CN1324719C - Led - Google Patents
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- CN1324719C CN1324719C CNB2004100307285A CN200410030728A CN1324719C CN 1324719 C CN1324719 C CN 1324719C CN B2004100307285 A CNB2004100307285 A CN B2004100307285A CN 200410030728 A CN200410030728 A CN 200410030728A CN 1324719 C CN1324719 C CN 1324719C
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Abstract
The present invention discloses a light emitting diode, particularly a plane type light emitting diode applicable to a quaternary epitaxial layer. The present invention is characterized in that the quaternary epitaxial layer formed by combining a first material layer, a light emitting layer and a second material layer is firstly formed on a semiconductor basal plate, and the upper surface of the second material layer is fixedly provided with a transparent basal plate; after the semiconductor basal plate is removed, the lower surface of the first material layer is respectively provided with at least one isolating groove and a first extending groove in a chiseling mode, wherein the isolating groove can penetrate the first material layer and extend to part of the volume of the second material layer, a first extending electrode arranged in the first extending groove can be electrically connected with a first electrode arranged at part of the surface of the first material layer, and thus, the first electrode can have a horizontal position approximately identical with that of a second electrode formed at the surface of other parts of the first material layer. Thereby, the present invention has the advantages of convenient subsequent manufacturing process proceeding, PN boundary light emitting active region enlargement, light emitting brightness improvement and service life extension.
Description
Technical field
The present invention relates to a kind of light-emitting diode, especially refer to a kind of plane light-emitting diode that the quaternary place prolongs layer that can be applicable to, not only can make things convenient for the carrying out of subsequent manufacturing processes, can therefore increase the luminous zone of action at PN interface again, thereby improve luminosity and useful life.
Background technology
Light-emitting diode (LED; Light-Emitting Diode) since possess have the life-span long, volume is little, caloric value is low, power consumption is few, reaction speed is fast, the no width of cloth is penetrated and monochromaticjty emitting characteristics and advantage, so be widely used in every products such as indicator light, advertisement plate, traffic signal light, automobile lamp, display pannel, communication appliance, consumer electronics.
Existing light-emitting diode, the light-emitting diode that for example has quaternary extension (epitaxy) layer, as shown in Figure 1, its luminescence component 10 mainly is to go up at semiconductor substrate 11 (as the GaAs substrate) to form an epitaxial loayer 13, and this epitaxial loayer 13 is combined by one first material layer 131, luminescent layer 132 and one second material layer 133 at least.Continue, be installed with one first electrode 17, then be installed with one second electrode 15 at the lower surface of semiconductor substrate 11 at the upper surface of second material layer 133.
Do the time spent when first electrode 17 and second electrode 15, luminescent layer 132 will produce a projection source, for example front lighting L1, L2.Because GaAs substrate 11 has the light source of absorption and lighttight characteristic, output light flux and luminosity influence for light-emitting diode are very big, therefore, also can between the GaAs substrate 11 and first material layer 131, be provided with a reflector layer 19 (also can be described as and disperse Bragg reflecting layer DBR), the back side light L3 that luminescent layer 132 can be produced reflexes to positive bright dipping place whereby, and is shown in dotted line.
Though above-mentioned existing light-emitting diode can produce projection source, its front lighting L2 still can be absorbed by first electrode 17 and can't be projeced into the external world.
For this reason, industry is developed the light-emitting diode structure-improved of multiple quaternary epitaxial loayer, for example shown in Figure 2, its mainly be the upper surface of second material layer 133 at first by an adhesive layer 22 or directly extensional mode be formed with a transparent substrates 21, as GaP substrate (being called as a window layer or thick transparentlayer), more lighttight GaAs substrate 11 is removed.Continue, part epitaxial loayer 235 is removed, being formed with one first groove 23, and expose the part lower surface of second material layer 133 with general semiconductor fabrication.Afterwards, be provided with a conductive layer 29 and second electrode 25 in regular turn in first material layer, 131 lower surfaces again, and be installed with one first electrode 27 in exposed second material layer, 133 lower surfaces.So, when producing light source when luminescent layer 132 effects, its back side light L4 can be projeced into the external world by transparent substrates 21, and can not be subjected to the inhalation effects of first electrode 27, whereby with effective raising luminosity.In addition, utilize second kind of existing structure, can also be conveniently to become a flip-chip LED (Flip-Chip LED; The present invention's structure shown in Figure 10 for example).
Though existing second kind of light-emitting diode can obtain preferable luminous derivation efficient and luminosity, it has following shortcoming:
Must remove part epitaxial loayer 235 for the arrangement of first electrode 27, will lose the luminous zone of action of part relatively and reduce luminosity.
Must remove part epitaxial loayer 235 for the arrangement of first electrode 27, so will cause first electrode 27 and second electrode 25, also improve the difficulty in the follow-up making relatively not at same horizontal level.
