WO2013002321A1

WO2013002321A1 - Organic semiconductor device and method for manufacturing organic semiconductor device

Info

Publication number: WO2013002321A1
Application number: PCT/JP2012/066521
Authority: WO
Inventors: 中馬　隆
Original assignee: パイオニア株式会社; 三菱化学株式会社
Priority date: 2011-06-30
Filing date: 2012-06-28
Publication date: 2013-01-03
Also published as: JP2014170761A

Abstract

An organic semiconductor device in which a bank provided on a substrate has a plurality of opening portions that are arranged in a plurality of lines so that each line has the same number of opening portions. An organic semiconductor layer is provided within each one of the plurality of opening portions. The organic semiconductor layers constitute a plurality of organic semiconductor elements and at least one dummy element that does not function as an organic semiconductor element.

Description

Organic semiconductor device and method of manufacturing organic semiconductor device

The present invention relates to an organic semiconductor device including an organic semiconductor element such as an organic transistor and a method for manufacturing the organic semiconductor device.

Conventional technology

In recent years, the development of organic transistors using organic semiconductors has become active. Organic transistors are expected to open up unique uses such as electronic paper and flexible displays because they have the characteristics that they can be processed at low temperature and can be formed by printing.

In particular, from the viewpoint of cost reduction, development of a coating-type organic semiconductor material that can form an organic semiconductor layer without using a vacuum apparatus is in progress. An ink jet method is known as a method for forming a coating type organic semiconductor material. In the inkjet method, a bank having a plurality of openings is formed on a substrate, a droplet of an organic semiconductor material is ejected from a nozzle head of an inkjet coating apparatus toward the opening of the bank, and an organic semiconductor is formed in the opening. This is a technique for forming a layer.

In Patent Document 1, when the distance in the channel length direction between organic transistors in a pixel is a, and the distance in the channel length direction between organic transistors between adjacent pixels is b (a ≦ b), b is It is described that organic transistors are arranged so as to be an integral multiple of a. According to such an arrangement of organic transistors, when an organic semiconductor material is supplied to a predetermined position on a substrate by scanning a nozzle head in which a large number of ejection openings are regularly arranged in one direction, an ejection operation is performed. Since the number of wasteful discharge ports that are not used can be minimized, production efficiency can be improved.

WO08 / 120351 pamphlet

FIG. 1A is a plan view showing the configuration of the pixel 100 constituting the organic EL display panel, and FIG. 1B is a cross-sectional view taken along line 1b-1b in FIG. 1A. 1A and 1B show a nozzle head 200 for supplying an organic semiconductor material. The pixel 100 includes a bank 111 having a plurality of openings provided on a substrate 110, an organic electroluminescence element (hereinafter referred to as an organic EL element) OLED and a plurality of organic transistors formed in the openings of the bank 111. Tr1 to Tr5.

The organic transistors Tr1 to Tr5 are formed by supplying a liquid organic semiconductor material into each opening of the bank 111. The organic semiconductor material is supplied by disposing the nozzle head 200 of the ink jet coating apparatus above the substrate 110 and discharging droplets of the organic semiconductor material from the

discharge ports

201a and 201b. For example, the nozzle head 200 is scanned along the arrangement direction of the organic transistors indicated by arrows in FIG. 1A, and an organic semiconductor material is supplied into each opening of the bank 111. The nozzle head 200 has

discharge ports

201a and 201b arranged at a distance corresponding to the distance between two openings adjacent to each other in the left-right direction in FIG. These are simultaneously discharged from the

discharge ports

201a and 201b.

Here, in the example shown in FIG. 1A, the organic transistors Tr1 and Tr5 are relatively large in size, and the organic transistors Tr2, Tr3, Tr4 are relatively small in size. The size of the organic transistor is determined according to the magnitude of the operating current, for example. In the pixel 100, the number of organic transistors is different between the first column and the second column. That is, two organic transistors Tr1 and Tr2 are arranged in the first column, and three organic transistors Tr3, Tr4, and Tr5 are arranged in the second column.

