CN103794712A - Method for improving radiating efficiency of light-emitting device chip - Google Patents

Method for improving radiating efficiency of light-emitting device chip Download PDF

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Publication number
CN103794712A
CN103794712A CN201410050418.3A CN201410050418A CN103794712A CN 103794712 A CN103794712 A CN 103794712A CN 201410050418 A CN201410050418 A CN 201410050418A CN 103794712 A CN103794712 A CN 103794712A
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CN
China
Prior art keywords
described
step
etching
device chip
method
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CN201410050418.3A
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Chinese (zh)
Inventor
廉鹏
李有群
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马鞍山太时芯光科技有限公司
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Priority to CN201410050418.3A priority Critical patent/CN103794712A/en
Publication of CN103794712A publication Critical patent/CN103794712A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • H01L33/0079Processes for devices with an active region comprising only III-V compounds wafer bonding or at least partial removal of the growth substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Abstract

The invention provides a method for improving the radiating efficiency of a light-emitting device chip. The method includes the following steps: sequentially growing a preset conversion layer, an epitaxial layer N area, an active area and an epitaxial layer P area on a grown substrate in an epitaxial mode, carrying out BeAu evaporating, annealing, photoetching and etching to manufacture a P electrode, corroding the preset conversion layer through corrosive liquid, reusing the grown substrate after surface processing is carried out on the grown substrate, carrying out GeAu evaporating, photoetching and etching on the epitaxial layer N area after surface processing is carried out on the epitaxial layer N area to manufacture an N electrode, manufacturing a dielectric layer and a silver mirror through deposition, photoetching, etching and evaporating, and manufacturing a copper substrate in an electroplating mode. According to the method, the radiating performance can be improved through a reflecting substrate, meanwhile, the grown substrate can be repeatedly used, As of the grown substrate can not be taken into the follow-up technological process for manufacturing a light-emitting device, the production cost is reduced, and the obvious technical advancement and the good economic benefits are achieved.

Description

A kind of method that improves luminescent device chip cooling efficiency

Technical field

The present invention relates to LED field, refer to especially a kind of method that improves luminescent device chip cooling efficiency.

Background technology

In the preparation process of existing luminescent device chip, by disposable growth substrates use, or it is directly formed to product as the substrate of chip, or will after its wear down, form product with chip.Growth substrates is mostly as the part of chip product.

The conventional reddish yellow optical chip growth substrates using is GaAs at present, uses the chip product of this growth substrates can contain arsenic.In the preparation process of chip that uses this growth substrates, if applied growth substrates reduction process, in industrial wastewater, will contain GaAs particle, increase the pollution of industrial wastewater, improved the cost of pollutant discharge of enterprise and waste water treatment simultaneously.Because the GaAs capacity of heat transmission is poor, the radiating efficiency of the chip that impact is formed.

Summary of the invention

The present invention proposes a kind of method that improves luminescent device chip cooling efficiency, has solved in prior art the problem of the impact of growth substrates on luminescent device chip cooling efficiency in prior art.

Technical scheme of the present invention is achieved in that a kind of method that improves luminescent device chip cooling efficiency, comprises the steps:

A) growth substrates successively epitaxial growth form preset conversion layer, epitaxial loayer N district, active area and epitaxial loayer P district;

B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode;

C) utilize the described preset conversion layer of corrosive liquid corrosion through step b) gained epitaxial wafer;

D) after growth substrates process surface treatment step described in step c) gained, recycle;

E) after process surface treatment step in epitaxial loayer N district described in step c) gained, carry out evaporation GeAu, photoetching and etching and make N electrode;

F) step e) gained epitaxial wafer is prepared to dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.

Preferably, described annealing is carried out in the temperature range of 450 ℃~500 ℃; The time range of described annealing is 5min~20min.

Preferably, described etching is specially dry etching or wet etching, with optionally and/or anisotropic etching method carry out; Described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.

Preferably, described dielectric layer, described silver mirror and described copper substrate form reflective; Described preset conversion layer can be converted to described reflective by described growth substrates.

Preferably, described dielectric layer comprises SiO 2, ITO or Si 3n 4, described copper substrate thickness range is 70 μ m~150 μ m.

Preferably, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.

Preferably, described growth substrates comprises GaAs.

Preferably, described preset conversion layer comprises AlAs.

Beneficial effect of the present invention is:

1) reflective has good heat dispersion;

2) growth substrates can reuse, and saves cost;

3) As of growth substrates can not bring subsequent technique flow process prepared by luminescent device into, reduces the pollution control cost of industrial wastewater.

