JP2002094363A - Gate drive circuit for insulation gate type semiconductor element, the insulation gate type semiconductor element and power converter using them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gate drive circuit for an insulation gate type semiconductor element that can suppress transient turning-on due to a rapid voltage rise in a block state, without having to increase turn-on loss of the insulation gate type semiconductor element. SOLUTION: The gate drive circuit is provided with bipolar control power supplies 5a, 5b one terminal of which is connected to an emitter of the insulation gate type semiconductor element 1, on/off diodes 7a, 7b connected in anti-parallel with the other terminals of the control power supplies, on-gate and off-gate resistors 8a, 8b respectively connected between the on/off diodes 7a, 7b and the gate of the insulation gate type semiconductor element 1, and a series circuit, consisting of a diode 11 and a capacitor 10, that is connected between the gate and the emitter of the insulation gate type semiconductor element 1. The anode of the diode 11 of the series circuit is connected to the gate of the insulation gate type semiconductor element 1, one terminal of the capacitor 10 of the series circuit is connected to the emitter of the insulation gate type semiconductor element 1, and the diode 11 and the capacitor 10 of the series circuit and the on-diode 7a and the on-gate resistor 8a are connected directly respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gate drive circuit for an insulated gate semiconductor device, an insulated gate semiconductor device and a power converter using the same, and more particularly to an increase in turn-on loss of the insulated gate semiconductor device. Not
The present invention relates to a gate drive circuit of an insulated gate semiconductor device, an insulated gate semiconductor device, and a power converter using the same, which can suppress a transient turn-on due to a sharp voltage rise in a blocking state.

[0002]

2. Description of the Related Art Conventionally, insulated gate type semiconductor devices such as MOS-FET, IGBT, IEGT (Injection
The Enhanced Gate Transistor) is a voltage-driven type, and can make the gate circuit smaller than a current-driven type such as GTO.

[0003] Further, development has been promoted because of a wide safe operation area and a high switching speed, and an insulated gate semiconductor device having a high voltage and a large current has been developed.

[0004] The increase in the voltage and the current of the insulated gate semiconductor device increases the parasitic capacitance between the gate and the collector, between the gate and the emitter, and between the collector and the emitter.

Hereinafter, a gate drive circuit for an insulated gate type semiconductor device in this kind of insulated gate type semiconductor arm will be described.

FIG. 6 is a circuit diagram showing a schematic configuration example of a conventional gate drive circuit of an insulated gate semiconductor device.

In FIG. 6, an insulated gate semiconductor device 1
Is composed of a collector, a gate, and an emitter. Hereinafter, these are denoted as C, G, and E, respectively.

A diode 2 is connected between the collector and the emitter of the insulated gate semiconductor device 1 with the polarity shown in the figure, and an individual gate resistor 3 is connected to the emitter of the insulated gate semiconductor device 1 to form an insulated gate. A type semiconductor module 4 is configured.

Here, as the insulated gate semiconductor element 1, for example, a MOS-FET, an IGBT, an IEGT, or the like is used. Here, the IGBT will be described.

The insulated gate type semiconductor element module 4 includes a plurality of insulated gate type semiconductor elements 1, a diode 2 and an individual gate resistor 3, but these are shown in simplified form. .

On the other hand, the gate drive circuit 9 includes an on-gate section and an off-gate section.

The on-gate section is constituted by connecting an on-gate power supply 5a, which is a control power supply, an on-switch 6a, an on-diode 7a, and an on-gate resistor 8a as shown in the figure.

The off-gate section is constituted by connecting an off-gate power supply 5b as a control power supply, an off-switch 6b, an off-diode 7b, and an off-gate resistor 8b as shown in the figure.

The ON switch 6a and the OFF switch 6b are controlled such that when one of them is turned on, the other is always turned off.

The gate drive circuit 9 having such a configuration
Is connected between the emitter of the insulated gate semiconductor device 1 and the individual gate resistor 3 via a capacitor 10 as shown in the figure.

The operation of the gate drive circuit 9 of the insulated gate semiconductor device described above is as follows.

That is, when the ON switch 6a is turned ON (ON command), the ON gate power supply 5a (for example, +15)
V) is an on-diode 7a, an on-gate resistor 8a,
The voltage is applied to the gate-emitter VGE of the insulated gate semiconductor device 1 via the individual gate resistor 3.