In such a case, it is necessary to separately control the amount and discharge timing of the organic semiconductor material discharged from the

discharge ports

201a and 201b of the nozzle head 200, and the discharge control in the nozzle head becomes complicated. Further, if the number of organic transistors is different between the first row and the second row, it is necessary to temporarily stop the discharge of the organic semiconductor material at one discharge port. That is, in the example shown in FIG. 1A, after the nozzle head 200 is positioned above the formation position of the organic transistor Tr5, the organic semiconductor material is discharged from the discharge port 201a to correspond to the organic transistor Tr5. While supplying the organic semiconductor layer to the bank opening, it is necessary to stop the supply of the organic semiconductor material from the other discharge port 201b. Such operation in the nozzle head not only complicates the discharge control, but also causes a discharge stop period of the organic semiconductor material at any of the discharge ports, so the state of the organic semiconductor material inside the nozzle head changes, When the nozzle head is clogged, for example, the organic semiconductor material is not discharged properly when the discharge is restarted thereafter.

The present invention has been made in view of the above points, and in the case of forming an organic semiconductor layer by an inkjet method, an organic semiconductor device and an organic semiconductor device capable of simplifying discharge control of an organic semiconductor material can be achieved. An object is to provide a manufacturing method.

An organic semiconductor device of the present invention is provided on a substrate having a plurality of openings formed in a plurality of rows on the substrate and arranged in such a manner that the numbers in each row are equal to each other, and inside each of the plurality of openings. The organic semiconductor layer comprises a plurality of organic semiconductor elements and at least one dummy element that does not function as an organic semiconductor element.

The organic semiconductor device manufacturing method of the present invention includes a step of forming a bank having a plurality of openings formed on a substrate so as to form a plurality of rows and the numbers in each row are equal to each other, and the plurality of openings. Supplying a liquid organic semiconductor material to the inside of each of the sections; and drying the organic semiconductor material to form an organic semiconductor layer inside each of the plurality of openings. The layer is characterized by constituting a plurality of organic semiconductor elements and at least one dummy element that does not function as an organic semiconductor element.

FIG. 1A is a plan view illustrating the structure of the pixels constituting the organic EL display panel. FIG. 1B is a cross-sectional view taken along line 1b-1b in FIG. FIG. 2A is a plan view showing the structure of the pixels constituting the organic EL display panel which is an embodiment of the present invention. FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG. 3A to 3C are cross-sectional views for each process step in the manufacturing process of the organic EL display panel according to the embodiment of the present invention. FIGS. 4A to 4C are cross-sectional views for each process step in the manufacturing process of the organic EL display panel according to the embodiment of the present invention. It is a top view which shows operation | movement of a nozzle head. It is a top view which shows operation | movement of a nozzle head. It is a top view which shows the structure of the pixel which comprises the organic electroluminescent display panel which concerns on the other Example of this invention. It is a top view which shows the variation of arrangement | positioning of the organic transistor and dummy element which concern on the Example of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, substantially the same or equivalent components and parts are denoted by the same reference numerals. FIG. 2A is a plan view showing a schematic configuration of a pixel 1 constituting an organic EL display panel which is a kind of organic semiconductor device according to an embodiment of the present invention, and FIG. It is sectional drawing along the 2b-2b line | wire in a).

The organic EL display panel is composed of a plurality of pixels arranged in a matrix. The pixel 1 includes a bank 20 having a plurality of openings 21a to 21f and 22 provided on the substrate 30, organic transistors Tr1 to Tr5 formed in the openings 21a to 21e of the bank 20, and openings of the bank 20. The dummy element D1 provided in the part 21f and the organic EL element OLED provided in the opening 22 of the bank 20 are included.

The substrate 30 is made of a light-transmitting plate material or film material made of glass or plastic.

