JP2007088127A - Manufacturing method and substrate for organic semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for an organic semiconductor device capable of measuring a film thickness without wasting the organic semiconductor device as an actual device, and capable of detecting the defect of an organic film without making a current flow and a substrate for the organic semiconductor device. <P>SOLUTION: The manufacturing method for the organic semiconductor device has the organic films 60 and 70 on the substrate 20. The manufacturing method for the organic semiconductor device contains a film-manufacturing process in which the organic films 60 and 70 are manufactured in a specified region and a dummy region 3 set to a section excepting the specified region on the substrate 20, and a measuring process in which the absorbances of the organic films 60 and 70 manufactured in the dummy region 3 are measured. In the manufacturing method, the film thicknesses of the organic films 60 and 70 are obtained on the basis of the absorbances measured by the measuring process. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an organic semiconductor device manufacturing method and an organic semiconductor device substrate.

In recent years, organic semiconductor devices represented by organic electroluminescence devices (hereinafter referred to as organic EL devices), organic transistors, solar cells and the like have been proposed.
In such an organic semiconductor device, since the organic film can be formed by a wet film forming method (coating method), it is not necessary to use a vacuum device, and the manufacturing equipment can be relatively simplified, The manufacturing cost of the organic semiconductor device can be reduced.

The performance of the organic semiconductor device depends on the film thickness of the organic film. For example, in the case of an organic EL device, the light emission characteristics and the light emission lifetime are affected by the film thickness of an organic film such as a light emitting layer. Therefore, in order for the organic semiconductor device to achieve desired performance and function, it is necessary to manage the organic film with a predetermined film thickness. As a method for measuring the film thickness of an organic film, a film thickness measuring method using a contact-type step meter, an ellipsometer using interference, or the like is generally known.
However, it has been pointed out that the method using the step meter has the disadvantage that the organic film must be peeled off and the step is monitored, and the method using the ellipsometer has the disadvantage that it takes a lot of measurement time. Furthermore, in order to measure the film thickness of the organic film, it was necessary to perform the measurement at the expense of the actual panel on which the organic film was formed.
Therefore, recently, a method has been proposed in which the film thickness of the organic film is measured by irradiating the organic film with ultraviolet light to detect the fluorescence intensity and obtaining the spectral intensity (see, for example, Patent Document 1). According to this, it becomes possible to measure the film thickness of the organic film in a non-contact manner.
JP 2003-279326 A

By the way, since the organic film in the organic semiconductor device has a characteristic that it easily deteriorates when irradiated with irradiation light such as ultraviolet rays, in the film thickness measuring method according to Patent Document 1, the organic film is accompanied with the film thickness measurement. There is a problem of deteriorating.
Further, in Patent Document 1, although the film thickness of the organic film is measured, there is a problem that it cannot be detected whether or not the organic film functions normally.
In addition, the defect detection method of the organic film detects a defect by flowing an electric current through the organic film after actually fabricating the device of the organic semiconductor device. There is a problem that you can not. That is, it is difficult to find a defect in the organic film immediately after the organic film forming process.

  The present invention has been devised in view of the above-described problems, and can measure the film thickness without wasting an organic semiconductor device that is an actual device, and can detect a defect in an organic film without passing an electric current. An object of the present invention is to provide an organic semiconductor device manufacturing method and an organic semiconductor device substrate.

In order to solve the above problems, the present inventor has conceived the present invention having the following means.
That is, the method for manufacturing an organic semiconductor device of the present invention is a method for manufacturing an organic semiconductor device having an organic film on a substrate, and is set in a predetermined region and a portion excluding the predetermined region on the substrate. A film forming step of forming the organic film on the dummy region, and a measuring step of measuring the absorbance of the organic film formed on the dummy region, and the absorbance measured by the measuring step Based on this, the thickness of the organic film is obtained.

Here, the organic semiconductor device is an organic electronic device that includes an organic film as an active layer and includes, for example, an organic EL device, an organic transistor, and an organic solar cell.
The thickness of the organic film is preferably obtained from the absorbance based on a correlation diagram or table of the absorbance and thickness of the organic film obtained in advance by experiments.
In this way, since the film thickness is measured using the organic film in the dummy region, it is not necessary to directly measure the film thickness of the organic film that is a component of the actual organic semiconductor device. Further, even if the organic film is irradiated with irradiation light such as ultraviolet rays, the organic film is formed in the dummy region, so that the organic film in the predetermined region is not affected. Therefore, the film thickness of the organic film formed in the predetermined region can be measured using the organic film in the dummy region. Thereby, the film thickness can be controlled for each of the semiconductor device substrates manufactured in a mass production.

In the method for manufacturing an organic semiconductor device of the present invention, the film forming step includes a step of forming a first organic film on the substrate in the dummy region, and a second step at least partially on the first organic film. And a step of forming an organic film.
In this way, an organic film composed of the first organic film and the second organic film can be formed in the dummy region.

