CN1316640C - Light-emitting element capable of increasing light-emitting action area - Google Patents
Light-emitting element capable of increasing light-emitting action area Download PDFInfo
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- CN1316640C CN1316640C CNB2003101010515A CN200310101051A CN1316640C CN 1316640 C CN1316640 C CN 1316640C CN B2003101010515 A CNB2003101010515 A CN B2003101010515A CN 200310101051 A CN200310101051 A CN 200310101051A CN 1316640 C CN1316640 C CN 1316640C
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Abstract
The present invention relates to a light-emitting element, particularly to a light-emitting element for improving a light-emitting active region. A fist material layer and a second material layer are mainly and orderly arranged on the surface of an LED base plate, and a PN boundary surface is naturally arranged between the first material layer and the second material layer. Additionally, a first extending groove which can penetrate the second material layer and a part of the first material layer is provided, a first extending electrode is arranged in the first extending groove, and the first extending electrode can be electrically connected with a first electrode arranged on a part of the upper surface of the second material layer. Thus, the first electrode and a second electrode likewise arranged on the other part of the upper surface of the second material layer can be positioned on the similar horizontal positions, not only is a subsequent manufacturing process conveniently carried out, but also the volume of partial second material layer does not need to be removed for the formation of the first electrode like a general light-emitting element. Consequently, the light-emitting active region of the PN boundary surface is correspondingly increased for effectively improving light-emitting lightness and a service life.
Description
Technical field
The invention relates to a kind of light-emitting component, refer to especially a kind ofly improve the luminous zone of action with the effective raising luminosity and the light-emitting component in useful life.
Background technology
Light-emitting diode (LED; Light-Emitting Diode) since possess have the life-span long, volume is little, caloric value is low, power consumption is few, reaction speed is fast, the no width of cloth is penetrated and monochromaticjty emitting characteristics and advantage, so be widely used in every products such as indicator light, advertisement plate, traffic lights, automobile lamp, display pannel, communication appliance, consumer electronics.
Light-emitting component commonly used, plane light-emitting diode for example, shown in Figure 1A and Fig. 1 (B), its light-emitting component 10 mainly is to be formed with the epitaxial layer 13 that is combined by one first material layer 131 and one second material layer 135 in regular turn on LED power supply substrate 11, and between first material layer 131 and second material layer 135 to be formed with a PN interface 133 with illumination effect naturally.In order to allow working power can pass through PN interface 133 smoothly, therefore, must remove part second material layer 136 and part PN interface 137, the long-pending length of its partial cross section is at least H1 (and remaining useful effect zone length is H2), cause part first material layer 131 upper surfaces to be exposed, and first electrode 17 can be fixedly arranged on this exposed first material layer, 131 part surfaces.Again, for operating current can evenly be distributed, therefore be provided with a transparent contact layer (TCL) 19 on remaining second material layer 135 surfaces, set firmly one second electrode 15 in transparent contact layer 19 upper surfaces again, 15 at first electrode 17 and second electrode form one can be by the conducting channel at PN interface 133, whereby to produce front projection light source L1.
Though plane light-emitting component 10 commonly used can be by PN interface 133 to produce front projection light source L1, it still has following shortcoming:
1.PN the front projection light source L1 that interface 133 produced will have part to be intercepted by second electrode 15 and absorb, and will reduce the output light flux and the brightness of light-emitting component 10 relatively.
2. must remove part PN interface 137 for the arrangement of first electrode 17, will lose the luminous zone of action H1 of part relatively, therefore also will reduce luminosity.
3. must remove part second material layer 135 for the arrangement of first electrode 17, cause first electrode 17 and second electrode 15, so will improve the difficulty in the follow-up making not at same horizontal level.
Therefore and the useful life of reducing element 4. because part PN interface 137 will be removed, and its luminous zone of action will be squeezed relatively, and the high temperature of not only working concentrates in certain regional extent easily,, and also be not suitable for high power luminous element.
