CN208127231U - Improve chip structure, light emitting diode (LED) display screen and the display device of metal migration - Google Patents
Improve chip structure, light emitting diode (LED) display screen and the display device of metal migration Download PDFInfo
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- CN208127231U CN208127231U CN201820695751.3U CN201820695751U CN208127231U CN 208127231 U CN208127231 U CN 208127231U CN 201820695751 U CN201820695751 U CN 201820695751U CN 208127231 U CN208127231 U CN 208127231U
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Abstract
The application discloses a kind of chip structure of improvement metal migration,Light emitting diode (LED) display screen and display device,The chip structure for improving metal migration includes substrate,The first type semiconductor layer on substrate,Active layer,Second type semiconductor layer,And first electrode,Second electrode,The first antimigration electrode of first electrode is completely covered and the second antimigration electrode of second electrode is completely covered,Antimigration electrode is provided with due to increasing,Original electrode is completely covered in the antimigration electrode,And it is electrically connected with semiconductor layer,So that antimigration electrode it is fully wrapped around live original electrode,The Cr layer in original first electrode and second electrode is avoided to expose in air,Occurs the abnormal phenomenon of Cr metal migration in normal use process so as to avoid display chip,It ensure that Cr layers of adhesive attraction,And then the problem of avoiding the electrode delamination of LED chip structure.
Description
Technical field
The utility model relates to technical field of semiconductor device more particularly to it is a kind of improve metal migration chip structure,
Light emitting diode (LED) display screen and display device.
Background technique
LED (Light-Emitting Diode, light emitting diode) is referred to as forth generation lighting source or green light source, tool
There is the features such as energy-saving and environmental protection, service life are long, small in size, is widely used in various instructions, display, decoration, backlight, general lighting
With the fields such as urban landscape.According to the difference for using function, can be divided into information show, signal lamp, Vehicular lamp, liquid
Brilliant screen back light source, five major class of general illumination.
Currently used LED display application is typically used as on the ad display screen curtain of indoor and outdoor, is arranged on large screen multiple
Multiple LED lamp beads of array arrangement light shape by each LED lamp bead of control using each LED lamp bead as a pixel
State controls entire large screen display picture.
But due to the problem of LED chip is frequently present of electrode delamination in the prior art, there is portion so as to cause display screen
Divide dim spot, display picture is imperfect.
Utility model content
In view of this, the present invention provides it is a kind of improvement metal migration chip structure, light emitting diode (LED) display screen and
There is dim spot to solve display screen caused by the electrode of LED chip in the prior art is often fallen off, causes to show picture in display device
The incomplete problem in face.
To achieve the above object, the utility model provides the following technical solutions：
A kind of chip structure improving metal migration, including：
Substrate；
Positioned at the substrate surface, and the first type semiconductor layer, active set gradually along the direction away from the substrate
Layer, the second type semiconductor layer；
Deviate from the transparency conducting layer of the substrate surface positioned at second type semiconductor layer；
Deviate from the passivation layer of the substrate surface positioned at the transparency conducting layer；
First electrode, the first electrode are located in first type semiconductor layer, and with first type semiconductor layer
It is electrically connected；
Second electrode, the second electrode are located on the transparency conducting layer, and are electrically connected with the transparency conducting layer；
Wherein, the first electrode and second electrode edge deviate from the Cr layer that the direction of the substrate successively includes stacking
With Al layers；
Further include：
First antimigration electrode, the first antimigration electrode are completely covered the first electrode, and with first type
Semiconductor layer is electrically connected；
Second antimigration electrode, the second antimigration electrode are completely covered the second electrode, and transparent lead with described
Electric layer is electrically connected.
Preferably, the material and structure of the first antimigration electrode and the second antimigration electrode are all the same.
Preferably, the first antimigration electrode includes at least one first metallic stacked structure.
Preferably, first metallic stacked structure successively includes the Ti layer being laminated, Pt along the direction away from the substrate
Layer and Au layers.
Preferably, the material and structure of the first electrode and the second electrode are all the same.
Preferably, the first electrode includes at least one second metallic stacked structure, second metallic stacked structure
Deviate from the surface of the substrate positioned at described Al layers.
Preferably, second metallic stacked structure successively includes the Ti layer and Pt being laminated along the direction away from the substrate
Layer.
