JP4613637B2 - Method for manufacturing organic electroluminescence element - Google Patents

Description

  The present invention is an organic electroluminescence element (hereinafter, referred to as a flat panel display used for a portable terminal such as a television, a personal computer monitor, a mobile phone, etc.), a surface-emitting light source, illumination, a light-emitting advertising body, and the like. , An organic EL element).

  The organic EL element is expected as a flat panel display that is replaced with a cathode ray tube or a liquid crystal display because of advantages such as a wide viewing angle, a high response speed and low power consumption.

  An organic EL element has a structure in which an organic light emitting medium layer is sandwiched between an anode layer and a cathode layer, and a self-luminous type in which light is emitted from the organic light emitting medium layer by applying a voltage between both electrodes and passing a current. It is a display element. Generally, a transparent electrode is used for the anode layer, and light generated in the organic light emitting medium layer is extracted from the transparent anode layer side.

  There are two types of display drive methods: passive matrix drive and active matrix drive. To increase the size and definition of the display, active matrix drive driven by a switch (TFT) for each pixel can be driven at low voltage. It is. However, the bottom emission element (bottom emission element), in which a TFT and a transparent anode layer are formed on a base material and light is extracted from the transparent anode layer side, has an aperture ratio limited by the TFT or wiring on the base material. There was a problem that the take-out efficiency of the product was lowered.

  On the other hand, in recent years, a top emission element (top emission element) that takes out light from the opposite side of the TFT substrate has been devised. Since the top emission element can have a larger aperture ratio than the conventional bottom emission element, the light extraction efficiency is improved (see Patent Document 1). As means for extracting light from the opposite side of the TFT substrate, a method of forming the cathode layer as a transparent electrode, a method of reversing the order of forming the anode layer and the cathode layer on the substrate, and the like are known.

  Of these, according to the former method of converting the cathode layer to a transparent electrode, it is necessary to use a material having both transmittance and resistivity for the cathode layer. It is difficult to meet. Therefore, it has been considered to use ITO, which has been conventionally used for the anode as a transparent electrode, as a cathode material. However, it is not preferable to use ITO alone because electron injection properties are impaired. Therefore, after forming a thin film of a low work function metal material with excellent electron injection properties on the organic light emitting medium layer within a range that does not affect the transmittance, a transparent electrode such as ITO having excellent transmittance and low efficiency is obtained. It has been known that a cathode layer having both electron injecting property, translucency, and low resistance can be formed by forming an electrode structure laminated on top.

  However, since ITO used as a transparent electrode layer is generally formed on an organic light emitting medium layer by a film forming method using plasma such as a sputtering method, the plasma generating part of the sputtering apparatus is used when forming the transparent electrode layer. There has been a problem that the organic light emitting medium layer is damaged by the flying plasma, and the light emission efficiency of the manufactured organic EL element is lowered.

Also, in the method of reversing the order of forming the anode layer and the cathode layer on the latter substrate, a transparent electrode is formed on the organic light emitting medium layer by a film forming method using plasma, such as a sputtering method. Similar to the former method, there is a problem that the organic light emitting medium layer is damaged by plasma.
Japanese Patent Laid-Open No. 2001-43980

  The present invention has been made to solve the above-mentioned problems, and the object of the present invention is to provide an element in which an organic light emitting medium layer is not damaged in the production of a top-emitting element (top emission element) and a manufacturing method thereof. And providing an organic EL device with high luminous efficiency.

  By the way, according to the study of the present inventor, a substrate-side electrode is formed on a substrate of an organic EL element, and an organic light emitting medium layer and a partition wall having conductivity are formed on the substrate-side electrode layer. When the sealing electrode is formed by sputtering while forming the partition wall at the ground potential, charged particles (hereinafter referred to as plasma) generated from the sputtering apparatus are applied to the grounded conductive partition wall. It was found that the organic light-emitting medium layer was absorbed and reduced in damage. Further, at this time, it was found that the effect of reducing the damage of the organic light emitting medium layer is further enhanced by simultaneously using a mask having a specific form. For this reason, an organic EL element with high luminous efficiency could be manufactured.

