CN109326700A - A kind of GaN base LED electrode structure and preparation method thereof - Google Patents
A kind of GaN base LED electrode structure and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
A kind of GaN base LED electrode structure and preparation method thereof, is to be provided with P electrode on ITO current extending, is provided with N electrode on the table top of n-type GaN layer；The structure of P electrode and N electrode be from bottom to top successively include the first Cr layers, the first Al layers, Ti layers, Au layers, the 2nd Cr layers and the 2nd Al layers；Its production method is the following steps are included: (1) makes ito thin film layer, etching n-type GaN layer table top；(2) photoetching electrode pattern is made, to form clad type electrode structure；(3) electrode structure is made.The present invention passes through the control to suitable photoetching offset plate figure chamfering; to realize clad type electrode structure; through reasonable electrode structural designs while guaranteeing electrode good adhesion; tube core luminous efficiency is set to be improved significantly; and entire electrode structural designs are simple, and all using conventional evaporation material, the entire manufacturing process time is shorter; consumed cost is lower, and the scale suitable for all GaN base LED dies makes.
Description
Technical field
The present invention relates to a kind of GaN base LED die and its specific production method with high reflectance electrode structure, belong to
Semiconductor processing technology field.
Background technique
LED (Light Emitting Diode) is that a kind of save by semiconductor P-N carries out electroluminescent device, by
The compound of nitrogen, arsenic, gallium, phosphorus etc. is made, and can convert electrical energy into luminous energy, is sent out by electronics and the recombination radiation in hole
Light.Its basic structure is one block of electroluminescent semiconductor material, is a kind of solid state semiconductor devices, it can direct handle
Electrotransformation is light, and LED, which is placed in one, to be had on the shelf of lead, is then sealed, is conducive to using epoxy resin in surrounding
Play the role of protecting internal core, therefore the anti-seismic performance of LED is very good.Meanwhile LED is widely recognized as forth generation illumination
Light source or green light source, because there are the various characteristics such as environmentally friendly, energy saving, the service life is long, small in size, stability is good, in various back
Light source, general lighting, decoration, display have indicated etc. that fields application is especially extensive, and in recent years, the research and development and development of LED obtain
Country vigorously supports, and with the development of LED technology, LED lamp is universally accepted in domestic lighting field, obtains unprecedented scale
Development and progress.
The nuclear structure that LED electrode structure is designed as entire LED die is the key point for determining entire LED technology.
By the design of electrode film layer appropriate and structure, can be imitated with quantum outside effective solution current expansion, the heat dissipation of chip, tube core
The technical problem of rate, stability etc..At present traditional electrode structure using Cr/Au structure or Ni/Au structure or
Person Cr/Ti/Au structure, this kind of electrode structural designs largely consider the stability and ohmic contact layer of electrode structure
In formation, but luminous efficiency is lower.
Chinese patent literature CN104362239A discloses a kind of LED electrode structure and preparation method thereof, including five tunics
Layer: the first Ni layer, Al layer, Cr layers, the 2nd Ni layers and Au layers, and through-hole is provided on Ni layers the first, Al layers of conduct are electric
Pole reflecting layer uses, and Cr layers are used as transition zone, had both provided good adhesive attraction, and had also played Al, Au atom phase counterdiffusion
Effect.Wherein, the design of through-hole not only reduces the first Ni layers of absorption to light, at the same guaranteed reflecting layer and GaN it
Between good contact, maximumlly improve light extraction efficiency.But electrode film layer is made by electron beam steaming in the invention
What plating was completed, after Ni layers of vapor deposition are completed under the conditions of condition of high vacuum degree, it is necessary to chip be taken out, the production of through-hole is completed outside chamber
Then chip is placed back into high vacuum chamber again and continues to evaporate operation by process.The operating process easily causes electrode surface
First Ni layers of oxidation, whether by dry etching or wet corrosion technique, as long as the first Ni layer leave vacuum chamber and sky
Gas contact surface can form one layer of sull faster, and when continuing evaporating Al, contact layer firmness formed therewith is difficult
Guarantee.