The bank 20 is a partition that separates the organic transistors Tr1 to Tr5, the dummy element D1, and the organic EL element OLED. The bank 20 has openings 21 a to 21 f formed in the drive circuit formation region 10 and an opening 22 formed in the light emitting region 11. The organic transistors Tr1 to Tr5 are provided in the openings 21a to 21e, the dummy element D1 is provided in the opening 21f, and the organic EL element OLED is provided in the opening 22.

In the drive circuit formation region 10, regardless of the number of organic transistors required in the pixel 1, the bank openings form a plurality of columns and the numbers of the bank openings in each column are equal to each other. Are arranged as follows. In the example shown in FIG. 2A, the openings 21a to 21f of the bank 20 are arranged in two rows in the drive circuit formation region 10 so that the number of openings in each row is three. It is arranged. That is, the

openings

21a, 21b, and 21c are arranged in the first row, and the

openings

21d, 21e, and 21f are arranged in the second row. In the following, the direction in which the

openings

21a, 21b, 21c are arranged or the direction in which the

openings

21d, 21e, 21f are arranged is referred to as a first direction, and the direction orthogonal to the first direction is referred to as a second direction. To do.

The openings 21a to 21f are formed in the same shape and the same size. In addition, the openings 21a to 21f are aligned so that the ends are aligned with other openings adjacent in the second direction. In the present embodiment, the number of bank openings in the drive circuit formation region 10 is six, but there is no particular limitation.

The organic transistors Tr1 to Tr5 constitute a drive circuit that drives the organic EL element OLED by a so-called active matrix system, and a drive transistor that supplies a drive current to the organic EL element OLED, a switching transistor that turns on or off the drive transistor, or these It functions as one of correction transistors that correct the operation of the transistor. The organic transistors Tr1 to Tr5 have a so-called bottom contact structure and are formed on the insulating film 32, a gate electrode 31 formed on the substrate 30, an insulating film 32 that covers the gate electrode 31 and functions as a gate insulating film. The drain electrode 33-1 and the source electrode 33-2, and the organic semiconductor layer 34 in contact with the drain electrode 33-1, the source electrode 33-2, and the gate insulating film 32 in the opening of the bank 20. The surface of the organic semiconductor layer 34 is covered with an overcoat layer 35 made of an insulator. The organic transistors Tr1 to Tr5 are composed of organic semiconductor layers having the same shape and the same size regardless of their functions.

The dummy element D1 is composed of an organic semiconductor layer 34 provided in the opening 21f of the bank 20. The dummy element D1 does not include the gate electrode 31, the drain electrode 33-1 and the source electrode 33-2 that the organic transistors Tr1 to Tr5 have. That is, the dummy element D1 is not electrically connected to any of the organic transistors Tr1 to Tr5, the power supply path is cut off, and does not function as an organic transistor that is an active element. The dummy element D1 includes an organic semiconductor layer 34 having the same shape and size as the organic transistors Tr1 to Tr5.

The dummy element D1 is provided in the opening where the organic transistor is not formed when the number of openings in the bank 20 is larger than the number of organic transistors in the drive circuit formation region 10. That is, the openings in the bank 20 are formed so that the number of openings in each column is equal to each other regardless of the number of organic transistors required in the pixel 1. The total number of may be larger than the number of organic transistors. In this embodiment, the number of organic transistors is five for a total of six openings 20a to 20f. In this case, the dummy element D1 is provided in the opening 20f where the organic transistor is not formed. In the present embodiment, the number of dummy elements D1 is one, but the present invention is not limited to this. In this embodiment, the dummy element D1 is arranged in the opening 20f. However, the arrangement of the dummy element D1 can be arbitrarily selected.

