JP2003189593A - Gate drive circuit for insulating gate type semiconductor element, insulating gate type semiconductor module and power conversion unit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain high reliability by preventing the short circuit of a power source that is parallel with a series body even if an element temperature rises in the series body of an insulating gate type semiconductor element. <P>SOLUTION: A gate drive circuit comprises temperature detection means 50, 15 that detect an element temperature of the insulating gate type semiconductor element 1. The circuit also comprises the power source wherein a voltage is divided by a variable resistor 13 that varies a resistance according to the element temperature and by a fixed resistor 14 that shows a fixed value, or divided by a diode 15 that is the temperature detection means and by the fixed resistor 14, and wherein the negative bias of a voltage output is increased by the resistance variation of the variable resistor 13 or the diode 15 associated with a rise in temperature of the insulating gate type semiconductor element. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gate drive circuit for an insulated gate semiconductor device, an insulated gate semiconductor module and a power converter.

[0002]

2. Description of the Related Art Conventionally, insulated gate semiconductor devices have been used in, for example, MOS-FETs and IGBTs (Insulated Gate Bipolar Transistors).
ansistor), IEGT (Injection Enhanced Gate Transis
voltage drive type such as tor) and GTO (Gate Turn-Off
It is well known that there is a current drive type such as Thyristor) and that the voltage drive type can make the gate circuit smaller than the current drive type.

Further, the insulated gate type semiconductor element has been developed due to its wide safe operation area and high switching speed, and the insulated gate type semiconductor element having a high voltage and a large current has also been developed. Due to the characteristics of the insulated gate type semiconductor device, a high voltage and a large current are required.
Increase the parasitic capacitance between the gate-emitter and collector-emitter.

From another point of view, it is also well known that a semiconductor element generates heat due to the loss of the element itself, and therefore an increase in element temperature during use of the element cannot be avoided.

In view of the above, referring to FIGS. 6, 7 and 8, a conventional gate drive circuit for an insulated gate semiconductor element in each arm of a bridge circuit made up of an insulated gate semiconductor element will be described. To do. 6 shows a schematic configuration example of a conventional gate drive circuit for an insulated gate semiconductor device, FIG. 7 shows a schematic configuration example of an insulated gate semiconductor device module driven by the gate drive circuit, and FIG. 1 shows a schematic configuration example of a power conversion device.

The insulated gate semiconductor device 1 driven by the gate drive circuit 9 in FIG. 6 is composed of a collector (C), a gate (G) and an emitter (E), and as shown in FIG. A diode 2 is connected between the collector and the emitter of the insulated gate semiconductor element 1 with the polarity shown in the figure, and an internal gate resistor 3 is connected to the gate of the insulated gate semiconductor element 1.
Are connected to form an insulated gate type semiconductor element module 4. In this case, as the insulated gate semiconductor element module 4, there is one that is composed of a diode 2 and an internal gate resistor 3 and a plurality of insulated gate semiconductor elements 1, but the basic function of each element is the same. Is. Here, as the insulated gate semiconductor element 1, for example, a MOS-FET, an IGBT, an IEGT or the like is used as described above, but here, the IGBT will be used for description.

In FIG. 6, an insulated gate semiconductor device 1 is shown.
Alternatively, the gate drive circuit 9 of the insulated gate semiconductor device module 4 is composed of an on-gate part and an off-gate part. The on-gate unit is configured by connecting an on-gate power supply 5a, which is a control power supply, an on-transistor 6a, an on-gate resistance 7a, and an on-diode 8a, as shown in the figure. In addition, the off-gate section includes an off-gate power supply 5b as a control power supply and an off-transistor 6b.
And an off gate resistor 7b and an off diode 8b are connected as shown in the figure. Here, the emitter of the on transistor 6a and the off transistor 6b
Connected to the emitter of the
By connecting the base of a and the base of the off transistor 6b, the on-gate power supply 5a and the off-gate power supply 5b are connected in a crosswise manner. Also,
The terminal connecting the base of the on transistor 6a and the base of the off transistor 6b is a gate signal input terminal 1
Set to 0.

