JP2011204366A - Method for manufacturing organic electroluminescent panel and organic electroluminescent panel using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable organic EL panel formed by removing foreign matter mixed in a manufacturing process, reducing expansion of a dark spot in a foreign matter removing part, and reducing the number of non-light emitting pixels, and to provide the organic EL panel using the same.SOLUTION: In the method for manufacturing the organic electroluminescent panel, at least a substrate, a first electrode layer on the substrate, an organic light-emitting medium layer including an organic light-emitting layer on the first electrode layer, a second electrode layer so as to be opposite to the first electrode layer across the organic light-emitting medium layer, and a passivation layer on the second electrode layer are laminated in this order. This method includes: a dry etching process of the second electrode layer after forming the second electrode layer; a process in which inert gas is sprayed on a surface of the second electrode layer after the dry etching process; and furthermore, a process in which the passivation layer is laminated on the second electrode layer.

Description

  The present invention relates to a method for producing an organic electroluminescence panel and an organic electroluminescence panel using the same.

  Organic electroluminescence panels are expected to be used in a wide range of applications such as flat panel displays and lighting used in televisions, personal computer monitors, mobile devices and the like. Unlike a liquid crystal display or the like, the organic electroluminescence panel is a self-luminous type. Therefore, it can be used for CRTs and liquid crystal displays because it can be made extremely thin structurally, and the display image can be viewed with a wide viewing angle, the response speed of the display image is fast, low power consumption, and high contrast can be expected. It is expected as an alternative flat panel display.

  FIG. 1 schematically shows a cross-sectional structure of an organic electroluminescence panel according to the prior art. The organic electroluminescence panel has a first electrode layer 12 and a second electrode layer 14 in which at least one of the electrodes has translucency on a substrate 11 made of glass or plastic, and organic light emission is provided between the electrode layers. In this structure, the medium layer 13 is sandwiched. This is a self-luminous display panel in which light is emitted from the organic light-emitting medium layer 13 by applying a voltage between both electrode layers and passing a current.

  Here, the organic light emitting medium layer is a layer including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. Examples include copper phthalocyanine for the hole injection layer, (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (PEDOT / PSS) for the hole transport layer, and tris (8-quinolinol) aluminum for the organic light emitting layer. The electron transport layer includes 2,5-bis (1-naphthyl) -1,3,4 oxadiazole, and the electron injection layer includes lithium fluoride. In addition, using a material that shines in three colors of red, blue, and green as the light-emitting layer, it can be expressed as a display if it is coated in the partition wall 19, and an extremely thin display with a thin film structure is manufactured. Is possible.

  Since the organic electroluminescence element has a problem that it deteriorates due to the influence of oxygen and water in the atmosphere, the oxygen and water are blocked by the passivation layer 15 and further adhered by a metal can or glass cap 17 containing a desiccant 18. A method of sealing with the layer 16 and blocking from the atmosphere is generally used. Here, the passivation layer preferably has a high barrier property against oxygen and water, and is preferably insulative because it is formed on the cathode, for example, silicon nitride. Moreover, an epoxy-type resin is mentioned as an adhesion layer, A calcium oxide is mentioned as a desiccant.

  However, since the organic electroluminescence panel has a thickness from the first electrode to the second electrode of only about 1 μm, the presence of a foreign substance having the same thickness as this causes a light emission failure and enlarges or turns off the dark spot. Defects such as pixel generation will occur. However, it is difficult to completely remove foreign substances from the process.

For example, Patent Document 1 proposes a method of burning out foreign matter and wiring by laser repair, for the above-described light emission defect caused by foreign matter generated in the organic electroluminescence panel manufacturing process. However, foreign matter generated during laser irradiation may further adversely affect the surrounding pixels, and it is difficult in the manufacturing process to detect extremely small foreign matter (1 μm or less) that cannot be confirmed with a microscope when laser irradiation is performed. There is a problem.

  In order to prevent a short circuit due to foreign matter mixed in the organic electroluminescence panel, for example, in Patent Document 2, after a protective film is formed on the second electrode, the exposed portion of the second electrode where the foreign matter adheres is provided. A method of breaking by dry etching has been proposed. However, there is a problem that the expansion of light-emitting defects of the organic electroluminescence panel cannot be suppressed because the dark spot is enlarged due to foreign matters and the effect of the passivation layer is reduced.

