CN102569330A - Light-emitting diode with electrostatic protection and preparation method thereof - Google Patents
Light-emitting diode with electrostatic protection and preparation method thereof Download PDFInfo
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- CN102569330A CN102569330A CN201010622196XA CN201010622196A CN102569330A CN 102569330 A CN102569330 A CN 102569330A CN 201010622196X A CN201010622196X A CN 201010622196XA CN 201010622196 A CN201010622196 A CN 201010622196A CN 102569330 A CN102569330 A CN 102569330A
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Abstract
The invention provides a light-emitting diode with electrostatic protection and a preparation method thereof, relating to the photoelectric technology field. The light-emitting diode disclosed by the invention comprises a main light-emitting diode and an integrated electrostatic damage protection diode. An anode of the main light-emitting diode is connected with a cathode of the integrated electrostatic damage protection diode and is led out to be used as an anode, and a cathode of the main light-emitting diode is connected with an anode of the integrated electrostatic damage protection diode and is led out to be used as a cathode. An insulating channel which is etched on the sapphire substrate from the top face is arranged at one side of the light-emitting diode; a SiO2 insulating layer is filled into the insulating channel; and a metal contact electrode covers the periphery of the SiO2 insulating layer. According to the invention, the anti-electrostatic property of the light-emitting diode is improved and the service life of the light-emitting diode is prolonged. The light-emitting diode with the electrostatic protection has the characteristics of simpleness in manufacturing flow and lower cost, and is suitable for batch production.
Description
Technical field
The present invention relates to field of photoelectric technology, particularly light-emitting diode of static electrification protection and preparation method thereof.
Background technology
Light-emitting diode is owing to have low energy consumption, long-life, in light weight, advantage such as volume is little, has been widely used at present that signal demonstrations, display backlight source, traffic signals are indicated, outdoor advertising display screen and Landscape Lighting lamp field.And in recent years owing to be the succeeding in developing of blue LED on basis with the nitride, make light-emitting diode can realize that full color is luminous, and progressively march toward the white-light illuminating epoch.Present iii-nitride light emitting devices is a substrate with nonconducting sapphire Sapphire material mostly, because the nonconducting characteristic of Sapphire Substrate exists serious electrostatic damage ESD.In addition; No matter light-emitting diode is in manufacturing process, also being to use; Regular meeting damages because of the static discharge effect causes light-emitting diode, therefore, how manufacture and use in; Avoiding light-emitting diode because of the static discharge effect causes damage, is the big difficult point of one on light-emitting diode manufactures and designs.
In the prior art, the Chinese patent publication number is that " can prevent the light-emitting diode of electrostatic breakdown ", the Chinese patent publication number of CN 1558451A is " high anti-static high efficiency light-emitting diode and manufacture method ", the Chinese patent publication number of CN 1588657A " light-emitting diode assembly with protective circuit of diode " of being CN 1873974 etc. all designed light-emitting diode with distinct methods electrostatic preventing structure.Yet, though above-mentioned patent can improve the antistatic property of light-emitting diode, complex manufacturing technology mostly, thus cause production cost higher, yield is lower, can't be applied to a large amount of productions.
Summary of the invention
In order to overcome the deficiency that exists in the above-mentioned prior art, the purpose of this invention is to provide light-emitting diode of a kind of static electrification protection and preparation method thereof.It can improve the antistatic property of light-emitting diode, prolongs the useful life of light-emitting diode, has the characteristics that flow process is simple, cost is lower, be suitable for producing in batches of making.
In order to reach the foregoing invention purpose, technical scheme of the present invention realizes as follows:
A kind of light-emitting diode of static electrification protection, N type GaN layer, active illuminating layer, P type GaN layer and ito thin film that it comprises Sapphire Substrate and places the Sapphire Substrate top successively.Be equipped with the Metal Contact electrode respectively on ito thin film and the N type GaN layer.Its design feature is; Comprise a primary LED and an integrated electrostatic damage protection diode in the said light-emitting diode; The positive pole of primary LED links to each other with the negative pole of electrostatic damage protection diode and draws as anodal, and the negative pole of primary LED links to each other with the positive pole of electrostatic damage protection diode and draws as negative pole.One side of light-emitting diode has an insulated trenches from the topside etch to the Sapphire Substrate, is filled with SiO on the insulated trenches
2Insulating barrier, SiO
2The insulating barrier periphery is coated with the Metal Contact electrode.