The operation of the gate drive circuit 9 of the insulated gate semiconductor device is as follows. Gate signal input terminal 10
To turn on the transistor 6a for turning on (for example, +
15V), the on transistor 6a is turned on, and the voltage of the on-gate power supply 5a is turned on.
It is applied between the gate and emitter of the insulated gate semiconductor element 1 through a, the on-gate resistance 7a, and the on-diode 8a. This gate-emitter voltage (hereinafter VG
(E) rises above the gate threshold voltage of the insulated gate semiconductor device 1, the insulated gate semiconductor device 1 becomes conductive, and a main circuit (not shown) connected between the collector and the emitter is connected. Current flows (hereinafter,
Called turn-on). After that, VGE rises to a voltage value by the on-gate power supply 5a after a period of holding a constant voltage (hereinafter referred to as a mirror voltage) determined by the current value. In this case, the mirror voltage is the insulated gate semiconductor device 1
And the temperature of the insulated gate semiconductor element 1 as well. Normally, as the temperature of the insulated gate semiconductor device 1 increases, the mirror voltage decreases.

On the other hand, when a voltage (for example, -15V) for turning on the off transistor 6b is applied to the gate signal input terminal 10, the off transistor 6b is turned on, and the voltage of the off gate power supply 5b is turned off by the off transistor 6b and the off gate. The voltage is applied between the gate and emitter of the insulated gate semiconductor device 1 via the resistor 7b and the off diode 8b.
When this VGE becomes equal to or lower than the gate threshold voltage of the insulated gate semiconductor device 1, the insulated gate semiconductor device 1
Is blocked, and the current through the main circuit (not shown) connected between the collector and the emitter is cut off (hereinafter referred to as turn-off). After that, VGE drops to the voltage value applied by the off-gate power supply 5b after a period of holding the mirror voltage determined by the current value as in the case of turn-on.

As described above, the gate signal input terminal 1
By applying a positive or negative voltage to 0, a positive or negative voltage is applied to the gate of the insulated gate semiconductor element 1, and the insulated gate semiconductor element is ON / OFF controlled.

[0011]

As described above, there is no problem if the positive / negative voltage can be applied to the gate signal input terminal 10 in FIG. 6 to control the on / off of the insulated gate type semiconductor element 1. However, the insulated gate type is not required. The gate-emitter voltage of the insulated gate semiconductor element 1 may increase in the state where the semiconductor element 1 is in the blocking state and −15 V is applied to the gate signal input terminal 10.

In FIG. 8 showing a schematic configuration example of a power converter using a bridge circuit composed of conventional insulated gate semiconductor elements, a plurality (two in the figure) of insulated gate semiconductor elements 1u, 1x are connected in series. The connected series circuit is configured, and 1v, 1y, 1w, and 1z are similarly connected in series to form a series circuit, and these (three in the figure) insulated gate semiconductor element arms are connected in parallel to perform power conversion. The power supply 11 (DC power supply) is connected to the input side of the device and the load 12 is connected to the output side thereof.

In the power converter using the insulated gate semiconductor elements 1u to 1z, on / off control is performed so that the insulated gate semiconductor elements connected in series are not simultaneously turned on. For example, in FIG. 8, a combination such as the insulated gate semiconductor element 1u and the insulated gate semiconductor element 1x prevents a short circuit of the power source 11 caused by the insulated gate semiconductor element 1u and the insulated gate semiconductor element 1x being turned on at the same time. , Insulated gate type semiconductor device 1u
This prevents an excessive current from flowing to the insulated gate semiconductor element 1x and element destruction.

However, for example, when both the insulated gate semiconductor devices 1u and 1x are in the blocking state, when the insulated gate semiconductor device 1u is turned on, the gate-emitter of the insulated gate semiconductor device 1x is turned on. The voltage may rise.

When the insulated gate type semiconductor element 1u is turned on, the collector-emitter voltage of the insulated gate type semiconductor element 1u is turned on to a few volts from the power supply voltage.
Changes to (voltage value when conducting). At this time, in the insulated gate semiconductor device 1x in the blocking state, the collector-emitter voltage changes from several V to the power supply voltage. For this reason,
Since the current for charging the capacitor flows into the insulated gate semiconductor element 1x (in the blocking state, the same operation as the capacitor occurs due to the parasitic capacitance), the current for charging also flows into the parasitic capacitance between the gate and the emitter, The gate-emitter voltage of the insulated gate semiconductor device 1x is increased.

Further, when the flow of this current is large, the rising voltage becomes high, and when it reaches the gate threshold voltage, it is turned on to the conductive state, and the above-mentioned short circuit of the power supply 11 is likely to occur.

Further, since the semiconductor element generates heat due to the loss of the element itself, an increase in the element temperature during use of the element cannot be avoided. The gate threshold voltage is affected by the temperature rise of the element and generally lowers as the temperature rises.