  In the method for manufacturing an organic semiconductor device of the present invention, in the film forming step, a single layer portion of the first organic film and a stacked portion of the first organic film and the second organic film are formed in the dummy region. Forming and after the film forming step, the measuring step measures the absorbance of the single layer portion and the laminated portion, and based on the absorbance measured by the measuring step, The film thickness of the second organic film is obtained.

Here, it is preferable to form the second organic film by a droplet discharge method. In this case, the second organic film can be formed by discharging only to a predetermined portion.
In this way, the absorbance of the second organic film can be obtained by subtracting the absorbance of the single layer portion from the absorbance of the laminated portion without measuring the absorbance of the single layer of the second organic film. And the film thickness of a 2nd organic film can be calculated | required from the said light absorbency.

The method for producing an organic semiconductor device of the present invention is characterized by including a step of forming a partition that separates the single layer portion and the laminated portion prior to the film forming step.
In this way, an organic film can be formed in a region surrounded by the partition walls.

  In the method for manufacturing an organic semiconductor device of the present invention, the measurement step includes a first measurement step of measuring the absorbance of the first organic film after the first organic film is formed in the dummy region, and the first measurement step. A second measuring step of measuring the absorbance of the laminated portion of the first organic film and the second organic film after the second organic film is laminated on all the organic films, and is measured by the measuring step. The film thicknesses of the first organic film and the second organic film are obtained based on the absorbance.

Here, it is preferable to form the second organic film by spin coating. In this way, the second organic film can be applied and formed on the entire surface.
In this way, the absorbance of the second organic film can be obtained by subtracting the absorbance of the single layer portion from the absorbance of the laminated portion without measuring the absorbance of the single layer of the second organic film. And the film thickness of a 2nd organic film can be calculated | required from the said light absorbency.

In the method for manufacturing an organic semiconductor device of the present invention, the measuring step measures the fluorescence intensity of the organic film formed in the dummy region.
In this way, the defect of the organic film can be detected by measuring the fluorescence of the organic film without passing an electric current through the organic film.

In the method for manufacturing an organic semiconductor device of the present invention, the measurement step is performed by an absorbance measuring means having a microscopic function.
In this way, the absorbance of the organic film formed in a fine region can be measured.

The substrate for an organic semiconductor device of the present invention is an organic semiconductor device substrate including an organic film on the substrate, and the organic film includes a region where the organic semiconductor device is formed and the region on the substrate. It is characterized in that it is formed in a dummy region formed in a portion excluding.
By using such a substrate for an organic semiconductor device, the above manufacturing method can be suitably performed.
Therefore, it is not necessary to directly measure the film thickness of the organic film that is a component of the actual organic semiconductor device by measuring the film thickness using the organic film in the dummy region. In addition, even if the organic film is irradiated with irradiation light such as ultraviolet rays, since the organic film is formed in the dummy region, the organic film in the region where the organic semiconductor device is formed may be affected. Absent. Therefore, the film thickness of the organic film formed in the region where the organic semiconductor device is formed can be measured using the organic film in the dummy region. Thereby, the film thickness can be controlled for each of the semiconductor device substrates manufactured in a mass production.

In the organic semiconductor device substrate of the present invention, the dummy region has the same shape as a pixel provided in a region where the organic semiconductor device is formed.
In this way, when the organic semiconductor device is formed in the region where the organic semiconductor device is formed or the dummy region using the wet film forming method or the droplet discharge method, the region in which the organic semiconductor device is formed and the dummy region. The film thickness of the organic film becomes the same.
Therefore, when the film thickness of the organic film in the dummy region is measured by the above manufacturing method, the measurement result can be measured as the film thickness of the organic film in the region where the organic semiconductor device is formed.

In the substrate for an organic semiconductor device of the present invention, the dummy region is arranged around a pixel to be subjected to film thickness measurement in a region where the organic semiconductor device is formed.
In this way, since the pixel for measuring the film thickness and the dummy area are arranged adjacent to each other on the substrate, when the film thickness of the organic film in the dummy area is measured, the measurement result is the object to be measured for the film thickness. It can be measured as the film thickness of the organic film in this pixel.

In the organic semiconductor device substrate of the present invention, wiring is formed on the substrate, and the dummy region is disposed in a region where the wiring is not formed.
Here, the wiring means a wiring for supplying a current to the organic film, a signal line for driving a switching element such as a thin film transistor, a capacity wiring for holding a driving state of the switching element, or the like.
In the present invention, since the dummy area is arranged in the non-wiring area, it is possible to prevent the wiring and the dummy area from overlapping each other.

The organic semiconductor device substrate of the present invention is characterized in that a plurality of the dummy regions are formed on the substrate at a predetermined interval.
In this way, by measuring the film thickness of the organic film in the dummy region, it is possible to obtain a film thickness distribution measured at predetermined intervals on the substrate.

Embodiments of an organic semiconductor device manufacturing method and an organic semiconductor device substrate according to the present invention will be described below with reference to the drawings.
First, the organic EL device substrate according to the organic semiconductor device substrate will be described.
FIG. 1 is a plan view showing an organic EL device substrate.
As shown in FIG. 1, the organic EL device substrate 1 has a plurality of chip regions (predetermined regions) 2 and a plurality of TEGs (Test Element Groups, dummy regions) 3 on a mother substrate (substrate) 20. Configured.

