JP2002261393A5 - - Google Patents

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Publication number
JP2002261393A5
JP2002261393A5 JP2001402089A JP2001402089A JP2002261393A5 JP 2002261393 A5 JP2002261393 A5 JP 2002261393A5 JP 2001402089 A JP2001402089 A JP 2001402089A JP 2001402089 A JP2001402089 A JP 2001402089A JP 2002261393 A5 JP2002261393 A5 JP 2002261393A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
laser device
semiconductor laser
type cladding
Prior art date
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Granted
Application number
JP2001402089A
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English (en)
Japanese (ja)
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JP4342134B2 (ja
JP2002261393A (ja
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Publication date
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Priority to JP2001402089A priority Critical patent/JP4342134B2/ja
Priority claimed from JP2001402089A external-priority patent/JP4342134B2/ja
Publication of JP2002261393A publication Critical patent/JP2002261393A/ja
Publication of JP2002261393A5 publication Critical patent/JP2002261393A5/ja
Application granted granted Critical
Publication of JP4342134B2 publication Critical patent/JP4342134B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001402089A 2000-12-28 2001-12-28 窒化物半導体レーザ素子 Expired - Fee Related JP4342134B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001402089A JP4342134B2 (ja) 2000-12-28 2001-12-28 窒化物半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000402772 2000-12-28
JP2000-402772 2000-12-28
JP2001402089A JP4342134B2 (ja) 2000-12-28 2001-12-28 窒化物半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007293685A Division JP4441563B2 (ja) 2000-12-28 2007-11-12 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2002261393A JP2002261393A (ja) 2002-09-13
JP2002261393A5 true JP2002261393A5 (https=) 2005-08-04
JP4342134B2 JP4342134B2 (ja) 2009-10-14

Family

ID=26607198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001402089A Expired - Fee Related JP4342134B2 (ja) 2000-12-28 2001-12-28 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP4342134B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005020396A1 (ja) * 2003-08-26 2006-10-19 ソニー株式会社 ＧａＮ系ＩＩＩ−Ｖ族化合物半導体発光素子及びその製造方法
JP2010135724A (ja) * 2008-10-27 2010-06-17 Mitsubishi Electric Corp 半導体レーザ装置
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
US9124071B2 (en) 2012-11-27 2015-09-01 Nichia Corporation Nitride semiconductor laser element
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6225945B2 (ja) 2015-05-26 2017-11-08 日亜化学工業株式会社 半導体レーザ素子
JP6932345B2 (ja) * 2017-03-27 2021-09-08 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子
JP6536649B2 (ja) * 2017-10-10 2019-07-03 日亜化学工業株式会社 半導体レーザ素子
JP2023031164A (ja) * 2021-08-24 2023-03-08 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子

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