Therefore, when one of the insulated gate type semiconductor elements forming the upper and lower arms is turned on while the element temperature is increased, the gate-emitter voltage of the other insulated gate type semiconductor element is lowered due to the temperature rise. The gate threshold voltage is easily reached, and the possibility that the power supply 11 is short-circuited becomes extremely high. Here, the insulated gate semiconductor devices 1u and 1x have been described, but 1v and 1y,
The same applies to 1w and 1z.

In view of the above problems, an object of the present invention is to provide a highly reliable gate drive circuit for an insulated gate type semiconductor device capable of preventing a power supply short circuit even when the device temperature rises, an insulated gate semiconductor module and a power source. It is to provide a conversion device.

[0020]

In order to achieve the above object, the present invention according to claim 1 provides a gate drive circuit for an insulated gate semiconductor device, wherein the device temperature of the gate semiconductor device is increased. The gist of the present invention is to provide means for applying a bias to the gate voltage output.

According to the first aspect of the invention, the output voltage of the gate drive circuit is biased and adjusted so as to compensate for the decrease in the gate threshold voltage of the insulated gate semiconductor device due to the increase in device temperature. Thus, for example, even if the gate-emitter voltage of the insulated gate semiconductor element rises due to the turn-on of the insulated gate semiconductor element forming the upper and lower arms, a short circuit of the power supply connected to the upper and lower arms can be prevented. it can.

According to a second aspect of the present invention, in a gate drive circuit for an insulated gate type semiconductor element, a temperature detection means for detecting an element temperature of the insulated gate type semiconductor element is provided, and a resistance is detected according to the element temperature. A voltage source is divided by a variable resistor whose value changes and a fixed resistor, and a power source for increasing a negative bias of a gate voltage output by a resistance change of the variable resistor accompanying a temperature rise of the insulated gate semiconductor element is provided. To do.

According to the second aspect of the present invention, the off-gate power supply voltage-divided by the variable resistance and the resistance due to the element temperature rise becomes the negative side voltage output of the gate drive circuit,
The output voltage of the gate drive circuit can be reduced by using a variable resistor whose resistance value changes as the element temperature rises, and the equivalent reduction in the gate threshold voltage of the insulated gate semiconductor element due to the temperature rise can be achieved. Can be prevented. Even if the gate-emitter voltage of the insulated gate type semiconductor device rises due to the turn-on of the insulated gate type semiconductor device that constitutes the upper and lower arms, the output of the gate drive circuit responds to the decrease of the threshold voltage due to the temperature rise. A negative bias can be applied to the voltage, and it becomes possible to prevent a short circuit of the power supply connected to the upper and lower arms.

According to a third aspect of the present invention, in the invention according to the second aspect, the temperature detecting means for detecting the temperature of the insulated gate semiconductor element is a diode which also serves as a variable resistance.

According to the third aspect of the present invention, a voltage obtained by dividing the off-gate power supply by the temperature detecting diode and the resistor becomes the negative side voltage output of the gate mining circuit, and the temperature detecting diode of the temperature detecting diode rises due to the rise of the element temperature. By lowering the voltage, the output voltage of the gate drive circuit can be lowered,
It is possible to prevent the gate threshold voltage of the insulated gate semiconductor device from lowering due to temperature rise at the equivalent time. Even if the gate-emitter voltage of the insulated gate type semiconductor device rises due to the turn-on of the insulated gate type semiconductor device that constitutes the upper and lower arms, the output of the gate drive circuit responds to the decrease of the threshold voltage due to the temperature rise. A negative bias can be applied to the voltage, and it becomes possible to prevent a short circuit of the power supply connected to the upper and lower arms.

According to a fourth aspect of the present invention, at least one module includes the gate drive circuit according to any one of the first to third aspects together with an insulated gate semiconductor element driven by the gate drive circuit. That is the summary.

In the invention described in claim 4, the first
Through the inclusion of the gate drive circuit for the insulated gate semiconductor device of the third embodiment, it is possible to prevent the gate threshold voltage of the insulated gate semiconductor device from lowering due to temperature rise at the equivalent time. Even if the gate-emitter voltage of the insulated gate semiconductor device rises due to the turn-on of the insulated gate semiconductor device that constitutes the upper and lower arms, the output voltage of the gate drive circuit changes depending on the decrease in the threshold voltage due to the temperature rise. Negative bias can be applied to prevent short circuit of the power supply connected to the upper and lower arms. Also,
By incorporating a mechanism for lowering the output voltage of the gate drive circuit in the module, it is possible to detect the temperature in the immediate vicinity of the element, so that the reliability can be further improved.