Because part luminescent layer 132 will be removed, its luminous zone of action will be squeezed relatively, and the high temperature of so working will concentrate in certain regional extent easily, reduce the useful life of its luminescence component relatively.
Owing to the transparency carrier of unlike material is direct extension or is fixedly arranged on the epitaxial loayer by an adhesive layer that not only manufacture process is loaded down with trivial details, and also will reduce its production qualification rate.
Summary of the invention
Technical problem to be solved by this invention provides a kind of quaternary epitaxial loayer light-emitting diode of novelty, working current density not only can effectively evenly distribute, to improve luminous derivation efficient and luminosity, and first electrode and second electrode can be positioned at same level height position again naturally, and help follow-up easy to make.
Main purpose of the present invention is to provide a kind of light-emitting diode, the technical difficulties that can solve above-mentioned existing light-emitting diode effectively and faced.
Secondary objective of the present invention is to provide a kind of light-emitting diode, need not under the situation that large tracts of land removes the part epitaxial loayer, can allow first electrode obtain the suitable position that sets firmly, whereby with the luminous zone of action of effective raising and output light flux.
Another purpose of the present invention is to provide a kind of light-emitting diode, and first electrode can be positioned at approximate same horizontal level with second electrode, therefore can help the carrying out of follow-up making.
Another purpose of the present invention is to provide a kind of light-emitting diode, and by the luminous zone of action of larger area, it is comparatively even to cause action current to distribute, therefore the useful life that can effectively improve luminescence component.
Another purpose of the present invention is to provide a kind of light-emitting diode, the quaternary epitaxial loayer can be fixedly arranged on the power supply substrate, not only can avoid the absorption effects of extinction substrate or lead, and also can improve the production qualification rate relatively.
For reaching above-mentioned purpose, the invention provides a kind of light-emitting diode, it includes at least: an epitaxial loayer, include one first material layer and one second material layer, wherein the second material series of strata are fixedly arranged on the upper surface of first material layer; One transparent substrates is fixedly arranged on surface on second material layer; One first electrode is fixedly arranged on the part lower surface of first material layer; One second electrode is fixedly arranged on the other parts lower surface of first material layer; At least one extending flute can run through first material layer, and extends to the partial volume of second material layer, and is provided with an extension electrode that can electrically connect with first electrode in extending flute; And at least one isolated groove, be located between first electrode and second electrode, can run through first material layer, and extend to the partial volume of second material layer.
For further understanding and the effect of being familiar with architectural feature of the present invention and being reached, describe preferred embodiment of the present invention in detail below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the structure sectional view of existing light-emitting diode;
Fig. 2 is the structure sectional view of another kind of existing light-emitting diode;
Fig. 3 A to Fig. 3 C is respectively the structure sectional view of light-emitting diode one preferred embodiment of the present invention at each making step;
Fig. 4 is the structure sectional view of the present invention such as Fig. 3 C illustrated embodiment;
Fig. 5 A is the structure sectional view of further embodiment of this invention;
Fig. 5 B is the structure upward view of the present invention such as Fig. 5 A illustrated embodiment;
Fig. 6 A is the structure sectional view of further embodiment of this invention;
Fig. 6 B is the present invention's structure upward view of embodiment as shown in Figure 6A;
Fig. 7 A is the structure sectional view of further embodiment of this invention;
Fig. 7 B is the structure upward view of the present invention such as Fig. 7 A illustrated embodiment;
Fig. 8 A is the structure sectional view of further embodiment of this invention;
Fig. 8 B is the structure upward view of the present invention such as Fig. 8 A illustrated embodiment;
Fig. 9 is the structure sectional view of further embodiment of this invention;
Figure 10 is the structure sectional view of further embodiment of this invention;
Figure 11 is the structure sectional view of further embodiment of this invention;
Figure 12 is the structure sectional view of further embodiment of this invention; And
Figure 13 is the structure sectional view of further embodiment of this invention.
