JP2003179040A - 熱処理装置 - Google Patents

熱処理装置

Info

Publication number
JP2003179040A
JP2003179040A JP2001375717A JP2001375717A JP2003179040A JP 2003179040 A JP2003179040 A JP 2003179040A JP 2001375717 A JP2001375717 A JP 2001375717A JP 2001375717 A JP2001375717 A JP 2001375717A JP 2003179040 A JP2003179040 A JP 2003179040A
Authority
JP
Japan
Prior art keywords
plate
heating
rotating
heat treatment
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001375717A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003179040A5 (cg-RX-API-DMAC7.html
Inventor
Yuji Ueda
裕司 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2001375717A priority Critical patent/JP2003179040A/ja
Publication of JP2003179040A publication Critical patent/JP2003179040A/ja
Publication of JP2003179040A5 publication Critical patent/JP2003179040A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2001375717A 2001-12-10 2001-12-10 熱処理装置 Pending JP2003179040A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001375717A JP2003179040A (ja) 2001-12-10 2001-12-10 熱処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001375717A JP2003179040A (ja) 2001-12-10 2001-12-10 熱処理装置

Publications (2)

Publication Number Publication Date
JP2003179040A true JP2003179040A (ja) 2003-06-27
JP2003179040A5 JP2003179040A5 (cg-RX-API-DMAC7.html) 2004-10-28

Family

ID=19184033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001375717A Pending JP2003179040A (ja) 2001-12-10 2001-12-10 熱処理装置

Country Status (1)

Country Link
JP (1) JP2003179040A (cg-RX-API-DMAC7.html)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007507104A (ja) * 2003-09-26 2007-03-22 東京エレクトロン株式会社 連絡空間を用いた効率的な温度制御のための方法と装置
US8007591B2 (en) 2004-01-30 2011-08-30 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
US8092602B2 (en) 2002-11-29 2012-01-10 Tokyo Electron Limited Thermally zoned substrate holder assembly
WO2018069387A1 (de) * 2016-10-11 2018-04-19 Osram Opto Semiconductors Gmbh Heizvorrichtung, verfahren und system zur herstellung von halbleiterchips im waferverbund
KR20190069595A (ko) * 2016-11-09 2019-06-19 티이엘 에프에스아이, 인코포레이티드 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척
US11458512B2 (en) 2017-01-27 2022-10-04 Tel Manufacturing And Engineering Of America, Inc. Systems and methods for rotating and translating a substrate in a process chamber
US11476129B2 (en) 2016-11-29 2022-10-18 Tel Manufacturing And Engineering Of America, Inc. Translating and rotating chuck for processing microelectronic substrates in a process chamber
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
CN117467962A (zh) * 2023-12-28 2024-01-30 上海陛通半导体能源科技股份有限公司 薄膜沉积设备

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092602B2 (en) 2002-11-29 2012-01-10 Tokyo Electron Limited Thermally zoned substrate holder assembly
US8927907B2 (en) 2002-11-29 2015-01-06 Tokyo Electron Limited Thermally zoned substrate holder assembly
JP2007507104A (ja) * 2003-09-26 2007-03-22 東京エレクトロン株式会社 連絡空間を用いた効率的な温度制御のための方法と装置
US8007591B2 (en) 2004-01-30 2011-08-30 Tokyo Electron Limited Substrate holder having a fluid gap and method of fabricating the substrate holder
US11574823B2 (en) 2016-10-11 2023-02-07 Osram Oled Gmbh Heating apparatus, method and system for producing semiconductor chips in the wafer assembly
US11152231B2 (en) 2016-10-11 2021-10-19 Osram Oled Gmbh Heating apparatus, method and system for producing semiconductor chips in the wafer assembly
WO2018069387A1 (de) * 2016-10-11 2018-04-19 Osram Opto Semiconductors Gmbh Heizvorrichtung, verfahren und system zur herstellung von halbleiterchips im waferverbund
JP7297664B2 (ja) 2016-11-09 2023-06-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ,インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
JP2019537261A (ja) * 2016-11-09 2019-12-19 ティーイーエル エフエスアイ,インコーポレイティド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
KR20190069595A (ko) * 2016-11-09 2019-06-19 티이엘 에프에스아이, 인코포레이티드 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척
JP2022168078A (ja) * 2016-11-09 2022-11-04 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ,インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
JP7405921B2 (ja) 2016-11-09 2023-12-26 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ,インコーポレイテッド プロセスチャンバ中でマイクロエレクトロニクス基板を処理するための磁気的な浮上および回転するチャック
KR102518220B1 (ko) * 2016-11-09 2023-04-04 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. 공정 챔버에서 마이크로전자 기판을 처리하기 위한 자기적으로 부상되고 회전되는 척
US11476129B2 (en) 2016-11-29 2022-10-18 Tel Manufacturing And Engineering Of America, Inc. Translating and rotating chuck for processing microelectronic substrates in a process chamber
US11458512B2 (en) 2017-01-27 2022-10-04 Tel Manufacturing And Engineering Of America, Inc. Systems and methods for rotating and translating a substrate in a process chamber
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
CN117467962A (zh) * 2023-12-28 2024-01-30 上海陛通半导体能源科技股份有限公司 薄膜沉积设备
CN117467962B (zh) * 2023-12-28 2024-03-08 上海陛通半导体能源科技股份有限公司 薄膜沉积设备

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