According to a fifth aspect of the present invention, at least one of the gate drive circuits according to the first to third aspects and the insulated gate type semiconductor device module according to the fourth aspect is used in a power converter. To do.

In the invention described in claim 5, the first
Through the use of the gate drive circuit for the insulated gate semiconductor device of the third embodiment and the insulated gate semiconductor module of the fourth embodiment, the gate threshold voltage of the insulated gate semiconductor device can be prevented from lowering due to temperature rise. This can be prevented at the equivalent time and the short circuit of the power supply can be prevented. Further, the reliability of the power conversion device can be further improved by using the insulated gate semiconductor element having the temperature detecting means for reducing the output voltage of the gate drive circuit.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) FIG. 1 shows a schematic configuration example of a gate drive circuit for an insulated gate semiconductor element according to the first embodiment, where 1 is an insulated gate semiconductor element and 4 is an insulated gate type. A semiconductor element module 9 is a gate drive circuit for driving the insulated gate semiconductor element 1, and the same parts as those in FIG. 6 are designated by the same reference numerals.

As shown in FIG. 1, the gate drive circuit 9 of the insulated gate semiconductor device 1 according to the present embodiment includes a temperature detection means 5 for the insulated gate semiconductor device 1 in the gate drive circuit 9.
By including 0, the device temperature rise of the insulated gate semiconductor device 1 is detected and the output voltage of the gate drive circuit 9 is lowered by the detected temperature rise. That is, in the gate range circuit 9 of the insulated gate semiconductor device 1, the decrease in the gate threshold voltage of the insulated gate semiconductor device 1 corresponding to the rise in the device temperature detected by the temperature detecting means 50 is taken into consideration. The bias voltage is adjusted so as to decrease the output voltage of the gate drive circuit 9.

Therefore, by applying the structure of the present embodiment to the insulated gate type semiconductor element which constitutes the upper and lower arms of the power converter having the bridge structure, the arm is turned on by turning on one of the insulated gate type semiconductor elements of the arm. Even if the gate-emitter voltage of the other insulated gate semiconductor device 1 rises, a bias can be applied to the output voltage of the gate drive circuit 9 according to the decrease in the threshold voltage due to the temperature rise, and the upper and lower arms can be provided. A short circuit of the connected power supply can be prevented.

(Second Embodiment) FIG. 2 shows a schematic configuration example of a gate drive circuit for an insulated gate semiconductor device according to the second embodiment. In the on-gate portion of the gate drive circuit 9, an on-gate power supply 5a is provided. , The on transistor 6a,
Has an ON gate resistance 7a and an ON diode 8a,
The off-gate section has an off-gate power supply 5b, an off-transistor 6b, an off-gate resistance 7b, and an off-diode 8b, and the same parts as those in FIG.

The gate drive circuit 9 for the insulated gate semiconductor device according to the present embodiment is detected by the temperature detecting means 50 of the insulated gate semiconductor device 1 in the gate drive circuit 9 as shown in FIG. A series body of a variable resistor 13 and a fixed resistor 14 whose resistance value changes due to temperature rise is connected in parallel to the off-gate power supply 5b, and the collector of the off transistor 6b is connected to the connection point between the variable resistor 13 and the resistor 14. It will be configured. That is, in the gate drive circuit 9 of the insulated gate semiconductor device 1 according to the present embodiment,
A variable resistance whose voltage value is divided into a variable resistor 13 and a fixed resistor 14 that change the power supply voltage of the off-gate power supply 5b due to a rise in the element temperature becomes a negative voltage output of the gate drive circuit 9, and the resistance value changes according to a rise in the element temperature. By using 13, it is possible to reduce the output voltage of the gate drive circuit 9,
It is possible to equivalently prevent a decrease in the gate threshold voltage of the insulated gate semiconductor device 1 due to a temperature rise.

As described above, even if the gate-emitter voltage of the other insulated gate type semiconductor element 1 increases due to the turn-on of one insulated gate type semiconductor element 1 forming the upper and lower arms (not shown), the temperature rises. A negative bias can be applied to the output voltage of the gate drive circuit 9 according to the decrease in the threshold voltage, and it is possible to prevent a short circuit of the power supply connected to the upper and lower arms (not shown).
It becomes possible by using 4.

