CN205231098U - Light -emitting diode - Google Patents
Light -emitting diode Download PDFInfo
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- CN205231098U CN205231098U CN201521049015.3U CN201521049015U CN205231098U CN 205231098 U CN205231098 U CN 205231098U CN 201521049015 U CN201521049015 U CN 201521049015U CN 205231098 U CN205231098 U CN 205231098U
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- type semiconductor
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- stone
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000004575 stone Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 26
- 229910002601 GaN Inorganic materials 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000012788 optical film Substances 0.000 claims description 2
- 238000005253 cladding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000004408 titanium dioxide Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
The utility model discloses a light -emitting diode, it includes: the transparency carrier, a plurality of units of heap of stone brilliant are located a surface of this base plate, the part surface that a first metal layer, this the first metal layer are located this brilliant unit of heap of stone is in order to join this brilliant unit of heap of stone brilliant unit adjacent with another of heap of stone, N is right to the bragg reflection mirror, and the part surface of brilliant units and this the first metal layer should be built a bit in the cladding, and wherein n is an integer that is greater than 6, and a second metal level, locate the right surface of this bragg reflection mirror, and this second metal level is connected without this bragg reflection mirror this the first metal layer to covering.
Description
Technical field
The utility model about a kind of light-emitting diode assembly, particularly a kind of processing procedure easily, improve the light-emitting diode assembly of thermal diffusivity.
Background technology
The application of light-emitting diode assembly is in recent years more and more extensive, and transparency carrier of arranging in pairs or groups in recent years can the LED silk lamp of LED of lighting at two sides, because external form is modelled after an antique attractive in appearance, very by the favor of consumer, is the production all having dropped into LED silk lamp with many manufacturers.
Although but the quantity Sustainable Growth of LED silk lamp, compared with coming with traditional tungsten lamp shipping Qty., still have one section of sizable gap.LED silk lamp general chief reason cannot be that LED silk lamp is for being packaged with higher requirement, comparatively complicated in making technology, to produce yield low, and price is also therefore higher.Present LED silk lamp be prior to large substrates grows up to LED unit as fado, indivedual independently LED grain is cut into again by thinning for LED unit, again multiple indivedual independently LED grain is sticked or is welded in a support plate, finally the more indivedual independently LED grain bracing wire serial connections on support plate are formed.Multi-step processing procedure so, because the loss that yield all can be caused to reduce in each step, so yield is not high.Such as cutting into the step of LED grain, yield just reduces clearly.Add yield loss when other steps apply, making that the improvement of yield becomes is the important topic of LED silk lamp product manufacturing.
Moreover LED silk lamp also has the technical problem of heat radiation to need badly to overcome, during the LED silk lamp running of particularly large wattage, large calorimetric can be produced, therefore how effectively to dispel the heat, improve electrical efficiency, also become the important topic that LED silk lamp needs to improve.The problem that illumination is not enough, light efficiency is low of LED silk lamp need be improved still to have consumer to think in addition, therefore causes LED silk lamp price and usefulness, expects to still have one section of gap from market, becomes the obstacle that LED silk lamp expands application.
But the power consumption of LED is few, and bulb life is long, it is the light source that efficiency is very high.In order to reach the target of power and energy saving, existing many manufacturers and research team drop at present, attempt to set about improvement from processing procedure or configuration aspects, expectation can improve LED silk lamp illumination, strengthens heat radiation, reduce costs, and then can develop a kind of light that can solve existing LED silk lamp Predicament of Development.
Utility model content
Main purpose of the present utility model aim to provide a kind of thermal diffusivity good and have improvement electro-optical efficiency light-emitting diode assembly.
For reaching above-mentioned purpose, the utility model forms multiple brilliant unit of heap of stone especially on a substrate, each brilliant unit of heap of stone includes n-type semiconductor unit, luminescent layer, p-type semiconductor unit and transparent electrode layer, and form multipair Bragg mirror pair at those brilliant unit of heap of stone, make those multipair Bragg mirrors to those brilliant unit of heap of stone coated, be lifted out luminous intensity through reflection ray.In other words, in known techniques, use more chip to obtain enough bright dipping total amounts, light-emitting diode assembly of the present utility model has just had the illumination of improvement simultaneously.In addition, light-emitting diode assembly of the present utility model, because of the vibrational power flow of the first metal layer and the second metal level, does not have the shortcoming that thermal diffusivity is not good, has outstanding thermal diffusivity on the contrary.
