JP2007194061A - Organic electroluminescent element and manufacturing method of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic electroluminescent element forming a base material; a first electrode, an organic light emitting media layer including an organic light emitting layer, and a second electrode formed on the base material; and an inorganic sealing layer formed on the second electrode; prevented from generation and spread of defect for a long period by providing the inorganic sealing layer excellent in a barrier property and free from defect. <P>SOLUTION: The manufacturing method of an organic electroluminescent element comprises a process of forming the inorganic sealing layer having an inorganic sealing film composed of either a silicon oxide, a silicon nitride, or a silicon oxynitride on the second electrode, and a process of applying a plasma treatment on a surface of the inorganic sealing film by using fluorine-containing gas. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention is an organic electroluminescence element (hereinafter, referred to as a flat panel display used for a portable terminal such as a television, a personal computer monitor, a mobile phone, etc.), a surface-emitting light source, illumination, a light-emitting advertising body, and the like. , An organic EL element) and a manufacturing method thereof.

  The organic EL element is expected as a flat panel display that replaces a cathode ray tube or a liquid crystal display because of advantages such as that a display image can be viewed with a wide viewing angle, a response speed of the display image is fast, and low power consumption.

  An organic EL element has a structure in which an organic light emitting medium layer is sandwiched between two electrode layers (an anode layer and a cathode layer) in which at least one of the electrodes has translucency, and a voltage is applied between both electrodes. It is a self-luminous display element that emits light in an organic light emitting medium layer when an applied current is applied. However, since the organic EL element has a problem that it deteriorates due to the influence of moisture and oxygen in the atmosphere, a method of covering with a metal can or glass cap containing a desiccant and blocking from the atmosphere is generally used. .

  In recent years, in order to improve the light extraction efficiency of the active matrix type organic EL element, a top surface light emitting element that takes out light from the sealing member side has been proposed, and it is changed to a glass cap sealing containing a conventional desiccant, Sealing in which a sealing layer having a barrier property, an adhesive, and a light-transmitting sealing substrate are directly laminated without providing a space has been proposed (Patent Document 1).

  Further, even in an organic EL element using a plastic film instead of a glass substrate as a supporting substrate, a sealing layer having excellent barrier properties is required as a method for shielding the organic EL element from the atmosphere.

  Since an excellent barrier property is required for the sealing layer of the organic EL element, an inorganic film such as silicon oxide or silicon nitride is generally used. However, since such an inorganic film is deposited while reflecting the base during the film growth process, steps such as organic EL element electrodes, substrate protrusions, and particles, vacancies and pinholes in the film Once film defects such as cracks and cracks are formed, the film defects are not eliminated even if the film is thickened or laminated.

  As a means to solve this problem, by inserting an organic resin layer between the inorganic laminated films, covering the substrate unevenness and defects formed in the inorganic film are blocked by the organic resin film, and the defect position of the inorganic laminated film is shifted. Has been proposed (Patent Document 2). However, there is a problem in mass production such that it is necessary to provide an organic resin film forming chamber separately, it is difficult to clean the organic resin film forming chamber, and particles are easily generated. In addition, this method has a problem in that the barrier properties of the organic EL element cannot be satisfied unless the layers are laminated with five or six layers because defects remain in each inorganic film.

The known literature is described below.
JP 2002-231443 A JP 2004-103442 A

  An object of the present invention is to produce an organic electroluminescence device free from defects and extending over a long period of time by providing a defect-free inorganic sealing film having excellent barrier properties.

  The present inventors have performed plasma processing on the formed inorganic sealing film, in particular, film defects such as vacancies, pinholes and cracks in the inorganic sealing film by performing plasma processing using a fluorine-containing gas. It was found that an inorganic sealing film free from pinholes and cracks was obtained.

  Accordingly, the invention according to claim 1 of the present invention includes a base material, a first electrode on the base material, an organic light emitting medium layer including an organic light emitting layer on the first electrode, and the organic light emitting medium. In the method of manufacturing an organic electroluminescent element, the second electrode is formed so as to face the first electrode across the layer, and the inorganic sealing layer is formed on the second electrode. An organic electroluminescent element manufacturing method comprising: forming a film; and performing a plasma treatment on a surface of the inorganic sealing film.

  The invention according to claim 2 of the present invention is characterized in that the fluorine-containing gas is used in the step of plasma-treating the surface of the inorganic sealing film. Is the method.