Preferably, first type semiconductor layer is n type semiconductor layer；Second type semiconductor layer is P-type semiconductor
Layer.
Preferably, the n type semiconductor layer is n type gallium nitride layer；The p type semiconductor layer is p-type gallium nitride layer.
The utility model also provides a kind of light emitting diode (LED) display screen, moves including improvement metal described in any of the above one
The chip structure of shifting.
The utility model also provides a kind of light emitting display device, including diode displaying recited above
Screen.
It can be seen via above technical scheme that the chip structure provided by the utility model for improving metal migration, including：Lining
Bottom；Positioned at the substrate surface, and set gradually along the direction away from the substrate the first type semiconductor layer, active layer, the
Two type semiconductor layers；Deviate from the transparency conducting layer of the substrate surface positioned at second type semiconductor layer；Positioned at described transparent
Conductive layer deviates from the passivation layer of the substrate surface；First electrode, the first electrode are located in first type semiconductor layer,
And it is electrically connected with first type semiconductor layer；Second electrode, the second electrode are located in second type semiconductor layer,
And it is electrically connected with second type semiconductor layer；It is characterized in that, the first electrode and the second electrode are along away from institute
The direction for stating substrate successively includes the Cr layer being laminated and Al layers；Further include：First antimigration electrode, the first antimigration electrode
The first electrode is completely covered, and is electrically connected with first type semiconductor layer；Second antimigration electrode, described second is anti-
The second electrode is completely covered in migration electrode, and is electrically connected with second type semiconductor layer.
Namely increases setting size in the first electrode of LED chip in the prior art in the utility model and be greater than the first electricity
First antimigration electrode of pole increases the second antimigration electrode that setting size is greater than second electrode on the second electrode, uses
Original electrode is completely covered in antimigration electrode, and is electrically connected with semiconductor layer, so that the fully wrapped around firmly original of antimigration electrode
The electrode come avoids the Cr layer in original first electrode and second electrode from exposing in air, so as to avoid display chip
Occur the abnormal phenomenon of Cr metal migration in normal use process, ensure that Cr layers of adhesive attraction, and then avoid LED core
The problem of electrode delamination of chip architecture.
The utility model also provides the light-emitting diode screen and packet of a kind of chip structure using the migration of above-mentioned improvement metal
Light emitting display device containing the light emitting diode (LED) display screen, due to using the chip knot of above-mentioned improvement metal migration
Structure, electrode compared with the existing technology in LED chip structure electrode, it is stronger, it is not easily to fall off, to ensure that luminous
The display natural rate of interest of LED chip in diode display, and then ensure that the display effect of light emitting display device.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is the structural schematic diagram of LED chip structure in the prior art；
Fig. 2 is a kind of structural schematic diagram of chip structure for improving metal migration provided by the embodiment of the utility model；
Fig. 3 is a kind of structural schematic diagram of first antimigration electrode provided by the embodiment of the utility model；
Fig. 4 is a kind of structural schematic diagram of first electrode provided by the embodiment of the utility model；
Fig. 5 is a kind of light emitting diode (LED) display screen structural schematic diagram provided by the embodiment of the utility model；
Fig. 6 is a kind of light emitting display device structural schematic diagram provided by the embodiment of the utility model.
Specific embodiment
Just as described in the background section, the problem of electrode delamination being frequently present of due to LED chip in the prior art, thus
LED display is caused part dim spot occur, display picture is imperfect.
Inventors have found that LED chip structure is as shown in Figure 1, include in the prior art：
Substrate 01, and n type gallium nitride layer 02, active layer 03 and p-type gallium nitride layer 04 on substrate 01；
Transparency conducting layer 05 and passivation layer 06 on p-type gallium nitride layer 04；
N-type electrode opening is offered on transparency conducting layer 05, and P-type electrode opening is offered on passivation layer 06；
N-type electrode 07 in N-type electrode opening, N-type electrode 07 are located on n type gallium nitride layer 02, and nitrogenize with N-type
Gallium layer 02 is electrically connected；
P-type electrode 08 in P-type electrode opening, P-type electrode 08 is located on transparency conducting layer 05, and and electrically conducting transparent
Layer 05 is electrically connected.