Specifically, light-emitting diode assembly of the present utility model comprises: a substrate; Multiple brilliant unit of heap of stone, is positioned at a surface of this substrate; One the first metal layer, this first metal layer is positioned at the part surface of this brilliant unit of heap of stone to link this brilliant unit of heap of stone of heap of stone brilliant unit adjacent with another; N to Bragg mirror pair, the portion of those brilliant unit of heap of stone coated and this first metal layer, wherein n is an integer being greater than 6; And one second metal level, be located at the surface that this Bragg mirror is right, and this second metal level connects without this Bragg mirror to this covered the first metal layer; Wherein, each brilliant unit of heap of stone comprises: a n-type semiconductor unit, is positioned at the surface of this substrate; A luminescent layer, is positioned on this n-type semiconductor unit; One p-type semiconductor unit, is positioned on this n-type semiconductor unit, and this luminescent layer is located between this p-type semiconductor unit and this n-type semiconductor unit, and the n-type semiconductor unit of part exposes and do not covered by this p-type semiconductor unit; And a transparent electrode layer, be positioned at the surface of this p-type semiconductor unit.
In light-emitting diode assembly of the present utility model, the sidewall of this p-type semiconductor unit and the sidewall of this luminescent layer more optionally comprise an insulating barrier.There is no particular restriction can be used as the material of insulating barrier, and the insulating layer material that any one is used in light-emitting diode assembly can be used.For example, nitride, as silicon nitride; Oxide, as silicon dioxide or aluminium oxide; Or also can use nitrogen oxide etc.This area has knows that the knowledgeable can select suitable material to form insulating barrier according to situation usually, is not specially limited in above-mentioned material.
In the utility model one exemplary embodiment, any material being used for being formed brilliant unit of heap of stone can be used in known field to form brilliant unit of heap of stone, for example, the indium gallium nitride that this n-type semiconductor unit can be a N-shaped gallium nitride, this p-type semiconductor unit is a p-type gallium nitride, this luminescent layer is plural layer silicon doping brilliant (In of heap of stone
xga
yn/GaN multiple quantum trap) and this transparent electrode layer can be ITO (tin indium oxide, IndiumTinOxide).In addition, in order to promote layer and layer interface adhesion or in order to make brilliant unit of heap of stone have other auxiliary or additional functions, also can add other known auxiliary functional layers.For example, can more comprise a gallium nitride or aluminum nitride buffer layer between substrate and this brilliant unit of heap of stone, make there is better combination between the of heap of stone brilliant unit of follow-up formation and substrate, but there is no particular restriction to this for the utility model.
The first metal layer and the second metal level can be formed by any applicable metal material, for example, can be the combination that gold, silver, copper, titanium, aluminium, chromium, nickel, platinum, beryllium, magnesium, calcium, strontium or above-mentioned any plural number plant metal material.In the utility model, the first metal layer connects two adjacent brilliant unit of heap of stone, reaches through the negative electrode of the anode (or transparency electrode) and another brilliant unit of heap of stone that connect brilliant unit of heap of stone.
In the utility model one exemplary embodiment, this second metal level can be patterned and have a gap, makes this second metal level be separated at least two independently electrodes.The region that the utility model second metal level covers is unrestricted, be preferably cover most of substrate or n to Bragg mirror to region to improve light leak, increase light organic efficiency and improve radiating efficiency.
In above-mentioned n to Bragg mirror pair, wherein this Bragg mirror repeats to be staggeredly stacked to the material by two kinds of different refractivities and is formed, and the thickness of the material of these two kinds of different refractivities may be the same or different.In the utility model, the right optical film refractive index of this Bragg mirror between 1.3 to 2.8, can be preferably between 1.45 to 2.3, is more preferred between 1.3 to 2.8.The material of two kinds of different refractivities, can be the combination of the combination of tantalum pentoxide/alundum (Al2O3), the combination of tantalum pentoxide/silicon nitride, the combination of tantalum pentoxide/silica, titania/silica, the combination of titanium dioxide/alundum (Al2O3), the combination of titanium oxide/silicon dioxide and titanium dioxide/silicon nitride, the Bragg mirror pair using titania/silica to combine in the utility model one exemplary embodiment.Thickness as the material of Bragg mirror centering two kinds of different refractivities respectively can be
between, be more preferred from
between.For example, can serve as reasons
titanium dioxide with
the Bragg mirror that forms of silicon dioxide to,
titanium dioxide with
the Bragg mirror that forms of silicon dioxide to or
titanium dioxide with
the Bragg mirror pair that forms of silicon dioxide, right the utility model is not limited to this.
The right reflectivity of Bragg mirror changes with the refringence between the number of plies of material and material, in the utility model, the right logarithm (n) of Bragg mirror is preferably 6 to above (n > 6), be more preferred from 20 to more than; As for the refringence between material, better can within the scope of 1.3 to 2.8, right the utility model is not limited to this.