Here, the mother board | substrate 20 is a large sized board | substrate for extract | collecting the some chip | tip area | region 2, and consists of light transmissive board | substrates, such as glass.
The chip region 2 is a region where a switching element such as a thin film transistor, a light emitting functional layer (organic film), or the like is formed on the mother substrate 20, and the vicinity of the boundary of the chip region 2 is chipped (divided) with a cutter or the like. ), Each chip region 2 becomes an organic EL panel (organic EL device, organic semiconductor device). In the present embodiment, 16 organic EL panels of 4 columns and 4 rows can be collected from one mother substrate 20.

The TEG 3 is an area formed in a portion excluding the chip area 2 on the mother substrate 20, and is formed in a total of 17 locations in the present embodiment. Such a TEG 3 is a region for measuring the film thickness of the light emitting functional layer 110 formed on the mother substrate 20 and obtaining the distribution thereof, and is therefore uniform in the central portion and the peripheral portion of the mother substrate 20. A plurality are formed at intervals.
Next, the configuration of the chip region 2 and the TEG 3 will be described in detail.

(Chip area)
FIG. 2 is an enlarged cross-sectional view of each chip region 2.
As shown in FIG. 2, the chip area 2 includes a plurality of pixels. Here, the pixel includes a pixel electrode 23 formed on the mother substrate 20, a light emitting functional layer 110 formed on the pixel electrode 23, and a cathode 50 formed on the light emitting functional layer 110. Has been. In the chip region 2, the partition wall 22 is provided between the adjacent pixel electrodes 23, in other words, between the adjacent light emitting functional layers 110. As a result, each of the plurality of pixels is isolated by the partition wall 22.
Note that a TFT (not shown) is connected to the pixel electrode 23, and a current flows between the pixel electrode 23 and the cathode 50 by the switching operation of the TFT, so that light emission occurs in the light emitting functional layer 110. ing.

  The pixel electrode 23 is a transparent conductive film such as indium tin oxide (ITO). This makes it possible to realize a bottom emission type organic EL panel that extracts emitted light to the substrate 20 side. Further, as the pixel electrode 23, a single layer structure of a light reflective metal such as Al or a laminated structure of the light reflective metal and the transparent conductive film may be employed instead of the transparent conductive film. In this case, a top emission type organic EL panel can be realized.

The light emitting functional layer 110 includes a hole injection layer (first organic film) 70 formed on the pixel electrode 23 and an organic EL layer (second organic film) 60 formed on the hole injection layer 70. It is configured by stacking.
Here, the organic EL layer 60 is configured by organic EL layers 60R, 60G, and 60B that emit light in respective colors of R (red), G (green), and B (blue). By providing such an organic EL layer 60 of each color for each pixel electrode 23, one pixel is composed of a red pixel, a green pixel, and a blue pixel, and an organic EL panel that performs full color display can be realized. Become.

As a material for forming the hole injection layer 70, in the case of a polymer material, a dispersion liquid of 3,4-polyethylenediosithiophene / polystyrene sulfonic acid (PEDOT / PSS), that is, 3,4 in polystyrene sulfonic acid as a dispersion medium. -A dispersion in which polyethylenedioxythiophene is dispersed and further dispersed in water is preferably used.
The material for forming the hole injection layer 70 is not limited to those described above, and various materials can be used. For example, a material obtained by dispersing polystyrene, polypyrrole, polyaniline, polyacetylene or a derivative thereof in an appropriate dispersion medium such as the aforementioned polystyrene sulfonic acid can be used. As the low molecular weight material, an ordinary hole injection material such as copper phthalocyanine, m-MTDATA, TPD, α-NPD, or the like can be used in the vapor deposition method.

As a material for forming the organic EL layer 60, a known light emitting material capable of emitting fluorescence or phosphorescence is used. Specifically, polymer materials include (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl carbazole (PVK), Polythiophene derivatives, polysilanes such as polymethylphenylsilane (PMPS), and the like are preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as. As a low molecular weight material, a host material such as Alq3 or DPVBi, doped with Nile Red, DCM, rubrene, perylene, rhodamine, or the like, or a host alone can be used in a vapor deposition method.
Further, as a material for forming the red organic EL layer 60, for example, MEHPPV (poly (3-methoxy6- (3-ethylhexyl) paraphenylenevinylene) is used, and as a material for forming the green organic EL layer 60, for example, polydioctylfluorene is used. For example, polydioctylfluorene may be used as a material for forming the blue organic EL layer 60 in the mixed solution of F8BT (an alternating copolymer of dioctylfluorene and benzothiadiazole). In particular, the thickness is not limited, and a preferable film thickness is adjusted for each color.