Wherein, passivation layer 06 generallys use silica；Transparency conducting layer 05 generallys use ITO (tin indium oxide) material；
And P-type electrode 08 and N-type electrode 07 use multiple layer metal stepped construction.Common metal laminate structure is：Along away from substrate
Cr layer that direction is set gradually, Al layers, Ti layers, Pt layers, Au layers of reflecting electrode, wherein in electrode design, Al layers main to be risen
To reflex, and Cr layers exist mainly as contact layer and adhesion layer, and Cr layers for by transparency conducting layer and positioned at Cr layers
Al layer reflecting layer be bonded together, or n type semiconductor layer and the Al layer reflecting layer on Cr layer are bonded together.
And inventors have found that there is the main reason for electrode delamination and be：Due to the single-point demand for control of display screen, work as LED
When chip structure is in OFF state, chip is in negative bias pressure condition, and since Cr metal belongs to active metal, when in high humidity
Under degree, negative bias pressure condition, it occur frequently that, there is metal Cr ELECTROMIGRATION PHENOMENON in electrochemical reaction.And Cr layers of metal of thickness is usual
It is relatively thin, when electromigration occurs in metal Cr, adhesive attraction is lost, so as to cause falling off for chip electrode, and then is shown
Shield dim spot, shows the incomplete phenomenon of picture.
Based on this, the utility model provides a kind of chip structure of improvement metal migration, including：
Substrate；
Positioned at the substrate surface, and the first type semiconductor layer, active set gradually along the direction away from the substrate
Layer, the second type semiconductor layer；
Deviate from the transparency conducting layer of the substrate surface positioned at second type semiconductor layer；
Deviate from the passivation layer of the substrate surface positioned at the transparency conducting layer；
First electrode, the first electrode are located in first type semiconductor layer, and with first type semiconductor layer
It is electrically connected；
Second electrode, the second electrode are located on the transparency conducting layer, and are electrically connected with the transparency conducting layer；
Wherein, the first electrode and second electrode edge deviate from the Cr layer that the direction of the substrate successively includes stacking
With Al layers；
Improving the chip structure that metal migrates further includes：
First antimigration electrode, the first antimigration electrode are completely covered the first electrode, and with first type
Semiconductor layer is electrically connected；
Second antimigration electrode, the second antimigration electrode are completely covered the second electrode, and transparent lead with described
Electric layer is electrically connected.
Increase setting size in the utility model in the first electrode of LED chip in the prior art and is greater than first electrode
First antimigration electrode is increased the second antimigration electrode that setting size is greater than second electrode on the second electrode, is moved using anti-
Original electrode is completely covered in shift electrode, and is electrically connected with semiconductor layer, so that antimigration electrode is fully wrapped around firmly original
Electrode avoids the Cr layer in original first electrode and second electrode from exposing in air, so as to avoid display chip just
Occur the abnormal phenomenon of Cr metal migration during being often used, ensure that Cr layers of adhesive attraction, and then avoid LED chip knot
The problem of electrode delamination of structure.
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 2 is referred to, Fig. 2 is a kind of structure of chip structure for improving metal migration provided by the embodiment of the utility model
Schematic diagram；It is provided by the embodiment of the utility model it is a kind of improve metal migration chip structure include：Substrate 1；Positioned at 1 table of substrate
Face, and the first type semiconductor layer 2, active layer 3, the second type semiconductor layer 4 set gradually along the direction away from substrate 1；It is located at
Second type semiconductor layer 4 deviates from the transparency conducting layer 5 on 1 surface of substrate；Deviate from the passivation on 1 surface of substrate positioned at transparency conducting layer 5
Layer 6；First electrode 7, first electrode 7 are located in the first type semiconductor layer 2, and are electrically connected with the first type semiconductor layer 2；Second
Electrode 8, second electrode 8 are located on transparency conducting layer 5, and are electrically connected with transparency conducting layer 5；First electrode 7 and second electrode 8
It successively include the Cr layer being laminated and Al layers along the direction away from substrate 1.
Improving the chip structure that metal migrates in the present embodiment further includes：First antimigration electrode 9, the first antimigration electrode
9 are completely covered first electrode 7, and are electrically connected with the first type semiconductor layer 2；Second antimigration electrode 10, the second antimigration electricity
Second electrode 8 is completely covered in pole 10, and is electrically connected with the second type semiconductor layer 4.
