure being easy to transplant that is silicon substrate desorption.And by using suitable conductive adhesive material and preparing suitable intermediate insulating layer, realize the simple flexible preparation with the turning circuit device of good ohmic contact.
Feature of the present invention have following some:
The length of nano wire carries out accuracy controlling by the time etched in hydrofluoric acid/hydrogen peroxide solution.
Outside the silicon nanowire array structure of the easy transplanting of preparation, coated one deck thin layer of silicon oxide, is silicon-silica nucleocapsid structure.
In the desorption process of silicon nanowire array and substrate, the barrier effect that Surface Oxygen SiClx etches ammoniacal liquor and the catalytic action desorption to silicon nanometer of root silver to ammoniacal liquor etching most important.
Silicon nanowire array structure after desorption is connected against van der waals force with between substrate, transplants and is very easy to.
Silicon nanowires top after transplanting be one section of silica (former silicon nanowires root) and its top with one deck porous silverskin.
In the preparation process preparing silicon nanowires simple Devices, whether the quality of insulating barrier and the Contact of nano-wire array two ends and conductive adhesive material well directly affect the quality of device.
The target substrate of transfer is wide, can transfer to any surface and scribble on the substrate of binding agent.
Monocrystalline silicon piece utilance is high, can reuse.
The method cost is low, simple to operate, and not by the restriction preparing area, and very even.
Specific embodiment:
Device therefor: Ultrasound Instrument, constant temperature water tank, spin coating instrument and plasma cleaner.
Experimental procedure:
1, silicon chip preliminary treatment: use acetone successively, ammoniacal liquor (mass fraction 25%-28%): hydrogen peroxide (mass fraction 30%): deionized water=1:1:5(volume ratio) and deionized water ultrasonic cleaning monocrystalline silicon piece.
2, the preparation of porous silverskin on silicon chip: 0.5mmol(0.085g) silver nitrate (AgNO
3) and 0.46mol(20ml) hydrofluoric acid (HF, mass fraction is 40%), add deionized water and be diluted to 100ml, after stirring, put into the silicon chip that step 1 is cleaned, leave standstill deposition silverskin 2min(room temperature 25 DEG C).
3, the preparation of silicon nanowire array on silicon chip: prepare etching solution according to a certain ratio, get 0.46mol(20ml) hydrofluoric acid (HF, mass fraction is 40%) and 40mmol(4.1ml) hydrogen peroxide (H
2o
2, mass fraction is 30%), add the etching solution that deionized water is mixed with 100ml.The silicon chip with porous silverskin surperficial in step 2 is put into etching solution standing etching 30min(nanowire length and carrys out accuracy controlling by changing etching period) (room temperature 25 DEG C), obtain the silicon chip of surface with silicon nanowire array structure.
The preparation of 4, silicon-silica core-shell structure copolymer nanowire array structure: clean culture dish is put into the silicon chip of silicon nanowire array in the surface in step 3, the water bath of 70 DEG C put into by culture dish, cover tank lid, steam 48 hours, just at the silica of the oxidized thin layer of surface of silicon nanowires, form silicon-silica core-shell structure copolymer nanowire array structure.
5, with the preparation of the silicon nanowire array structure of silicon substrate desorption: the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure prepared in step 4 is put into ammoniacal liquor (NH
4hO) (mass fraction is 25 ~ 28%): deionized water=1:100(volume ratio) in etching solution, then put into the constant temperature water tank of 70 DEG C at once, leave standstill etching about 10min, just can obtain the silicon nanowire array structure with substrate desorption.
6, the transplanting of silicon nanowire array: the sample in step 5 is directly attached to surface and has in the target substrate of stickum, then peeled, just can by silicon nanowire array transplant in target substrate.And nano wire top (former silicon nanowires root) is with one section of silica, and silica top is porous silverskin.(certainly, if do not need this layer of silverskin and silica, also can remove with nitric acid and hydrofluoric acid).
7, the simple flexible preparation with the turning circuit device of good ohmic contact: spin coating one deck styrene solution on the surface of sample in steps of 5, after styrene polymerization can in silicon nanowire array and surface form one deck polystyrene film.Argon plasma etch 30min is to etch away the polystyrene of silicon nanowires top layer, silicon nanowires is made to expose head from polystyrene, put into hydrofluoric acid (mass fraction is 40%): deionized water=1:20(volume ratio) etching solution soaks 2min to remove the outer field silica of head nano wire, then being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, leave standstill more than 24 hours (can accelerate to dry under 60 DEG C of conditions), after elargol solidifies, take silicon substrate off, silicon nanowires has just been transplanted in flexible plastic substrate.Then more same plasma etching and hydrofluoric acid treatment are done to the other end of the silicon nanowires be transplanted in flexible substrate, make silicon nanowires same from polystyrene, expose head, apply another layer of conduction conductive silver glue more thereon, just prepare the turning circuit device with good ohmic contact of simple flexibility.
