1313518 九、發明說明： 【發明所屬之技術領i或】 〜本發明係有關於〜種發光裝置，尤指-種可提高發光 亮度之發光裝置’不僅可減反射層之結構特性以維持反 射層之反射效率，並可藉由共金層而縮減發光元件與供電 基板之間的垂直距離，進而達到提高發光裝置亮度之目的。 【先前技術】 士 -發光一極體（LED ; Light-Emitting Diode)由於具備有 舞命長、體積小、耗電量少、反應速度快、無輻射及單色 性發光之特性及優點’因此被廣泛應用於指示燈、廣告看 板父通號諸燈、Ά車車燈、顯示器面板、通訊器具、消 費電子等各項產品中。 &請參閱第1圖，係為習用發光裴置之構造截面圖，一 I光元件11係包括有一透光基板113，於透光基板113之 上表面設有一第一材料層U1，並於第—材料層lu之部分 ^表面再設有一第二材料層112，而第—材料層lu與第二 料層112之間可自然形成有一可產生一色光源之pN介 面。又，於第二材料層112之上表面再設有一反射層17， :於第-材料層hi未設有第二材料層112之部分上表面 ::有-第-電極114’而反射層17之部分上表面亦設有一 厂電極116,第-電極114及第二電㈣6可藉由一錫球 及m而可分別電性連接於一供電基板13之第一供電 電杨m及第二供電電極132。於f用發絲置構造中，該 1313518 發光元件11因為設置有一反射層π，可用以反射PN介面 所產生之背向光L2’因此也使得該發光元件11所產生之投 射光源可至少包括有正向光L1及背向光L2，藉此以提高該 發光元件11之發光亮度。 然而，在發光元件11完成反射層17固定後之後續製 程中’往往還需要經過一些高溫的熱處理程序，例如：第 二電極116之形成等，其高溫熱處理之熱量便會傳導至該 反射層17，此時，該反射層17之結構或特性便容易因高溫 接觸而遭受破壞，又或者因高溫而造成一些錫球117内之 金屬材料分子進入反射層17’致使該反射層17之反射率下 降，進而影響到PN介面所產生之背向光L2之導出率及發 光裝置之整體發光亮度。 另外，反射層17固於於第二材料層112上，在製作上 比較困難，且為了選擇反射層17與第二材料層丨12具有較 佳之晶格結構近似性及導電性，其反射層17所能選擇之材 料種類亦將受到限制。 【發明内容】 為此’如何針對上述習用技術之缺點，以設計出一種 新穎的發光裝置，不僅可保護反射層之結構特性以維持反 射效率，且又可提高發光裝置亮度之目的。爰是， 本發明之主要目的，在於提供一種可提高發光亮度之 發光I置，可有效解決上述習用發光裝置所面臨之技術困 難點。 1313518 本發明之次要目的，在於提供一種可提高發光亮度之 發光裝置’其反射層主要係固設於導電基板上，而不直接 固設於發光元件内，致使發光元件所發出光源，可直接經 由該反射層之導正而向適當方向投射，例如側向光源，以 有效提高發光裝置之發光效率及發光亮度。 本發明之又一目的，在於提供一種可提高發光亮度之 發光裝置’其反射層係直接固設於一供電基板上，藉此 簡化反射層之後續製作，且又可大幅增加反射層之材料可 選擇種類。 本發明之又一目的，在於提供一種可提高發光亮度之 發光裝置，藉由一共金層而可將發光元件固設在一供電夷 板上，利用共金層之低厚度特性，以減少發光元件與供電 基板間的垂直距離，不僅可有效排除發光元件之工作高 溫’以峄保發光元件之可靠 用錫球在植球程序上之困難點 本發明之又一目的，在於提供一種可提高發光亮度之 發光裝置，其發光元件之第一電極可與第二電極位於^似 同一水平位置，因此可有利於後續製程之進行。 一因此，為達成上述目的，本發明係提供—種可提高潑 ^亮度之發光裝置，，其主要係在—供電基板之上表面^ 有至少—反射層，反射層之部分上表面再設有至一供電滞 極’而供電電極可藉由—共金層而電性連接有—發光元件項 又，為達上述目的，本發明提供另一種可提高發 又之發光裝置，其主要係在—供電基板之±表面設有至^ 1313518 一反射層 極，而供電H層之部分上表面再分顺有至少—#電電 又，為達上黏固層而電性連接有—發光元件。 度之替先敦置供另一種可提高發光亮 一供電電核，祕=供電基板之上表面設有至少 發光元件。極可#由'共金相電性連接有一 【實施方式】 之功對本發明之特徵、結構及所達成 配合詳細之朗之說識’難吨佳之實施圖例及 光亮2光;例::別為本發明-種可提高發 發明可提高發光亮度:發光裝置圖::，本 21及一供電基板23，其中，供料Γ件 有-反射声2n㈣97总電土板23之上表面分別設 射芦27二本曰由一導電材質所製成時，反 ί =上表面尚可設有—透光絕緣層29,或如第3圖所 4 -隔離間隙（375)以隔離兩側之反射層（37ι、 375)。反之，歧射層27係為〜絕緣物㈣製成時，則就 不再形成-透光絕緣層29。而透光絕緣層29(或反射層2?) 之部分上表面再個別設有-第—供電電極231及第二 電極232。 又’發光凡件21主要係包括有—透光基板213，並於 透光基板213之上表面設有一第一材料層211，而第一材料 1313518 層211之上表面再設有一第二材料層212，第一材料層211 與第二材料層212之間可自然形成一可產生一色光源之pN 介面。鑿設有至少一可貫穿該第二材料層212及部分第一 材料層211體積之延伸凹槽218,延伸凹槽218之内表面及 弟一材料層212之部分上表面連設有一隔離層219，且在隔 離層219表面設有一第一電極215,第一電極215可電性連 接於第一材料層211。又，於第二材料層212之另一侧部分 上表面則設有一相對應之第二電極217,而第一電極215及 一第二電極217係可分別經由一黏固層28而電性連接於供 電基板23上相對應之第一供電電極231及第二供電電極 232。 反射層27係可用於反射pn介面所產生之背向光L2， 使得該發光元件21所產生之投射光源至少可包括有一正向 光L1及背向光L2，藉此達到可提高該發光元件21發光亮 度之目的。 由於本發明之反射層27係直接固設於供電基板23之 上表面，而不同於習用構造直接固設於第二材料層212上， 因此可有效減少發光元件21在後續製程中因為工作高溫而 破壞反射層27結構完整性之弊端，以維持其光源反射率及 提兩發光亮度。 當然，該反射層27由於係直接固設於供電基板23上， 其製程相對於將反射層固設於第二材料層表面之習用技術 簡單’且材質選擇上亦可更多樣化，不論是導體材質或非 導體材質皆可適用，因此可達到本發明之發明目的。 1313518 同之二3第:電極215及第二電請具有近似或相 接於第一此其可輕易經由該黏固層28而置放及連 牧a罘一供電電極 _ 用覆晶構造發光事置一 電極232上，不必如習 導電黏固層，因此V右：大小不一之錫球來當作 Q此非吊有利於其後續製程之進行。 金層H發^黏固層28係可選擇為—錫球或為一共 ^ 1C)。若該黏固層28係選用一丘全> 材質時， 其可將發光元件21之卜本u /u、用，、金廣材貝时1313518 IX. Description of the Invention: [Technology of the Invention] or the present invention relates to a light-emitting device, in particular, a light-emitting device capable of improving light-emitting brightness, which not only can reduce the structural characteristics of the reflective layer to maintain the reflective layer The reflection efficiency can reduce the vertical distance between the light-emitting element and the power supply substrate by the common gold layer, thereby achieving the purpose of improving the brightness of the light-emitting device. [Prior Art] Light-Emitting Diode (LED) has the characteristics and advantages of long life, small size, low power consumption, fast response, no radiation and monochromatic illumination. It is widely used in various products such as indicator lights, advertising billboards, parent-child lights, display lights, display panels, communication equipment, and consumer electronics. 