The preparation method of the light-emitting diode of above-mentioned static electrification protection, it comprises the steps:
When 1) utilizing the iii-nitride light emitting devices manufacture craft to make primary LED; Accomplish the manufacture craft of electrostatic damage protection diode; The positive pole that makes primary LED links to each other with the negative pole of electrostatic damage protection diode and draws as anodal, and the negative pole of primary LED is protected the positive pole of diode to link to each other with electrostatic damage and drawn as negative pole;
2) on Sapphire Substrate with metallo-organic compound chemical vapor deposition MOCVD technology upwards epitaxial growth N type GaN layer, active illuminating layer and P type GaN layer successively;
3) utilize photoetching and dry etching technology to etch an insulated trenches that extends to Sapphire Substrate;
4) utilize photoetching and dry etching technology to etch into N type GaN layer, form N type contact GaN district;
5) utilize the method for photoetching and evaporation to prepare ito thin film at P type GaN layer upper surface;
6) utilize the method for photoetching and deposition on insulated trenches, to make SiO
2Insulating barrier;
7) method of utilizing photoetching and evaporation is made the Metal Contact electrode contacting with the N type on the ito thin film in the GaN district;
8) last, from thinning back side and polish, the cutting back forms the light-emitting diode of single static electrification protection with Sapphire Substrate.
In above-mentioned preparation method, said insulated trenches width is greater than 10 microns.
In above-mentioned preparation method, said Sapphire Substrate from thinning back side to 70 micron to 150 microns.
The present invention is owing to adopted above-mentioned structure and preparation method; When utilizing the iii-nitride light emitting devices manufacture craft to make primary LED; Both accomplish the making of electrostatic damage protection diode, and made integrated technology making flow process simple again, be suitable for large-scale production.The present invention can protect primary LED to avoid receiving electrostatic damage effectively, improves antistatic property, prolongs the useful life of light-emitting diode.
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
Description of drawings
Fig. 1 is a principle schematic of the present invention;
Fig. 2 is a structural representation of the present invention;
Fig. 3 is that the A-A of Fig. 2 is to the structural profile rotation diagram;
Fig. 4 is that the B-B of Fig. 2 is to section of structure.
Embodiment
Referring to Fig. 1 to Fig. 4, the N type GaN layer 11, active illuminating layer 12, P type GaN layer 13 and the ito thin film 14 that the present invention includes Sapphire Substrate 10 and place Sapphire Substrate 10 tops successively.Be equipped with Metal Contact electrode 16 respectively on ito thin film 14 and the N type GaN layer 11.One side of light-emitting diode has an insulated trenches of 10 from the topside etch to the Sapphire Substrate, is filled with SiO on the insulated trenches
2Insulating barrier 15, SiO
2Insulating barrier 15 peripheries are coated with Metal Contact electrode 16.Comprise a primary LED 1 and an integrated electrostatic damage protection diode 2 in the light-emitting diode; The positive pole of primary LED 1 links to each other with the negative pole of electrostatic damage protection diode 2 and draws as anodal, and the negative pole of primary LED 1 links to each other with the positive pole of electrostatic damage protection diode 2 and draws as negative pole.
The preparation method of the light-emitting diode of static electrification protection of the present invention is:
When 1) utilizing the iii-nitride light emitting devices manufacture craft to make primary LED; Accomplish the manufacture craft of electrostatic damage protection diode; The positive pole that makes primary LED 1 links to each other with the negative pole of electrostatic damage protection diode 2 and draws as anodal, and the negative pole of primary LED 1 is protected the positive pole of diode 2 to link to each other with electrostatic damage and drawn as negative pole;
2) on Sapphire Substrate 10 with metallo-organic compound chemical vapor deposition MOCVD technology upwards epitaxial growth N type GaN layer 11, active illuminating layer 12 and P type GaN layer 13 successively;
3) utilize photoetching and dry etching technology to etch a width that extends to Sapphire Substrate 10 greater than 10 microns insulated trenches;
4) utilize photoetching and dry etching technology to etch into N type GaN layer 11, form N type contact GaN district;
5) utilize the method for photoetching and electron beam evaporation to prepare ito thin film 14, and in 500 ℃～600 ℃ nitrogen atmospheres, annealed 5-10 minute, to improve the light transmittance and the conductance of ito thin film 14, to guarantee the uniformity of CURRENT DISTRIBUTION at P type GaN layer 13 upper surface;
6) utilize the method for photoetching and deposition on insulated trenches, to make SiO
2Insulating barrier 15, SiO
2Insulating barrier 15 will cover insulated trenches fully;
7) method of utilizing photoetching and electron beam evaporation is made Metal Contact electrode 16 contacting with the N type on the ito thin film 14 in the GaN district;
8) last, with Sapphire Substrate 10 from thinning back side to 70 micron to 150 microns and polish, the cutting back forms the light-emitting diode of single static electrification protection.
Claims (4)
1. the light-emitting diode of static electrification protection; N type GaN layer (11), active illuminating layer (12), P type GaN layer (13) and ito thin film (14) that it comprises Sapphire Substrate (10) and places Sapphire Substrate (10) top successively; Be equipped with Metal Contact electrode (16) respectively on ito thin film (14) and the N type GaN layer (11); It is characterized in that; Comprise a primary LED (1) and an integrated electrostatic damage protection diode (2) in the said light-emitting diode; The positive pole of primary LED (1) links to each other with the negative pole of electrostatic damage protection diode (2) and draws as anodal, and the negative pole of primary LED (1) links to each other with the positive pole of electrostatic damage protection diode (2) and draws as negative pole; One side of light-emitting diode has an insulated trenches of (10) from the topside etch to the Sapphire Substrate, is filled with SiO on the insulated trenches
2Insulating barrier (15), SiO
2Insulating barrier (15) periphery is coated with Metal Contact electrode (16).