The present invention was made based on such knowledge, and the invention according to claim 1 is characterized in that the organic light emitting medium layer is sandwiched between a sealing side electrode layer and a substrate side electrode layer having translucency, In the method for producing an organic electroluminescent element, at least (a) a step of forming a base material side electrode layer on the base material, (b) a step of performing an insulation treatment on a part of the base material side electrode layer, (c ) A step of forming a conductive partition by forming a conductive material on a portion of the substrate-side electrode layer that has been subjected to an insulation treatment; and (d) no insulation treatment is performed on the substrate-side electrode layer. A step of forming an organic light emitting medium layer on the portion; (e) a step of forming a sealing-side electrode layer on the organic light emitting medium layer by sputtering while keeping the conductive partition wall at ground potential. Organic electroluminescence characterized by containing It is a manufacturing method for the device.

According to the second aspect of the present invention, in the step of forming the sealing side electrode layer while grounding the partition wall having conductivity (e), the step of forming the sealing side electrode layer is performed by a sputtering method. The pattern of the partition wall having conductivity and the mask having the opening pattern of the same shape are arranged between the partition wall having conductivity and the plasma generating part of the sputtering apparatus with the pattern orientation aligned. 2. The method of manufacturing an organic electroluminescence element according to claim 1, wherein the sealing-side electrode layer is formed while relatively moving the mask and the pattern of the partition wall having conductivity. .

According to a third aspect of the present invention, in the step of forming the sealing-side electrode layer while grounding the partition wall having conductivity (e), the step of forming the sealing-side electrode layer is performed by a sputtering method. A mask having an opening pattern with a smaller area than the pattern of the conductive partition wall portion is disposed between the conductive partition wall portion and the plasma generating portion of the sputtering apparatus; and 2. The organic electroluminescence element manufacturing method according to claim 1, wherein the sealing-side electrode layer is formed while relatively moving the pattern of the partition wall having conductivity .

  ADVANTAGE OF THE INVENTION According to this invention, in manufacture of a top emission type organic EL element (top emission element), there exists an effect that an organic light emitting medium layer is not damaged by a plasma. Thereby, an organic EL element with high luminous efficiency can be manufactured.

  The present invention is the best embodiment which has been intensively studied to solve the above problems, and will be described below with reference to FIG. 1 and FIG. 2 as an example of the organic EL device according to the present invention. It is not limited to.

  Hereinafter, as an example of the organic EL device according to the present invention, a case where a base material / anode layer (base material side electrode layer) / organic light emitting medium layer / transparent cathode layer (sealing side electrode layer) are laminated in this order is shown in FIG. Based on The present invention is not limited to this configuration, and may be base material / cathode layer (base material side electrode layer) / organic light emitting medium layer / transparent anode layer (sealing side electrode layer). Moreover, you may use a transparent electrode for both an anode layer and a cathode layer.

  Below, an example of the manufacturing method of the organic EL element of this invention is shown.

  First, the base material 1 is prepared, the base material side electrode layer 2 is formed on the base material 1, and patterning is performed (FIG. 1 (a)). In order to reduce the wiring resistance of the substrate-side electrode layer 2, a metal material such as copper or aluminum may be provided on the substrate 1 as an auxiliary electrode. As a method of forming the substrate-side electrode layer 2 on the substrate 1, dry film forming methods such as resistance heating vapor deposition, electron beam vapor deposition, reactive vapor deposition, ion plating, and sputtering, or gravure printing For example, a wet film forming method such as a screen printing method or the like can be used. As a patterning method for the substrate-side electrode layer 2, an existing patterning method such as a mask vapor deposition method, a photolithography method, a wet etching method, or a dry etching method can be used.