Wherein, Reference numeral:
10,100,110,120,130-luminescence component;
The 11-LED substrate;
The 13-epitaxial loayer, 13-first material layer, 132-luminescent layer, 133-second material layer;
15-second electrode, 17-first electrode, 19-reflector layer;
The 21-transparent substrates, 22-adhesive layer, 23-first irrigation canals and ditches, 235-part epitaxial loayer;
25-second electrode, 27-first electrode, 29-conductive layer;
The 31-LED substrate, 33-epitaxial loayer, 331-first material layer, 332-luminescent layer;
333-second material layer, 35-second electrode, 350-second electrode, 37-first electrode;
371-first extending flute, 372-second extending flute, 375-first extension electrode;
The 376-isolated groove, 377-separator, 378-second extension electrode;
The 39-conductive layer, 41-transparent substrates, 42-adhesive layer, 50-luminescence component;
The 60-luminescence component, 65-second electrode;
67-first electrode, 671-first extending flute;
675-first extension electrode, 677-groove separator;
679-surface separator, the 70-luminescence component;
75-second electrode, 77-ohmic contact point
The 79-conductive layer, the 80-luminescence component;
85-second electrode, the 855-conductive layer;
857-ohmic contact point, 858-second conductive projection;
87-first electrode, 871-first extending flute;
875-first extension electrode, 877-groove separator;
878-first conductive projection, 879-surface separator;
The 89-substrate of powering, 890-antistatic protection assembly;
891-ESD first electrode, 892-ESD second electrode;
895-second conductive layer, 897-first conductive layer;
The 90-flip-chip LED, the 91-LED substrate;
931-first material layer, 933-second material layer;
95-second electrode, 951-the 3rd extending flute;
The 96-reflector layer, 97-first electrode;
971-first extending flute, the 974-first ring lateral electrode;
The 98-separator, 990-voltage is adjusted assembly;
991-VRD first electrode, 992-VRD second electrode;
The 995-separator, 997-the 3rd power supply circuits.
Embodiment
See also Fig. 3 A to Fig. 3 C, be respectively the structure sectional view of light-emitting diode one preferred embodiment of the present invention at each making step; As shown in the figure, making of the present invention mainly includes the following step:
At first, semiconductor substrate 31 is provided, GaAs substrate (extinction substrate) for example, and one first material layer 331 is arranged (as N type or P type coating layer), luminescent layer 332 and second material layer 333 (as P type or N type coating layer) of growing up in regular turn in GaAs substrate 31 upper surfaces, so to constitute a quaternary epitaxial loayer 33, as shown in Figure 3A.
Wherein, this luminescent layer 332 can be a PN interface, and can select be for a ternary or quaternary compound made, for example homostyructure, single heterojunction structure, double-heterostructure, the quantum well structure of arsenic gallium aluminium (AlGaAs), AlGaInP (AlGaInP) or AlGaInP.
Moreover, upper surface at second material layer 333 is formed with a transparent substrates 41 by an adhesive layer 42 or direct extensional mode, for example gallium phosphide (GaP), glass (Glass), sapphire (Sapphire), carborundum (SiC), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), zinc sulphide (ZnS), selenium zinc sulphide (ZnSSe) or quartz etc., and GaAs substrate 31 light tight and that can absorb projection source removed.Again, cutter is provided with at least one isolated groove 376 and at least one first extending flute 371 in the part position of first material layer, 331 lower surfaces, first material layer 331 of each isolated groove 376 and all penetrable its vertical extent direction of first extending flute 371, luminescent layer 332 and part second material layer 333 volumes are shown in Fig. 3 B.
Certainly, in another embodiment of the present invention, it can be after second material layer 333 forms, continue to grow up one undope concentration but with the made thick photic zone 41 of second material layer, 333 identical materials, quaternary material AlGaInP for example, to replace the formed GaP substrate of the foregoing description, the characteristic that has identical material by the thick photic zone 41 and second material layer 333, the high resistance puzzlement that not only can effectively solve non-ohmic contact and cause, and also can simplify and make flow process and improve the production qualification rate, therefore, applicable to various plane light-emitting diodes.
Again, in isolated groove 376, can or fill other megohmite insulant by spatial separation to become a separator 377, then be provided with first extension electrode 375 with conducting function in first extending flute 371, first extension electrode 375 will electrically connect with second material layer 333, and by the obstruct of isolated groove 376 or separator 377, and with first material layer, 331 electrical isolation.Again, can be installed with one first electrode, 37, the first electrodes 37 at the part lower surface of the upper surface of first extension electrode 375 and first material layer 331 can electrically connect with first extension electrode 375.Then can be installed with a conductive layer 39 and second electrode 35 across separator 376 in regular turn at the other parts lower surface of first material layer 331.So, when first electrode 37 and second electrode, 35 electric actions, its action current can pass luminescent layer 332 to produce a projection source by first extension electrode 375, as back side light L4, as Fig. 3 C and shown in Figure 4.
Again, in order to allow the action current can more even distribution, cause and to enlarge its effect light-emitting area, reduce its working temperature and effectively prolong assembly useful life, therefore isolated groove 376 can be designed to the peripheral position near epitaxial loayer 33, be provided with at least one second extending flute 372 and second extension electrode 378 again and prolonging isolated groove 376 peripheries, each second extension electrode 378 all can electrically connect with first electrode 37 and second material layer 333, and with first material layer, 331 electrical isolation.And the shape of the upward view of first extension electrode 375 and second extension electrode 378 (as Fig. 4,5B, 6B, 7B) can be various forms such as some shapes, strip, annular, semi-circular, circular, rectangle.
Because light-emitting diode of the present invention need not to remove under the situation of large tracts of land epitaxial loayer 235, can set firmly first electrode 37 and second electrode 35, therefore, first electrode 37 and second electrode 35 have the position of approximate same level, and help follow-up making flow process.
