JP2003229578A - 半導体装置、表示装置およびその作製方法 - Google Patents

半導体装置、表示装置およびその作製方法

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Publication number
JP2003229578A
JP2003229578A JP2002157889A JP2002157889A JP2003229578A JP 2003229578 A JP2003229578 A JP 2003229578A JP 2002157889 A JP2002157889 A JP 2002157889A JP 2002157889 A JP2002157889 A JP 2002157889A JP 2003229578 A JP2003229578 A JP 2003229578A
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JP
Japan
Prior art keywords
region
layer
film
light
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002157889A
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English (en)
Japanese (ja)
Other versions
JP2003229578A5 (enrdf_load_stackoverflow
Inventor
Hiroshi Shibata
寛 柴田
Shinji Maekawa
慎志 前川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002157889A priority Critical patent/JP2003229578A/ja
Publication of JP2003229578A publication Critical patent/JP2003229578A/ja
Publication of JP2003229578A5 publication Critical patent/JP2003229578A5/ja
Withdrawn legal-status Critical Current

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Shift Register Type Memory (AREA)
  • Thin Film Transistor (AREA)
JP2002157889A 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法 Withdrawn JP2003229578A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002157889A JP2003229578A (ja) 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2001-166877 2001-06-01
JP2001166877 2001-06-01
JP2001230701 2001-07-31
JP2001-230701 2001-07-31
JP2001367575 2001-11-30
JP2001-367575 2001-11-30
JP2002157889A JP2003229578A (ja) 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005157524A Division JP2005322935A (ja) 2001-06-01 2005-05-30 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JP2003229578A true JP2003229578A (ja) 2003-08-15
JP2003229578A5 JP2003229578A5 (enrdf_load_stackoverflow) 2005-10-06

Family

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JP2002157889A Withdrawn JP2003229578A (ja) 2001-06-01 2002-05-30 半導体装置、表示装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2003229578A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2005197618A (ja) * 2004-01-09 2005-07-21 Nec Corp 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器
JP2008078176A (ja) * 2006-09-19 2008-04-03 Hitachi Displays Ltd 表示装置の製造方法
US7368755B2 (en) 2004-04-12 2008-05-06 Lg. Philips Lcd. Co., Ltd Array substrate of liquid crystal display and fabrication method thereof
US7649202B2 (en) 2004-06-25 2010-01-19 Samsung Mobile Display Co., Ltd. Transistor, method of fabricating the same, and light emitting display comprising the same
US7821006B2 (en) 2005-07-14 2010-10-26 Samsung Electronics Co., Ltd. Liquid crystal display comprising light sensing TFT having opening in gate electrode
WO2011001728A1 (ja) * 2009-07-01 2011-01-06 シャープ株式会社 アクティブマトリクス基板及び有機el表示装置
JP2011118384A (ja) * 2009-12-01 2011-06-16 Samsung Mobile Display Co Ltd 平板表示装置及びその製造方法
JP2011222935A (ja) * 2010-04-12 2011-11-04 Samsung Mobile Display Co Ltd 薄膜トランジスタ、その製造方法、及びこれを含む表示装置
KR101087993B1 (ko) 2005-11-02 2011-12-01 엘지디스플레이 주식회사 다결정 실리콘 박막트랜지스터
WO2012035984A1 (en) * 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8860032B2 (en) 2008-10-21 2014-10-14 Samsung Display Co., Ltd. Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
JP2017085123A (ja) * 2005-07-22 2017-05-18 株式会社半導体エネルギー研究所 発光装置
CN107393965A (zh) * 2017-07-17 2017-11-24 华南理工大学 平面双栅氧化物薄膜晶体管及其制备方法
JP2020016908A (ja) * 2006-05-16 2020-01-30 株式会社半導体エネルギー研究所 液晶表示装置
CN111834465A (zh) * 2019-12-09 2020-10-27 云谷(固安)科技有限公司 阵列基板、显示面板及显示装置
JP2021067766A (ja) * 2019-10-21 2021-04-30 セイコーエプソン株式会社 電気光学装置および電子機器
CN114002887A (zh) * 2021-11-01 2022-02-01 武汉华星光电技术有限公司 阵列基板和显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265940A (ja) * 1992-09-25 1994-09-22 Sony Corp 液晶表示装置
JPH07263705A (ja) * 1994-03-24 1995-10-13 Sony Corp 薄膜トランジスタ
JP2001144301A (ja) * 1999-08-31 2001-05-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002185010A (ja) * 2000-12-19 2002-06-28 Sharp Corp 薄膜トランジスタおよびその製造方法ならびに液晶表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06265940A (ja) * 1992-09-25 1994-09-22 Sony Corp 液晶表示装置
JPH07263705A (ja) * 1994-03-24 1995-10-13 Sony Corp 薄膜トランジスタ
JP2001144301A (ja) * 1999-08-31 2001-05-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2002185010A (ja) * 2000-12-19 2002-06-28 Sharp Corp 薄膜トランジスタおよびその製造方法ならびに液晶表示装置