In an exemplary embodiment of the present utility model, above-mentioned substrate can be any semi-conducting material with light transmission, also can be sapphire substrate, gallium nitride base board, aluminium nitride substrate, goodly can be sapphire substrate, right the utility model is not limited thereto, and this area has knows that the knowledgeable can be selected on demand usually.The shape of the substrate used in this and size are also unrestricted, can be any shape commonly used.Goodly can be rectangle, circle, polygon, ellipse, semicircle or irregular shape.
In addition, the utility model also provides a kind of manufacture method of light-emitting diode assembly, comprises the following steps:
On a substrate, form multiple independently brilliant unit of heap of stone, and each brilliant unit of heap of stone comprises: a n-type semiconductor unit, is positioned at the surface of this substrate; At least one luminescent layer, is positioned on this n-type semiconductor unit; One p-type semiconductor unit, is positioned on this n-type semiconductor unit, and this luminescent layer is located between this p-type semiconductor unit and this n-type semiconductor unit, and the n-type semiconductor unit of part exposes and do not covered by this p-type semiconductor unit; And a transparent electrode layer, be positioned at the surface of this p-type semiconductor unit;
Form the first metal layer in the surface of those brilliant unit of heap of stone, make the of heap of stone brilliant cell surface of this first metal layer cover part, to link this brilliant unit of heap of stone of heap of stone brilliant unit adjacent with another;
Form n to Bragg mirror pair, make those Bragg mirrors to the first metal layer of coated those this brilliant unit of heap of stone and part, wherein n is an integer being greater than 6; And
A surface right in this Bragg mirror forms one second metal level, and this second metal level connects without this Bragg mirror this covered the first metal layer.
In above-mentioned manufacture method, before step (a), optionally first on substrate, first form a resilient coating, such as aluminum nitride buffer layer, to make there is better combination between the of heap of stone brilliant unit of follow-up formation and substrate.
In order to avoid electric current causes short circuit via sidewall connection n-layer or metal electrode, in step (a), be more included on the sidewall of this p-type semiconductor unit and the sidewall of this luminescent layer and form an insulating barrier; Moreover the n-type semiconductor unit described in step (a) can be a N-shaped gallium nitride, and this p-type semiconductor unit can be a p-type gallium nitride.
In addition, in manufacture method of the present utility model, after step (d), more comprise a step (e), this second metal level of patterning makes this second metal level have a gap and is separated at least two independently electrodes.
Accompanying drawing explanation
Fig. 1 is the light-emitting diode assembly structural representation of the utility model one exemplary embodiment.
Fig. 2 is the vertical view of the light-emitting diode assembly structure of the utility model one exemplary embodiment.
[symbol description]
10 light-emitting diode assemblies
110 the first metal layers
120 brilliant unit of heap of stone
130 substrates
140 Bragg mirrors pair
150 second metal levels
Embodiment
Below utilize particular specific embodiment that execution mode of the present utility model is described, the personage haveing the knack of this skill can understand advantage of the present utility model and other effects easily by content disclosed in the present specification.The utility model also can be implemented by other different specific embodiments or be applied, and every details in this specification also can for different viewpoints and application, carries out various modification and change not deviating under the utility model spirit.
Embodiment 1
Fig. 1 is light-emitting diode assembly 10 structural representation of the utility model one exemplary embodiment.This light-emitting diode assembly 10 comprises: the first metal layer 110, brilliant unit 120 of heap of stone, substrate 130, Bragg mirror are to 140 and second metal level 150.
More specifically, in embodiment 1, at sapphire substrate 130 one on the surface, in 750 ~ 1200 DEG C, utilize organometallic vapor deposition method sequentially to form gallium nitride essence crystalline substance of heap of stone, N-shaped gallium nitride, luminescent layer, p-type gallium nitride under 1 atmospheric operating condition; Afterwards with manufacture of semiconductor as aforementioned brilliant material of heap of stone to be made into element with PN polarity by gold-tinted, micro-shadow, etching work procedure.Then on the sidewall of p-type gallium nitride and the sidewall of luminescent layer, chemical vapour deposition technique is utilized to form silicon nitride dielectric layer (not shown), to avoid electric current short circuit via sidewall connection n-layer or metal electrode.
Next, under vacuum, utilize electron beam evaporation plating mode, form the first metal layer 110 on the surface of those brilliant unit 120 of heap of stone with gold/nickel, make the of heap of stone brilliant cell surface of the first metal layer cover part, those brilliant unit of heap of stone can be concatenated with one anotherly connected with adjacent of heap of stone brilliant unit 120.