JP 2007-42498 A JP 2008-287889 A

  As described above, in order to improve the reliability of the organic electroluminescence panel, it is important to remove foreign substances in the process and suppress the generation of non-light emitting pixels having a size that can be recognized with the naked eye.

  Therefore, the present invention has been made in view of the above problems, and removes foreign matters mixed in the manufacturing process without reducing the original performance of the organic electroluminescence panel, thereby suppressing the expansion of dark spots in the foreign matter removing portion. It is an object of the present invention to provide a highly reliable organic electroluminescence panel manufacturing method and an organic electroluminescence panel using the same by reducing non-light emitting pixels.

The invention according to claim 1 of the present invention includes at least a substrate, a first electrode layer on the substrate, an organic light emitting medium layer including an organic light emitting layer on the first electrode layer, and the organic light emitting medium layer. In the manufacturing method of the organic electroluminescence panel in which the second electrode layer is disposed so as to face the first electrode layer and the passivation layer is laminated on the second electrode layer in this order,
A step of dry etching the second electrode layer after the formation of the second electrode layer, and a step of blowing an inert gas onto the surface of the second electrode layer after the dry etching step; And laminating the second electrode layer on the second electrode layer.

  The invention according to claim 2 of the present invention is the organic electroluminescence panel according to claim 1, wherein the dry etching step is an isotropic dry etching step capable of etching the second electrode layer. It is a manufacturing method.

  Further, the invention according to claim 3 of the present invention has a step of forming a second electrode layer again after the inert gas spraying step, wherein the organic electroluminescence panel according to claim 1 or 2 is provided. It is a manufacturing method.

  Further, in the invention according to claim 4 of the present invention, when there is a foreign substance under the second electrode layer, the second electrode on the foreign substance is disconnected in the dry etching process, and the foreign substance is injected in an inert gas blowing process. The organic electroluminescence panel according to any one of claims 1 to 3, wherein the second electrode layer is formed again and the second electrode is connected to the place where the foreign matter is removed, and the second electrode is connected. Is the method.

  In addition, the invention according to claim 5 of the present invention is characterized in that the passivation layer is formed by chemical vapor deposition (CVD) and covers the concave portion of the second electrode layer formed at a position where foreign matter has fallen off. The method for producing an organic electroluminescence panel according to claim 1.

  The invention according to claim 6 of the present invention is characterized in that after the dry etching step of the second electrode layer, minute foreign substances on the surface of the second electrode layer are removed by argon plasma treatment. 2 or 4 is a method for producing an organic electroluminescence panel.

  Next, the invention according to claim 7 of the present invention is an organic electroluminescence panel manufactured by applying the method of manufacturing an organic electroluminescence panel according to any one of claims 1 to 6. is there.

  According to the method for manufacturing an organic electroluminescence (hereinafter abbreviated as EL) panel of the present invention, an isotropic etching process is performed after the second electrode layer is formed, so that it is mixed in the layers below the second electrode layer in the manufacturing process. The second electrode at the thinned portion on the foreign matter can be removed, and then the foreign matter can be removed by blowing an inert gas. In addition, a passivation layer having a good barrier property is formed even at a place where the foreign matter is eliminated. Alternatively, the second electrode layer is formed again at the place where the foreign matter is eliminated, and a passivation layer is further laminated thereon. By passing through such a process, a foreign substance is removed from the panel whole surface, and the organic EL panel without the dark spot and non-light-emitting pixel of the magnitude | size which can be recognized with the naked eye can be provided.

It is a schematic diagram which shows an example of the organic electroluminescent panel by a prior art in a cross section. It is a schematic diagram which shows an example of the organic electroluminescent panel which concerns on this invention in a cross section. It is a cross-sectional schematic diagram explaining the foreign material mixed under the 2nd electrode layer with the manufacturing method which concerns on this invention. In the manufacturing method which concerns on this invention, it is a cross-sectional schematic diagram explaining the state which disconnected the 2nd electrode on the foreign material after a 2nd electrode layer etching by the dry etching process. It is a cross-sectional schematic diagram explaining the state from which the foreign material was removed after the inert gas spraying process with the manufacturing method which concerns on this invention. It is a cross-sectional schematic diagram explaining the state which laminated | stacked the 2nd electrode again from the foreign material removal process, and formed the passivation layer, the contact bonding layer, and the sealing substrate by the manufacturing method which concerns on this invention.