(Third Embodiment) FIG. 3 shows a schematic groove formation example of a gate drive circuit for an insulated gate semiconductor device according to the present embodiment. The same parts as those in FIG. Are omitted and only different parts will be described here.

That is, the gate drive circuit 9 of the insulated gate semiconductor device according to this embodiment is the same as the gate drive circuit 9 shown in FIG.
As the temperature detecting means of the insulated gate semiconductor element 1 connected to the temperature detecting diode 15, a temperature detecting diode 15 is connected with the polarity shown in the figure. In the gate drive circuit 9 of the insulated gate semiconductor element, the voltage obtained by dividing the off-gate power supply into the temperature detection diode 15 that replaces the variable resistance and the fixed resistance 14 becomes the negative voltage output of the gate drive circuit 9, and the element temperature By using the temperature detection diode 15 whose shared voltage changes due to the rise in temperature, the output voltage of the gate drive circuit 9 can be lowered, and the insulated gate semiconductor device 1 due to the rise in temperature can be reduced.
It is possible to equivalently prevent the decrease of the gate threshold voltage.

As described above, even if the gate-emitter voltage of the other insulated gate type semiconductor element 1 increases due to the turn-on of one insulated gate type semiconductor element forming the upper and lower arms (not shown), the threshold value increases due to the temperature rise. A negative bias can be applied to the output voltage of the gate drive circuit 9 according to the voltage drop, and the diode 15 can be used to prevent a short circuit of the power supply connected to the upper and lower arms (not shown).

Further, in the circuit configuration similar to this circuit, temperature detecting means is provided in the gate drive circuit 9 of the insulated gate semiconductor element instead of the diode, and the temperature detection means in the gate drive circuit 9 of the insulated gate semiconductor element is detected. The same effect can be obtained by bringing the means into close contact with the insulated gate semiconductor element 1.

(Fourth Embodiment) FIG. 4 shows a schematic configuration example of a power converter using a gate drive circuit for an insulated gate semiconductor device according to a fourth embodiment, 1u, 1x, 1v, and 1.
y, 1w and 1z are insulated gate type semiconductor devices constituting upper and lower arms, 2u, 2v, 2w, 2x, 2y, 2z are diodes, 4u, 4v, 4w, 4x, 4y, 4z are insulated gate type semiconductors, respectively. Element module, 9u, 9v, 9
w, 9x, 9y, 9z are gate drive circuits, 11 is a power supply, 12
Is a load, and the same portions as those in FIGS. 6 and 8 are denoted by the same reference numerals.

In FIG. 4, the insulated gate type semiconductor module 16 according to the fourth embodiment incorporates an insulated gate type semiconductor element which constitutes a power converter and a gate drive circuit thereof. That is, the insulated gate semiconductor module 16
In the inside, the gate drive circuits 9u to 9z have at least one (6 in the figure) temperature detecting hand throw 50 as shown in FIG. 1 or FIG.
-1z at least one (6 in the figure) element temperature rise is detected, and a mechanism for lowering the output voltage of the gate drive circuits 9u to 9z is incorporated by the detected temperature rise. In this insulated gate semiconductor module 16, the first
Also, by using the gate drive circuit for the insulated gate semiconductor device of the second embodiment, it is possible to equivalently prevent a decrease in the gate threshold voltage of the insulated gate semiconductor devices 1u to 1z due to temperature rise.

As described above, in the insulated gate semiconductor module according to the present embodiment, the gate-emitter voltage of the other insulated gate semiconductor element 1 rises when one of the insulated gate semiconductor elements forming the upper and lower arms is turned on. Even if there is, a negative bias can be applied to the output voltage of the gate drive circuit according to the decrease of the threshold voltage due to the temperature rise, and it is possible to prevent short circuit of the power supply connected to the upper and lower arms. A gate type semiconductor module can be obtained. By incorporating a mechanism for lowering the output voltage of the gate drive circuit in the module, the temperature in the immediate vicinity of the element can be detected, so that the reliability can be further improved.

(Fifth Embodiment) FIG. 5 shows a schematic configuration example of a power converter using a gate drive circuit for an insulated gate semiconductor device according to the present embodiment. The same parts as those in FIG. The description is omitted.