For this reason, industry develops and another kind of commonly used light-emitting component, shown in the 2nd figure, be to be a flip-chip light-emitting diode (Flip Chip LED), flip-chip light-emitting diode 20 is inverted previous plane light-emitting component (10), and first electrode 17 and second electrode 150 electrically connect with first conducting wire 297 and second conducting wire 295 of being located on the substrate 29 by one first conductive projection (for example tin ball) 279 and second conductive projection 259 respectively again.So, first conducting wire 297, first conductive projection 279, first electrode 17 and second electrode 150, second conductive projection 259, second conducting wire 295 can form a conductive path, and provide the PN interface 133 operating currents, and the back side projection source L2 that PN interface 133 is produced can throw away via LED substrate 11 directions, do not intercepted fully and absorb, whereby to improve output light flux and brightness by second electrode 150.
Again, it is made that second electrode, 150 optional usefulness have the electric conducting material of reflecting effect, perhaps between the epitaxial layer 13 and second electrode 150, be provided with a reflector layer 155, front projection light source (L1) reflection that so PN interface 133 can be produced is directed to and correctly goes out optical position, to become a reverberation L4.
Though flip-chip light-emitting diode commonly used can obtain preferable luminous derivation efficient, it still has following structure shortcoming:
1. the arrangement for first electrode 17 still must remove part PN interface (137), will lose the luminous zone of action of part relatively and reduce luminosity.
2. the arrangement for first electrode 17 still must remove part second material layer (136), causes first electrode 17 and second electrode 150 not at same horizontal level, will increase the difficulty in the follow-up making relatively.
3. will be removed owing to part PN interface (137), its luminous zone of action will be squeezed relatively, and the high temperature of not only working concentrates in certain regional extent easily, and reduce the useful life of light-emitting component, and also not be suitable for high power luminous element.
4. first electrode 17 and second electrode 15 be not at same horizontal level, and the volume size of its first conductive projection 279 and second conductive projection 259 is also inequality relatively, forms the degree of difficulty on making.
5. covering the trichite optical element needs ball attachment machine and tin ball technique of alignment, and not only the hierarchy of skill is higher, and will significantly improve cost of manufacture.
Summary of the invention
For this reason, how to design a kind of light-emitting component of novelty, working current density not only can effectively evenly distribute, to improve luminous derivation efficient and luminosity, and, first electrode and second electrode can be positioned at same level height again naturally, and help follow-up making, and this is invention emphasis of the present invention.
Main purpose of the present invention is to provide a kind of light-emitting component that improves the luminous zone of action, the technical difficulties that can effectively solve above-mentioned light-emitting component commonly used and faced.
Secondary objective of the present invention is to provide a kind of light-emitting component that improves the luminous zone of action, can significantly reduce the area that removes at second material layer and PN interface, whereby with the luminous zone of action of effective raising and luminous derivation efficient.
Another purpose of the present invention is to provide a kind of light-emitting component that improves the luminous zone of action, and first electrode and second electrode can be positioned at same horizontal level, and help the carrying out of follow-up making.
Another purpose of the present invention is to provide a kind of light-emitting component that improves the luminous zone of action, by the luminous zone of action of larger area, not only can effectively improve the useful life of light-emitting component, also applicable to high power luminous element.
For reaching above-mentioned purpose, therefore, in a preferred embodiment of the present invention, it is mainly constructed is to include: a kind of light-emitting component that improves the luminous zone of action, and it is mainly constructed is to include: a LED substrate; One epitaxial layer, include one first material layer and one second material layer, wherein first material layer is to be formed at the LED upper surface of base plate, and second material layer is formed at the first material layer upper surface again, then is formed with a PN interface between first material layer and second material layer naturally; At least one first extending flute, can run through second material layer, and extend to the partial volume of first material layer, be provided with a groove separator and one first extension electrode in first extending flute more in regular turn, first extension electrode then can be by the groove separator and with the second material layer electrical isolation; One first electrode is fixedly arranged on the part upper surface of second material layer, and can electrically connects with first extension electrode across a surperficial separator; Reach one second electrode, be fixedly arranged on other part upper surfaces of second material layer.