It should be noted that the specific size of the first antimigration electrode 9 is not limited in the present embodiment, as long as the first antimigration
Electrode 9 can cover surface and all side wall of the first electrode 7 away from substrate 1, likewise, also unlimited in the present embodiment
The specific size of fixed second antimigration electrode 10, as long as the second antimigration electrode 10 can cover second electrode 8 away from substrate 1
Surface and all side walls.
Optional in the present embodiment, the size of the first antimigration electrode 9 is bigger than the size of first electrode 7, consequently facilitating complete
All standing first electrode 7；Size of the size of second antimigration electrode 10 also than second electrode 8 is big.
It should be noted that the specific of the first antimigration electrode 9 and the second antimigration electrode 10 is not limited in the present embodiment
The structure of structure, the first antimigration electrode 9 and the second antimigration electrode 10 can be identical or not identical, optionally, the two
It is made of multiple layer metal lamination.The metal material of lamination can be identical or not identical, does not limit in the present embodiment this
It is fixed.
In one embodiment of the utility model, the structure phase of the first antimigration electrode 9 and the second antimigration electrode 10
It together, and include at least one first metallic stacked structure, the metal material that first metallic stacked structure is included is identical.
In the present embodiment without limitation to the material of each layer metal layer in first metallic stacked structure, optionally, the first metal
Laminated construction successively includes the Ti layer being laminated and Pt layers along the direction away from the substrate.First antimigration electrode 9 and second is anti-
Migration electrode 10 can only include one layer of first metallic stacked structure, also may include the first metallic stacked structure of multilayer,
The present embodiment does not limit this.Shown in Figure 3, Fig. 3 is a kind of first antimigration provided by the embodiment of the utility model
Electrode structure schematic diagram, the first antimigration electrode structure include two layers of first metallic stacked structures 90, each the first gold medal of layer
Belonging to laminated construction 90 includes one layer of Ti layer 901 and one layer of Pt layer 902.In the utility model other embodiments, the first metal
Laminated construction can also be Ti layers, Pt layers and Au layers, no longer be described in detail in the present embodiment.
In addition, the specific structure of first electrode 7 and second electrode 8 is not limited in the present embodiment yet, both by multilayer gold
Belong to lamination composition, metal laminated specific metal material without limitation, is positive as shown in Figure 2 by LED chip in this present embodiment
LED chip is filled, first electrode 7 and second electrode 8 are reflecting electrode, and therefore, first electrode 7 and second electrode 8 are at least wrapped
Include the Al layer for deviating from 1 surface of substrate towards the Cr layer of substrate 1 and positioned at Cr layers, wherein Al layers primarily serve reflex, and Cr
Layer is mainly as contact layer and adhesion layer.
And it is located at other metal laminated materials on the Al layers of surface away from substrate 1, it is not limited this in the present embodiment；
It can be one of Ti layers, Pt layers, Au layers or a variety of, and every layer of metal layer can repeatedly occur, for example, first electrode
7 along the direction for deviating from substrate 1, successively includes：Cr layers, Al layers, Ti layers, Pt layers, Ti layers, Pt layers, Ti layers, Pt layers, Au layers.At this
It can also be other metal laminate structures in the other embodiments of utility model, do not limited this in the present embodiment.In addition, the
Two electrodes 8 are same along the direction for deviating from substrate 1, successively include：Cr layers, Al layers, Ti layers, Pt layers, Au layers, Ti layers, Pt layers, Au
Layer.
First electrode 7 and the structure of second electrode 8 can be identical or not identical in the present embodiment, right in the present embodiment
This is without limitation.Optionally, for convenience of the production of LED core plate electrode, the material and structure of first electrode 7 and second electrode 8 are equal
It is identical.First electrode 7 and second electrode 8 include at least one second metallic stacked structure, wherein the second metallic stacked structure
Positioned at the surface for deviating from substrate 1 away from described Al layers.The second metallic stacked structure edge deviates from the direction of the substrate successively
Ti layer including stacking and Pt layers.It can also include Au layers in the other embodiments of the utility model.Fig. 4 is referred to,
Fig. 4 is a kind of structural schematic diagram of first electrode 7 provided by the embodiment of the utility model；First electrode 7 is along the side for deviating from substrate
To successively including：Cr layer 701, Al layer 702 and the second metallic stacked structure 70 on Al layer 702, in the present embodiment
Two metallic stacked structures 70 successively include：Ti layer 703, Pt layer 704 and Au layer 705.It is folded that the second metal is not limited in the present embodiment
The quantity of layer structure, optionally, as shown in figure 4, the second metallic stacked structure 70 is 2 in the present embodiment, 2 the second metals are folded
Layer structure 70 is also layered on top of each other setting.
