JP2003203925A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

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Publication number
JP2003203925A
JP2003203925A JP2002310581A JP2002310581A JP2003203925A JP 2003203925 A JP2003203925 A JP 2003203925A JP 2002310581 A JP2002310581 A JP 2002310581A JP 2002310581 A JP2002310581 A JP 2002310581A JP 2003203925 A JP2003203925 A JP 2003203925A
Authority
JP
Japan
Prior art keywords
film
semiconductor film
semiconductor device
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002310581A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003203925A5 (https=
Inventor
Tatsuya Honda
達也 本田
Hideomi Suzawa
英臣 須澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002310581A priority Critical patent/JP2003203925A/ja
Publication of JP2003203925A publication Critical patent/JP2003203925A/ja
Publication of JP2003203925A5 publication Critical patent/JP2003203925A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2002310581A 2001-10-26 2002-10-25 半導体装置およびその作製方法 Withdrawn JP2003203925A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002310581A JP2003203925A (ja) 2001-10-26 2002-10-25 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001328701 2001-10-26
JP2001-328701 2001-10-26
JP2002310581A JP2003203925A (ja) 2001-10-26 2002-10-25 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JP2003203925A true JP2003203925A (ja) 2003-07-18
JP2003203925A5 JP2003203925A5 (https=) 2005-12-08

Family

ID=27666524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002310581A Withdrawn JP2003203925A (ja) 2001-10-26 2002-10-25 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JP2003203925A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006011369A1 (ja) * 2004-07-29 2006-02-02 Nec Corporation 電界効果型トランジスタ用の基板、電界効果型トランジスタ及びその製造方法
KR100841380B1 (ko) * 2005-08-10 2008-06-26 미쓰비시덴키 가부시키가이샤 박막트랜지스터 및 그 제조방법
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
CN102618013A (zh) * 2012-03-30 2012-08-01 电子科技大学 一种印制电路复合基板材料和绝缘基板及其制备方法
US8853782B2 (en) 2006-12-05 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN104638017A (zh) * 2015-02-04 2015-05-20 京东方科技集团股份有限公司 薄膜晶体管、像素结构及其制作方法、阵列基板、显示装置
JP2018037412A (ja) * 2008-10-16 2018-03-08 株式会社半導体エネルギー研究所 表示装置
CN111430462A (zh) * 2019-01-10 2020-07-17 三星电子株式会社 半导体装置
EP3685443A4 (en) * 2017-09-18 2021-04-21 INTEL Corporation STRESS THIN LAYER TRANSISTORS

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006011369A1 (ja) * 2004-07-29 2006-02-02 Nec Corporation 電界効果型トランジスタ用の基板、電界効果型トランジスタ及びその製造方法
KR100841380B1 (ko) * 2005-08-10 2008-06-26 미쓰비시덴키 가부시키가이샤 박막트랜지스터 및 그 제조방법
US7709841B2 (en) 2005-08-10 2010-05-04 Mitsubishi Denki Kabushiki Kaisha Thin film transistor having an island like semiconductor layer on an insulator
US7851277B2 (en) 2006-12-05 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US8283669B2 (en) 2006-12-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US8853782B2 (en) 2006-12-05 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10340319B2 (en) 2008-10-16 2019-07-02 Semiconductor Energy Laboratory Co., Ltd. Organic light-emitting device having a color filter
US11930668B2 (en) 2008-10-16 2024-03-12 Semiconductor Energy Laboratory Co., Ltd. Flexible light-emitting device and EL module including transparent conductive film
US11189676B2 (en) 2008-10-16 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having fluorescent and phosphorescent materials
JP2018037412A (ja) * 2008-10-16 2018-03-08 株式会社半導体エネルギー研究所 表示装置
CN102618013A (zh) * 2012-03-30 2012-08-01 电子科技大学 一种印制电路复合基板材料和绝缘基板及其制备方法
US9741750B2 (en) 2015-02-04 2017-08-22 Boe Technology Group Co., Ltd. Thin film transistor, pixel structure, and method for manufacturing the same, array substrate and display device
CN104638017B (zh) * 2015-02-04 2017-10-13 京东方科技集团股份有限公司 薄膜晶体管、像素结构及其制作方法、阵列基板、显示装置
CN104638017A (zh) * 2015-02-04 2015-05-20 京东方科技集团股份有限公司 薄膜晶体管、像素结构及其制作方法、阵列基板、显示装置
EP3685443A4 (en) * 2017-09-18 2021-04-21 INTEL Corporation STRESS THIN LAYER TRANSISTORS
US11342457B2 (en) 2017-09-18 2022-05-24 Intel Corporation Strained thin film transistors
CN111430462A (zh) * 2019-01-10 2020-07-17 三星电子株式会社 半导体装置

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