Certainly, in order to guide PN the front lighting that the interface is produced smoothly, and do not absorbed by second electrode 35, therefore, this conductive layer 39 also can be one, and to have the material of reflective characteristic made.
In addition, see also Fig. 5 A and Fig. 5 B, be respectively the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, in this embodiment, it mainly is that first material layer, 333 part lower surfaces at light-emitting diode 50 are installed with large-area second electrode 350, conduction and reflection function by second electrode 350, to replace the conductive layer 39 of the foregoing description, so, not only can allow outside the more even distribution of action current, also can directly reflect the front light source to become a reflection source L5, whereby with its output light flux of relative raising.
Continue, see also Fig. 6 A and Fig. 6 B, be respectively the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, luminescence component 60 of the present invention mainly is that cutter is provided with at least one first material layer 331 that runs through on the appropriate location of one first material layer 331, first extending flute 671 of luminescent layer 332 and part second material layer 333, and on first extending flute, 671 inner surfaces and first electrode, 37 predeterminated positions, be provided with the groove separator 677 and the surperficial separator 679 of a tool insulation characterisitic individually, being provided with first extension electrode, 675, the first extension electrodes 675 with conductive characteristic in groove separator 677 again can electrically connect with first electrode 67 of being located at surperficial separator 679 upper surfaces.For operating current can evenly be distributed, therefore directly be provided with one second electrode 65 on remaining first material layer 331 surfaces again.So, not only can reach equally first electrode 67 have with the approximate same level heights of second electrode 65 outside, and because the active area that luminescent layer 332 is removed is littler, and the peripheral position of most of luminescent layer 332 can obtain to keep, so its output light flux can obtain significantly to promote.
Again, see also Fig. 7 A and Fig. 7 B, be the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, it mainly is that second electrode 65 with the foregoing description changes to the second less electrode 75 of active area, and the lower surface uniformly dispersing of first material layer 331 has a plurality of ohmic contact points 77, then be provided with a conductive layer 79 between second electrode 75, ohmic contact point 77 and first material layer 331, action current can be evenly distributed in most of sphere of action of epitaxial loayer 33 whereby, not only its output light flux can be effectively improved, also its useful life can be prolonged.
Again, see also Fig. 8 A and Fig. 8 B, be the structure sectional view and the upward view of further embodiment of this invention; As shown in the figure, it mainly is the peripheral position of closing on of first extending flute 871, groove separator 877 and first extension electrode 875 being located at first material layer 331, and other lower surface position of first material layer 331 then is respectively equipped with a plurality of ohmic contact points 857 and a conductive layer 855.The part surface of this conductive layer 855 is provided with a surperficial separator 879 in regular turn and first electrode, 87, the first electrodes 87 can electrically connect with each first extension electrode 875 equally, and the other part surface of conductive layer 855 then is provided with one second electrode 85.
Between first electrode 87 and second electrode 85, do the time spent, except the back side light L4 and reverberation L5 of previous described embodiment, because first extending flute 871 and first extension electrode 875 have moved to the peripheral position of epitaxial loayer 33, therefore, the luminescent layer 332 that first electrode, 87 vertical extent positions are not removed down can act on and produce projection source, for example back side light L6 and reverberation L7, not only first electrode 87 has and second electrode, 85 approximately uniform level heights whereby, and, also can enlarge the sphere of action of luminescent layer 332.
Certainly, in order effectively to improve luminosity, conductive layer 855 also can select one, and to have the material of good reflecting effect made.
In addition, see also Fig. 9, be the structure sectional view of further embodiment of this invention; As shown in the figure, it is inverted the luminescence component 80 of the foregoing description, causes first electrode 87 to electrically connect with first conducting wire 897 of being located on the power supply substrate 89 by one first conductive projection 878.In like manner, 85 at second electrode electrically connects with one second conducting wire of being located at equally on this power supply substrate 89 895 by one second conductive projection 858, so, a flip-chip LED 90 (Flip Chip LED) can be become, back side light L4, L6 and reverberation L5, L7 can be produced equally.
Certainly, its first conductive projection 878 and second conductive projection 858 may be selected to be one and have the scolder material of conductive characteristic, the tin ball, containing metal material or any conductive materials are made, it is made, for example ceramic that power supply substrate 89 then may be selected to be the approximate material of the good or thermal coefficient of expansion of a thermal conductivity and epitaxial loayer 33, glass, aluminium nitride, silicon nitride, aluminium oxide, epoxy resin, urea resin, plastics, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate or be covered with dielectric material (as SiO2, TiO2, Si3N4 etc.) carborundum, silicon, materials such as gallium nitride.