1 is a structural cross-sectional view of a conventional light-emitting device. The I-light element 11 includes a transparent substrate 113, and a first material layer U1 is disposed on the upper surface of the transparent substrate 113. A portion of the first layer of the material layer lu is further provided with a second material layer 112, and a pN interface capable of generating a color light source is naturally formed between the first material layer lu and the second material layer 112. Further, a reflective layer 17 is further disposed on the upper surface of the second material layer 112. The upper surface of the second material layer 112 is not disposed on the first material layer hi: the -first electrode 114' and the reflective layer 17 A part of the upper surface is also provided with a factory electrode 116. The first electrode 114 and the second electric (four) 6 can be electrically connected to the first power supply and the second power supply of the power supply substrate 13 respectively by a solder ball and m. Electrode 132. In the configuration of the hairline of the 131318, the 1313518 light-emitting element 11 can be used to reflect the back light L2 generated by the PN interface because the reflective layer π is disposed. Therefore, the projection light source generated by the light-emitting element 11 can include at least The forward light L1 and the back light L2 are used to increase the light-emitting luminance of the light-emitting element 11. However, in the subsequent process after the light-emitting element 11 completes the fixing of the reflective layer 17, it is often necessary to undergo some high-temperature heat treatment process, for example, the formation of the second electrode 116, etc., and the heat of the high-temperature heat treatment is conducted to the reflective layer 17 At this time, the structure or characteristics of the reflective layer 17 are easily damaged by high temperature contact, or some metal material molecules in the solder ball 117 enter the reflective layer 17' due to high temperature, so that the reflectivity of the reflective layer 17 is lowered. Further, it affects the lead-out rate of the back light L2 generated by the PN interface and the overall light-emitting brightness of the light-emitting device. In addition, the reflective layer 17 is fixed on the second material layer 112, which is difficult to fabricate, and the reflective layer 17 has a better lattice structure approximation and conductivity for selecting the reflective layer 17 and the second material layer 丨12. The types of materials that can be selected will also be limited. SUMMARY OF THE INVENTION To this end, it is possible to design a novel light-emitting device that not only protects the structural characteristics of the reflective layer to maintain the reflection efficiency, but also enhances the brightness of the light-emitting device. Therefore, the main object of the present invention is to provide a light-emitting I which can improve the luminance of light emission, and can effectively solve the technical difficulties faced by the conventional light-emitting device. 