  The material of the substrate 1 used in the present invention is preferably selected according to the light extraction direction. In order to extract light from the substrate 1 side, a substrate having translucency is used. For example, glass, quartz, polypropylene, polyethersulfone, polycarbonate, cycloolefin polymer, polyarylate, polyamide, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, etc., or these plastic films and sheets Metal oxide such as silicon oxide and aluminum oxide, metal fluoride such as aluminum fluoride and magnesium fluoride, metal nitride such as silicon nitride and aluminum nitride, metal oxynitride such as silicon oxynitride, acrylic resin and epoxy A base material in which a polymer resin film such as a resin, a silicone resin, or a polyester resin is laminated in a single layer or a laminate can be used. In the case where light is not extracted from the substrate 1 side, a metal foil or sheet such as aluminum or stainless steel, or a silicon substrate can be used in addition to the above-described substrate having translucency. In addition, a non-light-transmitting base material in which a metal film such as aluminum, copper, nickel, and stainless steel is stacked on the above base material can be used.

If necessary, a thin film transistor (TFT) may be formed on the substrate 1 and used as a driving substrate. As the TFT material, organic TFTs such as polythiophene, polyaniline, copper phthalocyanine, and perylene derivatives may be used, and amorphous silicon or polysilicon TFTs may be used.
The base material 1 more preferably reduces the moisture adsorbed on the inside or the surface of the base material as much as possible. Therefore, it is desirable to perform heat treatment in advance. Moreover, in order to improve the adhesiveness of the substrate surface, it is preferable to perform surface treatment such as ultrasonic cleaning treatment, corona discharge treatment, plasma treatment, UV ozone treatment on the substrate. Moreover, you may provide a color filter layer, a light-scattering layer, a light deflection layer, a planarization layer, etc. on a base material as needed.

  As the material of the substrate-side electrode layer 2 according to the present invention, it is preferable to use a low-resistance material that does not impair the hole injection property to the organic light emitting medium layer. Specifically, metal oxides such as indium oxide and tin oxide, metal composite oxides such as ITO (indium tin composite oxide), indium zinc composite oxide, zinc aluminum composite oxide, gold, and platinum are used. be able to. Alternatively, a single layer or a laminate of fine particle dispersion films in which fine particles of the above materials are dispersed in an epoxy resin, an acrylic resin, or the like can be used.

  Subsequently, a partition wall 3 having conductivity is formed and patterned (FIG. 1B). As a method of forming and patterning the partition 3 having conductivity, a photolithography method, a printing method such as screen printing or gravure printing, an ink jet method, a transfer method, a vapor deposition method, or the like can be used. The thickness of the partition wall layer 3 is preferably about 1 to 50 μm, and more preferably about 5 to 20 μm so that charged particles can be captured as much as possible in the upper part of the organic EL element portion. At this time, if the film thickness is too thin, the flying plasma cannot be captured sufficiently. On the other hand, if the film thickness is too thick, there arises a problem that the sealing-side electrode layer 5 is not formed on the bottom of the partition wall 3.

  The conductive partition wall 3 is provided to reduce damage to the organic light emitting medium layer from plasma during the formation of the sealing-side electrode. Therefore, it is sufficient to achieve the object of the present invention if it has conductivity in at least a portion irradiated with plasma in the partition wall 3 having conductivity. On the other hand, if the entire partition wall 3 having conductivity is conductive, there is a problem that the substrate-side electrode layer 2 and the sealing-side electrode 5 are short-circuited. For this reason, it is preferable that the electrically conductive partition wall 3 has a multilayer structure in which the portion in contact with the substrate-side electrode layer 2 is insulative and only the upper part (sealing side) is electrically conductive. Further, a part of the base-side electrode layer 2 was subjected to insulation treatment by a method such as removing a part of the base-side electrode layer 2 or forming an insulating film on a part of the base-side electrode layer 2. Thereafter, a conductive material may be formed on the insulated portion on the substrate-side electrode layer 2 to form the partition wall 3 having conductivity.