The organic EL element OLED is formed by laminating an anode 40, an organic functional layer 41, and a cathode 42 in the opening 22 of the bank 20 provided in the light emitting region 11. The anode 40 is connected to the drain electrode 33-1 of the organic transistor that functions as a drive transistor. The organic functional layer 41 has a laminated structure including, for example, a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer. The organic EL display panel according to this example is a so-called bottom emission type, and light emitted from the light emitting layer is extracted from the substrate 30 side.

Next, a method for manufacturing an organic EL display panel having the above-described configuration will be described. 3A to 3C and FIGS. 4A to 4C are cross-sectional views for each process step in the manufacturing process of the organic EL display panel according to this example.

First, a substrate 30 made of a light transmissive plate material such as glass or plastic or a film material is prepared. Before forming each element on the substrate 30, the substrate is cleaned with a cleaning liquid containing pure water, a surfactant, or the like to remove oils and fats attached to the surface of the substrate 30. Next, a Cr film having a thickness of about 100 nm is formed on the substrate 30 by sputtering or the like. Subsequently, a resist mask is formed on the Cr film by a known photolithography technique, and the Cr film is subjected to wet etching through the resist mask to pattern the Cr film. Thereby, the gate electrodes 31 of the organic transistors Tr1 to Tr5 are formed. A gate electrode is not formed at the formation position of the dummy element D1 (FIG. 3A).

Next, the insulating film functions as a gate insulating film on the substrate 30 and insulates a lower electrode wiring including a gate electrode (not shown) from an upper electrode wiring including a drain electrode and a source electrode formed in a later step. A film 32 is formed. For example, polysilazane can be used as the material of the insulating film 32. Polysilazane is an inorganic polymer soluble in an organic solvent, and an organic solvent solution can be used as a coating solution. After polysilazane is deposited on the substrate 30 by spin coating, the polysilazane is converted to high-purity silica (amorphous SiO ₂ ) by heat treatment. Thereby, an insulating film 32 covering the gate electrode 31 is formed on the substrate 30 (FIG. 3B).

Next, Cr (thickness 5 nm) and Au (thickness 100 nm) are sequentially deposited on the insulating film 32 by sputtering or the like to form a conductor film. Subsequently, the conductor film is subjected to patterning by wet etching through a resist mask (not shown). Thereby, the drain electrode 33-1 and the source electrode 33-2 are formed. The drain electrode 33-1 and the source electrode 33-2 have a channel part 33a on the gate electrode 31, and the insulating film 32 is exposed in the channel part 33a. The drain electrode 33-1 and the source electrode 33-2 are not formed at the formation position of the dummy element D1.

Next, a light-transmitting metal oxide conductor such as IZO (registered trademark) (Indium Zinc Oxide) or ITO (Indium Tin Oxide) is deposited on the insulating film 32 by patterning by etching. Thus, the anode 40 of the organic EL element OLED is formed. The anode 40 is connected to the drain electrode 33-1 of the organic transistor that functions as a driving transistor of the organic EL element OLED on the insulating film 32 (FIG. 3C).

Next, the bank 20 that separates the organic transistors Tr1 to Tr5, the dummy element D1, and the organic EL element OLED is formed. A fluorinated photopolymer film having a thickness of about 1 μm is formed on the substrate 30 that has undergone the above steps by spin coating. Thereafter, an opening is formed in the fluorinated photopolymer film by a known photolithography technique.

In the drive circuit formation region 10, a larger number of openings than the number of organic transistors required in a pixel form a plurality of rows, and the number of openings in each row is equal to each other. In the present embodiment, as shown in FIG. 2A, openings 21a to 21c corresponding to the organic transistors Tr1 to Tr3 are arranged in the first row, and openings 21d corresponding to the organic transistors Tr4 and Tr5, 21e is arranged in the second column. An opening 21f is additionally provided in the second row so that the numbers of openings in the first row and the second row are equal. As a result, the number of openings in the first row and the second row are both three. In the additional opening 21f, a dummy element D1 that does not function as an organic transistor as an active element is formed in a later step. The openings 21a to 21f are preferably formed in the same shape and the same size. Moreover, it is preferable that the two openings adjacent in the second direction are arranged so that the terminal positions of the openings are aligned with each other. A drain electrode 33-1 and a source electrode 33-2 and an insulating film 32 exposed in the channel portion 33a extend at the bottom of the openings 21a to 21e for forming the organic transistor. On the other hand, the opening 22 is provided at the formation position of the organic EL element OLED in the light emitting region 11. The anode 41 of the organic EL element OLED extends at the bottom of the opening 22 (FIG. 4A).