1313518 A secondary object of the present invention is to provide a light-emitting device capable of improving the brightness of a light-emitting device, wherein the reflective layer is mainly fixed on the conductive substrate, and is not directly fixed in the light-emitting element, so that the light source emitted by the light-emitting element can be directly Projecting in the appropriate direction through the conduction of the reflective layer, for example, a lateral light source, to effectively improve the luminous efficiency and the luminance of the light-emitting device. Another object of the present invention is to provide a light-emitting device capable of improving the brightness of a light-emitting device, wherein the reflective layer is directly fixed on a power supply substrate, thereby simplifying the subsequent fabrication of the reflective layer, and substantially increasing the material of the reflective layer. Select the category. Another object of the present invention is to provide a light-emitting device capable of improving the brightness of a light-emitting device, wherein the light-emitting element can be fixed on a power supply board by using a common gold layer, and the low-thickness characteristic of the common gold layer is utilized to reduce the light-emitting element. The vertical distance between the power supply substrate and the power supply substrate can not only effectively eliminate the working high temperature of the light-emitting element to ensure the reliability of the solder ball in the ball-carrying process. Another object of the present invention is to provide a light-emitting brightness. In the illuminating device, the first electrode of the illuminating element can be located at the same horizontal position as the second electrode, so that the subsequent process can be facilitated. Therefore, in order to achieve the above object, the present invention provides a light-emitting device capable of improving the brightness of a liquid crystal, which is mainly provided on the surface of the power supply substrate, at least a reflective layer, and a portion of the upper surface of the reflective layer is further provided. The power supply electrode can be electrically connected to the light-emitting element by a common gold layer. To achieve the above object, the present invention provides another light-emitting device capable of improving the hair, which is mainly The surface of the power supply substrate is provided with a reflective layer pole, and a portion of the upper surface of the power supply H layer is further divided into at least an electric current, and a light-emitting element is electrically connected to the upper adhesive layer. The first is for the other to improve the illumination. A power supply core, secret = at least the light-emitting components on the upper surface of the power supply substrate.