Because, luminescence component of the present invention has first electrode 87 and second electrode 85 of approximate or par position, therefore, needed first conductive projection 878 and 858 of second conductive projections can be made as and have identical big small size in its follow-up making, so not only can conveniently make, again can be identical because of first conductive projection 878 and second conductive projection, 858 both sides active force situations, and be unlikely the situation that flip-chip LED 90 deflections take place, therefore can improve the working stability degree of assembly relatively.
Continue, see also Figure 10, be the structure sectional view of further embodiment of this invention.Though above-mentioned each embodiment is to serve as that object is discussed with ternary luminescence component or quaternary luminescence component, according to the technology of the present invention feature, the present invention also can be applicable in the luminescence component of other compound epitaxial loayer, for example the blue light emitting assembly.As shown in the figure, luminescence component 100 mainly is directly to grow up in regular turn one first material layer 931 and second material layer 933 are arranged on a LED substrate (transparent substrates) 91, and can be formed with a PN interface naturally between first material layer 931 and second material layer 933.Be provided with first extending flute 971 that can run through second material layer 933 and part first material layer 931 around the peripheral cutter earlier of luminescence component 100, and be provided with transparent contact layer, ohmic contact layer or the reflector layer 96 with conduction or reflecting effect earlier at the upper surface of second material layer 933, be provided with a separator 98 in the periphery of the reflector layer 96 and second material layer 933 again, cutter is provided with one the 3rd extending flute 951 in the appropriate location of separator 98, causes second electrode 95 directly or by reflector layer 96 to be electrically connected at second material layer 933.Can be provided with one first ring lateral electrode 974 around the peripheral of second material layer 931 and across separator 98, the first ring lateral electrode 974 can be electrically connected at first electrode 97, so also can reach to allow operating current evenly distribute, improve the luminous zone of action and cause first electrode 97 and second electrode 95 is positioned at the purpose of same level height position.
In addition, see also Figure 11, be the structure sectional view of further embodiment of this invention; As shown in the figure, it mainly is to be formed with one first material layer 331 in regular turn on an extinction substrate (GaAs substrate) 31 surfaces, behind the epitaxial loayer 33 of the luminescent layer 332 and second material layer 333, be not installed with a transparent substrates (41) on second material layer, 333 surfaces, be provided with at least one isolated groove 376 and at least one first extending flute 371 but cut a hole respectively at the upper surface of second material layer 333, second material layer 333 of each isolated groove 376 and all penetrable its vertical extent direction of first extending flute 371, luminescent layer 332 and part first material layer 331 volumes are provided with one first extension electrode 375 in first extending flute 371.Again, the appropriate location respectively at second material layer 333 is provided with one first electrode 37 and second electrode 35.Continue, epitaxial loayer 33 covered together with GaAs substrate 31 place on the power supply substrate 89 (or claim Sub Mount), first electrode 37 of epitaxial loayer 33 can be electrically connected at first conductive layer 897 of power supply substrate 89, and second electrode 35 of epitaxial loayer 33 then is electrically connected at second conductive layer 895 of power supply substrate 89.At last, utilize the semiconductor manufacture process to be removed GaAs substrate 31 again, to become a luminescence component 110.
By the power supply substrate 89 thickness to make things convenient for the subsequent manufacturing processes of luminescence component 110, and, because power supply substrate 89 is not to be designed to a light direction, therefore, it may be selected to be good or approaching with the thermal coefficient of expansion of epitaxial loayer 33 material of a thermal conductivity, with craftmanship and the useful life that helps luminescence component 110.
Because luminescence component of the present invention has first electrode 37 and second electrode 35 of approximate or par height, therefore, when forming a flip-chip LED 110 (Flip-Chip LED), and unlike existing structure, need to reach the purpose that two electrodes have the par height by the conductive projection of differing heights, therefore can directly first electrode 37 be electrically connected at first conducting wire 897, second electrode 85 then directly is electrically connected at second conducting wire 895, whereby to simplify manufacture process.
Again, see also Figure 12, be the structure sectional view of further embodiment of this invention; As shown in the figure, it mainly is that power supply substrate 89 with the foregoing description is replaced with an antistatic protection assembly 890.Wherein, ESD on the antistatic protection assembly 890 (electrostatic protection) first electrode 891 can be electrically connected at second electrode 35 of epitaxial loayer 33; its ESD second electrode 892 then is electrically connected at first electrode 37 of epitaxial loayer 33; so epitaxial loayer 33 and antistatic protection assembly 35 can form a reverse parallel connection circuit, and are combined into a luminescence component 120.When luminescence component 120 and when the static discharge phenomenon takes place in manufacturing process or use; one unusual big input voltage Vcc will be formed at the two ends of antistatic protection assembly 890; and cause the breakdown effect (Break Down) of antistatic protection assembly 890; cause extremely greatly count abnormal currents will be by antistatic protection assembly 890, and can not damage epitaxial loayer 33.