When the gate-emitter VGE rises and becomes equal to or higher than the gate threshold voltage of the insulated gate semiconductor device 1, the insulated gate semiconductor device 1 is turned on and the connection between the collector and the emitter is established. A current flows through the main circuit (not shown) as shown (hereinafter referred to as turn-on).

The turn-on time is determined by the product of the resistance components of the individual gate resistor 3, the on-gate resistor 8a and the off-gate resistor 8b, and the capacitance component of the gate-emitter capacitance of the insulated gate semiconductor device 1.

The turn-on time becomes longer as the resistance component and the capacitance component are larger.

When the off switch 6b is turned on (off command) while the insulated gate semiconductor device 1 is in a conductive state, the off gate power supply 5b (for example, -15V) turns off the diode 7b, off gate resistor 8b, and so on. The voltage is applied to the gate-emitter VGE of the insulated gate semiconductor device 1 via the individual gate resistor 3.

Then, the gate-emitter VGE becomes equal to or lower than the gate threshold voltage, the insulated gate semiconductor element 1 enters a blocking state, and a current flows through a main circuit (not shown) connected between the collector and the emitter. (Hereinafter referred to as turn-off).

Note that, like the turn-on time, the turn-off time is determined by the product of the resistance component and the capacitance component.

As described above, the positive and negative voltages are supplied to the gate of the insulated gate semiconductor device 1 to perform on / off control.

On the other hand, the capacitor 10 is inserted between the emitter of the insulated gate semiconductor device 1 and the individual gate resistor 3 for the following reason.

That is, when the insulated gate semiconductor device 1 is in the blocking state and the voltage of the insulated gate semiconductor device 1 sharply increases at the timing when another arm connected in series is turned on, the insulated gate semiconductor device 1 The element 1 may be turned on transiently and a current may flow.

In particular, since the insulated gate semiconductor device 1 is increased in voltage, the parasitic capacitance (particularly, the collector-gate capacitance) of the insulated gate semiconductor device 1 is increased. A large current flows into the gate of the insulated gate semiconductor device 1.

Such a phenomenon increases the turn-on loss of the insulated gate semiconductor device 1.

Therefore, in order to suppress such a phenomenon, as shown in FIG. 6, a capacitor 10 is inserted between the emitter of the insulated gate semiconductor device 1 and the individual gate resistor 3.

That is, when the capacitor 10 is present, the gate current is reduced even when the voltage rises abruptly when the insulated gate semiconductor device 1 is in the blocking state.
Since it can be bypassed to zero, transient turn-on of the insulated gate semiconductor device 1 can be suppressed.

[0031]

However, by inserting such a capacitor 10, the capacitance between the gate and the emitter of the insulated gate semiconductor device 1 increases, the turn-on time increases, and the turn-on loss also increases. become.

An object of the present invention is to provide an excellent insulated gate semiconductor device capable of suppressing a transient turn-on due to a rapid voltage increase in a blocking state without increasing the turn-on loss of the insulated gate semiconductor device. A gate drive circuit, an insulated gate semiconductor element, and a power conversion device using the same.

[0033]

According to a first aspect of the present invention, there is provided an insulated gate type semiconductor device in which positive and negative voltages are supplied to a gate of an insulated gate type semiconductor element to control on / off. In the gate drive circuit of the element, one terminal is connected to the positive / negative control power supply connected to the emitter of the insulated gate semiconductor element, and the other terminal of the control power supply is connected to the other terminal of the control power supply by an on-diode and an off-diode. An on-gate resistance and an off-gate resistance respectively connected between the on-diode and the off-diode and the gate of the insulated gate semiconductor element,
A series circuit of a diode and a capacitor connected between the gate and the emitter of the insulated gate semiconductor element, wherein the anode of the diode of the series circuit is connected to the gate of the insulated gate semiconductor element, and a capacitor of the series circuit is provided. Is connected to the emitter of the insulated gate semiconductor element, and short-circuits between the diode and the capacitor of the series circuit and between the on-diode and the on-gate resistor.

Therefore, in the gate drive circuit of the insulated gate semiconductor device according to the first aspect of the present invention, the short circuit between the diode and the capacitor and the turn-on diode and the on-gate resistance of the series circuit is performed. Accordingly, the capacitor can be charged quickly when the insulated gate semiconductor device is turned on, and an increase in the turn-on loss of the insulated gate semiconductor device can be suppressed.