Description of drawings
Fig. 1 (A): the structure sectional view that is plane light-emitting component commonly used;
Fig. 1 (B): the structure vertical view that is plane light-emitting component commonly used;
Fig. 2: be the structure sectional view that covers the trichite optical element commonly used;
Fig. 3 (A): the structure sectional view that is light-emitting component one preferred embodiment of the present invention;
Fig. 3 (B): the structure vertical view that is the present invention such as Fig. 3 (A) illustrated embodiment;
Fig. 4 (A): the structure sectional view that is the another embodiment of light-emitting component of the present invention;
Fig. 4 (B): the structure vertical view that is the present invention such as Fig. 4 (A) illustrated embodiment;
Fig. 5 (A): the structure sectional view that is the another embodiment of light-emitting component of the present invention;
Fig. 5 (B): the structure vertical view that is the present invention such as Fig. 5 (A) illustrated embodiment;
Fig. 6: be the structure sectional view that the present invention is applied to cover the trichite optical element;
Fig. 7 (A): the structure sectional view that is further embodiment of this invention;
Fig. 7 (B): the structure vertical view that is the present invention such as Fig. 7 (A) illustrated embodiment;
Fig. 8 (A): the structure sectional view that is further embodiment of this invention;
Fig. 8 (B): the structure vertical view that is the present invention such as Fig. 8 (A) illustrated embodiment;
Fig. 9 (A): the structure sectional view that is further embodiment of this invention;
Fig. 9 (B): the structure vertical view that is the present invention such as Fig. 9 (A) illustrated embodiment;
Figure 10 (A): the structure sectional view that is further embodiment of this invention;
Figure 10 (B): the structure vertical view that is the present invention such as Figure 10 (A) illustrated embodiment; And
Figure 11: the structure sectional view that is further embodiment of this invention.
Embodiment
At first, seeing also Fig. 3 (A) and Fig. 3 (B), is structure sectional view and the vertical view that is respectively light-emitting component one preferred embodiment of the present invention; As shown in the figure, light-emitting component 30 of the present invention mainly is to be formed with an epitaxial layer 33 that is combined by one first material layer 331 and one second material layer 335 on a LED substrate 31 in regular turn, after first material layer 331 is formed at LED substrate 31 upper surfaces, the surface forms second material layer 335 thereon again, and between first material layer 331 and second material layer 335, be formed with a PN interface or luminous zone 333 naturally, so can become a plane light-emitting diode.Cutter is provided with at least one first extending flute 371 that runs through second material layer 335 and part first material layer 331 on the appropriate location of second material layer 335, and on first extending flute, 371 inner surfaces and first electrode, 37 predeterminated positions, be provided with the groove separator 377 and the surperficial separator 379 of a tool insulation characterisitic individually, in groove separator 377, be provided with first extension electrode 375 with conductive characteristic again, first extension electrode 375 can electrically connect with first electrode 37 of being located at surperficial separator 379 upper surfaces, and the partial volume of first electrode 37 is the vertical extent positions that are positioned at surperficial separator 379.Again,, therefore be provided with an ohmic contact layer or transparent contact layer (TCL) 39, be provided with one second electrode 35 in transparent contact layer 39 upper surfaces again on remaining second material layer 335 surfaces for operating current can evenly be distributed.
Because, the present invention can utilize first extending flute 371 and first extension electrode 375 and the conducting wire of first electrode 37 is extended to first material layer 331, and needs cutter if remove large-area second material layer (136) and PN interface (137) as common features.So, first electrode 37 is the vertical extent positions that are arranged in second material layer, 335 part upper surfaces, and have approximate or identical horizontal level with second electrode 35, with first electrode (17) commonly used and second electrode (15) be that rough situation is completely different, so can help the carrying out of follow-up making.
Moreover, see also Fig. 4 (A) and Fig. 4 (B), be structure sectional view and vertical view for further embodiment of this invention; As shown in the figure, it mainly is that the front light source that designs the foregoing description is directed to the correct optical position that goes out, therefore, it can be with first electrode 370, second electrode 350 with the whole upper surface that is covered in second material layer 335 of large tracts of land mode, and it is made to have the material of conduction and reflection function by one respectively.Wherein, be provided with a surperficial separator 379 between first electrode 370 and second material layer 335, and first electrode 370 can form an electrical connection with first material layer 331 by first extension electrode 375.Again, first extension electrode 375, first extending flute 371 and groove separator 377 can straight line or various geometric figure aspects such as circle be distributed in surperficial separator 379 each positions, fully reach operating current and evenly distribute to improve luminosity, to increase the service life, be applicable to the purpose of high power luminous element.