Next, an organic semiconductor material in which, for example, a tetrabenzoporphyrin derivative (tetrabenzoporphyrin) is dissolved in an ethyl benzoate solvent is applied into the openings 21a to 21f of the bank 20 by an ink jet method, and then this is baked to form the openings. An organic semiconductor layer 34 is formed in 21a to 21f.

Here, FIG. 5 is a plan view showing the operation of the nozzle head 200 of the ink jet coating apparatus. The nozzle head 200 has

discharge ports

201a and 201b for discharging droplets of an organic semiconductor material on the order of picoliters (pl). The

discharge ports

201a and 201b are arranged along the longitudinal direction of the nozzle head 200 with a separation distance corresponding to the interval between the bank openings adjacent to each other in the second direction.

The nozzle head 200 is positioned so that the longitudinal direction thereof is directed to the second direction, and the

discharge ports

201a and 201b are positioned immediately above the

adjacent openings

21a and 21d, respectively. Thereafter, the organic semiconductor material is simultaneously discharged from the

discharge ports

201a and 201b, and a predetermined amount of the organic semiconductor material is supplied into the

openings

21a and 21d (first step).

Subsequently, the nozzle head 200 moves along the first direction as indicated by an arrow in FIG. The nozzle head 200 is positioned so that the

discharge ports

201a and 201b are positioned immediately above the

adjacent openings

21b and 21e, respectively. Thereafter, the organic semiconductor material is simultaneously discharged from the

discharge ports

openings

21b and 21e (second step).

Subsequently, the nozzle head 200 is positioned so that the

discharge ports

201a and 201b are positioned immediately above the

adjacent openings

21c and 21f, respectively, and a predetermined amount of organic semiconductor material is supplied into the

openings

21c and 21f. (Third step). After supplying an organic semiconductor material to each opening of the bank 20, the organic semiconductor material is baked and crystallized. As a result, the organic semiconductor layer 34 is formed in the openings 21 a to 21 f of the bank 20.

Since the openings 21a to 21f of the bank 20 are arranged so that the numbers in each row are equal, the discharge control of the organic semiconductor material in the nozzle head 200 can be simplified. That is, since the number of openings in the bank 20 is the same in each row, when the nozzle head 200 is positioned in the first to third steps, there is always an opening immediately below each of the

discharge ports

201a and 201b. Will be. Accordingly, the organic semiconductor material can always be discharged from the

discharge ports

201a and 201b at the same timing. In other words, complicated discharge control of supplying the organic semiconductor material from one discharge port and stopping the supply of the organic semiconductor material from the other discharge port becomes unnecessary. In addition, by always interlocking the

discharge ports

201a and 201b, the discharge stop period can be minimized at each discharge port. Accordingly, it is possible to avoid the problem that the organic semiconductor material cannot be properly discharged from the nozzle head due to clogging or the like when the discharge of the organic semiconductor material is resumed after the discharge stop period has elapsed.

In the present embodiment, since there are five bank openings for forming the organic transistor, the number of bank openings is adjusted to be equal in each column by providing an additional opening 20f. Yes. The opening 20 f that is not originally required in terms of the function of the drive circuit functions as a container for the organic semiconductor material supplied from the nozzle head 200. If the opening 20f is not provided, since it is necessary to stop the supply of the organic semiconductor material from the discharge port 201a in Step 3 described above, the discharge control becomes complicated and the nozzle head is clogged. It tends to occur.

