JP2003178573A5 - - Google Patents
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- Publication number
- JP2003178573A5 JP2003178573A5 JP2001378820A JP2001378820A JP2003178573A5 JP 2003178573 A5 JP2003178573 A5 JP 2003178573A5 JP 2001378820 A JP2001378820 A JP 2001378820A JP 2001378820 A JP2001378820 A JP 2001378820A JP 2003178573 A5 JP2003178573 A5 JP 2003178573A5
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001378820A JP4052829B2 (ja) | 2001-12-12 | 2001-12-12 | 薄膜磁性体記憶装置 |
US10/164,548 US6597601B2 (en) | 2001-12-12 | 2002-06-10 | Thin film magnetic memory device conducting data read operation without using a reference cell |
TW091121115A TW569214B (en) | 2001-12-12 | 2002-09-16 | Thin film magnetic memory device conducting data read operation without using a reference cell |
DE10244969A DE10244969A1 (de) | 2001-12-12 | 2002-09-26 | Magnetische Dünnfilmspeichervorrichtung zum Durchführen eines Datenlesevorgangs ohne Verwendung einer Referenzzelle |
KR1020020058422A KR100572744B1 (ko) | 2001-12-12 | 2002-09-26 | 레퍼런스셀 없이 데이터 판독을 실행하는 박막 자성체기억장치 |
CNB021424004A CN1266704C (zh) | 2001-12-12 | 2002-09-27 | 不用基准单元进行数据读出的薄膜磁性体存储器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001378820A JP4052829B2 (ja) | 2001-12-12 | 2001-12-12 | 薄膜磁性体記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003178573A JP2003178573A (ja) | 2003-06-27 |
JP2003178573A5 true JP2003178573A5 (ja) | 2005-07-07 |
JP4052829B2 JP4052829B2 (ja) | 2008-02-27 |
Family
ID=19186432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001378820A Expired - Fee Related JP4052829B2 (ja) | 2001-12-12 | 2001-12-12 | 薄膜磁性体記憶装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6597601B2 (ja) |
JP (1) | JP4052829B2 (ja) |
KR (1) | KR100572744B1 (ja) |
CN (1) | CN1266704C (ja) |
DE (1) | DE10244969A1 (ja) |
TW (1) | TW569214B (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6646911B2 (en) * | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
US6795336B2 (en) * | 2001-12-07 | 2004-09-21 | Hynix Semiconductor Inc. | Magnetic random access memory |
JP4278325B2 (ja) * | 2001-12-19 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP4208498B2 (ja) * | 2002-06-21 | 2009-01-14 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
JP4266297B2 (ja) * | 2002-09-05 | 2009-05-20 | 株式会社ルネサステクノロジ | 不揮発性記憶装置 |
US6700814B1 (en) * | 2002-10-30 | 2004-03-02 | Motorola, Inc. | Sense amplifier bias circuit for a memory having at least two distinct resistance states |
JP2004164766A (ja) * | 2002-11-14 | 2004-06-10 | Renesas Technology Corp | 不揮発性記憶装置 |
US6982909B2 (en) * | 2003-07-07 | 2006-01-03 | Hewlett-Packard Development Company, L.P. | System and method for reading a memory cell |
JP3935150B2 (ja) | 2004-01-20 | 2007-06-20 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP4063239B2 (ja) | 2004-04-16 | 2008-03-19 | ソニー株式会社 | データ読出し回路及びこの回路を有する半導体装置 |
US7079415B2 (en) * | 2004-06-30 | 2006-07-18 | Stmicroelectronics, Inc. | Magnetic random access memory element |
US7480172B2 (en) * | 2006-01-25 | 2009-01-20 | Magic Technologies, Inc. | Programming scheme for segmented word line MRAM array |
US7881138B2 (en) * | 2006-07-10 | 2011-02-01 | Freescale Semiconductor, Inc. | Memory circuit with sense amplifier |
CN100586457C (zh) * | 2006-12-25 | 2010-02-03 | 李明亮 | 一种治疗四肢关节痛、骨质增生的中药胶囊 |
US7453740B2 (en) * | 2007-01-19 | 2008-11-18 | International Business Machines Corporation | Method and apparatus for initializing reference cells of a toggle switched MRAM device |
JP2009230798A (ja) * | 2008-03-21 | 2009-10-08 | Toshiba Corp | 磁気記憶装置 |
JP2010027202A (ja) * | 2009-10-30 | 2010-02-04 | Renesas Technology Corp | 磁性体記憶装置 |
JP5603895B2 (ja) | 2012-03-21 | 2014-10-08 | 株式会社東芝 | 半導体記憶装置の駆動方法および半導体記憶装置 |
US9064590B2 (en) | 2012-03-02 | 2015-06-23 | Kabushiki Kaisha Toshiba | Driving method of semiconductor storage device and semiconductor storage device |
KR101666537B1 (ko) * | 2012-05-18 | 2016-10-14 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | 기억 회로 |
US9728251B2 (en) | 2013-04-24 | 2017-08-08 | Micron Technology, Inc. | Resistance variable memory sensing using programming signals |
CN103559904A (zh) * | 2013-11-05 | 2014-02-05 | 苏州贝克微电子有限公司 | 一种单端数据感测的读出放大器 |
CN108630266B (zh) * | 2017-03-24 | 2022-10-11 | 铠侠股份有限公司 | 存储设备及其控制方法 |
JP2019057348A (ja) * | 2017-09-21 | 2019-04-11 | 東芝メモリ株式会社 | メモリデバイス |
CN110971217B (zh) * | 2019-11-12 | 2023-08-29 | 杭州电子科技大学 | 一种基于mtj的非易失可编程开关 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19947118C1 (de) * | 1999-09-30 | 2001-03-15 | Infineon Technologies Ag | Verfahren und Schaltungsanordnung zum Bewerten des Informationsgehalts einer Speicherzelle |
US6185143B1 (en) | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
US6317376B1 (en) | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
DE10043440C2 (de) * | 2000-09-04 | 2002-08-29 | Infineon Technologies Ag | Magnetoresistiver Speicher und Verfahren zu seinem Auslesen |
JP2002170937A (ja) * | 2000-11-30 | 2002-06-14 | Canon Inc | 半導体記憶装置及びその駆動方法 |
JP2003151262A (ja) * | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
-
2001
- 2001-12-12 JP JP2001378820A patent/JP4052829B2/ja not_active Expired - Fee Related
-
2002
- 2002-06-10 US US10/164,548 patent/US6597601B2/en not_active Expired - Lifetime
- 2002-09-16 TW TW091121115A patent/TW569214B/zh not_active IP Right Cessation
- 2002-09-26 KR KR1020020058422A patent/KR100572744B1/ko not_active IP Right Cessation
- 2002-09-26 DE DE10244969A patent/DE10244969A1/de not_active Ceased
- 2002-09-27 CN CNB021424004A patent/CN1266704C/zh not_active Expired - Fee Related