JP2003233326A - アクティブマトリクス型表示装置及びその作製方法 - Google Patents

アクティブマトリクス型表示装置及びその作製方法

Info

Publication number
JP2003233326A
JP2003233326A JP2002339235A JP2002339235A JP2003233326A JP 2003233326 A JP2003233326 A JP 2003233326A JP 2002339235 A JP2002339235 A JP 2002339235A JP 2002339235 A JP2002339235 A JP 2002339235A JP 2003233326 A JP2003233326 A JP 2003233326A
Authority
JP
Japan
Prior art keywords
substrate
display device
active matrix
circuit
signal line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002339235A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003233326A5 (OSRAM
Inventor
Kiyoshi Kato
清 加藤
Tadashi Ozaki
匡史 尾崎
Kohei Mutaguchi
浩平 牟田口
Akira Ishikawa
明 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002339235A priority Critical patent/JP2003233326A/ja
Publication of JP2003233326A publication Critical patent/JP2003233326A/ja
Publication of JP2003233326A5 publication Critical patent/JP2003233326A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002339235A 2001-11-30 2002-11-22 アクティブマトリクス型表示装置及びその作製方法 Withdrawn JP2003233326A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002339235A JP2003233326A (ja) 2001-11-30 2002-11-22 アクティブマトリクス型表示装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001367879 2001-11-30
JP2001-367879 2001-11-30
JP2002339235A JP2003233326A (ja) 2001-11-30 2002-11-22 アクティブマトリクス型表示装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009088808A Division JP4663799B2 (ja) 2001-11-30 2009-04-01 アクティブマトリクス型表示装置

Publications (2)

Publication Number Publication Date
JP2003233326A true JP2003233326A (ja) 2003-08-22
JP2003233326A5 JP2003233326A5 (OSRAM) 2006-01-19

Family

ID=27790392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002339235A Withdrawn JP2003233326A (ja) 2001-11-30 2002-11-22 アクティブマトリクス型表示装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP2003233326A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100622903B1 (ko) 2003-08-22 2006-09-19 세이코 엡슨 가부시키가이샤 화소 소자 기판, 표시 장치, 전자 기기, 및 화소 소자기판의 제조 방법
JP2008152226A (ja) * 2006-12-15 2008-07-03 Genta Kagi Kogyo Kofun Yugenkoshi 電子インク表示パネルおよびその製造方法
JP2014511126A (ja) * 2011-01-31 2014-05-08 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 画像信号のセキュアな伸長を有するディスプレイ
WO2018152948A1 (zh) * 2017-02-27 2018-08-30 武汉华星光电技术有限公司 Oled显示模组及该显示模组的制备方法
JP2019109517A (ja) * 2014-04-25 2019-07-04 株式会社半導体エネルギー研究所 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100622903B1 (ko) 2003-08-22 2006-09-19 세이코 엡슨 가부시키가이샤 화소 소자 기판, 표시 장치, 전자 기기, 및 화소 소자기판의 제조 방법
JP2008152226A (ja) * 2006-12-15 2008-07-03 Genta Kagi Kogyo Kofun Yugenkoshi 電子インク表示パネルおよびその製造方法
JP2014511126A (ja) * 2011-01-31 2014-05-08 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 画像信号のセキュアな伸長を有するディスプレイ
JP2019109517A (ja) * 2014-04-25 2019-07-04 株式会社半導体エネルギー研究所 半導体装置
WO2018152948A1 (zh) * 2017-02-27 2018-08-30 武汉华星光电技术有限公司 Oled显示模组及该显示模组的制备方法

Similar Documents

Publication Publication Date Title
JP4663799B2 (ja) アクティブマトリクス型表示装置
US7935968B2 (en) Semiconductor device
US6882012B2 (en) Semiconductor device and a method of manufacturing the same
US8564578B2 (en) Semiconductor device
US20020027247A1 (en) Semiconductor device and method of manufacturing the same
JP2003152191A (ja) 半導体装置およびその作製方法
US8445338B2 (en) Semiconductor device and method for manufacturing the same
JP5264017B2 (ja) 半導体装置の作製方法
US6956234B2 (en) Passive matrix display device
JP3993630B2 (ja) 半導体装置の作製方法
JP4255681B2 (ja) パッシブマトリクス型表示装置
JP2003233326A (ja) アクティブマトリクス型表示装置及びその作製方法
JP3934538B2 (ja) 半導体装置の作製方法
JP3934537B2 (ja) 半導体装置
JP5094099B2 (ja) 半導体装置の作製方法
JP2002189429A (ja) 半導体装置およびその作製方法
JP2001345454A (ja) 半導体装置およびその作製方法
JP2002118265A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051117

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051117

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081125

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090217

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20090413