" the LED core plate electrode knot that transverse current spreads and possesses bireflectance surface can be promoted disclosed in CN105552191A
Structure ", the Cr layer that is mainly arranged by clad type, the first Al layers, at least TiN/Pt layers of a pair of, Au layers, outside the 2nd Al layers and TiN
The trapezium structure of layer composition extends item.The extending transversely of electric current can be effectively increased by this kind of electrode structure, and reaches light
Multi-panel reflection effect.But the specific forming method of concrete implementation clad type electrode is not referred in this configuration, and
And up to 9 layers of electrode structure film layer form a film under conditions of form high vacuum in vaporization chamber, it is time-consuming more long, production efficiency compared with
It is low, while design of the TiN/Pt as current barrier layer and conductive layer, make the higher cost of entire electrode structure, TiN with Al layers
Between adhesiveness it is less desirable, there are certain difficult bonding wire ratios when beating electrode.
It cannot be united for existing GaN base LED electrode structure production efficiency, cost of manufacture and luminous efficiency as a result,
Under the premise of one solves, it is necessary to it is moderate, high-efficient to study a kind of cost of manufacture, electrode reflectance can be obviously improved and
The LED electrode structure and its specific production method of stable structure.
Summary of the invention
For existing GaN base LED electrode structure production efficiency, cost of manufacture and in terms of existing for
Deficiency, the present invention provide a kind of high-efficient, and electrode reflectance can be obviously improved and the GaN base LED electrode of stable structure
Structure, while a kind of production method of structure being provided.
GaN base LED electrode structure of the invention, using following technical scheme:
The GaN base LED electrode structure successively includes substrate, n-type GaN layer, quantum well layer and p-type GaN layer, p from bottom to top
It is provided with ITO current extending in type GaN layer, table top is provided in n-type GaN layer, is provided with P electrode on ITO current extending,
N electrode is provided on the table top of n-type GaN layer；The structure of P electrode and N electrode be from bottom to top successively include the first Cr layers, first
Al layers, Ti layers, Au layers, the 2nd Cr layers and the 2nd Al layers.
Described first Cr layers, the first Al layers, Ti layers, Au layers, the 2nd Cr layers and the 2nd Al layers coat lower layer at the middle and upper levels.
Described first Cr layers and the 2nd Cr layers with a thickness of 5-30 angstroms.
Described first Al layers and the 2nd Al layers with a thickness of 500-1000 angstroms.
Described Ti layers with a thickness of 200-500 angstroms.
Described Au layers with a thickness of 3000-5000 angstroms.
The production method of above-mentioned GaN base LED electrode structure, comprising the following specific steps
(1) ITO (tin indium oxide) film layer is made in the p-type GaN layer of GaN base LED wafer, as ITO current expansion
Layer, the n-type GaN layer of GaN base LED wafer is etched into from ITO (tin indium oxide) film layer, forms table top in n-type GaN layer；
The square resistance of the ito thin film layer is lower than 30 ohm/mouthful, and transmitance is greater than 85%.
(2) photoetching electrode pattern is made, to form clad type electrode structure；The following steps are included:
1. gluing: using negative sense photoresist in wafer surface gluing, rubberization thickness is 10000 angstroms -35000 angstroms, and gluing turns
Speed is 1600rpm-3000rpm；Chip after gluing tentatively to be dried (front baking), temperature is controlled at 70 DEG C -120 DEG C, when
Between be 60-120 seconds；
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 5-25 seconds, exposure power 200-
Chip is carried out second of baking (middle baking) after the completion of exposure by 500w, and temperature is 70 DEG C -120 DEG C, and the time is 60-120 seconds；
3. development: the chip of step 2. will be completed and carry out development operation, developing time is 50-90 seconds, and developer temperatur is
50-70 DEG C, and constant temperature is kept, chip is subjected to third time baking (rear to dry) after the completion of development, temperature is 70 DEG C -120 DEG C, the time
It is 60-120 seconds.
Photoresist chamfering α is 60 ° -75 ° in the photoetching electrode pattern made in step (2).
The 2. further preferred time for exposure in step (2) is 10-15 seconds.