  The invention according to claim 3 of the present invention includes a step of forming an inorganic sealing film on the plasma processing film of the inorganic sealing film after forming the plasma-treated inorganic sealing film. A method for producing an organic electroluminescent element according to claim 1 or claim 2.

  According to a fourth aspect of the present invention, the step of forming the inorganic sealing film and the step of performing plasma treatment on the surface of the inorganic sealing film are repeated a plurality of times. 4. The method for producing an organic electroluminescence device according to any one of 3 above.

  According to a fifth aspect of the present invention, the inorganic sealing film is any one of silicon oxide, silicon nitride, and silicon oxynitride. It is a manufacturing method of the organic electroluminescent element of 1 item | term.

  The invention according to claim 6 of the present invention includes a base material, a first electrode on the base material, an organic light emitting medium layer including an organic light emitting layer on the first electrode, and the organic light emitting medium. In the organic electroluminescent element which provided the 2nd electrode so that a 1st electrode might be pinched | interposed on both sides of the layer, and provided the inorganic sealing layer on this 2nd electrode, By the manufacturing method in any one of Claims 1 thru | or 5 An organic electroluminescence element comprising an inorganic sealing layer.

  The invention according to claim 7 of the present invention is characterized in that the second electrode has translucency, and an adhesive layer and a translucent substrate are provided on the inorganic sealing layer. Item 7. The organic electroluminescence device according to Item 6.

According to the present invention, by plasma-treating the surface of the inorganic sealing film, a plasma-treated layer having no film defects such as vacancies, pinholes and cracks in the film can be formed, and the barrier property is excellent. A passivation film could be provided, and a long-life organic EL element could be manufactured.

  An example of the organic EL device and the method for producing the same according to the present invention will be described with reference to FIG. 1, but is not limited thereto. FIG. 1 is a sectional side view showing an embodiment of the method for producing an organic EL device of the present invention.

  The material of the substrate 1 is preferably selected according to the emission direction of light emission. For example, when light is to be extracted, glass, quartz, polypropylene, polyethersulfone, polycarbonate, cycloolefin polymer, polyarylate, Plastic films and sheets such as polyamide, polymethyl methacrylate, polyethylene terephthalate and polyethylene naphthalate, or metal oxides such as silicon oxide and aluminum oxide, and metal fluorides such as aluminum fluoride and magnesium fluoride are added to these plastic films and sheets. Translucent with single layer or stacked layers of metal nitride such as fluoride, silicon nitride, aluminum nitride, metal oxynitride such as silicon oxynitride, polymer resin film such as acrylic resin, epoxy resin, silicone resin, polyester resin Base material It can be used. When light is not extracted, in addition to the above-mentioned translucent substrate, a metal foil such as aluminum or stainless steel, a sheet, a silicon substrate, or a metal film such as aluminum, copper, nickel or stainless steel is applied to the plastic film or sheet. A laminated non-translucent base material or the like can be used.

  The base material may be used as a driving substrate by forming a thin film transistor (TFT) if necessary. As the TFT material, organic TFTs such as polythiophene, polyaniline, copper phthalocyanine, and perylene derivatives may be used, and amorphous silicon or polysilicon TFTs may be used. There are a passive matrix type and an active matrix type as a driving method of the organic EL element, but the organic EL element of the present invention can be applied to either a passive matrix type organic EL element or an active matrix type organic EL element. . The passive matrix method is a method in which stripe-shaped electrodes are opposed to each other so as to be orthogonal to each other, and light is emitted at the intersection, whereas the active matrix method uses a so-called TFT substrate in which a thin film transistor (TFT) is formed for each pixel. Thus, the light is emitted independently for each pixel.

  Moreover, it is more preferable that these base materials reduce the water | moisture content adsorb | sucked in the base material inside or the surface as much as possible by performing heat processing previously. Moreover, in order to improve adhesiveness according to the material laminated | stacked on a base material, it is preferable to perform surface treatments, such as an ultrasonic cleaning process, a corona discharge process, a plasma process, and UV ozone process. In addition, a color filter layer, a light scattering layer, a light deflection layer, a planarization layer, or the like may be provided as necessary.

  First, in FIG. 1A, a first electrode 2 as a lower electrode is formed on a substrate 1, and patterning is performed as necessary. Here, the first electrode 2 may be hole-injecting or electron-injecting, and may be a light-transmitting electrode or a reflecting electrode depending on the light extraction direction. Hereinafter, the case of a translucent hole injection electrode will be described.