  The cathode 50 has a larger area than the total area of the organic EL layer 60 and is formed so as to cover the first area. The first cathode made of a low work function metal provided on the organic EL layer 60; The second cathode is provided on the first cathode and protects the first cathode. The metal having a low work function for forming the first cathode is preferably a metal having a work function of 3.0 eV or less, specifically, Ca (work function; 2.6 eV), Sr (work function; 2 .1 eV) and Ba (work function; 2.5 eV) are preferably used. The second cathode is provided to cover the first cathode and protect it from oxygen, moisture, and the like, and to increase the conductivity of the entire cathode 50. And since this invention is a top emission structure premise, it needs to be transparent. Therefore, the material for forming the second cathode is limited to a material having high conductivity, chemically stable and transparent, and having a relatively low film forming temperature. For example, ITO is preferably used. IZO provided by Idemitsu and others is also good. In addition, tungsten indium oxide and indium gallium oxide are also suitable.

  The partition wall 22 is a member that separates the light emitting functional layer 110 for each pixel electrode when the light emitting functional layer 110 is formed by a wet film forming method. Such a partition wall 22 includes an inorganic partition wall made of an inorganic material and an organic partition wall made of an organic material. The inorganic partition wall is made of a silicon oxide film, is provided in contact with the side of the pixel electrode 23, and the surface state is lyophilic, so that the liquid material of the light emitting functional layer 110 formed by a wet film formation method is wetted. It can be spread. The organic partition is made of an organic material such as an acrylic resin or a polyimide resin, a non-photosensitive resin or a photosensitive resin. Further, the surface of the organic partition wall is given liquid repellency by plasma treatment. Such a partition wall 22 is configured to receive the light emitting functional layer 110 formed by coating on the pixel electrode 23.

(TEG)
FIG. 3 is an enlarged cross-sectional view of each TEG 3.
As shown in FIG. 3, in the TEG 3, the pixel electrode 23 and the cathode 50 are not formed as compared with the configuration of the chip region 2, and the partition wall 22, the hole injection layer 70, and the organic EL layer 60 are included in the mother substrate 20. It is the structure formed above. The partition wall 22, the hole injection layer 70, and the organic EL layer 60 are formed in the same manner as the step of forming the chip region 2.
The TEG 3 has openings 24 a, 24 b, 24 c surrounded by the partition walls 22. Here, in the opening 24a, a stacked portion 25a composed of the hole injection layer 70 and the organic EL layer 60R is formed. In addition, a single layer portion 26 composed only of the hole injection layer 70 is formed in the opening 24b. In the opening 24c, a laminated portion 25b composed of the hole injection layer 70 and the organic EL layer 60B is formed.
The TEG 3 of this embodiment is formed by forming the laminated portions 25a, 25b and the single layer portion 26 in the three openings 24a, 24b, 24c. The structure which formed the laminated part of EL layer 60G may be sufficient. Or the structure which formed the laminated part and the single layer part in the two opening parts may be sufficient, respectively.

  In the TEG 3, each of the openings 24a, 24b, and 24c has the same planar shape as the pixels in the chip region 2. Accordingly, when the hole injection layer 70 and the organic EL layer 60 are formed with the same discharge amount by the inkjet method (described later) on the chip region 2 and the TEG 3, the film thickness of the hole injection layer 70 and the organic EL layer 60 is as follows. The same applies to the pixels in the chip region 2 and the openings 24a, 24b, and 24c in the TEG3. Thereby, in the manufacturing method described later, if the film thickness of the hole injection layer 70 or the organic EL layer 60 of the TEG 3 is measured, the measurement result is the film of the hole injection layer 70 or the organic EL layer 60 of the chip region 2. It can be measured as thickness.

Further, the TEG 3 is disposed adjacent to the periphery of the pixel whose thickness is to be measured in the chip region 2. Here, the film thickness measurement target means the hole injection layer 70 or the organic EL layer 60 whose film thickness is measured by a manufacturing method described later.
Thereby, when the film thickness of the hole injection layer 70 or the organic EL layer 60 in the TEG 3 is measured, the measurement result can be measured as the film thickness of the hole injection layer 70 or the organic EL layer 60 in the pixel of the film thickness measurement target. .

On the mother substrate 20, a power supply line for supplying a current to the organic EL layer 60, a signal line for driving a switching element such as a thin film transistor, or a capacity wiring for holding the driving state of the switching element is formed. The TEG 3 is disposed in a region where these wirings are not formed. Thereby, it can prevent that wiring and TEG3 overlap.
In addition, since a plurality of TEGs 3 are formed at predetermined intervals on the substrate, the film thickness distribution measured at predetermined intervals on the substrate can be obtained by measuring the film thickness of the organic film on the TEG 3. .

(First Embodiment of Manufacturing Method of Organic Semiconductor Device)
Next, with reference to FIGS. 4-6, 1st Embodiment of the manufacturing method of an organic-semiconductor device is described.
FIG. 4 is a flowchart showing the first embodiment of the method for manufacturing the organic semiconductor device. FIG. 5 shows a method for measuring the thickness of the light emitting functional layer 110, and is an enlarged sectional view of the TEG 3 corresponding to FIG. FIG. 6 is a diagram showing the relationship between the absorbance and the film thickness of the light emitting functional layer.
In the following description, a method for manufacturing an organic semiconductor device will be described along the flowchart of FIG.