2. the preparation method of the light-emitting diode of static electrification protection as claimed in claim 1, it comprises the steps:
When 1) utilizing the iii-nitride light emitting devices manufacture craft to make primary LED (1); Accomplish the manufacture craft of electrostatic damage protection diode (2); The positive pole that makes primary LED (1) links to each other with the negative pole of electrostatic damage protection diode (2) and draws as anodal, and the negative pole of primary LED (1) is protected the positive pole of diode (2) to link to each other with electrostatic damage and drawn as negative pole;
2) go up with metallo-organic compound chemical vapor deposition MOCVD technology make progress successively epitaxial growth N type GaN layer (11), active illuminating layer (12) and P type GaN layer (13) in Sapphire Substrate (10);
3) utilize photoetching and dry etching technology to etch an insulated trenches that extends to Sapphire Substrate (10);
4) utilize photoetching and dry etching technology to etch into N type GaN layer (11), form N type contact GaN district;
5) utilize the method for photoetching and evaporation to prepare ito thin film (14) at P type GaN layer (13) upper surface;
6) utilize the method for photoetching and deposition on insulated trenches, to make SiO
2Insulating barrier (15);
7) utilize the method for photoetching and evaporation upward to contact making Metal Contact electrode (16) in the GaN district with the N type at ito thin film (14);
8) last, from thinning back side and polish, the cutting back forms the light-emitting diode of single static electrification protection with Sapphire Substrate (10).
3. the preparation method of light-emitting diode according to claim 2 is characterized in that, said insulated trenches width is greater than 10 microns.
4. according to the preparation method of claim 2 or 3 described light-emitting diodes, it is characterized in that, said Sapphire Substrate (10) from thinning back side to 70 micron to 150 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010622196XA CN102569330A (en) | 2010-12-27 | 2010-12-27 | Light-emitting diode with electrostatic protection and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010622196XA CN102569330A (en) | 2010-12-27 | 2010-12-27 | Light-emitting diode with electrostatic protection and preparation method thereof |
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| CN102569330A true CN102569330A (en) | 2012-07-11 |
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| CN201010622196XA Pending CN102569330A (en) | 2010-12-27 | 2010-12-27 | Light-emitting diode with electrostatic protection and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293629A (en) * | 2017-07-31 | 2017-10-24 | 广东工业大学 | A kind of ultraviolet LED epitaxial chip inverted structure and preparation method thereof |
| CN108091638A (en) * | 2017-12-20 | 2018-05-29 | 聚灿光电科技股份有限公司 | Led chip and preparation method thereof |
| CN111048528A (en) * | 2019-12-19 | 2020-04-21 | 信利(仁寿)高端显示科技有限公司 | Structure and method for repairing thin film transistor array substrate electrostatic shock |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW540169B (en) * | 2001-03-29 | 2003-07-01 | Lumileds Lighting Llc | Monolithic series/parallel LED arrays formed on highly resistive substrates |
| CN1728409A (en) * | 2004-07-29 | 2006-02-01 | 晶元光电股份有限公司 | Array of luminous element with stick layer |
| CN101355118A (en) * | 2007-07-25 | 2009-01-28 | 中国科学院半导体研究所 | Method for preparing GaN power type LED using optical compound film as electrode |
| CN201927606U (en) * | 2010-12-27 | 2011-08-10 | 同方光电科技有限公司 | Light emitting diode with electrostatic protection |
-
2010
- 2010-12-27 CN CN201010622196XA patent/CN102569330A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW540169B (en) * | 2001-03-29 | 2003-07-01 | Lumileds Lighting Llc | Monolithic series/parallel LED arrays formed on highly resistive substrates |
| CN1728409A (en) * | 2004-07-29 | 2006-02-01 | 晶元光电股份有限公司 | Array of luminous element with stick layer |
| CN101355118A (en) * | 2007-07-25 | 2009-01-28 | 中国科学院半导体研究所 | Method for preparing GaN power type LED using optical compound film as electrode |
| CN201927606U (en) * | 2010-12-27 | 2011-08-10 | 同方光电科技有限公司 | Light emitting diode with electrostatic protection |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107293629A (en) * | 2017-07-31 | 2017-10-24 | 广东工业大学 | A kind of ultraviolet LED epitaxial chip inverted structure and preparation method thereof |
| CN108091638A (en) * | 2017-12-20 | 2018-05-29 | 聚灿光电科技股份有限公司 | Led chip and preparation method thereof |
| CN111048528A (en) * | 2019-12-19 | 2020-04-21 | 信利(仁寿)高端显示科技有限公司 | Structure and method for repairing thin film transistor array substrate electrostatic shock |
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Application publication date: 20120711 |