Again, because first electrode 370 and second electrode 350 have reflective effect, therefore, the reflection that the front light source that the PN interface is produced will be subjected to first electrode 370 or second electrode 350 to be becoming a reflection source L4, and is led to correct light direction.Again, for the zone of action at PN interface can more be enlarged, therefore the upper surface at second material layer 335 still can be provided with a transparent contact layer (TCL) or an ohmic contact layer 355, is beneficial to the PN interface that action current can pass through first electrode, 370 vertical extent positions, and in order to produce back side light L3.
Certainly, this ohmic contact layer 355 also can be one, and to have the material of reflection function made, is a reflector layer directly just perhaps, and the front source reflection that the PN interface can be produced equally is to become a reflection source L4.
Again, seeing also Fig. 5 (A) and Fig. 5 (B), is structure sectional view and the vertical view for further embodiment of this invention; As shown in the figure, it mainly is second electrode, the 352 whole most of upper surfaces that are covered in second material layer 335 with Fig. 3 (A) illustrated embodiment, the remainder position then is provided with surperficial separator 379, and in the sphere of action of surperficial separator 379, be provided with first extending flute 371, groove separator 377 and first extension electrode 375 equally, so, the front light source that the PN interface produced can directly be subjected to the reflex of second electrode 352 and be directed to correct light direction, to become a reflection source L4.
In addition, seeing also Fig. 6, is the structure sectional view for further embodiment of this invention; As shown in the figure, in this embodiment, it is inverted the light-emitting component of the foregoing description (40), cause first electrode 370 to electrically connect with first conducting wire 497 of being located on the substrate 49 by first conductive projection 479, again, 350 at second electrode electrically connects with second conducting wire 495 of being located on this substrate 49 by second conductive projection 459, so, can become a flip-chip light-emitting diode (FlipChipU0).
Certainly, its first conductive projection 479 and second conductive projection 459 are to can be one to have scolder material, tin ball, containing metal material or an any conductive materials of conductive characteristic made, and substrate 49 then may be selected to be a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate or containing metal compound.
Because, light-emitting component 50 of the present invention has first electrode 370 and second electrode 350 of approximate or par position, therefore, needed first conductive projection 479 and 459 of second conductive projections can be made as and have identical big small size person in its follow-up making, the carrying out that not only can conveniently make like this, again can be identical because of first conductive projection 479 and second conductive projection, 459 both sides active force situations, and be unlikely the situation that light-emitting component 50 deflections take place, whereby with the working stability degree of relative raising element.
And, because the luminous zone or the PN interface 333 of light-emitting component 50 do not remove the too big zone of action, therefore, except generally producing back side projection source L2 and the reflection source L4 with flip-chip light-emitting diode structure commonly used, it also can increase by a back side projection source L3, not only increase its luminosity relatively, also can be because of the increase of luminous zone of action scope, and reduce the current density and the work high temperature of operating current in a certain regional extent relatively, whereby with useful life of effective lifting light-emitting component.
Continuing, see also Fig. 7 (A) and Fig. 7 (B), is structure sectional view and the vertical view that is respectively further embodiment of this invention; As shown in the figure, in this embodiment, mainly be that next-door neighbour's first electrode 57 predeterminated positions cutter is provided with an isolated groove 576 that can run through second material layer 335 and part first material layer 331 on second material layer 335 of light-emitting component 60, can select to be provided with a separator 577 that can increase the insulation effect in the isolated groove 576 again, to replace the groove separator 377 or the surperficial separator 379 of the foregoing description.Side at isolated groove 576 is provided with one first extending flute 571 and first extension electrode 575 equally, and first extension electrode 575 can electrically connect with first electrode 57 of being located at second material layer, 335 part surfaces.