First, the pixel electrode 23 is formed on the mother substrate 20 (step S1). In this step, the pixel electrode 23 is formed only in the chip region 2 shown in FIG. 2, and the pixel electrode 23 is not formed in the TEG 3 shown in FIG.
Thereby, when measuring the absorbance of the single layer part 26 and the laminated parts 25a, 25b of the TEG 3, the absorbance can be measured by transmitting each of the single layer part 26 and the laminated parts 25a, 25b. It becomes possible.
It is possible to measure the absorbance by forming the pixel electrode 23 on the TEG 3 and reflecting the light at the pixel electrode 23. However, in the measurement method, the variation in the film thickness of the pixel electrode 23 becomes a measured value of the absorbance. The actual film thickness may not be detected with high accuracy. Therefore, a measurement result with higher accuracy can be obtained by measuring the absorbance of the TEG 3 using transmitted light without forming the pixel electrode 23 on the TEG 3.

  Next, the partition wall 22 is formed on the mother substrate 20 (step S2). By performing this step, the partition wall 22 is formed between the pixel electrodes 23 in the chip region 2. In the TEG 3, the partition wall 22 is formed on the mother substrate 20. Here, the pitch of the partition walls 22 formed in each of the chip region 2 and the TEG 3 is the same, and is formed with a pixel pitch (for example, 80 to 100 μm) of the chip region 2.

Next, the hole injection layer 70 is formed (step S3, film forming process). By performing this step, the hole injection layer 70 is formed on the pixel electrode 23 in the chip region 2. In the TEG 3, the hole injection layer 70 is formed in each of the openings 24a, 24b, and 24c on the mother substrate 20.
In this step, the hole injection layer 70 is formed in the region surrounded by the partition wall 22 by using an ink jet method (droplet discharge method, wet film forming method). Further, after the liquid material is ejected by the ink jet method, the solvent component is removed by heat drying treatment, so that only the solid component is formed on the pixel electrode 23 of the chip region 2 and the mother substrate 20 of the TEG 3.

Next, the organic EL layer 60 is formed (step S4, film forming process). By performing this step, the organic EL layer 60 (60R, 60G, 60B) is formed on the hole injection layer 70 in the chip region 2. In TEG3, the organic EL layer 60R is formed on the hole injection layer 70 in the opening 24a, and the organic EL layer 60B is formed on the hole injection layer 70 in the opening 24c. Further, the organic EL layer 60 is not formed in the opening 24b.
Such an organic EL layer 60 (60R, 60G, 60B) is formed using an inkjet method in the same manner as in step S3. Further, after discharging the liquid material by the ink jet method, the solvent component is removed by heat drying treatment, and only the solid component is formed on the hole injection layer 70.
By performing this process, a laminated portion 25a of the hole injection layer 70 and the organic EL layer 60R is formed in the opening 24a. A single layer portion 26 consisting only of the hole injection layer 70 is formed in the opening 24b. A laminated portion 25b of the hole injection layer 70 and the organic EL layer 60B is formed in the opening 24c.

Next, the absorbance of the single layer part 26 is measured (step S5, measurement process), and the absorbance of the laminated parts 25a and 25b is measured (step S6, measurement process).
Here, a method for measuring absorbance will be described with reference to FIG. The absorbance is measured using a spectrophotometer (absorbance measuring means) 10. The spectrophotometer 10 includes a light source 11, a detection unit 12, and a light amount measurement unit 13. The light source 11 emits light such as ultraviolet light, and the light quantity measurement unit 13 measures the light quantity detected by the detection unit 12. With such a configuration, the spectrophotometer 10 can measure the amount of light absorbed by the measurement object between the light source 11 and the detection unit 12. Specifically, the absorbance can be measured by the ratio between the light emission intensity of the light source 11 and the light reception intensity of the detection unit 12. Then, the smaller the received light intensity, the greater the absorbance of the measurement object, and the greater the received light intensity, the smaller the absorbance of the measurement object.
The spectrophotometer 10 can relatively move the light source 11 and the detection unit 12 and the measurement target with a resolution of about 10 μm. Therefore, the light source 11 and the detection unit 12 can be adjusted to each of the openings 24a, 24b, and 24c.

In the present embodiment, as shown in FIG. 5, the light of the light source 11 is incident from the back surface of the mother substrate 20 (non-formation surface of the organic EL layer 60) in the TEG 3, and the surface of the mother substrate 20 (of the organic EL layer 60 is formed). The detection unit 12 receives light on the formation surface.
And as shown to Fig.5 (a), the light which permeate | transmits the single layer part 26 is measured, and the light absorbency of the said single layer part 26 is measured (step S5). Thereby, the absorbance L of only the hole injection layer 70 is measured.
Moreover, as shown in FIG.5 (b), the light which permeate | transmits the laminated part 25a is measured, and the light absorbency of the said laminated part 25a is measured (step S6). Thereby, the absorbance M of the hole injection layer 70 and the organic EL layer 60R is measured.
Moreover, as shown in FIG.5 (c), the light which permeate | transmits the laminated part 25b is measured, and the light absorbency of the said laminated part 25b is measured (step S6). Thereby, the absorbance N of the hole injection layer 70 and the organic EL layer 60B is measured.