After forming brilliant unit of heap of stone, next under vacuum, in electron beam evaporation plating mode, form Bragg mirror to 140 on the surface of those brilliant unit 120 of heap of stone and the first metal layer 110.This Bragg mirror to 140 with
tiO
2with
siO2 formed, always have 20 layers (to), and the first metal layers 110 of those brilliant unit 120 of heap of stone coated and part, and the first metal layer 110 of part is not by this Bragg mirror 140 coated (with reference to figure 1).
Fig. 2 is the vertical view of the light-emitting diode assembly structure of the utility model embodiment 1.Can be known by Fig. 2 and see, the first metal layer 110 in a staggered manner with adjacent of heap of stone brilliant unit 120 attached in series, in other words, if overlooked by the top of light-emitting diode assembly, certain side that visible the first metal layer is positioned at the side of brilliant unit of heap of stone makes first brilliant unit of heap of stone be connected with adjacent second brilliant unit of heap of stone, and by the opposite side relative with certain side, second brilliant unit of heap of stone is connected with the adjacent the 3rd brilliant unit of heap of stone, by that analogy.
Finally, under vacuum, utilize electron beam evaporation plating mode, this Bragg mirror to 140 a surface form one second metal level 150, and this second metal level 150 is connected this covered the first metal layer 110 with without this Bragg mirror 140.And further this second metal level 150 of patterning makes 150 layers, this second metal have a gap and is separated at least two independently electrodes.
With integrating sphere under the operating condition of 80V, 15mA, the luminous intensity that goes out of the light-emitting diode assembly that actual measurement obtains is at 750 to 850mW, and electro-optical efficiency, about 60%, confirms that light-emitting diode assembly of the present utility model has excellent usefulness.
Claims (8)
1. a light-emitting diode assembly, is characterized in that, comprising:
One substrate;
Multiple brilliant unit of heap of stone, is positioned at a surface of this substrate, and each brilliant unit of heap of stone comprises:
One n-type semiconductor unit, is positioned at the surface of this substrate;
At least one luminescent layer, is positioned on this n-type semiconductor unit;
One p-type semiconductor unit, is positioned on this n-type semiconductor unit, and this luminescent layer is located between this p-type semiconductor unit and this n-type semiconductor unit, and the n-type semiconductor unit of part exposes and do not covered by this p-type semiconductor unit; And
One transparent electrode layer, is positioned at the surface of this p-type semiconductor unit;
One the first metal layer, this first metal layer is positioned at the part surface of this brilliant unit of heap of stone;
N to Bragg mirror pair, the portion of those brilliant unit of heap of stone coated and this first metal layer, wherein n is an integer being greater than 6; And
One second metal level, is located at the surface that this Bragg mirror is right, and this second metal level connects without this Bragg mirror this covered the first metal layer.
2. light-emitting diode assembly as claimed in claim 1, is characterized in that, more comprise an insulating barrier, be positioned at the sidewall of this p-type semiconductor unit and the sidewall of this luminescent layer.
3. light-emitting diode assembly as claimed in claim 1, is characterized in that, more comprise a resilient coating, is positioned at this substrate and this brilliant unit of heap of stone.
4. light-emitting diode assembly as claimed in claim 1, it is characterized in that, this n-type semiconductor unit is a N-shaped gallium nitride, and this p-type semiconductor unit is a p-type gallium nitride.
5. light-emitting diode assembly as claimed in claim 1, it is characterized in that, this second metal level is patterned and have a gap, makes this second metal level be separated at least two independently electrodes.
6. light-emitting diode assembly as claimed in claim 1, it is characterized in that, n is an integer being greater than 6.
7. light-emitting diode assembly as claimed in claim 1, is characterized in that, the right optical film refractive index of this Bragg mirror is between 1.3 to 2.8.
8. light-emitting diode assembly as claimed in claim 1, it is characterized in that, this substrate is sapphire substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521049015.3U CN205231098U (en) | 2015-12-16 | 2015-12-16 | Light -emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521049015.3U CN205231098U (en) | 2015-12-16 | 2015-12-16 | Light -emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205231098U true CN205231098U (en) | 2016-05-11 |
Family
ID=55906144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521049015.3U Expired - Fee Related CN205231098U (en) | 2015-12-16 | 2015-12-16 | Light -emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205231098U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058022A (en) * | 2016-04-29 | 2016-10-26 | 青岛杰生电气有限公司 | Inorganically packaged light-emitting apparatus and packaging method thereof |
-
2015
- 2015-12-16 CN CN201521049015.3U patent/CN205231098U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058022A (en) * | 2016-04-29 | 2016-10-26 | 青岛杰生电气有限公司 | Inorganically packaged light-emitting apparatus and packaging method thereof |
| CN106058022B (en) * | 2016-04-29 | 2018-11-09 | 青岛杰生电气有限公司 | The light-emitting device and its packaging method of inorganic encapsulated |
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