CN105591003A - LED chip electrode and manufacture method thereof - Google Patents
LED chip electrode and manufacture method thereof Download PDFInfo
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- CN105591003A CN105591003A CN201610156747.5A CN201610156747A CN105591003A CN 105591003 A CN105591003 A CN 105591003A CN 201610156747 A CN201610156747 A CN 201610156747A CN 105591003 A CN105591003 A CN 105591003A
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- metal
- adhesion layer
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- led chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses an LED chip electrode and a manufacture method thereof. The electrode includes a first metal adhesion layer, a second metal adhesion layer arranged on the first metal adhesion layer, a metal protection layer arranged on the second metal adhesion layer, and a metal routing layer arranged on the metal protection layer. The material of the second metal adhesion layer is the metal Cr. The material of the metal protection layer is the metal Ti. The second metal adhesion layer and the metal protection layer fuse and form a Cr-Ti contact resistor. In the electrode the metal protection layer with material of Ti is formed, the second metal adhesion layer and the metal protection layer in the electrode fuse and form the Cr-Ti contact resistor. The horizontal expansion capacity of the LED chip is effectively improved, and the luminance of an LED chip is enhanced.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, relate in particular to a kind of LED chip electrode and manufacture method thereof.
Background technology
Light emitting diode (Light-EmittingDiode, LED) is the luminous semi-conductor electricity sub-element of a kind of energy. ThisElectronic component occurred as far back as 1962, can only send in early days the ruddiness of low-light level, developed afterwards other monochromatic versions, timeThe light that can send to today has spreaded all over visible ray, infrared ray and ultraviolet ray, and suitable brightness is also brought up in brightness. And purposes also byAt the beginning as indicator lamp, display board etc.; Along with the continuous progress of technology, light emitting diode be widely used in display,Decorate and illumination.
The preparation of LED chip generally includes following step:
1) by MOCVD at Grown on Sapphire Substrates multilayer GaN epitaxial layer;
2) the normal MESA of chip makes;
3) current barrier layer is made;
4) transparency conducting layer is made;
5) make SiO2Protective layer and metal electrode.
Wherein, metal electrode is generally sandwich construction, shown in Fig. 1, comprises metal adhesion layer 11 ', metallic reflector12 ' and metal routing layer 13 '. Wherein, metal adhesion layer 11 ' is Metal Cr etc., for by metal electrode and GaN epitaxial layerCarry out bondingly, and realize Ohmic contact; Metallic reflector 12 ' is metal A l etc., for luminous zone, reflective metals electrode belowLight, to improve the luminosity of LED chip; Metal routing layer 13 ' is metal A u etc., for by metal electrode and external devicesWeld by gold thread etc.
But the electric current ability extending transversely of LED chip of applying above-mentioned metal electrode structure is not good, to LED chipLuminosity can affect.
Summary of the invention
The object of the present invention is to provide a kind of LED chip electrode and manufacture method thereof, effectively improved sending out of LED chipBrightness.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows:
A kind of LED chip electrode, described electrode comprises the first metal adhesion layer, is located at the second metal on the first metal adhesion layerAdhesion layer, be located at the coat of metal on the second metal adhesion layer and be located at the metal routing layer on coat of metal, described inThe material of the second metal adhesion layer is Metal Cr, and the material of coat of metal is metal Ti, and the second metal adhesion layer and metal are protectedSheath fusion forms Cr-Ti contact resistance.
As a further improvement on the present invention, the thickness of described the second metal adhesion layer is 50-500, coat of metalThickness is 1000-3000.
As a further improvement on the present invention, the material of described the first metal adhesion layer is Cr or Ni, and thickness is 5-150?。
As a further improvement on the present invention, the material of described routing layer is Au or Al, and thickness is 10000-20000.
As a further improvement on the present invention, between described the first adhesion layer and the second metal adhesion layer, be also provided with metal anti-Penetrate layer.
As a further improvement on the present invention, the material of described metallic reflector is Al, and thickness is 1000-3000.
Correspondingly, a kind of manufacture method of LED chip electrode, described manufacture method comprises:
Adopt physical vaporous deposition to deposit successively the first metal adhesion layer, the second metal adhesion layer, coat of metal, Yi JijinBelong to routing layer, wherein, the second metal adhesion layer and coat of metal adopt respectively Cr target and Cr target to deposit;
The first metal adhesion layer, the second metal adhesion layer, coat of metal and metal routing layer are carried out to fusion process, makeThe second metal adhesion layer and coat of metal form Cr-Ti contact resistance.