  Next, the absorbances of the hole injection layer 70 and the organic EL layers 60R and 60B are calculated from the absorbances L, M, and N thus measured. That is, since the absorbance L of only the hole injection layer 70 is measured, the value of the difference between the absorbance M and the absorbance L is calculated as the absorbance of only the organic EL layer 60R. Further, the value of the difference between the absorbance N and the absorbance L is calculated as the absorbance of only the organic EL layer 60B.

Next, the film thicknesses of the organic EL layers 60R and 60B are calculated (step S7).
Here, the film thicknesses of the organic EL layers 60R and 60B are obtained based on the absorbance of the organic EL layers 60R and 60B obtained by the above-described steps.
FIG. 6A shows the result of plotting the correlation between the film thickness values of the organic EL layers 60R and 60B measured in advance by the step-type film thickness measuring apparatus and the absorbance measured by the spectrophotometer 10 for each wavelength. FIG. 6B is a diagram showing the relationship between the absorbance and film thickness for light with a wavelength of 382 nm, and FIG. 6C is a diagram showing the relationship between absorbance and film thickness for light with a wavelength of 464 nm.
As is clear from FIG. 6B, the film thickness of the organic EL layer 60B and the absorbance of the organic EL layer 60B have a direct proportional relationship. Therefore, from the absorbance of the organic EL layer 60B, the organic EL layer 60B The film thickness of the EL layer 60B can be obtained.
Further, as is clear from FIG. 6C, the film thickness of the organic EL layer 60R and the absorbance of the organic EL layer 60R have a directly proportional relationship. Therefore, from the absorbance of the organic EL layer 60R, The film thickness of the organic EL layer 60R can be obtained.

  As described above, in the present embodiment, since the film thickness is measured using the hole injection layer 70 and the organic EL layer 60 in the TEG 3, the chip region which is one component of the actual organic panel It is not necessary to directly measure the film thicknesses of the hole injection layer 70 and the organic EL layer 60 in FIG. Further, even if the hole injection layer 70 or the organic EL layer 60 is irradiated with irradiation light such as ultraviolet rays, these are formed on the TEG 3, so that the hole injection layer 70 or the organic EL in the chip region 2 is formed. The layer 60 is not affected. Therefore, the film thickness of the hole injection layer 70 and the organic EL layer 60 formed in the chip region 2 can be measured using the hole injection layer 70 and the organic EL layer 60 in the TEG 3. Further, the film thickness can be controlled for each of the organic EL device substrates 1 manufactured in a mass production manner.

In the present embodiment, the absorbance of the single layer portion 26 of the hole injection layer 70 and the absorbance of the stacked portion 25 of the hole injection layer 70 and the organic EL layer 60R are determined by the continuous absorbance measurement of Step S5 and Step S6. The organic EL layer 60R is measured from these absorbances.
Therefore, the absorbance of the organic EL layers 60R and 60B can be obtained by subtracting the absorbance of the single layer portion 26 from the absorbance of the stacked portions 25a and 25b without measuring the absorbance of the single layers of the organic EL layers 60R and 60B. Can do. And the film thickness of organic EL layer 60R, 60B can be calculated | required from the said light absorbency.

  In the present embodiment, the absorbance of the hole injection layer 70 and the organic EL layer 60 in the TEG 3 is measured by the spectrophotometer 10, but these fluorescence intensities may be measured. In this way, it is possible to determine the defect of the hole injection layer 70 and the organic EL layer 60 without flowing current.

(Second Embodiment of Manufacturing Method of Organic Semiconductor Device)
Next, a second embodiment of a method for manufacturing an organic semiconductor device will be described.
FIG. 7 is a flowchart showing a second embodiment of a method for manufacturing an organic semiconductor device. FIG. 8 shows a method for measuring the thickness of the light emitting functional layer 110 and is an enlarged cross-sectional view of the TEG 3. FIG. 6 is a diagram showing the relationship between the absorbance and the film thickness of the light emitting functional layer.
This embodiment is different from the first embodiment in that the hole injection layer 70 and the organic EL layer 60 are formed by a spin coating method.
In the following description, a method for manufacturing an organic semiconductor device will be described along the flowchart of FIG. In addition, the same code | symbol is attached | subjected to the same structure as 1st Embodiment, and description is abbreviate | omitted.

First, the pixel electrode 23 is formed only in the chip region 2 (step S11).
Next, the partition wall 22 is formed in the chip region 2 and the TEG 3 (step S12).
Next, the hole injection layer 70 is formed (step S13). Here, the hole injection layer 70 is formed on the entire surface of the mother substrate 20 by using a spin coating method (wet film forming method).
In this embodiment, since the partition wall 22 is not given liquid repellency, the hole injection layer 70 is also formed on the surface of the partition wall 22.
Further, after the liquid material is applied by spin coating, the solvent component is removed by a heat drying process, so that only the solid component is formed on the pixel electrode 23 in the chip region 2 and on the TEG mother substrate 20. .