According to a second aspect of the present invention, in the gate drive circuit of an insulated gate semiconductor device according to the first aspect of the present invention, between the diode and the capacitor of the series circuit, and between the on-state diode and the on-gate. The resistor and the resistor are short-circuited via the resistor.

Therefore, in the gate drive circuit for an insulated gate semiconductor device according to the present invention, the resistance between the diode and the capacitor of the series circuit and the resistance between the on-diode and the on-gate resistance is established. By using such a short circuit, the peak value of the current flowing when charging the capacitor can be limited, and the reliability of the capacitor can be improved.

Further, in the invention corresponding to claim 3, in the gate drive circuit of the insulated gate type semiconductor element which controls on / off by supplying positive and negative voltages to the gate of the insulated gate type semiconductor element, one terminal is an insulated gate. A positive / negative control power supply connected to the emitter of the semiconductor device, a series circuit of an on-diode and an off-diode, an on-gate resistance and an off-gate resistance, connected in antiparallel to the other terminal of the control power supply, and a series circuit And a circuit board configured between the gate of the insulated gate semiconductor element and the circuit board, wherein the circuit board has a diode and a common circuit between the series circuit and the gate of the insulated gate semiconductor element such that the series circuit side is a cathode. Connect the gate resistors in parallel with each other,
A capacitor is connected between the cathode and the emitter of the insulated gate semiconductor device.

Therefore, in the gate drive circuit of the insulated gate semiconductor device according to the third aspect of the present invention, the diode and the diode are connected between the series circuit and the gate of the insulated gate semiconductor device such that the series circuit side is a cathode. By connecting a common gate resistor in parallel with each other and providing a circuit board configured by connecting a capacitor between the cathode and the emitter of the insulated gate semiconductor device, the capacitor is connected when the insulated gate semiconductor device is turned on. The battery can be charged quickly, the number of wirings from the gate drive circuit can be reduced to two, and the gate wiring can be simplified.

On the other hand, in a fourth aspect of the present invention, the circuit board of the third aspect of the present invention is formed in an insulated gate semiconductor module.

Therefore, in the insulated gate semiconductor device of the invention corresponding to claim 4, the circuit board having the above structure is
By incorporating it in an insulated gate semiconductor module,
A resonance phenomenon between stray inductance and capacitance between a gate and an emitter of a capacitor and an insulated gate semiconductor element can be suppressed.

According to a fifth aspect of the present invention, there is provided a power conversion device such as an inverter or a converter configured to include a plurality of insulated gate semiconductor elements and performing power conversion. The gate drive circuit of the insulated gate semiconductor device according to any one of the aspects of the invention is connected as a gate drive circuit of the insulated gate semiconductor device.

Therefore, in the power converter of the invention according to claim 5, by using the gate drive circuit of the insulated gate semiconductor element having the above structure as the gate drive circuit of the insulated gate semiconductor element, It is possible to obtain an excellent power conversion device capable of suppressing a transient turn-on due to a rapid voltage increase in a blocking state without increasing a turn-on loss of a semiconductor element.

According to a sixth aspect of the present invention, there is provided a power conversion apparatus such as an inverter or a converter which includes a plurality of insulated gate semiconductor elements and performs power conversion. Is provided as an insulated gate semiconductor element.

Therefore, in the power converter of the invention according to claim 6, by using the insulated gate semiconductor element having the above structure as an insulated gate semiconductor element,
It is possible to obtain an excellent power conversion device capable of suppressing a transient turn-on due to a rapid voltage rise in a blocking state without increasing a turn-on loss of an insulated gate semiconductor element.

[0045]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment) FIG. 1 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to the present embodiment. The same parts as those in FIG. The description is omitted here, and only different parts will be described here.

That is, the gate drive circuit of the insulated gate semiconductor device according to the present embodiment, as shown in FIG.
A capacitor 10 inserted between the emitter of the insulated gate semiconductor device 1 and the individual gate resistor 3 in FIG.
And a connection point between the capacitor 10 and the diode 11 is connected to a connection point between the ON diode 7a and the ON gate resistor 8a.

That is, the anode of the diode 11 is
Connected to the individual gate resistor 3, one terminal of the capacitor 10 is connected to the emitter of the insulated gate semiconductor device 1,
The configuration is such that the connection between the diode 11 and the capacitor 10 and the connection between the ON diode 7a and the ON gate resistor 8a are directly connected and short-circuited.