  A method for producing an organic EL panel of the present invention will be described below with reference to FIGS. In the following description, a bottom emission structure is taken as an example, but the present invention can also be applied to a top emission structure.

  FIG. 2 schematically shows a cross-sectional configuration of an example of the organic EL panel according to the present invention. As the substrate 21, for example, an insulating substrate such as glass or plastic film can be used.

  These substrates 21 are desirably heat-treated in advance to reduce the moisture inside or on the substrate as much as possible. Further, in order to improve the adhesion, depending on the material laminated on the substrate 21, it is preferable to use after performing surface treatment such as ultrasonic cleaning treatment, corona discharge treatment, plasma treatment, and UV ozone treatment. .

  Further, a thin film transistor (TFT) may be formed on the substrate to form a driving substrate. As a material for the TFT, a material such as polythiophene, polyaniline, copper phthalocyanine, or perylene derivative may be used, or amorphous silicon or polysilicon may be used. In addition, a color filter layer, a light scattering layer, a light polarizing layer, or the like may be provided on either side of the substrate.

  First, the first electrode layer 22 is formed on the substrate 21. The first electrode layer 22 applies a voltage to the organic light emitting medium layer 23 together with the second electrode layer 24. Since a voltage is applied to each pixel, the first electrode layer 22 can be patterned into a stripe. On the other hand, the second electrode layer 24 can be patterned into stripes so as to intersect the first electrode layer 22.

  At least one of the first electrode layer 22 and the second electrode layer 24 needs to be a transparent electrode. This is for extracting light emitted from the organic light emitting medium layer 23. For example, ITO (indium tin composite oxide) or IZO (indium zinc composite oxide) can be used for the first electrode layer 22. As a film forming method, a vacuum film forming method can be used, and a film can be formed using a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, a sputtering method, or the like.

  After the first electrode layer 22 is formed, the partition walls 25 are formed by photolithography using a photosensitive material between adjacent anode patterns. More specifically, it includes at least a step of applying a photosensitive resin composition to a substrate and a step of forming a partition wall pattern by pattern exposure, development, and baking.

  The photosensitive material for forming the partition wall 25 may be either a positive type resist or a negative type resist, and may be a commercially available one, but it needs to have insulating properties. If the partition wall does not have sufficient insulation, a current flows to the adjacent pixel electrode through the partition wall, resulting in a display defect. Also, proper display may not be possible due to TFT malfunction. Specific examples of the photosensitive material include, but are not limited to, polyimide, acrylic resin, novolac resin, and fluorene. Further, for the purpose of improving the display quality of the organic EL display, a light shielding material may be included in the photosensitive material.

  The photosensitive resin forming the partition walls 25 is applied using a known coating method such as a spin coater, bar coater, roll coater, die coater, or gravure coater. Next, in the step of pattern exposure and development to form the partition wall pattern, the partition wall pattern can be formed by a conventionally known exposure and development method. Regarding firing, firing can be performed by a conventionally known method using an oven, a hot plate or the like.

  The partition wall 25 desirably has a thickness in the range of 0.5 μm to 5.0 μm. This can prevent color mixing with adjacent pixels when performing separate coating for each pixel using an organic light emitting ink in which organic light emitting materials having different luminescent colors are dissolved or dispersed in a solvent. Note that if the partition wall is too low, the effect of preventing leakage current between adjacent pixels, prevention of short-circuiting, and prevention of color mixing of the organic light emitting ink may not be obtained.

Next, the organic light emitting medium layer 23 includes an organic light emitting layer that emits light upon application of a voltage. Although it may be constituted by a single layer composed of the organic light emitting layer, it may be constituted by a laminated structure in which a light emitting auxiliary layer for improving luminous efficiency is laminated in addition to the light emitting layer. Examples of the light emission auxiliary layer include a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer.

  Typical examples of the organic medium layer 23 include metal phthalocyanines and metal-free phthalocyanines such as copper phthalocyanine and tetra (t-butyl) copper phthalocyanine, quinacridone compounds, 1,1-bis (4 -Di-p-tolylaminophenyl) cyclohexane, N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'-biphenyl-4,4'-diamine, N, N'- Aromatic amine-based low molecules such as di (1-naphthyl) -N, N′-diphenyl-1,1′-biphenyl-4,4′-diamine can be used.

