JP2003168803A5 - - Google Patents

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Publication number
JP2003168803A5
JP2003168803A5 JP2001368010A JP2001368010A JP2003168803A5 JP 2003168803 A5 JP2003168803 A5 JP 2003168803A5 JP 2001368010 A JP2001368010 A JP 2001368010A JP 2001368010 A JP2001368010 A JP 2001368010A JP 2003168803 A5 JP2003168803 A5 JP 2003168803A5
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JP
Japan
Prior art keywords
electrode
thin film
film
semiconductor
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001368010A
Other languages
English (en)
Japanese (ja)
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JP2003168803A (ja
JP4201239B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2001368010A priority Critical patent/JP4201239B2/ja
Priority claimed from JP2001368010A external-priority patent/JP4201239B2/ja
Publication of JP2003168803A publication Critical patent/JP2003168803A/ja
Publication of JP2003168803A5 publication Critical patent/JP2003168803A5/ja
Application granted granted Critical
Publication of JP4201239B2 publication Critical patent/JP4201239B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001368010A 2001-11-30 2001-11-30 半導体装置 Expired - Fee Related JP4201239B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001368010A JP4201239B2 (ja) 2001-11-30 2001-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001368010A JP4201239B2 (ja) 2001-11-30 2001-11-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2003168803A JP2003168803A (ja) 2003-06-13
JP2003168803A5 true JP2003168803A5 (enExample) 2005-07-07
JP4201239B2 JP4201239B2 (ja) 2008-12-24

Family

ID=19177665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001368010A Expired - Fee Related JP4201239B2 (ja) 2001-11-30 2001-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JP4201239B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100666552B1 (ko) 2004-06-30 2007-01-09 삼성에스디아이 주식회사 반도체 소자의 제조 방법 및 이 방법에 의하여 제조되는반도체 소자
KR100666563B1 (ko) 2004-07-05 2007-01-09 삼성에스디아이 주식회사 반도체 장치의 제조 방법 및 이 방법에 의하여 제조되는반도체 장치
JP5054919B2 (ja) * 2005-12-20 2012-10-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置
FR2932005B1 (fr) * 2008-06-02 2011-04-01 Commissariat Energie Atomique Circuit a transistor integres dans trois dimensions et ayant une tension de seuil vt ajustable dynamiquement
US20180061763A1 (en) * 2016-08-24 2018-03-01 Qualcomm Switch Corp. Device performance improvement using backside metallization in a layer transfer process

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