  Examples of the translucent hole injection electrode material include metal oxides such as indium oxide and tin oxide, metal composite oxides such as ITO (indium tin composite oxide), indium zinc composite oxide, and zinc aluminum composite oxide. A single layer or a laminate of metal materials such as gold and platinum, or fine particle dispersion films in which fine particles of these metal oxides or metal materials are dispersed in an epoxy resin or an acrylic resin can be used. If necessary, a metal material such as copper or aluminum may be provided as an auxiliary electrode in order to reduce the wiring resistance of the lower electrode layer 2.

  Depending on the material, the first electrode 2 may be formed by a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, a sputtering method or other dry film forming method, a gravure printing method, a screen. A wet film forming method such as a printing method can be used. As a patterning method of the first electrode 2, an existing patterning method such as a mask vapor deposition method, a photolithography method, a wet etching method, or a dry etching method can be used depending on a material and a film forming method.

  Next, in FIG. 1B, the organic light emitting medium layer 3 including the organic light emitting film 31 is formed. The organic light emitting medium layer 3 in the present invention can be formed as a single layer or a multilayer of the organic light emitting layer 31 containing a light emitting substance. Examples of the configuration in the case of forming in multiple layers include a hole transport layer, an electron transport organic light emitting layer or a hole transport organic light emitting layer, a two layer structure comprising an electron transport layer, a hole transport layer 32, an organic light emitting layer 31. , A three-layer structure composed of the electron transport layer 33, and further, if necessary, a layer that separates a hole (electron) injection function and a hole (electron) transport function, or blocks a hole (electron) transport. It is more preferable to form a multilayer by inserting.

  Examples of the material of the hole transport layer 32 include metal phthalocyanines and metal-free phthalocyanines such as copper phthalocyanine and tetra (t-butyl) copper phthalocyanine, quinacridone compounds, 1,1-bis (4-di-p-tolyl) Aminophenyl) cyclohexane, N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine, N, N′-di (1-naphthyl) Aromatic amine-based low molecular hole injection and transport materials such as -N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine, polyaniline, polythiophene, polyvinylcarbazole, poly (3,4-ethylene Polymer hole transport materials such as a mixture of dioxythiophene) and polystyrene sulfonic acid, polythiophene oligomer materials, and other existing hole transport materials It can be selected from the material.

  Examples of the material for the organic light emitting layer 31 include 9,10-diarylanthracene derivatives, pyrene, coronene, perylene, rubrene, 1,1,4,4-tetraphenylbutadiene, tris (8-quinolinolato) aluminum complex, tris (4- Methyl-8-quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (4-methyl-5-trifluoromethyl-8-quinolinolato) aluminum complex, tris (4-methyl-5-cyano-8-quinolinolato) ) Aluminum complex, bis (2-methyl-5-trifluoromethyl-8-quinolinolato) [4- (4-cyanophenyl) phenolate] aluminum complex, bis (2-methyl-5-cyano-8-quinolinolato) [4 -(4-Cyanophenyl) phenolate] aluminium Complex, tris (8-quinolinolato) scandium complex, bis [8- (para-tosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene, poly-2 , 5-diheptyloxy-para-phenylene vinylene, coumarin phosphor, perylene phosphor, pyran phosphor, anthrone phosphor, porphyrin phosphor, quinacridone phosphor, N, N′-dialkyl-substituted quinacridone -Based phosphors, naphthalimide-based phosphors, N, N'-diaryl-substituted pyrrolopyrrole-based phosphors, phosphorescent phosphors such as Ir complexes, and other low-molecular light-emitting materials, polyfluorene, polyparaphenylene vinylene, polythiophene , Polymer materials such as polyspiro, and these polymer materials Materials and dispersed or copolymerized child materials can be used other existing luminescent materials.

  Examples of the material for the electron transport layer 33 include 2- (4-bifinylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, 2,5-bis (1-naphthyl). -1,3,4-oxadiazole, oxadiazole derivatives, bis (10-hydroxybenzo [h] quinolinolato) beryllium complexes, triazole compounds, and the like can be used.