The effect of specific embodiment
Experimentation demonstration graph and scanning electron microscope analysis demonstrate process prepared by the transplanting of silicon nanowire array and simple Devices thereof.The silicon nanowire array structure that transmission electron micrograph and electron diffraction diagram demonstrate preparation is still monocrystalline.
Fig. 1 is the migration process schematic diagram of silicon nanowire array, in figure: (a) cleaning silicon wafer; B porous silverskin that () silicon chip deposits; (c) silicon nanowire array structure; The nanowire array structure of (d) silicon-silica nucleocapsid structure; The silicon nanowire array structure of (e) and substrate desorption; F () is attached to the nanowire array structure in the target substrate of surface band toughness material.Fig. 1 g is the scanning electron microscope diagram sheet of the porous silverskin that silicon chip deposits; Fig. 1 h is the scanning electron microscope diagram sheet of silicon nanowire array structure; Fig. 1 i is the scanning electron microscope diagram sheet with the silicon nanowire array structure of substrate desorption; Fig. 1 j is the scanning electron microscope diagram sheet of the nanowire array structure be transplanted in target substrate.
Fig. 2 a be preparation with the transmission electron micrograph of the silicon nanometer root of silicon substrate desorption, Fig. 2 b to Fig. 2 d is the electron diffraction diagram of its root different parts.Fig. 2 b, 2c, 2d prove to obtain with the silicon nanowires of substrate desorption except root top, the main body of line is still monocrystalline.
Fig. 3 is the simple flexible turning circuit device process schematic diagram with good ohmic contact of preparation, in figure: (a) submergence in polystyrene with the silicon nanowire array structure of substrate desorption; B (), through argon plasma etch, exposes the nanowire array structure of nano wire tip portion from polystyrene, Fig. 3 e is scanning electron microscope diagram sheet (in figure, nano wire head silica coating layer is not for also removing) now; C () is attached to surface and scribbles nanowire array structure in the plastic of conductive silver glue; D () is the transplanted silicon nanowire array structure (final device architecture) all directly contacted with elargol to the two ends in flexible plastic substrate, Fig. 3 g is scanning electron microscope diagram sheet now; Fig. 3 f is transplanted to silicon nanowire array structure in flexible plastic substrate that surface scribbles elargol, through argon plasma etch, head is exposed in nano wire top (bottom former silicon nanowires) after transplanting from polystyrene, and Surface coating flies silica is also eliminated by hydrofluoric acid, be 45 ° of visual angle enlarged drawings on top in figure; Fig. 3 h is the I-V curve of the silicon nanowire array device that final two ends directly contact with elargol, proves it is good ohmic contact between silicon nanowires and elargol in device.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (7)
1. the method prepared of the transplanting of silicon nanowire array and simple Devices thereof, is characterized in that, comprise step:
A, silicon chip preliminary treatment: cleaning monocrystalline silicon piece;
The preparation of porous silverskin on B, silicon chip: silicon chip cleaned in steps A is put into silver nitrate and hydrofluoric acid mixed solution, leaves standstill deposition silverskin, obtains the silicon chip of surface with porous silverskin;
The preparation of silicon nanowire array on C, silicon chip: hydrofluoric acid is put into the silicon chip of porous silverskin in the surface obtained in step B and to leave standstill with hydrogen peroxide mixing etching solution and etch, obtain the surperficial silicon chip with silicon nanowire array structure;
The preparation of D, silicon-silica core-shell structure copolymer nanowire array structure: clean culture dish is put into the silicon chip of silicon nanowire array in the surface obtained in step C, water bath put into by culture dish, cover tank lid to steam, at the oxidized one deck silica of surface of silicon nanowires, obtain the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure;
E, preparation with the silicon nanowire array structure of silicon substrate desorption: the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure obtained in step D is put into mixing etching solution constant temperature, leaving standstill and etch of ammoniacal liquor and deionized water, obtain the silicon nanowire array structure with desorption of silicon slice, carry out step F or step G afterwards;
The transplanting of F, silicon nanowire array: be directly attached to surface with the silicon nanowire array structure of desorption of silicon slice have in the target substrate of stickum by obtained in step e, then peeled, silicon nanowire array structure is transplanted in target substrate;
G, the preparation of turning circuit device with good ohmic contact of simple flexibility: obtained with spin coating one deck styrene solution on the surface of the silicon nanowire array structure of desorption of silicon slice in step e, after styrene polymerization in silicon nanowire array and surface form one deck polystyrene film, the polystyrene of silicon nanowires top layer is fallen with plasma etching, silicon nanowires is made to expose head from polystyrene, put into hydrofluoric acid to soak with the etching solution that mixes of deionized water, to remove the outer field silica of nano wire head, then being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, leave standstill, dry, after elargol solidifies, take silicon substrate off, silicon nanowires has just been transplanted in flexible plastic substrate, then more same plasma etching and hydrofluoric acid treatment are done to the other end of the silicon nanowires be transplanted in flexible plastic substrate, make silicon nanowires same from polystyrene, expose head, applying one deck conductive silver glue more thereon or being attached to surface scribbles on the flexible plastic film of one deck conductive silver glue, prepare the simple flexible turning circuit device with good ohmic contact,
Described step D comprises: clean culture dish is put into the silicon chip of silicon nanowire array in surface obtained in step C, the water bath of 70 DEG C put into by culture dish, cover tank lid, steam 48 hours, at the silica of the oxidized thin layer of surface of silicon nanowires, form silicon-silica core-shell structure copolymer nanowire array structure.