The organic semiconductor layer formed in the opening 20f does not need to be given a function as a transistor, and therefore power supply wirings such as a gate electrode, a drain electrode, and a source electrode are not connected. That is, the dummy element D1 that is separated from the organic transistors Tr1 to Tr5 and does not function as an organic transistor is formed in the opening 20f.

Further, since the openings 21a to 21f of the bank 20 are formed in the same shape and the same size, the amount of organic semiconductor material supplied to the openings 21a to 21f (the number of droplet shots) is the same. By doing so, the thickness of the organic semiconductor layer 34 formed in the openings 21a to 21f can be made equal. Thereby, the characteristics (for example, mobility) of the organic transistors Tr1 to Tr5 in the pixel can be made uniform. If the shape and size of the opening of the bank 20 are different from each other in the pixel, the thickness of the organic semiconductor layer is controlled by the amount of organic semiconductor material supplied (number of droplet shots). Thickness control is usually difficult and characteristic variations of organic transistors are likely to occur.

Further, by making the amount of organic semiconductor material (number of droplet shots) supplied into the openings 21a to 21f of the bank 20 equal to each other, it is possible to further simplify the discharge control of the organic semiconductor material in the nozzle head 200. It becomes. That is, in this case, the nozzle head 200 may repeat the same ejection operation in each of the first to third steps.

After forming the organic semiconductor layer 34, for example, an insulating film material in which polystyrene is dissolved in an ethyl benzoate solvent is formed on the organic semiconductor layer 34 by an ink jet method or the like, and is dried. As a result, an overcoat layer 35 having a thickness of about 4 μm is formed in the openings 21a to 21f to cover the organic semiconductor layer 34 (FIG. 4B).

Next, the organic functional layer 41 constituting the organic EL element OLED is formed on the substrate 30 that has undergone the above steps. The organic functional layer 41 has a laminated structure including, for example, a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer. The hole injection layer is made of, for example, copper phthalocyanine (CuPc) having a thickness of about 20 nm, and the hole transport layer is made of, for example, α-NPD (Bis [N- (1-naphthyl) -N-phenyl] benzidine) having a thickness of about 50 nm. The light emitting layer is made of, for example, Alq3 (tris- (8-hydroxyquinoline) aluminum) having a thickness of about 50 nm, and the electron injection layer is made of, for example, lithium fluoride (LiF) having a thickness of about 0.5 nm. The organic functional layer 41 is formed, for example, by repeating the film formation by a vacuum vapor deposition method and laminating the above layers. The organic functional layer 41 is formed so as to cover the anode 40 in the opening 22 of the bank 20. Finally, Al having a thickness of about 100 nm is deposited on the organic functional layer 41 by a vacuum evaporation method or the like to form the cathode 42 of the organic EL element OLED. In this manner, the anode 40, the organic functional layer 41, and the cathode 42 are stacked in the opening 22 of the bank 20 to form the organic EL element OLED (FIG. 4C). Through the above steps, an organic EL display panel having the organic transistors Tr1 to Tr5, the dummy element D1, and the organic EL element OLED is completed.

As described above, in the organic EL display panel according to the present embodiment, the drive circuit formation region has a larger number of openings than the required number of organic transistors, and the number of openings in each column. Are set to be equal. A dummy element that does not function as an organic transistor that is an active element is formed in the opening where the organic transistor is not formed. Thus, when the organic semiconductor material is simultaneously supplied to the plurality of openings adjacent to each other in the second direction by sequentially moving the nozzle head along the first direction, the nozzle head is always provided from the plurality of discharge ports provided in the nozzle head. Since the organic semiconductor material can be discharged at the same timing, the discharge control of the nozzle head can be simplified. In this case, since the discharge stop period can be minimized at each discharge port, problems such as clogging in the nozzle head can be avoided. In addition, since the bank openings provided in the drive circuit formation region have the same shape and the same size, the simplest discharge control in which the discharge of the organic semiconductor material is repeated with the same number of shots in each step. It becomes possible to make the thickness of the organic semiconductor layer uniform.