At last, see also Figure 13, be the structure sectional view of further embodiment of this invention; As shown in the figure; it mainly is to be provided with the 3rd supply circuit 997 that can electrically connect with first electrode 37 of epitaxial loayer 33 on antistatic protection assembly 990; then be provided with a separator 995 between the 3rd supply circuit 997 and the antistatic protection assembly 990; VRD (voltage adjustment) first electrode 991 is electrically connected at second electrode 35 of epitaxial loayer 33; VRD second electrode 992 then with 33 one-tenth electrical isolation aspects of epitaxial loayer; so epitaxial loayer 33 and antistatic protection assembly 990 can become the luminescence component 130 of the circuit form of connect, and the also variable voltage adjustment assembly 990 that becomes of the antistatic protection assembly 990 of script.Adjust the design that assembly 990 becomes series circuit by epitaxial loayer 33 and voltage, not only have outside the function of anti-surge voltage, also capable of being combinedly go out the close luminescence component of various driving voltages, for the combined luminescent device, for example RGB full-color light-emitting device will have very big benefit.
Aforementioned antistatic protection assembly 890 or voltage are adjusted assembly 990 and be may be selected to be diode, electrostatic discharge protective circuit or other equivalent diode that a Zener diode (Zener Diode), Schottky diode (Schottky Barrier Diode), silicon-based diode, III-V family element are constituted; the selection of its material is preferably considered still can cooperate the thermal coefficient of expansion of epitaxial loayer 33 outside the breakdown voltage (Breakdown Voltage) that luminescence component sets.
Again, in further embodiment of this invention, antistatic protection assembly 890 or voltage are adjusted assembly 990 and also can be selected to be combined with the serial or parallel connection form by a plurality of diodes.And antistatic protection assembly 890 or voltage are adjusted assembly 990 and also can be selected to be electrically connected with a plurality of epitaxial loayers 33, simultaneously a plurality of epitaxial loayers 33 are carried out antistatic pressure protection or driving voltage is adjusted function.
In sum, the present invention relates to a kind of light-emitting diode, refer to a kind of plane light-emitting diode that can be applicable to the quaternary epitaxial loayer especially, not only can make things convenient for the carrying out of subsequent manufacturing processes, can therefore increase the luminous zone of action at PN interface again, cause to be improved luminosity and useful life.
Above said content only is a preferred embodiment of the present invention, is not to be used for limiting scope of the invention process, and all equivalent variations and modifications of carrying out according to main design of the present invention, technical characterictic and spirit all should belong to the present invention's scope required for protection.
Claims (41)
1. a light-emitting diode is characterized in that, includes at least:
One epitaxial loayer includes one first material layer and one second material layer, and wherein second material layer is fixedly arranged on the upper surface of first material layer;
One transparent substrates is fixedly arranged on the upper surface of second material layer;
One first electrode is fixedly arranged on the part lower surface of this first material layer;
One second electrode is fixedly arranged on the other parts lower surface of this first material layer;
At least one extending flute can run through first material layer, and extends to the partial volume of second material layer, and is provided with an extension electrode that can electrically connect with this first electrode in extending flute; And
At least one isolated groove is located between this first electrode and second electrode, can run through first material layer, and extends to the partial volume of second material layer.
2. light-emitting diode as claimed in claim 1, its feature exists, and this first material layer lower surface is provided with a plurality of ohmic contact points, then is provided with a conductive layer between ohmic contact point, first material layer and second electrode.
3. light-emitting diode as claimed in claim 1 is characterized in that this epitaxial loayer may be selected to be one of them of a quaternary compound and ternary compound.
4. light-emitting diode as claimed in claim 1 is characterized in that, still is provided with a luminescent layer between this first material layer and this second material layer.
5. light-emitting diode as claimed in claim 1 is characterized in that, this first material layer and second material layer are respectively an AlGaInP material and form.
6. light-emitting diode as claimed in claim 1 is characterized in that, this first material layer and second material layer can be chosen as respectively an AlGaInP homostyructure, single heterojunction structure, double-heterostructure, quantum well structure one of them.
7. light-emitting diode as claimed in claim 1 is characterized in that, this transparent substrates may be selected to be a glass, sapphire, carborundum, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide, quartzy one of them.
8. light-emitting diode as claimed in claim 1 is characterized in that, still is provided with a separator in this isolated groove.
9. light-emitting diode as claimed in claim 1 is characterized in that, the part lower surface of this first material layer still is provided with a conductive layer.
10. light-emitting diode as claimed in claim 9 is characterized in that, it is made that this conductive layer also can be a reflective material.
11. light-emitting diode as claimed in claim 1 is characterized in that, this epitaxial loayer is grown up on an extinction substrate, and after the upper surface of second material layer forms this transparent substrates, removes the extinction substrate again and form.
12. light-emitting diode as claimed in claim 11 is characterized in that, this extinction substrate is a GaAs substrate.
