TW513819B - LED capable of increasing the brightness and the fabrication method thereof - Google Patents

Abstract

The present invention relates to an LED capable of increasing the brightness and the fabrication method thereof, mainly by removing part of the volume of the highly carrier-doped layer that has the disadvantage of absorbing the light intensity, and which is naturally formed on the bottom side during the growth of LED epitaxial layer, so that a spacing region is formed. A translucent material layer is filled into the spacing region for the projection of light path. A conductive contact layer is disposed on the part of volume other than the un-removed high-carrier-doped layer for planning the conduction and current flowing path, thereby achieving the purpose of distributing the operating current evenly in the LED epitaxial layer and emitting light, and greatly increasing the light-emitting intensity in the LED device.

Description

The invention relates to a light-emitting diode capable of improving luminous brightness and a method of '4', which is mainly to remove the high-carrier doped dioxin sub-volume of the bottom side of the LED epitaxial layer to become an empty compartment. And in the empty space, the light substance layer is filled, which facilitates the projection of the light path and can greatly improve the luminous efficacy in the LED element. Light-Emitting Diode (LED; Light-Emitting Diode) has the characteristics and advantages of long life, small size, low heat generation, low power consumption, fast response speed, and single-color light emission, since the 1960s Since its development, it has been widely used in computer peripherals, clock displays, instruments and meters, as well as in communication, information, and consumer electronics. Especially in recent years, due to the development of high-brightness light-emitting diode technology, the application of LEDs has moved from indoor to outdoor. The wide range of applications has to be impressive, but when LEDs are used outdoors, their high-brightness characteristics are Must be required and basic. In order to effectively improve the luminous brightness of light-emitting diode LEDs, the industry has revealed many novel and valuable product new technologies, such as "SEMICONDUCTOR LIGHT EMITTING DEVICE" disclosed by US Patent No. 5,153,889 and disclosed by Kabushiki Kaisha Toshiba. As shown in Figure 1

This means that an LED epitaxial layer including at least an upper limiting layer 17, a light emitting active layer 16, and a lower limiting layer 15 is provided with a current diffusion layer 18 on the LED epitaxial layer. There is a current blocking layer 100 which is insulated and can plan the working current to move to both sides, and a reflective layer 1 3 which can reflect the projection light source is provided between the limiting layer 15 under the LED epitaxial layer and the substrate 11. Of course, it can be on the substrate A lower electrode 1 02 is provided on the bottom side of 11 and a top side of the current diffusion layer 18

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A pair of counter electrodes 1 ο 1. Although, the above conventional structure can be effectively achieved by using a light-reflective layer, a 100 s * layer, and a reflective layer 13: power and electricity: 1318, current blocking, it still has the following shortcomings ... . However, when the T surface is close to the substrate, it cannot be effectively overcome;

2. L] D epitaxial layer is limited by the choice of its material, and must grow with the surface of its second crystal lattice. However, the material characteristics of some substrates are not the same as that of the substrate. For example, the GaAS substrate will absorb light, which will reduce 7G light emitting brightness' and the GaP substrate itself is orange, which will cause the problem of luminous chromaticity; and 3. the current blocking layer (100) is quite complicated to manufacture, and it must be aligned with the counter electrode (101) The bottom end is not flexible in design and too troublesome in the manufacturing process. For this reason, the industry has developed the concept of replacing the temporary substrate with a permanent substrate in response to the above disadvantages, such as U.S. Patent Nos. 6, 28, 6, 9 and 9,

Visual Photonics Epitaxy Co., Ltd., revealed "LIGHT

EMITTING DIODE WITH A PERMANENT SUBSTRATE OF TRANS PARENT GLASS OR QUARTZ AND THE METHOD FOR MANUFACT UR I NG THE SAME ", or US Application No. 09/384, 053," LIGHT EMITTING DIODE WITH ENHANCED "applied by the applicant

Page 7 513819 V. Description of the Invention (3) BRIGHTNESS AND METHOD FOR MANUFACTURING THE SAME j has proposed various different solutions to this problem.