In the above embodiment, the longitudinal direction of the nozzle head is arranged in the second direction and the nozzle head is scanned along the first direction. However, as shown in FIG. The nozzle head 200 may be scanned along the second direction while the longitudinal direction of the nozzle head 200 is directed to the first direction. The nozzle head 200 is provided with

discharge ports

201a, 201b, and 201c along the longitudinal direction thereof, and the organic semiconductor material is simultaneously supplied to the three openings arranged along the first direction. Even in this case, the same effect as the above-described embodiment can be obtained.

In the above embodiment, the size of the opening of the bank provided in the drive circuit formation region 10 is all the same. However, as shown in FIG. 7, the size of the opening of the bank is different for each column. May be. Even in this case, the discharge control in the nozzle head can be simplified.

8 (a) to 8 (d) are plan views showing variations in the arrangement of the organic transistors and dummy elements in the drive circuit formation region 10. FIG. In FIG. 8A to FIG. 8D, the dummy elements are indicated by hatching. As shown in FIG. 8A, four organic transistors Tr1 to Tr4 and two dummy elements D1 and D2 may be arranged in two rows in the drive circuit formation region 10. Further, as shown in FIG. 8B, three organic transistors Tr1 to Tr3 and three dummy elements D1 to D3 may be arranged in two rows in the drive circuit formation region 10. Further, as shown in FIG. 8C, three organic transistors Tr1 to Tr3 and one dummy element D1 may be arranged in two rows in the drive circuit formation region 10. Further, as shown in FIG. 8D, two organic transistors Tr1 and Tr2 and two dummy elements D1 and D2 may be arranged in two rows in the drive circuit formation region 10.

1 pixel 20 bank 21a to 21f, 22 opening 30 substrate 31 gate electrode 32 insulating film 33-1 drain electrode 33-2 source wiring 33a channel part 34 organic semiconductor layer 40 anode 41 organic functional layer 42 cathode 100 pixel 110 substrate 111 bank 200

Nozzle head

201a, 201b Discharge port Tr1-Tr5 Organic transistor OLED Organic EL element D1-D3 Dummy element

Claims

A bank having a plurality of openings arranged in a plurality of rows on the substrate and arranged so that the quantities in each row are equal to each other;
An organic semiconductor layer provided inside each of the plurality of openings,
The organic semiconductor device comprises a plurality of organic semiconductor elements and at least one dummy element that does not function as an organic semiconductor element.
The organic semiconductor device according to claim 1, wherein shapes and sizes of the plurality of openings belonging to the same row are the same.
The organic semiconductor device according to claim 1, wherein the plurality of openings have the same shape and size.
The organic semiconductor device according to claim 1, wherein the dummy element has no power supply wiring connected thereto.
The organic semiconductor device according to claim 1, further comprising an organic electroluminescence element connected to the organic semiconductor element.
Forming a bank having a plurality of openings arranged in a plurality of rows on the substrate and the numbers in each row being equal to each other;
Supplying a liquid organic semiconductor material inside each of the plurality of openings;
Drying the organic semiconductor material to form an organic semiconductor layer inside each of the plurality of openings, and
The organic semiconductor layer comprises a plurality of organic semiconductor elements and at least one dummy element that does not function as an organic semiconductor element.
In the step of supplying the organic semiconductor element, nozzle heads that discharge the organic semiconductor material sequentially move along a first direction in which the plurality of openings are arranged, and in a second direction intersecting the first direction. The manufacturing method according to claim 6, wherein the organic semiconductor material is simultaneously supplied into a plurality of adjacent openings.
The manufacturing method according to claim 6, wherein the plurality of openings have the same shape and size.