Next, in the gate drive circuit 9 of the insulated gate type semiconductor device according to the present embodiment configured as described above, the connection between the diode 11 and the capacitor 10 and the connection between the on-state diode 7a and the on-gate resistor 8a. Between
When the insulated gate semiconductor device 1 is turned on, the capacitor 10 is not charged via the on-gate resistor 8a when the insulated gate semiconductor device 1 is turned on. The capacitance between one gate and emitter can be charged independently of the capacitor 10 via the on-gate resistor 8a.

Further, even when the voltage rises abruptly when the insulated gate semiconductor device 1 is in the blocking state, the gate current can be bypassed to the capacitor 10 via the diode 11.

As described above, the turn-on of the insulated gate semiconductor device 1 is similar to the case where the capacitor 10 is not inserted, and the turn-on loss does not increase.

Further, in the blocking state of the insulated gate semiconductor element 1, the capacitor 10 is inserted, so that the transient turn-on of the insulated gate semiconductor element 1 can be suppressed.

As described above, in the gate drive circuit for an insulated gate semiconductor device according to the present embodiment, a transient voltage rise due to a sharp voltage increase in the blocking state does not increase the turn-on loss of the insulated gate semiconductor device 1. Turn-on can be suppressed.

(Second Embodiment) FIG. 2 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to the present embodiment. The description is omitted here, and only different parts will be described here.

That is, the gate drive circuit of the insulated gate semiconductor device according to the present embodiment has a structure as shown in FIG.
A resistor 12 is inserted between the cathode of the diode 7a for turning on and the cathode of the diode 11 in FIG.

That is, the anode of the diode 11 is
Connected to the individual gate resistor 3, one terminal of the capacitor 10 is connected to the emitter of the insulated gate semiconductor device 1,
A resistor 12 is connected between the diode 11 and the capacitor 10 and between the on diode 7a and the on-gate resistor 8a.
And short-circuited.

Next, in the gate drive circuit 9 of the insulated gate type semiconductor device according to the present embodiment configured as described above, the connection between the diode 11 and the capacitor 10 and the connection between the on-state diode 7a and the on-gate resistor 8a. Between
Since the capacitor 10 is charged via the resistor 12 when the insulated gate semiconductor device 1 is turned on by short-circuiting using the resistor 12, the peak value of the charging current can be limited. Reliability can be improved.

As described above, in the gate drive circuit of the insulated gate semiconductor device according to the present embodiment, the peak value of the charging current of
Can be improved in reliability.

(Third Embodiment) FIG. 3 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to the present embodiment. The same reference numerals as in FIG. 6 denote the same parts. The description is omitted here, and only different parts will be described here.

That is, the gate drive circuit of the insulated gate semiconductor device according to the present embodiment has a structure as shown in FIG.
A capacitor 10 inserted between the emitter of the insulated gate semiconductor device 1 and the individual gate resistor 3 in FIG.
And a parallel circuit of a diode 11 and a common gate resistor 13 connected in series.

Here, the capacitor 10 and the diode 1
1. A circuit board 14 is composed of the common gate resistor 13.

That is, the circuit board 14 is connected between a series circuit of the on-diode 7a and the off-diode 7b and the on-gate resistor 8a and the off-gate resistor 8b connected in anti-parallel, and the gate of the insulated gate semiconductor device 1. The circuit board 14 further includes a diode 11 and a common gate resistor 13 connected in parallel with each other so that the series circuit side serves as a cathode, and a capacitor 10 connected between the cathode and the emitter of the insulated gate semiconductor device 1. Are connected.

Here, it is necessary to consider the following relationship as the on-gate resistance 8a, the off-gate resistance 8b and the common gate resistance 13.

(Gate resistance when on) = (On gate resistance 8a) + (Common gate resistance 13) (Gate resistance when off) = (Off gate resistance 8b) +
(Common Gate Resistance 13) In some cases, the on-gate resistance 8a or the off-gate resistance 8b is not used.

Next, in the gate drive circuit 9 of the insulated gate type semiconductor device according to the present embodiment configured as described above, the series circuit side has a cathode between the series circuit and the gate of the insulated gate type semiconductor device 1. The diode 11 and the common gate resistor 13 are connected in parallel with each other so that the capacitor 10 is connected between the cathode and the emitter of the insulated gate semiconductor device 1. Thereby, when the insulated gate semiconductor element 1 is turned on, the capacitor 10 is charged only through the on-gate resistor 8a, so that the charge can be performed quickly and the number of wires from the gate drive circuit 9 can be reduced to two. In addition, the gate wiring can be simplified.