The film thickness of the organic light emitting medium layer 3 is 1000 n even when formed by a single layer or a stacked layer.
m or less, preferably 50 to 150 nm. In particular, the material of the hole transport layer 32 of the organic EL element has a large effect of covering the surface protrusions of the base material and the anode layer, and it is more preferable to form a film having a thickness of about 50 to 100 nm. As a method for forming the organic light emitting medium layer 3, a vacuum deposition method, a coating method such as spin coating, spray coating, flexo, gravure, micro gravure, intaglio offset, a printing method, an ink jet method, or the like is used depending on the material. Can do. When the organic light emitting medium layer is made into a solution, it is preferable to control the vapor pressure, solid content ratio, viscosity, and the like of the solvent according to the forming method. Solvents include water, xylene, anisole, cyclohexanone, mesitylene, tetralin, cyclohexylbenzene, methyl benzoate, ethyl benzoate, toluene, ethanol, acetone, methyl ethyl ketone, methyl isobutyl ketone, methanol, isopropyl alcohol, ethyl acetate, butyl acetate, etc. These may be a single solvent or a mixed solvent. In order to improve coatability, it is more preferable to mix an appropriate amount of additives such as surfactants, antioxidants, viscosity modifiers and ultraviolet absorbers as necessary. As a method for drying the coating solution, it is sufficient to remove the solvent to such an extent that the EL characteristics are not hindered, and it may be heated, decompressed, or heated and decompressed.

  Next, in FIG. 1C, the second electrode 4 is formed. The material of the second electrode 4 as the upper electrode layer may be either hole injecting or electron injecting in the same manner as the first electrode 2, and may be used as a translucent electrode depending on the light extraction direction. It is good also as a reflective electrode. Hereinafter, the case of a non-transparent electron injection electrode will be described as an example.

  As a material for the electron injection electrode, a substance having high electron injection efficiency into the organic light emitting medium layer 3 is used. Specifically, a single metal such as Mg, Al, or Yb is used, or a compound such as Li, oxidized Li, or LiF is sandwiched by about 1 nm at the interface contacting the light emitting medium, and Al or Cu having high stability and conductivity is laminated. May be used. Alternatively, in order to achieve both electron injection efficiency and stability, one or more metals such as Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, and Yb having a low work function and stable Ag, Al An alloy system with a metal element such as Cu or Cu may be used. Specifically, alloys such as MgAg, AlLi, and CuLi can be used. When used as a light-transmitting electron injecting electrode layer, a thin work piece of Li and Ca having a low work function is provided, and then ITO (indium tin composite oxide), indium zinc composite oxide, zinc aluminum composite oxide, etc. A metal oxide such as ITO may be laminated on the organic light emitting medium layer 3 by doping a small amount of a metal such as Li or Ca having a low work function.

  As a method for forming the second electrode layer, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, or a sputtering method can be used depending on the material. Although there is no restriction | limiting in particular in the thickness of a 2nd electrode, About 10 nm-1000 nm are desirable. Moreover, when using as a translucent electron injection electrode layer, when using metal materials, such as Ca and Li, about 0.1-10 nm is desirable for film thickness.

  Next, in FIG. 1D, an inorganic sealing film 51 is formed. The inorganic sealing film 51 is intended to prevent deterioration of the organic light emitting layer such as the organic light emitting layer, the first electrode, and the second electrode due to intrusion of moisture and oxygen from the outside into the organic EL element.

  Examples of the inorganic sealing layer 51 include metal oxides such as silicon oxide and aluminum oxide, metal fluorides such as aluminum fluoride and magnesium fluoride, metal nitrides such as silicon nitride and aluminum nitride, and metals such as silicon oxynitride. Metal carbides such as oxynitride and silicon carbide can be used. In particular, it is preferable to use silicon nitride, silicon oxide, or silicon oxynitride having excellent barrier properties. In the silicon nitride, silicon oxide, and silicon oxynitride films, hydrogen and carbon are sometimes contained in the film formation method, but they can be used as necessary.

As a method for forming the inorganic sealing film 51, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, a sputtering method, and a CVD method can be used depending on the material. It is preferable to use a CVD method in terms of barrier properties. As the CVD method, a thermal CVD method, a plasma CVD method, a catalytic CVD method, a VUV-CVD method, or the like can be used. In addition, as a reaction gas in the CVD method, a gas such as N ₂ , O ₂ , NH ₃ , H ₂ , or N ₂ O is added to an organic silane such as monosilane, disilane, hexamethyldisilazane (HMDS), or tetraethoxysilane. It can be added as necessary. In these films, hydrogen and carbon remain in the films depending on the reactive gas used. The film thickness of the barrier layer varies depending on the electrode step of the organic EL element, the height of the partition walls of the substrate, the required barrier properties, and the like, but is preferably 10 nm to 10 μm, and more preferably 100 nm to 1000 nm. However, if the residual stress of the film is large, the organic EL element peels off, and therefore the residual stress of the inorganic sealing film is preferably 100 MPa or less.