Accompanying drawing explanation

In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.

Fig. 1 is step a) resulting structures schematic diagram of the present invention;

Fig. 2 is the schematic flow sheet of an a kind of embodiment of method who improves luminescent device chip cooling efficiency of the present invention;

Fig. 3 is step c) resulting structures schematic diagram of the present invention;

Fig. 4 is step f) resulting structures schematic diagram of the present invention;

In figure:

1, growth substrates; 2, preset conversion layer; 3, epitaxial loayer N district; 4, active area; 5, epitaxial loayer P district; 6, P electrode; 7, N electrode; 8, dielectric layer; 9, silver mirror; 10, copper substrate.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.

Embodiment 1

As shown in Fig. 1~4, a kind of method that improves luminescent device chip cooling efficiency of the present invention, comprises the steps:

A) the growth substrates 1 preset conversion layer 2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;

B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode 6;

C) utilize corrosive liquid to corrode preset conversion layer 2 through step b) gained epitaxial wafer;

D) after step c) gained growth substrates 1 process surface treatment step, recycle;

E) after step c) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 7;

F) step e) gained epitaxial wafer is prepared to dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepare copper substrate 10 by plating mode.

Before step b), first carry out cleaning operation.

Annealing is carried out at 450 ℃ of temperature; The time of annealing is 5min.

Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and reflective forms by the conversion regime of growth substrates 1.

Growth substrates 1 comprises preset conversion layer 2; Preset conversion layer 2 can be converted to reflective by growth substrates 1; Dielectric layer 8 and silver mirror 9 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 10 is prepared by plating mode, and dielectric layer 8 comprises SiO 2, copper substrate 10 thickness are 70 μ m.

Preset conversion layer 2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially HF.Growth substrates 1 comprises GaAs; Preset conversion layer 2 comprises AlAs.

Lithographic method is specially dry etching, carries out by etching method optionally; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step before polishing step, and polishing step is specially chemical polishing; Cleaning step is specially corrosive liquid and cleans; Detecting step is specially smoothness detection and surface cleanness detects.

Embodiment 2

As shown in Fig. 1~4, a kind of method that improves luminescent device chip cooling efficiency of the present invention, comprises the steps:

A) the growth substrates 1 preset conversion layer 2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;

B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode 6;

C) utilize corrosive liquid to corrode preset conversion layer 2 through step b) gained epitaxial wafer;

D) after step c) gained growth substrates 1 process surface treatment step, recycle;

E) after step c) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 7;

F) step e) gained epitaxial wafer is prepared to dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepare copper substrate 10 by plating mode.

Before step b), first carry out cleaning operation.

Annealing is carried out at 500 ℃ of temperature; The time of annealing is 15min.

Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and reflective forms by the conversion regime of growth substrates 1.

Growth substrates 1 comprises preset conversion layer 2; Preset conversion layer 2 can be converted to reflective by growth substrates 1; Dielectric layer 8 and silver mirror 9 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 10 is prepared by plating mode, and dielectric layer 8 comprises ITO, and copper substrate 10 thickness are 150 μ m.

Preset conversion layer 2 can be corroded liquid selectivity eliminate; Corrosive liquid is specially BOE.Growth substrates 1 comprises GaAs; Preset conversion layer 2 comprises AlAs.

Lithographic method is specially wet etching, carries out by anisotropic etching method; Surface treatment step comprises polishing step, detecting step and is positioned at the cleaning step after polishing step, and polishing step is specially mechanical polishing; Cleaning step is specially water and cleans; Detecting step is specially smoothness detection and surface cleanness detects.

Embodiment 3

As shown in Fig. 1~4, a kind of method that improves luminescent device chip cooling efficiency of the present invention, comprises the steps:

A) the growth substrates 1 preset conversion layer 2 of epitaxial growth, epitaxial loayer N district 3, active area 4 and epitaxial loayer P district 5 successively;

B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode 6;

C) utilize corrosive liquid to corrode preset conversion layer 2 through step b) gained epitaxial wafer;

D) after step c) gained growth substrates 1 process surface treatment step, recycle;

E) after step c) gained epitaxial loayer N district 3 process surface treatment step, carry out evaporation GeAu, photoetching and etching and make N electrode 7;

F) step e) gained epitaxial wafer is prepared to dielectric layer 8 and silver mirror 9 by deposition, photoetching, etching and evaporation, prepare copper substrate 10 by plating mode.