(3) P electrode and N electrode structure are made in ITO (tin indium oxide) film layer and n-type GaN layer table top；Including following
Step:
1. the chip for completing step (2) is placed on the electron beam evaporation platform chamber that vacuum degree is at least 9.0E-6Torr
It is interior；
2. Cr layers of vapor deposition the first: evaporation rate is 0.5-3 angstroms per second, 1-3 minutes cooling with a thickness of 5-30 angstroms；
3. Al layers of vapor deposition the first: evaporation rate is 5-10 angstroms per second, and thickness reaches 500-1000 angstroms, cooling 3-5 minutes；
4. Ti layers of vapor deposition: evaporation rate is 3-5 angstroms per second, with a thickness of 200-500 angstroms；
5. Au layers of vapor deposition: evaporation rate is 5-10 angstroms per second, 10 minutes cooling with a thickness of 3000-5000 angstroms；
6. Cr layers of vapor deposition the 2nd: evaporation rate is 0.5-3 angstroms per second, 1-3 minutes cooling with a thickness of 5-30 angstroms；
7. Al layers of vapor deposition the 2nd: evaporation rate is 5-10 angstroms per second, and thickness reaches 500-1000 angstroms, is cooled to room temperature.
The invention has the following advantages:
1. in photoetching electrode pattern manufacturing process, the study found that aobvious by appropriate gluing (front baking)-exposure (middle baking)-
The collocation of parameter, can produce photoetching offset plate figure of the chamfering between 60 ° -75 ° in shadow (rear to dry) step, and in this angle model
Enclose interior electrode pattern, can produce the suitable clad type electrode structure of angle, this electrode structure can to greatest extent into
Row side is reflective, reduces the absorption of light, ensure that light extraction efficiency.By the research of the invention finds that, chamfering deviate 60 ° it is more
When, electrode edge will appear more serious metal residual, form electrode black surround phenomenon, and top layer film layer is difficult to form cladding, only
Can form stacked structure, and be greater than 75 ° it is more when, electrode side angle of reflection is too small, and most of light are reflected back toward Quantum Well again
Layer, does not become effective light-emitting surface, light extraction efficiency is lower.The parameter collocation that middle step (2) provides through the invention can make
Make the preferable clad type electrode structure figure in edge.
2. the present invention has found after study, in the case where guaranteeing the Al layers of enough situation of reflecting mirror, with the increase of Cr thickness degree
The reflecting layer relative reflectance of Cr/Al film layer composition gradually decreases, and measures discovery using ultraviolet double beam spectrophotometer,
It is more than after 30 angstroms in Cr thickness degree, relative reflectance significantly quickly reduces, it cannot be guaranteed that the reflection of enough light, reflectance coating
Layer can lose effectiveness, and light extraction efficiency is lower.
Relative reflectance in the present invention refers to, has Cr layer in the growth of Al layer surface, the Cr/Al combination film layer of composition with it is complete
Reflection pure Al layer reflectivity ratio, progress spectrophotometer measurement when, two-beam respectively by Al layers and Cr/Al layers, and
Obtain relative reflection rate score.
3. in the present invention, the first Cr layers used as adhesion layer, can not only guarantee the stabilization of electrode, and can be realized Al
Good Ohmic contact between layer and GaN；2nd Cr layers, the effect for increasing the adherency of film layer up and down is not only acted as, and can
Prevent the phase counterdiffusion of Au and Al metallic atom.First and second Al layers uses as reflecting layer, the first Al layers mainly by Quantum Well
Layer reflects back to the light that electrode base issues and forms emergent light again, and the second aluminium layer mainly once sent out Quantum Well to electrode side
Light out reflects away, design with this configuration, can improve the light emission luminance of tube core by a relatively large margin.First Ti layers can have
Effect prevents the phase counterdiffusion of Au and Al metallic atom.The Au layers of main body as electrode structure, itself good extension and stability
It ensure that the stabilization of entire electrode structure.
4. electrode structure is simple in the present invention, all designed using common metal, whole process production is easy to operate, realizes letter
Just, processing time is shorter, greatly improves vapor deposition efficiency, and entire film layer design is rationally, less using Au raw material, greatly reduces
Production cost can obtain the tube core of higher brightness, be suitable for large scale quantities metaplasia and produce, be common to the system of all filming equipments
Make.
Detailed description of the invention
Fig. 1 is the sectional side elevation of GaN base LED electrode structure of the present invention.
Fig. 2 is the film layer schematic diagram of electrode structure in the present invention.
Photoresist chamfering pattern after Fig. 3 completes for photoetching electrode pattern in the present invention, α angle is between 60 ° -75 °.
Fig. 4 is trend chart of the relative index of refraction with Cr thickness degree.