Next, in FIG. 1E, the surface of the inorganic sealing film 51 is subjected to plasma processing to form a plasma processing film 52 of the inorganic sealing film. This plasma treatment is intended to repair film defects such as pinholes and cracks generated in the inorganic sealing film. Gases used for plasma include perfluorocarbons such as CF ₄ and C ₂ F ₆ , hydrofluorocarbons such as CF ₃ CHF ₂ , carbon-containing fluorides such as COF ₂ and CF ₃ CN, F ₂ , NF ₃ , and SF. Etching rate on the surface of the inorganic sealing film can be controlled by using a non-carbon fluoride such as ₆ as a main component and using a dilution gas such as oxygen, argon gas, N ₂ gas, etc. as necessary. Film defects formed in the vicinity of the surface of the silicon film or silicon oxide film can be repaired to form an inorganic sealing film plasma treatment film 52 free of film defects such as vacancies, pinholes and cracks in the film. Although the optimum value of the mixing ratio of the fluorine-containing gas varies depending on the gas used, it is preferably about 1 to 50%, and more preferably 10% or less.

  Finally, in FIG. 1 (f), by forming the sealing substrate 7 through the adhesive layer 6, it is possible to prevent damage to the inorganic sealing film due to external impact. Since the inorganic sealing film 5 is formed, there is no need to use a conventional cap seal containing a desiccant.

  Further, by using a light-transmitting substrate such as glass as the sealing substrate 7, it can be used as a sealing structure of a top light emitting element that extracts light from the sealing substrate side. However, in the case of a conventional bottom surface light emitting element, the sealing substrate does not need to be translucent, and may be a metal foil or sheet such as Al, or a plastic film on which a metal is deposited, an inorganic oxide film or an inorganic nitride film. A barrier film on which a film is formed can be used.

  Examples of the material of the adhesive layer 6 include a photo-curing adhesive resin made of an epoxy resin, an acrylic resin silicone resin, a thermosetting adhesive resin, and a thermoplastic adhesive resin made of an acid-modified product such as polyethylene or polypropylene. Can be used. As a method of forming the adhesive layer 6, depending on the material and pattern, a coating method such as spin coating, spray coating, flexo, gravure, micro gravure, intaglio offset, printing method, ink jet method, laminating method, transfer method, etc. Can be used. Although there is no restriction | limiting in particular in the thickness of the contact bonding layer 6, Since the thinner one can reduce the permeation | transmission amount of a water | moisture content, about 5-50 micrometers is preferable.

  2A and 2B are side sectional views of an embodiment of the organic EL element of the present invention.

  In FIG. 1E, an inorganic sealing film may be provided on the surface of the plasma processing film 52 of the inorganic sealing film that has been subjected to the plasma processing. At this time, the newly formed inorganic sealing film forming material may be the same as the formed inorganic sealing film forming material, or another film forming material may be used. FIG. 2A shows a structure in which an inorganic sealing film 52 is laminated on the inorganic sealing layer 5, and the organic EL element of the present invention with improved barrier properties.

  In FIG. 1 (e), by further repeating the step of forming the inorganic sealing film and the step of performing the plasma treatment on the formed inorganic sealing film, holes and pinholes in the film, An inorganic sealing film free from cracks can be obtained, and the barrier properties of the inorganic sealing layer can be further improved. In FIG. 2B, the organic EL element of the present invention has a structure in which the inorganic sealing layer 5 has two layers, and the barrier property is further improved.

  Examples 1 to 3 based on the embodiment of the present invention will be described with reference to FIG.

  Glass was used as the substrate 1, an ITO film having a thickness of 150 nm was formed on the substrate 1 as the first electrode 2 of the anode by a sputtering method, and patterning was performed using a photolithographic etching method. Next, as the organic light emitting medium layer 3, a mixture (20 nm) of poly (3,4-ethylenedioxythiophene) and polystyrenesulfonic acid is used for the hole transport layer, and poly [2-methoxy-5- ( 2′-ethyl-hexyloxy) -1,4-phenylene vinylene] (MEHPPV) (100 nm) was formed by spin coating. Next, as the second electrode 4 of the cathode, a Ca film (5 nm) and an Al film (100 nm) were stacked by vapor deposition.