  Examples of the hole transport layer include polyaniline, polythiophene, polyvinyl carbazole, poly (3,4-ethylenedioxythiophene), poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (PEDOT / PSS).

  As the organic light emitting layer, 9,10-diarylanthracene derivatives, pyrene, coronene, perylene, rubrene, 1,1,4,4-tetraphenylbutadiene, tris (8-quinolinolato) aluminum complex, tris (4-methyl-8- Quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (4-methyl-5-trifluoromethyl-8-quinolinolato) aluminum complex, tris (4-methyl-5-cyano-8-quinolinolato) aluminum complex, Bis (2-methyl-5-trifluoromethyl-8-quinolinolato) [4- (4-cyanophenyl) phenolate] aluminum complex, bis (2-methyl-5-cyano-8-quinolinolato) [4- (4- Cyanophenyl) phenolate] aluminum complex, tri (8-quinolinolato) scandium complex, bis [8- (para-tosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene, poly-2,5- Diheptyloxy-para-phenylene vinylene, coumarin phosphor, perylene phosphor, pyran phosphor, anthrone phosphor, porphyrin phosphor, quinacridone phosphor, N, N'-dialkyl-substituted quinacridone phosphor , Naphthalimide-based phosphors, N, N′-diaryl-substituted pyrrolopyrrole-based phosphors, phosphorescent phosphors such as Ir complexes, and other low-molecular light-emitting materials, polyfluorene, polyparaphenylenevinylene, polythiophene, polyspiro, etc. Of these low molecular weight materials. Or copolymerized material and can be used other existing luminescent materials.

  These organic light emitting medium layers 23 are formed by dry coating or wet coating depending on their molecular properties. As the wet coating method, there are a spin coating method, a bar coating method, a protruding coating method, a dip coating method, and the like. As the dry coating method, a vacuum film forming method can be used, a resistance heating evaporation method, an electron beam evaporation method, and the like. The film can be formed using a reactive vapor deposition method, an ion plating method, a sputtering method, or the like.

  Subsequently, the second electrode layer 24 is formed. Examples include, but are not limited to, simple metals such as lithium, magnesium, calcium, ytterbium, and aluminum, and alloys of these with stable metals such as gold, silver, and the like. A film can be formed using a vacuum film formation method. Examples thereof include resistance heating vapor deposition, electron beam vapor deposition, reactive vapor deposition, ion plating, and sputtering.

As shown in FIG. 3, at the time when the second electrode layer 34 is formed, if a foreign material 36 exists in the structure of the element, a light emitting defect such as a dark spot or a non-light emitting pixel occurs in the produced organic EL panel. Or it may cause problems such as short circuit. Moreover, the said foreign material weakens the effect of a passivation layer and causes the fall of the sealing performance of an organic electroluminescent panel. For this reason, after forming the second electrode layer 34, a foreign matter removing process such as dry etching described below is performed, so that the above-described light emitting defects, the effect of the passivation layer and the sealing performance can be suppressed. .

  Subsequently, the second electrode layer 34 is dry etched. For example, a gas such as chlorine, boron chloride, or carbon tetrafluoride is used, which is selected depending on the material of the second electrode layer, and isotropic etching is preferably used. This is because when a step is generated in the second electrode layer due to the foreign matter, the portion that is thinned at the end of the step cannot be etched by anisotropic etching. Therefore, methods that can be employed include chemical dry etching, barrel type plasma etching, parallel plate type plasma etching, inductively coupled RF plasma, ECR plasma, and the like. Further, when the treatment is actually performed, as shown in FIG. 3, it is necessary to etch the thinned portion 37 at the end of the foreign material 36 until the surface of the foreign material is exposed. It is desirable to etch about 10% to 20%. Further, depending on the type of the electrode layer, the chemical etching as described above and the treatment of the substrate surface with argon plasma or the like can be combined to remove residual foreign matters at the time of etching. In these etching and plasma processing steps, the portion irradiated with the plasma is limited to the second electrode layer, the foreign matter portion, and the dark spot portion generated by removing the foreign matter, and thus does not affect the normal portion of the organic electroluminescence panel. Further, the dark spots generated by the removal of the foreign matter are suppressed from being enlarged by passivation described later.