Wherein: 1. Sapphire Substrates, 2.n type GaN layer, 3. quantum well layers, 4.p type GaN layer, 5.ITO current extending,
6.P electrode, 7.N electrode, 8. sapphire wafers, 9. negative sense photoresists.
Specific embodiment
The present invention is the preparation GaN base LED electrode structure on sapphire wafer 8 (referring to Fig. 3).As shown in Figure 1, sapphire
Chip 8 successively includes Sapphire Substrate 1, n-type GaN layer 2, quantum well layer 3 and p-type GaN layer 4 from bottom to top, is set in p-type GaN layer 4
It is equipped with ITO current extending 5, table top is provided in n-type GaN layer 2, P electrode 6, N-shaped GaN are provided on ITO current extending 5
N electrode 7 is provided on the table top of layer 2.The structure of P electrode 6 and N electrode 7 as shown in Fig. 2, successively include the first Cr from bottom to top
Layer, the first Al layers, Ti layers, Au layers, the 2nd Cr layers and the 2nd Al layers, the first Cr layers, the first Al layers, Ti layers, Au layers, the 2nd Cr layers
With the 2nd Al layers coat lower layer at the middle and upper levels.First Cr layers and the 2nd Cr layers with a thickness of 5-30 angstroms.First Al layers and the 2nd Al layers
With a thickness of 500-1000 angstroms.Ti layers with a thickness of 200-500 angstroms.Au layers with a thickness of 3000-5000 angstroms.
Below according to the content of present invention, to make 7*8mil2For size electrodes, with specific embodiment to the present invention into one
Step explanation, and pass through comparative illustration beneficial effect.
Embodiment 1
(1) using electron beam evaporation platform, that ITO is deposited in the p-type GaN layer 4 of sapphire wafer 8 (GaN base LED wafer) is thin
Film, ito thin film are made annealing treatment with a thickness of 600 angstroms, obtain square resistance lower than 30 ohm/mouthful, transmitance is greater than 85%
Ito thin film layer (i.e. ITO current extending 5).Mask graph is made by photoresist and obtains ITO pattern, and the area N is etched into n
Type GaN layer 2 forms table top in n-type GaN layer 2.
(2) photoetching electrode pattern is made, to form clad type electrode structure
1. gluing: carrying out glue application step, rubberization thickness 10000 in wafer surface using negative sense photoresist 9 (referring to Fig. 3)
Angstrom, gluing revolving speed is 1600rpm；The chip that gluing is completed is placed on hot plate (or other contact heating equipments) and is carried out just
Step drying (front baking), at 70 DEG C, the time is 60 seconds for thermostatic control.
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 10 seconds, exposure power 200w,
Operation is dried in carrying out after the completion of exposure, places the wafer on hot plate (or other contact heating equipments) and carries out secondary baking
(middle baking), temperature are 70 DEG C, and the time is 60 seconds.
3. developing, the chip of step 2. will be completed and carry out development operation, developing time is 50 seconds, developer temperatur 50
DEG C, and constant temperature is kept, and third time baking operation is carried out after the completion of development, and chip is subjected to third time baking, temperature is 70 DEG C, when
Between be 60 seconds.
Fig. 3 gives the photoresist chamfering pattern after photoetching electrode pattern completes in the present embodiment, α angle 60 °-
Between 75 °.
(3) structure of P electrode 6 and N electrode 7, P electrode and N electrode knot are made on ito thin film layer and n-type GaN layer table top
Structure is the same.
The production of electrode structure is carried out in the present invention using electron beam evaporation platform, various metal purities are not less than
99.99%.
1. high vacuum: the chip for completing step (2) is placed in electron beam evaporation platform chamber, vacuum pumping is carried out,
Vacuum degree in electron beam evaporation platform chamber is set to be at least 9.0E-6Torr (including)；
Electron beam evaporation platform Chamber vacuum value, which must reach 9.0E-6Torr or more, can carry out vapor deposition step.
2. Cr layers of vapor deposition the first: after chamber reaches vacuum values requirement, carrying out Cr layers of vapor deposition, be by film thickness gauge speed control
0.5 angstroms per second, thickness reach 5 angstroms, and electron gun scanning covers entire evaporation source；Cooling 1min.
3. Al layers of vapor deposition the first: being 5 angstroms per seconds by film thickness gauge speed control, thickness reaches 500 angstroms, and electron gun scans not
It opens, cooling 3min.