Next, as an inorganic sealing film, a silicon nitride film was formed to a thickness of 200 nm using a plasma CVD method. Here, since SiH ₄ and H ₂ , N ₂ , and NH ₃ were used as the plasma reaction gas, it was a silicon nitride film containing about 10% of H atoms. Further, using the Ar gas mixed with 5% of NF ₃ gas, the inorganic sealing film surface is subjected to plasma treatment to form the inorganic sealing layer 5 including the inorganic sealing film 51 and the plasma processing film 52 of the inorganic sealing film. did.

  As a result of storing the produced organic EL element for 1000 hours at 60 ° C. and 90% RH, the emission area was reduced to about 80% in terms of the initial area ratio due to the generation and expansion of dark spots (DS) and deterioration from the edge of the electrode. .

An organic EL element similar to that of Example 1 was produced, an inorganic sealing film made of silicon nitride was formed on the inorganic sealing layer 5 subjected to plasma treatment, and NF ₃ gas was formed on the formed inorganic sealing film. Plasma treatment of the surface of the inorganic sealing film was performed using Ar gas mixed with 5%. Even if the produced organic EL element was stored at 60 ° C. and 90% RH for 1000 hours, the emission area was hardly reduced, and the initial area ratio was 95% or more.

  An organic EL element is produced in the same manner as in Example 1, and a thermosetting epoxy resin (10 μm) is used as the adhesive layer 6 on the plasma-treated inorganic sealing layer 5 and glass (0.5 mm) is sealed. The organic EL element was protected by bonding the base material 7 together. Even if the produced organic EL device was stored at 60 ° C. and 90% RH for 2000 hours, the emission area did not decrease and the initial area remained at 100%.

  Examples 4 to 5 are carried out as comparative examples of the present invention and will be described with reference to FIG.

  In Example 4, the organic EL device described in Example 1 did not emit light as a result of being stored on the surface of the inorganic sealing film without plasma treatment for 1000 hours at 60 ° C. and 90% RH.

In Example 5, in the organic EL device described in Example 3, the adhesive layer and the glass were laminated without forming the inorganic sealing layer 5. The produced organic EL element is stored for 2000 hours at 60 ° C. and 90% RH. As a result, DS is generated / expanded and the end of the electrode is deteriorated due to moisture in the resin and externally transmitted moisture. The area ratio decreased to about 50%.

It is a sectional side view which shows one Example of the manufacturing method of the organic EL element of this invention. It is side sectional drawing of one Example of the organic EL element of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Base material 2 ... 1st electrode 3 ... Organic light emitting medium layer 31 ... Organic light emitting layer 32 ... Hole transport layer 33 ... Electron transport layer 4 ... Second electrode 5 ... Inorganic sealing layer 51 ... Inorganic sealing film 52 ... Plasma treatment film 6 (of inorganic sealing film) ... Adhesive layer 7 ... Sealing substrate

Claims (7)

A substrate, a first electrode on the substrate, an organic light emitting medium layer including an organic light emitting layer on the first electrode, and a second electrode so as to face the first electrode with the organic light emitting medium layer interposed therebetween In the method for producing an organic electroluminescent element, in which an electrode is formed and an inorganic sealing layer is formed on the second electrode,
A method for producing an organic electroluminescent element, wherein the inorganic sealing layer is formed by a step of forming an inorganic sealing film and a step of performing a plasma treatment on the surface of the inorganic sealing film.   The method for producing an organic electroluminescent element according to claim 1, wherein a fluorine-containing gas is used in the step of plasma-treating the surface of the inorganic sealing film.   3. The method according to claim 1, further comprising a step of forming an inorganic sealing film on the plasma processing film of the inorganic sealing film after forming the plasma-treated inorganic sealing film. Manufacturing method of organic electroluminescent element.   The process for forming the inorganic sealing film and the step for performing plasma treatment on the surface of the inorganic sealing film are repeated a plurality of times. Method.   5. The method of manufacturing an organic electroluminescence element according to claim 1, wherein the inorganic sealing film is any one of silicon oxide, silicon nitride, and silicon oxynitride. A substrate, a first electrode on the substrate, an organic light emitting medium layer including an organic light emitting layer on the first electrode, and a second electrode so as to face the first electrode with the organic light emitting medium layer interposed therebetween In an organic electroluminescence element provided with an electrode and provided with an inorganic sealing layer on the second electrode,
An organic electroluminescence device comprising an inorganic sealing layer provided by the manufacturing method according to claim 1.   The organic electroluminescence device according to claim 6, wherein the second electrode has a light-transmitting property, and an adhesive layer and a light-transmitting substrate are provided on the inorganic sealing layer.

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