  Hereinafter, a case where the partition wall 3 having conductivity has a two-layer structure, an insulating layer is used for the lower one layer as an insulating portion, and a conductive material is used for the upper one layer as a conductive portion will be exemplified. In the insulating part, a polymer resin such as epoxy resin, acrylic resin, polyimide resin, cresol resin, phenol resin, or the like, which is given photosensitivity, thermosetting property, photocuring property, or silicon oxide, aluminum oxide, A metal compound such as silicon nitride can be used. In the conductive part, a metal material such as gold, silver, aluminum and chromium, a metal composite oxide such as indium tin oxide, a conductive material such as carbon, or fine particles made of these conductive materials are dispersed inside. A polymer resin can be used.

  Subsequently, an organic light emitting medium layer 4 is formed between the conductive partition wall patterns (FIG. 1c).

  The organic light emitting medium layer 4 in the present invention can be formed of a single layer film or a multilayer film containing a light emitting substance. In the case of forming with a multilayer film, for example, a two-layer structure including a hole transport layer and an electron transport layer, or a three-layer structure including a hole transport layer, a light emitting layer, and an electron transport layer can be employed. Furthermore, it is more preferable to insert a layer that blocks the hole (electron) injection function and the hole (electron) transport function and blocks the hole (electron) transport into the multilayer film.

  As described above, when the organic light emitting medium layer has a three-layer structure including a hole transport layer, a light emitting layer, and an electron transport layer, examples of the hole transport material include copper phthalocyanine, tetra (t-butyl) copper phthalocyanine, and the like. Metal phthalocyanines and metal-free phthalocyanines, quinacridone compounds, 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane, N, N′-diphenyl-N, N′-bis (3-methylphenyl) Fragrances such as -1,1′-biphenyl-4,4′-diamine, N, N′-di (1-naphthyl) -N, N′-diphenyl-1,1′-biphenyl-4,4′-diamine Group amine-based low-molecular-weight hole-injecting and transporting materials, polyaniline, polythiophene, polyvinylcarbazole, poly (3,4-ethylenedioxythiophene) and polystyrenesulfonic acid Polymer hole transporting materials such as goods, and the like can be used polythiophene oligomer materials.

  As the light-emitting material, 9,10-diarylanthracene derivatives, pyrene, coronene, perylene, rubrene, 1,1,4,4-tetraphenylbutadiene, tris (8-quinolinolato) aluminum complex, tris (4-methyl-8-) Quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (4-methyl-5-trifluoromethyl-8-quinolinolato) aluminum complex, tris (4-methyl-5-cyano-8-quinolinolato) aluminum complex, Bis (2-methyl-5-trifluoromethyl-8-quinolinolato) [4- (4-cyanophenyl) phenolate] aluminum complex, bis (2-methyl-5-cyano-8-quinolinolato) [4- (4- Cyanophenyl) phenolate] aluminum complex, tri (8-quinolinolato) scandium complex, bis [8- (para-tosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene, poly-2,5- Diheptyloxy-para-phenylene vinylene, coumarin phosphor, perylene phosphor, pyran phosphor, anthrone phosphor, porphyrin phosphor, quinacridone phosphor, N, N'-dialkyl-substituted quinacridone phosphor , Naphthalimide-based phosphors, N, N′-diaryl-substituted pyrrolopyrrole-based phosphors, low-molecular light-emitting materials such as phosphorescent phosphors such as Ir complexes, polyfluorene, polyparaphenylene vinylene, polythiophene, polyspiro, etc. Of these low molecular weight materials. Or copolymerized material and can be used other existing luminescent materials.

  As an electron transport material, 2- (4-bifinylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole, 2,5-bis (1-naphthyl) -1,3, 4-oxadiazole, an oxadiazole derivative, a bis (10-hydroxybenzo [h] quinolinolato) beryllium complex, a triazole compound, or the like can be used.

  The film thickness of the organic light-emitting medium layer 4 is 1000 nm or less, preferably 50 to 250 nm, even when formed by a single layer or a stacked layer. Moreover, since the hole transport material of the polymer EL element has a large effect of covering the surface protrusions of the base material and the anode layer, it is more preferable to form a film with a thickness of about 100 to 250 nm.