Please refer to FIG. 2, which is the main structure disclosed in US Patent No. 6, 258, 699, which is mainly formed by first forming a planar LED epitaxial layer (light emitting region) 26 on a temporary substrate made of GaAs or InP. The substrate is then peeled off and removed temporarily; and a transparent glass or quartz is selected as a permanent substrate 21, and a metal adhesive 2 4 is formed on the top layer of the permanent substrate 21 to adhere to the flat LED stupid crystal. The bottom layer of the layer 26; and a metal reflective layer 23 can be provided on the bottom layer of the permanent substrate 21 so that when the two electrodes 201 and 202 on the plane of the planar LED epitaxial layer 26 are energized and emit light, the pN interface projects down. The light source can penetrate transparent glass or quartz and be reflected by the metal reflective layer 23, thereby achieving the effect of improving the luminous brightness. However, the above-mentioned light-emitting diode structure still has the following disadvantages: 1. The high-carrier doped layer 265 of the LED epitaxial layer on the bottom side cannot be effectively solved, which is extremely important for the brightness of the entire LED το component. 2. The reflection light source still needs to penetrate the permanent substrate of glass or quartz. The light path required by the reflection light source is too long, which is not conducive to the improvement of light emission brightness.

3. The reflective layer is located on the bottom side of the substrate, so the permanent substrate will be made of a light-transmissive 2 material, which effectively excludes the use of intangible restrictions on materials and product methods, and does not produce a life span of 4. The high temperature caused by the operation of the LED stupid layer layer only harms the reliability of the device and reduces the threat. Therefore, how to design a kind that can effectively solve the disadvantages of the conventional structure

513819 V. Description of the invention (4) The light-emitting diode can not only effectively improve the luminous brightness, but also maintain the reliability and service life of the components. These are the focus of the invention. Rhenium is the main object of the present invention, which is to provide a light-emitting diode that can improve the luminous brightness. It will remove part of the volume of the high-carrier doped layer on the bottom side of the LED epitaxial layer and fill it with a light-transmitting material layer The removed position of the high-carrier doped layer can not only effectively solve many regrets caused by the high-carrier doped layer, but also effectively improve the luminous brightness of the device.

A secondary object of the present invention is to provide a light-emitting diode capable of improving light-emitting brightness. A permanent substrate is used instead of a temporary substrate for the growth of an epitaxial layer of LEDs. Therefore, an appropriate conductive, thermal Or the material of changing the color light is the permanent substrate of the LED device, which not only expands the scope of application, but also can effectively improve the reliability and service life of the device. Another purpose of this month is to provide a 221 that can improve the luminous brightness. The pole body, using the position of the metal contact point, can effectively plan the industrial motor = 7 moving path and density, which can not only effectively solve the problem of current congestion, but also effectively improve the luminous brightness effect.

Another purpose of I # is to provide an / ed ββλ method that can increase the luminous brightness, which can effectively solve many of the two disadvantages by using simple process changes, not only for low-cost spenders. Production can also effectively improve product yield and reduce cost. Another purpose of Maoming is to provide a method that can improve the luminous brightness.

513819 V. Description of the invention (5) 'Not only applicable to upright light-emitting diodes, but also to produce σ μ leaf dust and light-emitting diodes, which are not only suitable for many types and are beneficial to the house αα e. It is also convenient for selecting appropriate permanent substrates .功 曦 Κί #The reviewing committee ’s understanding of the structural features of the present invention and the Sit achieved by them ::::: I would like to refer to the preferred embodiment diagrams and first, please refer to FIGS. 3A to 3 (? The invention is a cross-sectional view of the structure of the manufacturing process; please refer to the drawings. The main production method of the present invention includes the use of ordinary splashing or steaming techniques, including the following: The layer 36 and the upper confinement layer 3? 2Led epitaxial layer are formed on a temporary substrate 31 with a lattice constant. Of course, the: led epitaxial layer is convenient for the growth on the temporary substrate 35, and is on the bottom of the LED matri layer There is still a high-carrier doped layer 355 at the side position that will hinder the light-emitting brightness projection effect, and a current diffusion layer 33 is also provided on the top side of the upper confinement layer 37, as shown in FIG. 38; on the current diffusion layer 33 A pair of facing electrodes 39 are provided on the top side of the surface, and the temporary substrate (31) is peeled off, as shown in Fig. 3b. Doped with _55 ... in the high carrier, a plurality of metals, alloys or other Conductive contact layer 41 made of a material with conductive properties, each conductive contact It will be the work of the element = current conduction, so it can be formed on the bottom side of the high-carrier doped layer 355 in a small but large number of ways to plan the working current flow path and solve the problem of current congestion. Page 513819