4. Ti layers of evaporation metal: electron gun scans not open, and rate is 3 angstroms per seconds, with a thickness of 200 angstroms；
5. Au layers of evaporation metal: being 5 angstroms per seconds by film thickness gauge speed control, thickness reaches 3000 angstroms, cooling 10min.
6. Cr layers of vapor deposition the 2nd: being 0.5 angstroms per second by film thickness gauge speed control, thickness reaches 5 angstroms, and electron gun scanning is covered
Cover entire evaporation source, cooling 1min.
7. Al layers of vapor deposition the 2nd: being 5 angstroms per seconds by film thickness gauge speed control, thickness reaches 500 angstroms, and electron gun scans not
It opens, is cooled to room temperature.
Embodiment 2
(1) with embodiment 1.
(2) photoetching electrode pattern is made.
1. gluing: carrying out glue application step in wafer surface using negative sense photoresist, rubberization thickness is 35000 angstroms, and gluing turns
Speed is 3000rpm；The chip that gluing is completed tentatively is dried, temperature controls between 120 DEG C, and the time is between 120 seconds.
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 25 seconds, exposure power 500w,
Chip is subjected to secondary baking after the completion of exposure, temperature is 120 DEG C, and the time is 120 seconds.
3. developing, the chip of step 2. will be completed and carry out development operation, developing time is 90 seconds, developer temperatur 70
DEG C, and constant temperature is kept, chip is subjected to third time baking after the completion of development, temperature is 120 DEG C, and the time is 120 seconds.
(3) electrode structure is made
1. with embodiment 1；
2. Cr layers of vapor deposition the first: after chamber reaches vacuum values requirement, carrying out Cr layers of vapor deposition, be by film thickness gauge speed control
3 angstroms per seconds, thickness reach 30 angstroms, and electron gun scanning covers entire evaporation source；Cooling 3min.
3. Al layers of vapor deposition the first: being 10 angstroms per seconds by film thickness gauge speed control, thickness reaches 1000 angstroms, electron gun scanning
It does not open, cooling 5min.
4. Ti layers of evaporation metal: electron gun scans not open, and rate is 5 angstroms per seconds, with a thickness of 500 angstroms；
5. Au layers of evaporation metal: being 10 angstroms per seconds by film thickness gauge speed control, thickness reaches 5000 angstroms, cooling 10min.
6. Cr layers of vapor deposition the 2nd: being 3 angstroms per seconds by film thickness gauge speed control, thickness reaches 30 angstroms, electron gun scanning covering
Entire evaporation source, cooling 3min.
7. Al layers of vapor deposition the 2nd: being 10 angstroms per seconds by film thickness gauge speed control, thickness reaches 1000 angstroms, electron gun scanning
It does not open, is cooled to room temperature.
Embodiment 3
First Cr layers and two Cr thickness degree are increased to 200 angstroms.
(1) with embodiment 1.
(2) photoetching electrode pattern is made
1. gluing: carrying out glue application step in wafer surface using negative sense photoresist, rubberization thickness is 20000 angstroms, and gluing turns
Speed is 2000rpm；The chip that gluing is completed tentatively is dried, 100 DEG C of temperature, the time is 100 seconds.
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 15 seconds, exposure power 400w,
Chip is subjected to secondary baking after the completion of exposure, temperature is 100 DEG C, and the time is 100 seconds.
3. developing, the chip of step 2. will be completed and carry out development operation, developing time is 70 seconds, developer temperatur 60
DEG C, and constant temperature is kept, chip is subjected to third time baking after the completion of development, temperature is 120 DEG C, and the time is 120 seconds.
(3) electrode structure is made
1. with embodiment 1.
2. Cr layers of vapor deposition the first: after chamber reaches vacuum values requirement, carrying out Cr layers of vapor deposition, be by film thickness gauge speed control
2 angstroms per seconds, thickness reach 200 angstroms, and electron gun scanning covers entire evaporation source；Cooling 2min.
3. Al layers of vapor deposition the first: being 8 angstroms per seconds by film thickness gauge speed control, thickness reaches 800 angstroms, and electron gun scans not
It opens, cooling 4min.
4. Ti layers of evaporation metal: electron gun scans not open, and rate is 4 angstroms per seconds, with a thickness of 300 angstroms；
5. Au layers of evaporation metal: being 8 angstroms per seconds by film thickness gauge speed control, thickness reaches 4000 angstroms, cooling 10min.