  Subsequently, as shown in FIG. 4, an inert gas such as helium or argon is blown from the etched surface of the second electrode layer until the surface of the foreign matter is exposed. In this case, since the purpose is to remove foreign substances, a clean and high-purity one is desirable. Further, it is desirable that the gas pressure is about 0.5 MPa as a foreign matter removing ability.

  As shown in FIG. 5, after removing the foreign matter, the foreign matter removal trace 56 remains and the second electrode layer 54 is disconnected. Therefore, the second electrode layer is formed again as shown in FIG. The made second electrode layer can be connected.

  After the above steps, the passivation layer 25 can be formed on the second electrode layer 24 by using a vacuum film forming method. Examples thereof include resistance heating vapor deposition, electron beam vapor deposition, reactive vapor deposition, ion plating, sputtering, and CVD. Here, since it is necessary to cover the concave portion of the foreign matter removing portion, it is desirable to use a CVD method with good coverage, but it is also possible to form a film in combination with other film forming methods.

  In addition, if the absolute value of the residual film stress of the passivation layer is large, peeling of the organic EL element occurs and the barrier property is impaired, so at least the low-density inorganic sealing film has a film stress of 100 MPa or less. It is also preferable that the absolute value of the total accumulated film stress is 100 MPa or less even in an inorganic sealing film that is a laminated film of a low-density film and a high-density film. Also, in the case of controlling the accumulated stress of the laminated film, it is desirable that the first layer film is a CVD method that can select a film having a stress as low as possible.

Examples of the material deposited by the CVD method include silicon nitride, silicon oxide, silicon nitride oxide, diamond-like carbon, and the like, but are not limited thereto. In addition, as a reaction gas in the CVD method, a gas such as N ₂ , O ₂ , NH ₃ , H ₂ , or N ₂ O is added to organic silane such as monosilane, disilane, hexamethyldisilazane (HMDS), or tetraethoxysilane. It can be added as necessary. In addition, other film forming methods such as a vapor deposition method can be used in combination as the buffer layer, or these layers can be stacked to be multilayered.

The total thickness of the passivation layer is preferably 1 μm to 10 μm. In particular, although the concave portion formed by removing the foreign substance becomes a dark spot, the passivation layer is laminated to such an extent that the expansion can be suppressed.

Subsequently, an adhesive layer 27 is formed using the adhesive layer, and a sealing substrate 28 is stacked thereon and sealed. A thermosetting adhesive layer can also be used as the adhesive layer 27, but a photocurable adhesive layer is preferable in consideration of the influence on the organic electroluminescence panel. For example, radical adhesive layer using various acrylates such as ester acrylate, urethane acrylate, epoxy acrylate, melamine acrylate, acrylic resin acrylate, etc., resin such as urethane polyester, cation using resin such as epoxy, vinyl ether, etc. And a thiol / ene addition type resin adhesive layer. Among them, a cationic adhesive layer that is not inhibited by oxygen and that undergoes a polymerization reaction even after light irradiation is preferable. As the cationic curable type, an ultraviolet curable epoxy resin adhesive layer is preferable. Particularly preferred is an ultraviolet curable adhesive layer that cures within 10 seconds to 90 seconds when irradiated with ultraviolet rays of 100 mW / cm ² or more. By curing within this time range, the ultraviolet curable adhesive layer can be sufficiently cured and provided with appropriate adhesive strength without causing adverse effects on other components due to ultraviolet irradiation. Moreover, it is preferable that it is in the said time range also from a viewpoint of the efficiency of a production process. Regardless of the type of the adhesive layer 27, a material having low moisture permeability and high adhesiveness is desirable. Examples of methods for forming a resin layer on a passivation layer include solvent solution method, extrusion lamination method, melting / hot melt method, calendar method, nozzle coating method, screen printing method, vacuum laminating method, hot roll laminating method, etc. Can be mentioned. Although there is no restriction | limiting in particular as thickness of the contact bonding layer 27, It is preferable that it is a thin layer as much as possible, and is about 1 micrometer-100 micrometers, Preferably it is 5 micrometers-50 micrometers.

  As the sealing substrate 28, a plastic film such as glass, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN) can be used.

  Examples of the present invention will be described below. In the following embodiments, the reference numerals used in the description of FIG. 2 described above will be used for the same function parts.