'As shown in FIG. 3C; using various conventional techniques such as time lapse, a part of the volume of the high-carrier doped layer 355 which is not exposed to the conductive contact layer 41 and exposed to the outside is subjected to a setting process and the volume is shifted. Division, so that it becomes an empty area 42, as shown in FIG. 3D;

A light-transmissive material layer 43 is formed in the void region 42 formed by a part of the volume of the removed high-carrier doped layer 355. The light-transmissive material layer can be selected from indium tin oxide (IT) with conductive properties , Oxide, indium oxide, tin oxide, or polymers that do not have conductive properties, quartz, glass, etc., in addition to replacing the high carrier doped layer 3 5 5 that will absorb a large number of photons in order to greatly improve light emission In addition to the brightness, it also has the effect of supporting the LED epitaxial layer. As shown in Figure 3E, a reflective layer 45 with reflective light source characteristics is formed at the bottom end of the light-transmitting material layer 43, and one is provided on the top side. Adhesive layer 46, and the permanent substrate 47 with the lower electrode 4 9 on the bottom side is opposite to the above components, as shown in FIG. 3F; and the adhesive layer 45 of the permanent substrate 47 and the reflective layer 45 at the bottom of the LED epitaxial layer Adhesion to each other to complete the production of the LED element, as shown in Figure 3g. 0 Since the present invention is performed by replacing the temporary substrate 31 with a permanent substrate 47, it can easily remove most of the high-carrier doped layers. 3 5 5 ^ A frame enhances luminous brightness outside its permanent Plate 47 may also be fitted to the actual demand and inflammation of design choice of the material to be used, for example, a high conductivity, high thermal conductivity five invention is described in (7), a color or a color change to improve the function. In this embodiment, the present invention, made of boron nitride, aluminum nitride, and oxide, is effective and timely to lead the LED out of the element, which can not only ensure the life of the element. For the purpose of bonding, the reflection layer 45 and the adhesive or both can be integrated into one. In addition, in order to reach the combined layer 46, it is also possible to choose a good one. The lower electrode 49 and the completion of the bonding are completed at the beginning, and the crystalline layer and the permanent substrate 47 are completed. . Moreover, see the cross-sectional view of the 4th construction; as shown in the figure, the board structure (4 7), or the material with the power-up characteristics is directly made and used. Of course, the effect of the lower electrode 59 is. Due to the conductive connection of the present invention and the proper planning of the current flow path, the material's use or design scope will make the invisible quilt permanent substrate 4 7 series can be selected to contain materials such as stone aluminum, magnesium oxide, or titanium dioxide. The reliability of the excluded parts can also be maintained, and the composite layer 46 can also be made of the same material. The reflective layer can also achieve the purpose of combining two components to dissipate heat. The reflective layer 45 and the material with adhesive heat conduction characteristics production. The counter electrode 39 does not necessarily need to be different in different embodiments. It can also be formed separately on the bottom of the permanent substrate 47 after the LED is turned on. The corresponding lower electrode 49 and the figure are another example of the present invention. The structure of this embodiment is mainly used in the implementation of the basic layer of the reflective layer (45) directly selected with conductive and directly used as the lower electrode 5 9 to also have heat conduction to ensure reliable component operation contact 41 that has decentralized work The effect of current density, therefore,