Next, the absorbance of the hole injection layer 70 (single layer portion 26) is measured (step S14, first measurement step).
The absorbance is measured using the spectrophotometer 10 described above, and the absorbance L of only the hole injection layer 70 is measured.
In the present embodiment, the absorbance of the hole injection layer 70 in the opening 24b is measured. However, any one of the openings 24a, 24b, and 24c may be measured. The absorbance of each hole injection layer 70 may be measured to calculate an average value.

Next, the organic EL layer 60R is formed (step S15). Here, the organic EL layer 60R is laminated on the hole injection layer 70 over the entire surface of the mother substrate 20 by using a spin coating method (wet film forming method).
Here, the organic EL layer 60 </ b> R is also laminated on the hole injection layer 70 formed on the surface of the partition wall 22.
Furthermore, after applying the liquid material by spin coating, the solvent component is removed by heat drying treatment, so that only the solid component is transferred onto the hole injection layer 70 in the chip region 2 and the hole injection layer 70 in TEG3. Form on top.

Next, the absorbance of the laminated portion 25 composed of the organic EL layer 60R and the hole injection layer 70 is measured (step S16, second measurement step).
The absorbance is measured using the spectrophotometer 10 described above, and the absorbance M of the stacked portion 25 is measured.
In the present embodiment, the absorbance of the stacked portion 25 in the opening 24b is measured. However, any one of the openings 24a, 24b, and 24c may be measured, and each stacked layer in the three openings may be measured. The absorbance of the unit 25 may be measured to calculate an average value.

  Next, the absorbances of the hole injection layer 70 and the organic EL layer 60R are calculated from the absorbances L and M measured in steps S14 and S16. That is, since the absorbance L of only the hole injection layer 70 is measured, the value of the difference between the absorbance M and the absorbance L is calculated as the absorbance of only the organic EL layer 60R.

Next, the film thickness of the organic EL layer 60R is calculated (step S17).
Here, the film thickness is obtained based on the absorbance of the organic EL layer 60R obtained by the above process. The correlation between the film thickness and the absorbance is clarified by FIG. And since the film thickness of the organic EL layer 60R is directly proportional to the absorbance of the organic EL layer 60R, the film thickness of the organic EL layer 60R is obtained from the absorbance of the organic EL layer 60R. be able to.

  As described above, in the present embodiment, since the film thickness is measured using the hole injection layer 70 and the organic EL layer 60 in the TEG 3, holes serving as a component of an actual organic panel are used. There is no need to directly measure the thickness of the injection layer 70 or the organic EL layer 60. Further, even if the hole injection layer 70 or the organic EL layer 60 is irradiated with irradiation light such as ultraviolet rays, these are formed on the TEG 3, so that the hole injection layer 70 or the organic EL in the chip region 2 is formed. The layer 60 is not affected. Therefore, the film thickness of the hole injection layer 70 and the organic EL layer 60 formed in the chip region 2 can be measured using the hole injection layer 70 and the organic EL layer 60 in the TEG 3. Further, the film thickness can be controlled for each of the organic EL device substrates 1 manufactured in a mass production manner.

In the present embodiment, by performing the measurement twice in step S14 and step S16 separately, the absorbance of the single layer portion 26 of the hole injection layer 70 and the stacked portion of the hole injection layer 70 and the organic EL layer 60R are obtained. The absorbance of 25 is measured, and the organic EL layer 60R is measured from these absorbances.
Therefore, even if the absorbance of the single layer of the organic EL layer 60R is not measured, the absorbance of the organic EL layer 60R can be obtained by subtracting the absorbance of the single layer portion 26 from the absorbance of the stacked portion 25. Then, the film thickness of the organic EL layer 60R can be obtained from the absorbance.

In the above embodiments, the method for manufacturing an organic EL panel has been described. However, the present invention can also be applied to a method for manufacturing an organic transistor.
As a material for forming an organic semiconductor layer constituting an organic transistor, C60 and C82, and metal-encapsulated fullerene containing metal (for example, fullerene containing dysprosium (Dy) (hereinafter referred to as Dy @ C82)) Fullerenes such as Pt are preferably used, but other than these, organic low molecules such as pentacene and oligothiophene, organic polymers such as polythiophene, metal complexes such as phthalocyanine, and carbon nanotubes are also used. .
In addition, a voltage control layer that imparts ambipolar characteristics to such an organic semiconductor layer is appropriately selected and used as a formation material according to the formation material of the organic semiconductor layer. Specifically, when the organic semiconductor layer is made of fullerenes, a silane compound is preferably used. As the silane compound, for example, a silane compound represented by a general formula of R1 (CH2) mSiR2nX3-n (m is a natural number, n is 1 or 2) is used. In such a silane compound represented by the general formula, when X is a halogen or an alkoxy group, it is easily chemisorbed on the surface of an oxide such as SiO 2 or Al 2 O 3 that is preferably used as the gate insulating film 14, and is dense and strong. An ultra-thin film (monomolecular film) is formed. As a result, the terminal group R1 is disposed on the surface of the voltage control layer, and thus the chemical affinity with the organic semiconductor layer made of fullerene or the like is increased. R2 is hydrogen, an alkyl group such as a methyl group (—CH3), or a derivative thereof.