<Example 1>
As the substrate 21, a TFT substrate including a first electrode layer 22, an extraction electrode, an insulating layer made of an SiNx film for protecting the TFT circuit, and an insulating layer made of polyimide was used in advance. In this TFT substrate, an insulating layer made of polyimide is formed so as to partition pixels, and also functions as a partition wall 25 of each pixel.

  Next, a 20 nm thick hole transport layer made of a mixture of poly (3,4 ethylenedioxythiophene) and polystyrenesulfonic acid was formed on the first electrode layer 22 by spin coating.

  Next, poly [2-methoxy-5- (2′-ethyl-hexyloxy) -1,4-phenylene burene], which is an organic light emitting material, is dissolved in toluene on the hole transport layer, and organic by spin coating. A light emitting layer was formed, and an organic light emitting medium layer 23 having a thickness of 80 nm was formed together with the hole transport layer.

  Next, the second electrode layer 24 made of Ba and Al was formed to have a thickness of 5 nm and 50 nm, respectively, by Ba by vapor deposition and Al by resistance heating vapor deposition.

Next, the second electrode layer was etched by a parallel plate type plasma etching method. Etching conditions were as follows: boron trichloride and chlorine were introduced at 1: 1, and the total pressure was 0.2 Pa and the high frequency power was 600 W. Further, the surface of the electrode layer was subjected to plasma treatment with 0.2 Pa of argon plasma at a power of 100 W and a flow rate of 100 sccm for removing foreign matter on the electrode layer, and then 0.5 MPa of argon gas was blown over the entire surface of the substrate to remove the exposed foreign matter.

  Next, the second electrode layer 24 made of Ba and Al was again formed with a thickness of 5 nm and a thickness of 200 nm by Ba by vapor deposition and Al by resistance heating vapor deposition, respectively.

Subsequently, a passivation layer 28 made of silicon nitride was formed by plasma CVD to a thickness of 3000 nm with SiH ₄ : 80 sccm, NH ₃ : 20 sccm, H ₂ : 700 sccm, N ₂ : 1000 sccm, a total pressure of 100 Pa, and a power of 800 W.

  Next, an adhesive layer 27 was formed on the passivation layer 26 using an ultraviolet curable adhesive layer, a sealing substrate 28 made of flat glass was bonded, and sealed by irradiation with UV of 5000 mJ.

When the number of foreign substances in the organic EL panel thus obtained was observed with a 200-pixel microscope, no foreign substance having a size of 2 μm or more was observed. As a result of applying a voltage of 7 V to the panel, a luminance of 3200 cd / m ² was obtained and the current efficiency was 5 cd / A. Further, no non-light emitting pixels were observed, but dark spots were observed at 5 pixels when observed with a microscope. Further, 60 ° C. and 90% R.I. H. When the sample was left under for 1500 hours, the number of non-light-emitting pixels was not observed, and no dark spots were observed.

<Example 2>
Similarly to Example 1, an organic EL panel was formed on the TFT substrate up to the second electrode layer, etching was performed under the same conditions, and argon gas was blown over the entire surface of the substrate at 0.5 MPa without performing argon plasma treatment. . Thereafter, a second electrode layer, a passivation layer, and an adhesive layer were formed again under the same conditions as in Example 1, and sealed with flat glass. When the number of foreign substances in the organic EL panel thus obtained was observed with a 200-pixel microscope, no foreign substance having a size of 2 μm or more was observed. As a result of applying a voltage of 7 V to the panel, a luminance of 3300 cd / m ² was obtained, and the current efficiency was 5 cd / A. In addition, a dark spot was observed on the pixel having no foreign matter, which was considered to be an influence of a residue at the time of etching. H. When the sample was left under 1500 hours, enlargement was not observed and the number of non-light emitting pixels was not observed.

<Example 3>
As in Example 1, the organic EL panel is formed on the TFT substrate up to the second electrode layer, the argon plasma treatment step and the etching step are performed under the same conditions, and the passivation layer is formed without forming the second electrode layer again. An adhesive layer was formed and sealed with flat glass. When the number of foreign substances in the organic EL panel thus obtained was observed with a 200-pixel microscope, no foreign substance having a size of 2 μm or more was observed. As a result of applying a voltage of 7 V to the panel, a luminance of 2900 cd / m ² was obtained, and the current efficiency was 5 cd / A. In addition, 11 non-light emitting pixels due to electrode disconnection were observed, and 7 dark spots were observed. Further, 60 ° C. and 90% R.I. H. When the sample was left for 1500 hours, the number of non-light emitting pixels was 11 and no dark spot was observed.

