JP2003229578A - 半導体装置、表示装置およびその作製方法 - Google Patents
半導体装置、表示装置およびその作製方法Info
- Publication number
- JP2003229578A JP2003229578A JP2002157889A JP2002157889A JP2003229578A JP 2003229578 A JP2003229578 A JP 2003229578A JP 2002157889 A JP2002157889 A JP 2002157889A JP 2002157889 A JP2002157889 A JP 2002157889A JP 2003229578 A JP2003229578 A JP 2003229578A
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Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
- Shift Register Type Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002157889A JP2003229578A (ja) | 2001-06-01 | 2002-05-30 | 半導体装置、表示装置およびその作製方法 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-166877 | 2001-06-01 | ||
JP2001166877 | 2001-06-01 | ||
JP2001230701 | 2001-07-31 | ||
JP2001-230701 | 2001-07-31 | ||
JP2001367575 | 2001-11-30 | ||
JP2001-367575 | 2001-11-30 | ||
JP2002157889A JP2003229578A (ja) | 2001-06-01 | 2002-05-30 | 半導体装置、表示装置およびその作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005157524A Division JP2005322935A (ja) | 2001-06-01 | 2005-05-30 | 半導体装置およびその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003229578A true JP2003229578A (ja) | 2003-08-15 |
JP2003229578A5 JP2003229578A5 (enrdf_load_stackoverflow) | 2005-10-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002157889A Withdrawn JP2003229578A (ja) | 2001-06-01 | 2002-05-30 | 半導体装置、表示装置およびその作製方法 |
Country Status (1)
Country | Link |
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JP (1) | JP2003229578A (enrdf_load_stackoverflow) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005134542A (ja) * | 2003-10-29 | 2005-05-26 | Seiko Epson Corp | 電気光学装置用基板及びその製造方法並びに電気光学装置 |
JP2005197618A (ja) * | 2004-01-09 | 2005-07-21 | Nec Corp | 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器 |
JP2008078176A (ja) * | 2006-09-19 | 2008-04-03 | Hitachi Displays Ltd | 表示装置の製造方法 |
US7368755B2 (en) | 2004-04-12 | 2008-05-06 | Lg. Philips Lcd. Co., Ltd | Array substrate of liquid crystal display and fabrication method thereof |
US7649202B2 (en) | 2004-06-25 | 2010-01-19 | Samsung Mobile Display Co., Ltd. | Transistor, method of fabricating the same, and light emitting display comprising the same |
US7821006B2 (en) | 2005-07-14 | 2010-10-26 | Samsung Electronics Co., Ltd. | Liquid crystal display comprising light sensing TFT having opening in gate electrode |
WO2011001728A1 (ja) * | 2009-07-01 | 2011-01-06 | シャープ株式会社 | アクティブマトリクス基板及び有機el表示装置 |
JP2011118384A (ja) * | 2009-12-01 | 2011-06-16 | Samsung Mobile Display Co Ltd | 平板表示装置及びその製造方法 |
JP2011222935A (ja) * | 2010-04-12 | 2011-11-04 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ、その製造方法、及びこれを含む表示装置 |
KR101087993B1 (ko) | 2005-11-02 | 2011-12-01 | 엘지디스플레이 주식회사 | 다결정 실리콘 박막트랜지스터 |
WO2012035984A1 (en) * | 2010-09-15 | 2012-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
US8860032B2 (en) | 2008-10-21 | 2014-10-14 | Samsung Display Co., Ltd. | Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics |
JP2017085123A (ja) * | 2005-07-22 | 2017-05-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
CN107393965A (zh) * | 2017-07-17 | 2017-11-24 | 华南理工大学 | 平面双栅氧化物薄膜晶体管及其制备方法 |
JP2020016908A (ja) * | 2006-05-16 | 2020-01-30 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
CN111834465A (zh) * | 2019-12-09 | 2020-10-27 | 云谷(固安)科技有限公司 | 阵列基板、显示面板及显示装置 |
JP2021067766A (ja) * | 2019-10-21 | 2021-04-30 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
CN114002887A (zh) * | 2021-11-01 | 2022-02-01 | 武汉华星光电技术有限公司 | 阵列基板和显示面板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06265940A (ja) * | 1992-09-25 | 1994-09-22 | Sony Corp | 液晶表示装置 |
JPH07263705A (ja) * | 1994-03-24 | 1995-10-13 | Sony Corp | 薄膜トランジスタ |
JP2001144301A (ja) * | 1999-08-31 | 2001-05-25 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2002185010A (ja) * | 2000-12-19 | 2002-06-28 | Sharp Corp | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置 |
-
2002
- 2002-05-30 JP JP2002157889A patent/JP2003229578A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265940A (ja) * | 1992-09-25 | 1994-09-22 | Sony Corp | 液晶表示装置 |
JPH07263705A (ja) * | 1994-03-24 | 1995-10-13 | Sony Corp | 薄膜トランジスタ |
JP2001144301A (ja) * | 1999-08-31 | 2001-05-25 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2002185010A (ja) * | 2000-12-19 | 2002-06-28 | Sharp Corp | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置 |
Cited By (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005134542A (ja) * | 2003-10-29 | 2005-05-26 | Seiko Epson Corp | 電気光学装置用基板及びその製造方法並びに電気光学装置 |
JP2005197618A (ja) * | 2004-01-09 | 2005-07-21 | Nec Corp | 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器 |
US7633571B2 (en) | 2004-01-09 | 2009-12-15 | Nec Corporation | Thin-film transistor with semiconductor layer and off-leak current characteristics |
US7666695B2 (en) * | 2004-04-12 | 2010-02-23 | Lg. Display Co., Ltd. | Array substrates of liquid crystal display and fabrication method thereof |
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