In this embodiment, for operating current can evenly be distributed, therefore can be provided with a transparent contact layer (TCL) or an ohmic contact layer 39 at second material layer, 335 part surfaces, set firmly this second electrode 35 in transparent contact layer (TCL) or ohmic contact layer 39 part surfaces again.Again, isolated groove 576 can be located at the appropriate location of second material layer 335, and be provided with first electrode 57 along the side of isolated groove 576, be provided with at least one second extension electrode 578 or the 3rd extension electrode 579 that runs through second material layer 335 and part first material layer 331 and the part position of first electrode 57 is extensible, it is more even to allow operating current distribute whereby.Because in this embodiment, mainly be to utilize isolated groove 576 with purpose as first electrode 57 and 35 isolation of second electrode, therefore, first electrode 57 and second electrode 35 all can be arranged at the part upper surface of second material layer 335, have same level height, and help the carrying out of follow-up making flow process.
Certainly, second extension electrode 578 or the 3rd extension electrode 579 are to may be selected to be a point-like, strip, ring-type, circle, rectangle, straight line, semi-circular or its composite type shape, for example in this embodiment, second extension electrode 578 is a dotted state sample, and the 3rd extension electrode 579 then is the strip aspect of the whole side of a coating.
In addition, seeing also Fig. 8 (A) and Fig. 8 (B), is structure sectional view and the structure vertical view that is respectively further embodiment of this invention; As shown in the figure, it mainly is with first electrode 570 of the foregoing description, second electrode 350 is covered in second material layer 335 in the large tracts of land mode upper surface.Wherein, first electrode 570 can form an electrical connection with first material layer 331 by first extension electrode 575.Again, first extension electrode 575, second extension electrode 578 and the 3rd extension electrode 579 can straight line or various geometric figure aspects such as circle be distributed in a side of second material layer 335, and electrically connect with first electrode 570.
Certainly, by the reflecting effect of first electrode 570, second electrode 350 or between second material layer 335 and second electrode 350 set reflector layer, ohmic contact layer or transparent contact layer 355, the front light source that the PN interface can be produced is reflected equally, becoming a reflection source L4, and help the lifting of luminosity.
Again, seeing also Fig. 9 (A) and Fig. 9 (B), is structure sectional view and the structure vertical view that is respectively further embodiment of this invention; As shown in the figure, in this embodiment, it mainly is that spirit of the present invention is applied to ternary (AlGaAs) or quaternary (AlGalnP) light-emitting component.Semiconductor substrate 89, for example growing up on GaAs (GaAs) substrate has an epitaxial layer 83.Wherein, epitaxial layer 83 may be selected to be a ternary or quaternary compound made.Again, upper surface in second material layer 835 is formed with a transparent substrates 81, for example GaP substrate, glass (Glass), sapphire (Sapphire), carborundum (SiC), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), zinc sulphide (ZnS), selenium zinc sulphide (ZnSSe) or quartz, and the light tight GaAs substrate 89 that can absorb projection source removed.
Continue, be provided with the isolated groove 576 and first isolated groove 571 that can run through first material layer 831 and part second material layer 835 in first material layer 831 surface cutter, and can select whether to need to be provided with a separator 577 in the isolated groove 576, but then need to be provided with first extension electrode 575 in first isolated groove 571, and can electrically connect with first electrode 570 of being located at first material layer, 831 part surfaces.350 other parts surfaces of being located at first material layer 831 across isolation channel 576 of second electrode, and form a conductive path with first electrode 570.
Continuing, see also Figure 10 (A) and Figure 10 (B), is structure sectional view and the structure vertical view that is respectively further embodiment of this invention; As shown in the figure, in this embodiment, around light-emitting component 90 periphery earlier cutter be provided with the 3rd extending flute (or claiming first extending flute) 671 that can run through second material layer 335 and part first material layer 331, and be provided with a transparent contact layer with conduction or reflecting effect earlier at the upper surface of second material layer 335, ohmic contact layer or reflector layer 77, be provided with a separator 677 in reflector layer 77 and second material layer, 335 peripheries again, cutter is provided with one second extending flute 651 in the appropriate location of separator 677, causes second electrode 65 can be directly or be electrically connected at second material layer 335 via reflector layer 77.Can be provided with one first ring lateral electrode 674 around the periphery of second material layer 335 and across separator 677, the first ring lateral electrode 674 can be electrically connected at first electrode 67, so also can reach operating current and evenly distribute, improves the luminous zone of action and cause first electrode 67 and second electrode 65 is positioned at the purpose of same horizontal level.