<Comparative Example 1>
The organic EL panel is formed up to the second electrode layer on the TFT substrate in the same manner as in Example 1, and the passivation layer and the adhesive layer are left without the second electrode layer etching step, the argon plasma treatment step, and the argon gas blowing step. Was formed and sealed with flat glass. When the number of foreign matters in the organic electroluminescence panel thus obtained was observed with a 200-pixel microscope, 41 foreign matters with a size of 2 μm or more were observed. As a result of applying a voltage of 7 V to the panel, the luminance was 2600 cd / m ² . The current efficiency was 4 cd / A. A dark spot was observed at 25 pixels and 37 non-light emitting pixels. Further, 60 ° C. and 90% R.I. H. 150 down
When left for 0 hours, the non-light emitting pixels expanded around the foreign matter and the dark spot, and the non-light emitting pixels increased to 121 pixels.

DESCRIPTION OF SYMBOLS 11 ... Substrate 12 ... First electrode layer 13 ... Organic light emitting medium layer
14 ... Second electrode layer 15 ... Passivation layer 16 ... Adhesive layer
17 ... sealing substrate 18 ... desiccant 19 ... partition wall 21 ... substrate 22 ... first electrode layer 23 ... organic light emitting medium layer
24 ... Second electrode layer 25 ... Partition 26 ... Passivation layer
27: Adhesive layer 28: Sealing substrate
31 ... Substrate 32 ... First electrode layer 33 ... Organic light emitting medium layer
34 ... Second electrode layer 35 ... Partition 36 ... Foreign matter
37 ... Second electrode thin layer portion
41 ... substrate 42 ... first electrode layer 43 ... organic light emitting medium layer
44 ... Second electrode layer 45 ... Partition 46 ... Foreign matter
47: Space between foreign substance and second electrode 51 ... Substrate 52 ... First electrode layer 53 ... Organic light emitting medium layer
54 ... Second electrode layer 55 ... Partition 56 ... Foreign matter removal trace 61 ... Substrate 62 ... First electrode layer 63 ... Organic light emitting medium layer
64 ... Second electrode layer 65 ... Second electrode layer formed again 66 ... Partition
67 ... Passivation layer 68 ... Adhesion layer 69 ... Sealing substrate

Claims (7)

At least a substrate, a first electrode layer on the substrate, an organic light emitting medium layer including an organic light emitting layer on the first electrode layer, and the first electrode layer across the organic light emitting medium layer In the manufacturing method of the organic electroluminescence panel in which the second electrode layer and the passivation layer on the second electrode layer are laminated in this order,
A step of dry etching the second electrode layer after the formation of the second electrode layer, and a step of blowing an inert gas onto the surface of the second electrode layer after the dry etching step; And laminating on the second electrode layer. A method for producing an organic electroluminescence panel.   The method of manufacturing an organic electroluminescence panel according to claim 1, wherein the dry etching step is an isotropic dry etching step capable of etching the second electrode layer.   3. The method of manufacturing an organic electroluminescence panel according to claim 1, further comprising a step of forming a second electrode layer again after the inert gas spraying step.   When there is foreign matter under the second electrode layer, the second electrode on the foreign matter is disconnected in the dry etching step, the foreign matter is dropped off in the inert gas blowing step, and the foreign matter is dropped off at the place where the foreign matter is dropped off. The method for producing an organic electroluminescence panel according to claim 1, wherein the two electrode layers are formed again and the second electrode is connected.   2. The organic electroluminescence panel according to claim 1, wherein the passivation layer is formed by chemical vapor deposition (CVD), and covers a concave portion of the second electrode layer formed at a position where foreign matter has fallen off. 3. Method.   5. The organic according to claim 1, wherein fine foreign matter on the surface of the second electrode layer is removed by argon plasma treatment after the dry etching step of the second electrode layer. Manufacturing method of electroluminescence panel.   An organic electroluminescence panel produced by applying the method for producing an organic electroluminescence panel according to any one of claims 1 to 6.