As described above, in the gate drive circuit of the insulated gate semiconductor device according to the present embodiment, the charge of the capacitor 10 can be accelerated, and the number of wires from the gate drive circuit 9 can be reduced to two. As a result, the gate wiring can be simplified.

(Fourth Embodiment) FIG. 4 is a circuit diagram showing a schematic configuration example of an insulated gate semiconductor device according to the present embodiment. The same parts as those in FIG. The description will be omitted, and only different portions will be described here.

In FIG. 4, a plurality (x in the figure) of insulated gate semiconductor devices 1a to 1x are connected in parallel with each other, and between each of the insulated gate semiconductor devices 1a to 1x, The diodes 2a to 2x are connected with the polarity shown in the figure, and the insulated gate semiconductor elements 1a to
The individual gate resistors 3a to 3x are respectively connected to the 1x emitters to form the insulated gate semiconductor module 4.

Further, a circuit board 14 composed of the capacitor 10, the diode 11, and the common gate resistor 13
In the insulated gate semiconductor module 4 (built-in)
are doing.

Next, in the insulated gate semiconductor device according to the present embodiment configured as described above, the circuit board 14 including the capacitor 10, the diode 11, and the common gate resistor 13 is connected to the insulated gate semiconductor module 4.
, The capacitor 10 can be arranged in the insulated gate semiconductor module 4, and the stray inductance can be reduced.

Further, it is possible to suppress the resonance phenomenon between the stray inductance and the capacitance between the capacitor 10 and the gate-emitter of the insulated gate semiconductor elements 1a to 1x.

As described above, in the gate drive circuit of the insulated gate semiconductor device according to the present embodiment, the stray inductance can be reduced, and the stray inductance, the capacitor, and the insulated gate semiconductor devices 1a to 1x can be reduced. Can be suppressed from resonance with the capacitance between the gate and the emitter.

(Fifth Embodiment) FIG. 5 is a circuit diagram showing a schematic configuration example of a power conversion device using a gate drive circuit of an insulated gate semiconductor device according to the present embodiment. The same parts as in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted. Here, only different parts will be described.

In FIG. 4, a plurality (two in the figure) of insulated gate semiconductor modules 4a and 4c are connected in parallel with each other, and a plurality (two in the figure) of insulated gate semiconductor modules 4b and 4d are connected to each other. The two parallel circuits are connected in parallel, and these two parallel circuits are connected in series with each other to form an insulated gate semiconductor arm.
C power supply) 16 and a load 15 on the output side.

Further, one gate drive circuit 9a, 9b, 9c, 9d is individually provided for each of the insulated gate semiconductor modules 4a, 4b, 4c, 4d.

Here, each of the insulated gate semiconductor modules 4a, 4b, 4c, 4d has the same configuration as that of the insulated gate semiconductor module 4 of FIGS. 1 and 2, and each of the gate drive circuits 9a, 9b , 9c and 9d are also shown in FIG.
Alternatively, it has a configuration similar to that of the gate drive circuit 9 of the first or second embodiment shown in FIG. 2, and includes each of the insulated gate semiconductor modules 4a, 4b, 4c, 4d and each gate drive circuit 9a. , 9b, 9c, and 9d, as shown in FIG.
Or, similarly to FIG. 2, they are connected via a capacitor 10 and a diode 11, respectively.

As described above, a power conversion device such as an inverter or a converter that performs power conversion is configured.

The same elements as those in FIGS. 1 and 2 are denoted by different subscripts a, b, c, and d.

Next, in the power converter using the gate drive circuit of the insulated gate semiconductor device according to the present embodiment configured as described above, the insulated gate semiconductor device according to the first or second embodiment is used. The gate drive circuit of the element
By using the insulated gate semiconductor device as a gate drive circuit, it is possible to suppress a transient turn-on due to a sudden increase in voltage in a blocking state without increasing a turn-on loss of the insulated gate semiconductor device.

As described above, in the power converter using the gate drive circuit of the insulated gate semiconductor device according to the present embodiment, the abrupt voltage in the blocking state is increased without increasing the turn-on loss of the insulated gate semiconductor device. It is possible to obtain an excellent power converter capable of suppressing a transient turn-on due to a rise.