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2005197618A (ja) * 2004-01-09 2005-07-21 Nec Corp 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器
US7633571B2 (en) 2004-01-09 2009-12-15 Nec Corporation Thin-film transistor with semiconductor layer and off-leak current characteristics
US7666695B2 (en) * 2004-04-12 2010-02-23 Lg. Display Co., Ltd. Array substrates of liquid crystal display and fabrication method thereof
US7368755B2 (en) 2004-04-12 2008-05-06 Lg. Philips Lcd. Co., Ltd Array substrate of liquid crystal display and fabrication method thereof
CN100432806C (zh) * 2004-04-12 2008-11-12 乐金显示有限公司 Lcd阵列基板的制造方法
US7649202B2 (en) 2004-06-25 2010-01-19 Samsung Mobile Display Co., Ltd. Transistor, method of fabricating the same, and light emitting display comprising the same
US8541811B2 (en) 2005-07-14 2013-09-24 Samsung Display Co., Ltd. TFT with improved light sensing and TFT substrate using the same and liquid crystal display
US7821006B2 (en) 2005-07-14 2010-10-26 Samsung Electronics Co., Ltd. Liquid crystal display comprising light sensing TFT having opening in gate electrode
JP7528151B2 (ja) 2005-07-22 2024-08-05 株式会社半導体エネルギー研究所 発光装置
JP2017085123A (ja) * 2005-07-22 2017-05-18 株式会社半導体エネルギー研究所 発光装置
JP2018067723A (ja) * 2005-07-22 2018-04-26 株式会社半導体エネルギー研究所 発光装置
JP2022125102A (ja) * 2005-07-22 2022-08-26 株式会社半導体エネルギー研究所 半導体装置
US10103270B2 (en) 2005-07-22 2018-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101087993B1 (ko) 2005-11-02 2011-12-01 엘지디스플레이 주식회사 다결정 실리콘 박막트랜지스터
US11726371B2 (en) 2006-05-16 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. FFS-mode liquid crystal display device comprising a top-gate transistor and an auxiliary wiring connected to a common electrode in a pixel portion
US11061285B2 (en) 2006-05-16 2021-07-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device comprising a dogleg-like shaped pixel electrode in a plane view having a plurality of dogleg-like shaped openings and semiconductor device
JP2020016908A (ja) * 2006-05-16 2020-01-30 株式会社半導体エネルギー研究所 液晶表示装置
US11106096B2 (en) 2006-05-16 2021-08-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
US11435626B2 (en) 2006-05-16 2022-09-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and semiconductor device
JP2008078176A (ja) * 2006-09-19 2008-04-03 Hitachi Displays Ltd 表示装置の製造方法
US8860032B2 (en) 2008-10-21 2014-10-14 Samsung Display Co., Ltd. Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics
CN102473367A (zh) * 2009-07-01 2012-05-23 夏普株式会社 有源矩阵基板和有机el显示装置
WO2011001728A1 (ja) * 2009-07-01 2011-01-06 シャープ株式会社 アクティブマトリクス基板及び有機el表示装置
CN102473367B (zh) * 2009-07-01 2014-09-03 夏普株式会社 有源矩阵基板和有机el显示装置
US8947414B2 (en) 2009-07-01 2015-02-03 Sharp Kabushiki Kaisha Active matrix substrate and organic EL display device
JP5502864B2 (ja) * 2009-07-01 2014-05-28 シャープ株式会社 アクティブマトリクス基板及び有機el表示装置
JP2011118384A (ja) * 2009-12-01 2011-06-16 Samsung Mobile Display Co Ltd 平板表示装置及びその製造方法
JP2011222935A (ja) * 2010-04-12 2011-11-04 Samsung Mobile Display Co Ltd 薄膜トランジスタ、その製造方法、及びこれを含む表示装置
KR101426515B1 (ko) 2010-09-15 2014-08-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 표시 장치
US8405092B2 (en) 2010-09-15 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2012035984A1 (en) * 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US8884302B2 (en) 2010-09-15 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Display device
CN107393965A (zh) * 2017-07-17 2017-11-24 华南理工大学 平面双栅氧化物薄膜晶体管及其制备方法
JP2021067766A (ja) * 2019-10-21 2021-04-30 セイコーエプソン株式会社 電気光学装置および電子機器
JP7352826B2 (ja) 2019-10-21 2023-09-29 セイコーエプソン株式会社 電気光学装置および電子機器
CN111834465A (zh) * 2019-12-09 2020-10-27 云谷(固安)科技有限公司 阵列基板、显示面板及显示装置
CN111834465B (zh) * 2019-12-09 2024-08-02 云谷(固安)科技有限公司 阵列基板、显示面板及显示装置
CN114002887A (zh) * 2021-11-01 2022-02-01 武汉华星光电技术有限公司 阵列基板和显示面板
CN114002887B (zh) * 2021-11-01 2022-10-04 武汉华星光电技术有限公司 阵列基板和显示面板

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