  As a method for forming the organic light emitting medium layer 4, a vacuum deposition method, a coating method such as spin coating, spray coating, flexo, gravure, micro gravure, intaglio offset, a printing method, an ink jet method, or the like can be used. When the polymer light emitting medium layer is made into a solution, it is preferable to control the vapor pressure, solid content ratio, viscosity, etc. of the solvent according to the forming method. Solvents include water, xylene, anisole, cyclohexanone, mesitylene, tetralin, cyclohexylbenzene, methyl benzoate, ethyl benzoate, toluene, ethanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, methanol, isopropyl alcohol, ethyl acetate, butyl acetate, etc. These may be a single solvent or a mixed solvent. In order to improve coatability, it is more preferable to mix an appropriate amount of additives such as surfactants, antioxidants, viscosity modifiers and ultraviolet absorbers as necessary. As a method for drying the coating solution, it is sufficient to remove the solvent to such an extent that the EL characteristics are not hindered.

  Next, the sealing side electrode layer 5 is formed (FIG. 1d). Although the case where the sealing side electrode layer 5 is a cathode layer is shown below, it is not limited to this.

The sealing-side electrode layer 5 as the cathode needs to have both electron injecting properties and translucency when extracting light from the sealing. For this reason, it is more preferable that the sealing-side electrode layer 5 has a two-layer configuration of the electron injection layer 51 and the transparent electrode layer 52.
The material of the electron injection layer 51 constituting the sealing-side electrode layer 5 is required to have a high electron injection efficiency into the organic light emitting medium layer 4, such as an alkali metal or alkali having a low work function such as Li, Ca, Cs, and Ba. An earth metal, an oxide compound, a fluoride compound, or a nitride compound of these metals can be laminated on the organic light emitting medium layer 4 and used. The material for the electron injection layer may be used by doping the organic electron transport material in a small amount. The thickness of the electron injection layer needs to be in a range that does not hinder the transmittance, and is preferably about 0.1 to 50 nm, and more preferably 10 nm or less. As a method for forming the electron injection layer 51, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, or the like can be used for the organic light emitting medium layer 4. It is particularly preferable to use a vapor deposition method with little damage.

  The material of the transparent electrode layer 52 constituting the sealing electrode layer 5 is required to be excellent in both transparency and resistivity. Specifically, it is desirable to use a metal composite oxide such as ITO (indium tin composite oxide), indium zinc composite oxide, or zinc aluminum composite oxide. There is no restriction | limiting in particular as a film thickness of the transparent electrode layer 52, About 10 nm-about 1000 nm are preferable, Furthermore, about 100 nm is more preferable. As a method for forming the transparent electrode layer 52, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, or a sputtering method can be used depending on the material. In particular, in order to obtain a transparent electrode layer excellent in translucency and conductivity, it is more preferable to use a sputtering method.

  By the way, when a known sputtering method such as a DC magnetron sputtering method, an RF magnetron sputtering method, or a counter target sputtering method, which is generally used, is used for forming an electrode of an organic EL element, the sealing-side electrode layer is formed. The plasma damages the organic light emitting medium layer 4 and causes a reduction in the light emission efficiency of the organic EL element. Therefore, in the present invention, as shown in FIG. 2, a conductive partition and a mask 6 having a predetermined pattern are used. Here, the mask does not shield the sputtering apparatus and the film formation proceeds (FIG. 2B), and the mask shields the sputtering apparatus and the film formation does not proceed (FIG. 2A). Intermittent film formation is repeated alternately. By using a conductive partition wall and a mask together, it is possible to effectively capture plasma that damages the organic light emitting medium layer, reducing damage to the organic light emitting medium layer, and sealing the transparent electrode It can form into a film as a side electrode layer. In the intermittent film forming method, the positional relationship between the mask 6 and the partition wall having conductivity may be relatively moved in parallel to the mask surface or the substrate surface. Specifically, the substrate 1 may be fixed and the mask 6 may be reciprocally swung, or the mask 6 may be fixed and the substrate 1 may be transported to form a film. For example, when the conductive partition wall 3 is formed in a stripe pattern, the mask is also formed in the same stripe pattern, the orientation of the conductive partition wall 3 and the stripe pattern of the mask is matched, and the base material 1 is aligned in the direction of the stripe pattern. It is preferable to form a film while transporting in the vertical direction. In order to capture the plasma efficiently, the mask 6 is preferably at the ground potential.