极可# From the common metallurgical electrical connection, there is an implementation of the present invention. The characteristics, structure and the details of the cooperation are well defined. The implementation of the legend and the light 2 light; Example: The invention can improve the luminous brightness of the invention: the light-emitting device::, the present invention 21 and a power supply substrate 23, wherein the feeding element has a reflection sound 2n (four) 97, and the upper surface of the total electric earth plate 23 is respectively provided with a reed When the 27 bismuth is made of a conductive material, the upper surface may be provided with a light-transmissive insulating layer 29, or as shown in Fig. 3, an isolation gap (375) to isolate the reflective layers on both sides ( 37ι, 375). On the other hand, when the uneven layer 27 is made of the insulating material (four), the light-transmitting insulating layer 29 is no longer formed. Further, a part of the upper surface of the light-transmitting insulating layer 29 (or the reflective layer 2?) is further provided with a -first power supply electrode 231 and a second electrode 232. In addition, the 'light-emitting device 21 mainly includes a light-transmitting substrate 213, and a first material layer 211 is disposed on the upper surface of the transparent substrate 213, and a second material layer is further disposed on the upper surface of the first material 1313518. 212. A pN interface capable of generating a color light source is naturally formed between the first material layer 211 and the second material layer 212. An extension groove 218 is formed in the at least one second material layer 212 and a portion of the first material layer 211. The inner surface of the extension groove 218 and a portion of the upper surface of the material layer 212 are provided with an isolation layer 219. A first electrode 215 is disposed on the surface of the isolation layer 219, and the first electrode 215 is electrically connected to the first material layer 211. Further, a second electrode 217 is disposed on the upper surface of the other side of the second material layer 212, and the first electrode 215 and the second electrode 217 are electrically connected via a bonding layer 28, respectively. The first power supply electrode 231 and the second power supply electrode 232 corresponding to the power supply substrate 23 are provided. The reflective layer 27 can be used to reflect the back light L2 generated by the pn interface, so that the projection light source generated by the light emitting element 21 can include at least one forward light L1 and back light L2, thereby improving the light emitting element 21. The purpose of the brightness of the light. Since the reflective layer 27 of the present invention is directly fixed on the upper surface of the power supply substrate 23, and is different from the conventional structure directly fixed on the second material layer 212, the light-emitting element 21 can be effectively reduced in the subsequent process because of high operating temperature. The disadvantages of destroying the structural integrity of the reflective layer 27 are maintained to maintain the reflectivity of the light source and to raise the brightness of the two light sources. Of course, the reflective layer 27 is directly fixed on the power supply substrate 23, and the manufacturing process is simpler than the conventional method of fixing the reflective layer on the surface of the second material layer, and the material selection can be more diverse, whether Both the conductor material and the non-conductor material can be applied, so that the object of the invention can be achieved. 