As a further improvement on the present invention, described fusion process is specially:
At 200-250 DEG C of temperature, in nitrogen environment, fusion 5-30 minute.
As a further improvement on the present invention, the thickness of described the second metal adhesion layer is 50-500, coat of metalThickness is 1000-3000.
As a further improvement on the present invention, described method also comprises:
Plated metal reflecting layer on the first metal adhesion layer.
The invention has the beneficial effects as follows:
In electrode, form the coat of metal that material is Ti, the second metal adhesion layer and coat of metal in electrode can meltClose and form Cr-Ti contact resistance, effectively improved the ability extending transversely of LED chip, improved the luminosity of LED chip;
Ti coat of metal is not affecting under the prerequisite of ageing of electrode, greatly reduces the manufacturing cost of electrode.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existingHave the accompanying drawing of required use in technical description to be briefly described, apparently, the accompanying drawing in the following describes is only thisSome embodiment that record in invention, for those of ordinary skill in the art, are not paying under the prerequisite of creative work,Can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of LED chip electrode in prior art;
Fig. 2 is the structural representation of LED chip electrode in comparative example 1 of the present invention;
Fig. 3 is the structural representation of LED chip electrode in the embodiment of the present invention 1.
Detailed description of the invention
In order to make those skilled in the art person understand better the technical scheme in the present invention, real below in conjunction with the present inventionExecute the accompanying drawing in example, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described enforcementExample is only the present invention's part embodiment, instead of whole embodiment. Based on the embodiment in the present invention, this area is commonTechnical staff is not making the every other embodiment obtaining under creative work prerequisite, all should belong to the present invention's protectionScope.
Comparative example 1:
Shown in ginseng Fig. 2, in a comparative example of the present invention, LED chip electrode upwards comprises successively from semiconductor epitaxial layers:
The first metal adhesion layer 21, for adhering to semiconductor epitaxial layers, and forms Ohmic contact, and its material is Cr, and thickness is5-150?；
Metallic reflector 22, for the light of luminous zone, reflecting electrode below, to improve the luminosity of LED chip, its materialFor Al, thickness is 1000-3000;
The second metal adhesion layer 23, for adhesiving metal reflecting layer 22 and coat of metal 24, its material is Cr, thickness is 50-500?；
Coat of metal 24, for the protection of metallic reflector 22 and the second metal adhesion layer 23 of below, its material is Pt, thicknessFor 1000-3000;
Metal routing layer 25, for electrode and external devices are welded by gold thread etc., its material is Au, thickness is10000-20000?。
In this comparative example, LED chip electrode, can be to the light of luminous zone, electrode below by having added metallic reflectorReflect, and then improved the luminosity of LED chip.
Embodiment 1:
Shown in ginseng Fig. 3, in a specific embodiment of the present invention, LED chip electrode upwards comprises successively from semiconductor epitaxial layers:
The first metal adhesion layer 31, for adhering to semiconductor epitaxial layers, and forms Ohmic contact, and its material is Cr, and thickness is5-150?；
Metallic reflector 32, for the light of luminous zone, reflecting electrode below, to improve the luminosity of LED chip, its materialFor Al, thickness is 1000-3000;
The second metal adhesion layer 33, for adhesiving metal reflecting layer 32 and coat of metal 34, its material is Cr, thickness is 50-500?；
Coat of metal 34, for the protection of metallic reflector 32 and the second metal adhesion layer 33 of below, its material is Ti, thicknessFor 1000-3000;
Metal routing layer 35, for electrode and external devices are welded by gold thread etc., its material is Au, thickness is10000-20000?。
Compared with comparative example 1, in the present embodiment, the Pt metal of coat of metal is replaced by Ti, the second metal adhesion layer 33Can fuse and form Cr-Ti contact resistance with coat of metal 34, and then can improve the electric current ability extending transversely of LED chip.
In the present embodiment, the preparation method of LED chip electrode is specific as follows:
1, adopt physical vaporous deposition (PVD, PhysicalVaporDeposition) to deposit successively the first metal adhesion layer31, metallic reflector 32, the second metal adhesion layer 33, coat of metal 34 and metal routing layer 35, wherein, specifically comprises:
1) first utilize Cr target, deposition the first metal adhesion layer 31, deposit thickness is 5-150;
2) then utilize Al target, plated metal reflecting layer 32, deposit thickness is 1000-3000;
3) recycling Cr target, deposition the second metal adhesion layer 33, deposit thickness is 50-500;
4) then utilize Ti target, plated metal protective layer 34, deposit thickness is 1000-3000;
5) finally utilize Au target, plated metal routing layer 35, deposit thickness is 10000-20000.