  In such a voltage control layer, as a silane compound capable of imparting favorable ambipolar characteristics to an organic semiconductor layer made of fullerenes, for example, in the above formula, R1 is a methyl group (-CH3) or a trifluoromethyl group ( -CF3) is preferred. Further, such a voltage control layer has an effect of controlling the threshold voltage of the organic thin film transistor in addition to imparting ambipolar characteristics to the organic semiconductor layer. Specifically, the threshold voltage characteristics of the organic semiconductor layer can be controlled by appropriately changing R1.

  Moreover, it is applicable not only to the manufacturing method of said organic EL panel and the manufacturing method of an organic transistor but to the manufacturing method of the solar cell which has an organic-semiconductor layer.

The top view of the board | substrate for organic-semiconductor devices of this invention. The cross-sectional enlarged view of the chip | tip area | region in the board | substrate for organic semiconductor devices of this invention. The cross-sectional enlarged view of TEG in the board | substrate for organic semiconductor devices of this invention. The flowchart figure which shows 1st Embodiment of the manufacturing method of the organic-semiconductor device of this invention. The figure explaining 1st Embodiment of the manufacturing method of the organic-semiconductor device of this invention. The figure which shows the correlation of a light absorbency and a film thickness. The flowchart figure which shows 2nd Embodiment of the manufacturing method of the organic-semiconductor device of this invention. The figure explaining 2nd Embodiment of the manufacturing method of the organic-semiconductor device of this invention.

Explanation of symbols

1 substrate for organic EL device (substrate for organic semiconductor device), 2 chip region (predetermined region), 3 TEG (dummy region), 20 mother substrate (substrate), 10 spectrophotometer (absorbance measuring means), 22 partition, 25, 25a, 25b Laminated part, 26 Single layer part, 60, 60R, 60G, 60B Organic EL layer (organic film, second organic film), 70 Hole injection layer (organic film, first organic film), 110 Light emission Functional layer (organic film).

Claims (12)

A method of manufacturing an organic semiconductor device comprising an organic film on a substrate,
A film forming step of forming the organic film on a predetermined region on the substrate and a dummy region set in a portion excluding the predetermined region;
A measurement step of measuring the absorbance of the organic film formed in the dummy region;
Including
Obtaining the thickness of the organic film based on the absorbance measured by the measuring step;
A method of manufacturing an organic semiconductor device characterized by the above. The film forming step includes
Forming a first organic film on the substrate in the dummy region; forming a second organic film on at least a portion of the first organic film;
Including,
The method of manufacturing an organic semiconductor device according to claim 1. The film forming step forms a single layer portion of the first organic film and a stacked portion of the first organic film and the second organic film in the dummy region,
After the film forming step, the measurement step measures the absorbance of the single layer portion and the absorbance of the laminated portion,
Obtaining film thicknesses of the first organic film and the second organic film based on the absorbance measured by the measuring step;
The method for manufacturing an organic semiconductor device according to claim 1, wherein: Prior to the film forming step, including a step of forming a partition that separates the single layer portion and the laminated portion;
The method for manufacturing an organic semiconductor device according to any one of claims 1 to 3, wherein: The measurement step includes
A first measuring step of measuring the absorbance of the first organic film after forming the first organic film in the dummy region;
A second measurement step of measuring the absorbance of the laminated portion of the first organic film and the second organic film after forming the second organic film on all of the first organic films;
Including
Obtaining film thicknesses of the first organic film and the second organic film based on the absorbance measured by the measuring step;
The method for manufacturing an organic semiconductor device according to claim 1, wherein: The measurement step includes
Measuring the fluorescence intensity of the organic film formed in the dummy region,
The method for producing an organic semiconductor device according to claim 1, wherein: The measurement step includes
To be performed by an absorbance measuring means having a microscopic function,
The method for manufacturing an organic semiconductor device according to claim 1, wherein: An organic semiconductor device substrate comprising an organic film on a substrate,
On the substrate, the organic film is formed in a region where an organic semiconductor device is formed and a dummy region formed in a portion excluding the region,
A substrate for an organic semiconductor device. The dummy region has the same shape as a pixel included in a region where the organic semiconductor device is formed;
The substrate for an organic semiconductor device according to claim 8. The dummy region is disposed around a pixel of a film thickness measurement target in a region where the organic semiconductor device is formed;
The substrate for organic semiconductor devices according to claim 8 or 9, wherein A wiring is formed on the substrate,
The dummy region is disposed in a non-formation region of the wiring;
The substrate for an organic semiconductor device according to any one of claims 8 to 10, wherein: A plurality of the dummy regions are formed at predetermined intervals on the substrate;
The substrate for an organic semiconductor device according to claim 8, wherein the organic semiconductor device substrate is a substrate.

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