6. Cr layers of vapor deposition the 2nd: being 2 angstroms per seconds by film thickness gauge speed control, thickness reaches 200 angstroms, and electron gun scanning is covered
Cover entire evaporation source, cooling 2min.
7. Al layers of vapor deposition the 2nd: being 8 angstroms per seconds by film thickness gauge speed control, thickness reaches 800 angstroms, and electron gun scans not
It opens, is cooled to room temperature.
Embodiment 4
α angle is increased and (is greater than 75 °) by the temperature and time for changing baking.
(1) with embodiment 1.
(2) photoetching electrode pattern is made
1. gluing: carrying out glue application step in wafer surface using negative sense photoresist, rubberization thickness is 15000 angstroms, and gluing turns
Speed is 2500rpm；Chip after the completion of gluing is tentatively dried, 130 DEG C of temperature, the time is 180 seconds.
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 5 seconds, exposure power 300w, is exposed
Chip is subjected to secondary baking after the completion of light, temperature is 130 DEG C, and the time is 180 seconds.
3. developing, the chip of step 2. will be completed and carry out development operation, developing time is 60 seconds, developer temperatur 55
DEG C, and constant temperature is kept, chip is subjected to third time baking after the completion of development, temperature is 130 DEG C, and the time is 180 seconds.
(3) electrode structure is made
1. with embodiment 1.
2. Cr layers of vapor deposition the first: after chamber reaches vacuum values requirement, carrying out Cr layers of vapor deposition, be by film thickness gauge speed control
1.5 angstroms per seconds, thickness reach 15 angstroms, and electron gun scanning covers entire evaporation source；Cooling 1.5min.
3. Al layers of vapor deposition the first: being 6 angstroms per seconds by film thickness gauge speed control, thickness reaches 700 angstroms, and electron gun scans not
It opens, cooling 4min.
4. Ti layers of evaporation metal: electron gun scans not open, and rate is 3.5 angstroms per seconds, with a thickness of 380 angstroms；
5. Au layers of evaporation metal: being 7 angstroms per seconds by film thickness gauge speed control, thickness reaches 3600 angstroms, cooling 10min.
6. Cr layers of vapor deposition the 2nd: being 1.5 angstroms per seconds by film thickness gauge speed control, thickness reaches 15 angstroms, and electron gun scanning is covered
Cover entire evaporation source, cooling 1.5min.
7. Al layers of vapor deposition the 2nd: being 6 angstroms per seconds by film thickness gauge speed control, thickness reaches 700 angstroms, and electron gun scans not
It opens, is cooled to room temperature.
Embodiment 5
The present embodiment uses tradition Cr/Ti/Au electrode structure.
(1) with embodiment 1.
(2) photoetching electrode pattern is made
1. gluing: carrying out glue application step in wafer surface using negative sense photoresist, rubberization thickness is 25000 angstroms, and gluing turns
Speed is 2000rpm；The chip that gluing is completed tentatively is dried, at 90 DEG C, the time is 90 seconds for thermostatic control.
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 10 seconds, exposure power 400w,
Chip is subjected to secondary baking after the completion of exposure, temperature is 90 DEG C, and the time is 90 seconds.
3. developing, the chip of step 2. will be completed and carry out development operation, developing time is 80 seconds, developer temperatur 65
DEG C, and constant temperature is kept, chip is subjected to third time baking after the completion of development, temperature is 90 DEG C, and the time is 90 seconds.
(3) electrode structure is made
1. with embodiment 1.
2. evaporation metal Cr: after chamber reaches vacuum values requirement, carrying out Cr layers of vapor deposition, be 5 by film thickness gauge speed control
Angstroms per second, thickness reach 200 angstroms, and electron gun scanning covers entire evaporation source；Cooling 1min.
3. evaporation metal Ti: electron gun scans not open, and rate is 3 angstroms per seconds, with a thickness of 200 angstroms；
4. evaporation metal Au: being 5 angstroms per seconds by film thickness gauge speed control, thickness reaches 15000 angstroms, is cooled to room temperature.
