JP2003229578A - 半導体装置、表示装置およびその作製方法 - Google Patents

半導体装置、表示装置およびその作製方法

Info

Publication number
JP2003229578A
JP2003229578A JP2002157889A JP2002157889A JP2003229578A JP 2003229578 A JP2003229578 A JP 2003229578A JP 2002157889 A JP2002157889 A JP 2002157889A JP 2002157889 A JP2002157889 A JP 2002157889A JP 2003229578 A JP2003229578 A JP 2003229578A
Authority
JP
Japan
Prior art keywords
region
layer
film
light
concentration impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002157889A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229578A5 (enExample
Inventor
Hiroshi Shibata
寛 柴田
Shinji Maekawa
慎志 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002157889A priority Critical patent/JP2003229578A/ja
Publication of JP2003229578A publication Critical patent/JP2003229578A/ja
Publication of JP2003229578A5 publication Critical patent/JP2003229578A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
JP2002157889A 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法 Withdrawn JP2003229578A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002157889A JP2003229578A (ja) 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001166877 2001-06-01
JP2001-166877 2001-06-01
JP2001230701 2001-07-31
JP2001-230701 2001-07-31
JP2001367575 2001-11-30
JP2001-367575 2001-11-30
JP2002157889A JP2003229578A (ja) 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005157524A Division JP2005322935A (ja) 2001-06-01 2005-05-30 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JP2003229578A true JP2003229578A (ja) 2003-08-15
JP2003229578A5 JP2003229578A5 (enExample) 2005-10-06

Family

ID=27761515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002157889A Withdrawn JP2003229578A (ja) 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2003229578A (enExample)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2005197618A (ja) * 2004-01-09 2005-07-21 Nec Corp 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器
JP2008078176A (ja) * 2006-09-19 2008-04-03 Hitachi Displays Ltd 表示装置の製造方法
US7368755B2 (en) 2004-04-12 2008-05-06 Lg. Philips Lcd. Co., Ltd Array substrate of liquid crystal display and fabrication method thereof
US7649202B2 (en) 2004-06-25 2010-01-19 Samsung Mobile Display Co., Ltd. Transistor, method of fabricating the same, and light emitting display comprising the same
US7821006B2 (en) 2005-07-14 2010-10-26 Samsung Electronics Co., Ltd. Liquid crystal display comprising light sensing TFT having opening in gate electrode
WO2011001728A1 (ja) * 2009-07-01 2011-01-06 シャープ株式会社 アクティブマトリクス基板及び有機ｅｌ表示装置
JP2011118384A (ja) * 2009-12-01 2011-06-16 Samsung Mobile Display Co Ltd 平板表示装置及びその製造方法
JP2011222935A (ja) * 2010-04-12 2011-11-04 Samsung Mobile Display Co Ltd 薄膜トランジスタ、その製造方法、及びこれを含む表示装置
KR101087993B1 (ko) 2005-11-02 2011-12-01 엘지디스플레이 주식회사 다결정 실리콘 박막트랜지스터
WO2012035984A1 (en) * 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8860032B2 (en) 2008-10-21 2014-10-14 Samsung Display Co., Ltd. Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
JP2017085123A (ja) * 2005-07-22 2017-05-18 株式会社半導体エネルギー研究所 発光装置
CN107393965A (zh) * 2017-07-17 2017-11-24 华南理工大学 平面双栅氧化物薄膜晶体管及其制备方法
JP2020016908A (ja) * 2006-05-16 2020-01-30 株式会社半導体エネルギー研究所 液晶表示装置
CN111834465A (zh) * 2019-12-09 2020-10-27 云谷（固安）科技有限公司 阵列基板、显示面板及显示装置
JP2021067766A (ja) * 2019-10-21 2021-04-30 セイコーエプソン株式会社 電気光学装置および電子機器
CN114002887A (zh) * 2021-11-01 2022-02-01 武汉华星光电技术有限公司 阵列基板和显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265940A (ja) * 1992-09-25 1994-09-22 Sony Corp 液晶表示装置
JPH07263705A (ja) * 1994-03-24 1995-10-13 Sony Corp 薄膜トランジスタ
JP2001144301A (ja) * 1999-08-31 2001-05-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002185010A (ja) * 2000-12-19 2002-06-28 Sharp Corp 薄膜トランジスタおよびその製造方法ならびに液晶表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265940A (ja) * 1992-09-25 1994-09-22 Sony Corp 液晶表示装置
JPH07263705A (ja) * 1994-03-24 1995-10-13 Sony Corp 薄膜トランジスタ
JP2001144301A (ja) * 1999-08-31 2001-05-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002185010A (ja) * 2000-12-19 2002-06-28 Sharp Corp 薄膜トランジスタおよびその製造方法ならびに液晶表示装置