13. light-emitting diode as claimed in claim 1 is characterized in that, this first electrode and second electrode can cover the vertical extent position of the whole first material layer lower surface, and have conduction by one respectively and the material of reflection function made.
14. light-emitting diode as claimed in claim 1 is characterized in that, this first electrode and this second electrode have approximate same level height position.
15. described light-emitting diode as claimed in claim 1, it is characterized in that include a power supply substrate, its upper surface is respectively equipped with one first conductive layer and second conductive layer, wherein the first conduction series of strata and this first electrode electrically connect, and second conductive layer then electrically connects with this second electrode.
16. light-emitting diode as claimed in claim 15, it is characterized in that, this first conductive layer can electrically connect with this first electrode by one first conductive projection, second conductive layer then electrically connects with this second electrode by one second conductive projection, causes this light-emitting diode to become a flip-chip LED.
17. light-emitting diode as claimed in claim 15, it is characterized in that, this power supply substrate can be a pottery, glass, aluminium nitride, silicon nitride, aluminium oxide, epoxy resin, urea resin, plastics, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, the carborundum that is covered with dielectric material, silicon, gallium nitride one of them.
18. light-emitting diode as claimed in claim 1 is characterized in that, the part lower surface of this first material layer still is provided with a reflector layer.
19. light-emitting diode as claimed in claim 1 is characterized in that, this extending flute is located on the periphery of this first material layer, and can run through the partial volume of second material layer, is provided with a groove separator and an extension electrode in the extending flute more in regular turn.
20. light-emitting diode as claimed in claim 1 is characterized in that, this extension electrode is a ring lateral electrode.
21. light-emitting diode as claimed in claim 1 is characterized in that, this transparent substrates may be selected to be second material layer that undopes ion and forms.
22. light-emitting diode as claimed in claim 1 is characterized in that, this transparent substrates may be selected to be an AlGaInP that undopes ion and forms.
23. light-emitting diode as claimed in claim 15; it is characterized in that; this power supply substrate can be an electrostatic protection assembly; its upper surface is respectively equipped with an ESD first electrode and an ESD second electrode; wherein ESD first electrode can electrically connect with this epitaxial loayer second electrode, and ESD second electrode then electrically connects with this epitaxial loayer first electrode.
24. light-emitting diode as claimed in claim 23 is characterized in that, this electrostatic protection assembly may be selected to be diode that a Zener diode, Schottky diode, silicon-based diode, III-V family element constituted, electrostatic discharge protective circuit one of them.
25. light-emitting diode as claimed in claim 15 is characterized in that, this power supply substrate can be a voltage and adjusts assembly, be respectively equipped with a VRD first electrode and a VRD second electrode, and VRD first electrode can be electrically connected at this epitaxial loayer two electrodes.
26. light-emitting diode as claimed in claim 25 is characterized in that, this voltage is adjusted assembly and still is provided with the 3rd supply circuit that can electrically connect with this epitaxial loayer first electrode, and still is provided with a separator between the 3rd supply circuit and the voltage adjustment assembly.
27. light-emitting diode as claimed in claim 25 is characterized in that, this voltage adjust assembly may be selected to be diode that a Zener diode, Schottky diode, silicon-based diode, III-V family element constituted, electrostatic discharge protective circuit one of them.
28. a light-emitting diode is characterized in that, includes:
One epitaxial loayer includes one first material layer and one second material layer, and wherein second material layer is fixedly arranged on surface on first material layer;
One transparent substrates is fixedly arranged on the upper surface of this second material layer;
At least one extending flute can run through first material layer, and extends to the partial volume of second material layer, is provided with a groove separator and an extension electrode in the extending flute more in regular turn, extension electrode then can be by the groove separator and with the first material layer electrical isolation;
One first electrode is fixedly arranged on the part lower surface of this first material layer, and can electrically connects with this extension electrode across a surperficial separator; And
One second electrode is fixedly arranged on the other parts lower surface of this first material layer.
29. a light-emitting diode is characterized in that, includes at least:
One epitaxial loayer includes one first material layer and one second material layer, and wherein second material layer is fixedly arranged on the upper surface of first material layer;
One first electrode is fixedly arranged on the part upper surface of this second material layer;
One second electrode is fixedly arranged on the other parts upper surface of this second material layer;
At least one extending flute can run through second material layer, and extends to the partial volume of first material layer, and is provided with an extension electrode that can electrically connect with this first electrode in extending flute; And
At least one isolated groove is located between this first electrode and second electrode, can run through second material layer, and extends to the partial volume of first material layer.
30. light-emitting diode as claimed in claim 29, it is characterized in that also include a power supply substrate, its upper surface is respectively equipped with one first conductive layer and second conductive layer, wherein first conductive layer and this first electrode electrically connect, and second conductive layer then electrically connects with this second electrode.