Certainly, the 4th extension electrode 678 of also available at least one the point-like aspect of second material layer, 335 peripheries is with the first ring lateral electrode 674 of substituted cyclic, and 678 need of each the 4th extension electrode electrically connect with first electrode 67 by a surface electrode 676.
At last, seeing also Figure 11, is the structure sectional view for further embodiment of this invention; As shown in the figure, in this embodiment, mainly be with aforementioned light-emitting component 40 (shown in Fig. 4 (A)) be placed in a substrate 91 in the glove groove 917 established of cutter, utilize a photic zone 94 or heat dissipating layer 99 and fixed.
Again, may be selected to be the substrate 91 of a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate or containing metal compound, its glove groove 917 can be designed to an annular, rectangle or taper aspect.And, can be provided with a reflector layer 915 at its glove groove 917 peripheries, so, except light source L2, the L3 of normal projection, L4, also can obtain reflection source L5, and effectively increase its luminosity.
Again, also can be provided with a color converting layer 945 that combines by fluorescent substance, phosphorus or its composite type in the photic zone 94, whereby to change the wavelength and the color of projection coloured light.
Again, 99 of heat dissipating layers with heat sinking function are coated on around the PN interface, so light-emitting component 40 can be done the time spent to produce work high temperature and conduct outside light-emitting component 40 by heat dissipating layer 99, whereby to be applicable in the high power luminous element device.
Claims (39)
1, a kind of light-emitting component that improves the luminous zone of action is characterized in that, includes:
The one LED substrate of powering;
One epitaxial layer, include one first material layer and one second material layer, wherein first material layer is formed at this LED power supply upper surface of base plate, and second material layer is formed at this first material layer upper surface again, then includes a luminous zone between first material layer and second material layer naturally;
At least one first extending flute, run through second material layer, and extend to the partial volume of first material layer, be provided with a groove separator and one first extension electrode in first extending flute more in regular turn, first extension electrode then by the groove separator with this second material layer electrical isolation;
One first electrode is fixedly arranged on the part upper surface of this second material layer across a surperficial separator, electrically connect with this first extension electrode; And
One second electrode is fixedly arranged on other part upper surfaces of this second material layer.
2, light-emitting component as claimed in claim 1 is characterized in that, described this first electrode is and the same horizontal level of second electrode.
3, light-emitting component as claimed in claim 1 is characterized in that, described this first extension electrode is the vertical extent position that is positioned at first electrode.
4, light-emitting component as claimed in claim 1 is characterized in that, select between described this second electrode and second material layer to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.
5, light-emitting component as claimed in claim 1 is characterized in that, described should the surface separator and second material layer between select to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.
6, light-emitting component as claimed in claim 1, it is characterized in that, include a power supply substrate, its upper surface is respectively equipped with one first conductive layer and second conductive layer, wherein first conductive layer is to be electrically connected with this first electrode by one first conductive projection, and second conductive layer is then electrically connected with this second electrode by one second conductive projection.
7, light-emitting component as claimed in claim 6 is characterized in that, described this light-emitting component is a flip-chip light-emitting diode.
8, light-emitting component as claimed in claim 6, it is characterized in that, described this power supply substrate be chosen as a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, containing metal compound and knockdown one of them.
9, light-emitting component as claimed in claim 1 is characterized in that, described this light-emitting component is a plane light-emitting diode.
10, light-emitting component as claimed in claim 1, it is characterized in that, described this LED power supply substrate be chosen as GaP power supply substrate, glass, sapphire, carborundum, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide, quartz and knockdown one of them.
11, light-emitting component as claimed in claim 10 is characterized in that, described this epitaxial layer is that to be chosen as a ternary, quaternary and knockdown one of them material thereof made.