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Finally, please refer to FIG. 5, which is a cross-sectional view of the structure of another embodiment of the present invention; as shown in the figure, in order to expand the scope of the present invention ~ from the use of dry fence, so use the invention to create The spirit can directly refer to the LED as U ^ 』Shun-ri layer 36 from a vertical light-emitting diode structure to a planar light-emitting diode, the same layer 55 or adhesive layer 56 can be LED stupid crystal layer 36 and the permanent substrate 47, and the combination of the conductive contact 41 and the light-transmitting material layer 43 is used to replace the second high-carrier doped layer 355, so when the first electrode 501 and the second electrode are 5 ° (2; A high-brightness light source can be projected when an electric current is passed between them. In summary, the high compartment area on the light-emitting side is greatly improved. The carrier doped layer and its carrier doped layer will fill a South LED element, which will grant patent grants. The above-mentioned restrictions on the shape and structure of the present invention are included in a part of the light-transmitting object of the present invention. The nature and certainty of it is that it is only for the purpose of implementation, Ming Zhishen

It is related to the law in the Ming Dynasty. The main volume is to use the quality layer to provide brightness to the industry. The scope, characteristics, and spirit of the present invention are based on a patent that can improve the luminous brightness by removing the bottom layer of the LED epitaxial layer into an empty compartment, and projecting and being effective in an empty light path. Therefore, the present invention is really a user, and should be in accordance with China's patent for invention patent application. It is just a preferred embodiment, and all changes and modifications within the scope of the patent application for this invention are within the scope.

513819 V. Description of the invention (9) Drawing number: Comparative description 11 Substrate 13 Reflective layer 15 Lower limiting layer 155 Carrier doped layer 16 Luminous active layer 17 Upper limiting layer 18 Current diffusion layer 100 Current blocking layer 101 Counter electrode 102 lower part Electrode 21 Substrate 23 Reflective layer 24 Metal bonding layer 26 Luminous active layer 265 High carrier doped layer 201 First electrode 202 Second electrode 31 Temporary substrate 33 Current diffusion layer 35 Lower limiting layer 355 High carrier doped layer 36 Luminescent activity Layer 37 Upper limiting layer 39 Opposite electrode 41 Conductive contact layer 42 Space cell 43 Light-transmitting material layer 45 Reflective layer 46 Adhesive layer 47 Permanent substrate 49 Lower electrode 55 Reflective layer 56 Adhesive layer 59 Lower electrode 501 First one electrode 502 First JHL electrode _

513819 on page 14 Brief description of the diagram Figure 1: A structural cross-sectional view of a conventional light-emitting diode; Figure 2: A structural cross-sectional view of another conventional light-emitting diode; Figures 3 A to 3 G: Fig. 4 is a structural cross-sectional view of a preferred embodiment of the present invention at each process step; Fig. 4 is a structural cross-sectional view of another embodiment of the present invention; and Fig. 5 is a structural cross-sectional view of another embodiment of the present invention .

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Claims (1)