2, to post-depositional the first metal adhesion layer 31, metallic reflector 32, the second metal adhesion layer 33, coat of metal34 and metal routing layer 35 carry out fusion process, make the second metal adhesion layer 33 form Cr-Ti with coat of metal 34 and contactResistance, concrete fusion process is:
By post-depositional composite construction, at 200-250 DEG C of temperature, in nitrogen environment, fusion 5-30 minute, makes the second metal stickyAttached layer 33 and coat of metal 34 fusions form Cr-Ti contact resistance.
LED chip to electrode in application comparative example 1 and embodiment 1 is tested, and the size of LED chip is 15*30mil, measuring current is 150mA, can obtain the test data in table 1.
Can find, compared with comparative example 1, the 0.02V that risen of the operating voltage Vf1 in embodiment 1, LED core under identical wavelengthThe brightness LOP1 of sheet has promoted 2.8%.
The light efficiency of LED chip utilizes LOP/(Vf1*I) be described, because of the measuring current phase in comparative example 1 and embodiment 1Deng, describe therefore can utilize LOP/Vf1 to carry out equivalence to the light efficiency of LED chip. Shown in ginseng table 1, the light of LED chip in embodiment 1Effect 53.70 is higher than the light efficiency 52.56 in comparative example 1, and light efficiency rises comparatively obvious.
Should be understood that, in the present embodiment, describe as an example of the electrode of five-layer structure (Cr-Al-Cr-Ti-Au) example,In other embodiments, the first metal adhesion layer also can adopt other metal materials such as Ni, and metal routing layer also can adoptOther metal materials such as Al, only need to ensure that the second metal adhesion layer and coat of metal fusion form Cr-Ti contact resistance.
Electrode in the present invention can be used as the N electrode of LED chip, also can be used as the P electrode of LED chip. Above-mentioned realityExecute in example LED chip electrode to comprise metallic reflector and describe as example, as be positioned at the P electrode of top, luminous zone, at itIn he embodiment, as be positioned at the N electrode outside luminous zone, also can metallic reflector be set, now, can be by the first metal adhesionLayer and the second metal adhesion layer adopt layer of metal adhesion layer (Cr) to replace, and can in electrode, form equally Cr-Ti contactResistance.
As can be seen from the above technical solutions, the present invention has following beneficial effect:
In electrode, form the coat of metal that material is Ti, the second metal adhesion layer and coat of metal in electrode can meltClose and form Cr-Ti contact resistance, effectively improved the ability extending transversely of LED chip, improved the luminosity of LED chip;
Ti coat of metal is not affecting under the prerequisite of ageing of electrode, greatly reduces the manufacturing cost of electrode.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, Er QieDo not deviate from the situation of spirit of the present invention or essential characteristic, can realize the present invention with other concrete form. Therefore, no matterFrom which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is by appended powerProfit requires instead of above-mentioned explanation limits, and is therefore intended to drop on all in the implication that is equal to important document of claim and scopeChange and include in the present invention. Any Reference numeral in claim should be considered as limiting related claim.
In addition although should be appreciated that this description is described according to embodiment, be not that each embodiment only wraps,Contain an independently technical scheme, this narrating mode of description is only that for clarity sake those skilled in the art shouldDescription is done as a whole, the technical scheme in each embodiment also can be through appropriately combined, forms those skilled in the artUnderstandable other embodiments.
Claims (10)
1. a LED chip electrode, is characterized in that, described electrode comprises the first metal adhesion layer, is located at the first metal adhesionThe second metal adhesion layer on layer, be located at the coat of metal on the second metal adhesion layer and be located on coat of metalMetal routing layer, the material of described the second metal adhesion layer is Metal Cr, the material of coat of metal is metal Ti, the second metalAdhesion layer and coat of metal fusion form Cr-Ti contact resistance.
2. LED chip electrode according to claim 1, is characterized in that, the thickness of described the second metal adhesion layer is 50-500, the thickness of coat of metal is 1000-3000.
3. LED chip electrode according to claim 1, is characterized in that, the material of described the first metal adhesion layer is CrOr Ni, thickness is 5-150.
