JP2003186420A5 - - Google Patents

Claims (30)

An active matrix substrate having a plurality of pixel electrodes separated by a partition made of an insulating material on a substrate having active elements,
An active matrix substrate, wherein a conductive material is disposed at a position insulated from the pixel electrode on the partition wall.   2. The active matrix substrate according to claim 1, wherein the active element is a thin film transistor.   The active matrix substrate according to claim 1, wherein the conductive material is formed in a stripe shape or a lattice shape.   The active matrix substrate according to claim 1, wherein a concave portion is formed on an upper surface of the partition wall, and the conductive material is provided in the concave portion. An active matrix substrate, wherein a planarizing film is formed above an active element, and a plurality of pixel electrodes are disposed on the planarizing film. 6. The active matrix substrate according to claim 5, wherein the plurality of pixel electrodes are separated by a partition made of an insulating material. The active matrix substrate according to claim 6, wherein a conductive material is disposed on the partition wall.   An electro-optical device, wherein an electro-optical material is disposed on the active matrix substrate according to claim 1. 8. An organic electroluminescent element including an organic electroluminescent material is disposed on the active matrix substrate according to claim 5, and light emitted from the organic electroluminescent element is extracted from a side opposite to the active matrix substrate. An electro-optical device. A stacked body including a plurality of pixel electrodes separated by a partition made of an insulating material on a substrate having an active element, a light emitting layer disposed on the pixel electrode, and a counter electrode disposed on the stacked body An electro-optical device comprising:
An electro-optical device, wherein a conductive portion insulated from the pixel electrode is disposed on the partition, and the conductive portion is connected to the counter electrode.   The electro-optical device according to claim 10, wherein the active element is a thin film transistor.   The electro-optical device according to claim 10, wherein the conductive portion is formed in a stripe shape or a lattice shape.   The electro-optical device according to claim 10, wherein the light emitting layer contains an organic electroluminescence material.   The electro-optical device according to claim 10, wherein a material for forming the conductive portion is a material having higher conductivity than a material for forming the counter electrode.   15. The electro-optical device according to claim 10, wherein a concave portion is formed on an upper surface of the partition wall, and the conductive portion is formed in the concave portion.   16. The hole injection layer or the hole transport layer is provided on the electrode side that functions as an anode of the pixel electrode and the counter electrode of the light emitting layer. The electro-optical device according to 1.   The electro-optical device according to claim 10, wherein the counter electrode is formed by stacking a plurality of materials.   The electro-optical device according to claim 10, wherein light from the light emitting layer is extracted via a counter electrode side.   The electro-optical device according to claim 18, wherein the pixel electrode is disposed on an active element.   20. The electro-optical device according to claim 19, wherein a planarizing film is formed on the active element, and a pixel electrode is disposed on the planarizing film.   21. The electro-optical device according to claim 20, further comprising a relay electrode formed in the planarizing film.   21. The electro-optical device according to claim 10, wherein light from the light emitting layer is extracted via a pixel electrode side. In manufacturing the electro-optical device according to claim 10,
A method of manufacturing an electro-optical device, comprising: forming a pixel electrode and a partition wall separating a pixel and a conductive portion on the partition wall on a substrate; and forming a light emitting layer in a region partitioned by the partition wall.   23. The method of manufacturing an electro-optical device according to claim 22, wherein the light emitting layer is formed by applying a material of the light emitting layer by an ink jet method.   24. The electro-optical device manufacturing method according to claim 22, wherein a concave portion is formed on the upper surface of the partition wall, and the conductive portion is formed in the concave portion by applying a material of the conductive portion by an ink jet method. Method.   The upper surface of the partition wall is subjected to lyophilic treatment and the side surface is subjected to lyophobic treatment, and the upper surface portion of the partition wall is immersed in the material of the conductive portion prepared in a liquid state to adhere the conductive material to the upper surface of the partition wall. 24. The method of manufacturing an electro-optical device according to claim 22, wherein the material is cured to form a conductive portion.   When forming the partition wall and the conductive portion on the partition wall, a partition wall forming material is formed, and then a conductive material is formed on the film made of the partition wall forming material, and then the film made of the conductive material is patterned. 24. The electro-optical device according to claim 22, wherein a conductive portion is formed, and a film made of the partition wall forming material is patterned using the obtained conductive portion as a mask to form a partition wall. Production method.   By applying a material of a hole injection layer or a hole transport layer to the electrode functioning as an anode of the pixel electrode and the counter electrode with respect to the position to be the light emitting layer by an inkjet method, 27. The method of manufacturing an electro-optical device according to claim 22, wherein an injection layer or a hole transport layer is formed.   An electronic apparatus using the electro-optical device according to any one of claims 8 to 21 or the electro-optical device obtained by the manufacturing method according to any one of claims 22 to 27.   29. The electronic apparatus according to claim 28, wherein an antireflection film is provided on a light emitting side of the electro-optical device.