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2005197618A (ja) * 2004-01-09 2005-07-21 Nec Corp 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器
US7633571B2 (en) 2004-01-09 2009-12-15 Nec Corporation Thin-film transistor with semiconductor layer and off-leak current characteristics
US7666695B2 (en) * 2004-04-12 2010-02-23 Lg. Display Co., Ltd. Array substrates of liquid crystal display and fabrication method thereof
US7368755B2 (en) 2004-04-12 2008-05-06 Lg. Philips Lcd. Co., Ltd Array substrate of liquid crystal display and fabrication method thereof
CN100432806C (zh) * 2004-04-12 2008-11-12 乐金显示有限公司 Lcd阵列基板的制造方法
US7649202B2 (en) 2004-06-25 2010-01-19 Samsung Mobile Display Co., Ltd. Transistor, method of fabricating the same, and light emitting display comprising the same
US8541811B2 (en) 2005-07-14 2013-09-24 Samsung Display Co., Ltd. TFT with improved light sensing and TFT substrate using the same and liquid crystal display
US7821006B2 (en) 2005-07-14 2010-10-26 Samsung Electronics Co., Ltd. Liquid crystal display comprising light sensing TFT having opening in gate electrode
JP7528151B2 (ja) 2005-07-22 2024-08-05 株式会社半導体エネルギー研究所 発光装置
JP2017085123A (ja) * 2005-07-22 2017-05-18 株式会社半導体エネルギー研究所 発光装置
JP2018067723A (ja) * 2005-07-22 2018-04-26 株式会社半導体エネルギー研究所 発光装置
JP2022125102A (ja) * 2005-07-22 2022-08-26 株式会社半導体エネルギー研究所 半導体装置
US10103270B2 (en) 2005-07-22 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101087993B1 (ko) 2005-11-02 2011-12-01 엘지디스플레이 주식회사 다결정 실리콘 박막트랜지스터
US11726371B2 (en) 2006-05-16 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. FFS-mode liquid crystal display device comprising a top-gate transistor and an auxiliary wiring connected to a common electrode in a pixel portion
US11061285B2 (en) 2006-05-16 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a dogleg-like shaped pixel electrode in a plane view having a plurality of dogleg-like shaped openings and semiconductor device
JP2020016908A (ja) * 2006-05-16 2020-01-30 株式会社半導体エネルギー研究所 液晶表示装置
US11106096B2 (en) 2006-05-16 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
US11435626B2 (en) 2006-05-16 2022-09-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
JP2008078176A (ja) * 2006-09-19 2008-04-03 Hitachi Displays Ltd 表示装置の製造方法
US8860032B2 (en) 2008-10-21 2014-10-14 Samsung Display Co., Ltd. Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
CN102473367A (zh) * 2009-07-01 2012-05-23 夏普株式会社 有源矩阵基板和有机el显示装置
WO2011001728A1 (ja) * 2009-07-01 2011-01-06 シャープ株式会社 アクティブマトリクス基板及び有機ｅｌ表示装置
CN102473367B (zh) * 2009-07-01 2014-09-03 夏普株式会社 有源矩阵基板和有机el显示装置
US8947414B2 (en) 2009-07-01 2015-02-03 Sharp Kabushiki Kaisha Active matrix substrate and organic EL display device
JP5502864B2 (ja) * 2009-07-01 2014-05-28 シャープ株式会社 アクティブマトリクス基板及び有機ｅｌ表示装置
JP2011118384A (ja) * 2009-12-01 2011-06-16 Samsung Mobile Display Co Ltd 平板表示装置及びその製造方法
JP2011222935A (ja) * 2010-04-12 2011-11-04 Samsung Mobile Display Co Ltd 薄膜トランジスタ、その製造方法、及びこれを含む表示装置
KR101426515B1 (ko) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US8405092B2 (en) 2010-09-15 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2012035984A1 (en) * 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8884302B2 (en) 2010-09-15 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Display device
CN107393965A (zh) * 2017-07-17 2017-11-24 华南理工大学 平面双栅氧化物薄膜晶体管及其制备方法
JP2021067766A (ja) * 2019-10-21 2021-04-30 セイコーエプソン株式会社 電気光学装置および電子機器
JP7352826B2 (ja) 2019-10-21 2023-09-29 セイコーエプソン株式会社 電気光学装置および電子機器
CN111834465A (zh) * 2019-12-09 2020-10-27 云谷（固安）科技有限公司 阵列基板、显示面板及显示装置
CN111834465B (zh) * 2019-12-09 2024-08-02 云谷（固安）科技有限公司 阵列基板、显示面板及显示装置
CN114002887A (zh) * 2021-11-01 2022-02-01 武汉华星光电技术有限公司 阵列基板和显示面板
CN114002887B (zh) * 2021-11-01 2022-10-04 武汉华星光电技术有限公司 阵列基板和显示面板
US12501704B2 (en) 2021-11-01 2025-12-16 Wuhan China Star Optoelectronics Technology Co., Ltd. Array substrate and display panel

Similar Documents

Publication Publication Date Title
US9362410B2 (en) Semiconductor device, manufacturing method thereof, and display device
JP5025057B2 (ja) 半導体装置の作製方法
US7033871B2 (en) Method of manufacturing semiconductor device
US6743700B2 (en) Semiconductor film, semiconductor device and method of their production
KR100848668B1 (ko) 액티브 매트릭스 장치 제작방법
JP5046452B2 (ja) 半導体装置の作製方法
US6713323B2 (en) Semiconductor device and method of manufacturing the same
US6808968B2 (en) Method of manufacturing a semiconductor device
US6890840B2 (en) Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization
JP2003229578A (ja) 半導体装置、表示装置およびその作製方法
US7141823B2 (en) Thin film transistor semiconductor device
JP2005322935A (ja) 半導体装置およびその作製方法
JP4346852B2 (ja) 半導体装置の作製方法
JP4818288B2 (ja) 半導体装置の作製方法
JP5072147B2 (ja) 半導体装置の作製方法
JP5078201B2 (ja) 半導体装置の作製方法
JP4993802B2 (ja) 半導体装置
JP2002305209A (ja) 半導体装置の作製方法
JP2000124131A (ja) 半導体装置およびその製造方法
JP2002118265A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050530

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050530

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070918

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080425

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090203

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090403

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090518

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090703

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20110912