In FIG. 5, in the power converter according to the fifth embodiment, at least one temperature detecting means (six in the figure) is used in the gate driving circuit of the insulated gate semiconductor element, so that the insulated gate semiconductor element is provided. Of the insulated gate type semiconductor device having a mechanism for detecting the temperature rise of the element and reducing the output voltage of the gate drive circuit by the detected temperature rise. That is, in the power converter using the gate drive circuit for the insulated gate semiconductor device according to the present embodiment, the gate drive circuit for the insulated gate semiconductor device according to the first and second embodiments and the insulated gate type for the fourth embodiment are provided. By using a semiconductor module,
It is possible to equivalently prevent a decrease in the gate threshold voltage of the insulated gate semiconductor devices 1u to 1z due to a temperature rise. The reliability of the power conversion device can be further improved by using the insulated gate semiconductor element having the temperature detection means 50u to 50z for reducing the output voltage of the gate drive circuit.

As described above, by using the gate drive circuits for the insulated gate type semiconductor devices of the first and second embodiments and the insulated gate type semiconductor module of the fourth embodiment, it is possible to prevent power supply short circuit even when the device temperature rises. It is possible to obtain a power converter having excellent properties.

In the description of FIGS. 4 and 5, FIGS.
Although the temperature detecting means described above has been described, the temperature detecting means using a diode shown in FIG. 3 can also be used.

As the insulated gate semiconductor device,
For example, even with a MOS-FET, IGBT, IEGT, or other voltage gate drive element, the same effect can be obtained in any of the first to fifth embodiments.

[0049]

As described above, according to the present invention, there is provided a gate drive circuit, a module, and a power conversion device for an insulated gate semiconductor element which is capable of preventing a power source short circuit even when the element temperature rises and which is excellent in reliability. can do.

[Brief description of drawings]

FIG. 1 is a circuit diagram showing an example of the essential configuration of a gate drive circuit for an insulated gate semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a schematic configuration example of a gate drive circuit for an insulated gate semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a circuit diagram showing a schematic configuration example of a gate drive circuit for an insulated gate semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a circuit diagram showing a schematic configuration example of an insulated gate semiconductor module incorporating a gate drive circuit for an insulated gate semiconductor element according to a fourth embodiment of the present invention.

FIG. 5 is a circuit diagram showing a schematic configuration example of a power conversion device using a gate drive circuit for an insulated gate semiconductor element according to a fifth embodiment of the present invention.

FIG. 6 is a circuit diagram showing a schematic configuration example of a gate drive circuit for a conventional insulated gate semiconductor device.

FIG. 7 is a circuit diagram showing a schematic configuration example of an insulated gate semiconductor element module.

FIG. 8 is a circuit diagram showing an example of the horizontal alignment of a power conversion device using a conventional insulated gate semiconductor element.

[Explanation of symbols]

1, 1u, 1v, 1w, 1x, 1y, 1z: Insulated gate type semiconductor device 2, 2u, 2v, 2w, 2x, 2y, 2z: Diode 4, 4u, 4v, 4w, 4x, 4y, 4z: Insulated gate Type semiconductor element module 5a: ON gate power supply 5b: OFF gate power supply 6a: ON transistor 6b: OFF transistor 7a: ON gate resistance 7b: OFF gate resistance 8a: ON diode 8b: OFF diode 9, 9u, 9v, 9w, 9x, 9y, 9z: Gate drive circuit 10: Gate signal input terminal 11: Power supply 12: Load 13: Variable resistance 14: Fixed resistance 15: Temperature detection diode 16: Insulated gate type semiconductor module 50, 50u, 50v, 50w , 50x, 50y, 50z:
Temperature detection means

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Claims (5)

[Claims] 1. A gate drive circuit for an insulated gate semiconductor device, comprising: a means for applying a bias to a gate voltage output when the device temperature of the gate semiconductor device rises. 2. A gate drive circuit for an insulated gate semiconductor device, comprising temperature detecting means for detecting a device temperature of the insulated gate semiconductor device, and a variable resistor whose resistance value changes according to the device temperature and a fixed resistor. A gate drive circuit comprising: a power supply which is divided by a resistance and which increases a negative bias of a gate voltage output by a resistance change of the variable resistance due to a temperature rise of the insulated gate semiconductor element. 3. The gate drive circuit for an insulated gate semiconductor element according to claim 2, wherein the temperature detecting means for detecting the temperature of the insulated gate semiconductor element is a diode which also serves as a variable resistor. Drive circuit. 4. An insulated gate semiconductor module comprising at least one gate drive circuit according to claim 1 and an insulated gate semiconductor element driven by the gate drive circuit. 5. An electric power dust converting apparatus comprising at least one of the gate drive circuit according to claim 1 and the insulated gate semiconductor module according to claim 4.