12, light-emitting component as claimed in claim 1, it is characterized in that, include a power supply substrate, cutter is provided with one in order to put the glove groove of this light-emitting component in this power supply substrate, wherein this first electrode is electrically connected at one and is located at first conducting wire of power supply on the substrate by one first conductive lead wire, and second electrode then is electrically connected at another and is located at second conducting wire on the power supply substrate by second conductive lead wire.
13, light-emitting component as claimed in claim 12 is characterized in that, is provided with a photic zone that is located on this light-emitting component periphery in described this glove groove.
14, light-emitting component as claimed in claim 13 is characterized in that, is provided with one in described this photic zone and selects by a fluorescent substance, phosphorus and knockdown one of them made color converting layer thereof.
15, light-emitting component as claimed in claim 12 is characterized in that, is provided with a heat dissipating layer that is located on this light-emitting component periphery in described this glove groove.
16, light-emitting component as claimed in claim 12, it is characterized in that, described this power supply substrate be chosen as a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, containing metal compound and knockdown one of them.
17, light-emitting component as claimed in claim 12 is characterized in that, described this glove groove is to be chosen as a taper, circle and one of them annular aspect.
18, light-emitting component as claimed in claim 12 is characterized in that, the inner surface of described this glove groove is provided with a reflector layer.
19, light-emitting component as claimed in claim 1 is characterized in that, described this first extending flute is the peripheral position that is located on first electrode.
20, light-emitting component as claimed in claim 19 is characterized in that, is provided with at least one extension electrode in described this first extending flute, and each extension electrode is electrically connected with this first electrode by the surface electrode on a surface provided thereon.
21, light-emitting component as claimed in claim 1 is characterized in that, described this first electrode and second electrode are the vertical extent positions that covers the whole second material layer upper surface, and it is made to have the material of conduction and reflection function by one respectively.
22, light-emitting component as claimed in claim 1, it is characterized in that, described this first extending flute is the periphery that is located on this second material layer, and runs through the partial volume of first material layer, is provided with a groove separator and first extension electrode in first extending flute more in regular turn.
23, light-emitting component as claimed in claim 22 is characterized in that, described this first extension electrode is a ring lateral electrode.
24, light-emitting component as claimed in claim 22, it is characterized in that, described should the surface separator cutter be provided with one second extending flute, cause the exposed second material layer part upper surface, this second electrode then is fixedly arranged in second extending flute and other part upper surfaces of second material layer.
25, a kind of light-emitting component that improves the luminous zone of action is characterized in that it includes:
The one LED substrate of powering;
One epitaxial layer, include one first material layer and one second material layer, wherein first material layer is to be formed at this LED power supply upper surface of base plate, and second material layer is formed at this first material layer upper surface again, then includes a luminous zone between first material layer and second material layer naturally;
One second electrode is fixedly arranged on the part upper surface of this second material layer;
One first electrode is fixedly arranged on other part upper surfaces of this second material layer;
At least one extending flute is divided into the position below this first electrode, makes each extending flute run through second material layer and the first material layer partial volume, and is provided with at least one extension electrode that electrically connects with this first electrode in extending flute; And
At least one isolated groove is located between this first electrode and second electrode, and runs through second material layer and the first material layer partial volume.
26, light-emitting component as claimed in claim 25 is characterized in that, described this first electrode is with second electrode same horizontal level to be arranged.
27, light-emitting component as claimed in claim 25 is characterized in that, select between described this first material layer and first electrode to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.
28, light-emitting component as claimed in claim 25, it is characterized in that, include a power supply substrate, its upper surface is respectively equipped with one first conductive layer and second conductive layer, wherein first conductive layer is electrically connected with this first electrode by one first conductive projection, and second conductive layer is then electrically connected with this second electrode by one second conductive projection.
29, light-emitting component as claimed in claim 28, it is characterized in that, described this power supply substrate be chosen as a pottery, glass, aluminium nitride, carborundum, aluminium oxide, epoxy resin, urea resin, plastic cement, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, containing metal compound and knockdown one of them.
30, light-emitting component as claimed in claim 28 is characterized in that, described this light-emitting component is to be a flip-chip light-emitting diode.
