JP2003178573A5 - - Google Patents

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Publication number
JP2003178573A5
JP2003178573A5 JP2001378820A JP2001378820A JP2003178573A5 JP 2003178573 A5 JP2003178573 A5 JP 2003178573A5 JP 2001378820 A JP2001378820 A JP 2001378820A JP 2001378820 A JP2001378820 A JP 2001378820A JP 2003178573 A5 JP2003178573 A5 JP 2003178573A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001378820A
Other versions
JP4052829B2 (ja
JP2003178573A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001378820A external-priority patent/JP4052829B2/ja
Priority to JP2001378820A priority Critical patent/JP4052829B2/ja
Priority to US10/164,548 priority patent/US6597601B2/en
Priority to TW091121115A priority patent/TW569214B/zh
Priority to KR1020020058422A priority patent/KR100572744B1/ko
Priority to DE10244969A priority patent/DE10244969A1/de
Priority to CNB021424004A priority patent/CN1266704C/zh
Publication of JP2003178573A publication Critical patent/JP2003178573A/ja
Publication of JP2003178573A5 publication Critical patent/JP2003178573A5/ja
Publication of JP4052829B2 publication Critical patent/JP4052829B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001378820A 2001-12-12 2001-12-12 薄膜磁性体記憶装置 Expired - Fee Related JP4052829B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001378820A JP4052829B2 (ja) 2001-12-12 2001-12-12 薄膜磁性体記憶装置
US10/164,548 US6597601B2 (en) 2001-12-12 2002-06-10 Thin film magnetic memory device conducting data read operation without using a reference cell
TW091121115A TW569214B (en) 2001-12-12 2002-09-16 Thin film magnetic memory device conducting data read operation without using a reference cell
DE10244969A DE10244969A1 (de) 2001-12-12 2002-09-26 Magnetische Dünnfilmspeichervorrichtung zum Durchführen eines Datenlesevorgangs ohne Verwendung einer Referenzzelle
KR1020020058422A KR100572744B1 (ko) 2001-12-12 2002-09-26 레퍼런스셀 없이 데이터 판독을 실행하는 박막 자성체기억장치
CNB021424004A CN1266704C (zh) 2001-12-12 2002-09-27 不用基准单元进行数据读出的薄膜磁性体存储器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001378820A JP4052829B2 (ja) 2001-12-12 2001-12-12 薄膜磁性体記憶装置

Publications (3)

Publication Number Publication Date
JP2003178573A JP2003178573A (ja) 2003-06-27
JP2003178573A5 true JP2003178573A5 (ja) 2005-07-07
JP4052829B2 JP4052829B2 (ja) 2008-02-27

Family

ID=19186432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001378820A Expired - Fee Related JP4052829B2 (ja) 2001-12-12 2001-12-12 薄膜磁性体記憶装置

Country Status (6)

Country Link
US (1) US6597601B2 (ja)
JP (1) JP4052829B2 (ja)
KR (1) KR100572744B1 (ja)
CN (1) CN1266704C (ja)
DE (1) DE10244969A1 (ja)
TW (1) TW569214B (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646911B2 (en) * 2001-10-26 2003-11-11 Mitsubishi Denki Kabushiki Kaisha Thin film magnetic memory device having data read current tuning function
US6795336B2 (en) * 2001-12-07 2004-09-21 Hynix Semiconductor Inc. Magnetic random access memory
JP4278325B2 (ja) * 2001-12-19 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
JP4208498B2 (ja) * 2002-06-21 2009-01-14 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP4266297B2 (ja) * 2002-09-05 2009-05-20 株式会社ルネサステクノロジ 不揮発性記憶装置
US6700814B1 (en) * 2002-10-30 2004-03-02 Motorola, Inc. Sense amplifier bias circuit for a memory having at least two distinct resistance states
JP2004164766A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 不揮発性記憶装置
US6982909B2 (en) * 2003-07-07 2006-01-03 Hewlett-Packard Development Company, L.P. System and method for reading a memory cell
JP3935150B2 (ja) 2004-01-20 2007-06-20 株式会社東芝 磁気ランダムアクセスメモリ
JP4063239B2 (ja) 2004-04-16 2008-03-19 ソニー株式会社 データ読出し回路及びこの回路を有する半導体装置
US7079415B2 (en) * 2004-06-30 2006-07-18 Stmicroelectronics, Inc. Magnetic random access memory element
US7480172B2 (en) * 2006-01-25 2009-01-20 Magic Technologies, Inc. Programming scheme for segmented word line MRAM array
US7881138B2 (en) * 2006-07-10 2011-02-01 Freescale Semiconductor, Inc. Memory circuit with sense amplifier
CN100586457C (zh) * 2006-12-25 2010-02-03 李明亮 一种治疗四肢关节痛、骨质增生的中药胶囊
US7453740B2 (en) * 2007-01-19 2008-11-18 International Business Machines Corporation Method and apparatus for initializing reference cells of a toggle switched MRAM device
JP2009230798A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 磁気記憶装置
JP2010027202A (ja) * 2009-10-30 2010-02-04 Renesas Technology Corp 磁性体記憶装置
JP5603895B2 (ja) 2012-03-21 2014-10-08 株式会社東芝 半導体記憶装置の駆動方法および半導体記憶装置
US9064590B2 (en) 2012-03-02 2015-06-23 Kabushiki Kaisha Toshiba Driving method of semiconductor storage device and semiconductor storage device
KR101666537B1 (ko) * 2012-05-18 2016-10-14 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 기억 회로
US9728251B2 (en) 2013-04-24 2017-08-08 Micron Technology, Inc. Resistance variable memory sensing using programming signals
CN103559904A (zh) * 2013-11-05 2014-02-05 苏州贝克微电子有限公司 一种单端数据感测的读出放大器
CN108630266B (zh) * 2017-03-24 2022-10-11 铠侠股份有限公司 存储设备及其控制方法
JP2019057348A (ja) * 2017-09-21 2019-04-11 東芝メモリ株式会社 メモリデバイス
CN110971217B (zh) * 2019-11-12 2023-08-29 杭州电子科技大学 一种基于mtj的非易失可编程开关

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19947118C1 (de) * 1999-09-30 2001-03-15 Infineon Technologies Ag Verfahren und Schaltungsanordnung zum Bewerten des Informationsgehalts einer Speicherzelle
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6317376B1 (en) 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
DE10043440C2 (de) * 2000-09-04 2002-08-29 Infineon Technologies Ag Magnetoresistiver Speicher und Verfahren zu seinem Auslesen
JP2002170937A (ja) * 2000-11-30 2002-06-14 Canon Inc 半導体記憶装置及びその駆動方法
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ

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