31. light-emitting diode as claimed in claim 30 is characterized in that, this epitaxial loayer is grown up on an extinction substrate, and after this power supply substrate and epitaxial loayer are fixed, removes the extinction substrate again and form.
32. light-emitting diode as claimed in claim 29 is characterized in that, this second material layer lower surface is provided with a plurality of ohmic contact points, then is provided with a conductive layer between ohmic contact point, second material layer and second electrode.
33. light-emitting diode as claimed in claim 29 is characterized in that, this epitaxial loayer may be selected to be one of them of a quaternary compound and ternary compound.
34. light-emitting diode as claimed in claim 30, it is characterized in that, this power supply substrate can be a pottery, glass, aluminium nitride, silicon nitride, aluminium oxide, epoxy resin, urea resin, plastics, diamond, beryllium oxide, boron nitride, circuit board, printed circuit board (PCB), PC plate, the carborundum that is covered with dielectric material, silicon, gallium nitride one of them.
35. light-emitting diode as claimed in claim 29, it is characterized in that, this isolated groove can be replaced by a groove separator and a surperficial separator, its further groove separator is located in this extending flute, between this extension electrode and this second material layer, surperficial separator then is fixedly arranged between this first electrode and second material layer, causes the extension electrode and first electrode can be respectively and the second material layer electrical isolation.
36. light-emitting diode as claimed in claim 30; it is characterized in that; this power supply substrate can be an electrostatic protection assembly; its upper surface is respectively equipped with an ESD first electrode and an ESD second electrode; wherein ESD first electrode can electrically connect with this epitaxial loayer second electrode, and ESD second electrode then electrically connects with this epitaxial loayer first electrode.
37. light-emitting diode as claimed in claim 36 is characterized in that, this electrostatic protection assembly may be selected to be diode that a Zener diode, Schottky diode, silicon-based diode, III-V family element constituted, electrostatic discharge protective circuit one of them.
38. light-emitting diode as claimed in claim 30 is characterized in that, this power supply substrate can be a voltage and adjusts assembly, be respectively equipped with a VRD first electrode and a VRD second electrode, and VRD first electrode can be electrically connected at this epitaxial loayer two electrodes.
39. light-emitting diode as claimed in claim 38 is characterized in that, this voltage is adjusted assembly and also is provided with the 3rd supply circuit that can electrically connect with this epitaxial loayer first electrode, and still is provided with a separator between the 3rd supply circuit and the voltage adjustment assembly.
40. light-emitting diode as claimed in claim 38 is characterized in that, this voltage adjust assembly may be selected to be diode that a Zener diode, Schottky diode, silicon-based diode, III-V family element constituted, electrostatic discharge protective circuit one of them.
41. a light-emitting diode is characterized in that, includes:
One epitaxial loayer includes one first material layer and one second material layer, and wherein second material layer is fixedly arranged on the upper surface of first material layer;
At least one extending flute can run through second material layer, and extends to the partial volume of first material layer, is provided with a groove separator and an extension electrode in the extending flute more in regular turn, extension electrode then can be by the groove separator and with the second material layer electrical isolation;
One first electrode is fixedly arranged on the part upper surface of this second material layer, and can electrically connects with this extension electrode across a surperficial separator; And
One second electrode is fixedly arranged on the other parts upper surface of this second material layer.
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| CNB2004100307285A CN1324719C (en) | 2004-04-01 | 2004-04-01 | Led |
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| CN102097567B (en) * | 2007-07-26 | 2013-08-07 | 晶元光电股份有限公司 | Luminous element |
| DE102008022942A1 (en) | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip |
| US8089091B2 (en) * | 2009-06-18 | 2012-01-03 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with a contact formed on a textured surface |
| DE102009060747A1 (en) * | 2009-12-30 | 2011-07-07 | OSRAM Opto Semiconductors GmbH, 93055 | Semiconductor chip |
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| CN102931313B (en) * | 2012-08-30 | 2014-11-19 | 安徽三安光电有限公司 | Inverted light emitting diode and manufacture method thereof |
| CN104600166A (en) * | 2013-10-31 | 2015-05-06 | 无锡华润华晶微电子有限公司 | LED chip structure and preparation method thereof |
| CN109599465A (en) * | 2017-09-30 | 2019-04-09 | 展晶科技(深圳)有限公司 | LED chip construction |
| CN109638132A (en) * | 2018-11-30 | 2019-04-16 | 广东德力光电有限公司 | Upside-down mounting red LED chip structure and preparation method thereof |
| CN111261766A (en) * | 2020-01-21 | 2020-06-09 | 厦门乾照光电股份有限公司 | Flip film LED chip structure and preparation method thereof |
| JP6995227B1 (en) * | 2021-01-07 | 2022-01-14 | 日機装株式会社 | Manufacturing method of semiconductor light emitting device and semiconductor light emitting device |
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