The mask of the present invention captures plasma flying from a sputtering apparatus and protects the organic light emitting medium layer from the plasma. The mask material should be at least electrically conductive, such as stainless steel, aluminum, iron, chromium, nickel, invar material (iron, nickel, cobalt alloy), or an insulating material, or these metals and alloys. Any material whose surface is coated can be used. In particular, it is preferable to use an invar material having high strength and low thermal expansion. The thickness of the mask can be arbitrarily selected within the scope of the object of the present invention. However, if the thickness of the mask is too thick, many target atoms flying from the sputtering apparatus are captured, and the film formation rate of the sealing-side electrode layer decreases. On the other hand, if it is too thin, the plasma flying from the sputtering apparatus cannot be captured, and the effect of protecting the organic light emitting medium layer from the plasma is weakened. The mask pattern is preferably formed in accordance with the pattern of the conductive partition formed on the base material, but the mask pattern is slightly smaller than the pattern. As an area, the plasma blocking effect may be enhanced.

  Example 1 and Comparative Examples 1 and 2 based on the embodiment will be described with reference to FIGS.

<Example 1>
Glass was used as the substrate 1, and an ITO film was formed as a substrate-side electrode layer 2 with a thickness of 150 nm on the substrate 1 by a sputtering method, and then the ITO film was patterned by a photolithography method and a wet etching method (see FIG. 1 (a)).
Next, as a partition wall 3 having conductivity, a cresol resin having positive photosensitivity is patterned on the substrate-side electrode layer 2 by using a photolithography method, and the line pattern of the partition wall having a height of 5 μm is provided. Formed. Further, a chromium film having a thickness of 300 nm was formed on the entire surface of the substrate by a sputtering method. Further, a chromium film was formed in the same pattern as the pattern of the cresol resin by a photolithographic etching method to form a partition wall 3 having a two-layered conductivity.
Next, on the substrate side electrode layer 2, as the organic light emitting medium layer 4, the hole transport layer is a mixture of poly (3,4-ethylenedioxythiophene) and polystyrene sulfonic acid (20 nm thickness), and the light emitting layer is Poly [2-methoxy-5- (2′-ethyl-hexyloxy) -1,4-phenylene vinylene] (MEHPPV) (100 nm thickness) was formed by spin coating (FIG. 1 (c)).
Next, a Ca film having a thickness of 5 nm was formed on the organic light emitting medium layer 4 as the electron injection layer 51 of the sealing electrode layer.
Next, an ITO film having a thickness of 100 nm was formed by sputtering as the transparent electrode layer 52 on the organic light emitting medium layer 4 on which the Ca film was formed (FIG. 1D). At this time, as shown in FIG. 2, an ITO film was formed while being conveyed on the stainless steel mask 6 while grounding the chromium film on the upper layer of the partition wall 3 having conductivity. In the opening of the mask, the same pattern as the partition wall having conductivity is formed.
As a result of applying a voltage of 7 V to the produced organic EL element, light emission with a luminance of about 10000 cd / m 2 was confirmed from both sides of the substrate side electrode layer and the sealing side electrode layer.

<Reference Example 1>
An organic EL element manufactured in the same manner as in Example 1 except that an Ag film was selected as a material for the sealing-side electrode layer 5 (cathode), and the film was formed to a thickness of 100 nm by a vacuum evaporation method without using a sputtering method. As a result of applying a voltage of 7 V, light emission with a luminance of about 10000 cd / m 2 was confirmed from the substrate side electrode side. From this, it was confirmed that the organic EL element produced in Example 1 can obtain the same luminance as the organic EL element of this reference example produced without using plasma. It was confirmed that the organic light emitting medium layer of the produced organic EL element was not damaged by plasma.