2. the method prepared of the transplanting of silicon nanowire array according to claim 1 and simple Devices thereof, it is characterized in that, described steps A comprises:
First use acetone ultrasonic cleaning monocrystalline silicon piece, then use mass fraction 25%-28% ammoniacal liquor: mass fraction 30% hydrogen peroxide: the mixed liquor ultrasonic cleaning monocrystalline silicon piece of deionized water=1:1:5 volume ratio, then use deionized water ultrasonic cleaning monocrystalline silicon piece.
3. the method prepared of the transplanting of silicon nanowire array according to claim 2 and simple Devices thereof, it is characterized in that, described step B comprises:
0.085g silver nitrate and the 20ml mass fraction hydrofluoric acid that is 40% is added deionized water and is diluted to 100ml, after stirring, put into the silicon chip that steps A is cleaned, at room temperature 25 DEG C, leave standstill deposition silverskin 2min.
4. the method prepared of the transplanting of silicon nanowire array according to claim 3 and simple Devices thereof, it is characterized in that, described step C comprises:
Get 20ml mass fraction be 40% hydrofluoric acid and 4.1ml mass fraction be the hydrogen peroxide of 30%, the etching solution that deionized water is mixed with 100ml is added after mixing, etching is left standstill at etching solution room temperature 25 DEG C is put into the silicon chip of porous silverskin in surface obtained in step B, and carry out accuracy controlling nanowire length by changing etching period, obtain the silicon chip of surface with silicon nanowire array structure.
5. the method prepared of the transplanting of silicon nanowire array according to claim 4 and simple Devices thereof, it is characterized in that, described step e comprises: the silicon chip with silicon-silica core-shell structure copolymer nanowire array structure prepared in step D is put into the ammoniacal liquor that mass fraction is 25 ~ 28%: the etching solution of deionized water=1:100 volume ratio, then the constant temperature water tank of 70 DEG C is put at once, leave standstill etching 10min, obtain the silicon nanowire array structure with desorption of silicon slice.
6. the method prepared of the transplanting of silicon nanowire array according to claim 5 and simple Devices thereof, it is characterized in that, described step F comprises: be transplanted to the nano wire top of the silicon nanowire array in target substrate in step e with one section of silica, silica top is porous silverskin.
7. the method prepared of the transplanting of silicon nanowire array according to claim 6 and simple Devices thereof, it is characterized in that, in described step G, the process gas of plasma etching is argon gas, etching period is 30min, to comprise mass fraction be 40% hydrofluoric acid to the etching solution that mixes of hydrofluoric acid and deionized water: deionized water=1:20 volume ratio, in etching solution, soak time is 2min, be attached to the time of repose after on flexible plastic film that surface scribbles one deck conductive silver glue more than 24 hours, static conditions is 60 DEG C.
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| US11213791B2 (en) | 2015-10-23 | 2022-01-04 | Hewlett-Packard Development Company, L.P. | Nano wire microporous structure |
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| CN108597986A (en) * | 2018-05-02 | 2018-09-28 | 厦门大学深圳研究院 | A kind of preparation method of the silicon nanowire array based on pre-oxidation treatment |
| CN110129775B (en) * | 2019-05-17 | 2021-02-23 | 中北大学 | Method for forming Ag particles on silicon nanowire array |
| CN112028077B (en) * | 2020-09-15 | 2022-04-05 | 北京师范大学 | Method for forming cracks in silicon nanowires and silicon nanowire array |
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| KR101400686B1 (en) * | 2009-09-24 | 2014-05-29 | 한국과학기술원 | 3-Dimensional Nano Structures Composed of Nano Materials Grown on Mechanically Compliant Graphene Films and Method for Preparing the Same |
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| CN102583384A (en) * | 2012-03-19 | 2012-07-18 | 浙江大学 | Method for transferring arrayed silicon nanowires |
| CN102701138A (en) * | 2012-04-27 | 2012-10-03 | 苏州大学 | Large-area layering etching and transferring method of auxiliary metal silicon nanometer line array |
| CN103011181A (en) * | 2012-12-14 | 2013-04-03 | 中国科学院合肥物质科学研究院 | Stripping-transplanting method of silicon dioxide nanowire array |
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