31, light-emitting component as claimed in claim 25, it is characterized in that, include a power supply substrate, cutter is provided with one in order to put the glove groove of this light-emitting component in this power supply substrate, wherein this first electrode is electrically connected at one and is located at first conducting wire of power supply on the substrate by one first conductive lead wire, and second electrode then is electrically connected at another and is located at second conducting wire on the power supply substrate by second conductive lead wire.
32. light-emitting component as claimed in claim 25 is characterized in that, is provided with a separator in described this isolated groove.
33, light-emitting component as claimed in claim 25 is characterized in that, described this first electrode and second electrode are to cover the whole second material layer upper surface, and it is made to have the material of conduction and reflection function by one respectively.
34, light-emitting component as claimed in claim 25 is characterized in that, select between described this first material layer and second electrode to be provided with a transparent contact layer, ohmic contact layer, reflector layer and knockdown one of them.
35, light-emitting component as claimed in claim 25, it is characterized in that, described this LED power supply substrate be chosen as GaP power supply substrate, glass, sapphire, carborundum, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide, quartz and knockdown one of them.
36, light-emitting component as claimed in claim 35 is characterized in that, described this epitaxial layer is that to be chosen as a ternary, quaternary and knockdown one of them material thereof made.
37, light-emitting component as claimed in claim 25 is characterized in that, described this extending flute is the periphery that is located on this second material layer, and runs through the partial volume of first material layer, is provided with this extension electrode in the extending flute again.
38, light-emitting component as claimed in claim 37 is characterized in that, described this extension electrode is a ring lateral electrode.
39, light-emitting component as claimed in claim 37, it is characterized in that, described this second material surface is provided with a surperficial separator, surface separator cutter is provided with one second extending flute, cause the exposed second material layer part upper surface, and this second electrode is fixedly arranged in second extending flute and other part upper surfaces of second material layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101010515A CN1316640C (en) | 2003-10-13 | 2003-10-13 | Light-emitting element capable of increasing light-emitting action area |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101010515A CN1316640C (en) | 2003-10-13 | 2003-10-13 | Light-emitting element capable of increasing light-emitting action area |
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| CN1316640C true CN1316640C (en) | 2007-05-16 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100487931C (en) | 2004-09-27 | 2009-05-13 | 松下电器产业株式会社 | Semiconductor light emitting element, manufacturing method and mounting method of the same and light emitting device |
| CN104600166A (en) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | LED chip structure and preparation method thereof |
| JP2017054901A (en) * | 2015-09-09 | 2017-03-16 | 豊田合成株式会社 | Group iii nitride semiconductor light emitting device and manufacturing method of the same |
| CN109599465A (en) * | 2017-09-30 | 2019-04-09 | 展晶科技(深圳)有限公司 | LED chip construction |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000315820A (en) * | 1999-04-27 | 2000-11-14 | Shogen Koden Kofun Yugenkoshi | High intensity light emitting diode |
| US6319778B1 (en) * | 2000-08-10 | 2001-11-20 | United Epitaxy Company, Inc. | Method of making light emitting diode |
| TW513819B (en) * | 2001-12-21 | 2002-12-11 | Opto Tech Corp | LED capable of increasing the brightness and the fabrication method thereof |
| CN1387266A (en) * | 2002-06-25 | 2002-12-25 | 光磊科技股份有限公司 | LEC with higher luminous efficiency |
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2003
- 2003-10-13 CN CNB2003101010515A patent/CN1316640C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000315820A (en) * | 1999-04-27 | 2000-11-14 | Shogen Koden Kofun Yugenkoshi | High intensity light emitting diode |
| US6319778B1 (en) * | 2000-08-10 | 2001-11-20 | United Epitaxy Company, Inc. | Method of making light emitting diode |
| TW513819B (en) * | 2001-12-21 | 2002-12-11 | Opto Tech Corp | LED capable of increasing the brightness and the fabrication method thereof |
| CN1387266A (en) * | 2002-06-25 | 2002-12-25 | 光磊科技股份有限公司 | LEC with higher luminous efficiency |
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