1313518 Same as the second 3rd: the electrode 215 and the second electric power have approximating or in contact with the first one, which can be easily placed through the adhesive layer 28 and connected with a power supply electrode _ with a flip chip structure It is not necessary to have a conductive adhesive layer on the electrode 232. Therefore, the V right: a solder ball of different sizes is regarded as a non-hanging of the Q to facilitate the subsequent process. The gold layer H hair ^ adhesive layer 28 can be selected as - tin ball or a total of ^ 1C). If the adhesive layer 28 is made of a full material, it can be used for the light-emitting element 21, u / u, use, and gold wide material
垂直距離Η縮減到5=與=基板23之上表—^ 内，皆比㈣心 之内’甚至到最佳狀況之l〇um以 狄二：約1〇〇咖之高度小，如此，便可有 皿傳導時之作用距離，以方便將發光元件21之工 ^二皿利料金層28㈣速騎科餘板Μ或外界 丘Z以增加發光兀件21之發光可靠性及使用壽命。且， 1層28之作用寬度亦可隨時調整科於錫球之寬度，亦 I藉此以擴大反射層2?之作用面積及發絲置之發光亮 度。 本發明之發光元件21係可選擇為一氮化合物，如：氮鲁 銦化鎵（InGaN)、氮化鎵（GaN)或氮化銘鎵銦（八似㈣） 等材料’亦可選擇為1元化合物或—三元化合物例如： 鎵（GaAsP)、坤化銘鎵（A1GaAs)或石鼻化銘嫁銦 (AlGalnP)等材料。 再者’請參閱第3圖’係為本發明發光裝置-較佳實 施例之構造截面圖；如圖所示，在本實施例中，供電基板 23之反射層371、375並非如前述實施例中設置在第一供電The vertical distance contraction is reduced to 5============================================================================================= The distance of the dish can be used to facilitate the light-emitting element 21 to facilitate the luminous reliability and the service life of the light-emitting element 21 by increasing the thickness of the light-emitting element 21 (4). Moreover, the width of the function of the first layer 28 can also be adjusted at any time to adjust the width of the tin ball, thereby increasing the effective area of the reflective layer 2 and the brightness of the hair. The light-emitting element 21 of the present invention may be selected from a nitrogen compound such as a material such as: InGaN, GaN or GaN (Eight), or may be selected as 1 The meta-compound or the ternary compound is, for example, gallium (GaAsP), kunhuaming gallium (A1GaAs) or stone nasal indium (AlGalnP). Further, 'Please refer to FIG. 3' as a structural cross-sectional view of a preferred embodiment of the present invention; as shown, in the present embodiment, the reflective layers 371, 375 of the power supply substrate 23 are not as in the foregoing embodiment. Set in the first power supply
10 1313518 电極33、弟二供電電極332與供電基 別固設於未被第-供電電極331及1 之間’而是分 蓋之供電基板23的部分上夹$ —仏電電極332所覆 可設有-隔離間隙375。又，第一供 37卜375之間 電極332將被設置鄰近於發光元件^之中31與第二供電 -較佳實施例中，兩者之水平距離L 、位置而且在 而發先兀件31之弟—電極315與第二電極 變設置位置，藉此，將使得發光元件 對改 丨文忡如尤兀件31經反射層371、 作用而產生更多的背向側光L3，,x達顺高該發光 光亮度之目的。 & 接續’請參閱第4A圖及第4B圖，係分別為本發 發光裝置又-實施例之構造截面圖及供電基板俯視圖；如 圖所示，在本實施例中，反射層47係由—非導體物質所製 成，其上表面設有複數個第一供電電極431與第二供電電 極432，，而發光元件41之第一電極415及第二電極4 = 也相對應改變其設置數量及位置，藉此以擴大工作電流之 均勻分佈能力，而可提高發光元件41的工作效率及發光亮 度。 最後’請參閱第5圖，係為本發明發光裝置又—實施 例之構造截面圖；如圖所示，在本實施例中，‘其主要係將 前述實施例之發光元件改為一習用之平面型發光元件51， 第二材料層212僅設於第一材料層211之部分上表面，於 第一材料層211未被第二材料層212覆蓋之部分上表面設 有一第一電極215,而苐二材料層212另一側之部分上表面 11 Ϊ313518 則相對設有一第二電極217 艿结-兩I 〜〜丨丁 •疋弟一電極215 =二=m可分別以一黏固層(例如錫球)58而電性 =^23上相對應之第-供電電極231及第二供 之門:::Γ極231、第二供電電極232與供 =間個別反射層57卜572，反射層571、572係由一 572==成，因此必須相互_，但藉由反射層57i、 572 ,又置於供電基板23上，而可達到有利於發光裝 續製程及提高發光亮度之目的。 