(Modification) In the power converter of the present embodiment, the gate drive circuit having the structure of the third or fourth embodiment shown in FIG. 3 or FIG. It may be used as a gate drive circuit.

(Other Embodiments) Even if the insulated gate type semiconductor element is a voltage gate drive element other than the IGBT, any of the first to fifth embodiments may be used. It is possible to obtain the same operation and effect as those described above.

[0083]

As described above, according to the present invention, it is possible to suppress a transitional turn-on due to a sharp voltage rise in a blocking state without increasing a turn-on loss of an insulated gate semiconductor device. An excellent gate drive circuit for an insulated gate semiconductor element, an insulated gate semiconductor element, and a power converter using the same can be provided.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a circuit diagram showing a schematic configuration example of an insulated gate semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a circuit diagram showing a schematic configuration example of a power converter using a gate drive circuit of an insulated gate semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a circuit diagram showing a schematic configuration example of a gate drive circuit of an insulated gate semiconductor device according to the related art.

[Explanation of symbols]

1, 1a to 1x: insulated gate semiconductor element (IGBT) 2, 2a to 2x: diode 3, 3a to 3x: individual gate resistance. 4, 4a-4d ... insulated gate semiconductor module (IG
BT) 5a On-gate power supply 5b Off-gate power supply 6a On switch 6b Off switch 7a On diode 7b Off diode 8a On gate resistance 8b Off gate resistance 9, 9a to 9d Gate drive circuits 10, 10a 10 to 10d: Capacitor 11, 11a to 11d: Diode 12: Resistor 13: Common gate resistance 14: Circuit board 15: Load 16: DC power supply

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) EY12 EY29 EZ57 GX01

Claims (6)

[Claims] 1. A gate drive circuit for an insulated gate semiconductor device which supplies a positive or negative voltage to a gate of the insulated gate semiconductor device and controls on / off of the gate, wherein one terminal is connected to an emitter of the insulated gate semiconductor device. Positive and negative control power supplies; an on diode and an off diode connected in anti-parallel to the other terminal of the control power supply; and an on diode and an off diode and a gate of the insulated gate semiconductor element. An on-gate resistance and an off-gate resistance respectively connected between the diode and a series circuit of a diode and a capacitor connected between the gate and the emitter of the insulated gate type semiconductor device. Connected to the gate of the insulated gate semiconductor device, one of the capacitors of the series circuit A terminal is connected to the emitter of the insulated gate semiconductor device, and an insulation is formed by short-circuiting between the diode and the capacitor of the series circuit and between the on diode and the on-gate resistor. Gate drive circuit for gate type semiconductor devices. 2. The gate drive circuit for an insulated gate semiconductor device according to claim 1, wherein a resistance between the diode and the capacitor of the series circuit and a resistance between the on-diode and the on-gate resistance are set. A gate drive circuit for an insulated gate semiconductor device, characterized in that the gate drive circuit is short-circuited. 3. A gate drive circuit for an insulated gate semiconductor device, which supplies positive and negative voltages to a gate of the insulated gate semiconductor device and controls on / off, wherein one terminal is connected to an emitter of the insulated gate semiconductor device. Positive and negative control power supply; a series circuit of an on-diode and an off-diode and an on-gate resistance and an off-gate resistance connected in anti-parallel to the other terminal of the control power supply; the series circuit and the insulated gate semiconductor A circuit board configured between the series circuit and the gate of the insulated gate type semiconductor element, wherein the circuit board has a diode and a common gate such that the series circuit side is a cathode. A resistor is connected in parallel with each other, and a capacitor is provided between the cathode and the emitter of the insulated gate semiconductor device. And a gate drive circuit for an insulated gate semiconductor device. 4. An insulated gate semiconductor device comprising the circuit board according to claim 3 in an insulated gate semiconductor module. 5. A power conversion device such as an inverter or a converter configured to include a plurality of insulated gate semiconductor elements and performing power conversion, wherein the insulation according to any one of claims 1 to 3 is provided. A power converter, wherein a gate drive circuit of a gate type semiconductor element is connected as a gate drive circuit of the insulated gate type semiconductor element. 6. A power conversion device such as an inverter or a converter configured to include a plurality of insulated gate semiconductor elements and performing power conversion, wherein the insulated gate semiconductor element according to claim 4 is replaced by an insulated gate. A power converter, comprising: a power semiconductor device.