JP2003233326A - アクティブマトリクス型表示装置及びその作製方法 - Google Patents
アクティブマトリクス型表示装置及びその作製方法Info
- Publication number
- JP2003233326A JP2003233326A JP2002339235A JP2002339235A JP2003233326A JP 2003233326 A JP2003233326 A JP 2003233326A JP 2002339235 A JP2002339235 A JP 2002339235A JP 2002339235 A JP2002339235 A JP 2002339235A JP 2003233326 A JP2003233326 A JP 2003233326A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- display device
- active matrix
- circuit
- signal line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 301
- 239000010408 film Substances 0.000 claims description 285
- 239000004065 semiconductor Substances 0.000 claims description 140
- 238000000034 method Methods 0.000 claims description 115
- 239000010410 layer Substances 0.000 claims description 81
- 239000012535 impurity Substances 0.000 claims description 60
- 239000013078 crystal Substances 0.000 claims description 37
- 239000004973 liquid crystal related substance Substances 0.000 claims description 36
- 239000011521 glass Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 description 35
- 238000005530 etching Methods 0.000 description 25
- 239000011229 interlayer Substances 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 19
- 238000011282 treatment Methods 0.000 description 17
- 238000002425 crystallisation Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 230000005669 field effect Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- 238000005224 laser annealing Methods 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 12
- 239000000565 sealant Substances 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 125000006850 spacer group Chemical group 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000005499 laser crystallization Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229940078494 nickel acetate Drugs 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 102100032244 Dynein axonemal heavy chain 1 Human genes 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 101001016198 Homo sapiens Dynein axonemal heavy chain 1 Proteins 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002339235A JP2003233326A (ja) | 2001-11-30 | 2002-11-22 | アクティブマトリクス型表示装置及びその作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001367879 | 2001-11-30 | ||
| JP2001-367879 | 2001-11-30 | ||
| JP2002339235A JP2003233326A (ja) | 2001-11-30 | 2002-11-22 | アクティブマトリクス型表示装置及びその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009088808A Division JP4663799B2 (ja) | 2001-11-30 | 2009-04-01 | アクティブマトリクス型表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003233326A true JP2003233326A (ja) | 2003-08-22 |
| JP2003233326A5 JP2003233326A5 (OSRAM) | 2006-01-19 |
Family
ID=27790392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002339235A Withdrawn JP2003233326A (ja) | 2001-11-30 | 2002-11-22 | アクティブマトリクス型表示装置及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003233326A (OSRAM) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100622903B1 (ko) | 2003-08-22 | 2006-09-19 | 세이코 엡슨 가부시키가이샤 | 화소 소자 기판, 표시 장치, 전자 기기, 및 화소 소자기판의 제조 방법 |
| JP2008152226A (ja) * | 2006-12-15 | 2008-07-03 | Genta Kagi Kogyo Kofun Yugenkoshi | 電子インク表示パネルおよびその製造方法 |
| JP2014511126A (ja) * | 2011-01-31 | 2014-05-08 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 画像信号のセキュアな伸長を有するディスプレイ |
| WO2018152948A1 (zh) * | 2017-02-27 | 2018-08-30 | 武汉华星光电技术有限公司 | Oled显示模组及该显示模组的制备方法 |
| JP2019109517A (ja) * | 2014-04-25 | 2019-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2002
- 2002-11-22 JP JP2002339235A patent/JP2003233326A/ja not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100622903B1 (ko) | 2003-08-22 | 2006-09-19 | 세이코 엡슨 가부시키가이샤 | 화소 소자 기판, 표시 장치, 전자 기기, 및 화소 소자기판의 제조 방법 |
| JP2008152226A (ja) * | 2006-12-15 | 2008-07-03 | Genta Kagi Kogyo Kofun Yugenkoshi | 電子インク表示パネルおよびその製造方法 |
| JP2014511126A (ja) * | 2011-01-31 | 2014-05-08 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 画像信号のセキュアな伸長を有するディスプレイ |
| JP2019109517A (ja) * | 2014-04-25 | 2019-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2018152948A1 (zh) * | 2017-02-27 | 2018-08-30 | 武汉华星光电技术有限公司 | Oled显示模组及该显示模组的制备方法 |
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