χ 當然，雖然在上述實施例中，供雷其 、 電極為敘述對象，作在不鬥與 土 疋以兩個供電10 1313518 The electrode 33, the second power supply electrode 332 and the power supply base are fixed on the portion of the power supply substrate 23 which is not covered between the first power supply electrodes 331 and 1 but is covered by the power electrode substrate 332. An isolation gap 375 can be provided. Moreover, the first electrode 37 375 between the electrodes 332 will be disposed adjacent to the light-emitting element 31 and the second power supply - in the preferred embodiment, the horizontal distance L, the position of the two, and the first element 31 The electrode 315 and the second electrode are disposed at a position, thereby causing the illuminating element to generate more back side light L3, such as the 兀 兀 31, through the reflective layer 371. The purpose of the brightness of the illuminating light is high. <Continuously, please refer to FIG. 4A and FIG. 4B, which are respectively a structural sectional view of the light-emitting device of the present invention and a top view of the power supply substrate; as shown in the figure, in the present embodiment, the reflective layer 47 is composed of - a non-conductor material, the upper surface of which is provided with a plurality of first power supply electrodes 431 and second power supply electrodes 432, and the first electrode 415 and the second electrode 4 of the light-emitting element 41 are also changed correspondingly. And the position, thereby increasing the working ability of the light-emitting element 41 and the light-emitting brightness by expanding the uniform distribution capability of the operating current. Finally, please refer to FIG. 5, which is a cross-sectional view of a light-emitting device according to another embodiment of the present invention; as shown in the figure, in the present embodiment, 'the main purpose is to change the light-emitting element of the foregoing embodiment to a conventional one. The planar light-emitting element 51, the second material layer 212 is disposed only on a portion of the upper surface of the first material layer 211, and a first electrode 215 is disposed on the upper surface of the portion of the first material layer 211 that is not covered by the second material layer 212. The upper surface 11 Ϊ 313518 of the other side of the second material layer 212 is oppositely provided with a second electrode 217 艿 junction - two I ~ ~ 丨 疋 疋 一 an electrode 215 = two = m can be a separate layer (for example) The solder ball 58 and the electric power=^23 corresponding to the first-power supply electrode 231 and the second supply gate::: the drain 231, the second power supply electrode 232 and the supply-individual reflective layer 57 572, the reflective layer 571 and 572 are formed by a 572==, so they must be mutually _, but they are placed on the power supply substrate 23 by the reflective layers 57i and 572, thereby achieving the purpose of facilitating the illuminating process and improving the illuminating brightness. χ Of course, although in the above embodiment, the lightning supply and the electrode are the object of the description, the two are powered by the non-bucket and the soil.
Ml但在不同實施例中，供電電極 個或複數個，以搭配不同形態之 ’、、、 驻罢文β萝θ ’么光70件。例如，若發光 裝置不疋覆日日構造，則供電基板上亦可僅讯 及-黏固層而與-發光元件之底侧電極電; 兀件，頂側電極則可電性連接於另一供電電路上。X “ 綜上所述，當知本發明係有關於 種可提高發光亮度之發綠置，不财 特性以維持反射戶之反舢 、， 隻汉射廣之10構 # if #^ a > 、，亚可藉由共金層而縮小發 之間的垂直距離’進而達到提高發2 置儿展之目的。故本發明實為一舍 供產業功效者應符合專利件、===可 發明專财請，料*審杳委員C賜^;=提請 實感德便。 -Μ早日賜予本發明專利， 淮以上所述者’僅為本發明之一較佳實施例而已，並 12 Ϊ313518 本發明實施之範圍，即凡依本發明申請專利範 =迷之雜、構造、特徵、精神及方法所為之均等^ ，、修傅，均應包括於本發明之中請專利範_。 【圖式簡單說明】 第1圖：係習用發光装置之構造截面圖。 第2圖.係本發明發光裝置—實關之構造截面圖。 第3圖：係本發明發光裝置—較佳實施例之構造截面圖。 第4A圖：係本發明發光裝置又—實施例之構造截面圖。 第4B圖.係本發明如第4A圖所示實施例之供電基极俯 視圖。 第5圖：係本發明發光裝置又一實施例之構造截面圖。 