The electrode that above-mentioned each embodiment is obtained carries out bonding wire and push-pull effort test verifying, and it is bright to carry out packaging and testing
Degree, it is as shown in Table 1 below to obtain result:
Pass through above-mentioned 1 parameter ratio of table, it is known that Cr thickness spends that thick, electrode pattern chamfering is improper, electrode structure is all to electricity
The bonding wire of pole and brightness are affected, production method through the invention, can obtain that bonding wire yield is higher and brightness is biggish
Tube core.
Claims (10)
1. a kind of GaN base LED electrode structure successively includes substrate, n-type GaN layer, quantum well layer and p-type GaN layer, p from bottom to top
It is provided with ITO current extending in type GaN layer, table top is provided in n-type GaN layer, is provided with P electrode on ITO current extending,
N electrode is provided on the table top of n-type GaN layer；It is characterized in that: the structure of P electrode and N electrode is from bottom to top successively to include first
Cr layers, the first Al layers, Ti layers, Au layers, the 2nd Cr layers and the 2nd Al layers.
2. GaN base LED electrode structure according to claim 1, it is characterized in that: the described first Cr layers, the first Al layers, Ti
Layer, Au layers, the 2nd Cr layers and the 2nd Al layers coat lower layer at the middle and upper levels.
3. GaN base LED electrode structure according to claim 1, it is characterized in that: the described first Cr layers and the 2nd Cr layers of thickness
Degree is 5-30 angstroms.
4. GaN base LED electrode structure according to claim 1, it is characterized in that: the described first Al layers and the 2nd Al layers of thickness
Degree is 500-1000 angstroms.
5. GaN base LED electrode structure according to claim 1, it is characterized in that: described Ti layers with a thickness of 200-500 angstroms.
6. GaN base LED electrode structure according to claim 1, it is characterized in that: described Au layers with a thickness of 3000-5000
Angstrom.
7. GaN base LED electrode construction manufacturing method described in a kind of claim 1, characterized in that the following steps are included:
(1) ito thin film layer is made in the p-type GaN layer 4 of GaN base LED wafer, as ITO current extending, from ito thin film layer
The n-type GaN layer for etching into GaN base LED wafer, forms table top in n-type GaN layer；
(2) photoetching electrode pattern is made, comprising the following steps:
1. gluing: using negative sense photoresist in wafer surface gluing, rubberization thickness is 10000 angstroms -35000 angstroms, and gluing revolving speed is
1600rpm-3000rpm；Chip after gluing is tentatively dried, temperature control is at 70 DEG C -120 DEG C, time 60-120
Second；
2. exposure: the chip of step 1. will be completed and be exposed operation, the time for exposure is 5-25 seconds, exposure power 200-
Chip is carried out second after the completion of exposure and toasted by 500w, and temperature is 70 DEG C -120 DEG C, and the time is 60-120 seconds；
3. development: the chip of step 2. will be completed and carry out development operation, developing time is 50-90 seconds, developer temperatur 50-70
DEG C, and constant temperature is kept, chip is subjected to third time baking (rear to dry) after the completion of development, temperature is 70 DEG C -120 DEG C, time 60-
120 seconds；
(3) electrode structure is made, comprising the following steps:
1. the chip for completing step (2) is placed on vacuum degree to be at least in the electron beam evaporation platform chamber of 9.0E-6Torr；
2. Cr layers of vapor deposition the first: evaporation rate is 0.5-3 angstroms per second, 1-3 minutes cooling with a thickness of 5-30 angstroms；
3. Al layers of vapor deposition the first: evaporation rate is 5-10 angstroms per second, and thickness reaches 500-1000 angstroms, cooling 3-5 minutes；
4. Ti layers of vapor deposition: evaporation rate is 3-5 angstroms per second, with a thickness of 200-500 angstroms；
5. Au layers of vapor deposition: evaporation rate is 5-10 angstroms per second, 10 minutes cooling with a thickness of 3000-5000 angstroms；
6. Cr layers of vapor deposition the 2nd: evaporation rate is 0.5-3 angstroms per second, 1-3 minutes cooling with a thickness of 5-30 angstroms；
7. Al layers of vapor deposition the 2nd: evaporation rate is 5-10 angstroms per second, and thickness reaches 500-1000 angstroms, is cooled to room temperature.
8. GaN base LED electrode construction manufacturing method according to claim 7, characterized in that ITO is thin in the step (1)
The square resistance of film layer is lower than 30 ohm/mouthful, and transmitance is greater than 85%.