It should be noted that the first type semiconductor layer 2, active layer 3 and the formation of the second type semiconductor layer 4 in the present embodiment
The light emitting structure of LED chip does not limit the first type semiconductor layer 1, active layer 3 and the second type semiconductor layer 4 in the present embodiment
Specific material can be determined according to the luminescent color of LED chip structure, can also carry out different choosings according to practical application request
It selects, optional in the present embodiment, LED chip structure is galliumnitride base LED chip, and therefore, the first type semiconductor layer can be N-type
Semiconductor layer is more optionally n type gallium nitride layer；Accordingly, the second type semiconductor layer 4 is p type semiconductor layer, more may be used
It is selected as namely p-type gallium nitride layer；Alternatively, the first type semiconductor layer can be p type semiconductor layer, more optionally, nitrogenized for p-type
Gallium layer；Accordingly, the second type semiconductor layer 4 is n type semiconductor layer, is more chosen as namely n type gallium nitride layer.
In the chip structure for improving metal migration provided in the present embodiment, transparency conducting layer 5 plays current expansion work
With, the specific material of transparency conducting layer is not limited in the present embodiment, optionally, due to ITO (tin indium oxide) high transmittance and
Low-resistivity, to visible light transmittance up to 85% or more, low-resistivity (10-3 Ω cm~10-4 Ω cm), wider energy
Gap (Eg=3.6eV~3.9eV), infrared reflectivity be greater than 80%, rate of absorbing UV be greater than 85%, while also have high rigidity,
Characteristic wear-resisting, resistant to chemical etching and it is easy many advantages, such as being etched into the electrode pattern of certain shapes, uses ITO nesa coating
As the technology of current extending, chip cost can reduce.Optional in the present embodiment, the material of transparency conducting layer 5 is
ITO。
It should be noted that not limiting the specific material of passivation layer in the present embodiment, optionally, passivation layer 6 can be oxygen
Silicon nitride material.
Increase setting size in the utility model in the first electrode of LED chip in the prior art and is greater than first electrode
First antimigration electrode is increased the second antimigration electrode that setting size is greater than second electrode on the second electrode, is moved using anti-
Original electrode is completely covered in shift electrode, and is electrically connected with semiconductor layer, so that antimigration electrode is fully wrapped around firmly original
Electrode avoids the Cr layer in original first electrode and second electrode from exposing in air, so as to avoid display chip just
Occur the abnormal phenomenon of Cr metal migration during being often used, ensure that Cr layers of adhesive attraction, and then avoid LED chip knot
The problem of electrode delamination of structure.
Another embodiment of the utility model also provides a kind of light emitting diode (LED) display screen, as shown in figure 5, practical for this
A kind of light emitting diode (LED) display screen structural schematic diagram that new embodiment provides；Light emitting diode (LED) display screen includes display panel
11, it include the LED lamp bead 12 being arranged in array on display panel 11, wherein include LED chip, the LED in LED lamp bead 12
Chip is the chip structure of the migration of improvement metal described in above example.
Light-emitting diode screen provided by the utility model, due to using the chip structure of above-mentioned improvement metal migration,
Electrode compared with the existing technology in LED chip structure electrode, it is stronger, it is not easily to fall off, to ensure that light-emitting diodes
The display natural rate of interest of LED chip in tube display device, and then ensure that the display effect of light emitting display device.
The utility model other embodiment also provides a kind of light emitting display device, as shown in figure 4, including above
Light emitting diode (LED) display screen 13 and frame 14 as described in the examples, the frame 14 are used for encapsulating light emitting diode (OLED) display screen
13 form light emitting display device.
It include light emitting diode (LED) display screen recited above by the light emitting display device provided in this present embodiment,
And the LED lamp bead in the light emitting diode (LED) display screen is all made of the chip knot of the migration of improvement metal described in above example
Structure, due to the improvement metal migration chip structure electrode compared with the existing technology in LED chip structure electrode, more
Securely, not easily to fall off, to ensure that the display natural rate of interest of the LED chip in light emitting display device, and then ensure that
The display effect of light emitting display device.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
The foregoing description of the disclosed embodiments can be realized professional and technical personnel in the field or using originally practical new
Type.Various modifications to these embodiments will be readily apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the present invention will not be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest scope consistent with features of novelty.