^ U819 VI. Scope of patent application1. A method for manufacturing a light-emitting diode capable of improving luminous brightness, the main steps include: growing a LED epitaxial layer including at least a light-emitting active layer on the surface of a temporary substrate, the light-emitting A high-carrier doped layer is naturally formed on the bottom side of the active layer; the temporary substrate is peeled off; at least one conductive contact layer is formed on the bottom-side surface of the high-carrier doped layer; A high-carrier doped layer, so that a gap region is formed between the two high-carrier doped layers; a light-transmitting substance layer is formed in the space; and a permanent substrate is connected to the bottom side of the light-transmitting substance. position. 2. The method for manufacturing a light-emitting diode as described in item 1 of the scope of the patent application, further comprising the following steps: forming a reflective layer on the bottom side of the light-transmitting material layer, and the permanent substrate is further connected to the reflective layer The bottom side of the layer. 3. The method for manufacturing a light-emitting diode as described in item 1 of the scope of the patent application, further comprising the following steps: forming an adhesive layer on the top side of the permanent substrate, and then using the adhesive layer to adhere to the light-transmitting substance The bottom side of the layer. 4 · The method for manufacturing a light emitting diode as described in item 1 of the scope of patent application, further comprising the following steps: forming a lower electrode on the bottom side of the permanent substrate, and forming a pair of opposing electrodes on the top side of the LED epitaxial layer . 513819 VI. Application for patent scope 5 · = ^ The method of manufacturing a light-emitting diode described in item 4 of the patent scope, wherein the $ ^ counter electrode is formed on the top side of the LED layer before the temporary substrate is peeled off. The lower electrode is formed on the bottom side of the permanent substrate before the permanent substrate is connected to the transparent material layer. 6. The method for manufacturing a light emitting diode according to item 1 of the scope of patent application, further comprising the following steps: forming a current diffusion layer on the top side of the LED epitaxial layer. 7 · The light-emitting diode manufacturing method according to item 1 of the scope of the patent application, wherein the light-transmitting material layer is selected from indium tin oxide (1 TO), zinc oxide, indium oxide, tin oxide, and the like having conductive properties. One of the combinations. ', 8 · The method for manufacturing a light-emitting diode according to item 1 of the scope of the patent application, wherein the light-transmitting material layer is selected from one of polymers, quartz, glass, and a combination thereof having non-conductive characteristics. Made by. 9 · The light-emitting diode manufacturing method as described in item 1 of the scope of the patent application, wherein the permanent substrate is made of a material with good thermal conductivity. '1 0. The method for manufacturing a light-emitting diode as described in item 9 of the scope of the patent application, wherein the permanent substrate can be selected from silicon, boron nitride, nitride nitride, oxide nitride, oxide town, and oxide One of the combinations is a potential 丨 · 0 0 · The method for manufacturing a light emitting diode as described in item 1 of the patent application scope, further comprising the following steps: forming the LED epitaxial layer into a flat LED Components and divide on their top side Page 17 513819 6. Scope of patent application Do not form a first electrode and a second electrode. 12 · A light-emitting diode capable of improving luminous brightness, the main structure of which comprises: an LED epitaxial layer including at least a light-emitting active layer, a plurality of empty spaces are chiseled on the bottom side thereof; at least one conductive contact The layer 'is set on the bottom side surface of the LED worm crystal layer which is not set as a hollow space; a light-transmitting material layer is set on the hollow space; An adhesive layer is disposed between the light-transmitting material layer and a permanent substrate; and a lower electrode is disposed on the bottom side of the permanent substrate, and a pair of opposing electrodes are disposed on a portion of the top side of the LED epitaxial layer. 1 3 · The light-emitting diode described in item 2 of the patent application scope further includes a reflective layer disposed between the light-transmitting substance layer and the adhesive layer. 1 4 · The light emitting diode according to item 3 of the patent application scope, wherein the reflective layer and the adhesive layer are made of the same material. 1 5 · The light-emitting diode described in item 2 of the patent application scope, further comprising a current diffusion layer provided between the LED worm crystal layer and the counter electrode 1 6 · As the patent application scope No. 2 In the light-emitting diode according to the item, the adhesive layer may also be a lower electrode. 1 7 · The light-emitting diode according to item 12 of the scope of the patent application, wherein the light-transmitting material layer is selected from indium tin oxide (丨 τ〇), zinc oxide, indium oxide, tin oxide, and One of its combinations. Page 18 513819 VI. Application for patent scope 18 · If applying for a patent, the light material layer system glass and its group 1 9 · If applying for a patent, the substrate can be 20 0 · If applying for a patent, the substrate can be magnesium dioxide 21 If applying for a patent D The range of the stupid crystal layer system is optional. The range is selected. The range is selected from titanium and the range is 12th. The 12th has the 19th and the 12th in the group. The term of the boron nitride compound may be selected as an upright one. The light-emitting diode is made of a polymer, quartz, or the like having a transmissive property. The light-emitting diode is made of a material with permanent thermal characteristics. The light-emitting diode, which is made of one of the permanent, nitride, oxide, and oxide. Light emitting diode, wherein the LE type LED element and the flat type LED element