9. GaN base LED electrode construction manufacturing method according to claim 7, characterized in that production in the step (2)
Photoetching electrode pattern in photoresist chamfering α be 60 ° -75 °.
10. GaN base LED electrode construction manufacturing method according to claim 7, characterized in that the step (2) 2. in
Time for exposure is 10-15 seconds.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111697046A (en) * | 2020-07-29 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of display panel with OLED and LED hybrid structure and display panel |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06188450A (en) * | 1992-12-16 | 1994-07-08 | Sharp Corp | Light emitting diode |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
| CN102217104A (en) * | 2008-06-16 | 2011-10-12 | Lg伊诺特有限公司 | Kim geun ho [kr]; kim sung kyoon [kr]; choi hee seok |
| KR20130096209A (en) * | 2013-07-25 | 2013-08-29 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN103426990A (en) * | 2012-05-17 | 2013-12-04 | 晶元光电股份有限公司 | Light emitting device with reflective electrode |
| CN103828073A (en) * | 2011-09-16 | 2014-05-28 | 首尔伟傲世有限公司 | Light emitting diode and method of manufacturing same |
| CN104285306A (en) * | 2012-05-08 | 2015-01-14 | 克里公司 | Light emitting diode (led) contact structures and process for fabricating the same |
| CN105552191A (en) * | 2016-02-02 | 2016-05-04 | 厦门乾照光电股份有限公司 | Light emitting diode (LED) chip electrode structure capable of promoting transverse current diffusion and with dual reflection surfaces |
| CN105591003A (en) * | 2016-03-18 | 2016-05-18 | 聚灿光电科技股份有限公司 | LED chip electrode and manufacture method thereof |
-
2017
- 2017-07-31 CN CN201710644313.4A patent/CN109326700B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06188450A (en) * | 1992-12-16 | 1994-07-08 | Sharp Corp | Light emitting diode |
| CN102217104A (en) * | 2008-06-16 | 2011-10-12 | Lg伊诺特有限公司 | Kim geun ho [kr]; kim sung kyoon [kr]; choi hee seok |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
| CN103828073A (en) * | 2011-09-16 | 2014-05-28 | 首尔伟傲世有限公司 | Light emitting diode and method of manufacturing same |
| CN104285306A (en) * | 2012-05-08 | 2015-01-14 | 克里公司 | Light emitting diode (led) contact structures and process for fabricating the same |
| CN103426990A (en) * | 2012-05-17 | 2013-12-04 | 晶元光电股份有限公司 | Light emitting device with reflective electrode |
| US20180069155A1 (en) * | 2012-05-17 | 2018-03-08 | Epistar Corporation | Light Emitting Device with Reflective Electrode |
| KR20130096209A (en) * | 2013-07-25 | 2013-08-29 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN105552191A (en) * | 2016-02-02 | 2016-05-04 | 厦门乾照光电股份有限公司 | Light emitting diode (LED) chip electrode structure capable of promoting transverse current diffusion and with dual reflection surfaces |
| CN105591003A (en) * | 2016-03-18 | 2016-05-18 | 聚灿光电科技股份有限公司 | LED chip electrode and manufacture method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112736175A (en) * | 2019-10-28 | 2021-04-30 | 成都辰显光电有限公司 | Micro LED chip, growth substrate, display panel and micro LED chip transfer method |
| CN111697046A (en) * | 2020-07-29 | 2020-09-22 | 广州新视界光电科技有限公司 | Preparation method of display panel with OLED and LED hybrid structure and display panel |
| CN111697046B (en) * | 2020-07-29 | 2024-04-30 | 广州新视界光电科技有限公司 | Preparation method of display panel with OLED and LED hybrid structure and display panel |
| CN112242467A (en) * | 2020-10-20 | 2021-01-19 | 厦门乾照光电股份有限公司 | Manufacturing method of LED chip |
| CN112820808A (en) * | 2021-01-05 | 2021-05-18 | 华灿光电(苏州）有限公司 | Light-emitting diode chip preparation method and light-emitting diode chip |
| CN114050211A (en) * | 2021-11-10 | 2022-02-15 | 福建兆元光电有限公司 | Method for manufacturing electrode of LED chip |
| CN114388667A (en) * | 2021-12-23 | 2022-04-22 | 江西兆驰半导体有限公司 | Flip light-emitting diode chip electrode and preparation method thereof |
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