Claims (11)
1. a kind of chip structure for improving metal migration, including：
Substrate；
Positioned at the substrate surface, and set gradually along the direction away from the substrate the first type semiconductor layer, active layer, the
Two type semiconductor layers；
Deviate from the transparency conducting layer of the substrate surface positioned at second type semiconductor layer；
Deviate from the passivation layer of the substrate surface positioned at the transparency conducting layer；
First electrode, the first electrode are located in first type semiconductor layer, and electrical with first type semiconductor layer
Connection；
Second electrode, the second electrode are located on the transparency conducting layer, and are electrically connected with the transparency conducting layer；
It is characterized in that, the first electrode and the second electrode successively include the Cr being laminated along the direction away from the substrate
Layer and Al layers；
Further include：
First antimigration electrode, the first electrode is completely covered in the first antimigration electrode, and partly leads with first type
Body layer is electrically connected；
Second antimigration electrode, the second antimigration electrode are completely covered the second electrode, and with the transparency conducting layer
It is electrically connected.
2. the chip structure according to claim 1 for improving metal migration, which is characterized in that
The material and structure of the first antimigration electrode and the second antimigration electrode are all the same.
3. the chip structure according to claim 2 for improving metal migration, which is characterized in that
The first antimigration electrode includes at least one first metallic stacked structure.
4. the chip structure according to claim 3 for improving metal migration, which is characterized in that
First metallic stacked structure is along the Ti layer that the direction away from the substrate successively includes stacking, Pt layers and Au layers.
5. the chip structure according to claim 1 for improving metal migration, which is characterized in that
The material and structure of the first electrode and the second electrode are all the same.
6. the chip structure according to claim 5 for improving metal migration, which is characterized in that
The first electrode includes at least one second metallic stacked structure, and second metallic stacked structure is located at described Al layers
Away from the surface of the substrate.
7. the chip structure according to claim 6 for improving metal migration, which is characterized in that
Second metallic stacked structure successively includes the Ti layer being laminated and Pt layers along the direction away from the substrate.
8. the chip structure of improvement metal migration described in -7 any one according to claim 1, which is characterized in that
First type semiconductor layer is n type semiconductor layer；Second type semiconductor layer is p type semiconductor layer.
9. the chip structure according to claim 8 for improving metal migration, which is characterized in that
The n type semiconductor layer is n type gallium nitride layer；The p type semiconductor layer is p-type gallium nitride layer.
10. a kind of light emitting diode (LED) display screen, which is characterized in that including improvement metal described in any one of claim 1-9
The chip structure of migration.
11. a kind of light emitting display device, which is characterized in that including diode displaying described in any one of claim 10
Screen.
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| CN201820695751.3U CN208127231U (en) | 2018-05-10 | 2018-05-10 | Improve chip structure, light emitting diode (LED) display screen and the display device of metal migration |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111312873A (en) * | 2020-03-18 | 2020-06-19 | 佛山市国星半导体技术有限公司 | LED chip for preventing aluminum electrode from migrating |
| WO2021029535A1 (en) * | 2019-08-13 | 2021-02-18 | Samsung Electronics Co., Ltd. | Micro led element and micro led display module having the same |
| CN112424960A (en) * | 2019-10-23 | 2021-02-26 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN117239030A (en) * | 2023-11-13 | 2023-12-15 | 江西兆驰半导体有限公司 | Electrode surface hydrophobic LED chip and preparation method thereof |
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2018
- 2018-05-10 CN CN201820695751.3U patent/CN208127231U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021029535A1 (en) * | 2019-08-13 | 2021-02-18 | Samsung Electronics Co., Ltd. | Micro led element and micro led display module having the same |
| CN112424960A (en) * | 2019-10-23 | 2021-02-26 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN112424960B (en) * | 2019-10-23 | 2023-03-10 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN111312873A (en) * | 2020-03-18 | 2020-06-19 | 佛山市国星半导体技术有限公司 | LED chip for preventing aluminum electrode from migrating |
| CN117239030A (en) * | 2023-11-13 | 2023-12-15 | 江西兆驰半导体有限公司 | Electrode surface hydrophobic LED chip and preparation method thereof |
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