【主要元件符號說明】 11 發光元件 111 第一材料層 112 第材料層 113 透光基板 114 弟一電極 116 第二電極 115 錫球 117 錫球 13 供電基板 131 第一供電電極 132 第二供電電極 17 反射層 21 發光元件 211 第一材料層 212 第—材料層 213 透光基板 215 弟一電極 217 第二電才亟 218 延伸凹槽 219 隔離層 13 1313518 23 供電基板 231 第一供電電極 232 第二供電電極 27 反射層 28 黏固層 29 透光絕緣層 31 發光元件 315 第一電極 317 第二電極 331 第一供電電極 332 第二供電電極 371 反射層 375 反射層 377 隔離間隙 41 發光元件 415 第一電極 417 第二電極 431 第一供電電極 432 第二供電電極 47 反射層 51 發光元件 571 反射層 572 反射層 58 錫球 585 錫球 14Ml, but in different embodiments, one or more of the power supply electrodes are used to match the different forms of ',,,,,,,,,,,,,,,,,,,,,,,,, For example, if the illuminating device does not cover the day-to-day structure, the power supply substrate may only be electrically connected to the bottom layer electrode of the illuminating element, and the top side electrode may be electrically connected to the other. On the power supply circuit. X “ In summary, when I know that the invention is related to the kind of greening that can improve the brightness of the light, and the characteristics of the money are not to maintain the reflection of the reflection household, only the Hanguang Guangzhi 10 construct # if #^ a > , by the common gold layer to reduce the vertical distance between the hair', and thus achieve the purpose of improving the development of the children's exhibition. Therefore, the present invention is a product for industrial use should comply with the patented, === can be invented Special money please, material * review committee member C give ^; = draw the real feelings. - Μ early to give the invention patent, the above mentioned above is only a preferred embodiment of the present invention, and 12 Ϊ 313518 the present invention The scope of implementation, that is, the patents of the invention, the structure, the characteristics, the spirit, and the method of equalization, and the repair, should be included in the invention. Description: Fig. 1 is a structural sectional view of a conventional light-emitting device. Fig. 2 is a structural sectional view of a light-emitting device according to the present invention. Fig. 3 is a structural sectional view of a light-emitting device of the present invention. Figure 4A is a cross-sectional view showing the structure of the light-emitting device of the present invention. Fig. 4B is a top view of the power supply base of the embodiment of the present invention as shown in Fig. 4A. Fig. 5 is a structural sectional view showing still another embodiment of the light-emitting device of the present invention. [Description of main components] 11 Light-emitting element 111 First material layer 112, first material layer 113, transparent substrate 114, first electrode 116, second electrode 115, solder ball 117, solder ball 13, power supply substrate 131, first power supply electrode 132, second power supply electrode 17, reflective layer 21, light-emitting element 211, first material layer 212 - material layer 213 transparent substrate 215 first electrode 217 second electric port 218 extension groove 219 isolation layer 13 1313518 23 power supply substrate 231 first power supply electrode 232 second power supply electrode 27 reflective layer 28 adhesion layer 29 Light insulating layer 31 light emitting element 315 first electrode 317 second electrode 331 first power supply electrode 332 second power supply electrode 371 reflective layer 375 reflective layer 377 isolation gap 41 light emitting element 415 first electrode 417 second electrode 431 first power supply electrode 432 Second power supply electrode 47 reflective layer 51 light-emitting element 571 reflective layer 572 reflective layer 58 tin ball 585 solder ball 14