4. LED chip electrode according to claim 1, is characterized in that, the material of described routing layer is Au or Al, thicknessFor 10000-20000.
5. LED chip electrode according to claim 1, is characterized in that, described the first adhesion layer and the second metal adhesionBetween layer, be also provided with metallic reflector.
6. LED chip electrode according to claim 5, is characterized in that, the material of described metallic reflector is Al, thicknessFor 1000-3000.
7. a manufacture method for LED chip electrode, is characterized in that, described manufacture method comprises:
Adopt physical vaporous deposition to deposit successively the first metal adhesion layer, the second metal adhesion layer, coat of metal, Yi JijinBelong to routing layer, wherein, the second metal adhesion layer and coat of metal adopt respectively Cr target and Cr target to deposit;
The first metal adhesion layer, the second metal adhesion layer, coat of metal and metal routing layer are carried out to fusion process, makeThe second metal adhesion layer and coat of metal form Cr-Ti contact resistance.
8. manufacture method according to claim 7, is characterized in that, described fusion process is specially:
At 200-250 DEG C of temperature, in nitrogen environment, fusion 5-30 minute.
9. manufacture method according to claim 8, is characterized in that, the thickness of described the second metal adhesion layer is 50-500, the thickness of coat of metal is 1000-3000.
10. manufacture method according to claim 7, is characterized in that, described method also comprises:
Plated metal reflecting layer on the first metal adhesion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610156747.5A CN105591003A (en) | 2016-03-18 | 2016-03-18 | LED chip electrode and manufacture method thereof |
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| CN201610156747.5A CN105591003A (en) | 2016-03-18 | 2016-03-18 | LED chip electrode and manufacture method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098894A (en) * | 2016-06-23 | 2016-11-09 | 华灿光电(苏州）有限公司 | A kind of light emitting diode and preparation method thereof |
| CN107994046A (en) * | 2017-11-23 | 2018-05-04 | 华灿光电（浙江）有限公司 | A kind of LED chip array, display panel and preparation method thereof |
| CN108110115A (en) * | 2017-10-20 | 2018-06-01 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108172669A (en) * | 2018-02-06 | 2018-06-15 | 佛山市国星半导体技术有限公司 | A kind of aluminium electrode LED chip and preparation method thereof |
| CN109326700A (en) * | 2017-07-31 | 2019-02-12 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base LED electrode structure and preparation method thereof |
| CN109742208A (en) * | 2018-12-13 | 2019-05-10 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED component and preparation method thereof |
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| JP2005026389A (en) * | 2003-07-01 | 2005-01-27 | Sharp Corp | Electrode structure on p-type iii-group nitride semiconductor layer and method of forming the same |
| CN103426990A (en) * | 2012-05-17 | 2013-12-04 | 晶元光电股份有限公司 | Light emitting device with reflective electrode |
| US20150188011A1 (en) * | 2013-12-30 | 2015-07-02 | Iljin Led Co., Ltd. | Side-emitting type nitride semiconductor light emitting chip and nitride semiconductor light emitting device having the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005026389A (en) * | 2003-07-01 | 2005-01-27 | Sharp Corp | Electrode structure on p-type iii-group nitride semiconductor layer and method of forming the same |
| CN103426990A (en) * | 2012-05-17 | 2013-12-04 | 晶元光电股份有限公司 | Light emitting device with reflective electrode |
| US20150188011A1 (en) * | 2013-12-30 | 2015-07-02 | Iljin Led Co., Ltd. | Side-emitting type nitride semiconductor light emitting chip and nitride semiconductor light emitting device having the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098894A (en) * | 2016-06-23 | 2016-11-09 | 华灿光电(苏州）有限公司 | A kind of light emitting diode and preparation method thereof |
| CN109326700A (en) * | 2017-07-31 | 2019-02-12 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base LED electrode structure and preparation method thereof |
| CN108110115A (en) * | 2017-10-20 | 2018-06-01 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN107994046A (en) * | 2017-11-23 | 2018-05-04 | 华灿光电（浙江）有限公司 | A kind of LED chip array, display panel and preparation method thereof |
| CN108172669A (en) * | 2018-02-06 | 2018-06-15 | 佛山市国星半导体技术有限公司 | A kind of aluminium electrode LED chip and preparation method thereof |
| CN109742208A (en) * | 2018-12-13 | 2019-05-10 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED component and preparation method thereof |
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Application publication date: 20160518 |
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