JP2003163415A5 - - Google Patents

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Publication number
JP2003163415A5
JP2003163415A5 JP2002354976A JP2002354976A JP2003163415A5 JP 2003163415 A5 JP2003163415 A5 JP 2003163415A5 JP 2002354976 A JP2002354976 A JP 2002354976A JP 2002354976 A JP2002354976 A JP 2002354976A JP 2003163415 A5 JP2003163415 A5 JP 2003163415A5
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JP
Japan
Prior art keywords
cladding layer
side cladding
nitride semiconductor
layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002354976A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003163415A (ja
JP3891108B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002354976A priority Critical patent/JP3891108B2/ja
Priority claimed from JP2002354976A external-priority patent/JP3891108B2/ja
Publication of JP2003163415A publication Critical patent/JP2003163415A/ja
Publication of JP2003163415A5 publication Critical patent/JP2003163415A5/ja
Application granted granted Critical
Publication of JP3891108B2 publication Critical patent/JP3891108B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002354976A 2002-12-06 2002-12-06 窒化物半導体発光素子 Expired - Fee Related JP3891108B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002354976A JP3891108B2 (ja) 2002-12-06 2002-12-06 窒化物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002354976A JP3891108B2 (ja) 2002-12-06 2002-12-06 窒化物半導体発光素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP35254097A Division JP3647236B2 (ja) 1997-12-22 1997-12-22 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2003163415A JP2003163415A (ja) 2003-06-06
JP2003163415A5 true JP2003163415A5 (https=) 2005-06-30
JP3891108B2 JP3891108B2 (ja) 2007-03-14

Family

ID=19197914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002354976A Expired - Fee Related JP3891108B2 (ja) 2002-12-06 2002-12-06 窒化物半導体発光素子

Country Status (1)

Country Link
JP (1) JP3891108B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305635A (ja) * 2006-05-09 2007-11-22 Sharp Corp 窒化物半導体発光素子
JP2011082245A (ja) * 2009-10-05 2011-04-21 Qd Laser Inc 光半導体装置及びそれを用いた光モジュール
DE102011100175B4 (de) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102015119226A1 (de) * 2015-11-09 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

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