Before step b), first carry out cleaning operation.

Annealing is carried out at 480 ℃ of temperature; The time of annealing is 20min.

Reflective comprises dielectric layer 8, silver mirror 9 and copper substrate 10, and reflective forms by the conversion regime of growth substrates 1.

Growth substrates 1 comprises preset conversion layer 2; Preset conversion layer 2 can be converted to reflective by growth substrates 1; Dielectric layer 8 and silver mirror 9 are by deposition, photoetching, etching and evaporation preparation, and copper substrate 10 is prepared by plating mode, and dielectric layer 8 comprises Si 3n 4, copper substrate 10 thickness are 120 μ m.

Lithographic method is specially dry etching, carries out by etching method optionally; Surface treatment step comprises detecting step and cleaning step; Cleaning step is specially corrosive liquid cleaning or water cleans; Detecting step is specially smoothness detection and surface cleanness detects.

In above embodiment, reflective of the present invention adopts copper substrate, and the thermal conductivity of Cu is 400W/mK, and growth substrates 1 adopts GaAs, the thermal conductivity of GaAs is 55W/mK, and above data comparative result shows, the present invention can realize the effect of the radiating efficiency that improves luminescent device chip.

The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (8)

1. a method that improves luminescent device chip cooling efficiency, is characterized in that, comprises the steps:
A) growth substrates successively epitaxial growth form preset conversion layer, epitaxial loayer N district, active area and epitaxial loayer P district;
B) carry out evaporation BeAu, annealing, photoetching and etching through step a) gained epitaxial wafer and make P electrode;
C) utilize the described preset conversion layer of corrosive liquid corrosion through step b) gained epitaxial wafer;
D) after growth substrates process surface treatment step described in step c) gained, recycle;
E) after process surface treatment step in epitaxial loayer N district described in step c) gained, carry out evaporation GeAu, photoetching and etching and make N electrode;
F) step e) gained epitaxial wafer is prepared to dielectric layer and silver mirror by deposition, photoetching, etching and evaporation, prepare copper substrate by plating mode.
2. a kind of method that improves luminescent device chip cooling efficiency according to claim 1, is characterized in that, described annealing is carried out in the temperature range of 450 ℃~500 ℃; The time range of described annealing is 5min~20min.
3. a kind of method that improves luminescent device chip cooling efficiency according to claim 2, is characterized in that, described etching is specially dry etching or wet etching, with optionally and/or anisotropic etching method carry out; Described surface treatment step comprises at the most polishing step, detecting step and is positioned at the cleaning step before or after described polishing step, and described polishing step is specially chemical polishing or mechanical polishing; Described cleaning step is specially corrosive liquid cleaning or water cleans; Described detecting step is specially smoothness detection and surface cleanness detects.
4. a kind of method that improves luminescent device chip cooling efficiency according to claim 3, is characterized in that, described dielectric layer, described silver mirror and described copper substrate form reflective; Described preset conversion layer can be converted to described reflective by described growth substrates.
5. a kind of method that improves luminescent device chip cooling efficiency according to claim 4, is characterized in that, described dielectric layer comprises SiO 2, ITO or Si 3n 4, described copper substrate thickness range is 70 μ m~150 μ m.
6. a kind of luminescent device chip according to claim 1, is characterized in that, described preset conversion layer can be corroded liquid selectivity eliminate; Described corrosive liquid is specially HF or BOE.
7. according to a kind of method that improves luminescent device chip cooling efficiency described in claim 1~7 any one, it is characterized in that, described growth substrates comprises GaAs.
8. according to a kind of method that improves luminescent device chip cooling efficiency described in claim 1~7 any one, it is characterized in that, described preset conversion layer comprises AlAs.
CN201410050418.3A 2014-02-13 2014-02-13 Method for improving radiating efficiency of light-emitting device chip CN103794712A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111667A1 (en) * 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
CN1667849A (en) * 2004-03-10 2005-09-14 信越半导体株式会社 The light emitting device and manufacturing method
CN101515614A (en) * 2008-02-20 2009-08-26 日立电线株式会社 Semiconductor light-emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030111667A1 (en) * 2001-12-13 2003-06-19 Schubert E. Fred Light-emitting diode with planar omni-directional reflector
CN1667849A (en) * 2004-03-10 2005-09-14 信越半导体株式会社 The light emitting device and manufacturing method
CN101515614A (en) * 2008-02-20 2009-08-26 日立电线株式会社 Semiconductor light-emitting device

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Application publication date: 20140514