<Comparative Example 1>
As a result of applying a voltage of 7 V to the organic EL device produced in the same manner as in Example 1 except that the mask 6 is not used when forming the sealing-side electrode layer 5, the luminance is increased from both sides of the anode layer and the cathode layer. Light emission of 2000 cd / m 2 was confirmed. From this, it was found that by forming the ITO film as the sealing electrode layer without using the mask by sputtering, the organic light emitting medium layer was damaged by the plasma, and the light emission efficiency was reduced to 1/5.

<Comparative Example 2>
An organic EL element was prepared in the same manner as in Example 1 except that the conductive partition wall 3 was not provided and only a cresol resin was used instead to prepare a copper-shaped partition pattern in Example 1. As a result of applying a voltage of 7 V to the organic EL element, light emission with a luminance of 2000 cd / m 2 was confirmed from both sides of the anode layer and the cathode layer. From this, it was found that by forming the ITO film as the sealing electrode layer without using the mask by sputtering, the organic light emitting medium layer was damaged by the plasma, and the light emission efficiency was reduced to 1/5.

<Comparative Example 3>
Example 1 except that the partition wall 3 having the same shape as that of Example 1 was prepared by using only the cresol resin instead of providing the partition wall 3 having conductivity, and that the ITO film was formed without installing the mask 6. An organic EL device was prepared in the same manner as in 1. As a result of applying a voltage of 7 V to the organic EL element, light emission with a luminance of 2000 cd / m 2 was confirmed from both sides of the anode layer and the cathode layer. From this, it was found that by forming the ITO film as the sealing electrode layer without using the mask by sputtering, the organic light emitting medium layer was damaged by the plasma, and the light emission efficiency was reduced to 1/5.

It is sectional drawing which shows an example of the polymer EL element of this invention, and a manufacturing method. It is sectional drawing which shows an example of the manufacturing method of the polymer EL element of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Base material 2 Base material side electrode layer 3 Conductive partition 4 Organic luminescent medium layer 5 Sealing side electrode layer 51 Charge injection layer 52 Transparent electrode layer 6 Mask

Claims (3)

In the method for producing an organic electroluminescence element, in which the organic light emitting medium layer is sandwiched between the light-transmitting sealing side electrode layer and the base material side electrode layer, at least,
(A) forming a substrate-side electrode layer on the substrate;
(B) a step of performing an insulation treatment on a part of the substrate-side electrode layer;
(C) a step of forming a conductive partition by forming a conductive material on a portion of the substrate-side electrode layer that has been subjected to an insulation treatment;
(D) forming an organic light-emitting medium layer on a portion of the substrate-side electrode layer that is not insulated;
(E) the while the ground potential partition wall having conductivity, by sputtering, the organic light emitting medium step of forming a sealing-side electrode layer on the layer, organic electroluminescent device comprising the Manufacturing method. In the step of forming the sealing-side electrode layer while grounding the partition wall having conductivity (e),
The step of forming the sealing electrode layer is performed by sputtering,
Between the partition wall portion having conductivity and the plasma generating portion of the sputtering apparatus, the pattern of the partition wall portion having conductivity and the mask having the opening pattern of the same shape are arranged with the pattern direction aligned,
While relatively moving the pattern of the partition wall having the conductive and the mask, and forming a sealing-side electrode layer, a method of manufacturing an organic electroluminescent device according to claim 1, wherein. In the step of forming the sealing-side electrode layer while grounding the partition wall having conductivity (e),
The step of forming the sealing electrode layer is performed by sputtering,
A mask having an opening pattern smaller in area than the pattern of the partition wall having conductivity is disposed between the partition wall having conductivity and the plasma generation unit of the sputtering apparatus,
While relatively moving the pattern of the partition wall having the conductive and the mask, and forming a sealing-side electrode layer, a method of manufacturing an organic electroluminescent device according to claim 1, wherein.

Images